Novel LED structure

Abstract

The utility model relates to the technical field of light emitting diodes, in particular to a novel LED structure, which comprises a core particle, a positive electrode and a negative electrode, the core particle comprises a substrate, an N-type GaN quantum well layer, an MQW quantum well layer and a reflecting layer, the N-type GaN quantum well layer and the MQW quantum well layer are sequentially arranged on the surface of the substrate, the reflecting layer is arranged on the back surface of the substrate, and the reflecting layer is a metal reflecting layer. Protective layers are arranged on the bottom surface of the metal emission layer and four side surfaces of the core particle. According to the utility model, the structure of the reflective layer of the LED is optimized, and the optical reflective layer with a higher reflective effect is prepared by evaporating metal such as silver on the back surface of the LED or combining the metal with other materials, so that the light emitting loss caused by poor reflective effect of the DBR structure at a non-vertical angle can be reduced, and the light emitting efficiency of the LED is improved. And meanwhile, after the scribing of the plated metal reflecting layer is completed, the four side surfaces of the core particles are plated with protective layers, so that the metal edges and the side surfaces of the chip are better protected.

Description

Technical Field

[0001] This utility model belongs to the field of light-emitting diode technology, and specifically relates to a novel LED structure. Background Technology

[0002] Existing front-mounted LED manufacturing technology generally requires an emission layer on the back of the LED. This reflection layer is usually made of a DBR structure (composed of two materials with different refractive indices, such as SiO2 and Ti3O5, but not limited to these two materials).

[0003] Existing LED chip reflective structures suffer from poor reflectivity due to factors such as DBR having high reflectivity only in the vertical direction and some absorption at other angles, resulting in a certain loss of light output from the chip. Utility Model Content

[0004] This invention addresses the problems in the prior art by developing a novel LED structure that optimizes the reflective layer structure and replaces the original reflective layer with a metal structure, thereby improving the luminous efficiency of the LED.

[0005] To achieve the above objectives, the present invention adopts the following technical solution:

[0006] A novel LED structure includes a chip, a positive electrode, and a negative electrode. The chip includes a substrate, an N-type GaN layer sequentially disposed on the surface of the substrate, an MQW quantum well layer, and a reflective layer disposed on the back side of the substrate. The reflective layer is a metal reflective layer, and a protective layer is provided on the bottom surface of the metal reflective layer and on the four sides of the chip.

[0007] Preferably, the substrate is a sapphire substrate.

[0008] Furthermore, the metal reflective layer is made of a metal with high reflectivity.

[0009] Preferably, the metal reflective layer is made of metallic silver.

[0010] Furthermore, the protective layer is made of insulating material.

[0011] Compared with the prior art, the present invention has the following beneficial effects:

[0012] This invention optimizes the reflective layer structure of LEDs by depositing metallic silver or other metals, or a combination of metals and other materials, onto the back of the LED to create an optical reflective layer with higher reflectivity. This reduces light loss caused by the poor reflectivity of the DBR structure at non-perpendicular angles, thereby improving the light extraction efficiency of the LED. Furthermore, after dicing the chip with the metal reflective layer, a protective layer is deposited on all four sides of the chip to better protect the metal edges and the chip sides. Attached Figure Description

[0013] Figure 1 This refers to the existing LED chip structure.

[0014] Figure 2 This invention relates to the LED chip structure. Detailed Implementation

[0015] To further illustrate the technical means and effects adopted by this utility model in order to achieve the intended utility model purpose, the following detailed description of the specific implementation methods, structure, features and effects of this utility model is provided in conjunction with the accompanying drawings and preferred embodiments.

[0016] like Figure 1 As shown, in order to increase the light output of the LED electrode surface, the optical reflective layer is generally a DBR structure, which is composed of two materials with different refractive indices, such as SiO2 and Ti3O5, but is not limited to these two materials.

[0017] like Figure 2 As shown, it consists of a metal reflective layer and a protective layer. The metal reflective layer is a highly reflective metal, and the protective layer (usually composed of insulating materials such as SiO2 or multiple insulating materials) is prepared after the metal reflective layer is made. After the core particles are cut and expanded, there are certain gaps between the core particles. Then, the metal protective layer is prepared on the metal reflective layer, so that it not only covers the surface of the metal reflective layer, but also has a certain protective layer covering the four sides of the core particles.

[0018] The above description is merely a preferred embodiment of the present utility model and is not intended to limit the present utility model in any way. Although the present utility model has been disclosed above with reference to a preferred embodiment, it is not intended to limit the present utility model. Any person skilled in the art can make some modifications or alterations to the above-disclosed technical content to create equivalent embodiments without departing from the scope of the present utility model. Any simple modifications, equivalent changes and alterations made to the above embodiments based on the technical essence of the present utility model without departing from the scope of the present utility model shall still fall within the scope of the present utility model.

Claims

1. A novel LED structure, comprising a chip, a positive electrode, and a negative electrode, wherein the chip comprises a substrate, an N-type GaN layer sequentially disposed on the surface of the substrate, an MQW quantum well layer, and a reflective layer disposed on the back side of the substrate, characterized in that: The reflective layer is a metal reflective layer, and the bottom surface of the metal reflective layer and the four sides of the core particle are provided with protective layers.

2. The novel LED structure as described in claim 1, characterized in that: The substrate is a sapphire substrate.

3. The novel LED structure as described in claim 1, characterized in that: The metal reflective layer is made of a metal with high reflectivity.

4. The novel LED structure as described in claim 3, characterized in that: The metallic reflective layer is made of metallic silver.

5. A novel LED structure as described in claim 1, characterized in that: The protective layer is made of insulating material.

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