Silicon wafer processing device and system

Abstract

The utility model relates to the field of photovoltaic technology, in particular to a silicon wafer processing device and system. The silicon wafer processing device comprises a plurality of main rollers arranged in sequence and cutting lines wound around the peripheries of the main rollers, the cutting lines form a line net between the main rollers, the line net comprises a first area and a second area which are sequentially arranged in the axial direction of the main rollers, and the wiring distance of the cutting lines in the second area is larger than that of the cutting lines in the first area; therefore, wire arch increase and cutting force limitation caused by lateral force concentration are reduced, and particularly for the cutting wire at the head of the first area, the problems of doubling and breaking of the cutting wire and the adjacent cutting wire can be effectively avoided.

Description

Technical Field

[0001] The present application relates to the field of photovoltaic technology, and in particular to a silicon wafer processing device and system. Background Art

[0002] With the development of the photovoltaic industry, reducing the cost per kilowatt-hour has become critical. In order to further reduce processing costs, silicon wafer thinning is one of the important ways to reduce silicon wafer costs.

[0003] Slicing is a key link in silicon wafer production. As silicon wafers become thinner, the cutting force cannot be well exerted in the initial stage of slicing, resulting in limited cutting force and easy formation of large line bows. As cutting proceeds, the cutting force gradually increases and the line bow decreases. However, due to a certain difference in the front and rear line bows, the lateral force of the cutting line increases during cutting, and the trajectory of the cutting line moves laterally. As the silicon wafer becomes thinner, the distance between adjacent cutting lines is smaller. Under the lateral force, the cutting line may be paralleled or broken, thereby increasing production costs and causing a decrease in slicing yield.

[0004] In order to solve this problem, the present utility model is proposed. Utility Model Content

[0005] In response to the above technical problems, the purpose of this application is to propose a silicon wafer processing device and system, which can reduce the cutting yield loss caused by cutting line parallelism, line breakage, etc. by changing the arrangement of the main rollers and cutting lines.

[0006] In a first aspect of the present application, a silicon wafer processing device is provided, comprising:

[0007] Multiple main rollers are arranged in sequence and cutting lines are wound around the outer circumference of the main rollers. The cutting lines form a wire network between the main rollers. The wire network includes a first area and a second area arranged in sequence along the axial direction of the main rollers. The wiring spacing of the cutting lines in the second area is greater than the wiring spacing of the cutting lines in the first area.

[0008] It should be noted that the main roller in this application refers to the roller involved in cutting. When cutting, multiple main rollers are arranged in parallel to cut the silicon rods to be cut; the rollers other than the main rollers in the slicing device are used for arranging wires, which are collectively referred to as auxiliary rollers or driven rollers. It can be understood that when there are multiple rollers in cutting, the main roller for cutting has a first area and a second area.

[0009] In a further embodiment of the present application, the wire mesh has a first side and a second side relative to each other, and on the first side, the cutting lines at the junction of the first area and the second area are parallel to each other; on the second side, the angle between the cutting line in the second area close to the first area and the axial direction of the main roller is 45 degrees to 90 degrees.

[0010] Since the cutting lines on the first side of the wire web are parallel to each other, the cutting lines in the second area have an angle with the axial direction of the main roller, and the angles between the cutting lines on both sides of the wire web and the axis of the main roller are different, the cutting lines can generate a component force along the axial direction of the main roller under the action of cutting tension. This component force can balance the lateral force generated during cutting, so as to reduce the occurrence of parallel lines and broken lines in the cutting lines in the first area a1.

[0011] In a further embodiment of the present application, in the second area, the cutting line forms a first angle with the axial direction of the main roller on the first side of the wire mesh, and a second angle with the axial direction of the main roller on the second side of the wire mesh, and the difference between the first angle and the second angle is less than or equal to 45°.

[0012] By setting the angle difference between the cutting line on one side and the other side of the second area of ​​the wire mesh to be less than 45°, the wear degree of the second area of ​​the cutting line can be increased, ensuring that the wire bow increases when the cutting line enters the first area of ​​the wire mesh.

[0013] In a further embodiment of the present application, the wire mesh has a first side and a second side opposite to each other. On the first side, the cutting lines at the junction of the first and second regions are parallel to each other, and the cutting lines of the second region are closer to the first side than the cutting lines of the first region.

[0014] Since the cutting line in the second area is closer to the wire mesh, when the silicon rod is cut, it contacts the silicon rod in the second area in advance, which alleviates the increase in wire bow caused by the cutting line contacting the first area first.

[0015] In a further embodiment of the present application, the main roller is provided with first line grooves at equal intervals, and the first line grooves are provided in the first area and the second area;

[0016] The cutting lines are arranged at intervals of X first line grooves in the first area and at intervals of Y first line grooves in the second area, where Y is greater than X.

[0017] It can be understood that the main roller is provided with first wire grooves with equal spacing. When preparing the main roller, there is no need to change the existing main roller processing method. It is only necessary to adjust the number of wire grooves separating the wire mesh in the first area and the second area during wiring to achieve different wiring spacing in the first area and the second area.

[0018] In a further solution of the present application, the main roller is provided with first wire grooves with equal spacing in the first area, and is provided with multiple second wire grooves in the second area; wherein the spacing between adjacent second wire grooves is greater than the spacing between the first wire grooves.

[0019] Arranging the first wire groove and the second wire groove of unequal spacing on the main roller can make it unnecessary to arrange the wires at intervals of a certain number of grooves when wiring. According to the wiring needs, reasonable wiring between adjacent wire grooves can achieve the adjustment of the wire bow and reduce abnormalities such as paralleling and breaking of wires.

[0020] In a further solution of the present application, in the second region, the wiring spacings of the cutting lines are at least partially the same.

[0021] The silicon rods entering the first area are pre-grinded in the second area. By setting the wiring spacing to a gradual spacing, for example, in a manner of increasing / decreasing in sequence, it is only necessary to ensure that the cutting wire can smoothly cut the silicon rods when entering the first area, thereby reducing the wire breakage rate.

[0022] In a further solution of the present application, the ratio of the lengths of the second region and the first region in the axial direction is set between 1:6 and 1:2.

[0023] In a further solution of the present application, the wire web further includes a third region. Along the axial direction of the main roller, the third region is located on a side of the first region away from the second region, and the third region and the second region are symmetrically arranged relative to the first region.

[0024] In a second aspect of the present application, a silicon wafer processing system is provided, comprising a silicon wafer processing device as described above and a clamping device, wherein the clamping device is used to clamp the silicon rod to be processed and move it from a first side to a second side relative to the wire mesh of the silicon wafer processing device.

[0025] In a further embodiment of the present application, the silicon rod to be processed includes a processing area corresponding to the first area, and a wear area corresponding to the second area. The wear area is arranged to be closer to the wire mesh than the processing area in the moving direction of the silicon rod to be processed; or the diameter of the main roller in the second area is larger than the diameter in the first area, and the cutting line in the second area is closer to the first side of the wire mesh than the cutting line in the first area; so that when the clamping device clamps the silicon rod to be processed and moves toward the silicon wafer processing device, the wear area contacts the wire mesh before the processing area.

[0026] In summary, the present invention provides a silicon wafer processing device comprising a plurality of main rollers and a plurality of cutting wires wound around the outer circumferences of the main rollers. The cutting wires form a wire web between the main rollers. The wire web comprises a first region and a second region sequentially arranged along the axial direction of the main rollers. The wiring spacing of the cutting wires in the second region is greater than the wiring spacing in the first region. The device has at least the following beneficial effects:

[0027] 1) In the silicon wafer processing apparatus, the spacing between the cutting lines in the second region is greater than the spacing in the first region. In the second region, the cutting lines are arranged at a first angle to the main roller axis on the first side (the feed side of the silicon ingots to be processed), and at a second angle to the main roller axis on the second side. This allows the cutting lines on the second side to generate an axial force component under cutting tension. This force component can balance the lateral force generated in the first region during the cutting process, thereby reducing the increase in wire bow and the limitation of cutting force caused by the concentrated lateral force. In particular, for the cutting lines at the head of the first region, the problems of line merging with and line breakage of adjacent cutting lines can be effectively avoided.

[0028] 2) A second area is set on the main roller, which allows the diamond cutting edge to make contact with the silicon rod to be cut in the second area in advance during the initial stage of slicing (when the diamond cutting edge is wrapped by the nickel layer), so as to alleviate the increase in wire bow caused by the new cutting wire entering the first area.

[0029] Other features and advantages of the embodiments of the present invention will be described in the subsequent specific embodiments. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] In order to more clearly illustrate the specific implementation methods of the present application or the technical solutions in the prior art, the following is a brief introduction to the drawings required for use in the specific implementation methods or the description of the prior art. Obviously, the drawings described below are some implementation methods of the present application. For those skilled in the art, other drawings can be obtained based on these drawings without any creative work.

[0031] Figure 1 A top view of a silicon wafer processing apparatus provided in an embodiment of the present application;

[0032] Figure 2 A top view of the main roller of the silicon wafer device provided by an embodiment of the present application in another configuration;

[0033] Figure 3 This is an axial schematic diagram of the silicon wafer processing system provided in this application.

[0034] The description of the accompanying drawings is as follows:

[0035] 100. Silicon wafer processing equipment;

[0036] 10. Main roller;

[0037] 11. First wire trough; 12. Second wire trough;

[0038] 20. Cutting line;

[0039] 21. First paragraph; 22. Second paragraph; 23. Third paragraph; 24. Fourth paragraph;

[0040] 200. Silicon wafer processing system;

[0041] 201, clamping device;

[0042] a1, first area; a2, second area. DETAILED DESCRIPTION

[0043] The terms "second direction", "first direction", "third direction", "inside", "outside" and the like that appear below to indicate directions or positional relationships, unless otherwise specified, are to be understood as being based on the directions or positional relationships shown in the accompanying drawings. They are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific direction, be constructed and operated in a specific direction. Therefore, they should not be understood as limiting this application.

[0044] Furthermore, the use of "first" or "second" in describing features is for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features identified. Features identified as "first" or "second" may explicitly or implicitly include at least one of the identified features. The use of the word "plurality" generally implies at least two, such as two or three, unless otherwise specifically defined.

[0045] In this application, unless otherwise specified or limited, terms such as "mounted," "connected," "connect," and "fixed" should be interpreted broadly. For example, they can refer to fixed connections, removable connections, or integration; mechanical connections, electrical connections, direct connections, or indirect connections through an intermediary; and internal connections between two components or interactions between two components. Those skilled in the art will understand the specific meanings of these terms in this application based on the specific circumstances.

[0046] In the description of this specification, if the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" appear, it means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the schematic expressions of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art can combine and combine different embodiments or examples described in this specification and the features of different embodiments or examples without contradiction.

[0047] Reference Figures 1 to 2The present application first provides a silicon wafer processing device 100, which includes a plurality of main rollers 10 arranged in sequence and cutting wires 20 wound around the outer circumference of the main rollers 10. The cutting wires 20 form a wire network between the main rollers 10, and the wire network includes a first area a1 and a second area a2 arranged in sequence along the axial direction of the main rollers 10. The wiring spacing of the cutting wires 20 in the second area a2 is greater than the wiring spacing of the cutting wires 20 in the first area a1.

[0048] It should be noted that the wiring spacing of the cutting line 20 in the first area a1 and the second area a2 is different. The wiring spacing in this application refers to the average of the wiring spacing in the first area a1 and the second area a2. By setting different wiring spacings, it can be ensured that when entering the first area a1, the lateral force of the cutting line 20 is reduced, so that the force on the cutting line 20 is evenly distributed, thereby solving the problem of paralleling and breaking of the cutting line 20.

[0049] In the embodiment of the present application, the second area a2 is defined as being located in the axial direction of the main roller 10. During the movement of the silicon rods to be processed to participate in cutting, the silicon rods to be processed contact the cutting wire 20 of the wire mesh first compared to the first area a1, and are guided to the second area a2 and gradually transported to the first area a1 as the main roller 10 rotates to participate in the actual cutting work.

[0050] In an embodiment of the present application, the cutting line 20 is wound around the outer periphery of multiple main rollers 10, and in the second area a2, the cutting line 20 forms a first angle with the axial direction of the main roller 10 on the first side of the wire mesh, and forms a second angle with the axial direction of the main roller 10 on the second side of the wire mesh.

[0051] In the embodiment of the present application, the difference between the first angle and the second angle is less than or equal to 45°. For example, it can be: 40°, 35°, 30°, 25°, 20°, etc. This application does not limit this. As long as it is less than 45°, it is within the scope of this application.

[0052] It should be noted that "wiring spacing" refers to the average spacing between adjacent cutting lines 20 on the main roller 10 in the axial direction of the main roller. In this application, the "first side" refers to the side of the main roller 10 where the silicon rod to be processed first contacts the wire mesh, which can be defined as the side where the cutting lines 20 first contact the silicon rod. The "second side" refers to the side opposite to the first side. For example, when the silicon rod to be processed is fed from top to bottom, the "first side" is the top side of the main roller 10, and the "second side" is the bottom side of the main roller 10.

[0053] It should be noted that the main roller 10 in this application refers to the roller involved in cutting, and the other rollers used for arranging the lines are collectively referred to as auxiliary rollers or driven rollers. It can be understood that when there are multiple rollers in cutting, the roller used for cutting has a first area a1 and a second area a2.

[0054] It can be understood that the second area a2 serves as a transition zone from the wire feed device to the main cutting area, ensuring the continuity of the cutting line 20 during the cutting process. Furthermore, the cutting line 20 forms a first angle with the axial direction of the main roller 10 on one side facing the direction of movement of the silicon rod to be processed, and a second angle with the axial direction on the other side.

[0055] Under the action of cutting tension, the cutting line 20 can generate a component force along the axial direction of the main roller 10, which can balance the lateral force generated during cutting, especially in the processing scenario where the new cutting line participates in cutting, so as to reduce the occurrence of line merging, line breakage, etc. in the cutting line of the first area a1.

[0056] In an optional embodiment, the wire mesh has a first side and a second side relative to each other, and on the first side, the cutting lines at the junction of the first area and the second area a2 are parallel to each other; on the second side, the angle between the cutting line 20 in the second area close to the first area a1 and the axial direction of the main roller 10 is 45 degrees to 90 degrees.

[0057] It should be noted that, on the first side of the wire mesh, the cutting lines in the first area a1 adjacent to the second area a2 are set to be parallel to each other, and on the second side of the wire mesh, the cutting lines in the first area a1 adjacent to the second area a2 are set at an angle to the main roller 10, which can balance the lateral force during cutting to a certain extent, thereby reducing the problems of wire breakage and line paralleling.

[0058] In an optional embodiment, the wire mesh has a first side and a second side relative to each other. On the first side, the cutting lines at the junction of the first area a1 and the second area a2 are parallel to each other, and the cutting lines of the second area a2 are closer to the first side than the cutting lines of the first area a1.

[0059] It can be understood that under the action of cutting tension, the cutting line 20 can generate a component force along the axial direction of the main roller 10, which can balance the lateral force generated during cutting, especially in the processing scenario where the new cutting line participates in cutting, so as to reduce the situation where the cutting line in the first area a1 is parallel or broken.

[0060] In this manner, the silicon rod to be processed first contacts the cutting wire 20 in the second region a2, and the cutting wire 20 is pre-ground to ensure that the wire bow does not increase when the cutting wire 20 contacts the silicon rod to be processed in the first region a1.

[0061] In an optional embodiment, the main roller 10 is provided with a plurality of line grooves arranged at equal intervals; the cutting lines 20 are arranged at intervals of X line grooves in the first area a1 and at intervals of Y line grooves in the second area a2, and Y is greater than X.

[0062] For example, assuming that the spacing between two wire grooves is d, when X=1, Y=3, that is, in the first area a1, a cutting line 20 is arranged every other wire groove, and the spacing between adjacent cutting lines in this area is 2d; while in the second area a2, the cutting line is arranged every 3 wire grooves, that is, in the second area a, the first groove, the fourth groove, the seventh groove... are arranged in sequence, and the spacing between adjacent cutting lines is 4d.

[0063] In the present application, X may be equal to 0, in which case a cutting line 20 is arranged in each wire groove in the first area a1.

[0064] Preferably, Y is set to be greater than or equal to 2, that is, in the second area a2, the interval between adjacent cutting lines 20 is greater than or equal to 3d.

[0065] It can be understood that the main roller 10 is provided with first wire grooves at equal intervals. When preparing the main roller, there is no need to change the existing main roller processing method. It is only necessary to adjust the number of wire grooves separating the wire mesh in the first area and the second area during wiring to achieve different wiring spacings in the first area and the second area; wherein, the wiring spacing in the second area can be the same or different, and the number of first wire grooves separating the cutting lines in the second area is not necessarily equal, so that the wiring spacing in the second area is unequal or equal, and this application does not limit this.

[0066] It should be noted that the spacing between the first line grooves in this application refers to the average groove spacing of the first line grooves on the main roller. Due to the need for splicing rods, the first line grooves with a spacing of 0 or not 0 may be set in the first area, which is also within the protection scope of this application.

[0067] In another alternative embodiment, Figure 2 The main roller 10 is provided with a plurality of first wire grooves 11 in the first area a1 and a plurality of second wire grooves 12 in the second area a2; wherein the spacing between adjacent second wire grooves 12 is greater than the spacing between the first wire grooves 11.

[0068] It can be understood that the layout of the wire troughs in the first area a1 and the second area a2 adopts an unequal spacing design. Specifically, the spacing between the wire troughs in the second area a2 is greater than the spacing between the wire troughs in the first area a1. For example, it is assumed that the spacing between two adjacent first wire troughs 11 in the first area a1 is 200um, and the spacing between two adjacent second wire troughs 12 in the second area a2 is 700um. Through the above setting, the winding operation process can be simplified. That is, the operator does not need to accurately count the number of wire troughs in the second area a2 to lay out the cutting line. Instead, the cutting line 20 can be directly laid out in each second wire trough 12 in turn, thereby improving wiring efficiency and accuracy, and increasing fault tolerance to avoid wiring errors.

[0069] It should be noted that the spacing between the first grooves 11 in this application refers to the average groove pitch of the first grooves 11 on the main roller 10, and the spacing between the second grooves 12 refers to the average groove pitch of the second grooves a2 in the second area a2.

[0070] It is understandable that for those skilled in the art, the slot pitch of the second wire trough 12 can be flexibly set. When adjusting the wire bow, multiple second wire troughs 12 can be spaced apart in the second area a2 for wiring, so that the wiring spacing within the second area a2 is equal or unequal. This application does not limit this.

[0071] In another optional embodiment, the present application sets the wiring spacing of the second area a2 to increase / decrease successively along the axis of the main roller 10, so that the adjustment of the wire bow changes gradually, ensuring that when entering the first area a1, the cutting line 20 will not fluctuate, and the cutting in the first area a1 is smoothly achieved.

[0072] For those skilled in the art, based on the need for adjustment, the wiring spacing of the second area a2 can be adjusted to decrease successively along the axial direction of the main roller 10, so as to ensure the stability of the wire web in the first area a1.

[0073] Furthermore, the number of the second wire slots 12 is preferably 3 to 5.

[0074] If the number of second wire slots 12 is too small (i.e., less than 3), the contact area between the wire and the silicon rod to be cut will be correspondingly reduced, thus failing to meet the requirement for pre-wearing the new wire in the second area a2. While more second wire slots 12 (i.e., greater than 5) can provide more pre-contact between the wire and the silicon rod to be cut, this will also increase friction between the new wire and the silicon rod to be cut, causing excessive wear of the nickel layer when the wire enters the first area a1, thus reducing the service life of the wire. In this application, using 3 to 5 wire slots can provide sufficient cutting wear for the wire 20 while avoiding excessive friction, helping to extend the service life of the wire 20 and improve cutting quality.

[0075] Furthermore, the interval between adjacent first wire grooves 11 is d1, and the interval between adjacent second wire grooves 12 is d2; d2 is 3 to 7 times of d1, and the range of d1 is 130um-160um.

[0076] The range of d1 makes the first region a1 suitable for thin wafer production. By adjusting the specific values ​​of d1 and d2 (within the above-given range), it can flexibly adapt to different cutting requirements. For example, when the thickness specification of the cut silicon wafer is smaller, a smaller d1 value between 130 μm and 160 μm can be selected.

[0077] When the center distance of the main roller 10 is constant, the range of d2 can change the angle between the second side and the axial direction of the cutting line 20; specifically, when d2 is larger, the angle between the second side and the axial direction of the cutting line 20 is smaller, and the corresponding lateral cutting force is greater.

[0078] Further, in the second region a2, an angle A between the cutting line 20 on the second side and the axial direction is 45 to 90 degrees.

[0079] Specifically, F1 is the cutting tension exerted on the cutting line 20 on the first side of the main roller 10, and F2 is the cutting tension exerted on the cutting line 20 on the second side of the main roller 10. Since the cutting line 20 is the same line, F1 = F2 = cutting tension. The cutting tension is specifically set according to the silicon wafer processing device 100. The lateral component F3 of F2 in the axial direction of the main roller 10 is calculated as follows:

[0080] F3=F2*cos A

[0081] As d2 increases, the angle A between the second side and the axial direction of the cutting line 20 decreases. Conversely, F3 increases, and thus the force exerted on the cutting line 20 in the first region a in a direction of lateral movement increases. Therefore, an appropriate d2 can be adaptively selected based on the desired balance of the cutting force in the first region a1.

[0082] At the junction of the first area a1 and the second area a2, the cutting line 20 in the second area a2 adjacent to the first area a1 is recorded as the first segment 21 (set perpendicular to the axial direction) on the first side, and the part connected to the first segment 21 on the second side is recorded as the second segment 22 (set at an angle to the axial direction), and the part where the first side and the second segment 22 are connected in the first area a1 is recorded as the third segment 23 (set perpendicular to the axial direction), and the part adjacent to the third segment 23 on the first side in the first area a1 is recorded as the fourth segment 24 (set perpendicular to the axial direction).

[0083] The first section 21 and the second section 22 are connected. The angle setting of the second section 22 enables the second section 22 to subject the third section 23 connected thereto to a component force F3 in the direction of the first section 21 under the action of cutting tension. When the first area a1 is involved in cutting, the lateral force applied to the third section 23 can be balanced by the component force F3 generated by the second section 22, thereby avoiding problems such as parallelism and breakage of the third section 23 and the fourth section 24.

[0084] The spacing between the second wire groove 12 and the adjacent first wire groove 11 is equal to the spacing between the second wire groove 12 and the adjacent second wire groove 12; or the spacing between the second wire groove 12 and the adjacent first wire groove 11 is greater than the spacing between the second wire groove 12 and the adjacent second wire groove 12.

[0085] When the spacing between the second grooves and adjacent first grooves, as well as the spacing between adjacent second grooves 12, are maintained equal, the lateral force in the second region a2 can be more uniform. Conversely, if the main roller 10 is long and the first region a1 accounts for a smaller proportion of the overall axial direction, it is preferred that the spacing between the second grooves 12 and adjacent first grooves 11 be greater than the spacing between the second grooves 12 and adjacent second grooves 12; this ensures that the component force generated by the cutting lines 20 in the second region a2 can sufficiently balance the lateral force in the first region a1.

[0086] In a specific solution, when the center distance D between two parallel main rollers arranged with the cutting lines 20 is set between 300 mm and 660 mm, the interval d3 between the first wire grooves 11 of adjacent second wire grooves 12 is set to 5 to 10 mm.

[0087] Furthermore, the ratio of the lengths of the second region a2 and the first region a1 in the axial direction is set to be between 1:6 and 1:2.

[0088] Continue reading Figure 1 Each main roller 10 further includes a third region a3 axially arranged on the outlet side of the first region a1 , and the third region a3 and the second region a2 are symmetrically arranged relative to the first region a1 .

[0089] The third area a3 helps balance forces during the cutting process. As the cutting line 20 moves along the main roller, it maintains a corresponding guide range both when entering the cutting area (through the second area a2) and when leaving the cutting area (through the third area a3). The centrally symmetrical design of the main roller 10 enhances structural stability. During high-speed or high-precision cutting, this helps maintain the straightness and accuracy of the cutting line, minimizing cut quality issues caused by equipment vibration or instability.

[0090] Furthermore, those skilled in the art should understand that if the other elements involved in the various products of the silicon wafer processing device 100 provided in the embodiments of the present invention are combined and replaced through embodiments such as fusion, simple changes, mutual transformation, etc., such as the placement and movement of the components; or a detachable design; or the products they constitute are set as one, such as an integrated design; all the combined components can form equipment / devices / systems with specific functions, and using such equipment / devices / systems to replace the corresponding components of the present invention also falls within the scope of protection of the present invention.

[0091] like Figure 3The present application also provides a silicon wafer processing system 200, which includes the silicon wafer processing device 100 and a clamping device 201 as described above; the clamping device 201 is used to clamp the silicon rod to be processed and move it relative to the wire mesh of the silicon wafer processing device 100 along the direction from the first side to the second side.

[0092] In a further embodiment of the present application, the silicon rod to be processed includes a processing area corresponding to the first area a1, and a wear area corresponding to the second area a2. The wear area is arranged to be closer to the wire mesh than the processing area in the moving direction of the silicon rod to be processed, so that when the clamping device 201 feeds the silicon rod to be processed to the silicon wafer processing device, the wear area pre-contacts the cutting line 20 of the second area a2.

[0093] In traditional silicon wafer processing, when a new cutting line first contacts a silicon rod in the first region a1, a wire bow effect is easily generated due to limited cutting force, which may cause a significant wire bow to the cutting line in the first region a1. In the present application, a wear zone is provided on the silicon rod to be processed, and is made to protrude relative to the processing zone in the feed direction. This allows the wear zone to first contact the cutting line 20 when the silicon rod to be processed is fed. In this way, the initial wear and wire bow effect of the cutting line 20 mainly act on the wear zone, thereby reducing the wire bow of the new cutting line in the first region a1, thereby reducing the wire bow difference during the cutting process, and ultimately reducing the magnitude of the lateral force. This improves the quality, efficiency, and stability of thin-film silicon wafer processing and further reduces production costs.

[0094] In a variation based on the present application, the diameter of the main roller 10 in the second area a2 is larger than the diameter in the first area a1, and the cutting line 20 in the second area a2 is closer to the first side of the wire mesh than the cutting line 20 in the first area a1; so that when the clamping device feeds the silicon rod to be processed to the silicon wafer processing device, the wear area pre-contacts the cutting line 20 in the second area a2.

[0095] Similarly, since the diameter of the second area a2 is larger, the cutting wire 20 thereon first contacts the wire mesh of the second area during the processing of the silicon rod. This allows the wear area of ​​the silicon rod to be processed to be fed to the silicon wafer processing device when the clamping device 201 feeds the silicon rod to be processed to the silicon wafer processing device. This ensures that the wear area can effectively perform preliminary wear on the cutting wire, thereby further reducing the impact of the cutting wire bow on the processing area (especially the first area a1). The details will not be repeated.

[0096] The various technical features described above can be combined arbitrarily. Although not all possible combinations of these technical features are described, any combination of these technical features should be considered to be covered by this specification as long as such combination does not conflict.

[0097] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit them. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still adjust the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these adjustments or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A silicon wafer processing device, characterized in that: include: A plurality of main rollers (10) are arranged in sequence, and cutting lines (20) are arranged around the outer peripheries of the main rollers (10), wherein the cutting lines (20) form a wire mesh between the main rollers (10), and the wire mesh comprises a first region (a1) and a second region (a2) arranged in sequence along the axial direction of the main rollers (10), and a wiring spacing of the cutting lines (20) in the second region (a2) is greater than a wiring spacing of the cutting lines (20) in the first region (a1).

2. The silicon wafer processing device according to claim 1, characterized in that: In the second area (a2), the cutting line (20) forms a first angle with the axial direction of the main roller (10) on the first side of the wire web and a second angle with the axial direction of the main roller (10) on the second side of the wire web, and the difference between the first angle and the second angle is less than or equal to 45°.

3. The silicon wafer processing device according to claim 1, wherein: The wire mesh has a first side and a second side relative to each other. On the first side, the cutting lines (20) at the junction of the first area (a1) and the second area (a2) are parallel to each other; on the second side, the angle between the cutting line (20) in the second area close to the first area and the axial direction of the main roller (10) is 45 degrees to 90 degrees.

4. The silicon wafer processing device according to claim 1, wherein: The wire mesh has a first side and a second side opposite to each other. On the first side, the cutting lines at the junction of the first area (a1) and the second area (a2) are parallel to each other, and the cutting line (20) of the second area (a2) is closer to the first side than the cutting line (20) of the first area.

5. The silicon wafer processing device according to claim 1, wherein: The main roller (10) is provided with first line grooves (11) at equal intervals, and the first line grooves are provided in the first area (a1) and the second area (a2); The cutting lines (20) are arranged at intervals of X first line grooves (11) in the first area (a1), and are arranged at intervals of Y first line grooves (11) in the second area (a2), and Y is greater than X.

6. The silicon wafer processing device according to claim 1, wherein: The main roller (10) is provided with first line grooves (11) at equal intervals in the first area (a1), and is provided with a plurality of second line grooves (12) in the second area (a2); Wherein, the spacing between adjacent second wire grooves (12) is greater than the spacing between adjacent first wire grooves (11).

7. The silicon wafer processing device according to claim 5 or 6, characterized in that: In the second area, the wiring pitches of the cutting lines (20) are at least partially the same.

8. The silicon wafer processing device according to claim 1, wherein: The length ratio of the second area (a2) to the first area (a1) in the axial direction of the main roller is between 1:6 and 1:

2.

9. The silicon wafer processing device according to claim 1, wherein: The wire mesh also includes a third area (a3), which is located on the side of the first area (a1) away from the second area (a2) along the axial direction of the main roller (10), and the third area (a3) ​​and the second area (a2) are symmetrically arranged relative to the first area (a1).

10. A silicon wafer processing system, characterized in that: include: The silicon wafer processing device according to any one of claims 1 to 8; The clamping device is used to clamp the silicon rod to be processed and move relative to the wire mesh of the silicon wafer processing device in a direction from the first side to the second side.

11. The silicon wafer processing system according to claim 10, wherein: The silicon rod to be processed comprises a processing area corresponding to the first area (a1) and a wear area corresponding to the second area (a2), wherein the wear area is arranged closer to the wire mesh than the processing area in the moving direction of the silicon rod to be processed; or The diameter of the main roller (10) in the second area (a2) is larger than the diameter in the first area (a1), so that the cutting line (20) in the second area (a2) is closer to the first side than the cutting line in the first area; When the clamping device clamps the silicon rod to be processed and moves toward the silicon wafer processing device, the wear area contacts the wire mesh before the processing area.

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