Double-die bonding layer LED packaging support and LED module
The LED packaging bracket with a double-solid-crystal layer structure solves the problems of uneven luminescence and small range caused by the simple distribution of the solid-crystal area in the existing technology, and achieves better light uniformity and range control.
Patent Information
- Application Number
- CN202422881487.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-25
- Publication Date
- 2025-10-17
- Estimated Expiration
- 2034-11-25
AI Technical Summary
The existing LED packaging bracket has the problem of simple distribution of the die-bonding area and ineffective coordination between the chips, resulting in uneven light emission and a small light emission range.
It adopts a double-solidification layer structure, including a central raised solidification area and an annular solidification area. The two have different thicknesses and are connected to the electrode layer separately or simultaneously. It can place LED chips and control the opening and closing of the chip through the electrode layer. The annular solidification area is set on the outside of the central raised solidification area, and the thickness is adjusted to change the light path.
The luminous uniformity and luminous range of the LED are improved, and the divergence angle of the light beam can be adjusted as needed to achieve focusing or astigmatism effects.
Smart Images
Figure CN223452357U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The present application relates to the technical field of LED packaging support, in particular to a double die attach layer LED packaging support and an LED module. BACKGROUND
[0002] In order to achieve various light effects, the existing LED and the like will place several LED chips together, and adjust the light effect through the opening and distribution of the LED chips. In order to facilitate the installation and packaging of the chips, the LED manufacturers correspondingly produce LED packaging supports with several die attach layers. However, the existing chips are simply spliced, so that the die attach area corresponding to the chips is simply distributed, and the color temperature between different chips cannot be well connected, resulting in uneven light emission and small light emission range. At the same time, the LED packaging support will block part of the chip light, resulting in the problem of light emission in some dull areas.
[0003] Therefore, the existing LED packaging support has the problems of simple die attach area distribution and ineffective cooperation between chips to improve the uniformity and range of LED light emission. CONTENT OF THE INVENTION
[0004] In view of the above problems of the prior art, the purpose of the present application is to provide a double die attach layer LED packaging support, which aims to solve the problems of simple die attach area distribution and ineffective cooperation between chips to improve the uniformity and range of LED light emission of the existing LED packaging support.
[0005] The technical solution adopted by the present application to solve the technical problems is as follows: a double die attach layer LED packaging support is provided, which comprises: a substrate; a central raised die attach area arranged on the substrate; a ring-shaped die attach area arranged on the outer side of the central raised die attach area; the thickness of the central raised die attach area is different from the thickness of the ring-shaped die attach area; an electrode layer arranged on the end surface of the substrate away from the central raised die attach area; and the central raised die attach area and the ring-shaped die attach area are connected with the electrode layer.
[0006] Optionally, the thickness of the central raised die attach area is less than the thickness of the ring-shaped die attach area, and the thickness of the ring-shaped die attach area decreases along the direction close to the central raised die attach area.
[0007] Optionally, the intersection of the center lines of the ring-shaped die attach areas is located on the center line of the central raised die attach area.
[0008] Optionally, the thickness of the central raised die attach area is greater than the thickness of the ring-shaped die attach area, and the thickness of the ring-shaped die attach area increases along the direction close to the central raised die attach area.
[0009] Optionally, the spacing between the central convex die bonding area and the annular die bonding area is less than or equal to the width of the annular die bonding area.
[0010] Optionally, a first through hole is arranged on the substrate at a position corresponding to the central convex die bonding area, and the electrode layer is connected to the central convex die bonding area through the first through hole; a second through hole is arranged on the substrate at a position corresponding to the annular die bonding area, and the electrode layer is connected to the annular die bonding area through the second through hole.
[0011] Optionally, the annular die bonding area is composed of a plurality of annular die bonding sub-areas, and each of the annular die bonding sub-areas is connected to the electrode layer.
[0012] Optionally, the electrode layer includes a positive electrode layer and a negative electrode layer, and there is a gap between the positive electrode layer and the negative electrode layer; the positive electrode layer includes a first positive electrode layer connected to the central convex die bonding area and a second positive electrode layer connected to the annular die bonding area; and the negative electrode layer includes a first negative electrode layer connected to the central convex die bonding area and a second negative electrode layer connected to the annular die bonding area.
[0013] Optionally, an insulating layer is arranged on the gap, and the insulating layer is used to insulate the positive electrode layer and the negative electrode layer.
[0014] The application also provides an LED module, which includes a first chip, a second chip, and a double die bonding layer LED packaging support as described above; the first chip is arranged in the central convex die bonding area, and the second chip is arranged in the annular die bonding area.
[0015] Compared with the prior art, the application provides a double die bonding layer LED packaging support and an LED module, the double die bonding layer LED packaging support includes a central convex die bonding area and an annular die bonding area, both of which are connected to an electrode layer and can be powered on through the electrode layer at the same time or separately; both of the two areas can place chips of LEDs, and the opening and closing of the chips can be controlled respectively or simultaneously; the annular die bonding area is arranged on the outside of the central convex die bonding area, the chips arranged on the annular die bonding area can be connected to the light emitted by the chips arranged on the central convex die bonding area from the outside, and the thickness of the annular die bonding area and the central convex die bonding area can be adjusted to change the light path of the light emission, thereby improving the light emission range and the uniformity of the light. BRIEF DESCRIPTION OF DRAWINGS
[0016] Figure 1 is a front view of the double die bonding layer LED packaging support provided in the application;
[0017] Figure 2 is a front view and a sectional view of another embodiment of the double die bonding layer LED packaging support provided in the application;
[0018] Figure 3is a sectional view of another embodiment of the double die attach layer LED package carrier provided in the present application;
[0019] Figure 4 is a sectional view of another embodiment of the double die attach layer LED package carrier provided in the present application;
[0020] Figure 5 is a sectional view of another embodiment of the double die attach layer LED package carrier provided in the present application;
[0021] Figure 6 is a sectional view of another embodiment of the double die attach layer LED package carrier provided in the present application;
[0022] Figure 7 is a front view of another embodiment of the double die attach layer LED package carrier provided in the present application.
[0023] BRIEF DESCRIPTION OF DRAWINGS
[0024] 1, substrate; 2, central bump die attach area; 3, ring die attach area; 31, first ring die attach sub-area; 32, second ring die attach sub-area; 33, third ring die attach sub-area; 34, fourth ring die attach sub-area; 35, connecting groove; 4, electrode layer. DETAILED DESCRIPTION
[0025] Embodiments of the present application are described below in detail with reference to the accompanying drawings, in which examples of the embodiments are shown, wherein the same or similar notations are used to denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by reference to the accompanying drawings are exemplary, and are only for the purpose of explaining the present application, and cannot be understood as limiting the present application.
[0026] In the description of the present application, it is to be understood that the terms "center", "longitudinal", "lateral", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the purpose of facilitating the description of the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as limiting the present application. In addition, the terms "first", "second" are only for the purpose of description, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the technical features indicated. Therefore, the features defined with "first", "second" can explicitly or implicitly include one or more of the features. In the description of the present application, unless otherwise stated, the meaning of "a plurality of" is two or more.
[0027] In the description of the present application, it should be noted that unless otherwise explicitly specified and limited, the terms "mounting", "connection", "connecting" should be understood in a broad sense, for example, it can be fixed connection, or detachable connection, or integrally connected; it can be directly connected, or indirectly connected through an intermediate medium. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.
[0028] In combination with reference Figure 1 , Figure 2 and Figure 3 , a double die bonding layer LED packaging support is provided in the first embodiment of the present application, comprising: a substrate 1; a central raised die bonding area 2 arranged on the substrate 1; a ring-shaped die bonding area 3 sleeved on the outer side of the central raised die bonding area 2; the thickness of the central raised die bonding area 2 is different from the thickness of the ring-shaped die bonding area 3; an electrode layer 4 arranged on the end surface of the substrate 1 away from the central raised die bonding area 2; the central raised die bonding area 2 and the ring-shaped die bonding area 3 are connected with the electrode layer 4.
[0029] Wherein, the substrate 1 can be a ceramic plate, a metal plate, an alloy plate, etc., having a certain hardness and being made of a material resistant to high temperature and uniform heat dissipation; specifically, the ceramic plate can be an aluminum nitride-containing ceramic plate, which can further improve its high temperature resistance. The central raised die bonding area 2 and the ring-shaped die bonding area 3 are used to arrange the chips of the LED and connect with the chips to control the opening and closing of the chips.
[0030] The central raised die bonding area 2 and the ring-shaped die bonding area 3 can be thick copper layers electrocast on the substrate 1, and the central raised die bonding area 2 and the ring-shaped die bonding area 3 are connected with the electrode layer 4, and the opening and closing of the chips on the central raised die bonding area 2 and the chips on the ring-shaped die bonding area 3 are controlled through the circuit communication of the electrode layer 4.
[0031] The thickness of the central raised die bonding area 2 and the thickness of the ring-shaped die bonding area 3 are different, which can make the chips arranged on the central raised die bonding area 2 and the chips arranged on the ring-shaped die bonding area 3 in different planes, staggered in space, which is conducive to the cooperation of the two area chips, so as to make the emitted light connect with each other, thereby improving the uniformity of light emission and increasing the light emission range. No gap can be provided between the central raised die bonding area 2 and the ring-shaped die bonding area 3, so as to ensure the continuity of the emitted light. The central raised die bonding area 2 and the electrode layer 4, the ring-shaped die bonding area 3 and the electrode layer 4 can be electrically connected through metallized vias.
[0032] The double die bonding layer LED packaging support provided by the embodiment comprises a central protruding die bonding area 2 and a ring-shaped die bonding area 3, both of which are connected with an electrode layer 4 and can be powered by the electrode layer 4 at the same time; both of the areas can place chips of LEDs and control the opening and closing of the chips respectively or at the same time, the ring-shaped die bonding area 3 is sleeved outside the central protruding die bonding area 2, the chips arranged on the ring-shaped die bonding area 3 can connect the light emitted by the chips arranged on the central protruding die bonding area 2 from the outside, and the thickness of the ring-shaped die bonding area 3 and the central protruding die bonding area 2 can be adjusted to change the light path of the emitted light, thereby improving the light emitting range and the uniformity of the light.
[0033] The double die bonding layer LED packaging support of the embodiment can package an LED module, specifically, corresponding chips are arranged on the central protruding die bonding area 2 and the ring-shaped die bonding area 3, and convex lenses or concave lenses can be additionally arranged above the chips according to application scenarios, for example, convex lenses can be additionally arranged to make a flashlight, a street lamp for road lighting, and the like, convex lenses can be additionally arranged to make a spotlight for an exhibition area, a stage lamp, a car lamp, and the like.
[0034] The thickness of the central protruding die bonding area 2 and the thickness of the ring-shaped die bonding area 3 are different, and the chips of which area to open can be selected according to application needs. For example, when a light beam with a small divergence angle is needed, only the chips of the central protruding die bonding area 2 can be opened to emit a spotlight effect close to a parallel light beam; the thickness of the ring-shaped die bonding area 3 can be set to be greater than the thickness of the central protruding die bonding area 2, so that the light emitted by the chips of the two areas does not affect or has a small effect, thereby making the emitted light beam close to parallel; the center line intersection of the ring-shaped die bonding area 3 can intersect the center line of the central protruding die bonding area 2 to improve the spotlight effect.
[0035] For example, when a light beam with a large divergence angle is needed, only the chips of the ring-shaped die bonding area 3 can be opened to make the emitted light in a transverse defocus state, increase the light beam divergence angle, and emit an effect close to a parallel light beam; the thickness of the ring-shaped die bonding area 3 can be set to be less than the thickness of the central protruding die bonding area 2, and the chips on the two areas are in a double defocus state of transverse defocus superimposed longitudinal defocus, the light beam divergence angle can be increased when the chips on the two areas are lit at the same time, so that the light emitted by the chips of the two areas diffuses and overlaps with each other, thereby increasing the effect of scattered light; the center line of the ring-shaped die bonding area 3 cannot intersect, further increasing the light beam divergence angle and the effect of scattered light.
[0036] In some embodiments, the thickness of the central protruding die bonding area 2 is less than the thickness of the ring-shaped die bonding area 3, so that the light emitted by the chips of the two areas does not affect or has a small effect, thereby making the emitted light beam close to parallel, thereby achieving the effect of spotlight.
[0037] In combination with reference Figure 4, the thickness of the central convex die bonding area 2 is less than the thickness of the annular die bonding area 3, and the thickness of the annular die bonding area 3 decreases along the direction close to the central convex die bonding area 2, so that the light emitted by the chip arranged on the annular die bonding area 3 can be concentrated, thereby achieving a further light concentration effect.
[0038] Further, the intersection of the center lines of the annular die bonding area 3 is located on the center line of the central convex die bonding area 2. The intersection of the center lines of the chip arranged on the annular die bonding area 3 and the chip arranged on the central convex die bonding area 2 can be achieved, thereby reducing the divergence angle between the light beams and enhancing the light concentration effect. Preferably, the angle between the center line of the annular die bonding area 3 and the center line of the central convex die bonding area 2 is less than 60°, which can enhance the luminous brightness and irradiate the bright light to a farther distance.
[0039] In some embodiments, the thickness of the central convex die bonding area 2 is greater than the thickness of the annular die bonding area 3; the chips on the two areas are in a double defocus state of transverse defocus superposition and longitudinal defocus, and the light beams emitted by the chips on the two areas can be diffused and overlapped with each other when the chips on the two areas are lit at the same time, thereby increasing the light scattering effect.
[0040] For reference Figure 5 , the thickness of the central convex die bonding area 2 is greater than the thickness of the annular die bonding area 3, and the thickness of the annular die bonding area 3 increases along the direction close to the central convex die bonding area 2, so that the center line of the annular die bonding area 3 cannot intersect, thereby further increasing the divergence angle of the light beams and increasing the light scattering effect.
[0041] Further, the distance between the central convex die bonding area 2 and the annular die bonding area 3 is less than or equal to the width of the annular die bonding area 3, which can prevent the distance from being too large, thereby causing the emitted light to be uneven or causing the emitted light to have shadows, so that the light emitting effect is not good.
[0042] The first through hole is arranged on the substrate 1 corresponding to the position of the central convex die bonding area 2, and the electrode layer 4 is connected with the central convex die bonding area 2 through the first through hole; the second through hole is arranged on the substrate 1 corresponding to the position of the annular die bonding area 3, and the electrode layer 4 is connected with the annular die bonding area 3 through the second through hole.
[0043] For reference Figure 6 In some embodiments, the surface of the annular die bonding area 3 can be provided with a connecting groove 35, which can facilitate the placement of the chip and improve the connection stability with the chip; similarly, the surface of the central convex die bonding area 2 can also be provided with a connecting groove 35, which can enhance the connection stability with the chip.
[0044] Specifically, the electrode layer 4 includes a positive electrode layer and a negative electrode layer, and a gap is arranged between the positive electrode layer and the negative electrode layer; the positive electrode layer includes a first positive electrode layer connected to the central convex die bonding area 2 and a second positive electrode layer connected to the annular die bonding area 3; and the negative electrode layer includes a first negative electrode layer connected to the central convex die bonding area 2 and a second negative electrode layer connected to the annular die bonding area 3. That is, the positive electrode layer and the negative electrode layer are prevented from contacting each other through the gap to cause short circuit.
[0045] Specifically, the first positive electrode layer and the first negative electrode layer connect the electrode layer 4 and the central convex die bonding area 2 to form a complete loop, so that the electrical conduction state of the central convex die bonding area 2 can be controlled; and the second positive electrode layer and the second negative electrode layer connect the electrode layer 4 and the annular die bonding area 3 to form a complete loop, so that the electrical conduction state of the annular die bonding area 3 can be controlled. Preferably, a gap is arranged between the first positive electrode layer and the second positive electrode layer, and a gap is also arranged between the first negative electrode layer and the second negative electrode layer, that is, the electrical conduction state of the central convex die bonding area 2 and the electrical conduction state of the annular die bonding area 3 can be separately controlled through the electrode layer 4.
[0046] In some embodiments, the annular die bonding area 3 is composed of a plurality of annular die bonding sub-areas, and the plurality of annular die bonding sub-areas are connected to the electrode layer 4; and a gap can be arranged between the annular die bonding sub-areas. For reference, see Figure 7 The annular die bonding area 3 includes a first annular die bonding sub-area 31, a second annular die bonding sub-area 32, a third annular die bonding sub-area 33, and a fourth annular die bonding sub-area 34, and the above-mentioned annular die bonding sub-areas can be connected to the electrode layer 4 respectively, so as to control the conduction of the annular die bonding sub-area circuit respectively.
[0047] Specifically, the electrode layer 4 is provided with the second positive electrode layer and the second negative electrode layer corresponding to the plurality of annular die bonding sub-areas one by one, so as to control the electrical conduction state of the plurality of annular die bonding sub-areas simultaneously or separately through the electrode layer 4.
[0048] Further, an insulating layer can be arranged on the gap between the positive electrode layer and the negative electrode layer, and the insulating layer is used to isolate the positive electrode layer and the negative electrode layer to prevent the positive electrode layer and the negative electrode layer from directly contacting each other to cause short circuit; meanwhile, the insulating layer can also be arranged on the gap between the positive electrode layers (such as between the first positive electrode layer and the second positive electrode layer) and the gap between the negative electrode layers (such as between the first negative electrode layer and the second negative electrode layer).
[0049] In the second embodiment of the present application, an LED module is provided, which includes a first chip, a second chip, and the double die bonding layer LED packaging support of the first embodiment and the embodiments thereof; the first chip is arranged on the central convex die bonding area 2, and the second chip is arranged on the annular die bonding area 3; and the opening and closing of the first chip on the central convex die bonding area 2 and the opening and closing of the second chip on the annular die bonding area 3 can be controlled through the conduction of the electrode layer 4.
[0050] Specifically, the LED module can further include a protective frame arranged above the first chip and / or the second chip to prevent the first chip and the second chip from being damaged. Specifically, the second chip can be a chip of a light strip.
[0051] In addition, a convex lens or a concave lens can be arranged above the first chip and / or the second chip according to actual application requirements, so as to change the light effect.
[0052] In summary, the present application provides a double die attach layer LED packaging support and an LED module. The double die attach layer LED packaging support includes a central convex die attach area and a ring-shaped die attach area, both of which are connected with an electrode layer and can be simultaneously or separately powered on through the electrode layer. Both areas can place chips of LEDs and control the opening and closing of the chips respectively or simultaneously. The ring-shaped die attach area is arranged outside the central convex die attach area, and the chips arranged on the ring-shaped die attach area can be connected with the light emitted by the chips arranged on the central convex die attach area from the outside. In addition, the thickness of the ring-shaped die attach area and the central convex die attach area can be adjusted to change the light path, thereby improving the light emitting range and the uniformity of the light.
[0053] Finally, it should be noted that the above examples are only used to illustrate the technical solutions of the present application, but not to limit them. Although the present application has been described in detail with reference to the foregoing examples, those skilled in the art should understand that they can modify the technical solutions recorded in the foregoing examples, or replace some of the technical features with equivalent ones. These modifications or replacements do not change the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the examples of the present application.
Claims
1. A double-bond layer LED package bracket, characterized in that: include: substrate; A central raised crystal-fixing area is provided on the substrate; an annular crystal-fixing region, sleeved on the outer side of the central raised crystal-fixing region; the thickness of the central raised crystal-fixing region is different from that of the annular crystal-fixing region; An electrode layer is provided on the end surface of the substrate away from the central raised crystal-fixing area; the central raised crystal-fixing area and the annular crystal-fixing area are both connected to the electrode layer.
2. The double-die bond layer LED package bracket according to claim 1, characterized in that: The thickness of the central raised crystal-fixing area is smaller than the thickness of the annular crystal-fixing area; and the thickness of the annular crystal-fixing area decreases gradually in a direction approaching the central raised crystal-fixing area.
3. The double-die bond layer LED package bracket according to claim 2, characterized in that: The intersection of the center lines of the annular crystal-fixing area is located on the center line of the central raised crystal-fixing area.
4. The double-die bond layer LED package bracket according to claim 1, characterized in that: The thickness of the central raised crystal-fixing area is greater than the thickness of the annular crystal-fixing area; and the thickness of the annular crystal-fixing area increases gradually in a direction approaching the central raised crystal-fixing area.
5. The double-die bond layer LED package bracket according to claim 1, characterized in that: The distance between the central raised crystal-fixing area and the annular crystal-fixing area is less than or equal to the width of the annular crystal-fixing area.
6. The double-die bond layer LED package bracket according to claim 1, characterized in that: A first through hole is provided on the substrate at a position corresponding to the central raised solid crystal area, and the electrode layer is connected to the central raised solid crystal area through the first through hole; a second through hole is provided on the substrate at a position corresponding to the annular solid crystal area, and the electrode layer is connected to the annular solid crystal area through the second through hole.
7. The double-die bond layer LED package bracket according to claim 1, characterized in that: The annular crystal-solidifying area includes a plurality of annular crystal-solidifying subareas, and the plurality of annular crystal-solidifying subareas are all connected to the electrode layer.
8. The double-die bond layer LED package bracket according to claim 1, characterized in that: The electrode layer includes a positive electrode layer and a negative electrode layer, and there is a gap between the positive electrode layer and the negative electrode layer; the positive electrode layer includes a first positive electrode layer connected to the central raised solid crystal area and a second positive electrode layer connected to the annular solid crystal area; the negative electrode layer includes a first negative electrode layer connected to the central raised solid crystal area and a second negative electrode layer connected to the annular solid crystal area.
9. The double-die bond layer LED package bracket according to claim 8, characterized in that: An insulating layer is provided on the gap, and the insulating layer is used to isolate the positive electrode layer from the negative electrode layer.
10. An LED module, characterized in that: It comprises a first chip, a second chip and the double-solid-layer LED package bracket according to claim 1; the first chip is arranged in the central raised solid-solid area, and the second chip is arranged in the annular solid-solid area.