Gas conveying device and gas passage module for semiconductor processing equipment

Abstract

The utility model relates to a gas conveying device and a gas passage module for semiconductor processing equipment, which is characterized in that a clean gas inlet pipeline, a first reaction gas inlet pipeline, a second reaction gas inlet pipeline, a common pipeline and a main gas outlet pipeline are arranged in a module main body of the gas passage module of the gas conveying device of the semiconductor processing equipment; the pipelines with the minimum number are adopted and matched with the first control valve and the second control valve to control connection and disconnection between the gas inlet and the gas outlet of each pipeline, so that reaction gas and clean gas are alternately introduced. By arranging the first reaction gas exhaust pipeline and the second reaction gas exhaust pipeline in the module main body, it is ensured that the first reaction gas flows in the first reaction gas inlet pipeline all the time and the second reaction gas flows in the second reaction gas inlet pipeline all the time, the switching time is shortened, and rapid switching of different gases is achieved. The exhaust valve is arranged on the exhaust pipeline to reduce sudden change of pressure in the pipeline when the gas is switched every time, so that stable switching of the gas is ensured.

Description

TECHNICAL FIELD

[0001] The utility model relates to the field of semiconductor manufacturing, especially relate to a gas delivery device and gas passage module for semiconductor processing equipment. BACKGROUND

[0002] In the semiconductor processing, different reaction gases are needed to be introduced into the semiconductor processing equipment to process the substrates in the reaction chamber, and cleaning gas is needed to be introduced to clean, and the switching of different gases needs to be realized. The gas delivery device currently used is difficult to realize fast switching, has slow response time and inaccurate flow control, which not only affects the efficiency of semiconductor processing, but also may reduce the performance and reliability of the final product.

[0003] The statements herein only provide background technology related to the utility model, and do not necessarily constitute prior art. SUMMARY

[0004] The utility model discloses a gas delivery device and gas passage module for semiconductor processing equipment, which alternately introduces reaction gas and cleaning gas into the reaction chamber of the semiconductor processing equipment, shortens the switching time, realizes the fast switching of different gases, and ensures the flow stability during the switching process.

[0005] In order to achieve the above-mentioned purpose, the utility model provides a gas passage module, which comprises a module main body.

[0006] The module main body is provided with a cleaning gas inlet pipeline, a first reaction gas inlet pipeline and a second reaction gas inlet pipeline, and a common pipeline and a main outlet pipeline.

[0007] The cleaning gas inlet pipeline, the common pipeline and the main outlet pipeline form a flow path of cleaning gas.

[0008] The first reaction gas inlet pipeline, the common pipeline and the main outlet pipeline form a flow path of the first reaction gas.

[0009] The second reaction gas inlet pipeline and the main outlet pipeline form a flow path of the second reaction gas.

[0010] The module main body is further provided with:

[0011] A first reaction gas exhaust pipeline, which is in communication with the first reaction gas inlet pipeline;

[0012] A second reaction gas exhaust pipeline, which is in communication with the second reaction gas inlet pipeline.

[0013] The first reaction gas exhaust pipeline comprises a first exhaust control pipeline, the first exhaust control pipeline comprises a first section pipeline and a second section pipeline, the first section pipeline of the first exhaust control pipeline is communicated with the first reaction gas inlet pipeline, and the second section pipeline of the first exhaust control pipeline is communicated with an external air extraction device.

[0014] The second reaction gas exhaust pipeline comprises a second exhaust control pipeline, the second exhaust control pipeline comprises a first section pipeline and a second section pipeline, the first section pipeline of the second exhaust control pipeline is communicated with the second reaction gas inlet pipeline, and the second section pipeline of the second exhaust control pipeline is communicated with an external air extraction device.

[0015] The inlet and outlet of the cleaning gas inlet pipeline are arranged on different surfaces of the module body.

[0016] The inlet and outlet of the first reaction gas inlet pipeline are arranged on different surfaces of the module body.

[0017] The inlet and outlet of the second reaction gas inlet pipeline are arranged on different surfaces of the module body.

[0018] The inlet and outlet of the main exhaust pipeline are arranged on different surfaces of the module body.

[0019] The outlet of the cleaning gas inlet pipeline, the outlet of the first reaction gas inlet pipeline, and the inlet of the common pipeline are arranged on the same surface of the module body.

[0020] The outlet of the second reaction gas inlet pipeline, the outlet of the common pipeline, and the inlet of the main exhaust pipeline are arranged on the same surface of the module body.

[0021] Optionally, the inlet and outlet of the common pipeline are arranged on different surfaces of the module body.

[0022] Optionally, the inlet and outlet of the common pipeline are arranged on the same surface of the module body.

[0023] The inlet of the first reaction gas exhaust pipeline is communicated with the first reaction gas inlet pipeline, and the outlet of the first reaction gas exhaust pipeline is arranged on a surface of the module body.

[0024] The inlet of the second reaction gas exhaust pipeline is communicated with the second reaction gas inlet pipeline, and the outlet of the second reaction gas exhaust pipeline is arranged on a surface of the module body.

[0025] The intake port of the first section of the first exhaust control pipeline is communicated with the first reaction gas intake pipeline, the exhaust port of the first section of the first exhaust control pipeline and the intake port of the second section of the first exhaust control pipeline are arranged on the same surface of the module body, and the exhaust port of the second section of the first exhaust control pipeline is communicated with an external air extraction device.

[0026] The exhaust port of the first section of the first exhaust control pipeline and the intake port of the second section of the first exhaust control pipeline are arranged on different surfaces of the module body from the clean gas outlet of the clean gas intake pipeline, the first reaction gas outlet of the first reaction gas intake pipeline and the intake port of the common pipeline.

[0027] The intake port of the first section of the second exhaust control pipeline is communicated with the second reaction gas intake pipeline, the exhaust port of the first section of the second exhaust control pipeline and the intake port of the second section of the second exhaust control pipeline are arranged on the same surface of the module body, and the exhaust port of the second section of the second exhaust control pipeline is communicated with an external air extraction device.

[0028] The exhaust port of the first section of the second exhaust control pipeline and the intake port of the second section of the second exhaust control pipeline are arranged on different surfaces of the module body from the second reaction gas outlet of the second reaction gas intake pipeline, the common outlet of the common pipeline and the intake port of the main exhaust pipeline.

[0029] The clean gas intake pipeline comprises a first section and a second section, the first section is communicated with the intake port of the clean gas intake pipeline, the second section is communicated with the outlet of the clean gas intake pipeline, and the first section and the second section are perpendicular to each other.

[0030] The main exhaust pipeline comprises a first section and a second section, the first section is communicated with the intake port of the main exhaust pipeline, the second section is communicated with the outlet of the main exhaust pipeline, and the first section and the second section are perpendicular to each other.

[0031] The common pipeline comprises a first section and a second section, the first section is communicated with the intake port of the common pipeline, the second section is communicated with the outlet of the common pipeline, and the first section and the second section are connected at an angle, and the angle ranges from 60° to 150°.

[0032] The module body is made of an alloy material.

[0033] The utility model also provides a gas delivery device for semiconductor processing equipment, the gas delivery device is used for delivering gas to the reaction cavity of the semiconductor processing equipment, and the gas delivery device comprises:

[0034] The gas passage module, the gas outlet of the main gas outlet pipeline on the gas passage module is communicated with the reaction cavity;

[0035] The first control valve is connected with the gas outlet of the cleaning gas inlet pipeline, the gas outlet of the first reaction gas inlet pipeline and the gas inlet of the common pipeline, and the first control valve controls the on-off of any two of the gas outlet of the cleaning gas inlet pipeline, the gas outlet of the first reaction gas inlet pipeline and the gas inlet of the common pipeline.

[0036] The second control valve is connected with the gas inlet of the main gas outlet pipeline, the gas outlet of the second reaction gas inlet pipeline and the gas outlet of the common pipeline, and the second control valve controls the on-off of any two of the gas inlet of the main gas outlet pipeline, the gas outlet of the second reaction gas inlet pipeline and the gas outlet of the common pipeline.

[0037] The gas delivery device further comprises:

[0038] The first exhaust valve is connected with the exhaust port of the first section of the first exhaust control pipeline and the gas inlet of the second section of the first exhaust control pipeline, and the first exhaust valve controls the on-off of the exhaust port of the first section of the first exhaust control pipeline and the gas inlet of the second section of the first exhaust control pipeline.

[0039] The second exhaust valve is connected with the exhaust port of the first section of the second exhaust control pipeline and the gas inlet of the second section of the second exhaust control pipeline, and the second exhaust valve controls the on-off of the exhaust port of the first section of the second exhaust control pipeline and the gas inlet of the second section of the second exhaust control pipeline.

[0040] The gas delivery device comprises a controller, and the controller is connected with the first control valve, the second control valve, the first exhaust valve and the second exhaust valve.

[0041] Mass flow controllers are installed on the first control valve and the second control valve, and mass flow controllers are installed on the first exhaust valve and the second exhaust valve.

[0042] The utility model also provides a semiconductor processing equipment, which comprises:

[0043] A reaction cavity comprises a susceptor for supporting a wafer.

[0044] The gas delivery device is used for introducing reaction gas into the reaction cavity to process the substrate, or introducing cleaning gas into the reaction cavity to clean the gas path.

[0045] A cleaning gas source is in communication with the inlet of the cleaning gas inlet pipeline on the gas passage module, and is used for introducing cleaning gas into the gas passage module.

[0046] A first reaction gas source is in communication with the inlet of the first reaction gas inlet pipeline on the gas passage module, and is used for introducing first reaction gas into the gas passage module.

[0047] A second reaction gas source is in communication with the inlet of the second reaction gas inlet pipeline on the gas passage module, and is used for introducing second reaction gas into the gas passage module.

[0048] A first gas exhaust pump is in communication with the exhaust outlet of the first reaction gas exhaust pipeline on the gas passage module, and is used for exhausting the first reaction gas from the gas passage module.

[0049] A second gas exhaust pump is in communication with the exhaust outlet of the second reaction gas exhaust pipeline on the gas passage module, and is used for exhausting the second reaction gas from the gas passage module.

[0050] The first gas exhaust pump is in communication with the first reaction gas source, and is used for delivering the first reaction gas exhausted from the gas passage module to the first reaction gas source; and the second gas exhaust pump is in communication with the second reaction gas source, and is used for delivering the second reaction gas exhausted from the gas passage module to the second reaction gas source.

[0051] The semiconductor processing equipment is a deposition equipment or an etching equipment.

[0052] The cleaning gas inlet pipeline, the first reaction gas inlet pipeline and the second reaction gas inlet pipeline, as well as the shared pipeline and the main exhaust pipeline are arranged in the module main body of the gas passage module of the gas delivery device of the semiconductor processing equipment, the communication or the shutoff between the inlets and the exhaust outlets of the pipelines are controlled by using the least number of pipelines and cooperating with the first control valve and the second control valve, the on-off of the pipelines is switched by the valve, and the reaction gas and the cleaning gas are alternately introduced.

[0053] By setting the first reaction gas exhaust pipeline and the second reaction gas exhaust pipeline in the module body, the cleaning gas, the first reaction gas and the second reaction gas are continuously delivered into the gas passage module whether in the deposition process or the etching process, or in the cleaning operation, the cleaning gas is always flowing in the cleaning gas inlet pipeline, the first reaction gas is always flowing in the first reaction gas inlet pipeline, and the second reaction gas is always flowing in the second reaction gas inlet pipeline, the different gases are alternately or simultaneously switched into the reaction cavity of the semiconductor processing equipment by the first control valve and the second control valve, the switching time is shortened, and the rapid switching of different gases is realized.

[0054] By setting the exhaust valve on the first reaction gas exhaust pipeline to control the exhaust flow of the first reaction gas, the gas pressure in the first reaction gas inlet pipeline is maintained stable, and by setting the exhaust valve on the second reaction gas exhaust pipeline to control the exhaust flow of the second reaction gas, the gas pressure in the second reaction gas inlet pipeline is maintained stable, the pressure in the pipeline is suddenly changed when the gas is switched each time, and the smooth switching of the gas is ensured.

[0055] By manufacturing the pipeline into multiple sections and setting the gas inlets and outlets of the pipeline on different surfaces of the module body, the pipeline is machined, the machining difficulty is reduced, and the cost is saved.

[0056] By setting the first control valve and the second control valve which are both three-way valves on the same surface of the module body, and setting the first exhaust valve and the second exhaust valve which are both two-way valves on the same surface of the module body, the foolproof design is realized, human operation errors in installing the valves are avoided, and the installation difficulty is reduced. BRIEF DESCRIPTION OF DRAWINGS

[0057] Fig. 1 is a structural schematic view of a semiconductor processing equipment provided by the utility model.

[0058] Fig. 2 is a structural schematic view of a gas delivery device provided by an embodiment of the utility model.

[0059] Fig. 3 is a structural schematic view of a gas delivery device provided by another embodiment of the utility model. DETAILED DESCRIPTION

[0060] The preferred embodiments of the utility model are specifically explained below. Figs. 1-3 As

[0061] Fig. 1 ​As shown, the utility model provides a kind of semiconductor processing equipment, including reaction cavity 1, the pedestal 2 is arranged in the reaction cavity 1, and the pedestal 2 is used to support wafer W.The semiconductor processing equipment can be deposition equipment, when deposition process is carried out, by gas delivery device 3, first reaction gas from first reaction gas source 5 and second reaction gas from second reaction gas source 6 are introduced into the reaction cavity 1, and thin film is generated on the surface of wafer W.In gas switching process, by the gas delivery device 3, cleaning gas from cleaning gas source 4 is introduced into gas delivery device 3 and the reaction cavity 1, and the gas path is purged.The semiconductor processing equipment can also be etching equipment, when etching process is carried out, by the gas delivery device 3, first reaction gas from the first reaction gas source 5 and second reaction gas from the second reaction gas source 6 are introduced into the reaction cavity 1, and first reaction gas and second reaction gas are excited to plasma using radio frequency electric field, and wafer W is etched.After etching process ends, by the gas delivery device 3, cleaning gas from the cleaning gas source 4 is introduced into the reaction cavity 1, and the reaction cavity 1 is cleaned.

[0062] As Fig. 2 Shown, in an embodiment of the utility model, the gas delivery device 3 includes: gas passage module 31, and first control valve 32 and second control valve 33 are arranged on the gas passage module 31.

[0063] The gas passage module 31 comprises a module body 301 made of an alloy material, which is easy to process, light in weight and has high strength and high rigidity. The module body 301 is provided with a cleaning gas inlet pipe 302, a first reaction gas inlet pipe 303 and a second reaction gas inlet pipe 304, and a common pipe 305 and a main outlet pipe 306. The inlet 3021 of the cleaning gas inlet pipe 302 is communicated with the cleaning gas source 4, the cleaning gas inlet pipe 302, the common pipe 305 and the main outlet pipe 306 form a flow path of cleaning gas, the outlet 3062 of the main outlet pipe 306 is communicated with the reaction chamber 1, and the cleaning gas from the cleaning gas source 4 is blown into the gas passage module 31 through the flow path of cleaning gas to purge the common pipe 305 and the main outlet pipe 306. The inlet 3031 of the first reaction gas inlet pipe 303 is communicated with the first reaction gas source 5, the first reaction gas inlet pipe 303, the common pipe 305 and the main outlet pipe 306 form a flow path of first reaction gas, and the first reaction gas from the first reaction gas source 5 is introduced into the reaction chamber 1 through the flow path of first reaction gas. The inlet 3041 of the second reaction gas inlet pipe 304 is communicated with the second reaction gas source 6, the second reaction gas inlet pipe 304 and the main outlet pipe 306 form a flow path of second reaction gas, and the second reaction gas from the second reaction gas source 6 is introduced into the reaction chamber 1 through the flow path of second reaction gas.

[0064] The first control valve 32 is a three-way valve, which is connected with the outlet 3022 of the cleaning gas inlet pipe 302, the outlet 3032 of the first reaction gas inlet pipe 303 and the inlet 3051 of the common pipe 305 respectively, and controls the on-off of any two of the outlet 3022 of the cleaning gas inlet pipe 302, the outlet 3032 of the first reaction gas inlet pipe 303 and the inlet 3051 of the common pipe 305.

[0065] The second control valve 33 is a three-way valve, which is connected with the inlet 3061 of the main outlet pipe 306, the outlet 3042 of the second reaction gas inlet pipe 304 and the outlet 3052 of the common pipe 305, and controls the on-off of any two of the inlet 3061 of the main outlet pipe 306, the outlet 3042 of the second reaction gas inlet pipe 304 and the outlet 3052 of the common pipe 305.

[0066] When the deposition process or the etching process is performed, if the first reaction gas needs to be introduced into the reaction chamber 1, the first control valve 32 controls the gas outlet 3022 of the cleaning gas inlet pipeline 302 to be closed, the first control valve 32 controls the gas outlet 3032 of the first reaction gas inlet pipeline 303 and the gas inlet 3051 of the common pipeline 305 to be communicated, and the second control valve 33 controls the gas outlet 3052 of the common pipeline 305 and the gas inlet 3061 of the main gas outlet pipeline 306 to be communicated. At this time, the first reaction gas from the first reaction gas source 5 is introduced into the reaction chamber 1 through the flow path of the first reaction gas composed of the first reaction gas inlet pipeline 303, the common pipeline 305 and the main gas outlet pipeline 306. If the second reaction gas needs to be introduced after the first reaction gas is introduced, the cleaning operation is performed first. Specifically, the first control valve 32 controls the gas outlet 3032 of the first reaction gas inlet pipeline 303 to be closed, the first control valve 32 controls the gas outlet 3022 of the cleaning gas inlet pipeline 302 and the gas inlet 3051 of the common pipeline 305 to be communicated, the second control valve 33 controls the gas outlet 3042 of the second reaction gas inlet pipeline 304 to be closed, and the second control valve 33 controls the gas outlet 3052 of the common pipeline 305 and the gas inlet 3061 of the main gas outlet pipeline 306 to be communicated. At this time, the cleaning gas from the cleaning gas source 4 is introduced into the reaction chamber 1 through the flow path of the cleaning gas composed of the cleaning gas inlet pipeline 302, the common pipeline 305 and the main gas outlet pipeline 306. The length of the flow path of the cleaning gas is greater than the length of the flow path of the first reaction gas, and the length of the flow path of the cleaning gas is also greater than the length of the flow path of the second reaction gas. Therefore, during the introduction of the cleaning gas, the common pipeline 305 and the main gas outlet pipeline 306 can be flushed to prevent the first reaction gas from remaining in the pipeline and causing pollution. Then the second reaction gas introduction operation is performed. Specifically, the second control valve 33 controls the gas outlet 3042 of the second reaction gas inlet pipeline 304 and the gas inlet 3061 of the main gas outlet pipeline 306 to be communicated. At this time, the second reaction gas from the second reaction gas source 6 is introduced into the reaction chamber 1 through the flow path of the second reaction gas composed of the second reaction gas inlet pipeline 304 and the main gas outlet pipeline 306. If the first reaction gas and the second reaction gas need to be alternately introduced into the reaction chamber 1, the cleaning gas is purged by controlling the first control valve 32 and the second control valve 33 before the gas is switched. Details are not described here.

[0067] By setting the cleaning gas inlet pipeline 302, the first reaction gas inlet pipeline 303 and the second reaction gas inlet pipeline 304, and the common pipeline 305 and the main outlet pipeline 306 in the module body 301, and by using the least number of pipelines and cooperating with the first control valve 32 and the second control valve 33 to control the communication or shutoff between the inlet and the outlet of each pipeline, the on-off of the pipeline is switched by the valve, the alternating input of the reaction gas and the cleaning gas is realized, and the contact of the two gases before entering the reaction chamber is avoided.

[0068] The first reaction gas outlet pipeline 307 and the second reaction gas outlet pipeline 308 are also set in the module body 301, the inlet 3071 of the first reaction gas outlet pipeline 307 is in communication with the first reaction gas inlet pipeline 303, the outlet 3072 of the first reaction gas outlet pipeline 307 is in communication with the first air pump 7, the inlet 3081 of the second reaction gas outlet pipeline 308 is in communication with the second reaction gas inlet pipeline 304, and the outlet 3082 of the second reaction gas outlet pipeline 308 is in communication with the second air pump 8. In some embodiments, the first air pump 7 and the second air pump 8 can also be combined into one air pump.

[0069] Regardless of whether the deposition process or the etching process is in progress, or the cleaning operation is in progress, the cleaning gas, the first reaction gas and the second reaction gas are continuously fed into the gas passage module 31, and the first control valve 32 and the second control valve 33 are used to switch different gases to be alternately or simultaneously introduced into the reaction chamber 1. When the first reaction gas and / or the second reaction gas is introduced into the reaction chamber 1, even if the first control valve 32 closes the gas outlet 3022 of the cleaning gas inlet pipeline 302, the cleaning gas inlet pipeline 302 is still full of cleaning gas due to the continuous feeding of the cleaning gas by the cleaning gas source 4, and after the first control valve 32 controls the communication between the gas outlet 3022 of the cleaning gas inlet pipeline 302 and the gas inlet 3051 of the common pipeline 305, the cleaning gas can first quickly enter the common pipeline 305, thereby shortening the switching time and realizing the rapid switching of different gases. When the cleaning gas is introduced into the reaction chamber 1, the first control valve 32 closes the gas outlet 3032 of the first reaction gas inlet pipeline 303, and the first reaction gas cannot enter the common pipeline 305. Since the first reaction gas source 5 continuously feeds the first reaction gas, the first reaction gas enters the first reaction gas exhaust pipeline 307 through the first reaction gas inlet pipeline 303, and is finally exhausted from the gas passage module 31. Since the first reaction gas inlet pipeline 303 is always flowing with the first reaction gas, after the first control valve 32 controls the communication between the gas outlet 3032 of the first reaction gas inlet pipeline 303 and the gas inlet 3051 of the common pipeline 305, the first reaction gas can first quickly enter the common pipeline 305, thereby shortening the switching time and realizing the rapid switching of different gases. Similarly, the second control valve 33 closes the gas outlet 3042 of the second reaction gas inlet pipeline 304, and the second reaction gas cannot enter the main gas outlet pipeline 306. Since the second reaction gas source 6 continuously feeds the second reaction gas, the second reaction gas enters the second reaction gas exhaust pipeline 308 through the second reaction gas inlet pipeline 304, and is finally exhausted from the gas passage module 31. Since the second reaction gas inlet pipeline 304 is always flowing with the second reaction gas, after the second control valve 33 controls the communication between the gas outlet 3042 of the second reaction gas inlet pipeline 304 and the gas inlet 3061 of the main gas outlet pipeline 306, the second reaction gas can first quickly enter the main gas outlet pipeline 306, thereby shortening the switching time and realizing the rapid switching of different gases.

[0070] Further, the first reaction gas exhaust pipeline 307 comprises a first exhaust control pipeline 309, the first exhaust control pipeline 309 comprises a first pipeline 309-1 and a second pipeline 309-2, the gas inlet 309-11 of the first pipeline 309-1 of the first exhaust control pipeline 309 is communicated with the first reaction gas inlet pipeline 303, the gas outlet 309-12 of the first pipeline 309-1 of the first exhaust control pipeline 309 and the gas inlet 309-21 of the second pipeline 309-2 of the first exhaust control pipeline 309 are connected with a first exhaust valve 34, the first exhaust valve 34 is a double-way valve, the first exhaust valve 34 controls the on-off of the gas outlet 309-12 of the first pipeline 309-1 of the first exhaust control pipeline 309 and the gas inlet 309-21 of the second pipeline 309-2 of the first exhaust control pipeline 309, and the gas outlet 309-22 of the second pipeline 309-2 of the first exhaust control pipeline 309 is connected with an external air extraction device. The exhaust valve arranged on the first reaction gas exhaust pipeline 307 controls the exhaust flow of the first reaction gas, maintains the stable gas pressure in the first reaction gas inlet pipeline 303, reduces the sudden change of the pressure in the pipeline when the gas is switched each time, and ensures the smooth switching of the gas.

[0071] Likewise, the second reaction gas exhaust pipeline 308 comprises a second exhaust control pipeline 310, the second exhaust control pipeline 310 comprises a first pipeline 310-1 and a second pipeline 310-2, the gas inlet 310-11 of the first pipeline 310-1 of the second exhaust control pipeline 310 is communicated with the second reaction gas inlet pipeline 304, the gas outlet 310-12 of the first pipeline 310-1 of the second exhaust control pipeline 310 and the gas inlet 310-21 of the second pipeline 310-2 of the second exhaust control pipeline 310 are connected with a second exhaust valve 35, the second exhaust valve 35 is a double-way valve, the second exhaust valve 35 controls the on-off of the gas outlet 310-12 of the first pipeline 310-1 of the second exhaust control pipeline 310 and the gas inlet 310-21 of the second pipeline 310-2 of the second exhaust control pipeline 310, and the gas outlet 310-22 of the second pipeline 310-2 of the second exhaust control pipeline 310 is communicated with an external air extraction device. The exhaust valve arranged on the second reaction gas exhaust pipeline 308 controls the exhaust flow of the second reaction gas, maintains the stable gas pressure in the second reaction gas inlet pipeline 304, reduces the sudden change of the pressure in the pipeline when the gas is switched each time, and ensures the smooth switching of the gas.

[0072] In the embodiment, the gas conveying device 3 further comprises a controller (not shown in the figure) connected to the first control valve 32, the second control valve 33, the first exhaust valve 34 and the second exhaust valve 35, so that the first control valve 32, the second control valve 33, the first exhaust valve 34 and the second exhaust valve 35 are controlled by the controller, thereby realizing unified control of the valves, improving the gas switching efficiency and obtaining a smooth gas switching effect.

[0073] Further, the first control valve 32, the second control valve 33, the first exhaust valve 34 and the second exhaust valve 35 are all provided with mass flow controllers (not shown in the figure), which are used to monitor the gas flow, thereby keeping the gas pressure in the pipeline stable and preventing flow fluctuation, and then guiding the controller to comprehensively control the valves, further improving the gas switching efficiency and obtaining a smooth gas switching effect.

[0074] In another embodiment of the utility model, the first exhaust pump 7 is communicated with the first reaction gas source 5, so that the first reaction gas discharged from the gas passage module 31 through the first exhaust pump 7 can be recycled and conveyed back to the first reaction gas source 5, and the first reaction gas source 5, the first reaction gas inlet pipeline 303, the first reaction gas exhaust pipeline 307 and the first exhaust pump 7 form a closed loop, thereby realizing the recycling of the first reaction gas and preventing gas waste. Similarly, the second exhaust pump 8 is communicated with the second reaction gas source 6, so that the second reaction gas discharged from the gas passage module 31 through the second exhaust pump 8 can be recycled and conveyed back to the second reaction gas source 6, and the second reaction gas source 6, the second reaction gas inlet pipeline 304, the second reaction gas exhaust pipeline 308 and the second exhaust pump 8 form a closed loop, thereby realizing the recycling of the second reaction gas and preventing gas waste.

[0075] In other embodiments of the utility model, the clean gas inlet pipeline 302 includes first section pipeline 302-1 and second section pipeline 302-2, first section pipeline 302-1 communicates with the gas inlet 3021 of clean gas inlet pipeline 302, second section pipeline 302-2 communicates with the gas outlet 3022 of clean gas inlet pipeline 302, the gas inlet 3021 and gas outlet 3022 of clean gas inlet pipeline 302 are arranged on the different surfaces of module main body 301, and first section pipeline 302-1 and second section pipeline 302-2 are perpendicular to each other. The gas inlet 3021 and gas outlet 3022 of clean gas inlet pipeline 302 are connected by first section pipeline 302-1 and second section pipeline 302-2, and the gas inlet 3021 and gas outlet 3022 are arranged on the different surfaces of module main body 301, which is beneficial to the perpendicular formation of first section pipeline 302-1 and second section pipeline 302-2, facilitates the machining of pipeline, reduces the processing difficulty and saves the cost.

[0076] The gas inlet 3031 and gas outlet 3032 of first reaction gas inlet pipeline 303 are arranged on the different surfaces of module main body 301, the gas outlet 3072 of first reaction gas outlet pipeline 307 is arranged on the surface of module main body 301, which facilitates the machining of pipeline, reduces the processing difficulty and saves the cost. Similarly, the gas inlet 3041 and gas outlet 3042 of second reaction gas inlet pipeline 304 are arranged on the different surfaces of module main body 301, and the gas outlet 3082 of second reaction gas outlet pipeline 308 is arranged on the surface of module main body 301, which facilitates the machining of pipeline, reduces the processing difficulty and saves the cost.

[0077] The main gas outlet pipeline 306 includes first section pipeline 306-1 and second section pipeline 306-2, first section pipeline 306-1 communicates with the gas inlet 3061 of main gas outlet pipeline 306, and second section pipeline 306-2 communicates with the gas outlet 3062 of main gas outlet pipeline 306, the gas inlet 3061 and gas outlet 3062 of main gas outlet pipeline 306 are arranged on the different surfaces of module main body 301, and first section pipeline 306-1 and second section pipeline 306-2 are perpendicular to each other. The gas inlet 3061 and gas outlet 3062 of main gas outlet pipeline 306 are connected by first section pipeline 306-1 and second section pipeline 306-2, and the gas inlet 3061 and gas outlet 3062 are arranged on the different surfaces of module main body 301, which is beneficial to the perpendicular formation of first section pipeline 306-1 and second section pipeline 306-2, facilitates the machining of pipeline, reduces the processing difficulty and saves the cost.

[0078] Further, the gas outlet 3022 of the cleaning gas inlet pipe 302, the gas outlet 3032 of the first reaction gas inlet pipe 303, and the gas inlet 3051 of the common pipe 305 are arranged on the same surface of the module body 301, facilitating installation of the first control valve 32. The gas outlet 3042 of the second reaction gas inlet pipe 304, the gas outlet 3052 of the common pipe 305, and the gas inlet 3061 of the main gas outlet pipe 306 are arranged on the same surface of the module body 301, facilitating installation of the second control valve 33. Similarly, the gas outlet 309-12 of the first section pipe 309-1 of the first exhaust control pipe 309 and the gas inlet 309-21 of the second section pipe 309-2 of the first exhaust control pipe 309 are arranged on the same surface of the module body 301, facilitating installation of the first exhaust valve 34. The gas outlet 310-12 of the first section pipe 310-1 of the second exhaust control pipe 310 and the gas inlet 310-21 of the second section pipe 310-2 of the second exhaust control pipe 310 are arranged on the same surface of the module body 301, facilitating installation of the second exhaust valve 35.

[0079] Meanwhile, the gas outlet 309-12 of the first section pipe 309-1 of the first exhaust control pipe 309 and the gas inlet 309-21 of the second section pipe 309-2 of the first exhaust control pipe 309 are arranged on different surfaces of the module body 301 from the gas outlet 3022 of the cleaning gas inlet pipe 302, the gas outlet 3032 of the first reaction gas inlet pipe 303, and the gas inlet 3051 of the common pipe 305, so that the first exhaust valve 34 and the first control valve 32 are arranged on different surfaces of the module body 301. Since the first section pipe 309-1 of the first exhaust control pipe 309 connected to the first exhaust valve 34 and the first reaction gas inlet pipe 303 connected to the first control valve 32 are in communication with each other, arranging the first exhaust valve 34 and the first control valve 32 on different surfaces of the module body 301 can facilitate machining of the first section pipe 309-1 of the first exhaust control pipe 309, making it easy to be in communication with the first reaction gas inlet pipe 303, reducing machining difficulty and saving cost.

[0080] Similarly, the exhaust port 310-12 of the first section pipe 310-1 of the second exhaust control pipe 310 and the intake port 310-21 of the second section pipe 310-2 of the second exhaust control pipe 310 are arranged on different surfaces of the module body 301, so that the second exhaust valve 35 and the second control valve 33 are located on different surfaces of the module body 301. Since the first section pipe 310-1 of the second exhaust control pipe 310 connected with the second exhaust valve 35 is communicated with the second reaction gas intake pipe 304, arranging the second exhaust valve 35 and the second control valve 33 on different surfaces of the module body 301 can facilitate machining the first section pipe 310-1 of the second exhaust control pipe 310, so that the first section pipe 310-1 is easily communicated with the second reaction gas intake pipe 304, thereby reducing the machining difficulty and saving the cost.

[0081] In an embodiment of the present application, the common pipe 305 comprises a first section pipe 305-1 and a second section pipe 305-2, the first section pipe 305-1 is communicated with the intake port 3051 of the common pipe 305, and the second section pipe 305-2 is communicated with the exhaust port 3052 of the common pipe 305. As shown in Fig. 2 The intake port 3051 and the exhaust port 3052 of the common pipe 305 are arranged on different surfaces of the module body 301, so that the first section pipe 305-1 and the second section pipe 305-2 can be connected perpendicularly, and then the first control valve 32 connected with the first section pipe 305-1 and the second control valve 33 connected with the second section pipe 305-2 are located on different surfaces of the module body 301. Such arrangement facilitates machining the first section pipe 305-1 and the second section pipe 305-2, thereby reducing the machining difficulty and saving the cost. Further, the second exhaust valve 35 and the first control valve 32 can be arranged on the same surface of the module body 301, and correspondingly, the first exhaust valve 34 and the second control valve 33 are arranged on the same surface of the module body 301. By arranging the two valves on the same surface of the module body 301, the operation space can be saved and the operation steps can be simplified.

[0082] As shown in Fig. 3As shown, in another embodiment of the present application, the air inlet 3051 and the air outlet 3052 of the common pipeline 305 are arranged on the same surface of the module body 301, so that the first control valve 32 connected to the first pipeline 305-1 and the second control valve 33 connected to the second pipeline 305-2 are located on the same surface of the module body 301, at this time, the first pipeline 305-1 and the second pipeline 305-2 can have a connection angle α, the connection angle α ranges from 60° to 150°, which is also relatively easy to realize machining. Further, the first exhaust valve 34 and the second exhaust valve 35 are arranged on the same surface of the module body 301 to save operation space and simplify operation steps. By arranging the first control valve 32 and the second control valve 33 which are both three-way valves on the same surface of the module body 301, and arranging the first exhaust valve 34 and the second exhaust valve 35 which are both two-way valves on the same surface of the module body 301, a foolproof design is realized, human operation errors during valve installation are avoided, and installation difficulty is reduced.

[0083] The present application realizes the alternating introduction of reaction gas and cleaning gas by arranging the first control valve 32 and the second control valve 33 to control the communication or shutoff between the air inlets and air outlets of each pipeline with the least number of pipelines.

[0084] By arranging the first reaction gas exhaust pipeline 307 and the second reaction gas exhaust pipeline 308 in the module body 301, cleaning gas, first reaction gas and second reaction gas are continuously delivered into the gas passage module 31 during deposition process or etching process, the cleaning gas inlet pipeline 302 always flows with cleaning gas, the first reaction gas inlet pipeline 303 always flows with first reaction gas, and the second reaction gas inlet pipeline 304 always flows with second reaction gas, the first control valve 32 and the second control valve 33 are used to switch different gases to be alternately or simultaneously introduced into the reaction cavity 1, the switching time is shortened, and the rapid switching of different gases is realized.

[0085] The exhaust valve is arranged on the first reaction gas exhaust pipeline 307 to control the exhaust flow of the first reaction gas, the air pressure in the first reaction gas inlet pipeline 303 is maintained stable, the exhaust valve is arranged on the second reaction gas exhaust pipeline 308 to control the exhaust flow of the second reaction gas, the air pressure in the second reaction gas inlet pipeline 304 is maintained stable, the pressure in the pipeline is suddenly changed when the gas is switched each time, and stable gas switching is ensured.

[0086] The pipeline is manufactured in multiple sections, and the gas inlet and the gas outlet of the pipeline are arranged on different surfaces of the module body 301 respectively, so that the pipeline is machined, the machining difficulty is reduced, and the cost is saved.

[0087] The first control valve 32 and the second control valve 33 which are both three-way valves are arranged on the same surface of the module body 301, and the first exhaust valve 34 and the second exhaust valve 35 which are both two-way valves are arranged on the same surface of the module body 301, a foolproof design is realized, human operation errors are avoided during installation of the valves, and the installation difficulty is reduced.

[0088] It should be noted that in the embodiments of the present application, the orientations or positional relationships indicated by the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like are based on the orientations or positional relationships shown in the drawings, and are only for the convenience of describing the embodiments, and do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as limiting the present application. In addition, the terms "first", "second", "third" are only for the purpose of description, and cannot be understood as indicating or implying relative importance.

[0089] In the present application, unless otherwise explicitly specified and limited, the terms "mounting", "connection", "connection", "fixing" and the like should be understood in a broad sense, for example, can be fixedly connected, or can be detachably connected, or can be integrated; can be mechanically connected, or can be electrically connected; can be directly connected, or can be indirectly connected through an intermediate medium; can be the communication or interaction relationship between two elements. For ordinary skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0090] It should be understood that the word "comprising" when used in this specification and appended claims specifies the presence of stated features, integers, steps, operations, elements, and / or components, but does not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof.

[0091] It should also be understood that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the present application. As used in this specification and the appended claims, the singular forms "a," "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise.

[0092] It will be further understood that the terms "and / or," as used in this specification, mean any one or more of the associated listed items, as well as combinations of one or more of the associated listed items.

[0093] As used in this specification and the appended claims, the term "if" can be construed to mean "when" or "once" or "in response to determining" or "in response to detecting," depending on the context. Similarly, the phrase "if it is determined" or "if [a described condition or event] is detected" can be construed to mean "once it is determined" or "in response to determining" or "once [the described condition or event] is detected" or "in response to detecting [the described condition or event]," depending on the context.

[0094] Although the present application has been described in detail through the preferred embodiments, it should be understood that the above description is not to be considered as limiting the present application. It will be obvious to a person skilled in the art that various modifications and changes can be made to the application without departing from the scope thereof. It is intended to cover in the appended claims all such modifications and changes as fall within the scope of the application. With regard to the application described herein, the following examples are given which fall within the scope of the present application.

Claims

1. A gas passage module characterized by comprising: The module body comprises: The module body is provided with a cleaning gas inlet pipeline, a first reaction gas inlet pipeline and a second reaction gas inlet pipeline, and a common pipeline and a main outlet pipeline; The cleaning gas inlet pipeline, the common pipeline and the main outlet pipeline form a flow path for cleaning gas; The first reaction gas inlet pipeline, the common pipeline and the main outlet pipeline form a flow path for first reaction gas; The second reaction gas inlet pipeline and the main outlet pipeline form a flow path for second reaction gas.

2. The gas passageway module of claim 1, wherein, The module body is further provided with: A first reaction gas exhaust pipeline in communication with the first reaction gas inlet pipeline; A second reaction gas exhaust pipeline in communication with the second reaction gas inlet pipeline.

3. The gas passageway module of claim 2, wherein, The first reaction gas exhaust pipeline comprises a first exhaust control pipeline, which comprises a first section pipeline and a second section pipeline, the first section pipeline of the first exhaust control pipeline being in communication with the first reaction gas inlet pipeline, and the second section pipeline of the first exhaust control pipeline being in communication with an external air extraction device; The second reaction gas exhaust pipeline comprises a second exhaust control pipeline, which comprises a first section pipeline and a second section pipeline, the first section pipeline of the second exhaust control pipeline being in communication with the second reaction gas inlet pipeline, and the second section pipeline of the second exhaust control pipeline being in communication with an external air extraction device.

4. The gas passageway module of claim 1, wherein, The inlet and outlet of the cleaning gas inlet pipeline are arranged on different surfaces of the module body; The inlet and outlet of the first reaction gas inlet pipeline are arranged on different surfaces of the module body; The inlet and outlet of the second reaction gas inlet pipeline are arranged on different surfaces of the module body; The inlet and outlet of the main outlet pipeline are arranged on different surfaces of the module body; The outlet of the cleaning gas inlet pipeline, the outlet of the first reaction gas inlet pipeline and the inlet of the common pipeline are arranged on the same surface of the module body; The outlet of the second reaction gas inlet pipeline, the outlet of the common pipeline and the inlet of the main outlet pipeline are arranged on the same surface of the module body.

5. The gas passageway module of claim 4, wherein, The inlet and outlet of the common pipeline are arranged on different surfaces of the module body.

6. The gas passageway module of claim 4, wherein, The inlet and outlet of the common pipeline are arranged on the same surface of the module body.

7. The gas passageway module of claim 2, wherein, The inlet of the first reaction gas exhaust pipeline is in communication with the first reaction gas inlet pipeline, and the outlet of the first reaction gas exhaust pipeline is arranged on a surface of the module body; The inlet of the second reaction gas exhaust pipeline is in communication with the second reaction gas inlet pipeline, and the outlet of the second reaction gas exhaust pipeline is arranged on a surface of the module body.

8. The gas passageway module of claim 3, wherein, The intake port of the first section of the first exhaust control pipeline is communicated with the first reaction gas intake pipeline, the exhaust port of the first section of the first exhaust control pipeline and the intake port of the second section of the first exhaust control pipeline are arranged on the same surface of the module body, and the exhaust port of the second section of the first exhaust control pipeline is communicated with an external air extraction device. The exhaust port of the first section of the first exhaust control pipeline and the intake port of the second section of the first exhaust control pipeline are arranged on different surfaces of the module body from the exhaust port of the cleaning gas intake pipeline, the exhaust port of the first reaction gas intake pipeline and the intake port of the common pipeline. The intake port of the first section of the second exhaust control pipeline is communicated with the second reaction gas intake pipeline, the exhaust port of the first section of the second exhaust control pipeline and the intake port of the second section of the second exhaust control pipeline are arranged on the same surface of the module body, and the exhaust port of the second section of the second exhaust control pipeline is communicated with an external air extraction device. The exhaust port of the first section of the second exhaust control pipeline and the intake port of the second section of the second exhaust control pipeline are arranged on different surfaces of the module body from the exhaust port of the second reaction gas intake pipeline, the exhaust port of the common pipeline and the intake port of the main exhaust pipeline.

9. The gas passageway module of claim 4, wherein, The cleaning gas intake pipeline comprises a first section and a second section, the first section is communicated with the intake port of the cleaning gas intake pipeline, the second section is communicated with the exhaust port of the cleaning gas intake pipeline, and the first section and the second section are perpendicular to each other.

10. The gas passageway module of claim 4, wherein, The main exhaust pipeline comprises a first section and a second section, the first section is communicated with the intake port of the main exhaust pipeline, the second section is communicated with the exhaust port of the main exhaust pipeline, and the first section and the second section are perpendicular to each other.

11. The gas passageway module of claim 5 or 6, wherein, The common pipeline comprises a first section and a second section, the first section is communicated with the intake port of the common pipeline, the second section is communicated with the exhaust port of the common pipeline, and the first section and the second section are connected at an angle, and the angle ranges from 60° to 150°.

12. The gas passageway module of claim 1, wherein, The module body is made of an alloy material.

13. A gas delivery apparatus for a semiconductor processing apparatus, characterized by, The gas delivery device is used for delivering gas to a reaction chamber of the semiconductor processing equipment, and comprises: The gas passage module according to any one of claims 1-12, wherein the exhaust port of the main exhaust pipeline of the gas passage module is communicated with the reaction chamber; a first control valve connected with the exhaust port of the cleaning gas intake pipeline, the exhaust port of the first reaction gas intake pipeline and the intake port of the common pipeline, and controlling the on-off of any two of the exhaust port of the cleaning gas intake pipeline, the exhaust port of the first reaction gas intake pipeline and the intake port of the common pipeline; A second control valve is connected to the gas inlet of the main outlet gas line, the gas outlet of the second reaction gas inlet line, and the gas outlet of the common line, and controls the on-off of any two of the gas inlet of the main outlet gas line, the gas outlet of the second reaction gas inlet line, and the gas outlet of the common line.

14. The gas delivery apparatus for a semiconductor processing apparatus as recited in Claim 13, wherein, The gas delivery device further comprises: A first exhaust valve is connected to the gas outlet of the first section of the first exhaust control line and the gas inlet of the second section of the first exhaust control line, and controls the on-off of the gas outlet of the first section of the first exhaust control line and the gas inlet of the second section of the first exhaust control line; A second exhaust valve is connected to the gas outlet of the first section of the second exhaust control line and the gas inlet of the second section of the second exhaust control line, and controls the on-off of the gas outlet of the first section of the second exhaust control line and the gas inlet of the second section of the second exhaust control line.

15. The gas delivery apparatus for a semiconductor processing apparatus as recited in Claim 14, wherein, The gas delivery device comprises a controller connected to the first control valve, the second control valve, the first exhaust valve, and the second exhaust valve.

16. The gas delivery apparatus for a semiconductor processing apparatus as recited in Claim 14, wherein, Mass flow controllers are installed on the first control valve and the second control valve, and mass flow controllers are installed on the first exhaust valve and the second exhaust valve.

17. A semiconductor processing apparatus, characterized by comprising: The gas delivery device comprises: A reaction chamber comprising a susceptor for supporting a substrate; The gas delivery device of any one of claims 13-16 is used for introducing a reaction gas into the reaction chamber to process the substrate, or introducing a cleaning gas into the reaction chamber to clean the gas path; A cleaning gas source in communication with the gas inlet of the cleaning gas inlet line on the gas passage module for introducing a cleaning gas into the gas passage module; A first reaction gas source in communication with the gas inlet of the first reaction gas inlet line on the gas passage module for introducing a first reaction gas into the gas passage module; A second reaction gas source in communication with the gas inlet of the second reaction gas inlet line on the gas passage module for introducing a second reaction gas into the gas passage module; A first exhaust pump in communication with the gas outlet of the first reaction gas exhaust line on the gas passage module for exhausting the first reaction gas out of the gas passage module; A second exhaust pump in communication with the gas outlet of the second reaction gas exhaust line on the gas passage module for exhausting the second reaction gas out of the gas passage module.

18. The semiconductor processing apparatus of claim 17, wherein, The first exhaust pump is in communication with the first reaction gas source for delivering the first reaction gas exhausted out of the gas passage module to the first reaction gas source; and the second exhaust pump is in communication with the second reaction gas source for delivering the second reaction gas exhausted out of the gas passage module to the second reaction gas source.

19. The semiconductor processing apparatus of claim 17, wherein, The semiconductor processing apparatus is a deposition apparatus or an etching apparatus.

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