Heat sink structure and semiconductor device with same

Abstract

The utility model provides a heat sink structure and a semiconductor device with the same. The heat sink structure comprises a base layer and a heat conduction layer. A first surface and a second surface which correspond to each other are arranged on the base layer, and a heat conduction layer is arranged on at least one of the first surface and the second surface. The reinforcing structure is arranged on part or all of the edge of the heat-conducting layer, and the reinforcing structure is attached to the base layer close to the heat-conducting layer, so that the edge of the heat-conducting layer and the base layer close to the heat-conducting layer can be supported, the connection strength of the heat-conducting layer and the base layer at the edge position is enhanced, and the bending resistance of the edge of the heat-conducting layer is improved. Further, by applying the heat sink structure in the semiconductor device, the service life of the semiconductor device can be effectively prolonged, and the connection strength of the heating element and the heat sink structure can be improved.

Description

Technical Field

[0001] This utility model relates to the field of semiconductors, specifically to a heat sink structure and a semiconductor device having the same. Background Technology

[0002] In the semiconductor technology field, heat sink structures are crucial for heat dissipation, transferring heat from heat-generating elements to the outside through conduction, convection, and radiation. Heat sinks typically consist of a heat-dissipating substrate and one or more functional layers. However, existing heat sink structures often suffer from insufficient connection strength between the substrate and the functional layers. In some cases, cracks may appear at the connection edges between the heat sink substrate and other functional layers, severely impacting the heat dissipation performance. During long-term use, friction with the surrounding environment or collisions with other components can cause wear at the connection edges between the substrate and functional layers. The resulting debris may then enter other devices, leading to further malfunctions. Utility Model Content

[0003] This invention addresses the aforementioned deficiencies in the prior art by providing a heat sink structure and a semiconductor device having the same, thereby solving at least one of the aforementioned technical problems.

[0004] A heat sink structure, comprising a base layer and a heat-conducting layer;

[0005] A first surface and a second surface are provided on the base layer, and a heat-conducting layer is provided on at least one of the first surface and the second surface; the projection of the heat-conducting layer on the base layer is located within the range of the base layer.

[0006] A reinforcing structure is provided on part or all of the edges of the heat-conducting layer, and the reinforcing structure is attached to the base layer near the edge of the heat-conducting layer to improve the bending resistance of the edge of the heat-conducting layer.

[0007] In some specific embodiments, the direction outward from the edge of the thermally conductive layer is a preset first direction; along the first direction, the thickness of the reinforcing structure decreases.

[0008] In some specific embodiments, the exposed surface of the reinforcing structure includes a concave or convex arcuate surface.

[0009] In some specific embodiments, the reinforcing structure includes a stepped structure, with the thickness of the stepped structure decreasing from the side near the edge of the heat-conducting layer to the side away from the edge of the heat-conducting layer. In practical applications, the direction from the side near the edge of the heat-conducting layer to the side away from the edge of the heat-conducting layer is parallel to a preset first direction.

[0010] In some specific embodiments, the exposed surface of the reinforcing structure includes a plane; the plane forms an angle with the plane of the base layer; the angle ranges from 12° to 45°. When the plane forms an angle with the plane of the base layer, the cross-section of the reinforcing structure can be a triangle.

[0011] In practical applications, the reinforcing structure can be connected to the entire range of the corresponding height on one side of the edge of the heat-conducting layer, or it can be connected to a portion of the corresponding height on one side of the edge of the heat-conducting layer.

[0012] In some specific embodiments, the thermally conductive layer includes a metal layer with a thermal conductivity ranging from 375 to 450 W / mK.

[0013] In practical applications, the thermally conductive layer is a conductor layer, and the base layer is an insulating layer.

[0014] In one specific embodiment, the substrate and conductor layer are a rectangular sheet structure. One or more conductor layers can be distributed on one side surface of the substrate. In practical applications, the projection of the conductor layer on the substrate is rectangular, that is, the conductor layer has four side edges. The reinforcing structure can be set on two opposite edges of the conductor layer, or it can be set on all edges or any one edge. This can achieve the structural reinforcement of part or all edges connecting the conductor layer and the substrate according to actual needs.

[0015] In one specific embodiment, two conductor layers are independently bonded to each other on one side surface of the substrate, and the edges of the two conductor layers are parallel to each other, with a gap region formed between the two conductor layers. In practical applications, a reinforcing structure can also be provided on the side of the two conductor layers away from the gap region.

[0016] In some specific embodiments, the thermally conductive layer includes a first thermally conductive layer and a second thermally conductive layer; one side of the first thermally conductive layer is connected to the second thermally conductive layer, and the other side is connected to the first or second surface of the substrate.

[0017] In some specific embodiments, the first thermally conductive layer includes one or more of a nickel plating layer, a gold plating layer, and a gold-tin plating layer;

[0018] The second thermally conductive layer includes one or more of the following: a copper layer, an aluminum layer, a silver layer, and a tungsten layer.

[0019] In practical applications, the first heat-conducting layer can be sequentially formed from the outside in with a gold-tin plating layer and a nickel plating layer. The second heat-conducting layer includes a copper layer. Copper has good heat dissipation and electrical conductivity; however, it is prone to oxidation during heating due to its susceptibility to reaction with oxygen in the air. By adding a nickel plating layer to the copper layer, not only can the surface smoothness and uniformity of the copper layer be improved, allowing for uniform heat transfer, but it can also prevent the diffusion of copper atoms at high temperatures, preventing copper oxidation and ensuring the stability of the heat sink structure. A gold-tin plating layer is further added on top of the nickel plating layer. The gold-tin plating layer has good wettability and can spread evenly, improving the solderability of the conductor layer and enabling reliable soldering between the conductor layer and external components.

[0020] In some specific embodiments, the substrate includes a silicon carbide layer and / or an aluminum nitride layer.

[0021] Secondly, a semiconductor device is proposed, comprising any of the heat sink structures described in the aforementioned technical solutions. In one specific embodiment, the semiconductor device includes a heat-generating element and a heat-dissipating medium, which are respectively connected to both sides of the heat sink structure. The heat-generating element includes a chip, and the heat-dissipating medium includes heat sink fins, thermal paste, or a thermal pad, etc.

[0022] Beneficial effects: This utility model provides a heat sink structure and a semiconductor device having the same. By providing a reinforcing structure on part or all of the edges of the heat-conducting layer, and the reinforcing structure being attached to the base layer near the heat-conducting layer, it can provide support for the edges of the heat-conducting layer and the base layer near the heat-conducting layer, strengthen the connection strength between the heat-conducting layer and the base layer at the edge, and improve the bending resistance of the edges of the heat-conducting layer. Attached Figure Description

[0023] To more clearly illustrate the technical solutions of the embodiments of this utility model, the drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of this utility model and should not be regarded as a limitation on the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0024] Figure 1 This is a cross-sectional structural diagram of this application;

[0025] Figure 2 This is another cross-sectional structural diagram of this application;

[0026] Figure 3 This is another cross-sectional structural diagram of this application;

[0027] Figure 4 This is another cross-sectional structural diagram of this application;

[0028] Figure 5 This is another cross-sectional structural diagram of this application.

[0029] The reference numerals in the attached figures are as follows: 1-base layer; 11-first surface; 12-second surface; 2-heat-conducting layer; 21-first heat-conducting layer; 22-second heat-conducting layer; 23-edge; 3-reinforcing structure; 31-arc surface; 32-stepped structure; 33-plane. Detailed Implementation

[0030] The following will describe the concept, specific structure and technical effects of this utility model clearly and completely with reference to the embodiments and accompanying drawings, so as to fully understand the purpose, features and effects of this utility model.

[0031] Various embodiments of the present invention will be described more fully below. The present invention may have various embodiments, and adjustments and changes may be made therein. However, it should be understood that there is no intention to limit the various embodiments of the present invention to the specific embodiments disclosed herein, but rather the present invention should be understood to cover all adjustments, equivalents, and / or alternatives falling within the spirit and scope of the various embodiments of the present invention.

[0032] In the following, the terms “comprising” or “may include”, which may be used in various embodiments of the present invention, indicate the presence of the disclosed functions, operations, or elements, and do not limit the addition of one or more functions, operations, or elements. Furthermore, as used in various embodiments of the present invention, the terms “comprising,” “having,” and their cognates are intended only to indicate a specific feature, number, step, operation, element, component, or combination of the foregoing, and should not be construed as primarily excluding the presence of one or more other features, numbers, steps, operations, elements, components, or combinations of the foregoing, or the possibility of adding one or more combinations of features, numbers, steps, operations, elements, components, or combinations of the foregoing.

[0033] In various embodiments of this utility model, the expression "or" or "at least one of A and / or B" includes any combination or all combinations of the words listed simultaneously. For example, the expression "A or B" or "at least one of A and / or B" may include A, may include B, or may include both A and B.

[0034] The terms used in the various embodiments of this utility model (such as "first," "second," etc.) may modify various constituent elements in the various embodiments, but do not limit the corresponding constituent elements. For example, the above terms do not limit the order and / or importance of the elements. The above terms are only used for the purpose of distinguishing one element from other elements. For example, a first user device and a second user device refer to different user devices, although both are user devices. For example, without departing from the scope of the various embodiments of this utility model, a first element may be referred to as a second element, and similarly, a second element may be referred to as a first element.

[0035] It should be noted that, in this utility model, unless otherwise explicitly specified and defined, terms such as "installation," "connection," and "fixation" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this utility model according to the specific circumstances.

[0036] In this utility model, those skilled in the art should understand that the terms indicating orientation or positional relationship in the text are based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this utility model and simplifying the description, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this utility model.

[0037] The terminology used in the various embodiments of this invention is for the purpose of describing particular embodiments only and is not intended to limit the various embodiments of this invention. As used herein, the singular form is intended to include the plural form as well, unless the context clearly indicates otherwise. Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which the various embodiments of this invention pertain. The terms (such as those defined in a generally used dictionary) are to be interpreted as having the same meaning as in the context of the relevant technical field and are not to be interpreted as having an idealized or overly formal meaning, unless clearly defined in the various embodiments of this invention.

[0038] Example 1

[0039] This embodiment provides a heat sink structure, the specific solution of which is as follows:

[0040] A heat sink structure includes a base layer 1 and a heat-conducting layer 2;

[0041] A first surface 11 and a second surface 12 are provided on the base layer 1, and a heat-conducting layer 2 is provided on at least one of the first surface 11 and the second surface 12; the projection of the heat-conducting layer 2 on the base layer 1 is located within the range of the base layer 1.

[0042] A reinforcing structure 3 is provided on part or all of the edges of the heat-conducting layer 2, and the reinforcing structure 3 is attached to the base layer 1 near the edge of the heat-conducting layer 2 to improve the bending resistance of the edge of the heat-conducting layer 2.

[0043] In some specific embodiments, the direction outward from the edge of the heat-conducting layer 2 is a preset first direction; along the first direction, the thickness of the reinforcing structure 3 decreases. The preset first direction is as follows: Figure 1 As shown in direction A. It should be noted that this embodiment does not specifically limit the shape of the edge of the heat-conducting layer 2 or the specific shape of the reinforcing structure 3. As long as the thickness of the reinforcing structure 3 can decrease along the preset first direction, the reinforcing structure 3 can have various shapes; it can be a regular shape or an irregular shape, such as... Figure 3 as well as Figure 4 As shown.

[0044] In some specific embodiments, the exposed surface of the reinforcing structure 3 includes a concave or convex arcuate surface 31, specifically as follows: Figure 1 As shown.

[0045] In some specific embodiments, the reinforcing structure 3 includes a stepped structure 32, the thickness of which decreases along the direction from the side near the edge of the heat-conducting layer 2 to the side away from the edge of the heat-conducting layer 2. In practical applications, the direction from the side near the edge of the heat-conducting layer 2 to the side away from the edge of the heat-conducting layer 2 is parallel to a preset first direction, specifically as follows: Figure 2 As shown.

[0046] In some specific embodiments, the exposed surface of the reinforcing structure 3 includes a plane 33; the plane 33 forms an angle with the plane 33 where the base layer 1 is located; the angle ranges from 12° to 45°. Wherein, the angle is as follows... Figure 3 As shown by angle α. When there is an angle between plane 33 and the plane containing the base layer 1, the cross-section of the reinforcing structure 3 can be a triangle. In practical applications, depending on the shape of the edge 23 of the heat-conducting layer 2, this triangle can be a right triangle, where the right angle is the angle between the plane containing the edge of the heat-conducting layer 2 and the plane containing the base layer 1, or it can be an obtuse triangle or an acute triangle.

[0047] In practical applications, the reinforcing structure 3 can be connected to the entire range of the corresponding height on one side of the edge of the heat-conducting layer 2, or it can be connected to a portion of the corresponding height on one side of the edge of the heat-conducting layer 2.

[0048] In some specific embodiments, the thermally conductive layer 2 includes a metal layer with a thermal conductivity ranging from 375 to 450 W / mK.

[0049] In practical applications, the thermally conductive layer 2 is a conductor layer, and the base layer 1 is an insulating layer.

[0050] In one specific embodiment, the substrate and the heat-conducting layer 2 are rectangular sheet structures. One or more heat-conducting layers 2 can be distributed on one side surface of the base layer 1. In practical applications, the projection of the heat-conducting layer 2 on the base layer 1 is rectangular, that is, the heat-conducting layer 2 has four side edges. The reinforcing structure 3 can be set on two opposite edges of the heat-conducting layer 2, or it can be set on all edges or any one edge. This can achieve structural reinforcement of part or all edges connecting the heat-conducting layer 2 and the base layer 1 according to actual needs.

[0051] In one specific embodiment, two heat-conducting layers 2 are independently bonded to one side surface of the substrate, with their edges 23 parallel to each other. A gap is formed between the two heat-conducting layers 2. In practical applications, a reinforcing structure 3 can be provided on the side of the two heat-conducting layers 2 away from the gap, such as... Figure 5 As shown. It should be noted that this embodiment does not limit the thickness of the reinforcing structure 3 on different sides of the edge 23 of the heat-conducting layer 2 to be the same. In practical applications, users can set the thickness of each reinforcing structure 3 to be the same or different according to actual needs.

[0052] In some specific embodiments, the thermally conductive layer 2 includes a first thermally conductive layer 21 and a second thermally conductive layer 22; one side of the first thermally conductive layer 21 is connected to the second thermally conductive layer 22, and the other side is connected to the first surface 11 or the second surface 12 of the base layer 1.

[0053] In some specific embodiments, the first thermally conductive layer 21 includes one or more of a nickel plating layer, a gold plating layer, and a gold-tin plating layer;

[0054] The second thermally conductive layer 22 includes one or more of a copper layer, an aluminum layer, a silver layer, and a tungsten layer. In practical applications, the thermally conductive layer 2 is a metallic conductor layer, wherein the copper layer, aluminum layer, silver layer, and tungsten layer all have good thermal conductivity and are suitable as the thermally conductive layer 2.

[0055] In practical applications, the first heat-conducting layer 21 can be sequentially formed with a gold-tin plating layer and a nickel plating layer from the outside in. The second heat-conducting layer 22 includes a copper layer. Copper has good heat dissipation and electrical conductivity; however, it is prone to oxidation by reacting with oxygen in the air during heating. By setting a nickel plating layer on the copper layer, not only can the flatness and uniformity of the copper layer surface be improved, allowing heat to be transferred evenly, but it can also prevent the diffusion of copper atoms in a high-temperature environment, preventing copper oxidation and ensuring the stability of the heat sink structure. A gold-tin plating layer is further set on the nickel plating layer. The gold-tin plating layer has good wettability and can spread evenly, which can improve the welding performance of the heat-conducting layer 2 and achieve reliable welding between the heat-conducting layer 2 and external components.

[0056] In some specific embodiments, the base layer 1 includes a silicon carbide layer and / or an aluminum nitride layer. In practical applications, the base layer 1 is an insulating layer. By using insulating layers with good thermal conductivity, such as silicon carbide and / or aluminum nitride layers, heat can be effectively transferred outward while preventing electrical short circuits.

[0057] This embodiment provides a heat sink structure. By providing a reinforcing structure 3 on part or all of the edges of the heat-conducting layer 2, and the reinforcing structure 3 being attached to the base layer 1 near the heat-conducting layer 2, it can provide support for the edge 23 of the heat-conducting layer 2 and the base layer 1 near the heat-conducting layer 2, thereby strengthening the connection strength between the heat-conducting layer 2 and the base layer 1 at the edge position and improving the bending resistance of the edge of the heat-conducting layer 2.

[0058] Example 2

[0059] This embodiment provides a semiconductor device, the specific solution of which is as follows:

[0060] A semiconductor device includes any of the heat sink structures described in Embodiment 1. In one specific embodiment, the semiconductor device includes a heating element and a heat dissipation medium, which are respectively disposed on opposite sides of the heat sink structure. One side of the heating element is connected to one side of the thermally conductive layer 2, while the heat dissipation medium can be directly connected to the base layer 1 or connected to the thermally conductive layer 2.

[0061] Heat-generating components include chips, and heat dissipation media include heat sinks, thermal paste, or thermal pads.

[0062] By providing a reinforcing structure 3 at part or all of the edges of the heat-conducting layer 2 in the heat sink structure, the reinforcing structure 3 is respectively attached to the edge of the heat-conducting layer 2 and the base layer 1 near the edge of the heat-conducting layer 2. This can further strengthen the connection between the heat-conducting layer 2 and the reinforcing structure 3, reduce the risk of bending or cracking at the edge of the heat-conducting layer 2, and improve the service life and performance of the semiconductor device.

[0063] This invention provides a semiconductor device that, by setting any of the heat sink structures in the aforementioned technical solutions, can effectively strengthen the connection between the heat-conducting layer and the base layer in the heat sink structure, reduce the possibility of cracking at the edge of the heat-conducting layer due to external bending, and further extend the service life of the semiconductor device.

[0064] The above is a detailed description of the preferred embodiments of the present utility model. However, the present utility model is not limited to the described embodiments. Those skilled in the art can make various equivalent modifications or substitutions without departing from the spirit of the present utility model. All such equivalent modifications or substitutions are included within the scope defined by the claims of this application.

Claims

1. A heat sink structure, characterized in that, Including the base layer and the heat-conducting layer; The base layer is provided with corresponding first and second surfaces, and the heat-conducting layer is provided on at least one of the first and second surfaces. The projection of the thermally conductive layer onto the base layer is located within the range of the base layer; The heat-conducting layer has a reinforcing structure on some or all of its edges, and the reinforcing structure is attached to the base layer near the edge of the heat-conducting layer to improve the bending resistance of the edge of the heat-conducting layer.

2. The heat sink structure according to claim 1, characterized in that, The direction outward from the edge of the heat-conducting layer is a preset first direction; Along the first direction, the thickness of the reinforcing structure decreases.

3. The heat sink structure according to claim 1, characterized in that, The exposed surface of the reinforcing structure includes a concave or convex arc-shaped surface.

4. A heat sink structure according to claim 1, characterized in that, The reinforcing structure includes a stepped structure; the thickness of the stepped structure decreases along the direction from the side near the edge of the heat-conducting layer to the side away from the edge of the heat-conducting layer.

5. A heat sink structure according to claim 1, characterized in that, The exposed surface of the reinforcing structure includes a plane; the plane forms an angle with the plane of the base layer. The included angle ranges from 12° to 45°.

6. A heat sink structure according to claim 1, characterized in that, The thermally conductive layer comprises a metal layer with a thermal conductivity ranging from 375 to 450 W / mK.

7. A heat sink structure according to claim 1, characterized in that, The heat-conducting layer includes a first heat-conducting layer and a second heat-conducting layer; One side of the first thermally conductive layer is connected to the second thermally conductive layer, and the other side is connected to the first surface or the second surface of the base layer; One side of the second thermal conductive layer is connected to the first thermal conductive layer.

8. A heat sink structure according to claim 7, characterized in that, The first thermally conductive layer includes one or more of a nickel plating layer, a gold plating layer, and a gold-tin plating layer; The second thermally conductive layer includes one or more of a copper layer, an aluminum layer, a silver layer, and a tungsten layer.

9. A heat sink structure according to claim 1, characterized in that, The base layer includes a silicon carbide layer and / or an aluminum nitride layer.

10. A semiconductor device, characterized in that, Includes a heat sink structure according to any one of claims 1-9.

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