Uniform heating type silicon wafer drying furnace structure
By setting up staggered hot air units and exhaust plates inside the silicon wafer drying oven, the unevenness caused by single-sided drying is solved, achieving uniform drying and efficient conversion of silicon wafers and reducing the defect rate.
Patent Information
- Application Number
- CN202422103465.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-08-29
- Publication Date
- 2025-11-07
- Estimated Expiration
- 2034-08-29
AI Technical Summary
Existing cartridge-type silicon wafer drying ovens use a single-sided drying method, which results in uneven drying of silicon wafers, affecting conversion efficiency and increasing defect rate.
A uniform heating silicon wafer drying oven structure is designed. By setting staggered hot air units in the drying oven tunnel, the hot air is ensured to be evenly distributed. The staggered hot air units and air outlet plates ensure that the hot air is evenly dispersed, thereby improving the drying efficiency.
This method achieves uniform drying of silicon wafers, improves conversion efficiency, and reduces defect rates.
Smart Images
Figure CN223525505U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The utility model relates to a silicon wafer processing equipment technical field especially relates to a uniform heating formula silicon wafer drying furnace structure. BACKGROUND
[0002] HIT solar cell is a kind of hybrid solar cell using crystalline silicon substrate and amorphous silicon thin film, so-called HIT (Heterojunction with intrinsic Thinlayer) structure is to increase a layer of non-doped (intrinsic) hydrogenated amorphous silicon thin film between P-type hydrogenated amorphous silicon and n-type hydrogenated amorphous silicon and n-type silicon substrate.HIT solar photovoltaic cell substrate is mainly silicon substrate, deposits high-energy-gap silicon nanometer thin film on silicon substrate, and then deposits transparent conductive film on surface layer, and back surface is provided with back surface electric field.By optimizing the surface structure of silicon, the optical absorption loss of transparent conductive oxide layer and a-Si layer can be reduced.
[0003] When preparing HIT solar photovoltaic cell, silicon wafer surface needs to be dried after printing conductive paste, and the current method is to use drying furnace heating, prior art, application number: 2018206261189, a clamp type silicon wafer drying furnace, which uses single-side drying mode, and the drying mode is poor in uniformity, thereby leading to low conversion efficiency of silicon wafer and increasing the defective rate.
[0004] Therefore, it is necessary to design a uniform heating type silicon wafer drying furnace structure to solve the above problems. Utility model content
[0005] The utility model aims at providing a uniform heating type silicon wafer drying furnace structure to overcome the above-mentioned deficiencies existing in the prior art.
[0006] In order to achieve the above-mentioned purpose, the utility model adopts the following technical scheme:
[0007] The utility model relates to a kind of uniform heating type silicon wafer drying furnace structure, it includes equipment support 1 setting on the drying furnace tunnel of equipment support, the conveying mechanism being placed in the drying furnace tunnel and being set on the equipment support, several groups of hot air unit for drying inside tunnel are set on the drying furnace tunnel, it is characterized by: the drying furnace tunnel includes several tunnel shells being set on the equipment support and spliced, air outlet plate is placed in the inside of tunnel shell, and shell mounting plate is installed in the outside of tunnel shell and cooperates hot air unit, every group of tunnel shell is provided with hot air unit on both sides, and the hot air unit on both sides is staggered left and right, the hot air unit includes several groups of air inlet end being respectively set on the one side shell mounting plate and being evenly distributed in the middle position of the shell mounting plate around, air inlet pipe is communicated with the air inlet end, heating device is set in the middle of air inlet pipe, fan is connected to the end of air inlet pipe, and air outlet is placed on the other side shell mounting plate.
[0008] Preferably, a plurality of air outlets are evenly provided on the air outlet plate.
[0009] Preferably, four groups of air inlet ends are provided on the shell mounting plate.
[0010] Preferably, the inside of the tunnel shell is a hollow mechanism.
[0011] The beneficial effects of the utility model are: the technical scheme sets the hot air unit staggered with each other, thereby improving the hot air drying efficiency in the drying furnace tunnel, both sides can be dried, the uniformity of hot air blowing is increased, thereby ensuring the drying efficiency of silicon wafer, so as to improve the conversion efficiency and reduce the defective rate. BRIEF DESCRIPTION OF DRAWINGS
[0012] Fig. 1 It is a structure schematic view of the utility model uniform heating type silicon wafer drying furnace structure.
[0013] Fig. 2 It is a drying furnace tunnel schematic view of the utility model uniform heating type silicon wafer drying furnace structure.
[0014] Fig. 3 It is a hot air unit partial schematic view of the utility model uniform heating type silicon wafer drying furnace structure.
[0015] In the drawing: 2, drying furnace tunnel;4, hot air unit;21, tunnel shell;22, air outlet plate;23, shell mounting plate;41, air inlet end;42, air inlet pipe;43, heating device;45, air outlet. DETAILED DESCRIPTION
[0016] Clearly, the described embodiments are merely a part of the embodiments of the present application, but not all the embodiments. Based on the embodiments of the present application, all the other embodiments obtained by those skilled in the art without creative labor fall within the scope of protection of the present application.
[0017] In the description of the present application, it should be understood that the terms "upper", "lower", "front", "back", "left", "right", "top", "bottom", "inner", "outer" and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and therefore cannot be understood as indicating or implying that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as limiting the present application.
[0018] Referring to Figs. 1 to 3 A uniform heating type silicon wafer drying furnace structure, which comprises an equipment support, a drying furnace tunnel 2 arranged on the equipment support, a conveying mechanism arranged in the drying furnace tunnel and on the equipment support, and a plurality of groups of hot air units 4 arranged on the drying furnace tunnel and used for drying the inside of the tunnel.
[0019] The drying furnace tunnel 2 comprises a plurality of tunnel shells 21 arranged on the equipment support and spliced together, an air outlet plate 22 arranged inside the tunnel shell, and a shell mounting plate 23 arranged outside the tunnel shell and matched with the hot air unit;
[0020] In order to cooperate with the air outlet of the hot air unit and ensure that the hot air can flow out uniformly, a plurality of air outlet holes are uniformly arranged on the air outlet plate;
[0021] In order to ensure that the air volume blown out by the hot air unit 4 to the inside of the silicon wafer is uniform, the two sides of each group of tunnel shells 21 are provided with hot air units, and the hot air units on the two sides are arranged alternately left and right, so as to ensure that the hot air units 4 flow alternately when conveying hot air, and the air volume is uniform, and the silicon wafer conveyed by the conveying mechanism 2 can be blown dry uniformly.
[0022] The hot air unit 4 comprises a plurality of groups of air inlet ends 41 arranged on the one side shell mounting plate 23 and uniformly distributed in the middle position around the shell mounting plate 23, an air inlet pipe 42 connected with the air inlet ends, a heating device 43 arranged in the middle of the air inlet pipe, a fan connected to the end of the air inlet pipe, and an air outlet 45 arranged on the other side shell mounting plate 23;
[0023] In order to improve the heating effect, and ensure the uniformity of air volume and heat, the shell mounting plate 23 is provided with four groups of air inlet end 41, the same in upper or lower air inlet end 41 is a group, air inlet end 41 connects air inlet pipe, and the front end of air inlet end 41 is provided with heating device 43 cooperation air inlet pipe connection, at the same time, the upper and lower air inlet pipe is connected into the fan, and the fan is blown uniformly, and the wind is divided into two parts and is conveyed to the upper and lower air pipe respectively, after being heated by heating device 43, hot air is blown and flows into air inlet end 41, and then flows into the tunnel shell through air inlet end 41, and is blown out uniformly after passing through the outlet plate, and the silicon wafer in the tunnel is dried, and then is blown out from the air outlet 45.
[0024] The utility model discloses the beneficial aspect, this technical scheme is through the hot air unit that sets up staggered between each other, thereby improves the hot air drying efficiency in the tunnel of drying furnace, and both sides can carry out drying, increases the uniformity of hot air blowing, thereby guarantees the drying efficiency of silicon wafer, to this improves the conversion efficiency, reduces the bad rate.
[0025] The above, only for the preferred specific implementation mode of the utility model, but the protection scope of the utility model does not limit to this, any skilled in the art technical personnel in the utility model discloses the technical range, according to the utility model technical scheme and the utility model concept of the utility model, carries out equivalent replacement or changes, all should cover in the protection scope of the utility model.
Claims
1. A uniform heating type silicon wafer drying furnace structure comprising a drying furnace tunnel provided on a device support, a conveying mechanism provided in the drying furnace tunnel and on the device support, and a plurality of groups of hot air units provided on the drying furnace tunnel and used to dry the inside of the tunnel, characterized in that: The drying tunnel comprises several tunnel shells arranged on the equipment support and spliced together, an air outlet plate arranged inside the tunnel shell, and a shell mounting plate arranged outside the tunnel shell and matched with a hot air unit, both sides of each group of tunnel shells are provided with a hot air unit, and the hot air units on the two sides are staggered left and right, the hot air unit comprises several groups of air inlet ends arranged on the shell mounting plate on one side and uniformly distributed at the middle positions around the shell mounting plate, an air inlet pipe in communication with the air inlet ends, a heating device arranged in the middle of the air inlet pipe, a fan connected to the end of the air inlet pipe, and an air outlet arranged on the shell mounting plate on the other side. 2. The uniform heating type silicon wafer drying furnace structure according to claim 1, wherein: A plurality of air outlet holes are uniformly arranged on the air outlet plate.
3. The uniform heating type silicon wafer oven structure according to claim 1, wherein: There are four groups of air inlet ends arranged on the shell mounting plate.
4. The uniform heating type silicon wafer oven structure according to claim 1, wherein: The tunnel shell is a hollow mechanism.