Preheating ring structure and semiconductor device
By employing a double-layer preheating ring structure in semiconductor equipment, the gas is preheated simultaneously in the vertical direction, solving the problem of large temperature difference between the edge and center of the silicon wafer. This results in more uniform chemical reactions and higher product yield, while also reducing equipment space requirements.
Patent Information
- Application Number
- CN202422792171.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-15
- Publication Date
- 2025-11-18
- Estimated Expiration
- 2034-11-15
AI Technical Summary
Existing preheating rings cause a large temperature difference between the edge and center of the silicon wafer during semiconductor manufacturing, affecting the uniformity of the reaction within the silicon wafer.
The gas adopts a double-layer preheating ring structure, which preheats the gas in both the upper and lower directions before it enters the wafer surface. The gas flows through the gap between the first and second heating rings and is fixedly connected by a support member. The material can be silicon carbide or graphite, and the width and thickness can be adjusted to achieve more uniform gas preheating.
It significantly improves preheating efficiency and product uniformity, reduces chemical reaction inhomogeneity, reduces equipment size, and increases product yield.
Smart Images
Figure CN223566582U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The utility model belongs to semiconductor integrated circuit manufacturing equipment technical field, especially, it relates to a preheating ring structure and semiconductor equipment. BACKGROUND
[0002] In the semiconductor manufacturing process, epitaxial (EPI) technology is one of the key steps to manufacture high-quality semiconductor devices. In the EPI process, process gas is introduced into the reaction chamber to promote the chemical reaction on the wafer. Traditionally, these gases are supplied uniformly from the factory end, and the gas temperature is close to room temperature. However, when the gas just enters the reaction chamber, it will gradually warm up during the process of diffusing to the center of the silicon wafer due to the low temperature. This temperature gradient leads to inconsistent reaction rates at the edge and center of the wafer, which in turn affects the WIW (Within-Wafer) uniformity within the wafer, resulting in a large difference in film thickness between the edge and center of the wafer.
[0003] To solve this problem, an improved method is to add a preheating ring at the edge of the chamber. The preheating ring will be heated to a high temperature state by the light, so that the gas will flow through the preheating ring above after entering the chamber, and then contact the wafer to continue the reaction. In this way, the temperature difference between the edge and center of the wafer is greatly reduced after the preheating of the gas, thereby improving the difference in reaction rate between the edge and center of the wafer and improving the uniformity within the wafer.
[0004] Although the use of preheating ring improves the wafer uniformity to some extent, however, the preheating ring is located at the edge of the chamber, and its preheating effect is closely related to the width of the preheating ring. Due to the limited size of the chamber diameter, for some process conditions with high temperature consistency requirements, the preheating may not be sufficient, resulting in a large temperature difference between the edge and center of the wafer.
[0005] In summary, although the preheating ring plays a role in improving the wafer uniformity, it still faces many challenges and limitations in practical application.
[0006] It should be noted that the above introduction to the technical background is only to facilitate a clear and complete description of the technical solutions of the present application, and to facilitate the understanding of those skilled in the art. The above technical solutions cannot be considered as known to those skilled in the art merely because they are described in the background section of the present application. UTILITY MODEL CONTENT
[0007] In view of the above-mentioned shortcomings of the prior art, the purpose of the present utility model is to provide a preheating ring structure and semiconductor equipment to solve the problem of large temperature difference between the edge and center of the wafer caused by insufficient preheating of the preheating ring in the prior art.
[0008] To achieve the above object and other related objects, the utility model provides a preheating ring structure of semiconductor equipment, semiconductor equipment includes reaction cavity, pedestal, preheating ring and gas inlet, the pedestal sets up in the reaction cavity, for supporting wafer, preheating ring surrounds the outside edge of pedestal, gas inlet sets up in one side of reaction cavity, for along the first direction injection gas, preheating ring includes the first heat ring body and the second heat ring body of interval setting along the second direction, be provided with support between the first heat ring body and the second heat ring body to make the first heat ring body and the second heat ring body fixed connection, the second direction with the first direction intersection, to make the gas of gas inlet injection pass through the gap between the first heating ring and the second heating ring.
[0009] Optionally, the first heat ring body and the second heat ring body have the same material, and the material of the first heat ring body and the second heat ring body includes one of silicon carbide or graphite.
[0010] Optionally, the width of the first heat ring body and the second heat ring body in the first direction is 2cm-30cm.
[0011] Optionally, the width of the first heat ring body is equal to the width of the second heat ring body, or the width of the first heat ring body is greater than the width of the second heat ring body, or the width of the first heat ring body is less than the width of the second heat ring body.
[0012] Optionally, the thickness of the first heat ring body and the second heat ring body is 1mm-50mm.
[0013] Optionally, the spacing between the first heat ring body and the second heat ring body is 1cm-15cm.
[0014] Optionally, the support is a support column, and the number of support columns between the first heat ring body and the second heat ring body is 3-12, and the plurality of support columns are distributed in the two side regions outside the gas inlet.
[0015] Optionally, the support includes two support walls, and the two support walls are arranged in the two side regions outside the gas inlet.
[0016] Optionally, the first heat ring body located below the gas inlet is a complete ring, and the second heat ring body located above the gas inlet is one of a complete ring or a partial ring, when the second heat ring body is a partial ring, the second heat ring body is arranged on one side close to the gas inlet, and the second heat ring body covers an angle range of 30°-180°.
[0017] The utility model also provides a semiconductor equipment, and the semiconductor equipment includes the preheating ring structure of any one of the above schemes.
[0018] Optionally, the semiconductor device comprises heat light sources arranged on the upper and lower sides of the reaction cavity, and the heat light sources on the upper and lower sides are arranged towards the first and second heat ring bodies.
[0019] As described above, the preheating ring structure and the semiconductor device have the following beneficial effects:
[0020] The improved double-layer preheating ring structure allows the reaction gas to be preheated in the upper and lower directions before entering the wafer surface, and the double-sided preheating method can heat the gas more uniformly and quickly, and reduce the chemical reaction non-uniformity caused by uneven preheating.
[0021] The semiconductor device can be designed to have a smaller volume, and the space occupied by the device can be reduced. BRIEF DESCRIPTION OF DRAWINGS
[0022] The accompanying drawings included to provide a further understanding of the embodiments of the present application, constitute a part of the specification, illustrate embodiments of the present application, and together with the text description, serve to explain the principles of the present application. Obviously, the drawings in the following description are only some embodiments of the present application.
[0023] Figure 1 A front view structural schematic diagram of a semiconductor device comprising a preheating ring structure according to an embodiment of the present application is shown.
[0024] Figure 2 A top view structural schematic diagram of a semiconductor device comprising a preheating ring structure according to an embodiment of the present application is shown.
[0025] Figures 3-5 A structural schematic diagram of a preheating ring structure according to an embodiment of the present application is shown.
[0026] Figures 6-8 A width setting structural schematic diagram of a preheating ring structure according to an embodiment of the present application is shown.
[0027] Figure 9 A heat light source irradiation principle schematic diagram of a semiconductor device comprising a preheating ring structure according to an embodiment of the present application is shown.
[0028] ELEMENT NUMBER EXPLANATION
[0029] 101 reaction cavity
[0030] 102 base
[0031] 103 gas inlet
[0032] 104 Exhaust Port
[0033] 105 Thermal Light Source
[0034] 20 Preheating ring structure
[0035] 201 First thermal ring
[0036] 202 Second thermal ring
[0037] 203 Support Columns
[0038] 204 Support Wall Detailed Implementation
[0039] The following specific examples illustrate the implementation of this utility model. Those skilled in the art can easily understand other advantages and effects of this utility model from the content disclosed in this specification. This utility model can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of this utility model.
[0040] It should be emphasized that the term "including / comprises" as used herein refers to the presence of a feature, whole, step, or component, but does not exclude the presence or addition of one or more other features, wholes, steps, or components.
[0041] Features described and / or illustrated for one embodiment may be used in the same or similar manner in one or more other embodiments, combined with features in other embodiments, or substituted for features in other embodiments.
[0042] In the detailed description of the embodiments of this utility model, for ease of explanation, the cross-sectional views illustrating the device structure may be partially enlarged and not to the usual scale. Furthermore, the schematic diagrams are merely examples and should not limit the scope of protection of this utility model. In actual manufacturing, the three-dimensional spatial dimensions of length, width, and depth should be included.
[0043] For ease of description, spatial relation terms such as “below,” “under,” “lower than,” “below,” “above,” and “upper” may be used herein to describe the relationship between one element or feature shown in the accompanying drawings and other elements or features. It will be understood that these spatial relation terms are intended to include directions other than those depicted in the drawings for devices in use or operation. Furthermore, when a layer is referred to as being “between” two layers, it may be the only layer between the two layers, or there may be one or more layers in between.
[0044] In the context of the present application, a structure in which the first feature is "on" the second feature can include embodiments in which the first and second features are formed in direct contact, and can also include embodiments in which additional features are formed between the first and second features, such that the first and second features can not be in direct contact.
[0045] It should be noted that the diagrams provided in the embodiments of the present application only schematically illustrate the basic concepts of the present application, and only show the components related to the present application in the diagrams, rather than being drawn according to the number, shape and size of the components in actual implementation. The shapes, number and proportions of the components in actual implementation can be changed arbitrarily, and the layout of the components can be more complex.
[0046] As shown in Figures 1-9 , the present embodiment provides a preheating ring structure of a semiconductor device.
[0047] As shown in Figure 1 and Figure 2 , the semiconductor device includes a reaction chamber 101, a susceptor 102, a preheating ring, and a gas inlet 103. The susceptor 102 is arranged in the reaction chamber 101 and is used to support a wafer. The bottom of the susceptor 102 is connected to a rotating support shaft, which is used to realize the rotation and lifting of the susceptor 102. The gas inlet 103 is arranged on one side of the reaction chamber 101 and is used to inject gas in a first direction. The semiconductor device further includes an exhaust port 104, which is arranged on the other side of the reaction chamber 101 opposite the gas inlet 103. The positions of the gas inlet 103 and the exhaust port 104 can be arranged above the surface of the wafer to facilitate the transmission of the gas. The top and bottom of the reaction chamber 101 are both provided with heating light sources 105. The infrared light emitted by the heating light sources 105 penetrates into the reaction chamber 101 to provide heating energy in the form of thermal radiation. The semiconductor device can also be provided with a temperature sensor, which can be arranged on the top and / or bottom of the reaction chamber 101 to monitor the temperature of the top and / or bottom of the wafer. The preheating ring surrounds the outer edge of the susceptor 102 and is used to heat the gas injected from the gas inlet 103.
[0048] As shown in Figure 1 and Figures 3-8 , the preheating ring includes a first heating ring body 201 and a second heating ring body 202 arranged in a second direction. A support member is arranged between the first heating ring body 201 and the second heating ring body 202 to fixedly connect the first heating ring body 201 and the second heating ring body 202. The second direction intersects the first direction, so that the gas injected by the gas inlet 103 passes through the gap between the first heating ring and the second heating ring.
[0049] In one embodiment, the second direction is perpendicular to the first direction, i.e. the first thermal ring body 201 and the second thermal ring body 202 are arranged in parallel and spaced apart in a vertical direction, and the direction in which the gas inlet 103 injects the gas passes through the gap between the first thermal ring body 201 and the second thermal ring body 202, and is parallel to the first thermal ring body 201 and the second thermal ring body 202.
[0050] In one embodiment, the first thermal ring body 201 and the second thermal ring body 202 are made of the same material, and the material of the first thermal ring body 201 and the second thermal ring body 202 includes one of silicon carbide or graphite. Of course, the material of the first thermal ring body 201 and the second thermal ring body 202 can be other materials that can absorb infrared rays or other heating light to heat up, and is not limited to the examples listed here.
[0051] In one embodiment, as shown in Figure 3 , the width D of the first thermal ring body 201 and the second thermal ring body 202 in the first direction is 2cm-30cm.
[0052] The preheating temperature of the gas is positively correlated with the width of the first thermal ring body 201 and the width of the second thermal ring body 202, i.e. the greater the width of the first thermal ring body 201 and the width of the second thermal ring body 202, the higher the temperature of the gas preheating is increased. In one embodiment, the width of the first thermal ring body 201 and the width of the second thermal ring body 202 are equal, as shown in Figure 6 , for example, the width of the first thermal ring body 201 and the width of the second thermal ring body 202 can be 5cm, 10cm, 15cm, 20cm, etc., which can be set according to the required preheating temperature of the gas. In another embodiment, the width of the first thermal ring body 201 is greater than the width of the second thermal ring body 202, as shown in Figure 7 , for example, the width of the first thermal ring body 201 can be 10cm, and the width of the second thermal ring body 202 can be 5cm, or the width of the first thermal ring body 201 can be 20cm, and the width of the second thermal ring body 202 can be 10cm, etc., which can be set according to the required preheating temperature of the gas. In yet another embodiment, the width of the first thermal ring body 201 is less than the width of the second thermal ring body 202, as shown in Figure 8 , for example, the width of the first thermal ring body 201 can be 5cm, and the width of the second thermal ring body 202 can be 10cm, or the width of the first thermal ring body 201 can be 10cm, and the width of the second thermal ring body 202 can be 20cm, etc., which can be set according to the required preheating temperature of the gas. The width of the first thermal ring body 201 and the second thermal ring body 202 described above is only a preferred example, and is not limited to the examples listed here.
[0053] In one embodiment, the thickness of the first heating ring 201 and the second heating ring 202 is 1 mm to 50 mm. The thickness of the first heating ring 201 and the second heating ring 202 can be the same or different. For example, the thickness of the first heating ring 201 and the second heating ring 202 can both be 10 mm, 15 mm, 20 mm, etc.
[0054] In one embodiment, such as Figure 3 As shown, the distance H between the first heating ring 201 and the second heating ring 202 is 1cm to 15cm. For example, the distance H between the first heating ring 201 and the second heating ring 202 can be 3cm, 5cm, 10cm, etc.
[0055] In one embodiment, the first heating ring 201 located below the air inlet 103 is a complete ring, and the second heating ring 202 located above the air inlet 103 is a complete ring (e.g., ...). Figure 3 (or as shown in 4) or part of the ring (such as) Figure 5 One of the ones shown, such as Figure 5 As shown, when the second heating ring 202 is a partial ring, it is positioned near the air inlet 103. The angle range θ covered by the second heating ring 202 is 30° to 180°. For example, the angle range θ can be 60°, 90°, 120°, etc., and is not limited to the examples listed here. Setting the second heating ring 202 as a partial ring effectively reduces the material required for the heating ring while ensuring sufficient preheating of the gas, thus effectively reducing costs.
[0056] In one embodiment, the support member is a support column 203, such as... Figure 3 As shown, the number of support columns 203 between the first heating ring 201 and the second heating ring 202 is 3 to 12. Multiple support columns 203 are distributed on both sides outside the air inlet 103 to avoid the support columns 203 blocking the injected gas and causing uneven airflow.
[0057] In one embodiment, the support includes two support walls 204, such as Figure 4 As shown, two support walls 204 are respectively set on both sides outside the air inlet 103 to avoid the support walls 204 blocking the injected gas and causing uneven airflow.
[0058] The utility model provides an improved double -deck preheating ring structure 20, this double -deck preheheat ring design allows reaction gas before entering wafer surface, simultaneously in the up and down direction is preheated, this kind of double -sided preheating mode can more evenly and more quickly heat gas, reduce the chemical reaction non -uniformity caused by preheating uneven, since double -deck preheating ring can more evenly preheat reaction gas, therefore can significantly improve preheating efficiency, product uniformity and product yield.
[0059] As Figures 1-9 The utility model discloses a semiconductor equipment, and the semiconductor equipment includes the preheating ring structure 20 of the above -mentioned embodiment.
[0060] In one embodiment, the semiconductor equipment includes heat light source 105, heat light source 105 sets up in the up and down both sides of reaction cavity 101, and the heat light source 105 of up and down both sides is arranged to first heat ring body 201 and second heat ring body 202, as Figure 9 The utility model can effectively reduce the width of the preheating ring, so that the semiconductor equipment can be designed to be smaller in size, and the space occupied by the equipment is reduced.
[0061] As described above, the preheating ring structure and the semiconductor equipment have the following beneficial effects:
[0062] The utility model provides an improved double -deck preheating ring structure, this double -deck preheheat ring design allows reaction gas before entering wafer surface, simultaneously in the up and down direction is preheated, this kind of double -sided preheating mode can more evenly and more quickly heat gas, reduce the chemical reaction non -uniformity caused by preheating uneven, since double -deck preheating ring can more evenly preheat reaction gas, therefore can significantly improve preheating efficiency, product uniformity and product yield.
[0063] The utility model can effectively reduce the width of the preheating ring, so that the semiconductor equipment can be designed to be smaller in size, and the space occupied by the equipment is reduced.
[0064] Therefore, the utility model effectively overcomes the various shortcomings in the prior art and has high industrial utilization value.
[0065] The above-mentioned embodiments only exemplarily illustrate the principle and effect of the utility model, and are not used to limit the utility model. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the utility model. Therefore, all equivalent modifications or changes completed by those skilled in the art without departing from the spirit and technical thought disclosed by the utility model should be covered by the claims of the utility model.
Claims
1. A preheating ring structure of a semiconductor device, characterized in that: the semiconductor device comprises a reaction chamber, a susceptor, a preheating ring and a gas inlet, the susceptor is arranged in the reaction chamber for supporting a wafer, the preheating ring is arranged around the outer edge of the susceptor, and the gas inlet is arranged on one side of the reaction chamber for injecting gas in a first direction; the preheating ring comprises a first heating ring body and a second heating ring body arranged at intervals in a second direction, a support is arranged between the first heating ring body and the second heating ring body to fixedly connect the first heating ring body and the second heating ring body, and the second direction intersects the first direction so that the gas injected by the gas inlet passes through the gap between the first heating ring body and the second heating ring body.
2. The preheat ring structure for a semiconductor apparatus according to claim 1, wherein: The first heating ring body and the second heating ring body are made of the same material, and the material of the first heating ring body and the second heating ring body comprises one of silicon carbide or graphite.
3. The preheat ring structure for a semiconductor apparatus according to claim 1, wherein: The width of the first heating ring body and the second heating ring body in the first direction is 2cm-30cm.
4. The preheat ring structure for a semiconductor apparatus according to claim 3, wherein: The width of the first heating ring body is equal to the width of the second heating ring body, or the width of the first heating ring body is greater than the width of the second heating ring body, or the width of the first heating ring body is less than the width of the second heating ring body.
5. The preheat ring structure for a semiconductor apparatus according to claim 3, wherein: The distance between the first heating ring body and the second heating ring body is 1cm-15cm.
6. The preheat ring structure of a semiconductor apparatus according to claim 1, wherein: The thickness of the first heating ring body and the second heating ring body is 1mm-50mm.
7. The preheat ring structure of a semiconductor apparatus according to claim 1, wherein: The support is a support column, the number of support columns between the first heating ring body and the second heating ring body is 3-12, and multiple support columns are distributed in the two side regions outside the gas inlet.
8. The preheat ring structure of a semiconductor apparatus according to claim 1, wherein: The support comprises two support walls arranged in the two side regions outside the gas inlet.
9. The preheat ring structure of a semiconductor apparatus according to claim 1, wherein: The first heating ring body located below the gas inlet is a complete ring, the second heating ring body located above the gas inlet is one of a complete ring or a partial ring, when the second heating ring body is a partial ring, the second heating ring body is arranged on one side close to the gas inlet, and the second heating ring body covers an angle range of 30°-180°.
10. A semiconductor device, characterized by comprising: The semiconductor device comprises the preheating ring structure according to any one of claims 1-9.
11. The semiconductor device of claim 10, wherein: The semiconductor device comprises a heat source, and the heat source is arranged on the upper and lower sides of the reaction chamber, and the heat sources on the upper and lower sides are arranged towards the first heating ring body and the second heating ring body.