Semiconductor device with strip-shaped electrode structure
By adopting a strip electrode structure and an isolation area design in semiconductor devices, the problems of mechanical damage and electrochemical corrosion during the cutting process are solved, and a highly reliable semiconductor device is achieved.
Patent Information
- Application Number
- CN202422479773.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-10-14
- Publication Date
- 2025-10-21
- Estimated Expiration
- 2034-10-14
AI Technical Summary
During the manufacturing process of semiconductor devices, mechanical damage and electrochemical corrosion caused by the cutting process, especially in bidirectional GaN HEMT devices, increase reliability risks due to unstable potential of the substrate.
A strip electrode structure is adopted, including setting source and gate electrodes with different potentials in the active area, and setting metal ring structures and ion implantation areas on the periphery to form an isolation area to isolate the active area from the cutting path, prevent the spread of mechanical damage and optimize the electric field distribution.
The reliability of semiconductor devices is improved, the risk of electrochemical corrosion is reduced, and the stability and voltage resistance of the devices are enhanced.
Smart Images
Figure CN223463253U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The utility model relates to electronic device field, especially a semiconductor device with strip electrode structure. BACKGROUND
[0002] In many semiconductor devices, such as conventional unidirectional voltage-resistant lateral gallium nitride high electron mobility transistor (GaN HEMT) devices, there are three electrodes: source (Source), gate (Gate), and drain (Drain). When the device is off, the Drain electrode is at a high potential, and the Source and Gate electrodes are at a low potential. In bidirectional voltage-resistant bidirectional conduction GaN HEMT devices, there is a common Drain device structure, i.e., the device does not have an actual Drain electrode, but has two Source electrodes (Source1 and Source2) and two Gate electrodes. When the device is in a forward and reverse voltage-resistant state, the two electrodes will take turns as high-voltage and low-voltage electrodes.
[0003] When these semiconductor devices are manufactured, the devices need to be placed on a substrate for manufacturing. For unidirectional GaN HEMT devices, the substrate is generally short-circuited to the Source, short-circuited to the Gate, or floating. Except for the case where the substrate is floating, it can be considered that the substrate is also at a low potential. The working state of bidirectional GaN HEMT devices is more complex, and the substrate cannot be simply short-circuited to a certain electrode to obtain a stable potential. In some applications, the substrate is connected to the midpoint potential of an alternating current to ensure its stability. For the specific working state of bidirectional devices, the midpoint potential of the alternating current can be considered as the midpoint potential of the high-voltage and low-voltage electrodes. For high-voltage GaN HEMT devices, the isolation of high-voltage and low-voltage structures is very important and is a key factor affecting reliability risks.
[0004] When cutting the devices on the substrate, the epitaxial structure of the device at the cutting path is generally etched to expose the substrate, and then cutting is performed. This can reduce the mechanical damage to the edge of the device caused by stress and vibration during cutting. However, mechanical damage will inevitably occur during etching and cutting, which will increase the roughness of the edge of the device and cause material cracks. These mechanical damages may spread to the active region of the device, providing an invasion channel for moisture and contamination, and under the combined action of voltage and other conditions, may cause electrochemical corrosion to further deteriorate the structure of the edge of the device, causing reliability risks.
[0005] In the active region of the unidirectional GaN HEMT device, the Source, Gate and Drain are generally arranged in sequence repeatedly, and the low-potential Source is placed at the edge of the active region, so that each Drain is clamped between two Gates, thereby making the high-voltage Drain away from the scribe lane, and reducing the reliability risk. For the bidirectional GaN HEMT device, because each electrode is in a high-voltage state at a certain working state, it is impossible to isolate the high-voltage end from the scribe lane as in the unidirectional device structure, and there is always a large potential difference between the Source 1 and the scribe lane, and the potential difference is positive and negative, further increasing the reliability risk. Utility model content
[0006] The utility model embodiment provides a kind of semiconductor device with strip electrode structure, realize the high reliability of semiconductor device.
[0007] The utility model embodiment provides a kind of semiconductor device with strip electrode structure, comprising: epitaxial structure, the epitaxial structure is set on substrate, and the epitaxial structure includes active region and the isolation region of active region periphery, wherein:
[0008] The active region includes a plurality of sources and a plurality of gates, and the source and the gate are strip electrodes, and the first source at the uppermost end and the second source at the lowermost end in the active region are electrodes of different potentials.
[0009] Two gates are provided between two adjacent first sources and second sources in the active region.
[0010] The isolation region surrounds the electrodes in the active region, and includes at least one ring of ion implantation region and one ring of metal ring structure, the metal ring structure is spaced apart from the ion implantation region and is provided in the isolation region, and the ion implantation region closest to the electrodes of the active region is the ion implantation region; the metal ring structure is provided on the epitaxial structure, and the ion implantation region is provided in the epitaxial structure.
[0011] Both ends of any gate extend into the first ring of ion implantation region, or both ends of any gate and any source extend into the first ring of ion implantation region.
[0012] It can be seen that the semiconductor device with the strip-shaped electrode structure in the embodiment mainly sets the isolation region at the periphery of the active region of the epitaxial structure, sets the strip-shaped electrode in the active region, sets the first source electrode and the second source electrode with different potentials as the adjacent source electrodes, sets the two gate electrodes between the adjacent first source electrode and the second source electrode, and realizes the bidirectional conduction between the source electrodes, and the uppermost end of the active region is the first source electrode, the lowermost end is the second source electrode, and at least one metal ring structure and at least one ion implantation region are set in the isolation region, so that the active region in the metal ring structure and the ion implantation region can be effectively and reliably improved, thereby realizing the high reliability of the semiconductor device. BRIEF DESCRIPTION OF DRAWINGS
[0013] In order to more clearly illustrate the technical solutions of the embodiments of the present application or the prior art, the following will briefly introduce the drawings needed to be used in the embodiment or the prior art description. Obviously, the drawings in the following description are only some embodiments of the present application, and for those skilled in the art, other drawings can also be obtained without creative labor.
[0014] Figure 1a is a front view of a semiconductor device provided by an embodiment of the present application;
[0015] Figure 1b is a sectional view of a semiconductor device in an embodiment of the present application;
[0016] Figure 1c is a schematic view of a metal ring structure in an embodiment of the present application;
[0017] Figure 2a is a front view of a semiconductor device provided by another embodiment of the present application;
[0018] Figure 2b is a sectional view of a semiconductor device in another embodiment of the present application;
[0019] Figure 3a is a front view of a semiconductor device provided by another embodiment of the present application;
[0020] Figure 3b is a sectional view of a semiconductor device in another embodiment of the present application;
[0021] Figure 4a is a front view of a semiconductor device provided by another embodiment of the present application;
[0022] Figure 4b is a sectional view of a semiconductor device in another embodiment of the present application;
[0023] Figure 5is a cross-sectional view of a semiconductor device in another embodiment of the present invention;
[0024] Figure 6a This is a front view of a semiconductor device provided by another embodiment of the present utility model;
[0025] Figure 6b It is a cross-sectional view of a semiconductor device in another embodiment of the present invention. DETAILED DESCRIPTION
[0026] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the embodiments described are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.
[0027] The terms "first", "second", "third", "fourth" and so on (if any) in the description and claims of the present utility model and the above-mentioned drawings are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence.
[0028] The present invention provides a semiconductor device with a strip electrode structure, such as a bidirectional voltage-resistant bidirectionally conductive GaN HEMT device, etc. Figure 1a A front view of the semiconductor device shown, and Figure 1b The semiconductor device shown is arranged along the Figure 1a As shown in the dashed cross-sectional view, the semiconductor device in this embodiment may include: an epitaxial structure 12, the epitaxial structure 12 is disposed on a substrate 13, and the epitaxial structure 12 includes an active region 10 and an isolation region 11 outside the active region 10, wherein:
[0029] The active area 10 includes multiple sources and multiple gates in the semiconductor device. Each source and gate is a strip electrode. The uppermost first source Source1 and the lowermost second source Source2 in the active area 10 are electrodes with different potentials.
[0030] The first source Source1 and the second source Source2 in the active region 10 are electrodes with different potentials, and two gates are arranged between the adjacent sources. When the semiconductor device is turned on, the two gates are turned on, and the bidirectional conduction of the semiconductor device can be realized. When the semiconductor device is turned off, the second gate Gate2 of the two gates is turned off when the first source Source1 is at a high potential and the second source Source2 is at a low potential, so that the active region 10 between the first source Source1 and the second gate Gate2 bears the high voltage in the off state; when the first source Source1 is at a low potential and the second source Source2 is at a high potential, the first gate Gate1 of the two gates is turned off, so that the active region 10 between the second source Source2 and the first gate Gate1 bears the high voltage in the off state, so that the semiconductor device can be turned off.
[0031] As shown in Figure 1a , the electrodes in the active region 10 are strip-shaped, and are repeatedly arranged in the order of one source (Source1 or Source2) and two gates (Gate1 and Gate2), Figure 1a The strip filled with oblique lines represents the source, and the strip filled with dots represents the gate. Among them, the first source Source1 and the second source Source2 are electrodes with different potentials. For example, the first source Source1 is at a high potential, and the second source Source2 is at a low potential. The first source Source1 is at a low potential, and the second source Source2 is at a high potential.
[0032] In specific implementation, field plates can be respectively arranged above the two gates (Gate1 and Gate2), which can be metal sheets, so that the electric field distribution between the two gates is uniform.
[0033] The isolation region 11 surrounds the electrodes in the active region 10, including at least one circle of ion implantation area 110 and at least one circle of metal ring structure 111. The metal ring structure 111 is arranged in the isolation region 11 and is spaced apart from the ion implantation area 110, and the closest to the electrodes of the active region 10 is a circle of ion implantation area 110. That is, the ion implantation area 110 is arranged near the active region 10, the metal ring structure 111 is arranged outside the ion implantation area 110, and the ion implantation area 110 can also be arranged outside the metal ring structure 111.
[0034] As shown in Figure 1a , the isolation region 11 includes a circle of ion implantation area 110 and a circle of metal ring structure 111, and the circle of metal ring structure 111 is arranged outside the circle of ion implantation area 110.
[0035] It should be noted that, as shown in Figure 1b Any one of the metal ring structure 111 in the active region 10 and the isolation region 11 is disposed on the epitaxial structure 12 of the semiconductor device, and any one of the ion implantation region 110 in the isolation region 11 is disposed in the epitaxial structure 12, which is mainly formed by implanting ions into the epitaxial structure 12.
[0036] Thus, the two ends of any one of the gates (Gate1 or Gate2), i.e. the two ends of the strip electrode, can extend from the epitaxial structure 12 to the innermost ion implantation region 110 in the active region 10, i.e. the ion implantation region 110 closest to the electrode. Alternatively, the two ends of any one of the gates (Gate1 or Gate2) and any one of the sources can extend from the epitaxial structure 12 to the innermost ion implantation region 110, respectively.
[0037] In the specific implementation process, the metal ring structure 111 can include a metal ring formed by one or more metal structures, such as an ohmic metal ring, etc., as shown in Figure 1c The metal ring structure 111 includes an ohmic metal ring and at least one metal structure disposed thereon (for example, two metal structures metal1 and metal2 are taken as an example in Figure 1c ), and the metal ring structure 111 can also have other structures as long as it forms a ring, and is not limited to the structure shown in Figure 1c , which will not be described here. In this way, the metal ring structure 111 is connected with the two-dimensional electron gas below, and the two-dimensional electron gas of the innermost ion implantation region 110 is destroyed by the ion implantation structure to form a high-resistance region.
[0038] In addition, it should be noted that, in the process of manufacturing the semiconductor device in the embodiment, the active region 10 and the isolation region 11 of the semiconductor device are disposed on a region of the epitaxial structure of the substrate 13, and the substrate 13 and the epitaxial structure 12 of the region are cut to obtain the semiconductor device. In this way, in this manufacturing process, the metal ring structure 111 of the isolation region 11 can interrupt the continuity of the medium, prevent the mechanical damage of cutting from spreading to the active region 10, and thus prevent the leakage channel of the electrode in the substrate 13 and the active region 10 from causing breakdown.
[0039] If the semiconductor device in the embodiment is applied to a GaN HEMT, it is easy to implement, can be compatible with the existing GaN HEMT process, does not need to increase the mask and process steps, and can be applied to various GaN HEMT devices, including but not limited to P-GaN HEMT, MIS-HEMT, SBD-Gate HEMT, etc.; and can also be applied to devices of different materials, including but not limited to silicon, silicon carbide, gallium arsenide, gallium oxide, etc.
[0040] Thus, in the process of manufacturing the semiconductor device:
[0041] The metal ring structure 111 is a floating structure, not connected to any electrode in the active region 10, and its upper end is close to the first source electrode Source 1 at the upper end of the active region 10 and its lower end is close to the second source electrode Source 2 at the lower end of the active region 10, so that the metal ring structure 111 induces an intermediate potential between the first source electrode Source 1 and the second source electrode Source 2, and the maximum value of the induced potential is about Vdd / 2, regardless of the state of the first source electrode Source 1 and the second source electrode Source 2, so that the presence of the metal ring structure 111 can effectively prevent the electrochemical corrosion of the chip edge caused by the large difference between the source voltage and the substrate voltage.
[0042] The two-dimensional electron gas region below the metal ring structure 111 is at the same potential as the metal ring structure 111, and because the two-dimensional electron gas region is in a low resistance state, there is no voltage difference between different positions in the region. The voltage difference between the metal ring structure 111 and the scribe lane of the epitaxial structure 12 on the substrate 13 is mainly borne by the edge of the scribe lane, so that electrochemical corrosion only occurs at the edge of the scribe lane and does not further spread to the active region 10.
[0043] The potential induced by the metal ring structure 111 is close to the applied potential of the substrate 13, and the potential difference is much smaller than the potential difference between the high voltage electrode in the active region 10 and the substrate 13, greatly reducing the possibility of electrochemical corrosion at the edge of the semiconductor device, and playing a role in isolating the high voltage electrode and the substrate 13.
[0044] For example Figure 1b As shown, if the potential of the first source electrode Source 1 in the active region 10 is 650V, the potential of the second source electrode Source 1 is 0V, and the potential of the substrate 13 is the middle potential 325V, then the potential induced by the metal ring structure 111 is also about 325V, and the potential difference between the metal ring structure 111 and the substrate 13 is about 0V.
[0045] For the metal ring structure 111 and the first source electrode Source 1 at the upper end of the active region 10 and the second source electrode Source 2 at the lower end of the active region 10, there is at most a voltage difference of about Vdd / 2, which is borne by the high-resistance ion implantation region 110 in the inner ring of the isolation region 11 and the dielectric between the metal ring structure 111 and the active region 10. Since the metal ring structure 111 isolates the scribe damage and the intrusion of water vapor, the internal region of the metal ring structure 111 has high reliability.
[0046] For the left and right endpoints of the electrodes Source1 / Source2 / Gate1 / Gate2 of the active area 10, since their voltages alternate between high and low, most of the electric field lines can terminate at each other, which can prevent a large number of electric field lines from overflowing outside the active area 10. Compared with the upper and lower parts of the active area 10, the reliability is higher.
[0047] By combining the above functions, the reliability of both the inner and outer regions of the isolation region 11 is effectively improved, ultimately achieving overall high reliability of the semiconductor device.
[0048] It can be seen that the semiconductor device with a strip electrode structure in this embodiment mainly sets an isolation area around the active area of the epitaxial structure, and a strip electrode is set in the active area. The adjacent sources are the first source and the second source with different potentials, and two gates are set between the adjacent first source and the second source to achieve bidirectional conduction and shutdown between the sources. The uppermost end of the active area is the first source, and the lowermost end is the second source. At least one circle of metal ring structure and at least one ion implantation area are set in the isolation area. In this way, the reliability of the active area therein can be effectively improved through the metal ring structure and the ion implantation area, thereby achieving high reliability of the semiconductor device.
[0049] Another embodiment of the present invention provides a semiconductor device with a strip electrode structure, such as a bidirectional voltage-resistant bidirectionally conductive GaN HEMT device, etc. Figure 2a A front view of the semiconductor device shown, and Figure 2b The semiconductor device shown is arranged along the Figure 2a The cross-sectional view shown in dashed lines shows that the semiconductor device in this embodiment is different from the above-mentioned Figure 1a The semiconductor device shown is similar to the one shown in FIG. 1 , except that the semiconductor device of this embodiment is provided with a circle of ion implantation region 110 outside the metal ring structure 111 of the isolation region 11. Specifically, in the semiconductor device of this embodiment:
[0050] The isolation region 11 includes two circles of ion implantation regions 110 and a circle of metal ring structures 111 . The circle of metal ring structures 111 is disposed between the two circles of ion implantation regions 110 .
[0051] As a result, the two-dimensional electron gas region beneath the metal ring structure 111 is at the same potential as the metal ring structure 111. Because the two-dimensional electron gas region is in a low-resistance state, no voltage difference occurs between different locations within the region. The voltage difference between the metal ring structure 111 and the scribe lines of the epitaxial structure 12 on the counter substrate 13 is primarily borne by the high-resistance peripheral ion implantation region 110 and the scribe line edges. This limits electrochemical corrosion to the peripheral ion implantation region 110 and the scribe line edges, preventing further spread to the active area 10.
[0052] Compared with the above Figure 1aIn the semiconductor device shown, a circle of ion implantation area 110 is provided between the cutting path and the metal ring structure 111, which controls the scope of electrochemical corrosion to the peripheral ion implantation area, prevents electrochemical corrosion from invading the interior of the chip, and eliminates the risk of electrochemical corrosion, thereby further enhancing the reliability of the semiconductor device.
[0053] Another embodiment of the present invention provides a semiconductor device with a strip electrode structure, such as a bidirectional voltage-resistant bidirectionally conductive GaN HEMT device, etc. Figure 3a A front view of the semiconductor device shown, and Figure 3b The semiconductor device shown is arranged along the Figure 3a The cross-sectional view shown in dashed lines shows that the semiconductor device in this embodiment is different from the above-mentioned Figure 2a The semiconductor device shown in FIG. 1 is similar to the semiconductor device shown in FIG. 1 , except that, in the semiconductor device of this embodiment, gates Gate1 and Gate2 are provided respectively in addition to the first source electrode Source1 and the second source electrode Source2 at the upper end of the active region 10 . In the semiconductor device of this embodiment:
[0054] The top electrodes in the active area 10 are the first gate Gate1 and the first source Source1 , and the bottom electrodes in the active area 10 are the second source Source2 and the second gate Gate2 . A field plate is provided above the first gate and a field plate is provided above the second gate.
[0055] In this embodiment, the electric field in the active area 10 is optimized by the field plate so that the electric field distribution is uniform. This can further optimize the electric field distribution between the metal ring structure 111 and the first source Source1 at the upper end and the second source Source2 at the lower end of the active area 10, thereby reducing the breakdown risk and improving reliability.
[0056] Another embodiment of the present invention provides a semiconductor device with a strip electrode structure, such as a bidirectional voltage-resistant bidirectionally conductive GaN HEMT device, etc. Figure 4a A front view of the semiconductor device shown, and Figure 4b The semiconductor device shown is arranged along the Figure 4a The cross-sectional view shown in dashed lines shows that the semiconductor device in this embodiment is different from the above-mentioned Figure 2a The semiconductor device shown is similar to the one shown in FIG. 1 , except that the metal ring structure 111 in the isolation region 11 of the semiconductor device of this embodiment needs to be connected to the substrate 13 of the semiconductor device. In the semiconductor device of this embodiment:
[0057] The metal ring structure 111 is connected with the substrate 13 through a through hole on the epitaxial structure 12. Generally, in the process of manufacturing the semiconductor device, the epitaxial structure 12 of the semiconductor device is arranged on the substrate 13, then a TGV process is performed to arrange a GaN through hole (TGV) on the epitaxial structure 12, and then the metal ring structure 111 is connected with the substrate 13 through the TGV.
[0058] In this way, the potential of the metal ring structure 111 is the same as that of the substrate 13, and the reliability risk caused by the voltage difference between the cutting path and the metal ring structure 111 is completely avoided. In this scheme, the substrate 13 can not be additionally connected with a bias voltage, and the potential induced by the metal ring structure 111 will not bring new reliability risk; or the bias voltage can be connected with the substrate 13 to forcibly set the potential of the metal ring structure 111 at a specific value.
[0059] It can be understood that in other specific embodiments, the metal ring structure 111 can be connected with the substrate 13 through external packaging wires and internal metal interconnections of the chip. Specifically, in the process of manufacturing the semiconductor device, the epitaxial structure 12 is arranged on the substrate 13, and the metal ring structure 111 is connected with the substrate 13 through the packaging wires and the internal metal interconnections of the chip.
[0060] In this way, the same effect as the semiconductor device shown in Figure 4a can be achieved without the TGV process, although the TGV process step is not additionally required, but it is constrained by the area of the semiconductor device (because the surface of the semiconductor device needs to be increased by the wire Pad, and the semiconductor device with smaller area can be difficult to implement).
[0061] Another embodiment of the utility model provides a semiconductor device with a strip-shaped electrode structure, such as a bidirectional voltage-resistant bidirectional conduction GaN HEMT device, and the front view of the semiconductor device is as shown in Figure 2a , the semiconductor device is along the cross-sectional view of the dotted line as shown in Figure 2a , and the cross-sectional view of the semiconductor device is as shown in Figure 5 . The semiconductor device in the embodiment is similar to the semiconductor device shown in Figure 2b , and the difference is that, in the semiconductor device of the embodiment, the metal ring structure 111 is connected with the substrate 13 through the packaging wires and the internal metal interconnections of the chip.
[0062] A field plate is arranged on the metal ring structure 111, which can be connected with the metal ring structure 111 or can be a floating field plate, as shown in Figure 5 . The field plate can be arranged between the metal ring structure 111 and the cutting path, or can be arranged between the metal ring structure 111 and the active region 10, or both sides can be arranged, as shown in Figure 5 . The field plate is arranged on both sides.
[0063] By increasing the field plate, the electric field distribution between the metal ring structure 111 and the active region 10 and the scribe lane can be optimized, the electric field peak can be reduced, and the reliability of the semiconductor device can be increased.
[0064] The utility model discloses a semiconductor device with strip electrode structure, such as bidirectional voltage resistance bidirectional conduction GaN HEMT device etc., the front view of semiconductor device is as shown in Figure 6a The sectional view along the dotted line as shown in Figure 6a The sectional view along the dotted line as shown in Figure 6b Figure 6a In the middle, a circle of metal ring structure 111 is indicated with white circle, and two circles of ion implantation region 110 are indicated with black circle, the semiconductor device in the embodiment is similar to the semiconductor device shown in the above Figure 2b The semiconductor device in the embodiment is similar to the semiconductor device shown in the above
[0065] If the isolation region 110 includes two circles of ion implantation region 110, the two circles of ion implantation region 110 are connected into a whole in the epitaxial structure 12, and in the above other embodiments, the two circles of ion implantation region 110 are completely isolated in the epitaxial structure 12.
[0066] Connecting the ion implantation region 110 into a whole has slightly weak inhibition effect on electrochemical corrosion, but still can make the semiconductor device have higher reliability. However, if the scheme of short-circuiting the metal ring structure 111 and the substrate 13 through TGV or packaging wire is combined with the scheme of connecting the ion implantation region 110 into a whole in the embodiment, the possibility of electrochemical corrosion can also be greatly reduced.
[0067] It should be noted that the metal ring structure 111 of the semiconductor device in the above embodiment is connected with the epitaxial structure 12 of the semiconductor device, and in other specific embodiments, the metal ring structure 111 can not be connected with the two-dimensional electron gas or the epitaxial layer below, that is, there can be an insulating medium layer between the metal ring structure 111 and the epitaxial structure 12. In this way, the inhibition effect on electrochemical corrosion is slightly weak, but the semiconductor device still has high reliability. However, if the scheme of short-circuiting the metal ring structure 111 and the substrate 13 through TGV or packaging wire is combined, the possibility of electrochemical corrosion can also be greatly reduced.
[0068] The above has carried out the detailed introduction to the semiconductor device provided by the embodiment of the utility model, the principle and implementation mode of the utility model have been described in this paper by applying specific examples, the above embodiment is only used for helping understanding the method and its core idea of the utility model; simultaneously, for the general technical personnel of the field, according to the idea of the utility model, there will be changes in specific implementation mode and application range, and the above is described, the content of the specification should not be understood as the limitation of the utility model.
Claims
1. A semiconductor device having a strip electrode structure, characterized in that: The semiconductor device comprises: an epitaxial structure disposed on a substrate, the epitaxial structure comprising an active region and an isolation region surrounding the active region, wherein: the active region comprises a plurality of sources and a plurality of gates, the sources and gates are all strip electrodes, the uppermost first source and the lowermost second source in the active region are electrodes of different potentials; two gates are disposed between two adjacent first source and second source in the active region; the isolation region surrounds the electrodes in the active region, comprising at least one ring of ion implantation region and one ring of metal ring structure, the metal ring structure is disposed in the isolation region apart from the ion implantation region, and the ion implantation region closest to the electrodes in the active region; the metal ring structure is disposed on the epitaxial structure, and the ion implantation region is disposed in the epitaxial structure; the two ends of any gate extend into the first ring of ion implantation region; or, the two ends of any gate and any source respectively extend into the first ring of ion implantation region.
2. The semiconductor device of claim 1, wherein, The uppermost electrodes in the active region are the first gate and the first source in sequence, and the lowermost electrodes in the active region are the second gate and the second source in sequence; a field plate is disposed above the first gate, and a field plate is disposed above the second gate.
3. The semiconductor device according to any one of claims 1 and 2, wherein The isolation region comprises one ring of ion implantation region and one ring of metal ring structure, and the one ring of metal ring structure is disposed outside the one ring of ion implantation region.
4. The semiconductor device according to any one of claims 1 and 2, wherein The isolation region comprises two rings of ion implantation region and one ring of metal ring structure, and the one ring of metal ring structure is disposed between the two rings of ion implantation region.
5. The semiconductor device of claim 4, wherein, The two rings of ion implantation region are completely isolated in the epitaxial structure, or the two rings of ion implantation region are connected as a whole in the epitaxial structure.
6. The semiconductor device of claim 5, wherein, The metal ring structure is connected to the substrate through a via hole on the epitaxial structure, or the metal ring structure is connected to the substrate through an external packaging wire.
7. The semiconductor device of any one of claims 1 and 2, wherein, The metal ring structure comprises a metal ring formed by one or more layers of metal structure.
8. The semiconductor device of claim 7, wherein, A field plate is disposed on the metal ring structure.
9. The semiconductor device of claim 1, wherein, The semiconductor device includes but is not limited to P-GaN HEMT, MIS-HEMT, and SBD-Gate HEMT.