Perovskite solar cell
By setting a polycyclic aromatic conjugated polymer buffer layer between the perovskite layer and the passivation layer, the problem of dissolution of the perovskite layer by the passivation layer solvent was solved, thus maintaining the repeatability and overall performance of the perovskite solar cell.
Patent Information
- Application Number
- CN202422773689.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-13
- Publication Date
- 2025-10-17
- Estimated Expiration
- 2034-11-13
AI Technical Summary
In existing perovskite solar cells, the solvent in the passivation layer dissolves the methylamine component in the perovskite layer, resulting in improved charge transport performance but reduced repeatability. Using materials without methylamine components, on the other hand, affects thermal stability.
A buffer layer is placed between the perovskite layer and the passivation layer. The buffer layer material is a polycyclic aromatic conjugated polymer that does not have reactive activation sites, which prevents the solvent of the passivation layer from dissolving the perovskite layer.
This ensures the repeatability of perovskite solar cells without affecting overall performance, avoids the dissolution of the perovskite layer by the passivation layer, and improves the stability and efficiency of the cells.
Smart Images
Figure CN223452360U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The utility model relates to solar cell manufacturing technology field especially relates to a kind of perovskite solar cells. BACKGROUND
[0002] The main structure of the existing perovskite solar cell generally includes substrate, hole transport layer, perovskite layer, electron transport layer and electrode stacked from bottom to top. In order to improve the charge transport defects existing in the perovskite layer prepared by solution method, the prior art uses aniline salt as a passivation material to passivate the surface of the perovskite layer and prepare a passivation layer to improve the overall performance of the perovskite solar cell.
[0003] However, due to the particularity of aniline salt, it can only be dissolved in alcohol solvents such as isopropyl alcohol, and such solvents have a dissolving effect on the methylamine component of the perovskite layer. Although the passivation improves the charge transport performance, it greatly reduces the repeatability of the perovskite solar cell. The current solution is to use a perovskite material without methylamine component, which can avoid the dissolution problem of the passivation layer to the perovskite layer, but the thermal stability is significantly decreased, which still cannot meet the use requirements of the perovskite solar cell. SUMMARY
[0004] Therefore, the utility model embodiment provides a kind of perovskite solar cell, by being arranged between perovskite layer and passivation layer buffer layer, perovskite layer is protected, to avoid the solvent in passivation layer to the dissolution of methylamine component in perovskite layer. Among them, by the material of buffer layer is set to not have the reaction active site polycyclic aromatic conjugated polymer, it is guaranteed that buffer layer will not react with perovskite layer and passivation layer, not only guarantee the repeatability of perovskite solar cell, simultaneously will not affect the overall performance of perovskite solar cell.
[0005] To solve the above technical problems, the utility model provides the following technical scheme:
[0006] In the first aspect, the utility model provides a kind of perovskite solar cell, comprising: substrate, hole transport layer, perovskite layer, passivation layer, electron transport layer and electrode stacked from bottom to top;Further include the buffer layer being arranged between the perovskite layer and the passivation layer;Wherein, the buffer layer is polycyclic aromatic conjugated polymer layer.
[0007] Optionally, the thickness of the buffer layer is 1nm-10nm.
[0008] Optionally, the buffer layer is polybenzene layer, polypyridine layer, polypyrrole layer or poly pyrimidine layer.
[0009] Optionally, the material of the perovskite layer is a perovskite material containing methylamine ions; the material of the passivation layer is an aniline salt.
[0010] Optionally, the material of the perovskite layer is MAPbI3, MAPbI 2.5 Br 0.5 , MAPbI 1.8 Br 1.2 , MAPbI 1.2 Br 1.8 , MAPbI 0.9 Br 2.1 , MAPbBr3, MASnI3, MAPb 0.75 Sn 0.25 I3, MAPb 0.75 Sn 0.25 (I 0.4 Br 0.6 )3, FA 0.75 MA 0.35 PbI3, MASnBr3, FA 0.6 MA 0.4 PbI3, FA 0.4 MA 0.6 PbI3, FA 0.5 MA 0.5 Pb 0.75 Sn 0.25 I3, FA 0.8 MA 0.2 Pb 0.5 Sn 0.5 I3 , FA 0.3 MA 0.7 Pb(I 0.8 Br 0.2 )3, FA 0.1 MA 0.9 Pb(I 0.6 Br 0.4 )3, Cs 0.6 MA 0.4 Pb(I 0.6 Br 0.4 )3, Cs 0.1 MA 0.9 Pb(I 0.6 Br 0.4 )3, Cs 0.1 MA 0.9 PbBr3, Cs 0.1 FA 0.2 MA 0.7 Pb(I 0.85 Br 0.15 )3, Cs 0.05 FA 0.80MA 0.15 Pb(I 0.75 Br 0.25 )3. Cs 0.5 FA 0.4 MA 0.1 Pb(I 0.83 Br 0.17 )3. Cs 0.05 FA 0.79 MA 0.16 Pb(I 0.75 Br 0.25 )3. Cs 0.15 FA 0.65 MA 0.2 Pb(I 0.8 Br 0.2 )3. Cs 0.1 FA 0.5 MA 0.4 PbBr3、Cs 0.15 FA 0.65 MA 0.2 Pb(I 0.8 Br 0.2 )3. Cs 0.05 FA 0.85 MA 0.1 Pb(I 0.755 Br 0.255 )3 or Rb 0.05 Cs 0.05 MA 0.05 FA 0.85 Pb(I 0.95 Br 0.05 )3.
[0011] Optionally, the thickness of the perovskite layer is 100 nm to 1000 nm; and / or the thickness of the passivation layer is 0.5 nm to 10 nm.
[0012] Optionally, the material of the hole transport layer is a self-assembled monolayer material containing a phosphate group, including one of [2-(9H-carbazole-9-yl)ethyl]phosphonic acid, [2-(3,6-dimethoxy-9H-carbazole-9-yl)ethyl]phosphonic acid and [4-(3,6-dimethyl-9H-carbazole-9-yl)butyl]phosphonic acid; and / or, the material of the electron transport layer is one of fullerene or fullerene derivatives.
[0013] Optionally, the hole transport layer 2 has a thickness of 0.5 nm to 10 nm; and / or the electron transport layer 6 has a thickness of 5 nm to 50 nm.
[0014] Optionally, further comprising: a modification layer arranged between the electron transport layer and the electrode; wherein a material of the modification layer comprises one of bathocuproin, lithium fluoride, molybdenum oxide, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline and magnesium fluoride, and / or a thickness of the modification layer is 1nm-20nm.
[0015] In a second aspect, the utility model provides a kind of preparation method of above-mentioned perovskite solar cell, comprising:
[0016] Hole transport layer, perovskite layer, buffer layer, passivation layer, electron transport layer and electrode are sequentially prepared from inside to outside on one side of the thickness direction of base;Or, hole transport layer, perovskite layer, buffer layer, passivation layer, electron transport layer, modification layer and electrode are sequentially prepared from inside to outside on one side of the thickness direction of base.
[0017] Optionally, the preparation step of the buffer layer comprises: dissolving the polycyclic aromatic conjugated polymer using chloroform or chlorobenzene as solvent to obtain a buffer layer solution;The buffer layer solution is coated on the perovskite layer to obtain the buffer layer on the perovskite layer.
[0018] The technical scheme of the first aspect of the above-mentioned utility model has the following advantages or beneficial effects: by arranging a buffer layer between the perovskite layer and the passivation layer, the perovskite layer is protected to avoid the dissolution of the methylamine component in the perovskite layer by the solvent in the passivation layer. By setting the material of the buffer layer as a polycyclic aromatic conjugated polymer without reactive active sites, it is ensured that the buffer layer will not react with the perovskite layer and the passivation layer, which not only ensures the repeatability of the perovskite solar cell, but also does not affect the overall performance of the perovskite solar cell. BRIEF DESCRIPTION OF DRAWINGS
[0019] The accompanying drawings serve to better understand the utility model and do not constitute undue limitation on the utility model. Among them:
[0020] Figure 1 Fig. 1 shows a cross-sectional structure schematic diagram of a perovskite solar cell according to an embodiment of the utility model;
[0021] Figure 2 Fig. 4 is a main flow schematic diagram of preparing a buffer layer according to an embodiment of the utility model;
[0022] Figure 3 Fig. 5 is a main flow schematic diagram of preparing a passivation layer according to an embodiment of the utility model.
[0023] The reference signs are as follows:
[0024] 1-base;2-hole transport layer;3-perovskite layer;4-buffer layer;5-passivation layer;6-electron transport layer;7-modification layer;8-electrode. DETAILED DESCRIPTION
[0025] A solar cell is a photoelectric semiconductor wafer that uses sunlight to generate electricity directly. It is also called a "solar chip" or "photovoltaic cell." As long as it is illuminated by light that meets certain illumination conditions, it can instantly output voltage and generate current in the presence of a circuit. In physics, it is called solar photovoltaic (PV), or simply photovoltaic. In order to conveniently and clearly describe the method for preparing a solar cell and the solar cell of the present invention, the following exemplary embodiments of the present invention are described in conjunction with the accompanying drawings, including various details of the embodiments of the present invention to facilitate understanding. These should be considered merely exemplary. Therefore, those skilled in the art should recognize that various changes and modifications can be made to the embodiments described herein without departing from the scope and spirit of the present invention. Similarly, for the sake of clarity and conciseness, descriptions of well-known functions and structures are omitted in the following description.
[0026] Figure 1 The cross-sectional structure diagram of the perovskite solar cell provided by the embodiment of the present invention is shown in FIG. Figure 1 As shown, the perovskite solar cell provided by the present invention includes a substrate 1, a hole transport layer 2, a perovskite layer 3, a passivation layer 5, an electron transport layer 6 and an electrode 8 stacked from bottom to top; and also includes a buffer layer 4 arranged between the perovskite layer 3 and the passivation layer 5; wherein the buffer layer 4 is a polycyclic aromatic conjugated polymer layer.
[0027] In the prior art, due to the lack of a buffer layer 4, the solvent in the passivation layer 5 will dissolve and destroy the methylamine component in the perovskite layer 3, resulting in a decrease in the overall utilization efficiency of the perovskite solar cell. As the number of uses increases, the methylamine content in the perovskite layer 3 becomes lower and lower, resulting in a decrease in the repeatability of the perovskite solar cell. Therefore, the embodiment of the present invention isolates the passivation layer 5 from the impact of the perovskite layer 3 by providing a buffer layer 4.
[0028] It can be understood that, in order not to cause negative effects on other performances of the perovskite solar cell, the material of the buffer layer 4 added in the embodiment of the utility model needs to be strictly screened and verified. In this regard, the utility model person finds that the polycyclic aromatic conjugated polymer belongs to one of the conjugated conductive polymers, and only contains carbon elements, hydrogen elements and nitrogen elements in the molecule, and the formed film layer structure is dense and uniform, which can effectively block the penetration of the solvent in the passivation layer 5, so as to realize the isolation between the passivation layer 5 and the perovskite layer 3. At the same time, the polycyclic aromatic conjugated polymer does not have a reaction active site, and will not chemically react with any one of the perovskite layer 3 or the passivation layer 5, so it is suitable to be arranged as the buffer layer 4 between the perovskite layer 3 and the passivation layer 5. It can be seen that, according to the selection of the material of the buffer layer 4 in the embodiment of the utility model, it can not only ensure that no reaction occurs with the adjacent materials, but also form a relatively dense layer film layer structure, so that an effective isolation effect can be achieved. Specifically, for the selection of the specific material of the buffer layer 4, the selected polycyclic aromatic conjugated polymer can include one or more of polycyclic aromatic conjugated polymer, polycyclic aromatic conjugated polymer, polycyclic aromatic conjugated polymer, polycyclic aromatic conjugated polymer, and more preferably one of the materials.
[0029] In an alternative embodiment, the thickness of the buffer layer 4 can be set to 1nm~10nm, preferably 2nm~5nm, for example 2nm, 3nm, 4nm, 5nm, etc. For the thickness of the buffer layer 4, if the thickness is too thin, it cannot fully block the penetration of the solvent in the passivation layer 5, and the blocking effect is poor; if the thickness is too thick, it is not conducive to the carrier transmission, which will cause the reduction of the fill factor, thereby affecting the overall performance of the perovskite solar cell, therefore, through many experiments, the thickness of the buffer layer 4 is set to 2nm~5nm in the embodiment of the utility model.
[0030] For the selection of the material of the hole transport layer 2, in an alternative embodiment, the material of the hole transport layer 2 is a self-assembled monolayer material containing a phosphonic group; including one or more of [2-(9H-carbazol-9-yl)ethyl] phosphonic acid, [2-(3,6-dimethoxy-9H-carbazol-9-yl) ethyl] phosphonic acid and [4-(3,6-dimethyl-9H-carbazol-9-yl) butyl] phosphonic acid, and more preferably one of the materials. In the perovskite solar cell, the hole transport layer 2 mainly plays a role in collecting and transporting holes, realizing effective separation of electrons and holes, and protecting the perovskite layer 3 from oxygen and water vapor erosion, so a self-assembled monolayer material containing a phosphonic group needs to be selected to provide sufficient conductive performance.
[0031] In an alternative embodiment, the thickness of the hole transport layer 2 is 0.5 nm to 10 nm, such as 0.5 nm, 1.5 nm, 3 nm, 4.5 nm, 7 nm, 8.5 nm, 10 nm, etc. Among them, with the increase of the thickness of the hole transport layer 2, the thin film grain size and the crystallinity of the perovskite layer 3 will change accordingly, thereby affecting the overall voltage, fill factor and photoelectric conversion efficiency of the perovskite solar cell. It can be understood that when the thickness of the hole transport layer 2 is too large, it will cause poor contact between the anode and the electrolyte, thereby affecting the overall stability of the perovskite solar cell.
[0032] For the perovskite layer 3, in an alternative embodiment, the material of the perovskite layer 3 is a perovskite material containing methylamine ions (CH3NH3 + ), that is, the chemical formula of the perovskite material is ABX3, and the A ion at least includes CH3NH3 + ; more preferably, the A ion includes CH3NH3 + , or CH3NH3 + combined with at least one of (HC(NH)2)2 + , Cs + and Rb + ; the B ion is usually a metal cation, preferably including at least one of Pb 2+ , Sn 2+ and Sr 2+ , and the X ion is usually a halide anion, preferably including at least one of Br - , I - and Cl - .
[0033] In a further alternative embodiment, the material of the perovskite layer 3 is MAPbI3, MAPbI 2.5 Br 0.5 , MAPbI 1.8 Br 1.2 , MAPbI 1.2 Br 1.8 , MAPbI 0.9 Br 2.1 , MAPbBr3, MASnI3, MAPb 0.75 Sn 0.25 I3, MAPb 0.75 Sn 0.25 (I 0.4 Br 0.6 )3, FA 0.75 MA 0.35 PbI3, MASnBr3, FA 0.6 MA 0.4 PbI3, FA 0.4 MA0.6 PbI3, FA 0.5 MA 0.5 Pb 0.75 Sn 0.25 I3, FA 0.8 MA 0.2 Pb 0.5 Sn 0.5 I3 , FA 0.3 MA 0.7 Pb(I 0.8 Br 0.2 )3, FA 0.1 MA 0.9 Pb(I 0.6 Br 0.4 )3, Cs 0.6 MA 0.4 Pb(I 0.6 Br 0.4 )3, Cs 0.1 MA 0.9 Pb(I 0.6 Br 0.4 )3, Cs 0.1 MA 0.9 PbBr3, Cs 0.1 FA 0.2 MA 0.7 Pb(I 0.85 Br 0.15 )3, Cs 0.05 FA 0.80 MA 0.15 Pb(I 0.75 Br 0.25 )3, Cs 0.5 FA 0.4 MA 0.1 Pb(I 0.83 Br 0.17 )3, Cs 0.05 FA 0.79 MA 0.16 Pb(I 0.75 Br 0.25 )3, Cs 0.15 FA 0.65 MA 0.2 Pb(I 0.8 Br 0.2 )3, Cs 0.1 FA 0.5 MA 0.4 PbBr3, Cs 0.15 FA 0.65 MA 0.2 Pb(I 0.8 Br 0.2 )3, Cs 0.05FA 0.85 MA 0.1 Pb(I 0.755 Br 0.255 )3 or Rb 0.05 Cs 0.05 MA 0.05 FA 0.85 Pb(I 0.95 Br 0.05 )3.
[0034] In a further optional embodiment, the perovskite layer 3 has a thickness of 100 nm to 3000 nm, preferably 100 nm to 1000 nm, such as 100 nm, 200 nm, 300 nm, 400 nm, 500 nm, 600 nm, 700 nm, 800 nm, 900 nm, and 1000 nm. For the perovskite layer 3, its thickness directly affects the photoelectric conversion efficiency of the perovskite solar cell. A thicker perovskite layer 3 can absorb more photons, thereby increasing the short-circuit current. However, a perovskite layer 3 that is too thick will result in an increased carrier transport path, increasing the recombination loss, reducing the open-circuit voltage and the fill factor. Therefore, the perovskite layer 3 is set to have a thickness of 100 nm to 1000 nm in the embodiments of the present application, which on the one hand ensures the photoelectric conversion efficiency of the perovskite solar cell, and on the other hand minimizes the recombination loss.
[0035] For the passivation layer 5, in an optional embodiment, the material of the passivation layer 5 is an aniline salt, and the solvent used to prepare the passivation layer 5 is an alcohol solvent. The thickness of the passivation layer is 0.5 nm to 10 nm, such as 0.5 nm, 1.5 nm, 3.0 nm, 4.5 nm, 6.0 nm, 7.5 nm, 9.0 nm, and 10.0 nm. This is the commonly used material and thickness of the passivation layer 5 in the prior art, and is the main reason for the technical problem solved by the present application. Therefore, the present application will not be described in more detail.
[0036] In an alternative embodiment, the provided perovskite solar cell further comprises: a modification layer 7 arranged outside the electron transport layer 6; wherein the material of the electron transport layer 6 is one or more of fullerene or fullerene derivatives (such as fullerene C60, fullerene derivative PCBM, fullerene derivative ICBA, etc.), and more preferably one of the materials; the modification layer 7 comprises one or more of bathocuproine, lithium fluoride, molybdenum oxide, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline and magnesium fluoride, and more preferably one of the materials. Specifically, the electron transport layer 6 can enhance the separation effect of electrons and holes, thereby effectively improving the conversion efficiency of the solar cell, while being able to improve the transmission rate of electrons, reduce the impedance of current, and increase the overall current of the perovskite solar cell. The modification layer 7 can act as an electron blocking layer on the one hand, preventing electrons from flowing back to the electrode from the perovskite layer under light, thereby improving the open-circuit voltage of the device, and on the other hand, reducing the influence of water and oxygen on the performance of the battery, thereby prolonging the service life of the battery.
[0037] In a further alternative embodiment, the thickness of the electron transport layer 6 can be set to 5nm-50nm, such as 5nm, 10nm, 15nm, 25nm, 35nm, 40nm, 50nm, etc. Generally, the greater the thickness of the electron transport layer 6, the lower the electron transport efficiency, but it can also effectively suppress the phenomenon of electron backflow, so the thickness of the electron transport layer 6 is set to 5nm-50nm in the present application, which can balance the injection rate of holes and electrons, thereby improving the current efficiency and light-emitting performance of the perovskite solar cell. In addition, the thickness of the modification layer 7 can be 1nm-20nm in an alternative embodiment, such as 1nm, 5nm, 10nm, 15nm, 20nm, etc.
[0038] For the selection of the material of the electrode 8, in an alternative embodiment, the material of the electrode 8 is generally a metal material, preferably comprising one or more of gold, silver, copper and aluminum, and more preferably one of the materials.
[0039] In a further alternative embodiment, the thickness of the electrode 8 can be set to 10nm-200nm, such as 10nm, 50nm, 100nm, 150nm, 200nm, etc.
[0040] In summary, the perovskite solar cell provided by the embodiments of the present application protects the perovskite layer 3 from the solvent in the passivation layer 5 to avoid the dissolution of the methylamine component in the perovskite layer 3. The material of the buffer layer 4 is a polycyclic aromatic conjugated polymer without reactive active sites, so that the buffer layer 4 cannot react with the perovskite layer 3 and the passivation layer 5, thereby ensuring the repeatability of the perovskite solar cell and not affecting the overall performance of the perovskite solar cell.
[0041] The embodiments provide a preparation method of the perovskite solar cell, which can include the following steps: sequentially preparing, from inside to outside, the hole transport layer 2, the perovskite layer 3, the buffer layer 4, the passivation layer 5, the electron transport layer 6 and the electrode 8 on one side of the substrate 1 in the thickness direction; or sequentially preparing, from inside to outside, the hole transport layer 2, the perovskite layer 3, the buffer layer 4, the passivation layer 5, the electron transport layer 6, the modification layer 7 and the electrode 8 on one side of the substrate 1 in the thickness direction.
[0042] The buffer layer 4 is also formed of a polycyclic aromatic conjugated polymer; the substrate can be made of a common ITO glass material; for the preparation step of the buffer layer 4, as shown in Figure 2 , the preparation process can include the following steps:
[0043] In step S201, a polycyclic aromatic conjugated polymer is dissolved in chloroform or chlorobenzene to obtain a buffer layer solution.
[0044] In step S202, the buffer layer solution is coated on the perovskite layer 3 to obtain the buffer layer 4 on the perovskite layer 3.
[0045] It can be understood that not only the polycyclic aromatic conjugated polymer of the buffer layer 4 itself cannot react with the perovskite layer 3 and the passivation layer 5, but also the solution for dissolving the polycyclic aromatic conjugated polymer in the buffer layer 4 cannot react with the perovskite layer 3 and the passivation layer 5, so as to ensure that the setting of the buffer layer 4 does not affect the overall performance of the perovskite solar cell. Considering the dissolution characteristics of the polymer itself, the present application selects chloroform or chlorobenzene as the solvent to ensure the dissolution amount of the polycyclic aromatic conjugated polymer in the solvent, so as to form a dense and uniform film structure.
[0046] In an alternative embodiment, for the specific preparation process of the passivation layer 5, as shown in Figure 3 , the preparation process can include the following steps:
[0047] In step S301, aniline salt is dissolved in an alcohol solvent to obtain an aniline salt material.
[0048] In step S302, the aniline salt material is spin-coated on the outer side of the buffer layer 4 to form the passivation layer 5.
[0049] In further optional embodiments, after the passivation layer 5 is formed, the electron transport layer 6, the modification layer 7 and the electrode 8 can be formed by evaporation.
[0050] In summary, the preparation method of the perovskite solar cell provided in the embodiments of the present application sets the buffer layer 4 between the perovskite layer 3 and the passivation layer 5, which protects the perovskite layer 3 from the dissolution of the methylamine component in the perovskite layer 3 by the solvent in the passivation layer 5. In this embodiment, the material of the buffer layer 4 is set as a polycyclic aromatic conjugated polymer without reactive active sites, which ensures that the buffer layer 4 will not react with the perovskite layer 3 and the passivation layer 5, thereby ensuring the repeatability of the perovskite solar cell and not affecting the overall performance of the perovskite solar cell.
[0051] Embodiment 1
[0052] Step a: ITO glass is used as the substrate, and a 5-nm hole transport layer ([2-(9H-carbazol-9-yl)ethyl] phosphonic acid) is spin-coated on one side of the substrate in the thickness direction.
[0053] Step b: a perovskite layer is prepared on the outside of the hole transport layer by spin coating, and the components of the perovskite layer are Cs 0.05 FA 0.85 MA 0.1 Pb(I 0.755 Br 0.255 )3, with a thickness of 500 nm.
[0054] Step c: a buffer layer is prepared on the outside of the perovskite layer by spin coating, wherein the components of the buffer layer are polyacenaphthene, the solvent is chlorobenzene, and the thickness of the buffer layer is 1 nm.
[0055] Step d: a passivation layer is prepared on the outside of the buffer layer by spin coating, wherein the passivation layer is made of aniline salt material (PDADI), the solvent is isopropyl alcohol, and the thickness of the passivation layer is 5 nm.
[0056] Step e: an electron transport layer C60 with a thickness of 20 nm, a modification layer BCP with a thickness of 5 nm, and an electrode Ag with a thickness of 100 nm are sequentially evaporated on the outside of the passivation layer.
[0057] Embodiment 2
[0058] Step a: ITO glass is used as the substrate, and a 5-nm hole transport layer ([2-(9H-carbazol-9-yl)ethyl] phosphonic acid) is spin-coated on one side of the substrate in the thickness direction.
[0059] Step b: a perovskite layer is prepared on the outside of the hole transport layer by spin coating, and the components of the perovskite layer are Cs 0.05 FA 0.85 MA0.1 Pb(I 0.755 Br 0.255 )3, thickness of 500 nm;
[0060] Step c, spin-coating a buffer layer outside the perovskite layer, wherein the buffer layer component is polybenzene, the solvent is chlorobenzene, and the thickness is 3 nm;
[0061] Step d, spin-coating a passivation layer outside the buffer layer, wherein the passivation layer uses aniline salt material (PDADI), the solvent is isopropanol, and the thickness is 5 nm;
[0062] Step e, sequentially evaporating an electron transport layer C60 with a thickness of 20 nm, a modification layer BCP with a thickness of 5 nm, and an electrode Ag with a thickness of 100 nm outside the passivation layer.
[0063] Example 3
[0064] Step a, using ITO glass as a substrate, spin-coating a 5 nm hole transport layer ([2-(9H-carbazol-9-yl)ethyl] phosphonic acid) on one side of the substrate in the thickness direction;
[0065] Step b, spin-coating a perovskite layer outside the hole transport layer, wherein the component is Cs 0.05 FA 0.85 MA 0.1 Pb(I 0.755 Br 0.255 )3, thickness of 500 nm;
[0066] Step c, spin-coating a buffer layer outside the perovskite layer, wherein the buffer layer component is polybenzene, the solvent is chlorobenzene, and the thickness is 5 nm;
[0067] Step d, spin-coating a passivation layer outside the buffer layer, wherein the passivation layer uses aniline salt material (PDADI), the solvent is isopropanol, and the thickness is 5 nm;
[0068] Step e, sequentially evaporating an electron transport layer C60 with a thickness of 20 nm, a modification layer BCP with a thickness of 5 nm, and an electrode Ag with a thickness of 100 nm outside the passivation layer.
[0069] Example 4
[0070] Step a, using ITO glass as a substrate, spin-coating a 5 nm hole transport layer ([2-(9H-carbazol-9-yl)ethyl] phosphonic acid) on one side of the substrate in the thickness direction;
[0071] Step b, spin-coating a perovskite layer outside the hole transport layer, wherein the component is Cs 0.05 FA 0.85 MA 0.1 Pb(I0.755 Br 0.255 )3, thickness is 500nm;
[0072] Step c, preparing a buffer layer by spin coating on the outer side of the perovskite layer, wherein the buffer layer component is polyacenaphthene, the solvent is chlorobenzene, and the thickness is 10 nm;
[0073] Step d, preparing a passivation layer by spin coating on the outside of the buffer layer, wherein the passivation layer uses aniline salt material (PDADI), the solvent is isopropyl alcohol, and the thickness is 5 nm;
[0074] Step e: On the outside of the passivation layer, an electron transport layer C60 with a thickness of 20 nm, a modification layer BCP with a thickness of 5 nm, and an electrode Ag with a thickness of 100 nm are sequentially evaporated.
[0075] Example 5
[0076] Step a: using ITO glass as a substrate, spin-coating a 5 nm thick hole transport layer ([2-(9H-carbazol-9-yl)ethyl]phosphonic acid) on one side of the substrate in the thickness direction;
[0077] Step b, using spin coating to prepare a perovskite layer on the outside of the hole transport layer, the component is Rb 0.05 Cs 0.05 MA 0.05 FA 0.85 Pb(I 0.95 Br 0.05 )3, thickness is 500nm;
[0078] Step c, preparing a buffer layer by spin coating on the outer side of the perovskite layer, wherein the buffer layer component is polyacenaphthene, the solvent is chlorobenzene, and the thickness is 3 nm;
[0079] Step d, preparing a passivation layer by spin coating on the outside of the buffer layer, wherein the passivation layer uses aniline salt material (PDADI), the solvent is isopropyl alcohol, and the thickness is 5 nm;
[0080] Step e: On the outside of the passivation layer, an electron transport layer C60 with a thickness of 20 nm, a modification layer BCP with a thickness of 5 nm, and an electrode Ag with a thickness of 100 nm are sequentially evaporated.
[0081] Comparative Example 1
[0082] Step a: using ITO glass as a substrate, spin-coating a 5 nm thick hole transport layer ([2-(9H-carbazol-9-yl)ethyl]phosphonic acid) on one side of the substrate in the thickness direction;
[0083] Step b, using spin coating to prepare a perovskite layer on the outside of the hole transport layer, the component is Cs 0.05 FA 0.85 MA 0.1 Pb(I0.755 Br 0.255 )3, thickness of 500 nm;
[0084] Step c, spin-coating a passivation layer outside the perovskite layer, wherein the passivation layer uses aniline salt material (PDADI), the solvent is isopropanol, and the thickness is 5 nm;
[0085] Step d, sequentially evaporating an electron transport layer C60 with a thickness of 20 nm, a modification layer BCP with a thickness of 5 nm, and an electrode Ag with a thickness of 100 nm outside the passivation layer.
[0086] Comparative Example 2
[0087] Step a, using ITO glass as a substrate, spin-coating a hole transport layer ([2-(9H-carbazol-9-yl)ethyl] phosphonic acid) with a thickness of 5 nm on one side of the substrate in the thickness direction;
[0088] Step b, using a spin-coating method to prepare a perovskite layer outside the hole transport layer, the components are Rb 0.05 Cs 0.05 MA 0.05 FA 0.85 Pb(I 0.95 Br 0.05 )3, thickness of 500 nm;
[0089] Step c, spin-coating a passivation layer outside the perovskite layer, wherein the passivation layer uses aniline salt material (PDADI), the solvent is isopropanol, and the thickness is 5 nm;
[0090] Step d, sequentially evaporating an electron transport layer C60 with a thickness of 20 nm, a modification layer BCP with a thickness of 5 nm, and an electrode Ag with a thickness of 100 nm outside the passivation layer.
[0091] The perovskite solar cells were prepared by the above-mentioned multiple examples and comparative examples, and the performance of the prepared perovskite solar cells was tested, and the results are as follows:
[0092]
[0093] According to the above results, it can be seen that when the thickness of the buffer layer is set to 1 nm, the open circuit voltage Voc, the short circuit current Jsc, the fill factor FF and the photoelectric conversion efficiency PCE of the prepared perovskite solar cell are all lower than those of Example 2 and Example 3, indicating that the thickness of the buffer layer is too thin to fully block the dissolution of the perovskite layer caused by the solvent penetration in the passivation layer, so the performance is slightly weakened. However, compared with Comparative Example 1, the open circuit voltage Voc, the short circuit current Jsc, the fill factor FF and the photoelectric conversion efficiency PCE are all improved, indicating that the buffer layer to some extent blocks the dissolution of the perovskite layer caused by the solvent penetration in the passivation layer, but the blocking effect is poor due to the small thickness, but there is still a significant improvement in performance. Similarly, the performance comparison between Example 5 and Comparative Example 2 can also indicate that the buffer layer provided in the embodiment of the present application can effectively block the dissolution of the perovskite layer caused by the solvent penetration in the passivation layer, and improve the overall performance of the perovskite solar cell.
[0094] The above steps provide an introduction, which is only used to help understand the structure, method and core idea of the present application. For those skilled in the art, without departing from the principles of the present application, the present application can be improved and modified in several ways, and these improvements and modifications also belong to the protection scope of the present application.
Claims
1. A perovskite solar cell, comprising a substrate (1), a hole transport layer (2), a perovskite layer (3), a passivation layer (5), an electron transport layer (6) and an electrode (8) which are arranged in a stack from bottom to top, characterized in that, a buffer layer (4) is further arranged between the perovskite layer (3) and the passivation layer (5); wherein the buffer layer (4) is a polycyclic aromatic conjugated polymer layer.
2. The perovskite solar cell according to claim 1, characterized in that, the thickness of the buffer layer (4) is 1 nm to 10 nm.
3. The perovskite solar cell according to claim 1, characterized in that, the buffer layer (4) is a polyacene layer, a polypyridine layer, a polypyrrine layer or a polypyrimidine layer.
4. The perovskite solar cell according to claim 1, characterized in that, the material of the perovskite layer (3) is a perovskite material containing methylamine ions; the material of the passivation layer (5) is an aniline salt.
5. The perovskite solar cell according to claim 4, characterized in that, The material of the perovskite layer (3) is MAPbI3, MAPbBr3 2.5 Br 0.5 , MAPbI 1.8 Br 1.2 , MAPbI 1.2 Br 1.8 , MAPbI 0.9 Br 2.1 , MAPbBr3, MASnI3, MAPb 0.75 Sn 0.25 I3, MAPb 0.75 Sn 0.25 (I 0.4 Br 0.6 )3, FA 0.75 MA 0.35 PbI3, MASnBr3, FA 0.6 MA 0.4 PbI3, FA 0.4 MA 0.6 PbI3, FA 0.5 MA 0.5 Pb 0.75 Sn 0.25 I3, FA 0.8 MA 0.2 Pb 0.5 Sn 0.5 I3, FA 0.3 MA 0.7 Pb(I 0.8 Br 0.2 )3, FA 0.1 MA 0.9 Pb(I 0.6 Br 0.4 )3, Cs 0.6 MA 0.4 Pb(I 0.6 Br 0.4 )3, Cs 0.1 MA 0.9 Pb(I 0.6 Br 0.4 )3, Cs 0.1 MA 0.9 PbBr3, Cs 0.1 FA 0.2 MA 0.7 Pb(I 0.85 Br 0.15 )3, Cs 0.05 FA 0.80 MA 0.15 Pb(I 0.75 Br 0.25 )3, Cs 0.5 FA 0.4 MA 0.1 Pb(I 0.83 Br 0.17 )3, Cs 0.05 FA 0.79 MA 0.16 Pb(I 0.75 Br 0.25 )3, Cs 0.15 FA 0.65 MA 0.2 Pb(I 0.8 Br 0.2 )3, Cs 0.1 FA 0.5 MA 0.4 PbBr3, Cs 0.15 FA 0.65 MA 0.2 Pb(I 0.8 Br 0.2 )3, Cs 0.05 FA 0.85 MA 0.1 Pb(I 0.755 Br 0.255 )3, or Rb 0.05 Cs 0.05 MA 0.05 FA 0.85 Pb(I 0.95 Br 0.05 )3.
6. The perovskite solar cell according to claim 1, 4 or 5, characterized in that, the thickness of the perovskite layer (3) is 100 nm to 1000 nm; and / or, the thickness of the passivation layer (5) is 0.5 nm to 10 nm.
7. The perovskite solar cell according to claim 1, characterized in that, the material of the hole transport layer (2) is a self-assembled monolayer material containing phosphonic acid groups, including [2-(9H-carbazol-9-yl)ethyl] phosphonic acid, [2-(3,6-dimethoxy-9H-carbazol-9-yl) ethyl] phosphonic acid or [4-(3,6-dimethyl-9H-carbazol-9-yl) butyl] phosphonic acid; and / or, the material of the electron transport layer (6) is one of fullerene or a fullerene derivative.
8. The perovskite solar cell according to claim 1 or 7, characterized in that, the thickness of the hole transport layer (2) is 0.5 nm to 10 nm; and / or, the thickness of the electron transport layer (6) is 5 nm to 50 nm. 9.The perovskite solar cell of claim 1 or 7, characterized in that, further comprising: a modification layer (7) arranged between the electron transport layer (6) and the electrode (8); wherein the material of the modification layer (7) includes one of bathocuproine, lithium fluoride, molybdenum oxide, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline and magnesium fluoride.
10. The perovskite solar cell according to claim 9, characterized in that, the thickness of the modification layer (7) is 1 nm to 20 nm.