Solid state power amplifier and communication device

Abstract

The embodiment of the utility model discloses a solid-state power amplifier and communication equipment. A solid-state power amplification bare tube core is sintered on a metal heat conduction base, and a bias circuit device corresponding to the solid-state power amplification bare tube core is directly installed on a main circuit board and is connected with a corresponding electric connection point through a gold wire. The metal heat conduction base, the main circuit board and the metal shielding cover which are installed in a stacked mode form a containing space with a good shielding effect due to good conductive contact, the solid-state power amplification bare tube core and a bias circuit device on the main circuit board are arranged in the containing space to avoid interference, a packaging installation mode is omitted, and the small modular design of the product is achieved. A small-sized non-standard microstrip-to-waveguide formed by enclosing the metal heat-conducting base, the main circuit board and the metal shielding cover effectively controls the loss of the solid-state power amplification bare tube core, especially the high-frequency and high-power solid-state power amplification bare tube core in a signal transmission process and rapidly dissipates heat; and the performance of the solid-state power amplification bare tube core is fully exerted while the size is controlled.

Description

Technical Field

[0001] The embodiments of the present application relate to the field of electronic technology, and in particular to solid-state power amplifiers and communication equipment. Background Art

[0002] With the rapid development of solid-state power amplifiers, the technology and energy density of many high-frequency or high-wattage power amplifiers have been qualitatively improved, and the bare tube cores are getting smaller and smaller.

[0003] When the inventor studied products that traditionally used bare tube cores, he found that the product size obtained by packaging the bare tube core was large, and the various connections of the packaged bare tube core were complex when applied to specific products. The product form at each level required a larger physical form and complex connection relationships. Utility Model Content

[0004] The embodiments of the present utility model provide a solid-state power amplifier and a communication device to solve the technical problems that the product size obtained by the existing packaged bare tube core is large, the various connections are complicated when the packaged bare tube core is used in a specific product, and the product form at each level requires a large physical form and complex connection relationship.

[0005] In a first aspect, an embodiment of the present application provides a solid-state power amplifier, which includes a metal heat-conducting base, a main circuit board, a metal shielding cover, a solid-state power amplifier bare die, and fastening screws;

[0006] The metal heat-conducting base is provided with a first input window, a first output window, a first set of mounting holes, and a connection port; the main circuit board is provided with a first device window and a second set of mounting holes; the metal shielding cover is provided with a first input slot, a first output slot, a device accommodating cavity, and a third set of mounting holes; fastening screws are passed through the first set of mounting holes, the second set of mounting holes, and the third set of mounting holes to secure the stacked metal heat-conducting base, the main circuit board, and the metal shielding cover;

[0007] The solid-state power amplifier bare tube core is sintered on a metal heat-conducting base and is located at the first device window;

[0008] The main circuit board is provided with bias circuit devices, input and output microstrip lines and external power supply terminals; the solid-state power amplifier bare tube core, bias circuit devices and input and output microstrip lines are all connected to the corresponding electrical connection points through gold wires; the two ends of the input and output microstrip lines serve as the input signal end and the output signal end respectively, and the two sides of the input signal end face the first input window and the first input slot respectively, so as to be placed in the input microstrip to waveguide transmission structure formed by the first input window and the first input slot; the two sides of the output signal end face the first output window and the first output slot respectively, so as to be placed in the output microstrip to waveguide transmission structure formed by the first output window and the first output slot; the transmission structure of the input microstrip to waveguide and the transmission structure of the output microstrip to waveguide are both small non-standard size structures; the bias circuit device is embedded in the device accommodating cavity, and the external power supply terminal is exposed through the connection port.

[0009] In the above, by sintering the solid-state power amplifier bare tube core to the metal thermal conductive base, the bias circuit components corresponding to the solid-state power amplifier bare tube core are directly installed on the main circuit board, and connected to the corresponding electrical connection points through gold wires, the stacked metal thermal conductive base, the main circuit board and the metal shielding cover form a accommodating space with good shielding effect due to good conductive contact. The bias circuit components on the solid-state power amplifier bare tube core and the main circuit board are placed in the accommodating space to avoid interference, and the package-free installation method realizes the small modular design of the product; the small non-standard microstrip waveguide formed by the metal thermal conductive base, the main circuit board and the metal shielding cover effectively controls the loss of the solid-state power amplifier bare tube core, especially the high-frequency and high-power solid-state power amplifier bare tube core during signal transmission and quickly dissipates heat, thereby fully exerting the performance of the solid-state power amplifier bare tube core while controlling the size.

[0010] The external power supply terminals are divided into two groups, and the number of connection ports is two. The two groups of external power supply terminals are exposed through one connection port respectively.

[0011] As described above, the external power supply terminal is exposed through the connection port opened by the metal heat-conducting base, which can eliminate external interference as much as possible.

[0012] The external power supply terminal is a contact or a metal spring.

[0013] As described above, through the contacts or metal springs, a stable connection with external devices can be achieved without increasing external interference.

[0014] The external power supply terminal is arranged at the top or bottom of the solid-state power amplifier.

[0015] As mentioned above, the external power supply terminal is arranged at the top or bottom of the solid-state power amplifier, and can be flexibly selected according to the overall design when used.

[0016] The metal shrapnel is connected to the main circuit board through patch welding.

[0017] As mentioned above, the metal shrapnel soldered to the main circuit board through the patch ensures a firm connection and stable signal transmission.

[0018] The bias circuit device includes a multi-stage power supply filter capacitor at the gate and drain.

[0019] As described above, the multi-stage power supply filter capacitors at the gate and drain can effectively suppress stray signals of various frequencies during signal transmission.

[0020] Among them, the power filter capacitors of the gate and drain are both powered by multiple channels.

[0021] As described above, power supply redundancy is achieved through multi-channel power supply, which ensures power supply in various states and maintains the reliability of power supply connection.

[0022] In a second aspect, an embodiment of the present application provides a communication device, which includes any solid-state power amplifier of the first aspect.

[0023] As described above, the communication device includes any solid-state power amplifier in the first aspect, and has corresponding beneficial effects. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 A perspective structural diagram of a solid-state power amplifier provided in an embodiment of the present application.

[0025] Figure 2 This is a bottom-view overall structural diagram of the solid-state power amplifier provided in an embodiment of the present application.

[0026] Figure 3 This is a top-view diagram of the overall structure of the solid-state power amplifier provided in an embodiment of the present application.

[0027] Figure 4 This is a diagram of the internal structure of the solid-state power amplifier provided in an embodiment of the present application.

[0028] Figure 5 This is a front view of the solid-state power amplifier provided in an embodiment of the present application.

[0029] Figure 6 A side view of a solid-state power amplifier provided in an embodiment of the present application.

[0030] Figure 7 A bottom view of the solid-state power amplifier provided in an embodiment of the present application.

[0031] Figure 8 for Figure 7 Cross-section of the BB.

[0032] Figure 9 An exploded diagram of a solid-state power amplifier provided in an embodiment of the present application.

[0033] Figure 10 This is a schematic diagram of the planar structure of the input signal end of the input and output microstrip lines provided in an embodiment of the present application.

[0034] Figure 11 This is a schematic diagram of the planar structure of the output signal end of the input and output microstrip line provided in an embodiment of the present application.

[0035] Figure 12 This is a diagram of signal simulation results of the input signal end of the input and output microstrip lines provided in an embodiment of the present application.

[0036] Figure 13 This is a diagram of signal simulation results of the output signal end of the input and output microstrip lines provided in an embodiment of the present application.

[0037] Figure 14 This is a circuit diagram of the power supply filter capacitor provided in an embodiment of the present application.

[0038] Among them: 10-metal shielding cover; 20-main circuit board; 21-first device window; input signal terminal-22; 23-output signal terminal; 30-metal thermal conductive base; 31-solid-state power amplifier bare tube core; 32-first input window; 33-first output window; 40-external power supply terminal. DETAILED DESCRIPTION

[0039] The present invention will be further described in detail below with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described herein are intended to explain the present invention, not to limit it. It should also be noted that, for ease of description, the accompanying drawings only illustrate portions relevant to the present invention, not all of its components.

[0040] It should be noted that due to space limitations, this application specification does not enumerate all optional implementation methods. After reading this application specification, those skilled in the art should be able to understand that as long as the technical features do not contradict each other, any combination of technical features can constitute an optional implementation method.

[0041] The following describes in detail the various embodiments of the present invention.

[0042] With the rapid development of solid-state power amplifiers, the process technology and energy density of many high-frequency or high-wattage power amplifiers have significantly improved, and the bare die has become increasingly smaller. However, these devices are also limited by the packaging, heat dissipation, and transmission loss. In practical applications, these devices often result in large, complex connections, and low efficiency, hindering the promotion of advanced technologies. First, for signal connections, traditional power amplifier devices use coaxial or standard waveguides designed for the main mode frequency, which are very large and difficult to promote. Coaxial or non-cavity connections also have high losses and low transmission efficiency. Second, for power connections, traditional wire bonding methods are often used, which requires many wires and is complex, making installation and use inconvenient. Third, as the power and frequency increase, the efficiency of the power amplifier decreases to varying degrees after packaging with traditional and currently advanced packaging materials, which also affects the device lifespan. Overall, traditional bare die packaging products are large in size. When the encapsulated bare die is used in a specific product, various connections are complex, requiring a large physical form factor and complex connections at all levels.

[0043] In response to the above technical problems, the embodiments of the present application propose a solid-state power amplifier and a communication device. By sintering the solid-state power amplifier bare tube core to a metal heat-conducting base, the bias circuit device corresponding to the solid-state power amplifier bare tube core is directly installed on the main circuit board and connected to the corresponding electrical connection point through gold wire. The stacked metal heat-conducting base, the main circuit board and the metal shielding cover form a housing space with good shielding effect due to good conductive contact. The solid-state power amplifier bare tube core and the bias circuit devices on the main circuit board are placed in the housing space to avoid interference. The package-free installation method realizes a small modular design of the product. The small non-standard microstrip waveguide formed by the metal heat-conducting base, the main circuit board and the metal shielding cover effectively controls the loss of the solid-state power amplifier bare tube core, especially the high-frequency, high-power solid-state power amplifier bare tube core during signal transmission and quickly dissipates heat, thereby fully exerting the performance of the solid-state power amplifier bare tube core while controlling the size.

[0044] Please refer to Figures 1-9 , which are respectively a perspective structure diagram of the solid-state power amplifier provided by an embodiment of the present application, an overall structure diagram from a bottom perspective, an overall structure diagram from a top perspective, an internal structure diagram, a front view, a side view, a bottom view, Figure 7 As shown in the figure, the solid-state power amplifier includes a metal heat-conducting base 30, a main circuit board 20, a metal shielding cover 10 and fastening screws; the metal heat-conducting base 30 is provided with a first input window 32, a first output window 33, a first group of mounting holes (i.e. Figure 1 The four corners of the circular hole) and the connection port (i.e. Figure 1 The main circuit board 20 is provided with a first device window 21 and a second set of mounting holes (ie Figure 4The metal shielding cover 10 is provided with a first input slot, a first output slot, a device accommodating cavity and a third set of mounting holes; fastening screws are fixed to the stacked metal heat-conducting base 30, the main circuit board 20 and the metal shielding cover 10 through the first set of mounting holes, the second set of mounting holes and the third set of mounting holes; the solid-state power amplifier bare tube core 31 is sintered on the metal heat-conducting base 30 and is located in the first device window 21 (i.e. Figure 4 The solid-state power amplifier bare tube core 31 is located in the first device window 21); the main circuit board 20 is provided with bias circuit components, input and output microstrip lines ( Figure 4 As shown by two T-shaped graphics, the narrower end is the input signal terminal 22, the wider end is the output signal terminal 23) and the external power supply terminal 40; the solid-state power amplifier bare tube core 31, the bias circuit device and the input and output microstrip lines are all connected to the corresponding electrical connection points through gold wires, wherein the connection points on the solid-state power amplifier bare tube core 31 are usually called pressure points, which are also functionally used to achieve electrical connection; the two ends of the input and output microstrip lines serve as the input signal terminal 22 and the output signal terminal 23 respectively, and the two ends of the input signal terminal 22 are connected to the corresponding electrical connection points. The two sides of the output signal end 23 face the first input window 32 and the first input slot respectively, so as to be placed in the input microstrip-to-waveguide transmission structure formed by the first input window 32 and the first input slot; the two sides of the output signal end 23 face the first output window 33 and the first output slot respectively, so as to be placed in the output microstrip-to-waveguide transmission structure formed by the first output window 33 and the first output slot; the input microstrip-to-waveguide transmission structure and the output microstrip-to-waveguide transmission structure are both small non-standard size waveguides; the bias circuit device is embedded in the device accommodating cavity, and the external power supply terminal is exposed through the connection port.

[0045] In the embodiment of the present application, the components (bias circuit components and input / output microstrip lines) on the main circuit board 20 are used in conjunction with the solid-state power amplifier bare die 31 to realize the device electronic functions of the solid-state power amplifier. The metal heat-conducting base 30 and the metal shielding cover 10 are used to form a cavity that encloses the components and the solid-state power amplifier bare die 31 disposed on the main circuit board 20, so as to shield the components and circuits on the main circuit board 20, as well as the solid-state power amplifier bare die 31, from interference that may be caused during operation. It should be understood that in the embodiment of the present application, the input signal terminal 22 and the output signal terminal 23 of the input / output microstrip line are disposed on the main circuit board 20. Specifically, a high-frequency plate is used as the main body of the main circuit board 20. The high-frequency plate is originally covered with a copper layer. The copper layer is etched to form the input signal terminal 22 and the output signal terminal 23 disposed on the high-frequency plate, and finally arranged on the main circuit board 20 in the general arrangement of the input / output microstrip line.

[0046] The first input slot and the first output slot provided in the metal shielding cover 10 correspond to two radial cavities for input and output. The device accommodating slot serves as the upper cavity for placing bias circuit devices. When the two sides of the input signal terminal 22 face the first input window 32 and the first input slot respectively, it is equivalent to the input signal terminal 22 being located in the waveguide cavity surrounded by the first input window 32 and the first output slot. Similarly, when the two sides of the output signal terminal 23 face the first output window 33 and the first output slot respectively, it is equivalent to the output signal terminal 23 being located in the waveguide cavity surrounded by the first output window 33 and the first output slot.

[0047] The solid-state power amplifier bare tube core 31, for example, a Ku-band 20W solid-state gallium nitride power amplifier bare tube core, has a length and width of 2.8mm and 3.3mm, respectively. It is directly sintered on a high-thermal-conductivity metal thermal conductive base 30 by gold soldering. The metal thermal conductive base 30 is not limited to a copper metal carrier, but can also be other high-thermal-conductivity materials with a linear expansion coefficient close to that of the solid-state power amplifier bare tube core 31. The metal thermal conductive base 30 can be integrally formed (for example, by die-casting, casting, etc.) with a boss, which is used to sinter the solid-state power amplifier bare tube core 31. The top surface of the boss is slightly smaller than the first device window 21 to ensure smooth installation even if there are processing errors. After the solid-state power amplifier bare die 31 is sintered on the boss, when the metal heat-conducting base 30 is assembled with the main circuit board 20, the boss and the solid-state power amplifier bare die 31 can be smoothly installed because the top surface of the boss is smaller than the first device window 21. After installation, the boss is located in the space formed by the first device window 21, and a certain gap is maintained between the four sides of the boss and the inner sidewall of the first device window 21. After installation, the top surface of the solid-state power amplifier bare die 31 is generally flush with the side of the main circuit board 30 facing the metal shielding cover 10, which helps improve the processing quality of subsequent processing steps (such as SMT) and reduces interference between the solid-state power amplifier bare die 31 and the main circuit board 30.

[0048] The screws used for fixing can include one M2 pre-locking screw and four M2.5 fastening screws to complete the device fastening installation. The installation operation is convenient and suitable for fully automated production. When the product is debugged, only the fastening screws need to be removed to complete the device disassembly, which greatly facilitates the production and debugging of the product.

[0049] In practice, to achieve low high-frequency transmission loss, the main circuit board 20 can utilize, but is not limited to, the SG7000 series high-frequency board material. Other low-loss boards can also be used to achieve low insertion loss, enabling low-insertion-loss transmission when used for high-frequency signals. The main circuit board 20 has exemplary dimensions of 33mm long and 22mm long, respectively. The core board is 0.254mm thick, the single-layer microstrip copper is 0.035mm thick, and the surface is treated with a nickel-immersion gold process.

[0050] In addition to input and output microstrip lines, microstrip probes, and gate and drain-related components, the main circuit board 20 is mounted on the main circuit board 20 via surface mount soldering. This allows for partial connections via the existing printed circuit board on the main circuit board 20, while other necessary electrical connections are made via gold wire. Gold wire refers to metal wires connected via a bonding process. For example, the bonding process connects the signal pins on the bare die 31 of a solid-state power amplifier to other components mounted on the main circuit board 20, such as the input and output microstrip lines, to facilitate input and output signals.

[0051] In general, by sintering the solid-state power amplifier bare tube core to the metal thermal conductive base, the bias circuit components corresponding to the solid-state power amplifier bare tube core are directly installed on the main circuit board, and connected to the corresponding electrical connection points through gold wires, the stacked metal thermal conductive base, main circuit board and metal shielding cover form a accommodating space with good shielding effect due to good conductive contact. The bias circuit components on the solid-state power amplifier bare tube core and the main circuit board are placed in the accommodating space to avoid interference, and the package-free installation method realizes the small modular design of the product; the small non-standard microstrip waveguide formed by the metal thermal conductive base, main circuit board and metal shielding cover effectively controls the loss of the solid-state power amplifier bare tube core, especially the high-frequency and high-power solid-state power amplifier bare tube core during signal transmission and quickly dissipates heat, thereby fully exerting the performance of the solid-state power amplifier bare tube core while controlling the size.

[0052] In the embodiments of this application, both the input microstrip-to-waveguide transmission structure and the output microstrip-to-waveguide transmission structure are small, non-standard-sized structures, and the input and output microstrip lines used can serve as feeds for the microstrip-to-waveguides. Using microstrip-to-waveguide feeds for the input and output microstrip lines can significantly reduce signal chain losses and improve the overall power efficiency of the solid-state power amplifier. Furthermore, compared to fin-line antennas, the planar microstrip antenna has a smaller footprint, from the 50-ohm microstrip lines at the chip input and output to the coupled radiator. The use of small, non-standard-sized transmission waveguides in the embodiments of this application is equivalent to using non-standard input and output cavities that are significantly smaller than traditional rectangular waveguides, significantly reducing the size of the solid-state power amplifier. This non-standard-sized microstrip-to-waveguide feed achieves an area approximately half that of the traditional standard Ku-band WR75, which has a length and width of 19.05mm and 9.525mm, respectively. Furthermore, this smaller waveguide size also provides a certain degree of high-pass filtering functionality. If application requirements permit, a smaller ridge waveguide can be used while omitting the high-pass filtering functionality to achieve a smaller design.

[0053] Please refer to Figure 10-13, which are respectively a planar structural diagram of the input signal end of the input / output microstrip line provided in an embodiment of the present application, a planar structural diagram of the output signal end of the input / output microstrip line, a signal simulation result diagram of the input signal end of the input / output microstrip line, and a signal simulation result diagram of the output signal end of the input / output microstrip line.

[0054] The space formed by the metal shielding cover 10, the main circuit board 20 and the metal heat-conducting base 30 is equivalent to two signal input and output radiation cavities. The input and output radiation cavities cooperate with the microstrip probe to allow the microstrip probe to couple and radiate maximum energy within the applied frequency range. Figure 10 and Figure 11 Designed for Ku-band satellite communications, the input and output radiation cavities utilize small, non-standard rectangular waveguides. The largest output rectangular waveguide measures 11.8mm in length and 5.9mm in width, respectively. Compared to the WR75 waveguide used in the traditional Ku-band, its area is only about half that of the traditional Ku-band WR75 waveguide. Although its main mode is above 14.5GHz, through collaborative design with microstrip probes, it can effectively operate at a lower frequency of 13.75GHz and above. This also achieves better out-of-band low-frequency suppression. Furthermore, the extracavity area of ​​the metal shielding cover 10 is connected to the grounded metal window surface of the main circuit board 20, achieving full-unit signal shielding.

[0055] The input and output microstrip lines are inserted from the wide sides of the input and output radiation cavities respectively. According to the applied frequency, the depth of the waveguide short circuit surface and the depth of the microstrip probe entering the waveguide cavity and the length and width of the probe are coordinated to obtain the maximum electric field strength, so as to achieve the maximum energy coupled in and emitted out in the applied frequency range. The embodiment of the present application is applicable to the frequency range of the Ku band of satellite communication. The probe size design is as follows: Figure 10 and Figure 11 As shown in the simulation results, Figure 12 and Figure 13 shown.

[0056] In a specific implementation, the external power supply terminal 40 is divided into two groups, and the number of connection ports is two, and the two groups of external power supply terminals 40 are respectively exposed through a connection port. Exposing the external power supply terminal 40 through the connection port opened by the metal heat-conducting base 30 can eliminate external interference as much as possible. The external power supply terminal 40 can be a contact or a metal shrapnel. Through the contact or the metal shrapnel, a stable connection can be achieved with the external device without increasing external interference. The metal shrapnel is connected to the main circuit board through patch welding. The metal shrapnel soldered to the main circuit board through the patch has a firm connection and stable signal transmission.

[0057] In general, in terms of connection with external power supply, it is different from other traditional lead connections and pin socket connections, such as Figures 1-9As shown, the present design adopts a multiple-group metal spring crimping method, which is crimped with the metal window surface of the corresponding electrical properties on the outside to achieve a reliable and extremely simple connection. The metal spring can be sintered on the bottom of the main circuit board 20 (i.e., the side facing the metal heat-conducting base 30), but is not limited to being sintered on the top of the main circuit board 20 (i.e., the side facing the metal shielding cover 10). The external power supply terminal 40 of the main circuit board 20 can even be set as a contact, and an electrical connection is achieved with the external circuit through the contact, that is, the metal spring is welded on the circuit board corresponding to the external circuit. In the case where the external power supply terminal 40 is a metal spring, the connection accuracy can be guaranteed by positioning the pin hole at the bottom of the heat sink. The compression amount of the metal spring used in this design is about 1.2mm, the spring width is 1mm, and the top displacement is only 0.35mm. The corresponding external metal pad size is required to be larger than 1*0.35mm. The other side of the main circuit board 20 where the metal spring is located can rely on the metal shielding cover 10 or the carrier of the main circuit board 20 to provide sufficient stress support to ensure that the compression process of the spring does not cause deformation of the main circuit board 20.

[0058] Please refer to Figure 14 , which is a circuit schematic diagram of the power filter capacitor provided in an embodiment of the present application. In one specific implementation, the bias circuit device includes power filter capacitors for the gate and drain. The power filter capacitors for the gate and drain can effectively suppress stray signals during signal transmission. In another specific implementation, the power filter capacitors for the gate and drain each include multi-stage power filter capacitors. The multi-stage power filter capacitor can effectively suppress stray signals of various frequencies. The gate and drain are both provided with redundant power supply circuits. The redundant power supply circuits can ensure power supply in various states. The power supply feeder of the solid-state power amplifier is printed on the main circuit board 20 and connected to the external power supply terminal 40 through a metal via on the main circuit board 20. When the bare tube core 31 of the solid-state power amplifier faces the metal shielding cover 10 and the external power supply terminal 40 faces away from the metal shielding cover 10, the power supply feeder is printed on the main circuit board 20 and connected to the external power supply terminal 40 through a metal via. This ensures that the signal link on the main circuit board 20 can be completely shielded by the metal shielding cover 10, and also avoids the pollution generated during the traditional external power supply terminal welding process.

[0059] As described above, the solid-state power amplifier bare die 31 also requires gate and drain power feeds and external connections. In addition to signal transmission input and output microstrip lines, the main circuit board 20 also includes power filter capacitors of varying magnitude for the gate and drain, along with their power feeds. The source and drain power feeds are distributed on both sides of the solid-state power amplifier bare die 31. Specifically, because the design directly utilizes the solid-state power amplifier bare die 31, the gate and drain power feeds can be made without the use of larger, 1 / 4-wavelength high-resistance lines and fan-shaped microstrip structures typically found in traditional high-power packaged power amplifiers. This significantly reduces the size of the solid-state power amplifier. The power feeds extend to both sides of the main circuit board 20 and, through metal vias, penetrate the upper and lower layers and connect to the corresponding power pins of the lower layer's externally facing spring connector. The purpose of connecting to the lower layer through metal vias is to ensure that the upper layer's signal chain and components are fully shielded by the metal shielding cover 10. This design allows for full shielding of the power amplifier, reducing external multipath interference during use while also improving the device's protection.

[0060] Corresponding to the design of the specific contacts or metal springs of the external power supply terminal 40, the external power supply feeder only needs to be crimped with the external power supply terminal 40 through several metal springs or metal pads with different electrical properties to achieve effective power supply connection between the gate and the drain. In order to overcome the problem that the existing high-frequency printed circuit board medium is relatively soft and the corresponding main circuit board cannot withstand the pressure stress of the spring, the present design uses a metal shielding cover 10 or a substrate as the final support plate for the metal spring. Compared with other power supply connection methods such as lead welding, this design method greatly reduces the welding workload and greatly improves reliability. At the same time, it also reduces the pollution of the device due to the welding production process and the pollutants introduced thereby. In addition, the metal spring also has a hard connection design to prevent the possibility of failure of the solid-state power amplifier bare tube core 31 caused by external wiring errors. At the same time, compared with the traditional hard socket connection, it has a higher degree of installation freedom in all directions and a smaller size.

[0061] To mitigate the potential for metal shrapnel aging after long-term use and microscopic contact failure during strong vibration, which can lead to solid-state power amplifier failure, this design incorporates redundant gate and drain feeds on the main circuit board 20. This ensures that even if one of the feed pins loses its elasticity or fails to provide contact, it will not cause the solid-state power amplifier to fail or its associated products to malfunction. Of course, on the main circuit board 20, at least one set of filtering single-layer capacitors is located between the external power supply terminal 40 and the solid-state power amplifier bare die 31. Additional capacitors can be added to meet the needs of stable solid-state power amplifier operation. Two paths on a single side can provide the same gate voltage or two different gate voltages, while the other two paths on a single side provide the same drain voltage, for a total of eight paths. Each single path on each side is connected to a combination of at least two low-ESR ceramic capacitors with a value between 0.01 and 10 microfarads. This effectively suppresses various low-frequency spurious signals while ensuring stable power supply operation. Furthermore, to meet the needs of different gate power supplies and redundancy, this design incorporates a 51 ohm or greater resistor in series between the two independent gate paths. This resistor can balance the difference in gate voltage between the two paths (generally small, within approximately 0.2V), without affecting the independence of the two paths. Because the current is extremely low during normal gate operation, this resistor can be used to temporarily or permanently divert power from a properly connected power supply link when one path is abnormally connected, preventing any gate spring connection from opening abnormally and causing the solid-state power amplifier to fail. The drain feed circuit also uses multi-stage filter capacitors, which are combined into one path before connecting to the drains of the solid-state power amplifier bare tube core 31, achieving a redundant design for drain power supply.

[0062] The embodiment of the present application further provides a communication device, which includes the solid-state power amplifier in any of the above embodiments and has corresponding beneficial effects.

[0063] It should also be noted that the terms "comprises," "includes," or any other variations thereof are intended to encompass non-exclusive inclusion, such that a process, method, commodity, or apparatus that includes a series of elements includes not only those elements but also other elements not explicitly listed, or includes elements inherent to such process, method, commodity, or apparatus. In the absence of further limitations, an element defined by the phrase "comprises a ..." does not exclude the presence of other identical elements in the process, method, commodity, or apparatus that includes the element.

[0064] Note that the above are merely preferred embodiments of the present invention and the technical principles employed. Those skilled in the art will appreciate that the present invention is not limited to the specific embodiments described herein, and that various obvious changes, readjustments, and substitutions are readily apparent to those skilled in the art without departing from the scope of protection of the present invention. Therefore, while the present invention has been described in detail through the above embodiments, the present invention is not limited to the above embodiments and may include many other equivalent embodiments without departing from the scope of the present invention. The scope of the present invention is determined by the appended claims.

Claims

1. A solid-state power amplifier, characterized in that: It includes a metal heat-conducting base, a main circuit board, a metal shielding cover, a solid-state power amplifier bare die and fastening screws; The metal heat-conducting base is provided with a first input window, a first output window, a first set of mounting holes, and a connection port; the main circuit board is provided with a first device window and a second set of mounting holes; the metal shielding cover is provided with a first input slot, a first output slot, a device accommodating cavity, and a third set of mounting holes; the fastening screws are passed through the first set of mounting holes, the second set of mounting holes, and the third set of mounting holes to secure the stacked metal heat-conducting base, the main circuit board, and the metal shielding cover; The solid-state power amplifier bare die is sintered on the metal heat-conducting base and located at the first device window; The main circuit board is provided with bias circuit components, input and output microstrip lines and external power supply terminals; The solid-state power amplifier bare tube core, bias circuit device and input and output microstrip lines are all connected to corresponding electrical connection points through gold wires; the two ends of the input and output microstrip lines serve as the input signal end and the output signal end respectively, and the two sides of the input signal end face the first input window and the first input slot respectively, so as to be placed in the input microstrip-to-waveguide transmission structure formed by the first input window and the first input slot; the two sides of the output signal end face the first output window and the first output slot respectively, so as to be placed in the output microstrip-to-waveguide transmission structure formed by the first output window and the first output slot; the transmission structure of the input microstrip-to-waveguide and the transmission structure of the output microstrip-to-waveguide are both small non-standard size structures; the bias circuit device is embedded in the device accommodating cavity, and the external power supply terminal is exposed through the connection port.

2. The solid-state power amplifier according to claim 1, wherein: The external power supply terminals are divided into two groups, the number of the connection ports is two, and the two groups of external power supply terminals are exposed through one connection port respectively.

3. The solid-state power amplifier according to claim 2, wherein: The external power supply terminal is a contact or a metal spring.

4. The solid-state power amplifier according to claim 3, wherein: The external power supply terminal is arranged at the top or bottom of the solid-state power amplifier.

5. The solid-state power amplifier according to claim 4, wherein: The metal spring is connected to the main circuit board through patch welding.

6. The solid-state power amplifier according to claim 1, wherein: The bias circuit device includes a multi-stage power supply filter capacitor at the gate and drain.

7. The solid-state power amplifier according to claim 6, wherein: The gate and the drain are both provided with redundant power supply circuits.

8. Communication equipment, characterized in that A solid-state power amplifier comprising the solid-state power amplifier according to any one of claims 1 to 7.

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