Power module and electronic device

Abstract

The utility model discloses a power module and an electronic device. The power module comprises an RC-IGBT; the driving integrated circuit is electrically connected with the RC-IGBT; the heat dissipation substrate is provided with a first surface and a second surface which are oppositely arranged, and the RC-IGBT is arranged on the first surface of the heat dissipation substrate; the RC-IGBT, the heat dissipation substrate and the driving integrated circuit are packaged through the packaging resin, at least part of the second face of the heat dissipation substrate is exposed out of the packaging resin, and the aspect ratio of the RC-IGBT is smaller than or equal to 1.48; the length of the packaging resin in the length direction is less than or equal to 60mm; the width of the packaging resin in the width direction is smaller than or equal to 33 mm; the rated current of the RC-IGBT is defined as I, and I meets the relational expression that I is larger than or equal to 70A and smaller than or equal to 80A.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and more specifically to a power module and electronic device. Background Technology

[0002] Power modules used to drive motors consist of power chips and driver integrated circuits. Compared with traditional discrete devices, they have advantages such as high integration and high reliability, and are widely used. The trend of miniaturization of power modules requires smaller product size, while the increase in current required by power modules necessitates larger chip size, which may lead to a corresponding increase in product size. Furthermore, the increase in temperature under high current conditions raises reliability issues. Therefore, how to make power modules simultaneously achieve miniaturization, high current capacity, and high reliability has become an urgent problem to be solved. Utility Model Content

[0003] The utility model description section introduces a series of simplified concepts, which will be further explained in detail in the detailed description section. This utility model description section is not intended to limit the key features and essential technical features of the claimed technical solution, nor is it intended to determine the scope of protection of the claimed technical solution.

[0004] To at least partially solve the above problems, according to a first aspect of this application, a power module is provided, comprising:

[0005] RC-IGBT;

[0006] The driver integrated circuit and the RC-IGBT are electrically connected;

[0007] The heat dissipation substrate (30) has a first side and a second side disposed opposite to each other, wherein the RC-IGBT is disposed on the first side of the heat dissipation substrate (30);

[0008] An encapsulating resin is used to encapsulate the RC-IGBT, the heat sink substrate (30), and the driver integrated circuit, wherein at least a portion of the second side of the heat sink substrate (30) is exposed from the encapsulating resin.

[0009] The aspect ratio of RC-IGBT is less than or equal to 1.48;

[0010] The length of the encapsulating resin in the longitudinal direction is less than or equal to 60 mm;

[0011] The width of the encapsulating resin in the width direction is less than or equal to 33 mm; and

[0012] The rated current of the RC-IGBT is defined as I, and I satisfies the relationship: 70A≤I≤80A.

[0013] The above technical solution has the following advantages and beneficial effects: According to the power module in the embodiments of this application, by using RC-IGBT as a semiconductor switching element, and by encapsulating a large current specification (70A≤I≤80A) RC-IGBT in a small package resin, and by reducing the aspect ratio of the RC-IGBT, the power module is miniaturized while improving the stress concentration and uneven high-temperature thermal expansion of the large current specification (70A≤I≤80A) RC-IGBT, significantly reducing the failure probability of the RC-IGBT chip, thereby improving the reliability of the power module.

[0014] For example, the aspect ratio of RC-IGBT is also greater than 1.

[0015] The above technical solution has the following advantages and beneficial effects: According to the current circuit pattern design on the heat dissipation substrate, the lateral dimension of the power side pad used to connect with the RC-IGBT is much smaller than the vertical dimension. Correspondingly, the lateral variable dimension of the RC-IGBT is much smaller than the vertical variable dimension of the chip. Therefore, the large width of the RC-IGBT is not conducive to the miniaturization of semiconductor devices. Thus, the aspect ratio of the RC-IGBT is also greater than 1, that is, the vertical dimension is relatively large, which can be more conducive to the miniaturization of semiconductor devices.

[0016] For example, the length of the encapsulating resin in the longitudinal direction is also greater than or equal to 50 mm; and

[0017] The width of the encapsulating resin in the width direction is also greater than or equal to 29 mm.

[0018] The above technical solution has the following advantages and beneficial effects: by keeping the size of the encapsulation resin within the above range, it is beneficial to miniaturize the product while meeting the current specification requirements of 70A≤I≤80A as much as possible. This allows for the encapsulation of a larger current specification in a relatively small encapsulation resin, suppressing the problem of higher chip temperature and greater thermal stress caused by the small size of the encapsulation resin, thereby reducing the probability of chip failure.

[0019] For example, the area of ​​the heat dissipation substrate is set to S, where S satisfies the relationship: 480mm2≤S≤820mm2.

[0020] The above technical solution has the following advantages and benefits: it can both meet the space requirements of the encapsulation resin for the drive-side frame or drive-side PCB board (printed circuit board) used to mount the drive integrated circuit, and meet the space requirements of the heat dissipation substrate used for heat dissipation of power chips (such as IGBTs and FRDs, or RC-IGBTs).

[0021] For example, the width of the RC-IGBT is greater than or equal to 3 mm and less than or equal to 6 mm.

[0022] The above technical solution has the following advantages and benefits: by setting it up in this way, the aspect ratio of the RC-IGBT will not be too large, thereby reducing the probability of chip failure, and without increasing the overall size of the product.

[0023] For example, the first side of the heat dissipation substrate has a power side pad, and the RC-IGBT is disposed on the power side pad.

[0024] The above technical solution has the following advantages and benefits: the power side pads on the first side of the heat dissipation substrate can be used to bring out the RC-IGBT for electrical connection with other components, and by directly setting the RC-IGBT on the power side pads, direct electrical connection of the RC-IGBT can be achieved, which optimizes the wiring of the power module and makes its structure simpler.

[0025] For example, the heat dissipation substrate includes:

[0026] An insulating layer having a first surface and a second surface opposite to the first surface, wherein the insulating layer is at least one of an aluminum nitride ceramic layer or a silicon nitride ceramic layer;

[0027] A conductive layer is disposed at least on a first surface of the insulating layer, wherein the conductive layer comprises:

[0028] A first conductive layer is disposed on the first surface, or...

[0029] A first conductive layer and a second conductive layer are disposed on the first surface and the second conductive layer is disposed on the second surface.

[0030] Wherein, the surface of the first conductive layer away from the insulating layer constitutes at least a portion of the first surface of the heat dissipation substrate, and the first conductive layer includes the power side pad.

[0031] The above technical solution has the following advantages and beneficial effects: By using a ceramic material with a higher thermal conductivity than Al2O3, the heat dissipation of the heat dissipation substrate can be improved, thereby dissipating heat generated by components such as the RC-IGBT and conductive layer. This helps to reduce the temperature of the power module, thus suppressing heat accumulation during operation and ensuring safety. Furthermore, the insulating layer also serves as an insulator, preventing the conductive layer electrically connected to the RC-IGBT from connecting to the outside environment, thereby ensuring the normal operation of the power module and improving the electrical safety of the power module 100.

[0032] For example, there are multiple RC-IGBTs and multiple power-side pads. The RC-IGBTs are spaced apart in the length direction. The multiple RC-IGBTs include at least one high-voltage power-side RC-IGBT and at least one low-voltage power-side RC-IGBT. The high-voltage power-side RC-IGBT and the low-voltage power-side RC-IGBT are respectively disposed on different power-side pads.

[0033] The above technical solution has the following advantages and beneficial effects: by using at least one high-voltage power side

[0034] The RC-IGBT and at least one low-voltage power-side RC-IGBT are set on different power-side pads, which can better isolate different types of RC-IGBTs electrically, so that the required connection structure can be achieved through pins and connecting lines, which is beneficial to the normal operation of the power module.

[0035] For example, the number of low-voltage power-side RC-IGBTs is three, the number of high-voltage power-side RC-IGBTs is three, and the power-side pads include:

[0036] There are three low-voltage power side pads, which are spaced apart along the length.

[0037] The high-voltage power side pad consists of one pad, and three low-voltage power side pads are spaced apart along the length. The two sides of the encapsulation resin along the length are designated as the first side and the second side, respectively. The low-voltage power side pad is closer to the first side along the length, and the high-voltage power side pad is closer to the second side along the length. The three low-voltage power side RC-IGBTs are respectively disposed on the three low-voltage power side pads, and the three high-voltage power side RC-IGBTs are each disposed on one high-voltage power side pad. The three high-voltage power side RC-IGBTs are spaced apart along the length of the high-voltage power side pad.

[0038] The above technical solution has the following advantages and benefits: With this setting, the layout of the power module can be more reasonable, and the arrangement of the leads connected to the pads can be more concise and regular.

[0039] For example, it also includes:

[0040] A driver-side frame, partially encapsulated by the encapsulating resin, includes driver-side pads and driver-side pins. A driver integrated circuit is disposed on the driver-side pads and electrically connected to the driver-side pins. The heat dissipation substrate and the driver-side frame are spaced apart in the width direction.

[0041] The PCB board is encapsulated by the encapsulating resin and has a drive-side pad. The power module also includes a drive-side pin, which is electrically connected to the PCB board. The drive integrated circuit is disposed on the drive-side pad and electrically connected to the drive-side pin. The heat dissipation substrate and the PCB board are spaced apart in the width direction.

[0042] The above technical solution has the following advantages and beneficial effects: Using a driver-side frame to house the driver integrated circuit and integrate driver-side pins facilitates high integration, reduces the number of components, shrinks the overall size, and makes the power module structure more compact. It also enhances heat dissipation and improves the stability and reliability of the power module. Furthermore, the PCB board enables wiring and support for the driver integrated circuit, and its simple structure makes it more suitable for packaging.

[0043] For example, the drive-side pads include:

[0044] Low-voltage drive side pad (23), wherein there is one low-voltage drive side pad (23);

[0045] Three high-voltage drive-side pads (22) are provided, and the three high-voltage drive-side pads (22) and one low-voltage drive-side pad (23) are spaced apart along the length direction. The encapsulation resin (10) is positioned on two sides along the length direction, namely a first side (11) and a second side (12). The low-voltage drive-side pad (23) is closer to the first side (11) along the length direction, and the high-voltage drive-side pad (22) is closer to the second side (12) along the length direction. The drive integrated circuit includes one low-voltage drive integrated circuit (231) and three high-voltage drive integrated circuits (221). One low-voltage drive integrated circuit (231) is disposed on one low-voltage drive-side pad (23), and one high-voltage drive integrated circuit (221) is disposed on one high-voltage drive-side pad (22).

[0046] When there are multiple RC-IGBTs, and the multiple RC-IGBTs include multiple low-voltage power-side RC-IGBTs and multiple high-voltage power-side RC-IGBTs, one low-voltage drive integrated circuit (231) is electrically connected to multiple low-voltage power-side RC-IGBTs (331) respectively, and one high-voltage drive integrated circuit (221) is electrically connected to one high-voltage power-side RC-IGBT (321) respectively.

[0047] The above technical solution has the following advantages and benefits: In this way, the layout of the power module can be more reasonable, and the lead distribution between the driver integrated circuit and the RC-IGBT can be more balanced.

[0048] For example, it also includes three bootstrap chips (251), all three bootstrap chips (251) being disposed on the driver-side pin (24), wherein the driver-side pin (24) further includes:

[0049] Three floating power supply voltage positive terminal pins (241), each of the floating power supply voltage positive terminal pins (241) extends in the width direction and is spaced apart from a corresponding high voltage drive side pad (22) in the length direction. The floating power supply voltage positive terminal pins (241) have bootstrap chip pads (25), and three bootstrap chips (251) are respectively disposed on the bootstrap chip pads (25) of the three floating power supply voltage positive terminal pins (241).

[0050] Three floating power supply voltage negative terminal pins (242), each of the floating power supply voltage negative terminal pins (242) is arranged to extend in the length direction and is arranged in the width direction on the side of the floating power supply voltage positive terminal pin (241) away from the adjacent high voltage drive side pad (22), and each of the RC-IGBTs is electrically connected to its respective floating power supply voltage negative terminal pin (242).

[0051] Three chip power supply voltage pins (243) are provided, each of the chip power supply voltage pins (243) being spaced apart on the side of the high voltage drive side pad (22) away from the heat dissipation substrate (30) in the width direction. Each bootstrap chip (251) is electrically connected to one of the chip power supply voltage pins (243) adjacent to it, and each floating power supply voltage positive terminal pin (241) is electrically connected to one of the high voltage drive integrated circuits (221) adjacent to it.

[0052] The above technical solution has the following advantages and benefits: the bootstrap chip can play the role of power isolation, improve driving voltage and realize automatic gain control, and by setting the bootstrap chip on the driving side pin, the circuit layout and wiring can be optimized, which is conducive to the miniaturization of power modules.

[0053] For example, a bootstrap chip is integrated within each of the high-voltage drive integrated circuits, wherein the drive-side pin (24) further includes:

[0054] Three floating power supply voltage positive terminal pins (241), each of the floating power supply voltage positive terminal pins (241) extending in the width direction and spaced apart from a corresponding high voltage drive side pad in the length direction;

[0055] Three floating power supply voltage negative terminal pins (242), each of the RC-IGBTs is electrically connected to its corresponding floating power supply voltage negative terminal pin (242); three chip power supply voltage pins (243), each of the chip power supply voltage pins (243) is spaced apart on the side of the high voltage drive side pad (22) away from the heat dissipation substrate (30) in the width direction, each of the high voltage drive integrated circuits is electrically connected to its adjacent chip power supply voltage pin (243), and each floating power supply voltage positive terminal pin (241) is electrically connected to its adjacent high voltage drive integrated circuit (221).

[0056] The above technical solution has the following advantages and benefits: by integrating the bootstrap chip into the high-voltage drive integrated circuit, the circuit design can be simplified, the number of components and connections can be reduced, space can be saved, the complexity and failure rate of the power module can be reduced, and the miniaturization of the power module can be facilitated.

[0057] For example, it also includes:

[0058] A power-side pin (34) is partially encapsulated by the encapsulating resin (10) and located on the side of the heat sink substrate (30) away from the driver integrated circuit (20) along the width direction. The power-side pin (34) is electrically connected to the RC-IGBT. The first side of the heat sink substrate (30) also has a plurality of jumper areas, each of which is located on the side of the RC-IGBT to which it is electrically connected away from the driver integrated circuit along the width direction.

[0059] Each of the RC-IGBTs includes:

[0060] Gate pad (35), the gate pad (35) being electrically connected to the driver integrated circuit,

[0061] Emitter pad (36) is electrically connected to power side pin (34) via multiple pin electrical connection lines (262). Each pin electrical connection line (262) includes a first connection line (2621) and a second connection line (2622). The first connection line (2621) electrically connects the emitter pad (36) and the corresponding jumper area. The jumper area is electrically connected to the corresponding power side pin (34) via the second connection line.

[0062] The above technical solution has the following advantages and beneficial effects: such a setting can realize the electrical connection between the RC-IGBT and the corresponding pins, and by making the RC-IGBT form a suitable circuit structure, the normal function of the power module can be realized.

[0063] For example, the first connecting line (2621) and the second connecting line (2622) connecting the same jumper area form an included angle α that satisfies the relationship: 100°≤α≤165°.

[0064] The above technical solution has the following advantages and beneficial effects: by making the included angle α satisfy the above relationship, it is easier to wire the pin electrical connection wires, and it can also ensure the insulation distance between multiple pin electrical connection wires, avoiding short circuits caused by the pin electrical connection wires being too close, which could damage the device.

[0065] For example, the length of the pin electrical connection is L5, and L5 satisfies the relationship: 13mm≤L5≤24mm.

[0066] The above technical solution has the following advantages and benefits: By setting it up in this way, it can be ensured that the length of the pin electrical connection line meets the requirements for normal electrical connection between the emitter and power side pins of the RC-IGBT. At the same time, it can also suppress the problems of material waste, increased resistance and increased inductance caused by excessive length of the pin electrical connection line, thereby reducing the power consumption of the power module and improving the stability of the power module.

[0067] For example, the RC-IGBT includes a termination structure that employs a lateral doping structure.

[0068] The above technical solution has the following advantages and benefits: The RC-IGBT terminal structure adopts a lateral variable doping structure, which can further reduce the chip area of ​​the RC-IGBT compared with the field limiting ring or the field limiting ring plus field plate terminal structure, thus facilitating the miniaturization of the module.

[0069] For example, it also includes two support rods (38), which are respectively disposed adjacent to the first side (11) and the second side (12) and are both connected to the heat dissipation substrate (30). The support rods (38) are spaced apart from the adjacent power side pads (31). One of the low-voltage power side pads (33) adjacent to the first side (11) has a first long side extending along the width direction. The first long side is disposed between the drive side frame and the support rods (38). If the dimension of the first long side along the width direction is set as A, then 7mm≤A≤8.3mm.

[0070] The above technical solution has the following advantages and benefits: by making 7mm≤A≤8.3mm, the size limitation on the power chip can be reduced, and the position of the support rod can be made more reasonable, so as to provide more balanced support for the heat dissipation substrate and avoid the heat dissipation substrate from tilting during manufacturing and transportation.

[0071] This application also provides an electronic device that includes the aforementioned power module.

[0072] The above technical solution has the following advantages and beneficial effects: Since the electronic device includes the aforementioned power module, it has the same advantages as the aforementioned power module. Attached Figure Description

[0073] The following drawings, which are incorporated herein by reference and are used to understand this application, illustrate embodiments of the invention and their descriptions, thereby explaining the apparatus and principles of the invention.

[0074] Figure 1 A top view of the power module in an embodiment of this application is shown.

[0075] Figure 2 A schematic diagram showing the dimensions of the power module in each direction in an embodiment of this application is shown.

[0076] Figure 3 A top view of the power module in an embodiment of this application is shown.

[0077] Figure 4A It shows along Figure 3 A schematic cross-sectional view of a power module in an example obtained by the mid-section line AA.

[0078] Figure 4B It shows along Figure 3 A schematic cross-sectional view of the power module in another example obtained by the mid-section line AA.

[0079] Figure label:

[0080] 100. Power module;

[0081] 10. Encapsulating resin; 11. First side; 12. Second side;

[0082] 20. Drive-side frame; 21. Drive-side pad; 22. High-voltage drive-side pad; 221. High-voltage drive integrated circuit; 23. Low-voltage drive-side pad; 231. Low-voltage drive integrated circuit;

[0083] 24. Driver side pin; 241. Floating power supply voltage positive terminal pin; 242. Floating power supply voltage negative terminal pin; 243. Chip power supply voltage pin; 25. Bootstrap chip pad; 251. Bootstrap chip;

[0084] 30. Heat sink substrate; 31. Power side pad; 32. High voltage power side pad; 321. High voltage power side RC-IGBT; 33. Low voltage power side pad; 331. Low voltage power side RC-IGBT; 34. Power side pin; 35. Gate pad; 36. Emitter pad; 37. Jumper area; 262. Pin electrical connection line; 2621. First connection line; 2622. Second connection line; 38. Support rod.

[0085] 301, First conductive layer; 302, Second conductive layer; 303, Insulating layer; 3001, First surface; 3002, Second surface; 3031, First surface; 3032, Second surface. Detailed Implementation

[0086] The following description provides numerous specific details to offer a more thorough understanding of this application. However, it will be apparent to those skilled in the art that this application can be practiced without one or more of these details. In other instances, certain technical features well-known in the art have not been described to avoid confusion with this application.

[0087] It should be understood that this application can be implemented in various forms and should not be construed as limited to the embodiments set forth herein. Rather, providing these embodiments will make the disclosure thorough and complete, and will fully convey the scope of this application to those skilled in the art. In the drawings, for clarity, the dimensions and relative dimensions of layers and regions may be exaggerated. The same reference numerals denote the same elements throughout.

[0088] It should be understood that although the terms first, second, third, etc., may be used to describe various elements, components, areas, layers, and / or parts, these elements, components, areas, layers, and / or parts should not be limited by these terms. These terms are only used to distinguish one element, component, area, layer, or part from another element, component, area, layer, or part. Therefore, without departing from the teachings of this application, the first element, component, area, layer, or part discussed below may be referred to as the second element, component, area, layer, or part.

[0089] Spatial relation terms such as "below," "under," "below," "under," "above," and "above" are used here for convenience to describe the relationship between one element or feature shown in the figure and other elements or features. It should be understood that, in addition to the orientation shown in the figure, spatial relation terms are intended to also include different orientations of devices in use and operation.

[0090] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the scope of this application. When used herein, the singular forms “a,” “an,” and “ / the” are also intended to include the plural forms unless the context clearly indicates otherwise. It should also be understood that the terms “compose” and / or “comprising,” when used in this specification, identify the presence of features, integers, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups. When used herein, the term “and / or” includes any and all combinations of the associated listed items.

[0091] Embodiments of the utility model are described herein with reference to cross-sectional views that serve as schematic diagrams of preferred embodiments (and intermediate structures) of this application. Thus, variations in the shown shape can be anticipated due to, for example, manufacturing techniques and / or tolerances. Therefore, embodiments of this application should not be limited to the specific shapes shown herein, but include shape deviations due to, for example, manufacturing processes. Consequently, the figures are substantially schematic, and their shapes are not intended to show the actual shape of the device and are not intended to limit the scope of this application.

[0092] To fully understand this utility model, detailed steps and structures will be presented in the following description to illustrate the technical solution proposed in this application. Preferred embodiments of this application are described in detail below; however, in addition to these detailed descriptions, this application may have other embodiments.

[0093] Below, we will refer to the appendix. Figures 1 to 4B An embodiment of a power module in this application will be described, wherein, for clearer dimension labeling, Figure 2 The labels of several structures have been omitted, but they can all be referred to as [reference needed]. Figure 1 It is worth mentioning that, without conflict, the various technical features in the embodiments of this application can be combined with each other.

[0094] To solve the technical problems mentioned in the background section, such as Figure 1 and Figure 2 As shown, this application embodiment provides a power module 100, including: RC-IGBT, driver integrated circuit, heat dissipation substrate 30 and encapsulation resin 10, etc.

[0095] A reverse-conducting IGBT (RC-IGBT) can be a generally rectangular semiconductor switching element, comprising an IGBT (Insulated Gate Bipolar Transistor) mounted on a single semiconductor substrate and a freewheeling diode. Since individual IGBT chips or freewheeling diodes mounted on different semiconductor substrates each contain a termination region and an active region, the termination portion can be shared when two devices are combined into a single chip, thereby reducing the area of ​​the termination portion. Therefore, the size of an RC-IGBT is typically smaller than the size of a structure where the IGBT and freewheeling diode are mounted on different semiconductor substrates. Thus, using an RC-IGBT as the power chip in a power module can reduce the size of the power chip and even the overall power module. Reverse-conducting insulated gate bipolar transistors are single-type power chips, which reduces the number of chips in the power module 100 and the number of bonding wires.

[0096] In some embodiments, the RC-IGBT includes a termination structure, which may employ a lateral variable doping structure. The above technical solution has the following advantages and benefits: the lateral variable doping structure of the RC-IGBT termination structure, compared to a field-limiting ring or a field-limiting ring plus a field plate termination structure, can further reduce the chip area of ​​the RC-IGBT, thereby facilitating module miniaturization.

[0097] Lateral doping refers to the formation of a region with a gradual change in impurity doping concentration in the terminal region of a device through methods such as ion implantation. Typically, ion implantation is performed on the substrate region near the heavily doped main junction to form a lateral doping structure. The doping concentration is higher in the region closer to the main junction and lower in the region farther away.

[0098] In some embodiments, the number of RC-IGBTs is multiple, for example, including three high-voltage power-side RC-IGBTs and three low-voltage power-side RC-IGBTs constituting the inverter. Specifically, the number of RC-IGBTs can be reasonably set according to actual needs.

[0099] In some embodiments, the rated current of the RC-IGBT is defined as I, where I satisfies the relationship: 70A≤I≤80A. In the embodiments of this application, in order to achieve a larger current specification, such as a package of 70A≤I≤80A, within a smaller encapsulation resin, the relevant dimensions of the encapsulation resin and the RC-IGBT have been optimized, which will be described in detail below.

[0100] The driver integrated circuit and the RC-IGBT are electrically connected for controlling the RC-IGBT. For example, the driver integrated circuit and the RC-IGBT are electrically connected via an electrical connector such as a wire. The driver integrated circuit controls the RC-IGBT, for example, by driving the RC-IGBT to turn it on or off. Or, for example, it protects the RC-IGBT in case of abnormality (e.g., overvoltage protection and / or overtemperature protection and / or electrostatic protection, etc.).

[0101] The number of driver integrated circuits can be reasonably set according to the RC-IGBTs that need to be driven. For example, the number of driver integrated circuits can be one or more. When there are multiple ones, it can include one high-voltage driver integrated circuit and one low-voltage driver integrated circuit, or three high-voltage driver integrated circuits and one low-voltage driver integrated circuit, or other suitable cases. The high-voltage driver integrated circuit drives the high-voltage power-side RC-IGBT to turn on or off, while the low-voltage driver integrated circuit drives the low-voltage power-side RC-IGBT to turn on or off. Optionally, the driver integrated circuit can integrate multiple electronic components, such as transistors, diodes, triodes, resistors, or capacitors.

[0102] The heat dissipation substrate 30 has a first side and a second side arranged opposite to each other. The RC-IGBT is disposed on the first side of the heat dissipation substrate 30. For example, the first side of the heat dissipation substrate 30 has a power-side pad 31, and the RC-IGBT is disposed on the power-side pad 31. The heat dissipation substrate 30 can support the RC-IGBT, and the heat dissipation substrate 30 has good thermal conductivity, which can improve the heat dissipation effect of the RC-IGBT and enhance its reliability. The power-side pad 31 on the first side of the heat dissipation substrate allows the RC-IGBT to be led out for electrical connection with other components. Direct electrical connection of the RC-IGBT is achieved by directly disposing of it on the power-side pad 31, optimizing the wiring of the power module and simplifying its structure. Optionally, the heat dissipation substrate can be a ceramic substrate with a conductive layer or other suitable type of substrate.

[0103] In some embodiments, the area of ​​the heat dissipation substrate 30 is set to S, where S satisfies the relationship: 161.25mm² ≤ S ≤ 275mm² 2 This configuration allows the encapsulating resin to meet both the space requirements of the drive-side frame or drive-side PCB (printed circuit board) for mounting the driver integrated circuit and the space requirements of the heat dissipation substrate for power chips (such as IGBTs and FRDs, or RC-IGBTs).

[0104] The encapsulating resin (10) encapsulates the RC-IGBT, the heat sink substrate 30, and the driver integrated circuit. The encapsulating resin is obtained by mold encapsulation, which can be generated, for example, by transfer molding using a thermosetting resin. The encapsulating resin can be epoxy resin or other resin materials suitable for semiconductor module encapsulation. The two opposite sides of the width direction of the encapsulating resin are the driving side and the power side, respectively. At least a portion of the heat sink substrate, the RC-IGBT, and the driver integrated circuit are encapsulated within the encapsulating resin. In this way, the encapsulating resin can provide physical and electrical protection for at least a portion of the heat sink substrate, the RC-IGBT, and the driver integrated circuit to prevent damage to at least a portion of the heat sink substrate, the RC-IGBT, and the driver integrated circuit caused by external environmental impacts, thereby ensuring the normal operation of the power module 100.

[0105] Currently, in related technologies, power module products for driving motors, typically using power chips with current specifications of 70A≤I≤80A, usually have a resin encapsulation (sometimes called a molding compound) with a length of approximately 52.5mm and a width of approximately 31mm, resulting in a heat dissipation substrate area of ​​approximately 713mm². 2 The power chips in these devices typically consist of IGBTs and fast recovery diodes (FRDs). Related technologies can only package large-current IGBT chips in large packages, which is clearly detrimental to product miniaturization. This application, however, achieves the packaging of chips with larger current ratings in small packages.

[0106] In this application embodiment, in order to realize a power chip with a larger current specification within a smaller encapsulation resin, such as encapsulating a power chip with a current rating of 70A≤I≤80A, the relevant dimensions of the encapsulation resin and RC-IGBT have been optimized. In some embodiments of this application, such as... Figure 1 and Figure 2 As shown, the width direction of the encapsulating resin is set (i.e., Figure 2 The width L1 (as shown in the width direction) is less than or equal to 33mm, and the length direction of the encapsulation resin of the power module is set (i.e., the width direction is the same as the width direction shown in the figure). Figure 2 If the length of the encapsulating resin (in the direction shown) is L2, then L2 is less than or equal to 60mm. Reducing the length and width of the encapsulating resin can help to achieve product miniaturization.

[0107] When 70A ≤ I ≤ 80A, it falls under the category of high current specifications. The higher the chip current specification, the higher the chip temperature, and the greater the thermal stress on the chip. For relatively small packages, heat dissipation is usually limited, leading to higher chip temperatures and greater thermal stress, which in turn increases the probability of chip failure. Therefore, in some embodiments of this application, the width L1 of the encapsulating resin is greater than or equal to 29mm, i.e., 29mm ≤ L1 ≤ 33mm, and the length L2 of the encapsulating resin is greater than or equal to 50mm, i.e., 50mm ≤ L2 ≤ 60mm. By keeping the dimensions of the encapsulating resin within the above range, it is beneficial to miniaturize the product while meeting the 70A ≤ I ≤ 80A current specification requirement as much as possible. This allows for the encapsulation of a larger current specification within a relatively small encapsulating resin, suppressing the problem of higher chip temperatures and greater thermal stress caused by excessively small encapsulating resin dimensions, thereby reducing the probability of chip failure.

[0108] When the rated current I of the RC-IGBT is less than 70A, the heat dissipation margin of the RC-IGBT chip is large due to the heat dissipation substrate and package. Also, because the current specification is relatively small, the heat generated by the RC-IGBT chip during operation is low, so the temperature will also be low. Consequently, the thermal stress of the chip is small, and the failure of the RC-IGBT chip packaged in a relatively small package is almost impossible. This means that the aspect ratio of the chip and the ceramic substrate material will not impose limitations on the power module, and the impact on the chip reliability is small.

[0109] However, when 70A≤I≤80A, it is considered a high current specification. The higher the chip current specification, the higher the chip temperature, and the greater the thermal stress on the chip. In the above-mentioned small package (e.g., L2≤60mm, L1≤33mm), the chip heat dissipation is limited, resulting in higher chip temperature and greater thermal stress. In particular, the influence of the excessively large ratio of the RC-IGBT chip length L3 to the RC-IGBT chip width L4 (i.e., aspect ratio) is added. At this time, the stress concentration of the chip with a large aspect ratio increases sharply, the unevenness of thermal expansion increases sharply at high temperature, and the stress difference between different areas increases sharply. Therefore, in a small package, the RC-IGBT is a high current specification, and the RC-IGBT has a large aspect ratio. The combined effect of these three factors can easily lead to a sharp increase in the probability of chip failure.

[0110] Therefore, in this embodiment, the aspect ratio of the RC-IGBT is less than or equal to 1.48, such as 1.46, 1.45, 1.4, 1.35, 1.3, or 1.2. This setting reduces the chip aspect ratio for high current specifications (70A≤I≤80A), thus reducing stress concentration and uneven thermal expansion at high current levels within the aforementioned small package (e.g., L2≤60mm, L1≤33mm). This significantly reduces the failure probability of high-current chips, thereby providing a semiconductor device (e.g., a power module) that combines miniaturization, high current specifications, and high reliability. In some examples, the aspect ratio of the RC-IGBT can be further reduced to less than 1.45; in others, it can be less than or equal to 1.4 to reduce chip stress under high current specifications and make stress increase more gradual, effectively solving the problem of uneven thermal expansion at high temperatures and significantly reducing the failure probability of high-current chips.

[0111] Furthermore, when the area S of the heat dissipation substrate is in the range of 480 mm² 2 -820mm 2 While chip heat dissipation is further limited, reducing the aspect ratio of the RC-IGBT to less than or equal to 1.48 decreases the chip aspect ratio for high current specifications (70A≤I≤80A), making it possible to achieve the same performance with the aforementioned small package and small heat dissipation substrate (e.g., L2≤60mm, L1≤33mm, 480mm). 2 ≤ Heat sink area S≤ 820mm² 2 Under these conditions, the stress concentration of the chip under high current specifications can be reduced, and the problem of uneven thermal expansion at high temperature can be effectively solved, which can significantly reduce the failure probability of high current specification chips. This is conducive to providing a semiconductor device (such as a power module) that combines miniaturization, high current specifications and high reliability.

[0112] If the aspect ratio is too small, for example, less than or equal to 1, it means that the width of the RC-IGBT chip increases (i.e., the lateral dimension increases). According to the current circuit pattern design on the heat sink substrate, the lateral dimension of the power side pad 31 used to connect to the RC-IGBT is much smaller than the vertical dimension. Correspondingly, the variable lateral dimension of the RC-IGBT is much smaller than the variable vertical dimension of the chip. Therefore, a larger RC-IGBT width is not conducive to the miniaturization of semiconductor devices. Thus, in some embodiments, the aspect ratio of the RC-IGBT is greater than 1, that is, the vertical dimension is relatively large, which can be more conducive to the miniaturization of semiconductor devices. In some embodiments, the aspect ratio of the RC-IGBT is less than or equal to 1.45 and greater than or equal to 1.3, or other suitable ranges, which are not specifically limited here.

[0113] It is worth mentioning that, in this embodiment, the aspect ratio of the RC-IGBT, i.e., the ratio of its length L3 to its width L4, is typically greater than its width L4. The width direction of the encapsulating resin is generally parallel to the length direction of the RC-IGBT; therefore, the length L3 of the RC-IGBT in the length direction is also the dimension of the RC-IGBT in the width direction of the encapsulating resin. Conversely, the length direction of the encapsulating resin is generally parallel to the width direction of the RC-IGBT; therefore, the width L4 of the RC-IGBT in the width direction is also the dimension of the RC-IGBT in the length direction of the encapsulating resin.

[0114] If the width of the RC-IGBT is too small, it may increase the aspect ratio of the RC-IGBT. As mentioned earlier, a large aspect ratio can easily increase the failure probability of the RC-IGBT. Furthermore, a large width can also lead to an increase in the overall size of the power module. Therefore, in some embodiments, the width L4 of the RC-IGBT is greater than or equal to 3mm and less than or equal to 6mm, so that the aspect ratio of the RC-IGBT is not too large, thereby reducing the chip failure probability without increasing the overall size of the product.

[0115] Furthermore, to improve the heat dissipation of the power module, at least a portion of the second surface of the heat dissipation substrate 30 (also referred to as the bottom surface of the heat dissipation substrate) is exposed from the encapsulating resin. For example, the bottom surface of the heat dissipation substrate 30 is exposed from the encapsulating resin, while the other surfaces are covered by the encapsulating resin. This arrangement improves the heat dissipation performance of the heat dissipation substrate to the outside of the power module, thereby enhancing the stability and reliability of the power module. In one example, the second surface of the heat dissipation substrate may also be flush with the bottom surface of the encapsulating resin.

[0116] Figure 3 A top view of the power module is shown, which is compared to Figure 1 and Figure 2 However, it did not present some details about the interior of the encapsulating resin. Among them, Figure 4A and Figure 4B It is along Figure 3 A schematic cross-sectional view of the power module obtained from the AA section. In some embodiments, such as Figure 4A and Figure 4B As shown, the heat dissipation substrate 30 has a first surface 3001 and a second surface 3002 disposed opposite to each other, wherein the RC-IGBT is disposed on the first surface 3001 of the heat dissipation substrate 30. In some examples, such as Figure 4A and Figure 4BAs shown, the heat dissipation substrate 30 includes an insulating layer 303 and a conductive layer. The insulating layer 303 has a first surface 3031 and a second surface 3032 opposite to the first surface 3031. The conductive layer is at least disposed on the first surface 3031 of the insulating layer 303. The insulating layer 303 can be a ceramic layer, which can be a ceramic material with a higher thermal conductivity than Al2O3, such as at least one of aluminum nitride ceramic layer or silicon nitride ceramic layer. By using a ceramic material with a higher thermal conductivity than Al2O3, the heat dissipation performance of the heat dissipation substrate can be improved, thereby dissipating heat generated by components such as the RC-IGBT and the conductive layer. This helps to reduce the temperature of the power module 100, thereby suppressing heat accumulation during operation of the power module 100 and ensuring safety. Furthermore, the insulating layer also serves as an insulator, preventing the conductive layer electrically connected to the RC-IGBT from being electrically connected to the outside environment, thus ensuring the normal operation of the power module 100 and improving the electrical safety of the power module 100.

[0117] In some embodiments, such as Figure 4A As shown, the conductive layer of the heat dissipation substrate 30 may include a first conductive layer 301, which is disposed on the first surface 3031 of the insulating layer 303. That is, the surface of the first conductive layer 301 away from the insulating layer 303 constitutes at least a portion of the first surface 3001 of the heat dissipation substrate 30, and the second surface 3032 of the insulating layer 303 constitutes the second surface 3002 of the heat dissipation substrate 30. Therefore, at least a portion of the second surface 3032 of the insulating layer 303 is exposed in the encapsulation resin 10.

[0118] In other embodiments, the conductive layer of the heat dissipation substrate 30 may be at least two layers. For example, the conductive layer may include a first conductive layer 301 and a second conductive layer 302. The first conductive layer 301 is disposed on the first surface 3031 of the insulating layer 303, and the second conductive layer is disposed on the second surface 3032 of the insulating layer 303. The surface of the first conductive layer 301 away from the insulating layer 303 constitutes at least a portion of the first surface 3001 of the heat dissipation substrate 30, and the surface of the second conductive layer 302 away from the insulating layer 303 constitutes at least a portion of the second surface 3002 of the heat dissipation substrate 30. In this case, at least a portion of the surface of the second conductive layer 302 is exposed in the encapsulating resin 10.

[0119] Optionally, the conductive layer can be made of a metallic material, such as one or more of copper, aluminum, silver, gold, tin, etc. For example, the conductive layer may be made of copper.

[0120] In some embodiments, for example, a pattern may be etched on the first conductive layer 301 of the copper layer. This pattern may correspond to power-side pads 31 corresponding to one or more RC-IGBTs. The first conductive layer includes power-side pads 31, with a gap between adjacent power-side pads 31, exposing a portion of the insulating layer 303 at the gap. The copper layer can support the RC-IGBTs and serve as a conductor. For the heat dissipation substrate 30 with a second conductive layer 302, the second conductive layer 302 may be unpatterned and exposed from the bottom surface of the molding compound. Utilizing the good thermal conductivity of the second conductive layer 302, the heat dissipation performance of the heat dissipation substrate 30 is further improved, thereby ensuring the normal operation of the power module 100 and improving the electrical safety of the power module 100.

[0121] The heat dissipation substrate 30 can be fabricated using any suitable process, such as Active Metal Bonding (AMB). This process utilizes an active metal solder containing a small amount of active metal elements (Ti, Zr, Hf, V, Nb, or Ta) to achieve welding between a metal, such as copper foil, and a ceramic substrate (i.e., the insulating layer). These metal elements have high activity, which can improve the wettability of the solder on the ceramic after melting, allowing welding to the metal without metallization of the ceramic surface. The general process is as follows: first, solder is coated onto the ceramic substrate; then, it is brazed and sintered under vacuum at high temperature to weld the copper layer to the ceramic substrate; then, photolithography and copper etching of the circuit pattern are performed; finally, the active metal solder layer is etched. The copper / ceramic interface formed by the AMB process has better bonding strength. When the insulating layer in the embodiments of this application is an aluminum nitride ceramic layer or a silicon nitride ceramic layer, the heat dissipation substrate 30 can be fabricated using active metal bonding technology. In some other embodiments, the first conductive layer can also be at least a portion of, for example, a metal frame, which can be disposed on the insulating layer by, for example, welding or bonding.

[0122] In some embodiments, there are multiple RC-IGBTs and multiple power-side pads 31 on the heat dissipation substrate. The multiple RC-IGBTs are spaced apart in the length direction of the encapsulation resin 10, and can also be staggered in the width direction of the encapsulation resin. That is, the multiple RC-IGBTs are not aligned in the width direction of the encapsulation resin, or they can be aligned in the width direction. The specific arrangement can be reasonably set according to the layout requirements of the actual power module.

[0123] In some embodiments, the plurality of RC-IGBTs includes at least one high-voltage power-side RC-IGBT 321 and at least one low-voltage power-side RC-IGBT 331, with the high-voltage power-side RC-IGBT 321 and the low-voltage power-side RC-IGBT 331 respectively disposed on different power-side pads 31. By disposing at least one high-voltage power-side RC-IGBT 321 and at least one low-voltage power-side RC-IGBT 331 on different power-side pads 31, better electrical isolation can be achieved for different types of RC-IGBTs, enabling the necessary connection structures to be achieved through pins and connecting lines, which is beneficial for the normal operation of the power module.

[0124] Optionally, multiple RC-IGBTs can be arranged according to actual needs. In this embodiment, the details of the power module are mainly described using the case where the number of low-voltage power-side RC-IGBTs is three and the number of high-voltage power-side RC-IGBTs is three. However, this is not intended to be a limitation. In some possible embodiments, there may be other different numbers of high-voltage power-side RC-IGBTs or low-voltage power-side RC-IGBTs.

[0125] In some embodiments, the power-side pads 31 of the heat dissipation substrate 30 include low-voltage power-side pads 33 and high-voltage power-side pads 32. There are three low-voltage power-side pads 33, spaced apart along the length of the encapsulating resin. There is one high-voltage power-side pad 32, also spaced apart from the three low-voltage power-side pads 33 along the length of the encapsulating resin. The two sides of the encapsulating resin along its length are designated as a first side 11 and a second side 12, respectively. The low-voltage power-side pads 33 are closer to the first side 11 along this length, and the high-voltage power-side pads 32 are closer to the second side 12 along the length of the encapsulating resin. This arrangement allows for a more rational layout of the power module and a simpler and more regular arrangement of the leads connected to the pads.

[0126] Optionally, three low-voltage power-side RC-IGBTs 331 are respectively disposed on three low-voltage power-side pads 33, and three high-voltage power-side RC-IGBTs 321 are each disposed on one high-voltage power-side pad 32. The three high-voltage power-side RC-IGBTs are spaced apart along the length of the encapsulating resin on the high-voltage power-side pad 32. By having three high-voltage power-side RC-IGBTs correspond to one high-voltage power-side pad 32, the number of pins and wires can be reduced, simplifying the layout structure of the power module, making its structure more compact, and facilitating the miniaturization of the power module.

[0127] In some embodiments, each low-voltage power side pad 33 has an edge extending along the length of the encapsulating resin near the drive-side frame. The dimension of this edge along the length of the encapsulating resin is set to L6, and L6 ranges from 5.5mm to 7mm. The high-voltage power side pad 32 has a first side extending along the width of the encapsulating resin, which is away from the second side 12 of the encapsulating resin. The dimension of this first side along the width of the encapsulating resin is set to L7, and it ranges from 8.9mm to 10.9mm.

[0128] In other embodiments, each high-voltage power-side RC-IGBT 321 may correspond to one high-voltage power-side pad 32, or two high-voltage power-side RC-IGBTs may correspond to one high-voltage power-side pad. Alternatively, in other embodiments, at least two low-voltage power-side RC-IGBTs may correspond to one low-voltage power-side pad. Specifically, the settings can be reasonably configured according to actual needs.

[0129] More specifically, in some embodiments, the power module 100 further includes a power-side pin 34, a portion of which is encapsulated in a resin and located on the side of the heat sink substrate 30 away from the driver integrated circuit along the width direction of the resin. The power-side pin 34 is electrically connected to the RC-IGBT, and the external circuitry of the RC-IGBT can be electrically connected through the power-side pin.

[0130] In some embodiments, the first side of the heat dissipation substrate (30) further has a plurality of jumper areas 37, each jumper area 37 being located on the side of the RC-IGBT to which it is electrically connected, away from the driver integrated circuit along the width direction of the encapsulation resin 10. By providing jumper areas 37, flexible configuration and optimization of the heat dissipation substrate can be easily achieved, improving the performance and reliability of the device. More specifically, for example, each

[0131] The RC-IGBT can be connected to a jumper section 37 and electrically connected to the corresponding power side pin 34 through the jumper section 37.

[0132] In some embodiments, each RC-IGBT includes a gate pad 35 and an emitter pad 36. The gate pad 35 is electrically connected to the driver integrated circuit, and the emitter pad 36 is electrically connected to the power-side pin 34 via multiple pin connection lines 262. More specifically, for example, the emitter pad 36 is provided with pin connection solder points, and the pin connection solder points are connected to the power-side pin 34 via pin connection lines 262. The pin connection solder points extend in the width direction of the encapsulation resin. Each RC-IGBT has multiple pin connection solder points 361, which are spaced apart in the length direction of the encapsulation resin. Each RC-IGBT is connected to its corresponding power-side pin 34 via multiple pin connection lines 262, and each pin connection line 262 of each RC-IGBT is connected to the multiple pin connection solder points one-to-one. This arrangement enables the electrical connection between the RC-IGBT and its corresponding pins, allowing the RC-IGBT to form a suitable circuit structure to achieve the normal function of the power module.

[0133] In some embodiments, each pin electrical connection line 262 includes a first connection line 2621 and a second connection line 2622. The first connection line 2621 electrically connects the emitter pad 36 and the corresponding jumper area 37, and the jumper area 37 is electrically connected to the corresponding power side pin 34 through the second connection line.

[0134] The gate pad 35 can be located in the general middle of the RC-IGBT near the drive side frame 20, or it can be located at the corner of the RC-IGBT.

[0135] One end of each power-side pin 34, which is used for electrical connection with the RC-IGBT, is encapsulated in resin, while the other end of the power-side pin 34 extends out of the resin for electrical connection with external circuitry.

[0136] In some embodiments, the encapsulating resin is configured with two sides along its length, namely a first side 11 and a second side 12. The lead electrical connection wire 262 has a bending angle α towards the first side 11. That is, an included angle α is formed between the first connection wire 2621 and the second connection wire 2622 that connect to the same jumper area. α satisfies the relationship: 100°≤α≤165°. By making the included angle α satisfy the above relationship, it is easier to wire the lead electrical connection wires, and it can also ensure the insulation distance between multiple lead electrical connection wires, avoiding short circuits caused by the lead electrical connection wires being too close together, which could damage the device.

[0137] In some embodiments, the length of the pin electrical connection 262 is set to L5. In the figure, the pin electrical connection 262 includes a first connection line 2621 and a second connection line 2622. The length L5 is the sum of the length L51 of the first connection line 2621 and the length L52 of the second connection line 2622. L5 satisfies the relationship: 13mm≤L5≤24mm. With this setting, it can be ensured that the length of the pin electrical connection 262 meets the requirements for normal electrical connection between the emitter of the RC-IGBT and the power side pin 34. At the same time, it can also suppress the problems of material waste, increased resistance and increased inductance caused by excessive length of the pin electrical connection, thereby reducing the power consumption of the power module and improving the stability of the power module.

[0138] It is worth mentioning that, in the embodiments of this application, the number of pin electrical connection lines 262 that connect each RC-IGBT and the corresponding power side pin can be 1 or more or more than 2. The accompanying drawings of this application mainly show the case where there are 2 pin electrical connection lines 262, but this is not intended to constitute a limitation.

[0139] Furthermore, in some embodiments of this application, a driver-side frame 20 is also included. A portion of the driver-side frame 20 is encapsulated in encapsulating resin. The driver-side frame 20 includes driver-side pads 21 and driver-side pins 24. A driver integrated circuit is disposed on the driver-side pads 21, and the driver integrated circuit is electrically connected to the driver-side pins 24. The heat dissipation substrate 30 and the driver-side frame 20 are spaced apart in the width direction. Optionally, a portion of the driver-side pins 24 extends out of the encapsulating resin to facilitate electrical connection with external circuitry. Utilizing a driver-side frame to house the driver integrated circuit and integrate the driver-side pins facilitates high integration, reduces the number of components, shrinks the overall size, and makes the power module structure more compact. It also enhances heat dissipation and improves the stability and reliability of the power module.

[0140] In other embodiments, a PCB board can be used instead of the drive-side frame 20. The PCB board (i.e., a printed circuit board) is encapsulated in encapsulating resin and has drive-side pads. The power module also includes drive-side pins (e.g., the drive-side pins and the PCB board are two independent devices). The drive-side pins are electrically connected to the PCB board (e.g., by soldering or other suitable methods). A drive integrated circuit is disposed on the drive-side pads and electrically connected to the drive-side pins. The heat dissipation substrate 30 and the PCB board are spaced apart in the width direction of the encapsulating resin. The side of the PCB board used for placing the drive integrated circuit can have various wiring and pad areas for placing the drive integrated circuit. The wiring can realize the electrical connection between each pad area and the corresponding drive-side pin or structure. Specifically, the structure of the PCB board can be reasonably selected according to actual needs and is not specifically limited here. The PCB board can realize the wiring and support of the drive integrated circuit, and the PCB board structure is simple and more friendly to packaging. In some examples, the driver-side pins and the corresponding driver-side pads on the PCB can be electrically connected by means such as soldering, connectors, wire bonding, or spring connections, without being specifically limited here.

[0141] A PCB (Printed Circuit Board) can be a substrate formed by patterning conductive copper foil on the surface of an insulating material (such as fiberglass, epoxy resin, etc.) to create electrical connections between electronic components. The PCB uses these copper foil lines to achieve electrical connections between electronic components and to support and fix the components on the board. Optionally, the PCB can be a single-sided, double-sided, or multi-sided PCB.

[0142] The following will use the case of the drive-side frame 20 as an example to explain some details of the drive-side frame 20.

[0143] In some embodiments, the driver-side pad 21 includes a low-voltage driver-side pad 23 and a high-voltage driver-side pad 22. There is one low-voltage driver-side pad 23 and three high-voltage driver-side pads 22. The three high-voltage driver-side pads 22 and one low-voltage driver-side pad 23 are spaced apart along the length direction. The two sides of the encapsulation resin along the length direction are designated as a first side 11 and a second side 12, respectively. The low-voltage driver-side pad 23 is closer to the first side 11 along the length direction, and the high-voltage driver-side pads 22 are closer to the second side 12 along the length direction. The driver integrated circuit includes one low-voltage driver integrated circuit 231 and three high-voltage driver integrated circuits 221. The low-voltage driver integrated circuit 231 is disposed on one low-voltage driver-side pad 231. On the 3rd floor, a high-voltage driver integrated circuit 221 is disposed on a high-voltage driver-side pad 22, that is, each high-voltage driver integrated circuit 221 is disposed on a corresponding high-voltage driver-side pad 22. When there are multiple RC-IGBTs, including multiple low-voltage power-side RC-IGBTs and multiple high-voltage power-side RC-IGBTs, a low-voltage driver integrated circuit 231 is electrically connected to multiple low-voltage power-side RC-IGBTs 331 (e.g., one low-voltage driver integrated circuit 231 is electrically connected to three low-voltage power-side RC-IGBTs 331), and a high-voltage driver integrated circuit 221 is electrically connected to one high-voltage power-side RC-IGBT 321. This method allows for a more rational layout of the power module and a more balanced lead distribution between the driver integrated circuits and RC-IGBTs. For the high-voltage side, one high-voltage driver integrated circuit drives one high-voltage power-side RC-IGBT 321, which improves the stability of the power module.

[0144] Furthermore, in some embodiments, the power module further includes three bootstrap chips 251, which are disposed on the drive-side pins 24. The drive-side pins 24 further include three floating positive supply voltage pins 241, each extending in the width direction and spaced apart from its corresponding high-voltage drive-side pad in the length direction. Each floating positive supply voltage pin 241 has a bootstrap chip pad 25, and the three bootstrap chips 251 are respectively disposed on the bootstrap chip pads 25 of the three floating positive supply voltage pins 241. Optionally, the three high-voltage power sides can correspond to three bootstrap chips (e.g., a circuit including a bootstrap diode). The bootstrap chips can provide power isolation, improve the drive voltage, and achieve automatic gain control. Furthermore, placing the bootstrap chips on the drive-side pins optimizes circuit layout and wiring, which is beneficial for the miniaturization of the power module.

[0145] In some embodiments, the driver-side pin 24 further includes three floating supply voltage negative pins 242. Each floating supply voltage negative pin 242 extends in the length direction and is positioned in the width direction on the side of the floating supply voltage positive pin 241 away from its adjacent high-voltage driver-side pad 22. Each RC-IGBT is electrically connected to its corresponding floating supply voltage negative pin 242. By electrically connecting the RC-IGBT and the floating supply voltage negative pin 242, the anti-interference capability of the chip can be improved, and the stability of the power module can be enhanced. In some embodiments, the driver-side pin 24 also includes chip power supply voltage pins 243, such as three chip power supply voltage pins 243. Each chip power supply voltage pin 243 is spaced apart on the side of the high-voltage driver-side pad 22 away from the heat sink substrate 30 in the width direction. Each bootstrap chip 251 is electrically connected to its adjacent chip power supply voltage pin 243, and each floating supply voltage positive pin 241 is electrically connected to its adjacent high-voltage driver integrated circuit 221. The chip power supply voltage pins 243 are used to connect to the power supply voltage Vcc to power the chip.

[0146] In other embodiments, the bootstrap chip can also be integrated within a high-voltage driver integrated circuit. For example, each high-voltage driver integrated circuit may integrate a bootstrap chip, such as a bootstrap diode, and other necessary electronic components. In this case, the drive-side pin 24 is implemented with the following structure and electrical connections: the drive-side pin 24 includes three floating positive supply voltage pins 241, three floating negative supply voltage pins 242, and three chip supply voltage pins 243. Each floating positive supply voltage pin 241 extends in the width direction and is spaced apart from its corresponding high-voltage driver-side pad in the length direction; each chip supply voltage pin 243 is spaced apart... Located on the side of the high-voltage drive-side pad 22 away from the heat sink substrate 30 in the width direction, each high-voltage drive integrated circuit 221 is electrically connected to its adjacent chip power supply voltage pin 243. Each floating power supply voltage positive terminal pin 241 is also electrically connected to its adjacent high-voltage drive integrated circuit 221. Each floating power supply voltage negative terminal pin 242 extends in the length direction and is located on the side of the floating power supply voltage positive terminal pin 241 away from its adjacent high-voltage drive-side pad 22 in the width direction. The emitter pad 36 of each RC-IGBT, such as an RC-IGBT, is electrically connected to its corresponding floating power supply voltage negative terminal pin 242. By integrating the bootstrap chip into the high-voltage drive integrated circuit, circuit design can be simplified, the number of components and connections reduced, space saved, and the complexity and failure rate of the power module lowered, which is beneficial for the miniaturization of the power module. It is worth mentioning that in some embodiments, in order to reduce the space occupied by the drive-side pins, the floating power supply voltage negative terminal pin 242 may not cross other pins in the length direction.

[0147] In some embodiments, such as Figure 1 and Figure 2 As shown, it also includes two support rods 38, which are respectively disposed adjacent to the first side 11 and the second side 12 and are both connected to the heat dissipation substrate 30. They are used to support the heat dissipation substrate 30 during the manufacturing process. During the manufacturing process, one end of the support rod 38 is connected to the heat dissipation substrate 30, and the other end is connected to the frame during the manufacturing process (during the manufacturing process, after the encapsulation resin is molded, the other end of the support rod 38 is cut off from the frame). The support rod 38 is spaced apart from the adjacent power side pad 31, so that the support rod 38 and the power side pad 31 are electrically isolated. A low-voltage power side pad 33 adjacent to the first side 11 has a first long side extending in the width direction. The first long side is disposed between the drive side frame and the support rod 38. If the dimension of the first long side in the width direction is set as A, then 7mm≤A≤8.3mm. Because a size A that is too small will limit the size of the power chip, while a size A that is too large will cause the support rod to be positioned further away from the drive-side frame, resulting in an uneven support for the heat sink substrate. This can easily lead to tilting during manufacturing and transportation. By ensuring that 7mm≤A≤8.3mm, the size limitation on the power chip can be reduced, and the position of the support rod can be made more reasonable, thereby providing a more balanced support for the heat sink substrate and preventing the heat sink substrate from tilting during manufacturing and transportation.

[0148] This concludes the introduction of the power module in the embodiments of this application. However, it is conceivable that other suitable components may exist in addition to the above structure, which are not specifically limited here.

[0149] In summary, the power module according to the embodiments of this application, by using RC-IGBT as a semiconductor switching element, and by encapsulating a high-current RC-IGBT (70A≤I≤80A) in a small-package resin, and by reducing the aspect ratio of the RC-IGBT, achieves miniaturization of the power module while improving the stress concentration and uneven high-temperature thermal expansion problems of the high-current RC-IGBT (70A≤I≤80A), significantly reducing the failure probability of the RC-IGBT chip, thereby improving the reliability of the power module.

[0150] Another aspect of this application provides an electronic device that includes the aforementioned power module. This electronic device can include household appliances such as electric fans, air conditioners, kitchen range hoods, high-speed hair dryers, and washing machines. The power module can be used in the motor drive system of these household appliances. The electronic device can also be a new energy vehicle, industrial automation equipment, or a switching power supply.

[0151] Since the electronic device of this application has the aforementioned power module, it also has the advantages of the aforementioned power module.

[0152] Although exemplary embodiments have been described herein with reference to the accompanying drawings, it should be understood that the above exemplary embodiments are merely illustrative and are not intended to limit the scope of this application. Various changes and modifications can be made therein by those skilled in the art without departing from the scope and spirit of this application. All such changes and modifications are intended to be included within the scope of this application as claimed in the appended claims.

[0153] Numerous specific details are set forth in the specification provided herein. However, it will be understood that embodiments of this application may be practiced without these specific details. In some instances, well-known methods, structures, and techniques have not been shown in detail so as not to obscure the understanding of this specification.

[0154] Similarly, it should be understood that, in order to streamline this application and aid in understanding one or more of the various inventive aspects, features of this application may sometimes be grouped together in a single embodiment, figure, or description thereof in the description of exemplary embodiments of this application. However, this approach should not be construed as reflecting an intention that the claimed application requires more features than are expressly recited in each claim. Rather, as reflected in the corresponding claims, its inventive point lies in solving the corresponding technical problem with features fewer than all features of a single disclosed embodiment. Therefore, the claims following the detailed description are hereby expressly incorporated into that detailed description, wherein each claim itself is a separate embodiment of this application.

[0155] Those skilled in the art will understand that, apart from the mutual exclusion of features, all features disclosed in this specification (including the accompanying claims, abstract, and drawings) and all processes or elements of any method or apparatus so disclosed can be combined in any combination. Unless otherwise expressly stated, each feature disclosed in this specification (including the accompanying claims, abstract, and drawings) may be replaced by an alternative feature serving the same, equivalent, or similar purpose.

[0156] Furthermore, those skilled in the art will understand that although some embodiments herein include certain features included in other embodiments but not others, combinations of features from different embodiments are intended to be within the scope of this application and form different embodiments. For example, in the claims, any of the claimed embodiments can be used in any combination.

[0157] It should be noted that the above embodiments are illustrative of this application and not restrictive of this application, and that those skilled in the art can devise alternative embodiments without departing from the scope of the appended claims.

Claims

1. A power module (100), comprising: RC-IGBT; The driver integrated circuit is electrically connected to the RC-IGBT; A heat dissipation substrate (30) has a first side and a second side disposed opposite to each other, wherein the RC-IGBT is disposed on the first side of the heat dissipation substrate (30); An encapsulating resin (10) encapsulates the RC-IGBT, the heat dissipation substrate (30), and the driver integrated circuit, wherein at least a portion of the second surface of the heat dissipation substrate (30) is exposed from the encapsulating resin (10), wherein, The aspect ratio of the RC-IGBT is less than or equal to 1.48; The length of the encapsulating resin (10) in the longitudinal direction is less than or equal to 60 mm; The width of the encapsulating resin (10) in the width direction is less than or equal to 33 mm; and The rated current of the RC-IGBT is defined as I, and I satisfies the relationship: 70A≤I≤80A.

2. The power module according to claim 1, characterized in that, The aspect ratio of the RC-IGBT is also greater than 1.

3. The power module according to claim 1, characterized in that, The length of the encapsulating resin (10) in the longitudinal direction is also greater than or equal to 50 mm; and The width of the encapsulating resin (10) in the width direction is also greater than or equal to 29 mm.

4. The power module according to claim 1, characterized in that, Let the area of ​​the heat dissipation substrate (30) be S, where S satisfies the following relationship: 480 mm² 2 ≤S≤820mm 2 .

5. The power module according to claim 1, characterized in that, The width of the RC-IGBT is greater than or equal to 3mm and less than or equal to 6mm.

6. The power module according to claim 1, characterized in that, The heat dissipation substrate (30) has a power side pad (31) on its first side, and the RC-IGBT is disposed on the power side pad (31).

7. The power module according to claim 6, characterized in that, The heat dissipation substrate (30) includes: An insulating layer having a first surface and a second surface opposite to the first surface, wherein the insulating layer is at least one of an aluminum nitride ceramic layer or a silicon nitride ceramic layer; A conductive layer is disposed at least on a first surface of the insulating layer, wherein the conductive layer comprises: A first conductive layer is disposed on the first surface, or... A first conductive layer and a second conductive layer are disposed on the first surface and the second conductive layer is disposed on the second surface. Wherein, the surface of the first conductive layer away from the insulating layer constitutes at least a portion of the first surface of the heat dissipation substrate, and the first conductive layer includes the power side pad (31).

8. The power module according to claim 6, characterized in that, The number of RC-IGBTs is multiple, the number of power-side pads (31) is multiple, and the RC-IGBTs are spaced apart in the length direction. The multiple RC-IGBTs include at least one high-voltage power-side RC-IGBT (321) and at least one low-voltage power-side RC-IGBT (331). The high-voltage power-side RC-IGBT (321) and the low-voltage power-side RC-IGBT (331) are respectively disposed on different power-side pads (31).

9. The power module according to claim 8, characterized in that, The number of low-voltage power-side RC-IGBTs (331) is three, the number of high-voltage power-side RC-IGBTs is three, and the power-side pads (31) include: There are three low-voltage power side pads (33), and the three low-voltage power side pads (33) are spaced apart in the length direction; A high-voltage power side pad (32) is provided. The high-voltage power side pad (32) and three low-voltage power side pads (33) are spaced apart along the length direction. The two sides of the encapsulation resin (10) along the length direction are respectively the first side (11) and the second side (12). The low-voltage power side pad (33) is closer to the first side (11) along the length direction, and the high-voltage power side pad (32) is closer to the second side (12) along the length direction. The three low-voltage power side RC-IGBTs (331) are respectively disposed on the three low-voltage power side pads (33). The three high-voltage power side RC-IGBTs (321) are all disposed on one high-voltage power side pad (32). The three high-voltage power side RC-IGBTs are spaced apart along the length direction on the high-voltage power side pad (32).

10. The power module according to claim 9, characterized in that, Also includes: A drive-side frame (20), a portion of which is encapsulated by the encapsulating resin (10), the drive-side frame (20) includes a drive-side pad (21) and drive-side pins (24), the drive integrated circuit is disposed on the drive-side pad (21), and the drive integrated circuit is electrically connected to the drive-side pins (24), wherein the heat dissipation substrate (30) and the drive-side frame (20) are spaced apart in the width direction; or The PCB board is wrapped by the encapsulating resin (10), the PCB board has a drive-side pad, the power module further includes a drive-side pin, the drive-side pin is electrically connected to the PCB board, the drive integrated circuit is disposed on the drive-side pad, the drive integrated circuit is electrically connected to the drive-side pin, wherein the heat dissipation substrate (30) and the PCB board are spaced apart in the width direction.

11. The power module according to claim 10, characterized in that, The drive-side pad (21) includes: Low-voltage drive side pad (23), wherein there is one low-voltage drive side pad (23); Three high-voltage drive-side pads (22) are provided, and the three high-voltage drive-side pads (22) and one low-voltage drive-side pad (23) are spaced apart along the length direction. The encapsulation resin (10) is positioned on two sides along the length direction, namely a first side (11) and a second side (12). The low-voltage drive-side pad (23) is closer to the first side (11) along the length direction, and the high-voltage drive-side pad (22) is closer to the second side (12) along the length direction. The drive integrated circuit includes one low-voltage drive integrated circuit (231) and three high-voltage drive integrated circuits (221). One low-voltage drive integrated circuit (231) is disposed on one low-voltage drive-side pad (23), and one high-voltage drive integrated circuit (221) is disposed on one high-voltage drive-side pad (22). When there are multiple RC-IGBTs, and the multiple RC-IGBTs include multiple low-voltage power-side RC-IGBTs and multiple high-voltage power-side RC-IGBTs, one low-voltage drive integrated circuit (231) is electrically connected to multiple low-voltage power-side RC-IGBTs (331) respectively, and one high-voltage drive integrated circuit (221) is electrically connected to one high-voltage power-side RC-IGBT (321) respectively.

12. The power module according to claim 11, characterized in that, It also includes three bootstrap chips (251), all of which are disposed on the driver-side pin (24), wherein the driver-side pin (24) further includes: Three floating power supply voltage positive terminal pins (241), each of the floating power supply voltage positive terminal pins (241) extends in the width direction and is spaced apart from a corresponding high voltage drive side pad in the length direction, the floating power supply voltage positive terminal pins (241) have bootstrap chip pads (25), and three bootstrap chips (251) are respectively disposed on the bootstrap chip pads (25) of the three floating power supply voltage positive terminal pins; Three floating power supply voltage negative terminal pins (242), each of the floating power supply voltage negative terminal pins (242) is arranged to extend in the length direction and is arranged in the width direction on the side of the floating power supply voltage positive terminal pin (241) away from the adjacent high voltage drive side pad (22), and each of the RC-IGBTs is electrically connected to its respective floating power supply voltage negative terminal pin (242). Three chip power supply voltage pins (243) are provided, each of the chip power supply voltage pins (243) being spaced apart on the side of the high voltage drive side pad (22) away from the heat dissipation substrate (30) in the width direction. Each bootstrap chip (251) is electrically connected to one of the chip power supply voltage pins (243) adjacent to it, and each floating power supply voltage positive terminal pin (241) is electrically connected to one of the high voltage drive integrated circuits (221) adjacent to it.

13. The power module according to claim 11, characterized in that, Each of the high-voltage drive integrated circuits integrates a bootstrap chip, wherein the drive-side pin (24) further includes: Three floating power supply voltage positive terminal pins (241), each of the floating power supply voltage positive terminal pins (241) extending in the width direction and spaced apart from a corresponding high voltage drive side pad in the length direction; Three floating power supply voltage negative terminal pins (242), each of the RC-IGBTs is electrically connected to its corresponding floating power supply voltage negative terminal pin (242); three chip power supply voltage pins (243), each of the chip power supply voltage pins (243) is spaced apart on the side of the high voltage drive side pad (22) away from the heat dissipation substrate (30) in the width direction, each of the high voltage drive integrated circuits is electrically connected to its adjacent chip power supply voltage pin (243), and each floating power supply voltage positive terminal pin (241) is electrically connected to its adjacent high voltage drive integrated circuit (221).

14. The power module according to claim 1, characterized in that, Also includes: A power-side pin (34) is partially encapsulated by the encapsulating resin (10) and located on the side of the heat sink substrate (30) away from the driver integrated circuit (20) along the width direction. The power-side pin (34) is electrically connected to the RC-IGBT. The first side of the heat sink substrate (30) also has a plurality of jumper areas (37), each of the jumper areas (37) being located on the side of the RC-IGBT to which it is electrically connected away from the driver integrated circuit along the width direction. Each of the RC-IGBTs includes: Gate pad (35), the gate pad (35) being electrically connected to the driver integrated circuit, Emitter pad (36) is electrically connected to power side pin (34) via multiple pin electrical connection lines (262). Each pin electrical connection line (262) includes a first connection line (2621) and a second connection line (2622). The first connection line (2621) electrically connects the emitter pad (36) and the corresponding jumper area (37). The jumper area (37) is electrically connected to the corresponding power side pin (34) via the second connection line.

15. The power module according to claim 14, characterized in that, The first connecting line (2621) and the second connecting line (2622) connecting the same jumper area form an included angle α that satisfies the relationship: 100°≤α≤165°.

16. The power module according to claim 15, characterized in that, The length of the pin electrical connection line (262) is L5, and L5 satisfies the relationship: 13mm≤L5≤24mm.

17. The power module according to any one of claims 1 to 16, characterized in that, The RC-IGBT includes a termination structure, which adopts a lateral doping structure.

18. The power module according to claim 11, characterized in that, It also includes two support rods (38), which are respectively disposed adjacent to the first side (11) and the second side (12) and are both connected to the heat dissipation substrate (30). The support rods (38) are spaced apart from the adjacent power side pads (31). One of the low-voltage power side pads (33) adjacent to the first side (11) has a first long side extending along the width direction. The first long side is disposed between the drive side frame and the support rods (38). If the dimension of the first long side along the width direction is set as A, then 7mm≤A≤8.3mm.

19. An electronic device, characterized in that, Includes the power module (100) according to any one of claims 1-18.

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