Air inlet system and semiconductor process equipment

Abstract

The utility model discloses an air inlet system and semiconductor processing equipment, and belongs to the technical field of semiconductor processing. The gas inlet system comprises a first gas inlet device and a second gas inlet device, the first gas inlet device comprises a plurality of first gas inlet pipelines, the first end of each first gas inlet pipeline is used for being communicated with a gas source, and the second end of each first gas inlet pipeline is used for being communicated with a process chamber of the semiconductor process equipment; the second air inlet device comprises a second air inlet pipeline, the first end of the second air inlet pipeline is used for being communicated with the air source, and the second end of the second air inlet pipeline is communicated with at least one of the first air inlet pipelines in an on-off mode. And the gas source can be selectively communicated with at least one of the first gas inlet pipelines through the second gas inlet pipeline. According to the scheme, the problem that an air inlet system involved in the related technology is prone to affecting the substrate machining effect can be solved.

Description

Technical Field

[0001] This application belongs to the field of semiconductor processing technology, specifically relating to an air intake system and semiconductor process equipment. Background Technology

[0002] In semiconductor process equipment, the required reactive gases are typically introduced into the process chamber of the semiconductor process equipment through an air intake system in order to grow a silicon thin film on the substrate in the process chamber. Specifically, the reactive gases are controlled to flow through the heated substrate, and the reactive gases undergo a chemical reaction on the substrate surface to generate silicon, thereby forming a silicon thin film on the substrate surface.

[0003] To ensure a more uniform rate and concentration of reactant gases delivered to various parts of the substrate surface by the gas intake system, the system employs multiple intake pipes to deliver reactant gases and other dopant gases to different areas of the substrate. To guarantee uniformity in film thickness and resistivity on the substrate surface, this is typically achieved by adjusting the temperature field. For example, if a certain region of the substrate experiences a lower temperature, the film thickness in that region may be thinner, leading to uneven film thickness across the substrate surface. In such cases, adjusting the temperature in that region can facilitate the chemical reaction of the reactant gases in that area of ​​the substrate, thereby increasing the film thickness.

[0004] However, due to the complexity and numerous factors affecting the temperature field, which are highly interfering, adjusting the temperature of a certain area may cause changes in other parameters of the film, such as the resistivity of the film. In other words, this adjustment method can easily affect the final processing effect on the substrate.

[0005] In summary, the air intake system involved in the relevant technologies has the problem of easily affecting the processing effect on the substrate. Utility Model Content

[0006] This application discloses an air intake system and semiconductor process equipment to solve the problem that the air intake system involved in the related technology can easily affect the processing effect on the substrate.

[0007] To solve the above-mentioned technical problems, this application adopts the following technical solution:

[0008] An intake system for semiconductor process equipment, the intake system comprising a first intake device and a second intake device.

[0009] The first air intake device includes a plurality of first air intake pipes, the first end of each first air intake pipe is used to connect to an air source, and the second end of each first air intake pipe is used to connect to the process chamber of the semiconductor process equipment.

[0010] The second air intake device includes a second air intake pipe, a first end of which is connected to the air source, and a second end of which is connectable and disconnectable to at least one of the first air intake pipes, so that the air source can selectively connect to at least one of the first air intake pipes through the second air intake pipe.

[0011] A semiconductor process apparatus includes a process chamber and the aforementioned air intake system, wherein the air intake system is in / out of communication with the process chamber.

[0012] The technical solution adopted in this application can achieve the following beneficial effects:

[0013] In this application, the first air intake device includes multiple first air intake pipes, and the first end of each first air intake pipe is used to connect to a gas source, and the second end of each first air intake pipe is used to connect to the process chamber of the semiconductor process equipment. That is, each first air intake pipe is arranged sequentially in the process chamber along the circumference of the process chamber, so that each first air intake pipe faces different areas on the surface of the substrate in the process chamber. The gas provided by the gas source can enter the process chamber through each first air intake pipe to undergo a chemical reaction on the surface of the substrate in the process chamber to generate a film layer.

[0014] Meanwhile, since the first end of the second air intake pipe of the second air intake device is used to connect to a gas source, and the second end of the second air intake pipe can be switched on and off connected to at least one of the first air intake pipes, the gas source can selectively connect to at least one of the first air intake pipes through the second air intake pipe. That is, the gas supplied by the gas source can also selectively enter at least one of the first air intake pipes through the second air intake pipe to adjust parameters such as film thickness and resistivity in at least one of different regions of the substrate. This achieves the function of individually adjusting a certain region of the substrate. In other words, this application, through the additional second air intake device, can independently control the parameters of a certain region of the substrate to ensure better uniformity throughout the substrate. This application does not use a method of changing the temperature field for adjustment, which is better for the substrate processing effect. Furthermore, the first air intake device and the second air intake device do not affect each other; that is, the process of forming a film layer on the substrate surface and the process of individually adjusting a certain region of the substrate do not affect each other. Therefore, the air intake system disclosed in this application can solve the problem that air intake systems in related technologies easily affect the processing effect on the substrate. Attached Figure Description

[0015] Figure 1 This is a schematic diagram of the intake system disclosed in the embodiments of this application;

[0016] Figure 2 This is a schematic diagram of the structure of the shut-off valve assembly disclosed in the embodiments of this application;

[0017] Figure 3 This is a cross-sectional view of the shut-off valve assembly disclosed in an embodiment of this application.

[0018] Explanation of reference numerals in the attached figures:

[0019] 100 - First intake pipe;

[0020] 200 - Process Chamber;

[0021] 300 - Second intake pipe;

[0022] 400 - First gas mixing pipeline, 410 - First gas outlet, 420 - First gas inlet, 430 - First mixing trunk line, 440 - First branch line;

[0023] 500 - Second gas mixing pipeline, 510 - Second gas outlet, 520 - Second gas inlet, 530 - Second mixing trunk line, 540 - Second branch line;

[0024] 610 - First exhaust pipe, 620 - Second exhaust pipe;

[0025] 700 - Shut-off valve assembly, 710 - Valve body, 711 - Inlet, 712 - First outlet, 713 - Second outlet, 714 - First channel, 715 - Second channel, 720 - First shut-off valve, 730 - Second shut-off valve;

[0026] 810 - Pressure controller, 820 - Third shut-off valve, 830 - First flow regulating valve, 840 - Fourth shut-off valve, 850 - Fifth shut-off valve, 860 - Second flow regulating valve;

[0027] 910 - First gas, 920 - Second gas, 930 - Third gas. Detailed Implementation

[0028] To make the objectives, technical solutions, and advantages of this application clearer, the technical solutions in the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, not all embodiments. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0029] The intake system disclosed in this application will be described in detail below with reference to the accompanying drawings, through specific embodiments and application scenarios.

[0030] Please refer to Figures 1-3 This application discloses an air intake system, which includes a first air intake device and a second air intake device.

[0031] The gas intake system disclosed in this application is used in semiconductor process equipment, and the gas intake system is used to provide the necessary gas to the semiconductor process equipment to ensure that the semiconductor process equipment can process substrates.

[0032] The first air intake device includes a plurality of first air intake pipes 100. The first end of each first air intake pipe 100 is used to connect to a gas source, which may be a gas storage device. The second end of each first air intake pipe 100 is used to connect to the process chamber 200 of the semiconductor process equipment. That is, each first air intake pipe 100 is used to connect the gas source and the process chamber 200. Each first air intake pipe 100 is arranged sequentially in the process chamber 200 along the circumference of the process chamber 200. The process chamber 200 contains a substrate to be processed, so that the second end of each first air intake pipe 100 faces different areas of the substrate, thereby achieving regional control and meeting the requirements of substrate processing uniformity.

[0033] Multiple gas sources can be used, each providing different gases. For example, a first gas source can provide a first gas 910, which can be SiHCl3. This first gas 910 is the main reactant gas and enters the process chamber 200 through each first inlet pipe 100 to undergo a chemical reaction on the substrate surface to generate elemental silicon, thus forming a silicon thin film layer on the substrate surface. A second gas source can provide a second gas 920, which can be a doping reaction gas and can adjust the doping concentration or resistivity of the aforementioned film layer. A third gas source can provide a third gas 930, which can be hydrogen. This third gas 930 can be used as a carrier gas and can adjust the film thickness of the aforementioned film layer. Of course, each gas source can also provide other gases required for processing the substrate. That is, this application adopts a multi-gas source selection mode to provide multi-directional adjustable functions for the substrate.

[0034] The second air intake device includes a second air intake pipe 300. The first end of the second air intake pipe 300 is connected to a gas source, and the second end of the second air intake pipe 300 is connectable to at least one of the first air intake pipes 100. This allows the gas source to selectively connect to at least one of the first air intake pipes 100 through the second air intake pipe 300. That is, the gas supplied by the gas source can directly enter the process chamber 200 through the first air intake pipe 100, or it can enter the process chamber 200 through the second air intake pipe 300, or a portion can directly enter the process chamber 200 through the first air intake pipe 100, and another portion can enter the process chamber 200 through the second air intake pipe 300, so as to form a film layer on at least one of the regions of the substrate, or adjust the resistivity or film thickness of the film layer in at least one of the regions of the substrate.

[0035] Therefore, this application can independently control the film thickness or resistivity of a certain area of ​​the substrate, so as to make the film thickness uniformity or resistivity uniformity better in all parts of the substrate, thereby improving the substrate production yield.

[0036] In this application, the first air intake device includes a plurality of first air intake pipes 100, and the first end of each first air intake pipe 100 is used to connect to a gas source, and the second end of each first air intake pipe 100 is used to connect to the process chamber 200 of the semiconductor process equipment. That is, each first air intake pipe 100 is arranged sequentially in the process chamber 200 along the circumference of the process chamber 200, so that each first air intake pipe 100 faces a different area on the surface of the substrate inside the process chamber 200. The gas provided by the gas source can enter the process chamber 200 through each first air intake pipe 100 to undergo a chemical reaction on the surface of the substrate inside the process chamber 200 to generate a film layer.

[0037] Meanwhile, since the first end of the second air intake pipe 300 of the second air intake device is used to connect to the air source, the second end of the second air intake pipe 300 can be switched on and off connected to at least one of the first air intake pipes 100, so that the air source can selectively connect to at least one of the first air intake pipes 100 through the second air intake pipe 300. That is, the gas provided by the air source can also selectively enter at least one of the first air intake pipes 100 through the second air intake pipe 300 to adjust the film thickness, resistivity and other parameters of at least one of the different regions of the substrate, thereby realizing the function of individual adjustment of a certain region of the substrate. That is, this application can independently control the parameters of a certain region of the substrate by adding an additional second air intake device, so that the uniformity of the substrate is better. That is, this application does not use the method of changing the temperature field for adjustment, which has a better processing effect on the substrate. At the same time, the first air intake device and the second air intake device do not affect each other, that is, the process of generating a film on the surface of the substrate and the process of individually adjusting a certain region of the substrate do not affect each other. Therefore, the air intake system disclosed in this application can solve the problem that the air intake system involved in the related technology can easily affect the processing effect on the substrate.

[0038] Alternatively, the number of second air intake pipes 300 may be only one.

[0039] In another embodiment, there are at least two second air inlet pipes 300, and the number of first air inlet pipes 100 is the same as the number of second air inlet pipes 300. The first end of each second air inlet pipe 300 is used to connect to a gas source, and the second end of each second air inlet pipe 300 is connected to each first air inlet pipe 100 in a one-to-one correspondence and can be switched on and off. That is, the gas provided by the gas source can enter multiple different second air inlet pipes 300, thereby entering multiple different first air inlet pipes 100, and then acting on multiple different areas of the substrate. At this time, the gas source can provide different gases to enter the process chamber 200 through different second air inlet pipes 300 and different first air inlet pipes 100, thereby acting on different areas of the substrate. Alternatively, the gas source can provide the same gas to enter the process chamber 200 through different second air inlet pipes 300 and different first air inlet pipes 100, thereby acting on different areas of the substrate, so as to adjust more areas of the substrate and improve the processing effect of the substrate.

[0040] Optionally, the first air intake device may further include a first gas mixing pipeline 400, which has a first air outlet 410 and at least two first air inlets 420. Each first air inlet 420 is connected to a different air source in a way that can be switched on and off. Specifically, the first gas mixing pipeline 400 includes a first mixing trunk line 430 and at least two first branches 440. One end of the first mixing trunk line 430 is provided with the first air outlet 410, and the other end of the first mixing trunk line 430 is connected to one end of each of the first branches 440. The other end of each of the first branches 440 is provided with a first air inlet 420, that is, each first air inlet 420 can be provided on a different first branch 440, and different first branches 440 are connected to different air sources through corresponding... The first air inlet 420 is connected, and each first branch 440 can be equipped with a fifth shut-off valve 850 and a second flow regulating valve 860. The second flow regulating valve 860 is used to regulate the flow rate of gas in the first branch 440. The fifth shut-off valve 850 can close or open the first branch 440 so that each first branch 440 can be connected to different gas sources through the fifth shut-off valve 850. The first air outlet 410 is selectively connected to the first end of each first air inlet pipe 100 through the fourth shut-off valve 840. That is, the fourth shut-off valve 840 can selectively connect the first air outlet 410 to each first air inlet pipe 100 so that the first air outlet 410 can be selectively connected to different first air inlet pipes 100 through the fourth shut-off valve 840. Therefore, this application allows different gases from different gas sources to be mixed in the first gas mixing pipeline 400 and then enter each first gas inlet pipeline 100, thereby acting on different areas of the substrate to simultaneously adjust the thickness and resistivity of the substrate film, i.e., to adjust the substrate in multiple directions.

[0041] And / or, optionally, the second air intake device may further include a second gas mixing line 500, the second gas mixing line 500 having a second air outlet 510 and at least two second air inlets 520, each second air inlet 520 being used to be connected to different air sources in a way that can be switched on and off via a sixth shut-off valve. Specifically, each second air inlet 520 corresponds one-to-one with each first air inlet 420, and is connected to each other in a way that can be switched on and off via a sixth shut-off valve, that is, the sixth shut-off valve can selectively connect each second air inlet 520 to... Different first air inlets 420 are provided so that each second air inlet 520 can be connected to a different first air inlet 420 via a sixth shut-off valve. The second air outlet 510 is selectively connected to the first end of the second air inlet pipe 300 via a first shut-off valve 720 (described later). That is, the first shut-off valve 720 selectively connects the second air outlet 510 to the second air inlet pipe 300, allowing the second air outlet 510 to be selectively connected to the second air inlet pipe 300 via the first shut-off valve 720. Therefore, different gases from different gas sources can enter the second gas mixing pipe 500 for mixing. The mixed gas can be selectively connected to at least one of the first air inlet pipes 100 via the second air inlet pipe 300. This means the mixed gas can act on different areas of the substrate. Specifically, the mixed gas can act on a specific area of ​​the substrate to allow for multi-directional adjustment of that area, thereby improving the processing effect on the substrate. Meanwhile, since the second gas mixing pipeline 500 can also send the mixed gas into the process chamber 200, this arrangement can replace the mixing function of the first gas mixing pipeline 400, which gives this application more usage options. Of course, the second air intake device may not include the second gas mixing pipeline 500. In this case, the first end of the second air intake pipe 300 can be connected to at least one of the first air intake ends 420, specifically, it can be connected to at least one of the first branch lines 440.

[0042] Optionally, the intake system may only include the first exhaust pipe 610, which is configurably connected to the first mixing trunk line 430. Specifically, the first mixing trunk line 430 can be connected to the first end of each first intake pipe 100 through the first outlet end 410. The first mixing trunk line 430 is the main pipe in the first gas mixing pipeline 400 used for mixing gases. That is, the first mixing trunk line 430 can allow different gases provided by different gas sources to be mixed by themselves and then enter each first intake pipe 100 through the first outlet end 410. Since the first exhaust pipe 610 and the first mixing trunk line 430 can be connected in a way that allows for switching, when the substrate processing begins, that is, when the gas source provides the gas required for substrate processing, the first exhaust pipe 610 can be opened first to discharge the gas. After the gas flow rate and velocity stabilize, the first exhaust pipe 610 can be closed so that the gas can enter each of the first intake pipes 100 through the first mixing trunk line 430. This ensures that the gas entering the process chamber 200 through the first intake device is relatively stable, thereby ensuring the processing effect on the substrate.

[0043] In another embodiment, the air intake system may further include a second exhaust pipe 620, which is operably connected to the second air intake pipe 300. When the gas source supplies gas to the process chamber 200 through the second air intake pipe 300, the second exhaust pipe 620 can be opened first to discharge the gas. After the gas flow rate and velocity stabilize, the second exhaust pipe 620 is closed, allowing the gas to enter at least one of the first air intake pipes 100 through the second air intake pipe 300. This ensures that the gas entering the process chamber 200 through the second air intake device is relatively stable, thereby ensuring the processing effect on the substrate. Therefore, both the first exhaust pipe 610 and the second exhaust pipe 620 can ensure that the gas entering the process chamber 200 is relatively stable, further ensuring the processing effect on the substrate.

[0044] Optionally, the intake system may include a first shut-off valve 720 and a second shut-off valve 730. The first shut-off valve 720 may be provided on both the first mixing trunk line 430 and the second intake pipe 300. The first shut-off valve 720 on the first mixing trunk line 430 can open or close the first mixing trunk line 430. The first shut-off valve 720 on the second intake pipe 300 can open or close the second intake pipe 300. The second shut-off valve 730 may be provided on both the first exhaust pipe line 610 and the second exhaust pipe line 620. The second shut-off valve 730 on the first exhaust pipe line 610 can open or close the first exhaust pipe line 610. The second shut-off valve 730 on the second exhaust pipe line 620 can open or close the second exhaust pipe line 620.

[0045] In another embodiment, please refer to Figure 2 and Figure 3The intake system may further include a shut-off valve assembly 700. At least one of the first mixing trunk line 430 and the second intake pipe 300 is provided with the shut-off valve assembly 700. The shut-off valve assembly 700 includes a valve body 710, a first shut-off valve 720 and a second shut-off valve 730 as described above. The valve body 710 has an inlet 711, a first outlet 712, a second outlet 713, a first channel 714, and a second channel 715. The inlet 711 is connected to the first outlet 712 through the first channel 714, and the inlet 711 is connected to the second outlet 713 through the second channel 715. The first shut-off valve 720 is located in the first channel 714, meaning the first shut-off valve 720 can be opened or closed. The first channel 714 is closed, and the inlet 711 and the first outlet 712 are respectively connected to the first mixing trunk 430 or the second intake pipe 300. That is, the first shut-off valve 720 opens or closes the first mixing trunk 430 or the second intake pipe 300 by opening or closing the first channel 714. The second shut-off valve 730 is located in the second channel 715, that is, the second shut-off valve 730 can open or close the second channel 715. The second outlet 713 is connected to the first exhaust pipe 610 or the second exhaust pipe 620. That is, the second shut-off valve 730 opens or closes the first exhaust pipe 610 or the second exhaust pipe 620 by opening or closing the second channel 715.

[0046] In this embodiment, inlet 711 is connected to first outlet 712 via first channel 714, and inlet 711 is connected to second outlet 713 via second channel 715. Specifically, first channel 714 and second channel 715 intersect. Gas enters valve body 710 through inlet 711 and separates at the intersection of first channel 714 and second channel 715, finally flowing to first shut-off valve 720 and second shut-off valve 730 respectively. Since the intersection of first channel 714 and second channel 715 is far from the first shut-off valve... The distance between valves 720 and 730 is relatively short, approximately 25mm. This results in less residual gas in the first channel 714 between the intersection of valve 720 and the first shut-off valve 720 when the first shut-off valve 720 is closed and the second shut-off valve 730 is opened. In other words, this arrangement can effectively reduce the residual gas at the front end of the first shut-off valve 720, thereby improving the stability of gas entering the process chamber 200 when switching between the first shut-off valve 720 and the second shut-off valve 730, i.e., when the first shut-off valve 720 is opened and the second shut-off valve 730 is closed.

[0047] Meanwhile, since the first shut-off valve 720 and the second shut-off valve 730 are concentrated on the valve body 710, the structure of the entire shut-off valve assembly 700 is more concentrated, thereby reducing the space occupied by the shut-off valve assembly 700 as a whole.

[0048] Optionally, since the valve body 710 is relatively small, both the first channel 714 and the second channel 715 can be bent channels. This arrangement facilitates the setting of the first channel 714 and the second channel 715 within the valve body 710.

[0049] Optionally, the axis of inlet 711 and the axis of first outlet 712 are collinear, and the second outlet 713, the first shut-off valve 720 and the second shut-off valve 730 can be located on different sides of inlet 711 and first outlet 712.

[0050] In another embodiment, the second outlet 713, the first shut-off valve 720, and the second shut-off valve 730 can all be located on the same side of the inlet 711 and the first outlet 712, so that the first shut-off valve 720 and the second shut-off valve 730 can be more concentrated on the valve body 710, thereby further reducing the space occupied by the shut-off valve assembly 700 as a whole.

[0051] Optionally, the first shut-off valve 720 and the second shut-off valve 730 may be located on the same side of the second outlet 713.

[0052] In another embodiment, the first shut-off valve 720 and the second shut-off valve 730 are located on opposite sides of the second outlet 713, that is, the first shut-off valve 720 and the second shut-off valve 730 are located on different sides of the second outlet 713, so as to avoid the installation position of the first shut-off valve 720 on the valve body 710 and the installation position of the second shut-off valve 730 on the valve body 710 affecting each other.

[0053] Optionally, the axis of the inlet 711 and the axis of the first outlet 712 are both the first axis, and the first shut-off valve 720 and the second shut-off valve 730 are both inclined relative to the first axis. That is, the first shut-off valve 720 and the second shut-off valve 730 are both inclined on the valve body 710, and the inclination direction of the first shut-off valve 720 is the same as the inclination direction of the second shut-off valve 730.

[0054] In another embodiment, the tilt direction of the first shut-off valve 720 is opposite to that of the second shut-off valve 730, so that both the first shut-off valve 720 and the second shut-off valve 730 are tilted away from the second outlet 713. This is to avoid the first shut-off valve 720 and the second shut-off valve 730 affecting the installation position of the first exhaust pipe 610 or the second exhaust pipe 620 connected to the second outlet 713 on the valve body 710. That is, it avoids the influence between the first shut-off valve 720, the second shut-off valve 730 and the first exhaust pipe 610, or between the first shut-off valve 720, the second shut-off valve 730 and the second exhaust pipe 620.

[0055] Optionally, to further ensure the stability of the gas entering the process chamber 200, a pressure controller 810 is provided on at least one of the first exhaust pipe 610 and the second exhaust pipe 620. The pressure controller 810 can be located near the exhaust end of the first exhaust pipe 610 or the second exhaust pipe 620, that is, on the side of the second shut-off valve 730 mentioned above away from the gas source. The pressure controller 810 can control the pressure of at least one of the first exhaust pipe 610 and the second exhaust pipe 620, thereby controlling the pressure of the first mixing trunk line 430 or the second intake pipe 300. Optionally, the pressure controller 810 can be a back pressure controller.

[0056] Specifically, when the second shut-off valve 730 is open and the first shut-off valve 720 is closed, the pressure controller 810 can control the pressure at the first shut-off valve 720, that is, control the pressure between the second shut-off valve 730 and the first shut-off valve 720. When the first shut-off valve 720 is open and the second shut-off valve 730 is closed, the pressure controller 810 can minimize the pressure fluctuation at the first shut-off valve 720, thereby stabilizing the pressure of the gas entering the first mixing trunk line 430 or the second air inlet pipe 300, thus ensuring the processing effect on the substrate. Of course, neither the first exhaust pipe 610 nor the second exhaust pipe 620 may be equipped with a pressure controller 810.

[0057] Optionally, the second gas mixing pipeline 500 includes a second mixing trunk line 530 and at least two second branches 540. One end of the second mixing trunk line 530 is connected to the first end of the second intake pipeline 300, and the other end of the second mixing trunk line 530 is connected to one end of each of the second branches 540. The other end of each of the second branches 540 is respectively connected to each of the first intake ends 420, so that different gases provided by different gas sources enter different second branches 540 and are mixed in the second mixing trunk line 530. The second mixing trunk line 530 is mainly used for mixing gases, and it can mix different gases provided by different gas sources. The mixed gas can enter the second inlet pipe 300. Each second branch line 540 can be equipped with a third shut-off valve 820, which can open or close the second branch line 540. That is, each second branch line 540 can selectively supply gas, so that one or more gases can enter the second mixing trunk line 530, thereby achieving diversified control of the chemical reaction in the process chamber 200. Of course, each second branch line 540 may not be equipped with a third shut-off valve 820, so that multiple gases can enter the second mixing trunk line 530 simultaneously.

[0058] Optionally, a first flow regulating valve 830 may be provided on the second air inlet pipe 300. The first flow regulating valve 830 can control the gas flow rate from the second air inlet pipe 300 to at least one of the first air inlet pipes 100 to ensure regulation accuracy, thereby facilitating control of the substrate processing effect. Of course, the second air inlet pipe 300 may not be provided with a first flow regulating valve 830.

[0059] Optionally, when there are multiple second air inlet pipes 300, there can also be multiple first flow regulating valves 830. That is, each second air inlet pipe 300 is provided with a first flow regulating valve 830. Multiple first flow regulating valves 830 can realize the function of regulating the gas flow rate towards different areas of the substrate, thereby achieving the purpose of regional regulation of concentration distribution.

[0060] Optionally, this application also discloses a semiconductor process apparatus, including a process chamber 200 and the aforementioned air intake system, wherein the air intake system is configurably connected to the process chamber 200.

[0061] The above embodiments of this application focus on describing the differences between the various embodiments. As long as the different optimization features between the various embodiments are not contradictory, they can be combined to form a better embodiment. For the sake of brevity, they will not be described in detail here.

[0062] The above description is merely an embodiment of this application and is not intended to limit the scope of this application. Various modifications and variations can be made to this application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the scope of the claims of this application.

Claims

1. An air intake system for semiconductor process equipment, characterized in that, The air intake system includes a first air intake device and a second air intake device. The first air intake device includes a plurality of first air intake pipes (100), the first end of each first air intake pipe (100) is used to connect to an air source, and the second end of each first air intake pipe (100) is used to connect to the process chamber (200) of the semiconductor process equipment. The second air intake device includes a second air intake pipe (300), a first end of which is connected to the air source, and a second end of which is connectable and disconnectable to at least one of the first air intake pipes (100), so that the air source can be selectively connected to at least one of the first air intake pipes (100) through the second air intake pipe (300).

2. The intake system according to claim 1, characterized in that, The number of the second air intake pipes (300) is at least two, and the number of the first air intake pipes (100) is the same as the number of the second air intake pipes (300). The first end of each second air intake pipe (300) is used to connect to the air source, and the second end of each second air intake pipe (300) is connected to each first air intake pipe (100) in a one-to-one correspondence and can be switched on and off.

3. The intake system according to claim 1, characterized in that, The first air intake device further includes a first gas mixing conduit (400), which has a first air outlet (410) and at least two first air inlets (420), each of the first air inlets (420) being configured to be connected to different air sources in a manner that can be switched on or off. The first air outlet (410) is selectively connected to a first end of each of the first air intake pipes (100); and / or, The second air intake device further includes a second gas mixing pipeline (500), which has a second air outlet (510) and at least two second air inlets (520), each of the second air inlets (520) being used to be connected to different air sources in a way that can be switched on and off, and the second air outlet (510) being selectively connected to the first end of the second air intake pipe (300).

4. The intake system according to claim 3, characterized in that, The first gas mixing pipeline (400) includes a first mixing trunk line (430) and at least two first branches (440). One end of the first mixing trunk line (430) is provided with a first gas outlet (410), and the other end of the first mixing trunk line (430) is connected to one end of each of the first branches (440). The other end of each of the first branches (440) is provided with a first gas inlet (420). The intake system also includes a first exhaust pipe (610) and a second exhaust pipe (620), wherein the first exhaust pipe (610) is connected to the first mixing trunk line (430) in a way that can be switched on or off, and the second exhaust pipe (620) is connected to the second intake pipe (300) in a way that can be switched on or off.

5. The intake system according to claim 4, characterized in that, The intake system further includes a shut-off valve assembly (700), which is provided on at least one of the first mixing trunk line (430) and the second intake duct (300). The shut-off valve assembly (700) includes a valve body (710), a first shut-off valve (720), and a second shut-off valve (730). The valve body (710) is provided with an inlet (711), a first outlet (712), a second outlet (713), a first channel (714), and a second channel (715). The inlet (711) is connected to the first outlet (712) through the first channel (714), and the inlet (711) is connected to the second outlet (713) through the second channel (715). The first shut-off valve (720) is located in the first channel (714), and the second shut-off valve (730) is located in the second channel (715). The inlet (711) and the first outlet (712) are respectively connected to the first mixing trunk line (430) or the second intake pipe (300), and the second outlet (713) is connected to the first exhaust pipe (610) or the second exhaust pipe (620).

6. The intake system according to claim 5, characterized in that, The axis of the inlet (711) and the axis of the first outlet (712) are collinear. The second outlet (713), the first shut-off valve (720) and the second shut-off valve (730) are all located on the same side of the inlet (711) and the first outlet (712), and the first shut-off valve (720) and the second shut-off valve (730) are located on both sides of the second outlet (713).

7. The intake system according to claim 6, characterized in that, The axis of the inlet (711) and the axis of the first outlet (712) are both the first axis. The first shut-off valve (720) and the second shut-off valve (730) are both inclined relative to the first axis, and the inclination direction of the first shut-off valve (720) is opposite to the inclination direction of the second shut-off valve (730).

8. The intake system according to claim 4, characterized in that, A pressure controller (810) is provided on at least one of the first exhaust pipe (610) and the second exhaust pipe (620).

9. The intake system according to claim 3, characterized in that, The second gas mixing pipeline (500) includes a second mixing trunk line (530) and at least two second branches (540). One end of the second mixing trunk line (530) is connected to the first end of the second air inlet pipeline (300), and the other end of the second mixing trunk line (530) is connected to one end of each of the second branches (540). The other end of each of the second branches (540) is connected to each of the first air inlet ends (420) in a corresponding manner. Each of the second branches (540) is provided with a third shut-off valve (820).

10. The intake system according to claim 1, characterized in that, The second air intake pipe (300) is equipped with a first flow regulating valve (830).

11. A semiconductor process apparatus, characterized in that, It includes a process chamber (200) and an air intake system according to any one of claims 1-10, wherein the air intake system is in a switchable connection with the process chamber (200).

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