Hydrogen selenide tail gas treatment device for production of CVD (Chemical Vapor Deposition) zinc selenide and CVD zinc selenide production system

Abstract

The utility model provides a hydrogen selenide tail gas treatment device for CVD zinc selenide production and a CVD zinc selenide production system. The hydrogen selenide tail gas treatment device for CVD zinc selenide production comprises a heating decomposition mechanism, a primary filter, a selenium cooling mechanism and a secondary filter, the heating decomposition mechanism is used for heating hydrogen selenide-containing tail gas in the tail gas pipeline so as to decompose hydrogen selenide into hydrogen and selenium steam; the primary filter is at least used for filtering the tail gas passing through the heating decomposition mechanism; the selenium cooling mechanism is connected to the tail end of the tail gas pipeline and is at least used for receiving the tail gas passing through the primary filter and cooling selenium steam into solid selenium powder; the secondary filter is used for receiving the tail gas containing the solid selenium powder from the selenium cooling mechanism, filtering and recycling the powder and discharging the tail gas after the powder is filtered and recycled to the mechanical pump and the tail gas absorption tower. The CVD zinc selenide production system comprises a chemical deposition furnace, a mechanical pump adopting pump oil to vacuumize, a tail gas absorption tower and a CVD zinc selenide production hydrogen selenide tail gas treatment device.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to the field of zinc selenide preparation, and more particularly to a hydrogen selenide tail gas treatment device for CVD zinc selenide production and a CVD zinc selenide production system. BACKGROUND

[0002] Zinc selenide is an infrared optical crystal material with excellent low absorption and high transmittance, mainly used for infrared windows, infrared optical lenses, prisms, etc. Currently, zinc selenide is mainly produced using CVD. Chemical deposition furnace is used to produce zinc selenide. However, in the chemical vapor deposition reaction of zinc selenide, hydrogen selenide that does not participate in the reaction and decomposition will enter the vacuum pump and the tail gas absorption tower. The hydrogen selenide gas will partially decompose in the vacuum pump (i.e. a mechanical pump using pump oil to create vacuum) to generate elemental selenium, which will mix in the vacuum pump, causing pump oil pollution, solid particle accumulation, and oil pipe blockage, resulting in a decline in the performance of the vacuum pump and the risk of sudden stop, which is not conducive to long-term stable operation and seriously affects the smooth progress of chemical vapor deposition of zinc selenide. The remaining hydrogen selenide will enter the tail gas absorption tower for treatment. Although the tail gas hydrogen selenide can be absorbed, it is easy to cause selenium sludge, which needs to be salvaged regularly and manually processed at high cost. CONTENT OF THE UTILITY MODEL

[0003] In view of the problems in the background art, an object of the present disclosure is to provide a hydrogen selenide tail gas treatment device for CVD zinc selenide production and a CVD zinc selenide production system, which can reduce the amount of hydrogen selenide contained in the tail gas entering the downstream mechanical pump using pump oil to create vacuum and the tail gas absorption tower.

[0004] Thus, the CVD zinc selenide production hydrogen selenide tail gas treatment device is used for being installed between the tail gas pipeline of the chemical deposition furnace for growing CVD zinc selenide by using zinc and hydrogen selenide, the mechanical pump for pumping oil to vacuumize and the tail gas absorption tower, and the CVD zinc selenide production hydrogen selenide tail gas treatment device comprises a heating decomposition mechanism, a primary filter, a selenium cooling mechanism and a secondary filter; the heating decomposition mechanism is arranged around the tail gas pipeline of the chemical deposition furnace, and is used for heating the tail gas containing hydrogen selenide in the tail gas pipeline to decompose the hydrogen selenide into hydrogen and selenium vapor; the primary filter is connected to the end of the tail gas pipeline, and is used for at least filtering the solid powder contained in the tail gas passing through the heating decomposition mechanism; the selenium cooling mechanism is connected to the end of the tail gas pipeline, and is used for at least receiving the tail gas containing the decomposed selenium vapor from the tail gas pipeline and passing through the primary filter, and cooling the selenium vapor in the received tail gas into solid selenium powder; the secondary filter is connected between the upstream selenium cooling mechanism and the downstream mechanical pump for pumping oil to vacuumize and the tail gas absorption tower, and is used for receiving the tail gas containing the solid selenium powder from the selenium cooling mechanism, filtering and recovering the powder, discharging the tail gas after the powder filtering and recovering to the downstream mechanical pump for pumping oil to vacuumize and the tail gas absorption tower.

[0005] A CVD zinc selenide production system comprises a chemical deposition furnace for growing CVD zinc selenide by using zinc and hydrogen selenide, a mechanical pump for pumping oil to vacuumize and a tail gas absorption tower, the top of the chemical deposition furnace is provided with a tail gas pipeline, the tail gas pipeline is connected to the mechanical pump and the tail gas absorption tower, and the CVD zinc selenide production system further comprises the aforementioned CVD zinc selenide production hydrogen selenide tail gas treatment device.

[0006] The beneficial effects of the present disclosure are as follows.

[0007] In the CVD zinc selenide production hydrogen selenide tail gas treatment device and the CVD zinc selenide production system according to the present disclosure, the heating decomposition mechanism is used to decompose the hydrogen selenide in the tail gas discharged from the chemical deposition furnace via the tail gas pipeline, which is earlier than the decomposition of the hydrogen selenide in the vacuum pump in the background art, so that the hydrogen selenide contained in the tail gas entering the downstream mechanical pump and the tail gas absorption tower is greatly reduced, so that even if the hydrogen selenide contained in the tail gas is partially decomposed into elemental selenium in the mechanical pump, the degree of pollution of the pump oil by the generated elemental selenium is greatly reduced, thereby greatly prolonging the continuous stable working time of the pump oil to meet the CVD zinc selenide production, and the CVD zinc selenide production can be applied for a longer time, the amount of selenide dregs generated by the tail gas absorption tower 30 when treating the hydrogen selenide in the tail gas is greatly reduced, the time for regular salvage is greatly prolonged, and the artificial treatment cost is greatly reduced.

[0008] In addition, in the hydrogen selenide tail gas treatment device and the CVD zinc selenide production system according to the present disclosure, solid powder (for example, graphite powder from a graphite deposition plate used in a deposition chamber, zinc selenide powder from the deposition chamber) contained in the tail gas passing through the heating decomposition mechanism is filtered by the primary filter, the tail gas containing decomposed selenium vapor after passing through the primary filter is cooled by the selenium cooling mechanism and the secondary filter, the selenium vapor is cooled into solid selenium powder, and the solid selenium powder is filtered, which not only realizes effective recovery of selenium, realizes recycling of selenium, and reduces material cost, but also reduces pollution of the solid powder in the tail gas to pump oil of a mechanical pump downstream and to absorption liquid of a tail gas absorption tower, and the degree of pollution of the solid powder to the pump oil is also greatly reduced, thereby greatly prolonging the continuous and stable working time of the pump oil to meet the CVD zinc selenide production, and the absorption liquid in the tail gas absorption tower can work effectively for a longer time, and the absorption liquid replacement time is prolonged. BRIEF DESCRIPTION OF DRAWINGS

[0009] Figure 1 is a schematic diagram of a CVD zinc selenide production system according to the present disclosure.

[0010] Figure 2 is Figure 1 a CVD zinc selenide production system of

[0011] Figure 3 is Figure 2 a cooling plate of the selenium cooling mechanism of

[0012] In the drawings, the reference signs are explained as follows:

[0013] 1000 CVD zinc selenide production system 2 primary filter

[0014] D1 up-down direction 21 primary filter cloth bag

[0015] D2 left-right direction 22 upper heat insulation layer

[0016] 100 chemical deposition furnace 23 lower cooling layer

[0017] 100a tail gas pipeline 24 vertical support pipe

[0018] 200 mechanical pump 3 selenium cooling mechanism

[0019] 300 tail gas absorption tower 31 box body

[0020] 300a tower body 32 gas inlet

[0021] I inlet 33 cooling plate

[0022] E outlet 331 base

[0023] 300b absorption liquid circulating tank 331a water inlet

[0024] 300c spray head 331b water outlet

[0025] 300d filter filler 332 partition

[0026] 500 oil mist separation device 34 gas outlet

[0027] 600 condensation recovery device 35 thermocouple

[0028] 700 fan 36 thermal insulation material

[0029] 400 CVD zinc selenide production hydrogen selenide tail gas treatment device 4 secondary filter

[0030] 1 heating decomposition mechanism 41 filter tower

[0031] 11 thermal insulation layer 42 secondary filter bag

[0032] 12 thermocouple 43 pipeline

[0033] 13 heater DETAILED DESCRIPTION

[0034] The accompanying drawings illustrate embodiments of the present disclosure and, it is to be understood that the disclosed embodiments are merely examples of the present disclosure, the present disclosure can be implemented in various forms, therefore, the specific details disclosed herein should not be interpreted as limiting, but merely as a basis for the claims and as an illustrative basis for teaching those skilled in the art to implement the present disclosure in various ways.

[0035] [CVD zinc selenide production hydrogen selenide tail gas treatment device]

[0036] Reference Figures 1 to 3The CVD zinc selenide production hydrogen selenide tail gas treatment device 400 according to the present disclosure is used to be installed between the tail gas pipeline 100a of the chemical deposition furnace 100 for CVD zinc selenide growth using zinc and hydrogen selenide, and the mechanical pump 200 and the tail gas absorption tower 300 using pump oil vacuum pumping. The CVD zinc selenide production hydrogen selenide tail gas treatment device 400 comprises a heating decomposition mechanism 1, a primary filter 2, a selenium cooling mechanism 3, and a secondary filter 4. The heating decomposition mechanism 1 is arranged around the tail gas pipeline 100a of the chemical deposition furnace 100, and is used to heat the tail gas containing hydrogen selenide in the tail gas pipeline 100a to decompose the hydrogen selenide into hydrogen gas and selenium vapor. The primary filter 2 is connected to the end of the tail gas pipeline 100a, and is used to at least filter the solid powder contained in the tail gas passing through the heating decomposition mechanism 1. The selenium cooling mechanism 3 is connected to the end of the tail gas pipeline 100a, and is used to at least receive the tail gas containing decomposed selenium vapor from the tail gas pipeline 100a and passing through the primary filter 2, and cool the selenium vapor in the received tail gas into solid selenium powder. The secondary filter 4 is connected between the upstream selenium cooling mechanism 3 and the downstream mechanical pump 200 and tail gas absorption tower 300 using pump oil vacuum pumping, and is used to receive the tail gas containing solid selenium powder from the selenium cooling mechanism 3, filter and recover the powder, and discharge the tail gas after powder filtering and recovery to the downstream mechanical pump 200 and tail gas absorption tower 300 using pump oil vacuum pumping.

[0037] In the CVD zinc selenide production hydrogen selenide tail gas treatment device 400 according to the present disclosure, the heating decomposition mechanism 1 is used to decompose the hydrogen selenide in the tail gas discharged from the chemical deposition furnace 100 via the tail gas pipeline 100a, which is earlier than the decomposition of hydrogen selenide in the vacuum pump in the background art. Thus, the hydrogen selenide contained in the tail gas entering the downstream mechanical pump 200 and tail gas absorption tower 300 is greatly reduced, so that even if the hydrogen selenide contained in the tail gas is partially decomposed into elemental selenium in the mechanical pump 200, the degree of pollution of the pump oil by the generated elemental selenium is greatly reduced, thereby greatly extending the continuous stable working time of the pump oil to meet the CVD zinc selenide production, and thereby being suitable for longer CVD zinc selenide production. The amount of selenide dregs generated by the tail gas absorption tower 300 when treating hydrogen selenide in the tail gas is greatly reduced, the time for regular salvage is greatly extended, and the labor cost for manual treatment is greatly reduced.

[0038] In addition, in the hydrogen selenide tail gas treatment device 400 for producing CVD zinc selenide according to the present disclosure, the solid powder contained in the tail gas passing through the heating and decomposing mechanism 1 (for example, graphite powder from the graphite deposition plate used in the deposition chamber 200, zinc selenide powder from the deposition chamber 200) is filtered by the primary filter 2, the tail gas containing decomposed selenium vapor after passing through the primary filter 2 is cooled by the selenium cooling mechanism 3 and the secondary filter 4, the selenium vapor is cooled into solid selenium powder, and the solid selenium powder is filtered. Not only is the effective recovery of selenium achieved, but also the reuse of selenium and the reduction of material costs are achieved. In addition, the pollution of the solid powder in the tail gas to the pump oil of the downstream mechanical pump 200 and the absorption liquid of the tail gas absorption tower 300 is reduced. Similarly, the degree of pollution of the solid powder to the pump oil is greatly reduced, thereby greatly prolonging the continuous and stable working time of the pump oil to meet the production of CVD zinc selenide. The absorption liquid in the tail gas absorption tower 300 can work more effectively for a longer time, and the replacement time of the absorption liquid is prolonged.

[0039] Referring to Figure 1 In an example, the heating and decomposing mechanism 1 includes an insulation layer 11, a thermocouple 12, and a heater 13. The insulation layer 11 wraps the tail gas pipeline 100a, and the insulation layer 11 is used to insulate the tail gas pipeline 100a. The thermocouple 12 is disposed through the insulation layer 11 and the tail gas pipeline 100a, and the thermocouple 12 is used to measure the temperature of the tail gas in the tail gas pipeline 100a. The heater 13 is disposed outside the insulation layer 11, and the heater 13 is used to control the temperature of the tail gas pipeline 100a above the melting point of selenium from the outside of the insulation layer 11 based on the temperature measured by the thermocouple 12. The melting point of selenium is 217°C, the decomposition temperature of hydrogen selenide is 160°C, and the temperature range of the temperature control heating of the heater 13 is above the melting point of selenium. In this way, on the one hand, the decomposition of hydrogen selenide is ensured, and on the other hand, the formation of selenium vapor is ensured.

[0040] As Figure 1 shown, in an example, the insulation layer 11 is a one-piece; the heater 13 is a plurality of heaters 13, and the plurality of heaters 13 are spaced apart from each other to segmentally heat the tail gas pipeline 100a; and the thermocouple 12 is a plurality of thermocouples 12, and each thermocouple 12 is disposed corresponding to one heater 13. The use of segmental heating can more accurately control the temperature of the entire length of the tail gas pipeline 100a, so that the hydrogen selenide in the tail gas is decomposed in the entire length of the tail gas pipeline 100a.

[0041] As Figure 1As shown, in an example, the primary filter 2 includes a primary filter cloth bag 21, an upper heat preservation layer 22, and a lower cooling layer 23. The open end of the primary filter cloth bag 21 is connected to the end of the tail gas pipeline 100a. The upper heat preservation layer 22 is arranged around the upper portion of the primary filter cloth bag 21, and is used to preserve the temperature of the tail gas containing the decomposed selenium vapor after passing through the primary filter 2 before entering the selenium cooling mechanism 3. The lower cooling layer 23 is arranged around the lower portion of the primary filter cloth bag 21, and is used to cool the tail gas in the primary filter cloth bag 21 so that the selenium vapor is cooled into selenium powder and recovered in the primary filter cloth bag 21. Thus, the primary filter 2 also achieves partial filtration of the selenium vapor in the tail gas. Further, the upper heat preservation layer 22 and the lower cooling layer 23 are spaced apart in the up-down direction D1, thereby avoiding interference between the heat preservation and cooling functions. The lower cooling layer 23 can be externally supplied with flowing cooling water to achieve cooling. Similarly, as shown in Figure 1 As shown, a thermocouple 12 can be arranged at the upper heat preservation layer 22, so that the temperature at the upper heat preservation layer 22 does not cause the selenium vapor to condense into selenium powder and the portion of the primary filter cloth bag 21 corresponding to the upper heat preservation layer 22 is as much as possible as a path for the decomposition of hydrogen selenide, thereby further reducing the amount of hydrogen selenide contained in the tail gas entering the downstream mechanical pump 200 and the tail gas absorption tower 300. That is, a flow is achieved in the primary filter cloth bag 21 of the primary filter 2, part of the tail gas will enter the selenium cooling mechanism 3, and another part of the tail gas will remain in the primary filter cloth bag 21 and move downward to the position of the lower cooling layer 23.

[0042] As shown in Figure 1 In an example, the primary filter 2 further includes a vertical support pipe 24. The upper end of the vertical support pipe 24 is fixedly and connectively installed to the end of the tail gas pipeline 100a. The primary filter cloth bag 21, the upper heat preservation layer 22, and the lower cooling layer 23 are arranged in the vertical support pipe 24. The selenium cooling mechanism 3 is installed on the vertical support pipe 24 at the position of the upper heat preservation layer 22. Thus, the installation structure of the primary filter cloth bag 21 and the arrangement of the upper heat preservation layer 22 and the lower cooling layer 23 are simplified.

[0043] Referring to Figure 1 , the selenium cooling mechanism 3 includes a box body 31, an air inlet 32, a plurality of cooling plates 33, and an air outlet 34. The air inlet 32 is arranged on the box body 31 and is connected to the end of the tail gas pipeline 100a (specifically, the top of the vertical support pipe 24 in Figure 1 ), and is used to receive the tail gas from the tail gas pipeline 100a and passing through the primary filter 2 (specifically, the primary filter cloth bag 21 in Figure 1The tail gas containing decomposed selenium vapor after the primary filtering bag 21 is supplied into the box 31. A plurality of cooling plates 33 are arranged in the box 31 for cooling the selenium vapor in the gas entering into the box 31 into solid selenium powder. An outlet 34 is arranged on the box 31 and connected to the secondary filter 4 for discharging the tail gas containing solid selenium powder cooled by the plurality of cooling plates 33 in the box 31 to the secondary filter 4. The arrangement of the plurality of cooling plates 33 is advantageous to improve the efficiency and amount of cooling the selenium vapor into solid selenium powder. In addition, the space between the inlet 32 and the cooling plate 33 closest to the inlet 32 is also a path for the decomposition of hydrogen selenide, thereby further reducing the amount of hydrogen selenide contained in the tail gas entering into the downstream mechanical pump 200 and the tail gas absorption tower 300.

[0044] Further, in order to monitor the temperature of the selenium cooling mechanism 3, as shown in Figure 1 and Figure 2 , the selenium cooling mechanism 3 further comprises a plurality of thermocouples 35 for measuring the temperature of different parts in the box 31. Thus, the overall cooling effect of the selenium cooling mechanism 3 in the box 31 is ensured.

[0045] Specifically, as described in Figure 3 , each cooling plate 33 comprises a base 331 and a partition 332. The base 331 is used to be mounted (e.g. by screws, for detachable replacement) on the corresponding wall of the box 31 in the up-down direction D1, and has a water inlet 331a and a water outlet 331b for the flow of cooling medium (e.g. but not limited to water) and an internal passage (not shown). The partition 332 is erected on the base 331 and is cooled by the cooling medium of the base 331.

[0046] The layout of the plurality of cooling plates 33 can be flexibly arranged. As shown in Figure 1 and Figure 2 , the plurality of cooling plates 33 are spaced apart from each other in the left-right direction D2 and arranged in cross in the up-down direction D1, so that the inlet 32, the plurality of cooling plates 33 and the side walls of the box 31 in the left-right direction D2, the plurality of cooling plates 33, and the outlet 34 together form a meandering channel. The meandering channel effectively increases the length of the path of the tail gas flow, thereby greatly improving the efficiency and amount of cooling the selenium vapor into solid selenium powder.

[0047] As shown in Figure 1 and Figure 2 , the plurality of cooling plates 33 are arranged in the box 31 in the up-down direction D1 and in the left-right direction D2, so that the inlet 32, the plurality of cooling plates 33 and the side walls of the box 31 in the left-right direction D2, the plurality of cooling plates 33, and the outlet 34 together form a meandering channel. The meandering channel effectively increases the length of the path of the tail gas flow, thereby greatly improving the efficiency and amount of cooling the selenium vapor into solid selenium powder.As shown, in an example, the heights of the cooling plates 33 extending upwardly from the bottom wall of the box 31 are the same; the heights of at least some of the cooling plates 33 extending downwardly from the top wall of the box 31 increase successively from the side of the gas inlet 32 to the side of the gas outlet 34. This makes the spacing between the cooling plates 33 extending downwardly from the top wall of the box 31 and the bottom wall of the box 31 decrease successively, the resistance of the flow of the tail gas at these cooling plates 33 where the flow of the tail gas reverses gradually increases, and the flow rate of the tail gas gradually decreases, thereby improving the efficiency and the amount of the selenium vapor cooling into solid selenium powder.

[0048] In an example, the surface of each cooling plate 33 is coated with graphite milk (not shown). The graphite milk can serve as an isolation layer to prevent corrosion of the cooling plate by hydrogen selenide and the like, and facilitate selenium recovery. This facilitates cleaning of the cooling plate and saves manpower and resources.

[0049] As shown in Figure 1 and Figure 2 , the selenium cooling mechanism 3 further comprises a thermal insulation material 36 wrapped on the outer surface of the box 31. In this way, the cooling temperature in the box 31 can be unaffected by the external environment.

[0050] Referring to Figure 1 , in an example, the secondary filter 4 comprises a filter tower 41 and a secondary filter cloth bag 42. The filter tower 41 is connected between the upstream selenium cooling mechanism 3 and the downstream mechanical pump 200 using pump oil to create a vacuum and the tail gas absorption tower 300, and the filter tower 41 is used to receive the tail gas containing solid selenium powder from the selenium cooling mechanism 3. The secondary filter cloth bag 42 is arranged in the filter tower 41, and the secondary filter cloth bag 42 is used to filter the tail gas containing solid selenium powder from the selenium cooling mechanism 3 received by the filter tower 41 to filter the solid selenium powder and discharge the filtered tail gas to the downstream mechanical pump 200 using pump oil to create a vacuum and the tail gas absorption tower 300. As shown in Figure 1 , the number of secondary filter cloth bags 42 in the filter tower 41 is multiple, thereby adapting to the long-time continuous work of the CVD zinc selenide production. For example, the filter tower 41 is multiple, and the multiple filter towers 41 are connected to each other by a pipeline 43, thereby adapting to the long-time continuous work of the CVD zinc selenide production.

[0051] [CVD zinc selenide production system]

[0052] Referring to Figure 1 , the CVD zinc selenide production system 1000 according to the present disclosure comprises a chemical deposition furnace 100 for CVD zinc selenide growth using zinc and hydrogen selenide, a mechanical pump 200 using pump oil to create a vacuum, and a tail gas absorption tower 300, the top of the chemical deposition furnace 100 is provided with a tail gas pipeline 100a, the tail gas pipeline 100a connects the mechanical pump 200 and the tail gas absorption tower 300, and the CVD zinc selenide production system 1000 further comprises the aforementioned CVD zinc selenide production hydrogen selenide tail gas treatment device 400.

[0053] The features, effects, operations, etc. of the hydrogen selenide tail gas treatment device 400 for CVD zinc selenide production are as previously described and will not be repeated here.

[0054] Referring to Figure 1 In an example, the CVD zinc selenide production system 1000 further comprises an oil mist separation device 500 and a condensation recovery device 600. The oil mist separation device 500 is connected downstream of the mechanical pump 200, and is configured to receive the tail gas discharged from the mechanical pump 200 and separate the oil mist of the pump oil contained in the tail gas from the tail gas. The condensation recovery device 600 is connected between the oil mist separation device 500 and the tail gas absorption tower 300, and is configured to receive the tail gas separated from the oil mist separation device 500 and further cool and recover the pump oil contained in the tail gas. For example, the oil mist separation device 500 employs filter cotton to filter the oil mist of the pump oil contained in the tail gas to separate from the tail gas.

[0055] Referring to Figure 1 In an example, the tail gas absorption tower 300 comprises a tower body 300a, an absorption liquid circulating tank 300b, a spray head 300c, and a filter packing 300d. The tower body 300a is connected to the condensation recovery device 600, and has an inlet I and an outlet E. The inlet I is arranged at the lower part of the tower body 300a and is configured to receive the tail gas discharged from the condensation recovery device 600. The outlet E is arranged at the top of the tower body 300a. The absorption liquid circulating tank 300b is configured to hold the absorption liquid. The spray head 300c is arranged inside the tower body 300a and is connected to the absorption liquid circulating tank 300b, and is configured to spray the absorption liquid from the absorption liquid circulating tank 300b downward to counter-currently contact with the upward flowing tail gas in the tower body 300a to absorb the hydrogen selenide in the tail gas. The absorption liquid circulating tank 300b is further configured to hold the absorption liquid that absorbs the hydrogen selenide. The filter packing 300d is arranged above the spray head 300c and is configured to filter the tail gas after counter-currently contacting with the absorption liquid. The outlet E is configured to discharge the tail gas from the tail gas absorption tower 300. The absorption liquid is, for example, a lye of sodium hydroxide.

[0056] Referring to Figure 1 In an example, the CVD zinc selenide production system 1000 further comprises a fan 700. The fan 700 is connected to the outlet E of the tower body 300a and is configured to discharge the tail gas from the absorption tower. The fan 700 and the mechanical pump 200 are further configured to together provide vacuum extraction for the CVD zinc selenide production system 1000.

[0057] The foregoing detailed description has set forth various exemplary embodiments of the systems and / or methods via the use of a number of acronyms and / or technical terms. No limitation of the disclosed systems and / or methods is intended by the use of an acronym and / or technical term for a non- corresponding conventional term, unless specifically so stated. By way of illustration, although a particular embodiment of the present systems and / or methods can be disclosed with reference to an example involving a particular implementation and configurations, this description is not intended to limit the scope of the systems and / or methods disclosed herein, but rather is intended to highlight typical components associated with such an implementation and configurations. It is further noted that the specific arrangements and / or order of steps described in the embodiments will vary for other embodiments. It is therefore intended that the systems and / or methods disclosed herein be considered in a descriptive sense only and not limiting.

Claims

1. A device for treating hydrogen selenide off-gas from CVD zinc selenide production, characterized in that The CVD zinc selenide production hydrogen selenide tail gas treatment device (400) is used for being installed between the tail gas pipeline (100a) of the chemical deposition furnace (100) for growing CVD zinc selenide by using zinc and hydrogen selenide, the mechanical pump (200) for pumping oil to vacuumize and the tail gas absorption tower (300), The CVD zinc selenide production hydrogen selenide tail gas treatment device (400) comprises a heating and decomposing mechanism (1), a primary filter (2), a selenium cooling mechanism (3) and a secondary filter (4); The heating and decomposing mechanism (1) is arranged around the tail gas pipeline (100a) of the chemical deposition furnace (100), and is used for heating the tail gas containing hydrogen selenide in the tail gas pipeline (100a) to decompose the hydrogen selenide into hydrogen gas and selenium vapor; The primary filter (2) is connected to the end of the tail gas pipeline (100a), and is used for at least filtering the solid powder contained in the tail gas passing through the heating and decomposing mechanism (1); The selenium cooling mechanism (3) is connected to the end of the tail gas pipeline (100a), and is used for at least receiving the tail gas containing the decomposed selenium vapor from the tail gas pipeline (100a) and passing through the primary filter (2) and cooling the selenium vapor in the received tail gas into solid selenium powder; The secondary filter (4) is connected between the upstream selenium cooling mechanism (3) and the downstream mechanical pump (200) for pumping oil to vacuumize and the tail gas absorption tower (300), and is used for receiving the tail gas containing the solid selenium powder from the selenium cooling mechanism (3), filtering and recovering the powder, discharging the tail gas after the powder filtering and recovering to the downstream mechanical pump (200) for pumping oil to vacuumize and the tail gas absorption tower (300).

2. The CVD zinc selenide production hydrogen selenide tail gas treatment device according to claim 1, wherein The heating and decomposing mechanism (1) comprises a heat insulation layer (11), a thermocouple (12) and a heater (13); The heat insulation layer (11) wraps the tail gas pipeline (100a), and is used for heat insulation of the tail gas pipeline (100a); The thermocouple (12) is arranged through the heat insulation layer (11) and the tail gas pipeline (100a), and is used for measuring the temperature of the tail gas in the tail gas pipeline (100a), The heater (13) is arranged outside the heat insulation layer (11), and is used for temperature control heating of the tail gas pipeline (100a) above the melting point of selenium from outside the heat insulation layer (11) based on the temperature measured by the thermocouple (12).

3. The CVD zinc selenide production hydrogen selenide tail gas treatment device according to claim 2, wherein The heat insulation layer (11) is an integrated single piece; The heater (13) is a plurality of heaters (13) which are spaced apart from each other to segmentally heat the tail gas pipeline (100a); The thermocouple (12) is a plurality of thermocouples, each thermocouple corresponding to one heater (13).

4. The CVD zinc selenide production hydrogen selenide tail gas treatment device according to claim 1, wherein The primary filter (2) comprises a primary filter cloth bag (21), an upper heat insulation layer (22) and a lower cooling layer (23); The open end of the primary filter cloth bag (21) is connected to the end of the tail gas pipeline (100a), The upper heat preservation layer (22) is arranged around the upper part of the primary filter cloth bag (21), and the upper heat preservation layer (22) is used for heat preservation of the tail gas containing decomposed selenium vapor after passing through the primary filter (2) before entering the selenium cooling mechanism (3); The lower cooling layer (23) is arranged around the lower part of the primary filter cloth bag (21), and the lower cooling layer (23) is used for cooling the tail gas in the primary filter cloth bag (21) to cool the selenium vapor into selenium powder and recycle in the primary filter cloth bag (21).

5. The CVD zinc selenide production hydrogen selenide tail gas treatment device according to claim 1, wherein The selenium cooling mechanism (3) comprises a box body (31), an air inlet (32), a plurality of cooling plates (33), and an air outlet (34); The air inlet (32) is arranged on the box body (31) and connected to the end of the tail gas pipeline (100a), and is used for receiving the tail gas containing decomposed selenium vapor from the tail gas pipeline (100a) and passing through the primary filter (2) and supplying into the box body (31); The plurality of cooling plates (33) are arranged in the box body (31), and are used for cooling the selenium vapor in the gas entering the box body (31) into solid selenium powder; The air outlet (34) is arranged on the box body (31) and connected to the secondary filter (4), and is used for discharging the tail gas containing solid selenium powder cooled by the plurality of cooling plates (33) in the box body (31) to the secondary filter (4).

6. The CVD zinc selenide production hydrogen selenide tail gas treatment device according to claim 5, wherein The selenium cooling mechanism (3) further comprises a plurality of thermocouples (35) for measuring the temperature of different parts in the box body (31).

7. The CVD zinc selenide production hydrogen selenide tail gas treatment device according to claim 5, wherein Each cooling plate (33) comprises a base (331) and a partition plate (332); The base (331) is used for being mounted on the corresponding wall of the box body (31) in the up-down direction (D1), and has a water inlet (331a) and a water outlet (331b) for the cooling medium to flow and an internal passage; The partition plate (332) is vertically arranged on the base (331) and is cooled by the cooling medium of the base (331).

8. The CVD zinc selenide production hydrogen selenide tail gas treatment device according to claim 5, wherein The plurality of cooling plates (33) are spaced apart from each other in the left-right direction (D2) and arranged in cross in the up-down direction (D1), so that the air inlet (32), the plurality of cooling plates (33) and the side walls of the box body (31) in the left-right direction (D2), the plurality of cooling plates (33), and the air outlet (34) together form a winding channel.

9. The CVD zinc selenide production hydrogen selenide tail gas treatment device according to claim 8, wherein The heights of the cooling plates (33) extending upward from the bottom wall of the box body (31) are the same. The height of at least some of the cooling plates (33) extending downward from the top wall of the box (31) increases in turn from the gas inlet (32) side to the gas outlet (34) side.

10. The hydrogen selenide tail gas treatment device for CVD zinc selenide production according to claim 5, wherein, The surface of each cooling plate (33) is coated with graphite emulsion.

11. The hydrogen selenide tail gas treatment device for CVD zinc selenide production according to claim 5, wherein, The selenium cooling mechanism (3) further comprises a thermal insulation material (36) surrounding the outer surface of the box (31).

12. The hydrogen selenide tail gas treatment device for CVD zinc selenide production according to claim 1, wherein, The secondary filter (4) comprises a filter tower (41) and a secondary filter bag (42); The filter tower (41) is connected between the upstream selenium cooling mechanism (3) and the downstream mechanical pump (200) and the tail gas absorption tower (300) using pump oil to create vacuum, and is used to receive the tail gas containing solid selenium powder from the selenium cooling mechanism (3); The secondary filter bag (42) is arranged in the filter tower (41), and is used to filter the solid selenium powder in the tail gas received by the filter tower (41) from the selenium cooling mechanism (3) and discharge the filtered tail gas to the downstream mechanical pump (200) and the tail gas absorption tower (300) using pump oil to create vacuum.

13. A CVD zinc selenide production system, comprising a chemical deposition furnace (100) for growing CVD zinc selenide using zinc and hydrogen selenide, a mechanical pump (200) using pump oil to create vacuum, and a tail gas absorption tower (300), wherein the top of the chemical deposition furnace (100) is provided with a tail gas pipeline (100a) connected to the mechanical pump (200) and the tail gas absorption tower (300). The CVD zinc selenide production system (1000) further comprises the hydrogen selenide tail gas treatment device (400) according to any one of claims 1-12.

14. The CVD zinc selenide production system according to claim 13, wherein, The CVD zinc selenide production system (1000) further comprises an oil mist separation device (500) and a condensation recovery device (600). The oil mist separation device (500) is connected downstream of the mechanical pump (200), and is used to receive the tail gas discharged by the mechanical pump (200) and separate the oil mist of the pump oil contained in the tail gas from the tail gas. The condensation recovery device (600) is connected between the oil mist separation device (500) and the tail gas absorption tower (300), and is used to receive the tail gas separated by the oil mist separation device (500) and further cool and recover the pump oil contained in the tail gas.

15. The CVD zinc selenide production system according to claim 13, wherein, The CVD zinc selenide production system (1000) further comprises a fan (700). A fan (700) is connected to the outlet (E) of the tower body (300a) for discharging the tail gas from the absorption tower, and the fan (700) and the mechanical pump (200) are also used together to provide vacuum extraction for the CVD zinc selenide production system (1000).

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