Semiconductor packaging structure with double-sided heat dissipation

By setting double-sided heat sinks and welding platforms on both ends of the semiconductor packaging structure, the problem that traditional packaging structures cannot meet high heat dissipation performance is solved, achieving a 10% to 20% improvement in heat dissipation performance and an increase in welding area, thereby improving product performance and market competitiveness.

CN223471596UActive Publication Date: 2025-10-24WUXI ELECTRICAL UNIT INTEGRATION CO LTD
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Patent Information

Application Number
CN202422851394.3
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2024-11-21
Publication Date
2025-10-24
Estimated Expiration
2034-11-21

AI Technical Summary

Technical Problem

Traditional semiconductor packaging structures cannot meet the requirements for high heat dissipation performance, especially as power devices continue to increase in size.

Method used

The packaging structure employs a double-sided heat dissipation design. Heat dissipation surfaces are provided on both ends of the product. First and second heat sinks are used, and a soldering platform and a bonding platform are provided on one side of the base island. The pins extend to the outside and the components are connected by solder, ensuring that the heat sink is flush with or higher than the surface of the plastic package.

Benefits of technology

It improves heat dissipation performance by 10% to 20%, increases the welding area, reduces the probability of poor soldering, and enhances product performance and market competitiveness.

✦ Generated by Eureka AI based on patent content.

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Abstract

The utility model discloses a double-sided heat dissipation semiconductor packaging structure, which relates to the technical field of semiconductor packaging and comprises a first heat dissipation sheet and a plastic package body, a base island, a chip and a jumper wire are sequentially arranged on one side of the first heat dissipation sheet, a second heat dissipation sheet is arranged on one side, far away from the first heat dissipation sheet, of the jumper wire, and the second heat dissipation sheet is arranged on the plastic package body. One end of the jumper wire is connected with the source electrode of the chip, the plastic package body wraps the first cooling fin, the base island, the chip and the jumper wire, and the sides, away from each other, of the first cooling fin and the second cooling fin are exposed; the heat dissipation surfaces are arranged on the two end faces of the product, a double-face heat dissipation packaging structure is adopted, the heat dissipation surfaces are additionally arranged on the front face of the product, the area of the heat dissipation surfaces accounts for 25%-35% of the area of the front face, the heat dissipation performance can be improved by 10%-20%, and in order to ensure the heat dissipation effect and the requirements of client application ends, the heat dissipation effect is improved. The sides, far away from each other, of the first cooling fins and the second cooling fins are flush with or higher than the surface of the plastic package body on the peripheral side.
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Description

TECHNICAL FIELD

[0001] The utility model relates to the technical field of semiconductor packaging, specifically to a semiconductor packaging structure of double -sided heat dissipation. BACKGROUND

[0002] Semiconductor power devices have been widely used in new energy vehicles, household appliances and industrial control fields, with the power of products being more and more large, the requirement of heat dissipation performance is also more and more high, and higher requirement is put forward to the packaging structure of products.

[0003] The traditional semiconductor packaging adopts single -sided heat dissipation or full plastic -encapsulated structure, and this structure is simple and mature technology, but cannot meet the demand of higher heat dissipation.

[0004] Therefore, a semiconductor packaging structure of double -sided heat dissipation is needed to solve the above -mentioned problems. INVENTION CONTENTS

[0005] In view of the problems in the prior art, the utility model solves the problem by the following technical structure.

[0006] In order to achieve the above -mentioned purpose, the utility model adopts the following technical scheme:

[0007] A semiconductor packaging structure of double -sided heat dissipation, including: first fin and plastic -encapsulated body, the side of first fin is sequentially provided with base island, chip and jumper, the side, away from first fin, of jumper is provided with second fin, one end of jumper is connected with the source electrode of chip, plastic -encapsulated body is wrapped first fin, base island, chip and jumper, and the side, away from each other, of first fin and second fin is exposed.

[0008] Further characterized in that,

[0009] It further includes a welding platform arranged on one side of the base island, and the suspended end of the jumper is connected with the welding platform.

[0010] It further includes a bonding wire and a bonding platform, the bonding platform is arranged in the plastic -encapsulated body, one end of the bonding wire is connected with the gate electrode of the chip, and the other end is connected with the bonding platform.

[0011] The welding platform and the bonding platform are provided with pins, and one end of the pin extends to the outside of the plastic -encapsulated body.

[0012] One side of the pin is embedded with a pressure -imprinting area.

[0013] The depth of the pressure -imprinting area is one -third to one -half of the thickness of the pin.

[0014] The side, close to the chip, of the jumper is provided with a welding surface, and a lock structure is arranged between the welding surface and the second fin.

[0015] The jumper and the source of the chip, the jumper and the welding platform, and the chip and the base island are connected by solder.

[0016] The solder is a lead-tin-silver alloy, a lead-tin alloy, a tin-silver-antimony alloy, a tin-silver alloy, or silver.

[0017] The side of the first and second heat sinks away from each other is flush with or higher than the surface of the plastic package.

[0018] The above structure of the utility model has the following beneficial effects:

[0019] The packaging structure with double-sided heat dissipation is adopted, the heat dissipation surface is added to the front surface of the product, the area of the heat dissipation surface accounts for 25% to 35% of the area of the front surface, the heat dissipation performance is improved by 10% to 20%, and the side of the first and second heat sinks away from each other is flush with or higher than the surface of the plastic package. BRIEF DESCRIPTION OF DRAWINGS

[0020] Figure 1 It is a structure front view of the embodiment;

[0021] Figure 2 It is a structure side view of the embodiment;

[0022] Figure 3 It is a structure sectional view of the embodiment;

[0023] Figure 4 It is a structure front view of the pin in the embodiment;

[0024] Figure 5 It is a structure side view of the pin in the embodiment;

[0025] Figure 6 It is a structure schematic view of the jumper in the embodiment.

[0026] In the figure: 1, first heat sink; 2, base island; 3, chip; 4, solder; 5, plastic package; 6, jumper; 61, second heat sink; 62, locking structure; 63, welding surface; 7, pin; 71, impression area; 8, bonding wire; 9, bonding platform; 10, welding platform. DETAILED DESCRIPTION

[0027] In order to help those skilled in the art better understand the present invention, the following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the embodiments described are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts should fall within the scope of protection of the present invention.

[0028] It should be noted that the terms "including" and "having" and any variations thereof in the specification and claims of the present invention and the above-mentioned drawings are intended to cover non-exclusive inclusions. For example, a process, method, apparatus, product or equipment that includes a series of steps or units is not necessarily limited to those steps or units clearly listed, but may include other steps or units that are not clearly listed or are inherent to these processes, methods, products or equipment.

[0029] The following is combined with Figures 1-6 This application is described in further detail.

[0030] like Figures 1-3 As shown, a semiconductor packaging structure with double-sided heat dissipation includes: a first heat sink 1, a plastic package 5, a bonding wire 8, a bonding platform 9 and a welding platform 10. A base island 2, a chip 3 and a jumper 6 are sequentially arranged on one side of the first heat sink 1. A second heat sink 61 is arranged on the side of the jumper 6 away from the first heat sink 1. One end of the jumper 6 is connected to the source of the chip 3. The plastic package 5 wraps the first heat sink 1, the base island 2, the chip 3 and the jumper 6. The sides of the first heat sink 1 and the second heat sink 61 away from each other are exposed. The welding platform 10 is arranged on one side of the base island 2. The suspended end of the jumper 6 is connected to the welding platform. The chip 3 is connected to the bonding platform 10, one end of the bonding wire 8 is connected to the gate of the chip 3, and the other end is connected to the bonding platform 9. In this way, by arranging heat dissipation surfaces (a first heat sink 1 and a second heat sink 61) on both end surfaces of the product, a double-sided heat dissipation packaging structure is adopted, and a heat dissipation surface is added to the front of the product, and its area accounts for 25% to 35% of the front area, which can improve the heat dissipation performance by 10% to 20%. In order to ensure the heat dissipation effect and the needs of the customer application end, the side where the first heat sink 1 and the second heat sink 61 are away from each other is flush with or higher than the surface of the plastic package 5 on the surrounding side.

[0031] like Figure 1 、 Figure 2 、 Figure 4 and Figure 5As shown, the welding platform 10 and the bonding platform 9 are both provided with pins 7, one end of the pin 7 extends to the outside of the plastic package 5, one side of the pin 7 is embedded with a stamping area 71, the depth of the stamping area 71 is one third to one half of the thickness of the pin 7, the width of the stamping area 71 is one third to one half of the width of the pin 7, so that the welding area can be increased by 10% to 20%, the probability of false welding is reduced, the special application requirements of customers are met, and the performance and market competitiveness of the product are further improved.

[0032] As shown in the drawings, Figure 3 and Figure 6 As shown, the jumper wire 6 is provided with a welding surface 63 on the side close to the chip 3, and a locking structure 62 is arranged between the welding surface 63 and the second heat dissipation fin 61, so that the jumper wire 6 adopts a three-layer structure design, the upper layer is the second heat dissipation fin 61, the middle layer is the protruding locking structure 62, and the lower layer is the welding surface 63, the thickness of the three layers can be equal or unequal, and the thickness ratio is preferably 3:3:4.

[0033] As shown in the drawings, Figure 2 The jumper wire 6 and the source electrode of the chip 3, the jumper wire 6 and the welding platform 10, and the chip 3 and the base island 2 are connected through the solder 4, the solder 4 forms a bonding force through high-temperature melting and then cooling and solidification, and the corresponding components are fixed, and the material of the solder 4 can be selected from lead-tin-silver alloy, lead-tin alloy, tin-silver-antimony alloy, tin-silver alloy or silver.

[0034] In summary, by arranging the heat dissipation surface on both end surfaces of the product, the double-sided heat dissipation packaging structure is adopted, the heat dissipation surface is increased on the front surface of the product, the area of the heat dissipation surface accounts for 25% to 35% of the area of the front surface, the heat dissipation performance can be improved by 10% to 20%, and in order to ensure the heat dissipation effect and the requirements of the customer application end, the side of the first heat dissipation fin 1 and the second heat dissipation fin 61 away from each other is flush with or higher than the surface of the plastic package 5 on the periphery.

[0035] The above is only the preferred embodiment of the present application, and the present application is not limited to the above embodiments. It can be understood that other improvements and changes directly derived or thought by those skilled in the art without departing from the spirit and concept of the present application should be considered to be included in the protection scope of the present application.

Claims

1. A semiconductor package structure with double-sided heat dissipation, characterized in that, The application relates to a heat dissipation device. The heat dissipation device comprises a first heat dissipation fin (1) and a plastic package (5), the first heat dissipation fin (1) is sequentially provided with a base island (2), a chip (3) and a jumper wire (6) on one side, the jumper wire (6) is provided with a second heat dissipation fin (61) away from the one side of the first heat dissipation fin (1), one end of the jumper wire (6) is connected with a source electrode of the chip (3), the plastic package (5) wraps the first heat dissipation fin (1), the base island (2), the chip (3) and the jumper wire (6), and the first heat dissipation fin (1) and the second heat dissipation fin (61) are exposed on the sides away from each other.

2. The semiconductor package structure of claim 1, wherein: The jumper wire (6) is connected with a welding platform (10) provided on one side of the base island (2).

3. The semiconductor package structure of claim 2, wherein: The jumper wire (6) is connected with a welding platform (10) provided on one side of the base island (2).

4. The semiconductor package structure of claim 3, wherein: The jumper wire (6) is connected with a welding platform (10) provided on one side of the base island (2).

5. The semiconductor package structure of claim 4, wherein: The jumper wire (6) is connected with a welding platform (10) provided on one side of the base island (2).

6. The semiconductor package structure of claim 5, wherein: The jumper wire (6) is connected with a welding platform (10) provided on one side of the base island (2).

7. The semiconductor package structure of claim 1, wherein: The jumper wire (6) is connected with a welding platform (10) provided on one side of the base island (2).

8. The semiconductor package structure of claim 2, wherein: The jumper wire (6) is connected with a welding platform (10) provided on one side of the base island (2).

9. The semiconductor package structure of claim 8, wherein: The jumper wire (6) is connected with a welding platform (10) provided on one side of the base island (2).

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