Plasma etching machine electrode structure

Abstract

The utility model relates to an electrode structure of a plasma etching machine, which comprises a vacuum chamber, an electrode assembly and baffle plates are arranged in the vacuum chamber, the electrode assembly comprises a plurality of vertical electrode plates arranged at equal intervals, the baffle plates are arranged on the left side and the right side of the electrode assembly, and the baffle plates are parallel to the electrode plates. The distance from the baffle plate to the nearest electrode plate is equal to half of the distance between two adjacent electrode plates; therefore, the distance from the first circuit board to the first electrode plate is equal to the distance from the baffle to the first electrode plate, the distance from the penultimate circuit board to the penultimate electrode plate is equal to the distance from the baffle to the penultimate electrode plate, and reaction gas between the baffle and the side wall of the vacuum chamber cannot be obtained immediately. And a reaction gas environment which is the same as that of other circuit boards in the middle position is created for the first circuit board / the last but one circuit board, so that the etching rates of the first circuit board / the last but one circuit board are kept consistent, and the etching uniformity of the plasma etching machine is improved.

Description

Technical Field

[0001] The utility model relates to the field of plasma etching, in particular to an electrode structure of a plasma etcher. Background Art

[0002] A plasma etcher is a semiconductor manufacturing device that uses plasma to selectively remove materials. Its core principle is to use high-energy particles (ions, electrons, free radicals, etc.) generated by gas discharge to physically or chemically react with the material surface, thereby achieving precise material removal. It primarily consists of a vacuum chamber, within which is housed an electrode assembly consisting of several parallel, equally spaced electrode plates.

[0003] Taking the etching of circuit boards as an example, before work, the circuit boards are fixed in the center position between each two electrode plates, and then the vacuum chamber is evacuated. After evacuation, the reaction gas is injected. After the reaction gas is evenly dispersed in the vacuum chamber, the electrode assembly is energized. Under the electrical action of the electrode assembly, the reaction gas is excited into high-energy particles (ions, electrons, free radicals, etc.), and then the circuit board is etched by the high-energy particles.

[0004] During the entire reaction process, the several circuit boards located between the second electrode plate and the penultimate electrode plate have the same spacing between each two adjacent electrode plates, and the volume of reaction gas available during the etching process of each circuit board between the second electrode plate and the penultimate electrode plate is basically the same, so the etching degree of these circuit boards is consistent.

[0005] However, for the circuit board located between the first and second electrode plates, and the circuit board located between the penultimate and second-to-last electrode plates, the outside of the first / penultimate electrode plates is the side wall of the vacuum chamber, and the distance between the first / penultimate electrode plates and the side wall of the vacuum chamber is greater than the spacing between adjacent electrode plates (design requirements to prevent collision between the electrode assembly and the vacuum chamber). This means that when the first circuit board is being etched, in addition to obtaining the reaction gas between the first and second electrode plates, it can also obtain the reaction gas between the first electrode plate and the side wall of the vacuum chamber (the reaction gas is excited into high-energy particles that can easily pass through the electrode plates and be reacted by the circuit boards); when the penultimate circuit board is being etched, in addition to obtaining the reaction gas between the penultimate and second-to-last electrode plates, it can also obtain the reaction gas between the penultimate electrode plate and the side wall of the vacuum chamber. This results in the etching degree of the first and penultimate circuit boards in the electrode assembly being significantly higher than that of the other circuit boards located in the middle, affecting the overall etching uniformity of the plasma etcher. Utility Model Content

[0006] In order to overcome the above problems, the present invention provides an electrode structure for a plasma etching machine. The technical solution adopted by the present invention to solve the technical problems is as follows:

[0007] A plasma etcher electrode structure includes a vacuum chamber, in which an electrode assembly and a baffle are arranged. The electrode assembly includes a plurality of electrode plates arranged vertically and at equal intervals. The baffles are located on the left and right sides of the electrode assembly. The baffles are parallel to the electrode plates, and the distance from the baffle to the nearest electrode plate is equal to half the distance between two adjacent electrode plates.

[0008] Furthermore, the baffle is insulated and connected to the inner wall of the vacuum chamber.

[0009] Furthermore, the top end of the baffle is fixedly hung on the top wall of the vacuum chamber through the first insulating block.

[0010] Furthermore, the baffle is fixedly connected to the inner wall of the electrode assembly / vacuum chamber through the second insulating block.

[0011] Furthermore, the baffle is made of aluminum alloy material.

[0012] Furthermore, the front-to-back width of the baffle is equal to the front-to-back width of the electrode plate, and the top-to-bottom height of the baffle is greater than or equal to the top-to-bottom height of the electrode plate.

[0013] The beneficial effects of the utility model are:

[0014] The electrode structure of the plasma etcher includes a vacuum chamber, in which an electrode assembly and a baffle are arranged. The electrode assembly includes a plurality of electrode plates arranged vertically and at equal intervals. The baffle is located on the left and right sides of the electrode assembly, is parallel to the electrode plates, and the distance from the baffle to the nearest electrode plate is equal to half the distance between two adjacent electrode plates; in this way, the distance from the first circuit board to the first electrode plate is equal to the distance from the baffle to the first electrode plate, and the distance from the last circuit board to the last electrode plate is equal to the distance from the baffle to the last electrode plate. The reaction gas between the baffle and the side wall of the vacuum chamber will not be immediately obtained, creating a reaction gas environment for the first circuit board / the last circuit board that is the same as that of other circuit boards in the middle, so that their etching rates are consistent, thereby improving the etching uniformity of the plasma etcher. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] The present invention will be further described below with reference to the accompanying drawings and specific embodiments, wherein:

[0016] Figure 1 It is a three-dimensional view of the electrode structure of the plasma etcher;

[0017] Figure 2 is a perspective view of the electrode assembly and baffle;

[0018] Figure 3 is an exploded view of the electrode assembly and baffle;

[0019] Figure 4 It is the front view of the electrode assembly and baffle.

[0020] Figure number mark:

[0021] 100. Vacuum chamber; 101. Electrode assembly; 102. Baffle; 103. Electrode plate; 104. First insulating block; 105. Second insulating block; 106. Inlet; 107. Hook. DETAILED DESCRIPTION

[0022] In order to better understand the purpose, structure and function of the present invention, the following is a further detailed description of a specific embodiment of the present invention "a plasma etching machine electrode structure" in conjunction with the accompanying drawings.

[0023] See also Figure 1-Figure 4 In this embodiment, the electrode structure of the plasma etcher includes a vacuum chamber 100, in which an electrode assembly 101 and a baffle 102 are arranged. The electrode assembly 101 is in the shape of a fence, and includes a plurality of electrode plates 103 arranged vertically and at equal intervals. The electrode plates 103 are perpendicular to the entrance 106 of the vacuum chamber 100. The two baffles 102 are respectively located on the left and right sides of the electrode assembly 101. The baffles 102 are parallel to the electrode plates 103, and the distance from the baffle 102 to the nearest electrode plate 103 is equal to half the distance between the two adjacent electrode plates 103. When etching a circuit board, a circuit board is set at the center position between every two adjacent electrode plates 103. In this electrode structure, the distance between the outermost circuit board and the outermost electrode plate 103 will be equal to the distance between the outermost electrode plate 103 and the baffle 102. In this way, during the reaction process, the reaction gas between the baffle 102 and the cavity wall of the vacuum chamber 100 will be blocked by the baffle 102, and will not easily flow to the outermost electrode plate 103 and be excited into high-energy particles to react with the outermost circuit board, ensuring that the amount of reaction gas obtained by the outermost circuit board during the entire reaction process is almost the same as the amount of reaction gas obtained by the middle circuit board during the entire reaction process, thereby ensuring that the etching degree of each circuit board in the electrode assembly 101 remains consistent, ensuring the etching uniformity of the plasma etcher.

[0024] Preferably, in this embodiment, the baffle 102 is made of aluminum alloy, and the material of the baffle 102 is consistent with the material of the inner wall of the vacuum chamber 100 .

[0025] See further Figure 2-Figure 4In this embodiment, the baffle 102 is insulated from the inner wall of the vacuum chamber 100 to prevent the reaction gas between the baffle 102 and the side wall of the vacuum chamber 100 from being excited into high-energy particles after the baffle 102 is energized, and from passing through the baffle 102 and the electrode plate 103 and reacting with the circuit board. Preferably, the top of the baffle 102 is fixedly mounted on the top wall of the vacuum chamber 100 via a first insulating block 104. The first insulating block 104 is preferably a Teflon block, and a hook 107 is provided between the first insulating block 104 and the top of the baffle 102. The first insulating block 104 is fixedly mounted on the top of the vacuum chamber 100, and the hook 107 is screwed to the first insulating block 104. The hook 107 is detachably fixed to the top of the baffle 102 to facilitate replacement of the baffle 102.

[0026] More specifically, in this embodiment, the baffle 102 is fixedly connected to the electrode assembly 101 through the second insulating block 105, ensuring the stability of the baffle 102 and ensuring that the distance from the baffle 102 to the outermost electrode plate 103 is fixed and always equal to half of the distance between two adjacent electrode plates 103, that is, the distance between the circuit board and the nearest electrode plate 103.

[0027] Of course, in other embodiments, the baffle 102 may also be fixedly connected to the inner wall of the vacuum chamber 100 via the second insulating block 105 , which can also play the above-mentioned role.

[0028] Furthermore, in this embodiment, the front-to-back width of the baffle 102 is equal to the front-to-back width of the electrode plate 103, and the upper and lower heights of the baffle 102 are greater than or equal to the upper and lower heights of the electrode plate 103, so as to ensure that the baffle 102 can effectively block the reaction gas between the baffle 102 and the side wall of the vacuum chamber 100 from flowing toward the electrode plate 103.

[0029] It should be noted that the baffle 102 can block the reaction gas between the baffle 102 and the side wall of the vacuum chamber 100 from flowing directly to the electrode plate 103, but its upper and lower ends always remain connected. However, since no turbulence is generated in the vacuum chamber 100 during the reaction, before the end of the reaction, the baffle 102 is sufficient to keep most of the reaction gas between the baffle 102 and the side wall of the vacuum chamber 100 between the baffle 102 and the side wall of the vacuum chamber 100. Some reaction gas escaping from the top or bottom will not affect the etching degree of the circuit board at the edge.

[0030] It is understood that the present invention is described by way of certain embodiments, and those skilled in the art will appreciate that various changes or equivalent substitutions may be made to these features and embodiments without departing from the spirit and scope of the present invention. Furthermore, under the guidance of the present invention, these features and embodiments may be modified to suit specific circumstances and materials without departing from the spirit and scope of the present invention. Therefore, the present invention is not limited to the specific embodiments disclosed herein, and all embodiments falling within the scope of the claims of this application are intended to be protected by the present invention.

[0031] In the description of the present invention, it should be noted that the terms "center", "up", "down", "left", "right", "vertical", "horizontal", "inside", "outside" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the devices or elements referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. In the description of this application, "multiple" and "several" are understood to be "at least two". "And / or" describes the association relationship of associated objects, indicating that three relationships may exist. For example, A and / or B can mean: A exists alone, A and B exist at the same time, and B exists alone. A is connected to B, which can mean: A is directly connected to B and A is connected to B through C. In addition, the terms "first", "second" and "third" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance.

Claims

1. A plasma etching machine electrode structure, comprising a vacuum chamber (100), wherein an electrode assembly (101) is arranged in the vacuum chamber (100), wherein the electrode assembly (101) comprises a plurality of electrode plates (103) arranged vertically and at equal intervals, characterized in that: A baffle (102) is further provided in the vacuum chamber (100), and the baffle (102) is located on the left and right sides of the electrode assembly (101). The baffle (102) is parallel to the electrode plate (103), and the distance between the baffle (102) and the nearest electrode plate (103) is equal to half the distance between two adjacent electrode plates (103).

2. The plasma etching machine electrode structure according to claim 1, characterized in that: The baffle (102) is insulated and connected to the inner wall of the vacuum chamber (100).

3. The plasma etching machine electrode structure according to claim 2, characterized in that: The top end of the baffle (102) is fixedly hung on the top wall of the vacuum chamber (100) via a first insulating block (104).

4. The plasma etching machine electrode structure according to claim 3, characterized in that: The baffle (102) is fixedly connected to the inner wall of the electrode assembly (101) / the vacuum chamber (100) via a second insulating block (105).

5. The plasma etching machine electrode structure according to claim 4, characterized in that: The baffle (102) is made of aluminum alloy material.

6. The plasma etching machine electrode structure according to any one of claims 1 to 5, characterized in that: The front-to-back width of the baffle (102) is equal to the front-to-back width of the electrode plate (103), and the top-to-bottom height of the baffle (102) is greater than or equal to the top-to-bottom height of the electrode plate (103).

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