Semiconductor integrated MOS tube structure

Abstract

The utility model discloses a semiconductor integrated MOS tube structure, and relates to the technical field of semiconductor devices. Comprising a plastic package shell, an aluminum substrate is embedded in the inner bottom of the plastic package shell, a lead frame is fixedly installed in the plastic package shell, the bottom of the lead frame is attached to the aluminum substrate through heat conduction paste, pins are arranged on the lead frame and extend outwards from the side wall of the plastic package shell, a chip body is soldered on the lead frame, and the chip body is connected with the plastic package shell. And one end of the aluminum substrate is hinged with a metal protection sheet through a pin shaft. According to the semiconductor integrated MOS tube structure, when the semiconductor integrated MOS tube structure is transported or carried, the metal protection sheet is clamped with the pins through the clamping grooves, so that the pins are accommodated in the protection sheet, the pins are protected, the condition that the pins are bent due to extrusion of external objects in the transportation process can be improved, and the pins are not damaged during installation. The metal protection sheet is folded and put away to be tightly attached to the aluminum substrate, so that the heat dissipation area can be increased, and the heat dissipation effect of the MOS tube is improved.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor device technology, specifically to a semiconductor integrated MOS transistor structure. Background Technology

[0002] MOSFET, or Insulating Field-Effect Transistor in integrated circuits, has multiple functions, such as switching and blocking. In general electronic circuits, MOSFETs are usually used in amplifier circuits or switching circuits. The use of MOSFETs has brought great convenience to electronic devices. MOSFETs are commonly used in various electronic products such as inverters, solar controllers, electronic transformers, and power adapters.

[0003] In related technologies, a MOSFET generally includes a MOSFET block and pins. There are usually three pins, which are electrically connected to the MOSFET block. The three pins serve as the source, gate, and drain, respectively. The MOSFET is connected to the PCB board through the pins.

[0004] However, most MOSFETs have long leads, which are generally exposed. During transport or carrying, they are easily squeezed by external objects or bent by external forces, affecting their normal use. Therefore, current MOSFETs need to be improved. Utility Model Content

[0005] This invention provides a semiconductor integrated MOS transistor structure to solve the problems in the background art.

[0006] To achieve the above objectives, this utility model provides the following technical solution: a semiconductor integrated MOS transistor structure, including a plastic-encapsulated housing, an aluminum substrate embedded in the inner bottom of the plastic-encapsulated housing, a lead frame fixedly installed inside the plastic-encapsulated housing, and the bottom of the lead frame being attached to the aluminum substrate by thermal paste, the lead frame having pins that extend outward from the side wall of the plastic-encapsulated housing, a chip being soldered onto the lead frame, and a metal protective sheet hinged to one end of the aluminum substrate by a pin, and a slot being formed on the metal protective sheet, the metal protective sheet being engaged with the pin through the slot.

[0007] Furthermore, the bottom of the plastic-encapsulated housing is provided with a stepped through groove, and the aluminum substrate is fitted into the stepped through groove.

[0008] Furthermore, the bottom surface of the aluminum substrate is flush with the bottom surface of the plastic encapsulation shell, and the top surface of the aluminum substrate extends into the plastic encapsulation shell through a stepped groove.

[0009] Furthermore, one side of the stepped through groove is an open structure, and one end of the aluminum substrate extends out of the stepped through groove from the open structure.

[0010] Furthermore, the plastic encapsulation shell is provided with fixing holes, and the fixing holes penetrate through the upper and lower surfaces of the plastic encapsulation shell.

[0011] Furthermore, the metal protective sheet has a clearance notch on its side and hollow holes on its surface.

[0012] Compared with the prior art, the present invention provides a semiconductor integrated MOS transistor structure, which has the following beneficial effects:

[0013] This semiconductor integrated MOSFET structure allows for the attachment of a metal protective sheet to the pins via a slot during transportation or carrying. This design protects the pins from bending caused by external objects during transport. During installation, the metal protective sheet is folded up and placed tightly against the aluminum substrate, increasing the heat dissipation area and improving the MOSFET's heat dissipation performance. Attached Figure Description

[0014] Figure 1 It is a structural diagram of the utility model;

[0015] Figure 2 This is a top view of the present invention;

[0016] Figure 3 This is a schematic diagram of the metal protective sheet conversion of this utility model.

[0017] In the diagram: 1. Molded housing; 2. Aluminum substrate; 3. Lead frame; 4. Pin; 5. Chip body; 6. Metal protective sheet; 7. Slot; 8. Stepped through slot; 9. Fixing hole; 10. Clearance notch; 11. Hole cutout. Detailed Implementation

[0018] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the protection scope of the present utility model.

[0019] Please see Figure 1-Figure 3This utility model discloses a semiconductor integrated MOSFET structure, including a plastic encapsulation housing 1. An aluminum substrate 2 is embedded in the bottom of the plastic encapsulation housing 1. A lead frame 3 is fixedly installed inside the plastic encapsulation housing 1, and the bottom of the lead frame 3 is attached to the aluminum substrate 2 with thermal paste. The lead frame 3 is provided with pins 4, and the pins 4 extend outward from the side wall of the plastic encapsulation housing 1. A chip body 5 is soldered to the lead frame 3. A metal protective sheet 6 is hinged to one end of the aluminum substrate 2 by a pin, and a slot 7 is formed on the metal protective sheet 6. The metal protective sheet 6 is engaged with the pins 4 through the slot 7. During transportation or carrying, the metal protective sheet 6 is engaged with the pins 4 through the slot 7, so that the pins 4 are housed in the protective sheet, thereby protecting the pins 4 and preventing the pins 4 from being bent by external objects during transportation. During installation, the metal protective sheet 6 is folded up and made to fit tightly against the aluminum substrate 2, which can increase the heat dissipation area and improve the heat dissipation effect of the MOSFET.

[0020] Specifically, the bottom of the plastic-encapsulated housing 1 is provided with a stepped through groove 8, and the aluminum substrate 2 is fitted into the stepped through groove 8.

[0021] In this embodiment, the stepped through groove 8 is an assembly structure used for the installation and fixation of the aluminum substrate 2.

[0022] Specifically, the bottom surface of the aluminum substrate 2 is flush with the bottom surface of the plastic encapsulation shell 1, and the top surface of the aluminum substrate 2 extends into the plastic encapsulation shell 1 through the stepped through groove 8.

[0023] In this embodiment, the lead frame 3 serves as the chip carrier of the integrated circuit. It is a key structural component that uses bonding materials (gold wire, aluminum wire, copper wire) to realize the electrical connection between the internal circuit leads of the chip and the external leads, forming an electrical circuit. It acts as a bridge to connect with external wires and dissipates heat from the components. The aluminum substrate 2 serves as a heat conduction medium, which can increase the heat dissipation area.

[0024] Specifically, one side of the stepped through groove 8 is an open structure, and one end of the aluminum substrate 2 extends out of the stepped through groove 8 from the open structure.

[0025] In this embodiment, the aluminum substrate 2 is hinged to the metal protective sheet 6 via a pin, which facilitates the subsequent folding of the metal protective sheet 6.

[0026] Specifically, the plastic encapsulation housing 1 is provided with fixing holes 9, and the fixing holes 9 penetrate through the upper and lower surfaces of the plastic encapsulation housing 1.

[0027] In this embodiment, the fixing hole 9 is a mounting structure used to fix the MOSFET to the designated mounting position with screws.

[0028] Specifically, the metal protective sheet 6 has a clearance notch 10 on its side and a hollow hole 11 on its surface.

[0029] In this embodiment, the clearance notch 10 is a clearance design. When the metal protective sheet 6 is folded and tightly attached to the aluminum substrate 2, the clearance notch 10 is used to avoid the position of the fixing hole 9. The hollow hole 11 plays a role in reducing weight and saving materials, while also facilitating air convection and dissipating heat from the component.

[0030] During use, when transporting or carrying, the metal protective sheet 6 is snapped into the pin 4 through the slot 7, so that the pin 4 is housed inside the protective sheet, thereby protecting the pin 4 and preventing the pin 4 from being bent due to external pressure during transportation. When installing, the metal protective sheet 6 is folded up and placed tightly against the aluminum substrate 2, which increases the heat dissipation area and improves the heat dissipation effect of the MOSFET.

[0031] In summary, this semiconductor integrated MOSFET structure allows the metal protective sheet 6 to be engaged with the pin 4 via the slot 7 during transportation or carrying, thus protecting the pin 4 and preventing it from bending due to external pressure during transport. During installation, the metal protective sheet 6 is folded up and placed tightly against the aluminum substrate 2, increasing the heat dissipation area and improving the heat dissipation effect of the MOSFET.

[0032] Although embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the present invention, the scope of which is defined by the appended claims and their equivalents.

Claims

1. A semiconductor integrated MOS transistor structure, comprising a plastic-encapsulated housing (1), characterized in that: An aluminum substrate (2) is embedded in the bottom of the plastic encapsulation housing (1). A lead frame (3) is fixedly installed inside the plastic encapsulation housing (1), and the bottom of the lead frame (3) is attached to the aluminum substrate (2) by thermal paste. The lead frame (3) is provided with pins (4), and the pins (4) extend outward from the side wall of the plastic encapsulation housing (1). A chip body (5) is soldered on the lead frame (3). A metal protective sheet (6) is hinged to one end of the aluminum substrate (2) by a pin, and a slot (7) is opened on the metal protective sheet (6). The metal protective sheet (6) is engaged with the pin (4) through the slot (7).

2. The semiconductor integrated MOS transistor structure according to claim 1, characterized in that: The bottom of the plastic-encapsulated housing (1) is provided with a stepped through groove (8), and the aluminum substrate (2) is fitted into the stepped through groove (8).

3. The semiconductor integrated MOS transistor structure according to claim 2, characterized in that: The bottom surface of the aluminum substrate (2) is flush with the bottom surface of the plastic encapsulation shell (1), and the top surface of the aluminum substrate (2) extends into the plastic encapsulation shell (1) through the stepped through groove (8).

4. The semiconductor integrated MOS transistor structure according to claim 2, characterized in that: One side of the stepped through groove (8) is an open structure, and one end of the aluminum substrate (2) extends out of the stepped through groove (8) from the open structure.

5. The semiconductor integrated MOS transistor structure according to claim 1, characterized in that: The plastic-encapsulated housing (1) is provided with fixing holes (9), and the fixing holes (9) penetrate through the upper and lower surfaces of the plastic-encapsulated housing (1).

6. The semiconductor integrated MOS transistor structure according to claim 1, characterized in that: The metal protective sheet (6) has a clearance notch (10) on its side and a hollow hole (11) on its surface.

Images