Solar cell, photovoltaic device, power utilization device and power generation device

Abstract

The utility model discloses a solar cell, a photovoltaic device, a power utilization device and a power generation device.The solar cell comprises a first electrode layer, a functional layer and a second electrode layer which are sequentially arranged on a substrate in a stacked mode, and the second electrode layer comprises a first conductive layer, a second conductive layer and a third conductive layer which are sequentially arranged in a stacked mode; the first conductive layer and the third conductive layer comprise indium tin oxide, and the second conductive layer comprises indium zinc oxide; wherein the first conductive layer is located on one side of the second conductive layer facing the functional layer, and the third conductive layer is located on one side of the second conductive layer away from the functional layer. The first conducting layer and the third conducting layer are arranged on the two sides, close to and away from the functional layer, of the second conducting layer in the second electrode layer respectively, the second conducting layer comprises indium zinc oxide, and the first conducting layer and the third conducting layer comprise indium tin oxide. The arrangement mode of the second electrode layer is beneficial for improving the photoelectric conversion efficiency of the solar cell, and meanwhile, the stability of the solar cell is improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of solar cells, in particular to a solar cell, a photovoltaic device, an electric device and a power generation device. BACKGROUND

[0002] As the third generation of solar cells, perovskite solar cells use perovskite material as light-absorbing layer material, and have significant performance advantages such as high light absorption coefficient, carrier mobility, direct and controllable optical band gap. The second electrode layer in the perovskite solar cell allows light to penetrate the cell better, which can improve the utilization of light and thus improve the photoelectric conversion efficiency of the perovskite solar cell. However, the material selection of the second electrode layer directly affects the photoelectric conversion efficiency and stability of the cell. UTILITY MODEL CONTENT

[0003] In view of the above technical problems, the present application provides a solar cell, a photovoltaic device, an electric device and a power generation device to improve the photoelectric conversion efficiency and stability of the solar cell.

[0004] The first technical solution adopted by the present application is to provide a solar cell, which comprises a first electrode layer, a functional layer and a second electrode layer stacked in sequence on a substrate, the second electrode layer comprises a first conductive layer, a second conductive layer and a third conductive layer stacked in sequence, wherein the first conductive layer and the third conductive layer comprise indium tin oxide, and the second conductive layer comprises indium zinc oxide; wherein the first conductive layer is located on the side of the second conductive layer facing the functional layer, and the third conductive layer is located on the side of the second conductive layer away from the functional layer.

[0005] In the technical solution of the present application, the second electrode layer comprises a first conductive layer, a second conductive layer and a third conductive layer stacked in sequence, wherein the first conductive layer is located on the side close to the functional layer, the first conductive layer comprises indium tin oxide and has good electrical properties, which is conducive to current transmission and thus improves the electrical conductivity; the second conductive layer is the main layer of the second electrode layer, the second conductive layer comprises indium zinc oxide, has low parasitic absorption and high electron mobility, which is conducive to reducing the resistance of the second electrode layer and improving the carrier collection efficiency of the solar cell, thereby helping to improve the photoelectric conversion efficiency of the solar cell; the third conductive layer is located on the side away from the functional layer, and the third conductive layer comprises indium tin oxide, which has high transparency and is not easily eroded by water vapor in the air when in contact with the air side, and has high stability. The arrangement of the second electrode layer in this embodiment is conducive to improving the photoelectric conversion efficiency of the solar cell and at the same time improving the stability of the solar cell.

[0006] In addition, since the process for directly preparing the indium tin oxide on the functional layer has low complexity and good film layer quality, the process for directly preparing the indium zinc oxide on the functional layer has high complexity and poor film layer quality, and since the indium zinc oxide and the indium tin oxide have certain similarity in crystal structure, the indium tin oxide layer is first formed on the functional layer, the indium tin oxide is used as a growth seed layer for growing the indium zinc oxide, the film layer quality of the indium zinc oxide layer is good, the process complexity is reduced, and the indium tin oxide layer provided on the side of the indium zinc oxide layer away from the functional layer can reduce the contact of the indium zinc oxide with air and provide stability of the solar cell.

[0007] In some embodiments, the thickness of the first conductive layer is 5-15 nm.

[0008] In the technical scheme of the embodiments of the present application, the thickness of the first conductive layer is in the above range, the second electrode layer can have good conductivity, and thus the photoelectric conversion efficiency of the solar cell is improved.

[0009] In some embodiments, the thickness of the first conductive layer is 5-10 nm.

[0010] In the technical scheme of the embodiments of the present application, the thickness of the first conductive layer is in the above range, the second electrode layer can have good conductivity, and thus the photoelectric conversion efficiency of the solar cell is improved.

[0011] In some embodiments, the thickness of the second conductive layer is 20-40 nm.

[0012] In the technical scheme of the embodiments of the present application, the thickness of the second conductive layer is in the above range, the parasitic absorption is low, the electron mobility is high, the resistance of the second electrode layer is reduced, the energy collection efficiency of the solar cell is improved, and thus the photoelectric conversion efficiency of the solar cell is improved.

[0013] In some embodiments, the thickness of the second conductive layer is 30-40 nm.

[0014] In the technical scheme of the embodiments of the present application, the thickness of the second conductive layer is in the above range, the parasitic absorption is low, the electron mobility is high, the resistance of the second electrode layer is reduced, the energy collection efficiency of the solar cell is improved, and thus the photoelectric conversion efficiency of the solar cell is improved.

[0015] In some embodiments, the thickness of the third conductive layer is 5-30 nm.

[0016] In the technical scheme of the embodiment of the present application, the third conductive layer has a thickness within the above range, has high transparency, and better insulates the indium zinc oxide of the second conductive layer from water and oxygen, so that the indium zinc oxide of the second conductive layer is less likely to be eroded by water and oxygen in the air, the stability of the indium zinc oxide of the second conductive layer is increased, and thus the stability of the solar cell is improved.

[0017] In some embodiments, the third conductive layer has a thickness of 5 nm to 10 nm.

[0018] In the technical scheme of the embodiment of the present application, the third conductive layer has a thickness within the above range, has high transparency, and better insulates the indium zinc oxide of the second conductive layer from water and oxygen, so that the indium zinc oxide of the second conductive layer is less likely to be eroded by water and oxygen in the air, the stability of the indium zinc oxide of the second conductive layer is increased, and thus the stability of the solar cell is improved.

[0019] In some embodiments, the side of the substrate of the solar cell on which the light enters is the light-in side, the surface of the first conductive layer facing the second conductive layer has a microstructure, and the microstructure includes at least one of a recess and a groove on the surface of the first conductive layer.

[0020] In the technical scheme of the embodiment of the present application, the microstructure is arranged to reflect the light entering the solar cell from the light-in side of the solar cell, thereby increasing the light utilization rate of the solar cell. Meanwhile, the microstructure is arranged on the surface of the first conductive layer facing the second conductive layer, thereby increasing the contact area between the first conductive layer and the second conductive layer, the electrical conduction efficiency, and the film layer bonding strength between the first conductive layer and the second conductive layer, and improving the structural stability.

[0021] In some embodiments, the second conductive layer is located within the outline of the first conductive layer in the orthogonal projection of the solar cell along the thickness direction of the solar cell, the side surface of the second conductive layer and the surface of the first conductive layer facing the second conductive layer form a stepped region, the third conductive layer includes a first part and a second part, the first part is located on the surface of the second conductive layer away from the first conductive layer, and the second part is located in the stepped region and covers at least part of the side surface of the second conductive layer.

[0022] In the technical scheme of the embodiment of the present application, the first conductive layer is located in the contour of the second conductive layer, so that a step region is formed between the side surface of the second conductive layer and the surface of the first conductive layer facing the second conductive layer, the first part of the third conductive layer covers the surface of the second conductive layer away from the first conductive layer, and the second part is located in the step region and covers at least part of the side surface of the second conductive layer, so that the first conductive layer and the third conductive layer form a partial or full covering effect on the second conductive layer, and the indium zinc oxide of the second conductive layer is better isolated from water and oxygen in the air, so that the indium zinc oxide of the second conductive layer is less likely to be eroded by water and oxygen in the air, the stability of the indium zinc oxide of the second conductive layer is improved, and the stability of the solar cell is improved.

[0023] In some embodiments, the sheet resistance of the first conductive layer is 10Ω / sq-15Ω / sq.

[0024] In the technical scheme of the embodiment of the present application, the sheet resistance of the first conductive layer is in the above range, which can promote light energy and improve the photoelectric conversion efficiency of the solar cell.

[0025] In some embodiments, the sheet resistance of the second conductive layer is 40Ω / sq-45Ω / sq.

[0026] In the technical scheme of the embodiment of the present application, the sheet resistance of the second conductive layer is in the above range, which can effectively collect and transmit photo-generated current and improve the photoelectric conversion efficiency of the solar cell.

[0027] In some embodiments, the sheet resistance of the third conductive layer is 10Ω / sq-15Ω / sq.

[0028] In the technical scheme of the embodiment of the present application, the sheet resistance of the third conductive layer is in the above range, which has high conductivity and can improve the photoelectric conversion efficiency of the solar cell.

[0029] In some embodiments, the conductivity of the first conductive layer, the second conductive layer and the third conductive layer is 1×10 5 S / m-10×10 5 S / m.

[0030] In the technical scheme of the embodiment of the present application, the conductivity of the first conductive layer, the second conductive layer and the third conductive layer is in the above range, which has high conductivity and can improve the photoelectric conversion efficiency of the solar cell.

[0031] In some embodiments, the functional layer includes a perovskite layer, an electron transport layer arranged on one side of the perovskite layer along the thickness direction of the functional layer, and / or a hole transport layer arranged on the other side of the perovskite layer along the thickness direction of the functional layer.

[0032] The second technical solution adopted by the present application is to provide a photovoltaic device comprising the solar cell as described above.

[0033] The third technical solution adopted by the present application is to provide an electric device comprising the solar cell as described above.

[0034] Since the device of the present application comprises the solar cell provided by the present application, it has at least the same advantages as the solar cell.

[0035] The fourth technical solution adopted by the present application is to provide a solar cell comprising the solar cell as described above.

[0036] Since the device of the present application comprises the solar cell provided by the present application, it has at least the same advantages as the solar cell.

[0037] The above description is only a summary of the technical solutions of the present application. In order to enable one skilled in the art to better understand the technical means of the present application, the specific embodiments of the present application are described in accordance with the content of the description, and in order to make the above and other purposes, features and advantages of the present application more obvious and easy to understand, the following specific embodiments of the present application are described. BRIEF DESCRIPTION OF DRAWINGS

[0038] Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The accompanying drawings are included to provide a description of the preferred embodiments, and are not meant to limit the present application. Moreover, the same reference numerals in all the drawings represent the same or similar elements. In the drawings:

[0039] Figure 1 Structure diagram of the solar cell of an embodiment of the present application;

[0040] Figure 2 Structure diagram of the solar cell of an embodiment of the present application;

[0041] Figure 3 Structure diagram of the solar cell of an embodiment of the present application;

[0042] Figure 4 Structure diagram of the solar cell of an embodiment of the present application;

[0043] Figure 5 Structure diagram of the solar cell of an embodiment of the present application;

[0044] Figure 6 Structure diagram of the solar cell of an embodiment of the present application;

[0045] Figure 7 Structure diagram of the photovoltaic device of an embodiment of the present application;

[0046] Figure 8 Structure diagram of a power consuming device according to an embodiment of the present application;

[0047] Figure 9 Structure diagram of a power generating device according to an embodiment of the present application.

[0048] Marking description:

[0049] Solar cell 100, first electrode layer 101, functional layer 102, second electrode layer 103, metal electrode layer 104, substrate 105, perovskite layer 1021, electron transport layer 1022, hole transport layer 1023, first conductive layer 1031, second conductive layer 1032, third conductive layer 1033, surface a, side b, first part c, second part d, photovoltaic device 1000, power consuming device 2000, power generating device 3000. DETAILED DESCRIPTION

[0050] The embodiments of the technical solutions of the present application will be described in detail below with reference to the drawings. The following embodiments are only used to more clearly illustrate the technical solutions of the present application, and therefore only serve as examples, and cannot limit the protection scope of the present application.

[0051] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which the present application belongs; the terms used herein are only for the purpose of describing specific embodiments of the present application, and are not intended to limit the present application; the terms "include" and "have" and any variations thereof in the specification and claims of the present application and the above description of drawings are intended to cover non-exclusive inclusion.

[0052] In the description of the embodiments of the present application, the technical terms "first", "second", etc. are only used to distinguish different objects, and cannot be understood as indicating or implying relative importance or implicitly indicating the number, specific order or primary and secondary relationship of the indicated technical features. In the description of the embodiments of the present application, the meaning of "a plurality of" is two or more, unless otherwise explicitly and specifically limited.

[0053] Reference to "an embodiment" herein means that a particular feature, structure, or characteristic described in connection with the embodiment can be included in at least one embodiment of the present application. The appearance of the phrase in various places in the specification does not necessarily all refer to the same embodiment, nor is it necessarily independent or alternative to other embodiments. It is explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.

[0054] In the description of the embodiments of the present application, the term "and / or" is only to describe the association relationship of the associated objects, which means that there can be three relationships, for example, A and / or B, which can represent the three cases of A alone, A and B together, and B alone. In addition, the character " / " in this paper generally represents that the front and rear associated objects are a "or" relationship.

[0055] In current technology, indium zinc oxide (IZO) or indium tin oxide (ITO) is commonly used as the second electrode layer of perovskite solar cells, each of which has some advantages and disadvantages.

[0056] Indium zinc oxide (IZO) as the second electrode layer has the following advantages:

[0057] (1) Wide band transparency: IZO transparent electrode has good response in the near infrared (NIR) region, which helps to improve the overall photoelectric conversion efficiency of solar cells.

[0058] (2) High electron mobility: Optimized IZO thin film can achieve high electron mobility, which is beneficial to reduce the resistance of the thin film and improve the performance of solar cells.

[0059] (3) Low parasitic absorption: IZO transparent electrode has low parasitic absorption in the solar spectrum range, which helps to improve the energy collection efficiency of solar cells.

[0060] However, IZO transparent electrode also has some disadvantages:

[0061] (1) Stability problem: IZO thin film has relatively poor stability in air, especially sensitive to oxygen and water vapor.

[0062] (2) Preparation difficulty: The preparation process of IZO thin film may be more complex, which requires fine control to ensure the quality and performance of the thin film.

[0063] Indium tin oxide (ITO) transparent electrode is a widely used transparent electrode material, which has the following advantages:

[0064] (1) Mature preparation technology: The preparation technology of indium tin oxide (ITO) transparent electrode is very mature, including methods such as magnetron sputtering, which is easy to mass produce.

[0065] (2) Good electrical performance: Indium tin oxide (ITO) has high transparency and good conductivity, which is suitable for various optoelectronic devices.

[0066] (3) Cost-effective: Because of the mature preparation technology of indium tin oxide (ITO), its cost is relatively low, which is suitable for large-scale commercial production.

[0067] However, indium tin oxide (ITO) transparent electrode also has some disadvantages:

[0068] Parasitic absorption: the parasitic absorption of the indium tin oxide (ITO) transparent electrode is relatively high in certain wavelength ranges, which may affect the performance of the solar cell.

[0069] In summary, IZO and ITO transparent electrodes each have their unique advantages and disadvantages. The present patent combines the two to form a multilayer oxide on a solar cell as a transparent electrode.

[0070] With reference to Figure 1 The present application provides a solar cell 100, which comprises a first electrode layer 101, a functional layer 102 and a second electrode layer 103 sequentially stacked on a substrate 105, and the second electrode layer 103 comprises a first conductive layer 1031, a second conductive layer 1032 and a third conductive layer 1033 sequentially stacked, wherein the first conductive layer 1031 and the third conductive layer 1033 comprise indium tin oxide, and the second conductive layer 1032 comprises indium zinc oxide; wherein the first conductive layer 1031 is located on the side of the second conductive layer 1032 facing the functional layer 102, and the third conductive layer 1033 is located on the side of the second conductive layer 1032 away from the functional layer 102.

[0071] In the technical scheme of the present application, the second electrode layer 103 comprises a first conductive layer 1031, a second conductive layer 1032 and a third conductive layer 1033 sequentially stacked, wherein the first conductive layer 1031 is located on the side close to the functional layer 102, the first conductive layer 1031 comprises indium tin oxide and has good electrical properties, which is conducive to current transmission, thereby improving the electrical conductivity; the second conductive layer 1032 is the main layer of the second electrode layer 103, the second conductive layer 1032 comprises indium zinc oxide, has low parasitic absorption and high electron mobility, which is conducive to reducing the resistance of the second electrode layer 103 and improving the carrier collection efficiency of the solar cell 100, thereby helping to improve the photoelectric conversion efficiency of the solar cell 100; the third conductive layer 1033 is located on the side away from the functional layer 102, and the third conductive layer 1033 comprises indium tin oxide, has high transparency and is not easily eroded by water vapor in the air when in contact with the air side, and has strong stability. The second electrode layer 103 in the present embodiment is beneficial to improving the photoelectric conversion efficiency of the solar cell 100 and at the same time improving the stability of the solar cell 100.

[0072] In addition, the process for directly preparing the indium tin oxide on the functional layer 102 has low complexity and good film layer quality, the process for directly preparing the indium zinc oxide on the functional layer 102 has high complexity and poor film layer quality, and the indium zinc oxide and the indium tin oxide have certain similarity in crystal structure. Therefore, the indium tin oxide layer is first formed on the functional layer 102, the indium tin oxide is used as a growth seed layer for growing the indium zinc oxide, the film layer quality of the indium zinc oxide layer is good, the process complexity is reduced, the indium zinc oxide layer is provided with the indium tin oxide layer on the side away from the functional layer 102, the contact between the indium zinc oxide and air is reduced, and the stability of the solar cell 100 is provided.

[0073] It should be noted that the preparation method of the second electrode layer 103 can be magnetron sputtering. This method has uniform film formation, high density, controllable film thickness, and good repeatability, and is suitable for mass production.

[0074] In some embodiments, the thickness of the first conductive layer 1031 is 5nm-15nm.

[0075] In the technical solution of the embodiment of the present application, the thickness of the first conductive layer 1031 is within the above range, which can maintain the good conductivity of the second electrode layer, thereby improving the photoelectric conversion efficiency of the solar cell 100.

[0076] The thickness of the first conductive layer 1031 can be 5nm, 5.5nm, 6nm, 8nm, 10nm, 11nm, 12nm, 14nm, 14.5nm, 15nm, or a range composed of any two of the above values, such as 5nm-8nm, 8nm-12nm, 12nm-15nm, 6nm-10nm, 11nm-14.5nm, etc.

[0077] In some embodiments, the thickness of the first conductive layer 1031 is 5nm-10nm.

[0078] In the technical solution of the embodiment of the present application, the thickness of the first conductive layer 1031 is within the above range, which can maintain the good conductivity of the second electrode layer 103, thereby improving the photoelectric conversion efficiency of the solar cell 100.

[0079] The thickness of the first conductive layer 1031 can be 5nm, 5.5nm, 6nm, 7nm, 8nm, 8.5nm, 10nm, or a range composed of any two of the above values, such as 5nm-6nm, 6nm-8nm, 8nm-10nm, 5.5nm-8.5nm, etc.

[0080] In some embodiments, the thickness of the second conductive layer 1032 is 20nm-40nm.

[0081] In the technical solution of the embodiment of the present application, the thickness of the second conductive layer 1032 is within the above range, the light transmittance at the wide band gap is good, the parasitic absorption is low, and the electron mobility is high, which is beneficial to reduce the resistance of the second electrode layer 103 and improve the energy collection efficiency of the solar cell 100, thereby helping to improve the photoelectric conversion efficiency of the solar cell 100.

[0082] The thickness of the second conductive layer 1032 can be 20 nm, 22 nm, 25 nm, 30 nm, 32 nm, 35 nm, 36 nm, 38 nm, 40 nm, or a range formed by any two of the above values, for example, 20 nm to 25 nm, 25 nm to 35 nm, 35 nm to 40 nm, 25 nm to 36 nm, etc.

[0083] In some embodiments, the thickness of the second conductive layer 1032 is 30 nm to 40 nm.

[0084] In the technical solution of the embodiment of the present application, the thickness of the second conductive layer 1032 is within the above range, the light transmittance at the wide band gap is good, the parasitic absorption is low, and the electron mobility is high, which is beneficial to reduce the resistance of the second electrode layer 103 and improve the energy collection efficiency of the solar cell 100, thereby helping to improve the photoelectric conversion efficiency of the solar cell 100.

[0085] The thickness of the second conductive layer 1032 can be 30 nm, 33 nm, 35 nm, 38 nm, 39 nm, 40 nm, or a range formed by any two of the above values, for example, 30 nm to 35 nm, 35 nm to 40 nm, 33 nm to 38 nm, etc.

[0086] In some embodiments, the thickness of the third conductive layer 1033 is 5 nm to 30 nm.

[0087] In the technical solution of the embodiment of the present application, the thickness of the third conductive layer 1033 is within the above range, which has high transparency and effectively isolates water and oxygen from the second conductive layer 1032, so that the indium zinc oxide of the second conductive layer 1032 is not easily eroded by water and oxygen in the air, thereby increasing the stability of the indium zinc oxide of the second conductive layer 1032 and improving the stability of the solar cell 100.

[0088] The thickness of the third conductive layer 1033 can be 5 nm, 8 nm, 10 nm, 12 nm, 15 nm, 20 nm, 25 nm, 26 nm, 28 nm, 30 nm, or a range formed by any two of the above values, for example, 5 nm to 12 nm, 12 nm to 20 nm, 20 nm to 30 nm, 8 nm to 15 nm, 10 nm to 25 nm, etc.

[0089] In some embodiments, the third conductive layer 1033 has a thickness of 5-10 nm.

[0090] In the technical solution of the embodiments of the present application, the third conductive layer 1033 has a thickness within the above range, has high transparency, is not easily eroded by water vapor in the air when in contact with the air side, and has high stability, thereby improving the stability of the solar cell 100.

[0091] The thickness of the third conductive layer 1033 can be 5 nm, 5.5 nm, 6 nm, 7 nm, 8 nm, 9 nm, 10 nm, or a range formed by any two of the above values, for example, 5-7 nm, 7-8 nm, 8-10 nm, 5.5-9 nm, etc.

[0092] In the technical solution of the embodiments of the present application, the third conductive layer 1033 has a thickness within the above range, has high transparency, and effectively prevents water and oxygen from reaching the indium zinc oxide of the second conductive layer 1032, thereby increasing the stability of the indium zinc oxide of the second conductive layer 1032 and improving the stability of the solar cell 100.

[0093] In some embodiments, referring to Figure 2 , the side of the substrate 105 of the solar cell 100 on which the solar cell 100 is located is the light-incident side, the surface a of the first conductive layer 1031 facing the second conductive layer 1032 has a microstructure, and the microstructure includes at least one of a recess and a groove on the surface of the first conductive layer 1031.

[0094] In the technical solution of the embodiments of the present application, the microstructure can reflect light entering the solar cell 100 from the light-incident side of the solar cell 100, thereby increasing the light utilization rate of the solar cell 100. In addition, the microstructure is located on the surface a of the first conductive layer 1031 facing the second conductive layer 1032, which can increase the contact area between the first conductive layer 1031 and the second conductive layer 1032, increase the electrical conduction efficiency, and increase the film layer bonding strength between the first conductive layer 1031 and the second conductive layer 1032, thereby improving the structural stability.

[0095] In some embodiments, referring to Figure 3, the second conductive layer 1032 is located within the outline of the first conductive layer 1031 in the thickness direction of the solar cell 100, the side surface b of the second conductive layer 1032 and the surface a of the first conductive layer 1031 facing the second conductive layer 1032 form a stepped region, the third conductive layer 1033 includes a first portion c and a second portion d, the first portion c is located on the surface of the second conductive layer 1032 away from the first conductive layer 1031, and the second portion d is located in the stepped region and covers at least part of the side surface b of the second conductive layer 1032.

[0096] It should be noted that the plane in which the side surface b of the second conductive layer 1032 is located intersects the plane in which the surface a of the first conductive layer 1031 facing the second conductive layer 1032 is located, and in some embodiments, the two planes are perpendicular to each other.

[0097] In the technical scheme of the embodiment of the present application, by locating the second conductive layer 1032 within the outline of the first conductive layer 1031 in the thickness direction of the solar cell 100, the side surface b of the second conductive layer 1032 and the surface a of the first conductive layer 1031 facing the second conductive layer 1032 form a stepped region, the first portion c of the third conductive layer 1033 covers the surface of the second conductive layer 1032 away from the first conductive layer 1031, and the second portion d is located in the stepped region and covers at least part of the side surface b of the second conductive layer 1032, so that the first conductive layer 1031 and the third conductive layer 1033 form a partial or full encapsulation effect on the second conductive layer 1032, thereby better isolating the indium zinc oxide of the second conductive layer 1032 from water and oxygen, making the indium zinc oxide of the second conductive layer 1032 less susceptible to water and oxygen in the air, increasing the stability of the indium zinc oxide of the second conductive layer 1032, and thereby improving the stability of the solar cell 100.

[0098] In some embodiments, the first conductive layer 1031 and the third conductive layer 1033 form a partial encapsulation on the second conductive layer 1032, for example, the first portion c of the third conductive layer 1033 covers the surface of the second conductive layer 1032 away from the first conductive layer 1031, and the second portion d covers part of the side surface b of the second conductive layer 1032, so that the first conductive layer 1031 and the third conductive layer 1033 form a partial encapsulation effect on the second conductive layer 1032.

[0099] In some embodiments, the first conductive layer 1031 and the third conductive layer 1033 form a full encapsulation on the second conductive layer 1032, for example, the first portion c of the third conductive layer 1033 covers the surface of the second conductive layer 1032 away from the first conductive layer 1031, and the second portion d covers all of the side surface b of the second conductive layer 1032, so that the first conductive layer 1031 and the third conductive layer 1033 form a full encapsulation effect on the second conductive layer 1032.

[0100] In some embodiments, the sheet resistance of the first conductive layer 1031 is 10 Ω / sq to 15 Ω / sq.

[0101] In the technical solution of the embodiments of the present application, the sheet resistance of the first conductive layer 1031 is in the above range, which can promote light energy and improve the photoelectric conversion efficiency of the solar cell 100.

[0102] The sheet resistance of the first conductive layer 1031 can be 10 Ω / sq, 12 Ω / sq, 13.5 Ω / sq, 14 Ω / sq, 14.5 Ω / sq, 15 Ω / sq, or a range formed by any two of the above values, for example, 10 Ω / sq to 12 Ω / sq, 12 Ω / sq to 14 Ω / sq, 14 Ω / sq to 15 Ω / sq, 13.5 Ω / sq to 14.5 Ω / sq, and the like.

[0103] In some embodiments, the sheet resistance of the second conductive layer 1032 is 40 Ω / sq to 45 Ω / sq.

[0104] In the technical solution of the embodiments of the present application, the sheet resistance of the second conductive layer 1032 is in the above range, which can effectively collect and transmit photo-generated current and can improve the photoelectric conversion efficiency of the solar cell 100.

[0105] The sheet resistance of the second conductive layer 1032 can be 40 Ω / sq, 42 Ω / sq, 43.2 Ω / sq, 44 Ω / sq, 44.5 Ω / sq, 45 Ω / sq, or a range formed by any two of the above values, for example, 40 Ω / sq to 42 Ω / sq, 42 Ω / sq to 44 Ω / sq, 44 Ω / sq to 45 Ω / sq, 43.2 Ω / sq to 44.5 Ω / sq, and the like.

[0106] In some embodiments, the sheet resistance of the third conductive layer 1033 is 10 Ω / sq to 15 Ω / sq.

[0107] In the technical solution of the embodiments of the present application, the sheet resistance of the third conductive layer 1033 is in the above range, which has high conductivity and can improve the photoelectric conversion efficiency of the solar cell 100.

[0108] The sheet resistance of the third conductive layer 1033 can be 10 Ω / sq, 12 Ω / sq, 13.5 Ω / sq, 14 Ω / sq, 14.5 Ω / sq, 15 Ω / sq, or a range formed by any two of the above values, for example, 10 Ω / sq to 12 Ω / sq, 12 Ω / sq to 14 Ω / sq, 14 Ω / sq to 15 Ω / sq, 13.5 Ω / sq to 14.5 Ω / sq, and the like.

[0109] In some embodiments, the conductivity of the first conductive layer, the second conductive layer, and the third conductive layer is 1 × 105 S / m~10×10 5 S / m.

[0110] In the technical scheme of the embodiment, the conductivities of the first conductive layer, the second conductive layer and the third conductive layer are within the above range, and the high conductivity can improve the photoelectric conversion efficiency of the solar cell.

[0111] The conductivities of the first conductive layer, the second conductive layer and the third conductive layer can be 1×10 5 S / m, 1.5×10 5 S / m, 1.8×10 5 S / m, 2.0×10 5 S / m, 2.5×10 5 S / m, 3.2×10 5 S / m, 4.5×10 5 S / m, 5×10 5 S / m, 5.5×10 5 S / m, 6.8×10 5 S / m, 7.6×10 5 S / m, 8.5×10 5 S / m, 9.4×10 5 S / m, 10×10 5 S / m, or a range composed of any two of the above values, for example, 1×10 5 S / m~4.5×10 5 S / m, 4.5×10 5 S / m~8.5×10 5 S / m, 8.5×10 5 S / m~10×10 5 S / m, 5.5×10 5 S / m~7.6×10 5 S / m, etc.

[0112] In some embodiments, the functional layer 102 further comprises a perovskite layer 1021, an electron transport layer 1022 arranged on one side of the perovskite layer 1021 along the thickness direction of the functional layer 102, and / or a hole transport layer 1023 arranged on the other side of the perovskite layer 1021 along the thickness direction of the functional layer 102.

[0113] In some embodiments, referring to Figure 4 , the solar cell 100 is a reverse perovskite solar cell, and the reverse perovskite solar cell 100 comprises a first electrode layer 101, a hole transport layer 1023, a perovskite layer 1021, an electron transport layer 1022 and a second electrode layer 103 which are sequentially stacked, and the first electrode layer 101 is the light incident direction.

[0114] In some embodiments, referring to Figure 5 , the solar cell 100 is a formal perovskite solar cell, which includes a first electrode layer 101, an electron transport layer 1022, a perovskite layer 1021, a hole transport layer 1023 and a second electrode layer 103, which are sequentially stacked, and the first electrode layer 101 is the light incident direction.

[0115] The first electrode layer 101 includes a transparent conductive substrate, which functions to guide the photo-generated carriers out, and the transparent conductive substrate includes but is not limited to one of the following materials: FTO (fluorine-doped tin oxide), ITO (indium tin oxide), AZO (aluminum-doped zinc oxide), BZO (boron-doped zinc oxide), IZO (indium-doped zinc oxide).

[0116] The hole transport layer 1023 is one or more of the following materials and their derivatives and the materials obtained by doping or passivation thereof: nickel oxide, cuprous iodide (CuI), cuprous oxide (Cu2O), cuprous thiocyanate (CuSCN), 2,2',7,7'-tetra(N,N-p-methoxyphenylamine)-9,9'-spirobifluorene (Spiro-OMeTAD), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA), [4-(3,6-dimethyl-9H-carbazol-9-yl)butyl]phosphonic acid (Me-4PACz), [4-(3,6-dimethoxy-9H-carbazol-9-yl)butyl]phosphonic acid (MeO-4PACz), [4-(9H-carbazol-9-yl)butyl]phosphonic acid (4PACz), (4-(3,6-dibromo-9H-carbazol-9-yl)butyl)phosphonic acid (Br-4PACz), [2-(3,6-dimethoxy-9H-carbazol-9-yl)ethyl]phosphonic acid (MeO-2PACz), (2-(3,6-dimethyl-9H-carbazol-9-yl)ethyl)phosphonic acid (Me-2PACz), (2-(9H-carbazol-9-yl)ethyl)phosphonic acid (2PACz), (2-(3,6-dibromo-9H-carbazol-9-yl)ethyl)phosphonic acid (Br-2PACz), and other materials reported in patents or literature.

[0117] The components of the perovskite layer 1021 can be ABX3 or A2CDX6, A includes inorganic or organic or organic-inorganic mixed cations, which can be at least one of MA + (ammonia cation), FA + (formamidine cation), Cs + , Rb + ; B includes inorganic cations, which can be at least one of Pb 2+ , Sn 2+ ; C includes inorganic or organic or organic-inorganic mixed cations, which are commonly Ag+ Cu + Au + FA + GA + guanidinium cation); D comprises inorganic cations, which can be Bi 3+ Sb 3+ and In 3+ X comprises inorganic anions, which can be Cl - Br - I - .

[0118] The electron transport layer 1022 is responsible for extracting electrons and blocking holes, and the electron transport layer 1022 is at least one of the following materials and derivatives thereof and materials obtained by doping or passivation thereof: [6,6]-phenyl C 61 methyl butyrate (PC 61 BM), [6,6]-phenyl C 71 methyl butyrate (PC 71 BM), fullerene C60 (C60), fullerene C70 (C70), tin dioxide (SnO2), zinc oxide (ZnO), etc.

[0119] In some embodiments, referring to Figure 6 , the second electrode layer 103 can further include a metal electrode layer 104 on the side away from the perovskite layer 1021, and the metal electrode layer 104 comprises a conductive material. The conductive material is not particularly limited in the present application. For example, the conductive material comprises one or more of metals and their alloys, and elemental carbon materials. Illustratively, the metals and their alloys comprise one or more of gold, silver, copper, aluminum, nickel, chromium, bismuth, platinum, magnesium, molybdenum, tungsten. Illustratively, the elemental carbon materials comprise one or more of graphite, graphene, carbon nanotubes.

[0120] It should be noted that modification layers can be inserted between layers and layers. For example, a passivation layer is inserted between the perovskite layer and the hole transport layer, which is used to passivate the defects of the perovskite layer, which can further improve the performance of the solar cell, such as phenethylamine, ethylenediamine, phenethylamine hydroiodide, dodecyl hydroiodide, etc. For example, a hole blocking layer is inserted on the side of the electron transport layer away from the perovskite layer, which is used to block holes, and the material can include SnO2, bathocuproine (2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline, BCP), etc.

[0121] The solar cell 100 disclosed by the embodiments of the present application can be used in an electric device or a power generation device which applies photoelectric conversion. The electric device can be, but is not limited to, a mobile phone, a tablet, a notebook computer, an electric toy, an electric tool, an electric vehicle, an electric automobile, a ship, a spacecraft, etc. The electric toy can include a fixed or mobile electric toy, such as a game machine, an electric automobile toy, an electric ship toy, an electric aircraft toy, etc. The spacecraft can include an airplane, a rocket, a space shuttle, a spacecraft, etc. The power generation device can include the solar cell 100 and an energy storage device, which can be a secondary battery.

[0122] With reference to Figure 7 The present application also provides a photovoltaic device 1000, which comprises the solar cell 100 as described above or the solar cell 100 prepared by the preparation method of the solar cell 100 as described above.

[0123] With reference to Figure 8 The present application also provides an electric device 2000, which comprises the solar cell 100 as described above or the solar cell 100 prepared by the preparation method of the solar cell 100 as described above.

[0124] In the present application, the solar cell 100 serves as a power supply for the electric device 2000 as described above; or the solar cell 100 can serve as an energy storage unit of the electric device 2000 as described above. As an example, the electric device 2000 can be a lighting element, a display element, or an automobile, etc.

[0125] With reference to Figure 9 The present application also provides a power generation device 3000, which comprises the solar cell 100 as described above or the solar cell 100 prepared by the preparation method of the solar cell 100 as described above. The power generation device 3000 can include the solar cell 100 and an energy storage device, which can be a secondary battery.

[0126] In order to make the technical problems, technical solutions and beneficial effects solved by the embodiments of the present application clearer, further detailed description will be made in combination with embodiments and drawings. Obviously, the described embodiments are only a part of the embodiments of the present application, but not all the embodiments. The description of the at least one exemplary embodiment is actually only illustrative, but not as any limitation on the present application and its application. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor fall within the scope of protection of the present application.

[0127] The features and performances of the present application will be further described in combination with embodiments.

[0128] Embodiment 1

[0129] (1) Preparation of the first electrode layer: The glass on which the transparent conductive film (fluorine-doped tin oxide FTO, thickness of 600 nm) has been prepared is cleaned using acetone-alcohol-deionized water in sequence; after drying, it is ready for use.

[0130] (2) Preparation of the hole transport layer: 2 mg of [4-(3,6-dimethoxy-9H-carbazol-9-yl)butyl] phosphonic acid (MeO-4PACz) is added to 4 mL of ethanol solvent and stirred, and the ethanol solution of MeO-4PACz is spin-coated onto the first electrode layer at a spin-coating speed of 4000 rpm for 30 s, and then transferred to a hot stage for annealing at 100°C for 10 min to form a first carrier transport layer with a thickness of 2 nm.

[0131] (3) Preparation of the perovskite layer: The perovskite precursor solution (FAPbI3) is scraped onto the hole transport layer, and the solution concentration is 1.0 M. The scraping device is used, the distance between the scraper and the substrate surface is set to 100 μm, the scraping speed is set to 5 mm / s, and the pressure of the nitrogen gas blown by the air knife is set to 0.15 mPa. The film after scraping is placed on a hot stage at a temperature of 150°C for heating for 15 min, and the thickness of the obtained light absorption layer is controlled to be 500 nm.

[0132] (4) Preparation of the electron transport layer / hole blocking layer: The evaporation device is used to evaporate 25 nm of C60 (electron transport layer) / 7 nm of BCP (2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline, hole blocking layer) on the substrate on which the perovskite has been prepared in step (3).

[0133] (5) Preparation of the second electrode layer:

[0134] ① Preparation of the first conductive layer: A 10 nm thick indium tin oxide (ITO) layer is prepared on the hole blocking layer by magnetron sputtering to form the first conductive layer, wherein the target material of the indium tin oxide (ITO) is a target material doped with 10% SnO2 in In2O3, and the conductivity of the first conductive layer is 257000 S / m.

[0135] ② Preparation of the second conductive layer: A 40 nm thick indium zinc oxide (IZO) layer is prepared on the first conductive layer by magnetron sputtering to form the second conductive layer, wherein the target material of the indium zinc oxide (IZO) is a target material doped with 10% ZnO in In2O3, and the conductivity of the second conductive layer is 154000 S / m.

[0136] ③Preparation of the third conductive layer: an indium tin oxide (ITO) layer with a thickness of 5 nm was prepared on the second conductive layer by magnetron sputtering, to form the third conductive layer, wherein the target material of the indium tin oxide (ITO) was a target material doped with 10% SnO2 in In2O3, and the conductivity of the third conductive layer was 257000 S / m.

[0137] Example 2

[0138] Similar to Example 1, except that:

[0139] The thickness of the third conductive layer in step (5) of Example 1 was adjusted to 10 nm.

[0140] Example 3

[0141] Similar to Example 1, except that:

[0142] The thickness of the third conductive layer in step (5) of Example 1 was adjusted to 30 nm.

[0143] Example 4

[0144] Similar to Example 2, except that:

[0145] The thickness of the second conductive layer in step (5) of Example 2 was adjusted to 20 nm.

[0146] Example 5

[0147] Similar to Example 2, except that:

[0148] The thickness of the second conductive layer in step (5) of Example 2 was adjusted to 30 nm.

[0149] Example 6

[0150] Similar to Example 2, except that:

[0151] The thickness of the first conductive layer in step (5) of Example 2 was adjusted to 5 nm.

[0152] Example 7

[0153] Similar to Example 2, except that:

[0154] The thickness of the first conductive layer in step (5) of Example 2 was adjusted to 15 nm.

[0155] Comparative Example 1

[0156] Similar to Example 1, except that:

[0157] No first conductive layer and third conductive layer were prepared in step (5) of Example 1.

[0158] Comparative Example 2

[0159] Similar to Example 6, except that:

[0160] The third conductive layer was not prepared in step (5) of Example 6.

[0161] Comparative Example 3

[0162] Similar to Example 1, except that:

[0163] The third conductive layer was not prepared in step (5) of Example 1.

[0164] Comparative Example 4

[0165] Similar to Example 2, except that:

[0166] The first conductive layer was not prepared in step (5) of Example 2.

[0167] Comparative Example 5

[0168] Similar to Example 1, except that:

[0169] The first conductive layer was not prepared in step (5) of Example 1.

[0170] The battery devices 1-12 obtained in Examples 1-7 and Comparative Examples 1-5 above were subjected to battery performance tests, and Table 1 was obtained.

[0171] Test Method:

[0172] 1. Photoelectric conversion efficiency test method: Under the irradiation of standard simulated sunlight (AM1.5G, 100 mW / cm 2 ), the battery performance was tested to obtain an I-V curve. According to the I-V curve and the data fed back by the test equipment, the short-circuit current Jsc(unit: mA / cm 2 ), the open-circuit voltage Voc(unit: V), the maximum light output current Jmpp(unit: mA) and the maximum light output voltage Vmpp(unit: V) can be obtained. The fill factor FF of the battery was calculated by the formula FF = Jsc x Voc / (Jmpp x Vmpp), unit: %. The photoelectric conversion efficiency PCE of the battery was calculated by the formula PCE = Jsc x Voc x FF / Pw, unit: %; Pw represents the input power, unit: mW.

[0173]

[0174]

[0175] As can be seen from the data in Table 1, the solar cell devices 1-7, 9 and 10 corresponding to Examples 1-7, Comparative Example 2 and Comparative Example 3 are all provided with a first conductive layer, and the photoelectric conversion efficiencies of the solar cell devices 1-7, 9 and 10 are all higher than those of the solar cell devices 8, 11 and 12 corresponding to Comparative Example 1, Comparative Example 4 and Comparative Example 5, which indicates that the solar cell has good electrical properties and facilitates current transmission, thereby improving the electrical conductivity and the photoelectric conversion efficiency of the solar cell, by providing the first conductive layer on the side of the second electrode layer close to the functional layer.

[0176] The solar cell devices 1-7, 11 and 12 corresponding to Examples 1-7, Comparative Example 4 and Comparative Example 5 are all provided with a third conductive layer, and the solar cell devices 1-7, 11 and 12 all have a higher percentage of residual efficiency after 7 days in air at 25℃ and 40% relative humidity than the solar cell devices 8-10 corresponding to Comparative Examples 1-3, which indicates that the stability of the solar cell is enhanced by providing the third conductive layer on the side of the second electrode layer away from the functional layer, so that the side of the second conductive layer of the solar cell device facing the air is not easily eroded by water vapor in the air.

[0177] The above description is merely an embodiment of the present application and does not limit the patent scope of the present application, and any equivalent structure or equivalent process transformation using the content of the specification and drawings, or direct or indirect application in other related technical fields, are also included in the patent protection scope of the present application.

Claims

1. A solar cell, characterized by, The solar cell comprises a first electrode layer, a functional layer and a second electrode layer which are sequentially stacked on a substrate, and the second electrode layer comprises a first conductive layer, a second conductive layer and a third conductive layer which are sequentially stacked, wherein the first conductive layer and the third conductive layer comprise indium tin oxide, and the second conductive layer comprises indium zinc oxide; the first conductive layer is located on the side of the second conductive layer facing the functional layer, and the third conductive layer is located on the side of the second conductive layer away from the functional layer.

2. The solar cell of claim 1, wherein The thickness of the first conductive layer is 5-15 nm.

3. The solar cell of claim 1, wherein the first and second electrodes are formed of a material selected from the group consisting of silver, aluminum, gold, copper, and combinations thereof. The thickness of the first conductive layer is 5-10 nm.

4. The solar cell according to any one of claims 1 to 3, wherein The thickness of the second conductive layer is 20-40 nm.

5. The solar cell according to any one of claims 1 to 3, wherein The thickness of the second conductive layer is 30-40 nm.

6. The solar cell according to any one of claims 1 to 3, wherein The thickness of the third conductive layer is 5-30 nm.

7. The solar cell of claim 6, wherein the first and second doped regions are formed by implanting dopants into the first and second surfaces of the substrate. The thickness of the third conductive layer is 5-10 nm.

8. The solar cell according to any one of claims 1 to 3, wherein The side of the substrate of the solar cell is a light-in side, and the surface of the first conductive layer facing the second conductive layer has a microstructure, which is at least one of a recess and a groove on the surface of the first conductive layer.

9. The solar cell according to any one of claims 1 to 3, wherein The second conductive layer is located within the contour of the first conductive layer in the orthographic projection of the first conductive layer along the thickness direction of the solar cell, the side surface of the second conductive layer and the surface of the first conductive layer facing the second conductive layer form a stepped region, the third conductive layer comprises a first part and a second part, the first part is located on the surface of the second conductive layer away from the first conductive layer, and the second part is located in the stepped region and covers at least part of the side surface of the second conductive layer.

10. The solar cell according to any one of claims 1 to 3, wherein The sheet resistance of the first conductive layer is 10-15 Ω / sq.

11. The solar cell according to any one of claims 1 to 3, wherein The sheet resistance of the second conductive layer is 40-45 Ω / sq.

12. The solar cell according to any one of claims 1 to 3, wherein The sheet resistance of the third conductive layer is 10-15 Ω / sq.

13. The solar cell according to any one of claims 1 to 3, wherein The conductivity of the first conductive layer, the second conductive layer and the third conductive layer is 1 x 10 5 S / m~10 x 10 5 S / m.

14. The solar cell according to any one of claims 1 to 3, wherein The functional layer comprises a perovskite layer, an electron transport layer arranged on one side of the perovskite layer along the thickness direction of the functional layer, and / or a hole transport layer arranged on the other side of the perovskite layer along the thickness direction of the functional layer.

15. A photovoltaic device, characterized by The solar cell comprises the solar cell according to any one of claims 1-14.

16. An electrical device, comprising: The solar cell comprises the solar cell according to any one of claims 1-14.

17. A power generation device characterized by comprising: The solar cell comprises the solar cell according to any one of claims 1-14.

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