Detection assembly, detection module and detection equipment

Abstract

The utility model provides a detection assembly, a detection module and detection equipment, and belongs to the technical field of medical instruments. The cold end of the semiconductor refrigeration structure is in contact with the photoelectric conversion array layer through the refrigeration through hole, so that the photoelectric conversion array layer is located in a refrigeration area formed by the cold end, and the photoelectric conversion array layer can be kept in a stable low-temperature state. Through the temperature isolation layer, a refrigeration area formed at the cold end of the semiconductor refrigeration structure and a heating area formed at the hot end of the semiconductor refrigeration structure are subjected to temperature isolation, so that the photoelectric conversion array layer located at the refrigeration area is subjected to thermal isolation from other heating devices. And the heat is transferred out through the hot end of the semiconductor refrigeration structure. The detection assembly is simple in structure and easy to regulate and control, the low-temperature environment where the photoelectric conversion array layer is located can be precisely regulated and controlled, the refrigeration efficiency is improved, and the problem that the refrigeration efficiency is low due to a traditional air cooling structure or a liquid cooling structure is solved.

Description

Technical Field

[0001] This application belongs to the field of medical device technology, and in particular relates to a detection component, detection module and detection device. Background Technology

[0002] Positron emission tomography (PET) is an important medical imaging technique widely used in fields such as tumor diagnosis and brain function research. The PET detector is a crucial component of the PET system, and its performance directly affects the imaging quality. The photoelectric conversion device in the PET detector is highly sensitive to temperature. Lower temperatures result in higher gain for the photoelectric conversion device. Simultaneously, greater temperature stability leads to better PET detector performance. Therefore, maintaining a stable, low-temperature environment is essential for the PET detector's detection performance.

[0003] However, traditional PET detectors employ liquid cooling or air cooling to control their temperature. Liquid cooling involves creating liquid flow channels within the detector to remove heat generated by the liquid. Air cooling utilizes airflow channels within the detector to remove heat. To maintain a low temperature for the photoelectric conversion device, traditional PET detectors, whether using liquid or air cooling, require a comprehensive cooling system to control the water or air temperature. This results in a complex and difficult-to-adjust temperature control structure, leading to relatively low cooling efficiency. Utility Model Content

[0004] The purpose of this application is to provide a detection component, detection module, and detection device, which aims to solve the problem of low cooling efficiency caused by the complex and difficult-to-control temperature control structure of traditional PET detectors.

[0005] This application provides a detection component including a temperature isolation layer, a semiconductor cooling structure, and a photoelectric conversion array layer; the temperature isolation layer is disposed on the surface of the photoelectric conversion array layer, and the temperature isolation layer is provided with a cooling via; the semiconductor cooling structure is disposed in the cooling via, and the semiconductor cooling structure has a cold end and a hot end disposed opposite to each other, and the cold end of the semiconductor cooling structure is disposed on the surface of the photoelectric conversion array layer through the cooling via.

[0006] In one embodiment, the detection component further includes:

[0007] A temperature homogenizing layer is disposed between the temperature isolation layer and the photoelectric conversion array layer, and the cold end of the semiconductor cooling structure is disposed on the surface of the temperature homogenizing layer away from the photoelectric conversion array layer through the cooling via.

[0008] In one embodiment, the detection component further includes:

[0009] A thermally conductive layer is disposed between the temperature homogenizing layer and the photoelectric conversion array layer.

[0010] In one embodiment, the detection component further includes:

[0011] A crystal array layer is optically coupled to the photoelectric conversion array layer;

[0012] The photoelectric conversion array layer is disposed between the crystal array layer and the thermal conductive layer.

[0013] In one embodiment, the detection component further includes:

[0014] First, install the isolation structure;

[0015] The second mounting isolation structure is disposed at an interval from the first mounting isolation structure at opposite ends of the temperature isolation layer in the circumferential direction;

[0016] The first mounting isolation structure and the second mounting isolation structure extend along the thickness direction of the crystal array layer and are used to clamp the photoelectric conversion array layer, the temperature distribution layer, the thermal conductive layer and the crystal array layer.

[0017] In one embodiment, the surfaces of the first and second mounting isolation structures near the photoelectric conversion array layer are provided with heat insulation film layers;

[0018] The first mounting isolation structure, the second mounting isolation structure, and the temperature isolation layer are integrally formed.

[0019] In one embodiment, the detection component further includes:

[0020] The first sealed isolation structure surrounds and forms the first accommodating space;

[0021] The temperature isolation layer, the semiconductor cooling structure, and the photoelectric conversion array layer are disposed within the first accommodating space.

[0022] This application provides a detection module, including:

[0023] Multiple detector components are arranged in an array, each of which includes a temperature isolation layer, a semiconductor cooling structure, and a photoelectric conversion array layer;

[0024] The temperature isolation layer is disposed on the surface of the photoelectric conversion array layer, and the temperature isolation layer is provided with cooling through holes;

[0025] The semiconductor cooling structure is disposed within the cooling via, and the semiconductor cooling structure has a cold end and a hot end disposed opposite to each other. The cold end of the semiconductor cooling structure is disposed on the surface of the photoelectric conversion array layer through the cooling via.

[0026] A first heat transfer layer is disposed at the hot end of the plurality of semiconductor cooling structures.

[0027] In one embodiment, the detection module further includes:

[0028] The first support structure has a first end and a second end that are arranged opposite to each other in the circumferential direction;

[0029] The detection component has a first mounting isolation structure and a second mounting isolation structure that are arranged opposite to each other in the circumferential direction;

[0030] The first installation isolation structure is disposed at the first end, and the second installation isolation structure is disposed at the second end.

[0031] In one embodiment, the first heat transfer layer is disposed between the first support structure and the hot ends of the plurality of semiconductor cooling structures.

[0032] In one embodiment, the detection module further includes:

[0033] A control circuit layer is disposed on the surface of the first support structure away from the detection component;

[0034] The control circuit layer is electrically connected to the temperature sensing element on the surface of the photoelectric conversion array layer, and is used to monitor the temperature of the photoelectric conversion array layer;

[0035] The control circuit layer is electrically connected to the semiconductor cooling structure and is used to regulate the voltage of the semiconductor cooling structure according to the temperature of the photoelectric conversion array layer.

[0036] In one embodiment, the detection module further includes:

[0037] The second support structure is disposed between the first end and the second end of the first support structure;

[0038] The second support structure is integrally formed with the first support structure.

[0039] In one embodiment, the detection module further includes:

[0040] The second heat transfer layer is disposed between the first end and the second end of the first support structure, and the second heat transfer layer is disposed close to the second support structure.

[0041] In one embodiment, the detection module further includes:

[0042] The second sealed isolation structure surrounds and forms the second accommodating space;

[0043] The first support structure, the plurality of arranged detection components, and the first heat transfer layer are disposed within the second accommodating space.

[0044] In one embodiment, the detection module further includes:

[0045] The cap structure is fastened to the second sealing and isolation structure.

[0046] This application provides a detection device, including the detection module described in any of the above embodiments.

[0047] The beneficial effects of this utility model embodiment compared with the prior art are:

[0048] The photoelectric conversion array layer exhibits excellent detection performance when operating in low-temperature environments. The semiconductor cooling structure comprises thermocouple pairs composed of N-type and P-type semiconductors. When current flows from the N-type semiconductor to the P-type semiconductor, heat is absorbed at the junction, lowering the temperature of the affected area and achieving a cooling effect, forming the cold junction of the semiconductor cooling structure. Simultaneously, heat is released at the junction in the opposite direction, forming the hot junction. The formation of the hot and cold junctions of the semiconductor cooling structure is achieved by applying a voltage signal to the structure to regulate the temperature difference. This allows for more precise control of temperature changes, maintaining a lower temperature at the cold junction to ensure the low-temperature state of the photoelectric conversion array layer and preventing low-temperature condensation.

[0049] The cold end of the semiconductor cooling structure contacts the photoelectric conversion array layer through a cooling via, placing the photoelectric conversion array layer within the cooling region formed by the cold end of the semiconductor cooling structure. The cooling energy generated by the cold end of the semiconductor cooling structure keeps the photoelectric conversion array layer at a stable low temperature. A temperature isolation layer separates the cooling region formed by the cold end of the semiconductor cooling structure from the heating region formed by the hot end, thus thermally isolating the photoelectric conversion array layer within the cooling region from other heat-generating devices in the detection module. Heat is then transferred away through the hot end of the semiconductor cooling structure.

[0050] The semiconductor cooling structure and temperature isolation layer of the detection component provided in this application can more effectively reduce the operating temperature of the photoelectric conversion array layer. Therefore, the photoelectric conversion array layer can be maintained at a low operating temperature, improving the detection performance and stability of the detection component. Compared to traditional liquid-cooled or air-cooled cooling structures, the detection component provided in this application has a simple and easily adjustable structure, enabling precise control of the low-temperature environment of the photoelectric conversion array layer and improving cooling efficiency.

[0051] Furthermore, in the detection component provided in this application, the semiconductor cooling structure is disposed within the cooling via, so that the temperature isolation layer and the semiconductor cooling structure are located in the same layer, resulting in a thinner overall thickness of the detection component. Therefore, compared to traditional liquid-cooled or air-cooled cooling structures, the detection component provided in this application does not have an internal air-cooling or liquid-cooling structure, further reducing the overall thickness. Consequently, the detection component provided in this application can save installation space and reduce manufacturing costs. Attached Figure Description

[0052] Figure 1 A schematic diagram of the structure of the detection component provided in this application;

[0053] Figure 2 for Figure 1 A cross-sectional schematic diagram of the temperature isolation layer, semiconductor cooling structure, and photoelectric conversion array layer along the AA direction;

[0054] Figure 3 This is a schematic diagram of the temperature isolation layer and semiconductor cooling structure provided in this application;

[0055] Figure 4 for Figure 1 A schematic diagram of the cross-sectional structure of the temperature homogenizing layer, the heat-conducting layer, and the crystal array layer along the AA direction;

[0056] Figure 5 for Figure 1 A cross-sectional schematic diagram of the installation isolation structure along the AA direction;

[0057] Figure 6 for Figure 1 A cross-sectional schematic diagram of the installation isolation structure, temperature isolation layer, and semiconductor refrigeration structure along the AA direction;

[0058] Figure 7 for Figure 1 A cross-sectional schematic diagram of the first sealing and isolation structure along the AA direction;

[0059] Figure 8 An exploded view of the detection module provided in this application from one perspective;

[0060] Figure 9 A cross-sectional structural diagram of the first heat transfer layer and temperature isolation layer, the semiconductor cooling structure, and the photoelectric conversion array layer provided in this application;

[0061] Figure 10 An exploded view of the detection device provided in this application from one perspective. Detailed Implementation

[0062] To make the technical problems, technical solutions, and beneficial effects to be solved by this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and are not intended to limit the scope of this application.

[0063] It should be noted that when a component is referred to as being "fixed to" or "set on" another component, it can be directly on or indirectly on that other component. When a component is referred to as being "connected to" another component, it can be directly connected to or indirectly connected to that other component.

[0064] It should be understood that the terms "length", "width", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application.

[0065] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this application, "multiple" means two or more, unless otherwise explicitly specified.

[0066] Please see Figures 1 to 3 This application provides a detection component 10. The detection component 10 includes a temperature isolation layer 110, a semiconductor cooling structure 120, and a photoelectric conversion array layer 130. The temperature isolation layer 110 is disposed on the surface of the photoelectric conversion array layer 130, and the temperature isolation layer 110 is provided with a cooling via 111. The semiconductor cooling structure 120 is disposed in the cooling via 111, and the semiconductor cooling structure 120 has a cold end (lower end surface) and a hot end (upper end surface) disposed opposite to each other. The cold end of the semiconductor cooling structure 120 is disposed on the surface of the photoelectric conversion array layer 130 through the cooling via 111.

[0067] In this embodiment, the photoelectric conversion array layer 130 exhibits excellent detection performance when operating in low-temperature environments. The semiconductor cooling structure 120 is a device that utilizes the thermoelectric effect of semiconductor materials to achieve cooling. The semiconductor cooling structure 120 includes a thermocouple pair composed of N-type and P-type semiconductors. When current flows from the N-type semiconductor to the P-type semiconductor, heat is absorbed at the junction, lowering the temperature of the area and achieving a cooling effect, forming the cold end of the semiconductor cooling structure 120. Simultaneously, heat is released at the junction in the opposite direction, forming the hot end of the semiconductor cooling structure 120. The formation of the hot and cold ends of the semiconductor cooling structure 120 is achieved by applying a voltage signal to the semiconductor cooling structure 120 to regulate the temperature difference. This allows for more precise control of temperature changes, maintaining a lower temperature at the cold end to ensure the low-temperature state of the photoelectric conversion array layer 130 and preventing low-temperature condensation.

[0068] The cooling via 111 can be understood as a channel that can penetrate the temperature isolation layer 110. The semiconductor cooling structure 120 is disposed within the cooling via 111 of the temperature isolation layer 110, allowing it to contact the photoelectric conversion array layer 130 beneath the temperature isolation layer 110. Furthermore, the cold end and hot end of the semiconductor cooling structure 120, with the temperature isolation layer 110 as the interface, correspondingly form a cooling region and a heating region. The temperature isolation layer 110 provides temperature isolation, effectively blocking heat transfer through conduction, convection, and radiation, further improving cooling efficiency and enhancing the stability and reliability of the detection component 10. By blocking heat transfer through conduction, convection, and radiation via the temperature isolation layer 110, condensation can be avoided, allowing the detection component 10 to maintain stable operation in both high-temperature and low-temperature environments. In one embodiment, the temperature insulation layer 110 can be a high-strength, low-thermal-conductivity material such as glass fiber or carbon fiber, or it can be a multi-layer thermal insulation material, or it can be vacuum insulation, etc., to improve the effectiveness of the temperature insulation layer.

[0069] The cold end of the semiconductor cooling structure 120 contacts the photoelectric conversion array layer 130 through a cooling via 111, placing the photoelectric conversion array layer 130 within the cooling region formed by the cold end of the semiconductor cooling structure 120. The cooling energy generated by the cold end of the semiconductor cooling structure 120 maintains the photoelectric conversion array layer 130 at a stable low temperature. The temperature isolation layer 110 isolates the cooling region formed by the cold end of the semiconductor cooling structure 120 from the heating region formed by the hot end, thermally isolating the photoelectric conversion array layer 130 within the cooling region from other heat-generating devices. Heat is then transferred away through the hot end of the semiconductor cooling structure 120.

[0070] The semiconductor cooling structure 120 and temperature isolation layer 110 of the detection component 10 provided in this application can more effectively reduce the operating temperature of the photoelectric conversion array layer 130. Therefore, the photoelectric conversion array layer 130 can be maintained in a low-temperature operating state, improving the detection performance and stability of the detection component 10. Compared with traditional liquid-cooled or air-cooled cooling structures, the temperature isolation layer 110 and semiconductor cooling structure 120 of the detection component 10 provided in this application are simple in structure and easy to control, enabling precise control of the low-temperature environment of the photoelectric conversion array layer 130 and improving cooling efficiency.

[0071] Furthermore, in the detection component 10 provided in this application, the semiconductor cooling structure 120 is disposed within the cooling via 111, so that the temperature isolation layer 110 and the semiconductor cooling structure 120 are located in the same layer, resulting in a thinner overall thickness of the detection component 10. Therefore, compared with traditional liquid-cooled or air-cooled cooling structures, the detection component 10 provided in this application does not have an internal air-cooling or liquid-cooling structure, further reducing its overall thickness. Thus, the detection component 10 provided in this application can save installation space and reduce manufacturing costs.

[0072] Please see Figure 4 In one embodiment, the detection component 10 includes a temperature equalization layer 140. The temperature equalization layer 140 is disposed between the temperature isolation layer 110 and the photoelectric conversion array layer 130. The cold end of the semiconductor cooling structure 120 is disposed on the surface of the temperature equalization layer 140 away from the photoelectric conversion array layer 130 through a cooling via 111.

[0073] In this embodiment, the temperature distribution layer 140 can be a heat spreader, a graphite plate, or a copper plate. The temperature distribution layer 140 has high thermal conductivity and a small footprint, enabling a more uniform temperature distribution. The temperature distribution layer 140 can quickly and uniformly conduct heat, thus keeping the photoelectric conversion array layer 130 at a consistently low temperature and preventing localized temperature unevenness. The cold end of the semiconductor cooling structure 120 is controlled by applying a voltage signal, allowing for precise control of the required low-temperature environment of the photoelectric conversion array layer 130. Furthermore, the cold end of the semiconductor cooling structure 120 contacts the temperature distribution layer 140 through the cooling via 111, allowing the temperature distribution layer 140 to uniformly conduct the temperature of the cold end, ensuring that the photoelectric conversion array layer 130 in contact with the temperature distribution layer 140 maintains a uniform low-temperature state.

[0074] Compared to traditional structures, the semiconductor cooling structure 120, temperature isolation layer 110 and temperature equalization layer 140 in the detection component 10 provided in this application effectively reduce the thickness of the detection component 10 while ensuring that the photoelectric conversion array layer 130 maintains a uniform low temperature state, thus saving installation space, reducing manufacturing costs, and adapting to more application scenarios, such as miniaturized site requirements.

[0075] In one embodiment, the detection component 10 further includes a thermally conductive layer 150. The thermally conductive layer 150 is disposed between the temperature equalization layer 140 and the photoelectric conversion array layer 130.

[0076] In this embodiment, the cold end of the semiconductor cooling structure 120 is sequentially attached to the temperature equalization layer 140 and the thermal conductive layer 150. The thermal conductive layer 150 can be a flexible thermal conductive pad, specifically a silicone flexible thermal conductive pad, a rubber flexible thermal conductive pad, or a composite flexible thermal conductive pad, etc. It has flexibility, elasticity, and insulation properties, and can easily adhere to the surface of the temperature equalization layer 140 and the surface of the photoelectric conversion array layer 130, effectively filling the tiny gaps between the contact surfaces, reducing contact thermal resistance, thereby improving heat transfer efficiency and providing good insulation protection.

[0077] A heat-conducting layer 150 is disposed between the temperature-equalizing layer 140 and the photoelectric conversion array layer 130, enabling rapid and uniform heat transfer between them. Furthermore, through the heat-conducting layer 150 and the temperature-equalizing layer 140, heat transfer between the photoelectric conversion array layer 130 and the semiconductor cooling structure 120 is achieved, allowing the photoelectric conversion array layer 130 to maintain a uniform low temperature. Thus, the heat dissipation function of the detection component 10 is achieved through the heat-conducting layer 150, the temperature-equalizing layer 140, and the semiconductor cooling structure 120, ensuring the photoelectric conversion array layer 130 maintains a uniform low temperature. Moreover, the heat-conducting layer 150, the temperature-equalizing layer 140, and the semiconductor cooling structure 120 are stacked, occupying less space and effectively reducing the thickness and volume of the detection component 10. This meets the design requirements for miniaturization and ultra-thinness, making it suitable for a wider range of applications.

[0078] In one embodiment, the detection component 10 further includes a crystal array layer 160. The crystal array layer 160 is optically coupled to the photoelectric conversion array layer 130. The photoelectric conversion array layer 130 is disposed between the crystal array layer 160 and the thermally conductive layer 150.

[0079] In this embodiment, the crystal array layer 160 can also be understood as a scintillation crystal. When high-energy particles (such as gamma rays, X-rays, etc.) interact with the crystal array layer 160, fluorescent photons are generated. The crystal array layer 160 is optically coupled to the photoelectric conversion array layer 130, so that the fluorescent photons are absorbed by the photoelectric conversion array layer 130 and converted into electrical signals. In one embodiment, the control circuit layer 40 is electrically connected to the photoelectric conversion array layer 130 through a flexible ribbon cable, a flexible PCB, or a connector 410, as shown in [reference]. Figure 6 and Figure 7 As shown, electrical signals are transmitted to the control circuit layer 40 via flexible cabling, flexible PCB, or connector 410. The control circuit layer 40 amplifies, processes, and analyzes the electrical signals, enabling the detection and measurement of high-energy particles (such as gamma rays and X-rays). Through the cold end of the semiconductor cooling structure 120, the temperature distribution layer 140, and the flexible heat-conducting layer 150, the heat generated by the photoelectric conversion array layer 130 and the crystal array layer 160 during operation can be dissipated in a timely manner, and the photoelectric conversion array layer 130 can be maintained at a uniform low temperature during operation.

[0080] Please see Figure 5 and Figure 6 In one embodiment, the detection assembly 10 further includes a first mounting isolation structure 171 and a second mounting isolation structure 172. The second mounting isolation structure 172 and the first mounting isolation structure 171 are spaced apart at opposite ends of the temperature isolation layer 110 in the circumferential direction. The first mounting isolation structure 171 and the second mounting isolation structure 172 extend along the thickness direction of the crystal array layer 160 and are used to clamp the photoelectric conversion array layer 130, the temperature distribution layer 140, the thermal conductive layer 150, and the crystal array layer 160.

[0081] In this embodiment, the circumferential direction of the temperature insulation layer 110 can be understood as... Figure 10The detection device 200 shown is located in the circumferential direction of the annular frame 201. Multiple detection modules 100 are arranged in a ring around the annular frame 201 to form a channel for accommodating a patient. The direction extending along the channel for accommodating the patient is the axial direction of the annular frame 201. A temperature isolation layer 110, a temperature equalization layer 140, a flexible thermal conductive layer 150, a photoelectric conversion array layer 130, and a crystal array layer 160 are sequentially stacked along the thickness direction of the crystal array layer 160. A first mounting isolation structure 171 and a second mounting isolation structure 172 are positioned opposite each other at opposite ends of the temperature isolation layer 110 in the circumferential direction and extend along the thickness direction of the crystal array layer 160, forming an open clamping space to clamp the temperature equalization layer 140, the flexible thermal conductive layer 150, the photoelectric conversion array layer 130, and the crystal array layer 160. Furthermore, the first mounting isolation structure 171 and the second mounting isolation structure 172 provide mounting and fixing references for the temperature distribution layer 140, the flexible thermal conductive layer 150, the photoelectric conversion array layer 130 and the crystal array layer 160, making it easy to clamp and encapsulate the temperature distribution layer 140, the flexible thermal conductive layer 150, the photoelectric conversion array layer 130 and the crystal array layer 160.

[0082] The second mounting isolation structure 172 and the first mounting isolation structure 171 are spaced apart at opposite ends of the temperature isolation layer 110 in the circumferential direction. This allows the detector component 10 to be mounted on the annular frame 201 from the side without occupying space along the thickness direction of the crystal array layer 160. Therefore, by using the second mounting isolation structure 172 and the first mounting isolation structure 171, the thickness and volume of the detector component 10 can be reduced, saving installation space, lowering manufacturing costs, and adapting to more application scenarios, such as miniaturized site requirements.

[0083] In one embodiment, a heat-insulating film layer is provided on the surface of the first mounting isolation structure 171 and the second mounting isolation structure 172 near the photoelectric conversion array layer 130. The first mounting isolation structure 171, the second mounting isolation structure 172, and the temperature isolation layer 110 are integrally formed.

[0084] In this embodiment, the heat insulation film layer can be a heat insulation material. The heat insulation film layer is disposed between the first mounting isolation structure 171 and the photoelectric conversion array layer 130, and also between the second mounting isolation structure 172 and the photoelectric conversion array layer 130. It effectively blocks the influence of heat conduction, convection, and radiation on the photoelectric conversion array layer 130, enabling the photoelectric conversion array layer 130 to operate under a uniform low temperature, further improving the stability and reliability of the detection component 10.

[0085] The heat insulation film layer prevents the photoelectric conversion array layer 130 from being affected by the external environment, ensuring the stable operation of the detection component 10 in both high and low temperature environments. The heat insulation film layer effectively prevents heat transfer, reduces temperature fluctuations and moisture penetration, thus preventing condensation at low temperatures. Compared to traditional temperature isolation structures, the first mounting isolation structure 171 and the second mounting isolation structure 172 provided in this application, equipped with heat insulation film layers, offer superior temperature isolation and better meet the needs of practical applications.

[0086] In one embodiment, the first mounting isolation structure 171, the second mounting isolation structure 172, and the temperature isolation layer 110 are integrally formed, which can enhance the overall strength and improve the stability of the structure. This is beneficial for clamping and encapsulating the temperature equalization layer 140, the flexible thermal conductive layer 150, the photoelectric conversion array layer 130, and the crystal array layer 160, thereby making the overall structure of the detection component 10 more stable.

[0087] In one embodiment, the first mounting isolation structure 171, the second mounting isolation structure 172, and the temperature isolation layer 110 are integrally formed in an H-shape, exhibiting strong bending and torsional resistance. Furthermore, the H-shaped structure has a relatively flat cross-sectional shape, occupying less space and effectively improving space utilization, without occupying space along the thickness direction of the crystal array layer 160. Thus, the H-shaped structure can reduce the thickness and volume of the detection component 10, saving installation space and lowering manufacturing costs.

[0088] In one embodiment, the photoelectric conversion array layer 130 can also be temperature-isolated with the first mounting isolation structure 171 and the second mounting isolation structure 172 using vacuum insulation. Creating a vacuum environment between the photoelectric conversion array layer 130 and the first and second mounting isolation structures 171 and 172 reduces heat transfer between them, suppresses heat convection, and reduces heat radiation. This allows the photoelectric conversion array layer 130 to operate at a uniform low temperature, further ensuring that the detection component 10 does not experience condensation at low temperatures.

[0089] Please see Figure 7 In one embodiment, the detection component 10 further includes a first sealing isolation structure 180. The first sealing isolation structure 180 surrounds and forms a first receiving space 181. A temperature isolation layer 110, a semiconductor cooling structure 120, and a photoelectric conversion array layer 130 are disposed within the first receiving space 181.

[0090] In this embodiment, the temperature isolation layer 110, the semiconductor cooling structure 120, the temperature distribution layer 140, the flexible thermal conductive layer 150, the photoelectric conversion array layer 130, and the crystal array layer 160 are all disposed within the first accommodating space 181. When the photoelectric conversion array layer 130 and the crystal array layer 160 are fully coupled and in contact, thermal isolation is also required around the crystal array layer 160 to prevent condensation from occurring on the surface of the photoelectric conversion array layer 130 and the crystal array layer 160 due to their low temperatures. The first sealing isolation structure 180 surrounds the crystal array layer 160 and the photoelectric conversion array layer 130, effectively isolating heat conduction and heat convection. At the same time, the first sealing isolation structure 180 covers the crystal array layer 160 and the photoelectric conversion array layer 130, providing light shielding and preventing external visible light from affecting the photoelectric conversion effect of the photoelectric conversion array layer 130.

[0091] In one embodiment, a heat-insulating material layer is filled between the first sealing isolation structure 180 and the crystal array layer 160, the first mounting isolation structure 171 and the second mounting isolation structure 172 to further isolate the thermally and prevent the photoelectric conversion array layer 130 and the crystal array layer 160 from condensing due to environmental influences caused by low temperatures.

[0092] In one embodiment, the filling insulation layer can be an insulation material such as aerogel, polystyrene foam, or fiberglass insulation cotton.

[0093] The temperature isolation structure formed by the temperature isolation layer 110, the first mounting isolation structure 171, the second mounting isolation structure 172, and the first sealing isolation structure 180 provided in this application can effectively block heat transfer through conduction, convection, and radiation. This can further improve the stability and reliability of the detection component 10, prevent the generation of condensate, and thus enable the detection component 10 to maintain a stable working state even under high or low external temperatures. Compared with traditional temperature isolation structures, the temperature isolation structure provided in this application is superior and better meets the needs of practical applications.

[0094] Please see Figure 8 and Figure 9This application provides a detection module 100. The detection module 100 includes a plurality of detection components 10 arranged in a row and a first heat transfer layer 20. Each detection component 10 includes a temperature isolation layer 110, a semiconductor cooling structure 120, and a photoelectric conversion array layer 130. The temperature isolation layer 110 is disposed on the surface of the photoelectric conversion array layer 130. The temperature isolation layer 110 is provided with a cooling via 111. The semiconductor cooling structure 120 is disposed within the cooling via 111. The semiconductor cooling structure 120 has a cold end and a hot end disposed opposite to each other. The cold end of the semiconductor cooling structure 120 is disposed on the surface of the photoelectric conversion array layer 130 through the cooling via 111. The first heat transfer layer 20 is disposed on the hot ends of the plurality of semiconductor cooling structures 120.

[0095] In this embodiment, the detection component 10 includes a temperature isolation layer 110, a semiconductor cooling structure 120, and a photoelectric conversion array layer 130. The relevant descriptions can be found in the previous embodiments. The semiconductor cooling structure 120 is disposed within the cooling vias 111 of the temperature isolation layer 110. The temperature isolation layer 110 is in contact with the first heat transfer layer 20, isolating the temperature of the first heat transfer layer 20 and preventing its transfer to the photoelectric conversion array layer 130. The first heat transfer layer 20 enables efficient heat transfer and balances temperature distribution, preventing localized overheating. The first heat transfer layer 20 is disposed at the hot ends of the multiple semiconductor cooling structures 120, allowing it to conduct heat away from the hot ends of the semiconductor cooling structures 120, which can also be understood as conducting heat away from the detection component 10, thus dissipating heat from the detection component 10. Therefore, by disposing of the first heat transfer layer 20 at the hot ends of the multiple semiconductor cooling structures 120, the heat from multiple hot ends can be dissipated uniformly without the need for a cooling device, further reducing costs and the overall size of the module.

[0096] In one embodiment, the first heat transfer layer 20 can be a phase change heat spreader, a graphite plate, or a high-efficiency heat transfer element formed by multiple heat pipes. The first heat transfer layer 20 is disposed at the hot end of multiple semiconductor cooling structures 120, enabling the overall heat dissipation of the detection module 100 with high thermal conductivity, thus achieving efficient heat dissipation. Furthermore, the first heat transfer layer 20 has a layered structure, is thin, small in volume, and occupies little space, which can reduce the overall thickness of the detection module 100.

[0097] In one embodiment, the first mounting isolation structure 171, the second mounting isolation structure 172, and the temperature isolation layer 110 are integrally formed into an H-shape, with the temperature isolation layer 110 in contact with the first heat transfer layer 20. Through the first mounting isolation structure 171, the second mounting isolation structure 172, and the temperature isolation layer 110, heat conduction between the first heat transfer layer 20 and the photoelectric conversion array layer 130 can be isolated.

[0098] In one embodiment, a temperature-insulating material, such as aerogel, can be disposed between the contact area of ​​the first heat transfer layer 20 and the temperature insulation layer 110. The temperature-insulating material between the contact area of ​​the first heat transfer layer 20 and the temperature insulation layer 110 can further double-block the effects of heat conduction, convection, and radiation on the photoelectric conversion array layer 130, preventing the generation of condensate.

[0099] In one embodiment, the detection module 100 further includes a first support structure 310. The first support structure 310 has a first end and a second end disposed opposite to each other in the circumferential direction. The detection assembly 10 has a first mounting isolation structure 171 and a second mounting isolation structure 172 disposed opposite to each other in the circumferential direction. The first mounting isolation structure 171 is disposed at the first end of the first support structure 310. The second mounting isolation structure 172 is disposed at the second end of the first support structure 310.

[0100] In this embodiment, the first support structure 310 has a first end and a second end that are arranged opposite to each other in the circumferential direction, such as... Figure 8 As shown. The circumferential direction of the first support structure 310 can be understood as... Figure 10 The detection device 200 shown is positioned in the circumferential direction of the annular frame 201. The detection component 10 is disposed at opposite ends of the first support structure 310 via the first mounting isolation structure 171 and the second mounting isolation structure 172, thereby achieving connection with the first support structure 310.

[0101] The first support structure 310 serves as a mounting frame, providing support for the entire detection module 100. The first mounting isolation structure 171 and the second mounting isolation structure 172 are integrally formed to create a mounting isolation assembly. One end of the mounting isolation assembly holds the photoelectric conversion array layer 130, the temperature equalization layer 140, the flexible thermal conductive layer 150, and the crystal array layer 160, while the other end is mounted and fixed on the opposite sides of the first support structure 310. This does not occupy the thickness direction of the crystal array layer 160, thus reducing the thickness and volume of the detection module 100.

[0102] In one embodiment, the first heat transfer layer 20 is disposed between the first support structure 310 and the hot ends of the plurality of semiconductor cooling structures 120.

[0103] In this embodiment, the first heat transfer layer 20 dissipates heat from multiple hot ends in a unified manner. The first heat transfer layer 20 is in contact with the first support structure 310, dissipating the heat transferred from the hot ends through the first support structure 310. A heat transfer path is formed between the hot ends of the multiple semiconductor cooling structures 120, the first heat transfer layer 20, and the first support structure 310, which can transfer the heat of the detection module 100 as a whole without the need for additional cooling devices, further reducing costs and the overall size of the module.

[0104] In one embodiment, the detection module 100 further includes a control circuit layer 40. The control circuit layer 40 is disposed on the surface of the first support structure 310 away from the detection component 10. The control circuit layer 40 is electrically connected to a temperature sensor on the surface of the photoelectric conversion array layer 130 for monitoring the temperature of the photoelectric conversion array layer 130. The control circuit layer 40 is also electrically connected to a semiconductor cooling structure 120 for adjusting the voltage of the semiconductor cooling structure 120 according to the temperature of the photoelectric conversion array layer 130.

[0105] In this embodiment, the temperature sensing element on the surface of the photoelectric conversion array layer 130 can be a temperature sensor. The temperature sensing element detects the temperature of the surface of the photoelectric conversion array layer 130 in real time and transmits the data to the control circuit layer 40. The control circuit layer 40 adjusts the voltage of the semiconductor cooling structure 120 according to the temperature, achieving closed-loop control to stabilize the temperature of the photoelectric conversion array layer 130. The control circuit layer 40 is electrically connected to both the temperature sensing element on the surface of the photoelectric conversion array layer 130 and the semiconductor cooling structure 120, which can more effectively stabilize the operating temperature of the photoelectric conversion array layer 130, keeping it at a low temperature, achieving precise temperature control, and improving cooling efficiency. Furthermore, the control circuit layer 40 is electrically connected to both the temperature sensing element on the surface of the photoelectric conversion array layer 130 and the semiconductor cooling structure 120, enabling real-time and precise temperature control so that other chips do not exceed their junction temperature.

[0106] In one embodiment, the detection module 100 further includes a second support structure 320. The second support structure 320 is disposed between the first end and the second end of the first support structure 310. The second support structure 320 and the first support structure 310 are integrally formed.

[0107] In this embodiment, the first heat transfer layer 20 transfers heat from the hot ends of the multiple semiconductor cooling structures 120 to the first support structure 310. The first support structure 310 is connected to the second support structure 320 and integrally formed, allowing the heat from the hot ends to be sequentially transferred to the first heat transfer layer 20, the first support structure 310, and the second support structure 320, forming a heat transfer path. This transfers the heat from the detection module 100 as a whole, achieving overall heat dissipation without the need for additional cooling devices, further reducing costs and the overall size of the module.

[0108] In one embodiment, the detection module 100 further includes a second heat transfer layer 50. The second heat transfer layer 50 is disposed parallel to the second support structure 320 between the first end and the second end of the first support structure 310, and the second heat transfer layer 50 is disposed close to the second support structure 320. The second heat transfer layer 50 is disposed on the surface of the control circuit layer 40 away from the first heat transfer layer 20.

[0109] In this embodiment, the second heat transfer layer 50 is positioned close to the second support structure 320. Heat from the hot ends of the multiple semiconductor cooling structures 120 is sequentially transferred to the first heat transfer layer 20, the first support structure 310, and the second support structure 320, and can be released through the second heat transfer layer 50. The material of the second heat transfer layer 50 is the same as that of the first heat transfer layer 20. The second heat transfer layer 50 effectively releases the heat transferred from the second support structure 320, achieving unified heat dissipation for the detection module 100. This eliminates the need for additional cooling devices, further reducing costs and the overall size of the module.

[0110] In one embodiment, the detection module 100 further includes a second sealing and isolation structure 60. The second sealing and isolation structure 60 surrounds and forms a second receiving space 610. The first support structure 310, a plurality of arranged detection components 10, and the first heat transfer layer 20 are disposed within the second receiving space 610.

[0111] In this embodiment, the second sealing and isolation structure 60 surrounds the first support structure 310, the plurality of arranged detection components 10, and the first heat transfer layer 20, effectively isolating heat conduction and heat convection. Simultaneously, the second sealing and isolation structure 60, by covering the first support structure 310, the plurality of arranged detection components 10, and the first heat transfer layer 20, provides a light-shielding effect, further preventing the influence of external visible light on the detection components 10.

[0112] In one embodiment, the second sealing and isolation structure 60 is filled with a heat insulation material layer between the first support structure 310, the plurality of arranged detection components 10 and the first heat transfer layer 20, to further isolate the heat and prevent the surface of the detection components 10 from condensing due to environmental influences when the temperature is low.

[0113] In one embodiment, the filling insulation layer can be ceramic fiber or carbon fiber cloth or metal coating (e.g., aluminum, copper, silver) or aerogel or polystyrene foam or fiberglass insulation cotton, which can effectively block heat radiation, heat conduction and heat convection.

[0114] In one embodiment, the detection module 100 further includes a cover structure 620. The cover structure 620 is engaged with the second sealing and isolation structure 60.

[0115] In this embodiment, the capping structure 620 and the second sealing isolation structure 60 form an outer encapsulation sealing structure to seal the multiple arranged detection components 10. By forming an outer encapsulation sealing structure with the capping structure 620 and the second sealing isolation structure 60, heat transfer through conduction, convection, and radiation can be effectively blocked, which can further improve the stability and reliability of the detection module 100, avoid the generation of condensation, and thus enable the detection module 100 to maintain a stable working state even in high or low temperature environments.

[0116] Please see Figure 10 This application provides a detection device 200, which includes the detection module 100 in any of the above embodiments.

[0117] In this embodiment, the detection device 200 includes a frame 201 and a plurality of detector modules 100 arranged in a ring on the frame 201. The frame 201 forms a channel for accommodating a patient. The plurality of detector modules 100 are arranged in a ring on the channel. The plurality of ring-shaped detector modules 100 use the principle of coincidence detection to detect the patient's lesions and construct a functional image that can reflect the functional metabolic state of the patient's lesions, thereby providing assistance to medical personnel in diagnosis and treatment.

[0118] Multiple detection modules 100 form a polygonal array structure. The second support structure 320 of each detection module 100 is arranged in a ring on the frame 201. Heat conducted from each detection module 100 is dissipated as a whole through the second heat transfer layer 50 and the second support structure 320. The second heat transfer layer 50 and the second support structure 320 are in contact with the frame 201, further enabling overall heat dissipation of the multiple detection modules 100 through the frame 201. The detection component 10 in the detection module 100 achieves overall heat dissipation through a heat transfer path formed by multiple semiconductor cooling structures 120, the first heat transfer layer 20, the first support structure 310, the second support structure 320, and the second heat transfer layer 50. Therefore, the detection component 10, detection module 100, and detection device 200 provided in this application can ensure rapid heat dissipation without the need for additional heat dissipation devices, cooling devices, or fans, thereby reducing manufacturing costs, simplifying size, and adapting to miniaturized installation sites.

[0119] In one embodiment, the detection device 200 is a positron emission tomography scanner. The detection device 200 uses positron emission tomography imaging technology and positron-labeled compounds as imaging agents to understand the functional metabolic status of the patient's lesions by the degree of uptake of the imaging agent by the lesions.

[0120] Of course, the detection device is not limited to using only the aforementioned positron emission tomography (PET) technology to achieve medical imaging of patient lesions; that is, the detection device 200 is not limited to a PET scanner. In other embodiments, the detection device 200 may also employ other radiographic imaging technologies such as X-ray computed tomography (X-ray CT) and single-photon emission computed tomography (SPPET). In other words, the detection device 200 may be a standalone imaging detection device such as a CT scanner or an SPPET scanner, or an integrated imaging detection device such as a PET / CT scanner or a PET / MRI scanner.

[0121] This detection device 200 is used to detect and image the affected areas of patients, thereby assisting medical personnel in diagnosis and treatment. The positron emission tomography (PET) scanner emits positron-emitting nuclides that decay and emit positrons. These positrons combine with free electrons in human tissue, annihilating and converting their mass energy into a pair of gamma photons with equal energy but opposite directions. When these 511 keV gamma photons, emitted in opposite directions, are simultaneously captured by detector units on both sides of the emitted body, the positron-emitting nuclide is determined to be located on the line connecting the two detector units (called the coincidence line, LOR). By using computer reconstruction algorithms to reconstruct images of the detection points carrying spatial location information detected in each direction, the spatial distribution of the nuclide within the organism can be obtained, thus generating an image containing positron-emitting nuclide information.

[0122] Those skilled in the art will clearly understand that, for the sake of convenience and brevity, the above-described division of functional units and modules is merely an example. In practical applications, the above functions can be assigned to different functional units and modules as needed, that is, the internal structure of the device can be divided into different functional units or modules to complete all or part of the functions described above. The functional units and modules in the embodiments can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit. The integrated unit can be implemented in hardware or as a software functional unit. Furthermore, the specific names of the functional units and modules are only for easy differentiation and are not intended to limit the scope of protection of this application. The specific working process of the units and modules in the above system can be referred to the corresponding process in the foregoing method embodiments, and will not be repeated here.

[0123] In the above embodiments, the descriptions of each embodiment have different focuses. For parts that are not described in detail or recorded in a certain embodiment, please refer to the relevant descriptions of other embodiments.

[0124] Those skilled in the art will recognize that the units and algorithm steps of the various examples described in conjunction with the embodiments disclosed herein can be implemented in electronic hardware, or a combination of computer software and electronic hardware. Whether these functions are implemented in hardware or software depends on the specific application and design constraints of the technical solution. Those skilled in the art can use different methods to implement the described functions for each specific application, but such implementation should not be considered beyond the scope of this application.

[0125] In the embodiments provided in this application, it should be understood that the disclosed devices / terminal equipment and methods can be implemented in other ways. For example, the device / terminal equipment embodiments described above are merely illustrative. For instance, the division of modules or units is only a logical functional division, and in actual implementation, there may be other division methods. For example, multiple units or components may be combined or integrated into another system, or some features may be ignored or not executed. Furthermore, the displayed or discussed mutual coupling or direct coupling or communication connection may be through some interfaces; the indirect coupling or communication connection between devices or units may be electrical, mechanical, or other forms.

[0126] The units described as separate components may or may not be physically separate. The components shown as units may or may not be physical units; that is, they may be located in one place or distributed across multiple network units. Some or all of the units can be selected to achieve the purpose of this embodiment according to actual needs.

[0127] Furthermore, the functional units in the various embodiments of this application can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit. The integrated unit can be implemented in hardware or as a software functional unit.

[0128] If the integrated module / unit is implemented as a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, all or part of the processes in the methods of the above embodiments can also be implemented by a computer program instructing related hardware. The computer program can be stored in a computer-readable storage medium, and when executed by a processor, it can implement the steps of the various method embodiments described above. The computer program includes computer program code, which can be in the form of source code, object code, executable files, or certain intermediate forms. The computer-readable medium can include: any entity or device capable of carrying the computer program code, recording media, USB flash drives, portable hard drives, magnetic disks, optical disks, computer memory, read-only memory (ROM), random access memory (RAM), electrical carrier signals, telecommunication signals, and software distribution media, etc. It should be noted that the content included in the computer-readable medium can be appropriately added or removed according to the requirements of legislation and patent practice in the jurisdiction. For example, in some jurisdictions, according to legislation and patent practice, computer-readable media do not include electrical carrier signals and telecommunication signals.

[0129] The above-described embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of this application, and should all be included within the protection scope of this application.

Claims

1. A detection component, characterized in that, It includes a temperature isolation layer (110), a semiconductor cooling structure (120), and a photoelectric conversion array layer (130); The temperature isolation layer (110) is disposed on the surface of the photoelectric conversion array layer (130), and the temperature isolation layer (110) is provided with a cooling through hole (111); The semiconductor cooling structure (120) is disposed in the cooling via (111). The semiconductor cooling structure (120) has a cold end and a hot end disposed opposite to each other. The cold end of the semiconductor cooling structure (120) is disposed on the surface of the photoelectric conversion array layer (130) through the cooling via (111).

2. The detection component as described in claim 1, characterized in that, Also includes: A temperature homogenizing layer (140) is disposed between the temperature isolation layer (110) and the photoelectric conversion array layer (130), and the cold end of the semiconductor cooling structure (120) is disposed on the surface of the temperature homogenizing layer (140) away from the photoelectric conversion array layer (130) through the cooling via (111).

3. The detection component as described in claim 2, characterized in that, Also includes: A thermally conductive layer (150) is disposed between the temperature homogenizing layer (140) and the photoelectric conversion array layer (130).

4. The detection component as described in claim 3, characterized in that, Also includes: The crystal array layer (160) is optically coupled to the photoelectric conversion array layer (130); The photoelectric conversion array layer (130) is disposed between the crystal array layer (160) and the thermal conductive layer (150).

5. The detection component as described in claim 4, characterized in that, Also includes: First installation isolation structure (171); The second mounting isolation structure (172) is disposed at opposite ends of the temperature isolation layer (110) in the circumferential direction, spaced apart from the first mounting isolation structure (171); The first mounting isolation structure (171) and the second mounting isolation structure (172) extend along the thickness direction of the crystal array layer (160) and are used to clamp the photoelectric conversion array layer (130), the temperature distribution layer (140), the thermal conductive layer (150) and the crystal array layer (160).

6. The detection component as described in claim 5, characterized in that, A heat-insulating film layer is provided on the surface of the first mounting isolation structure (171) and the second mounting isolation structure (172) near the photoelectric conversion array layer (130); The first mounting isolation structure (171), the second mounting isolation structure (172), and the temperature isolation layer (110) are integrally formed.

7. The detection component as described in any one of claims 1 to 6, characterized in that, Also includes: The first sealing and isolation structure (180) surrounds and forms the first receiving space (181); The temperature isolation layer (110), the semiconductor cooling structure (120), and the photoelectric conversion array layer (130) are disposed within the first accommodating space (181).

8. A detection module, characterized in that, include: Multiple detector components (10) are arranged in an array, each of the detector components (10) including a temperature isolation layer (110), a semiconductor cooling structure (120) and a photoelectric conversion array layer (130); The temperature isolation layer (110) is disposed on the surface of the photoelectric conversion array layer (130), and the temperature isolation layer (110) is provided with a cooling through hole (111); The semiconductor cooling structure (120) is disposed in the cooling via (111). The semiconductor cooling structure (120) has a cold end and a hot end disposed opposite to each other. The cold end of the semiconductor cooling structure (120) is disposed on the surface of the photoelectric conversion array layer (130) through the cooling via (111). A first heat transfer layer (20) is disposed at the hot end of the plurality of semiconductor cooling structures (120).

9. The detection module as described in claim 8, characterized in that, Also includes: The first support structure (310) has a first end and a second end that are arranged opposite to each other in the circumferential direction; The detection component (10) has a first mounting isolation structure (171) and a second mounting isolation structure (172) that are arranged opposite to each other in the circumferential direction; The first mounting isolation structure (171) is disposed at the first end, and the second mounting isolation structure (172) is disposed at the second end.

10. The detection module as described in claim 9, characterized in that, The first heat transfer layer (20) is disposed between the first support structure (310) and the hot ends of the plurality of semiconductor cooling structures (120).

11. The detection module as described in claim 9, characterized in that, Also includes: A control circuit layer (40) is disposed on the surface of the first support structure (310) away from the detection component (10); The control circuit layer (40) is electrically connected to the temperature measuring element on the surface of the photoelectric conversion array layer (130) for monitoring the temperature of the photoelectric conversion array layer (130); The control circuit layer (40) is electrically connected to the semiconductor cooling structure (120) and is used to regulate the voltage of the semiconductor cooling structure (120) according to the temperature of the photoelectric conversion array layer (130).

12. The detection module as described in claim 9, characterized in that, Also includes: The second support structure (320) is disposed between the first end and the second end of the first support structure (310); The second support structure (320) is integrally formed with the first support structure (310).

13. The detection module as described in claim 12, characterized in that, Also includes: The second heat transfer layer (50) is disposed between the first end and the second end of the first support structure (310), and the second heat transfer layer (50) is disposed close to the second support structure (320).

14. The detection module as described in claim 9, characterized in that, Also includes: The second sealing and isolation structure (60) surrounds and forms the second receiving space (610); The first support structure (310), the plurality of arranged detection components (10) and the first heat transfer layer (20) are disposed in the second accommodating space (610).

15. The detection module as described in claim 14, characterized in that, Also includes: The cap structure (620) is fastened to the second sealing and isolation structure (60).

16. A detection device, characterized in that, Includes the detection module as described in any one of claims 8 to 15.

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