Device for preparing thin film material through thermal evaporation and electron beam composite epitaxial deposition

Abstract

The utility model discloses a device for preparing a thin film material by thermal evaporation and electron beam composite epitaxial deposition, which comprises a rack main body, a vacuum cavity and a vacuum pump, the vacuum pump is used for vacuum operation in the vacuum cavity, a cover body is arranged on the vacuum cavity, and the device also comprises a variable temperature sample table arranged in the vacuum cavity, the electron beam evaporation structure is mounted, and a deposition preparation source material is placed; the resistance heat evaporation source is arranged in the vacuum cavity and located under the variable-temperature sample table, the electron beam evaporation structure comprises a sample support, a substrate embedded in the upper surface of the sample support and a tungsten filament clamping plate used for installing a plurality of groups of tungsten filaments, and the tungsten filaments emit electrons to bombard the sample support to heat and prepare a thin film material. The device can support two film material preparation methods of thermal evaporation and electron beam evaporation at the same time, so that the purpose of multifunctional deposition epitaxy is achieved, and material preparation under different process requirements can be met.

Description

Technical Field

[0001] This utility model relates to the field of materials preparation technology, specifically to an apparatus for preparing thin film materials by thermal evaporation and electron beam composite epitaxial deposition. Background Technology

[0002] In the semiconductor and optoelectronic industries, material growth technology is a crucial link. Epitaxial deposition systems are widely used in the preparation of various two-dimensional materials, including low-dimensional materials, semiconductor materials, quantum materials, nanomaterials, optoelectronic materials, magnetic materials, and energy materials. Epitaxy refers to the orderly growth of another layer of crystalline material on a crystalline substrate, while deposition uses physical or chemical gaseous reactions to deposit crystalline materials on a substrate. These technologies make it possible to precisely construct new material layers on crystalline substrates.

[0003] Existing epitaxial deposition systems typically employ a single technique, such as thermal evaporation or molecular beam epitaxy (MBE), to grow thin film materials. Thermal evaporation involves heating a solid source material to evaporate it and deposit it onto a substrate to form a thin film. In contrast, molecular beam epitaxy deposits atoms or molecules in the form of a beam onto the substrate surface in an ultra-high vacuum environment. Each method has its advantages and disadvantages: thermal evaporation has lower costs but lower control precision; while molecular beam epitaxy can achieve high-precision control, it is complex and expensive.

[0004] In addition, existing epitaxial deposition systems still have some shortcomings in use: First, single thermal evaporation or molecular beam epitaxy technologies are difficult to meet the needs of different application scenarios at the same time, especially when a balance needs to be struck between high precision and low cost; second, traditional thermal evaporation devices lack effective real-time monitoring methods, which may lead to uncontrollable factors during the growth process, affecting the quality of the final product; third, for some special materials, the growth conditions are very harsh, and existing variable temperature sample stages may not be able to provide sufficient temperature control accuracy.

[0005] Therefore, this application proposes an apparatus for preparing thin film materials by thermal evaporation and electron beam composite epitaxial deposition to solve the above-mentioned technical problems. Utility Model Content

[0006] The main objective of this invention is to provide a device that can simultaneously support both thermal evaporation and electron beam evaporation methods for preparing thin film materials, thereby achieving multifunctional deposition epitaxy and meeting the needs of different process requirements for preparing thin film materials through thermal evaporation and electron beam composite epitaxial deposition.

[0007] To address the aforementioned technical problems, this utility model provides an apparatus for preparing thin film materials using thermal evaporation and electron beam composite epitaxial deposition, comprising a frame body, a vacuum chamber, and a vacuum pump. Both the vacuum chamber and the vacuum pump are mounted on the frame body, and the vacuum pump is connected to the vacuum chamber via a bellows for vacuuming operations within the vacuum chamber. The vacuum chamber is equipped with a cover. The apparatus further includes:

[0008] The variable-temperature sample stage, located inside the vacuum chamber, is used to mount the electron beam evaporation structure and place the deposition source material.

[0009] The resistance heat evaporation source is located inside the vacuum chamber, directly below the variable temperature sample stage.

[0010] Furthermore, the electron beam evaporation structure includes a sample holder disposed within a vacuum chamber, a substrate embedded on the upper surface of the sample holder, and a tungsten wire clamp disposed at the bottom of the sample holder. Multiple sets of tungsten wires are disposed between the tungsten wire clamp and the sample holder. Under high-voltage driving conditions, the tungsten wires emit electrons to bombard the sample holder and heat it to prepare a thin film material.

[0011] Furthermore, the side wall of the vacuum chamber is provided with an external instrument flange interface for mounting the film thickness gauge body, an evaporation source flange interface for mounting the resistance heat evaporation source, and a HEED flange interface. The external instrument flange interface is used to adapt and install material measuring instruments.

[0012] Furthermore, the material measuring instrument is configured as a film thickness gauge body, which is connected to the substrate via a probe for monitoring the growth of thin film materials.

[0013] Furthermore, the side wall of the vacuum chamber is provided with an ionization gauge flange interface for installing an ionization gauge, a gate valve flange interface for installing a gate valve, a vacuum electrode interface for installing a vacuum electrode, an external gas flange interface, and a pump body flange interface for connecting to the vacuum pump bellows.

[0014] Furthermore, an observation window flange interface is provided on the side wall of the vacuum chamber for observing the preparation of thin film materials inside the vacuum chamber.

[0015] Furthermore, a heating stage is provided on the cover, and the heating stage is connected to the variable temperature sample stage via a heating wire for adjusting the temperature of the variable temperature sample stage.

[0016] Furthermore, a magnetically coupled linear actuator is provided on the cover to drive the variable-temperature sample stage to move up and down inside the vacuum chamber.

[0017] The beneficial effects of this utility model are reflected in:

[0018] 1. This utility model, by setting a variable temperature sample stage and a resistance thermal evaporation source in a vacuum chamber and combining them with an electron beam evaporation structure, can simultaneously support two thin film material preparation methods: thermal evaporation and electron beam evaporation, thereby achieving the purpose of multifunctional deposition epitaxy and meeting the material preparation requirements under different processes.

[0019] 2. By configuring the film thickness gauge body and connecting its probe to the substrate, this utility model can monitor the film growth process in real time, thereby accurately controlling the film thickness during the film material preparation process and improving the consistency and controllability of the quality of the prepared film material.

[0020] 3. By setting a heating stage on the cover and connecting it to a variable-temperature sample stage, this utility model can achieve precise control of the sample stage temperature, thereby optimizing material deposition conditions and improving the quality and uniformity of thin film materials.

[0021] 4. This invention introduces a magnetically coupled linear actuator to drive the variable-temperature sample stage to move up and down, which can conveniently adjust the sample position while maintaining an ultra-high vacuum environment. The position can be adjusted according to the actual use environment during the preparation of two thin film materials, thermal evaporation and electron beam evaporation, increasing experimental flexibility and thus improving work efficiency.

[0022] 5. By equipping the device with an adjustable venting valve and a corresponding gas path system, this utility model can quickly and safely complete the transition from a high vacuum state to an atmospheric pressure state, thereby reducing equipment recovery time, accelerating the experimental cycle, and significantly improving the overall ease of use and safety. Attached Figure Description

[0023] The accompanying drawings, which form part of this application, are used to provide a further understanding of the present invention. The illustrative embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute an undue limitation of the present invention. In the drawings:

[0024] Figure 1 This is a three-dimensional schematic diagram of the overall structure of the device of this utility model. Figure 1 ;

[0025] Figure 2 This is a three-dimensional schematic diagram of the overall structure of the device of this utility model. Figure 2 ;

[0026] Figure 3 This is a three-dimensional schematic diagram of the overall external structure of the vacuum cavity of this utility model;

[0027] Figure 4 This is a three-dimensional schematic diagram of the external structure of the vacuum cavity in the uncovered state of this utility model;

[0028] Figure 5This is a three-dimensional schematic diagram of the installation structure of the variable temperature sample stage of this utility model;

[0029] Figure 6 This is a schematic plan view of the internal structure of the vacuum cavity of this utility model.

[0030] In the picture:

[0031] 1. Main frame; 2. Vacuum chamber; 3. Vacuum pump; 4. Cover; 5. Film thickness gauge main body; 6. Resistance heating evaporation source;

[0032] 201. Ionization gauge flange interface; 202. Gate valve flange interface; 203. External instrument flange interface; 204. Vacuum electrode interface; 205. External gas flange interface; 206. Observation window flange; 207. Pump body flange interface; 208. Evaporation source flange interface; 209. HEED flange interface;

[0033] 401. Magnetic coupling linear actuator; 402. Heating stage; 403. Variable temperature sample stage; 404. Electron beam evaporation structure; 4041. Substrate; 4042. Sample holder; 4043. Tungsten wire clamp. Detailed Implementation

[0034] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only a part of the embodiments of the present utility model, and not all of them. Unless otherwise specified, the embodiments and features in the embodiments of this application can be combined with each other. Based on the embodiments of the present utility model, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present utility model.

[0035] For details in the embodiments, please refer to Figures 1 to 6 .

[0036] like Figure 1 and Figure 2 As shown, this utility model provides an apparatus for preparing thin film materials by combined thermal evaporation and electron beam epitaxial deposition, which is used for epitaxial deposition of thin film growth and preparation, and has the combined functions of resistance thermal evaporation and electron beam evaporation. It includes a frame body 1, a vacuum chamber 2 and a vacuum pump 3. The vacuum chamber 2 and the vacuum pump 3 are both mounted on the frame body 1, and the vacuum pump 3 is connected to the vacuum chamber 2 through a bellows for vacuuming operation inside the vacuum chamber 2. A cover 4 is provided on the vacuum chamber 2.

[0037] In practical use, the vacuum pump 3 controls the vacuum chamber 2 to create a vacuum environment for epitaxial deposition of thin film materials.

[0038] Further reference Figure 6 The device also includes:

[0039] The variable-temperature sample stage 403 is located inside the vacuum chamber 2 and is used to install the electron beam evaporation structure 404 and place the deposition preparation source material.

[0040] The resistance heat evaporation source 6 is set inside the vacuum chamber 2, and is located directly below the variable temperature sample stage 403.

[0041] At this time, a variable temperature sample stage 403 and a resistance thermal evaporation source 6 are set in the vacuum chamber 2, and combined with an electron beam evaporation structure 404, which can simultaneously support two thin film material preparation methods: thermal evaporation and electron beam evaporation, thereby achieving the purpose of multifunctional deposition epitaxy and meeting the material preparation requirements under different processes.

[0042] Specifically, such as Figure 5 As shown, the electron beam evaporation structure 404 includes a sample holder 4042 disposed in the vacuum chamber 2, a substrate 4041 embedded on the upper surface of the sample holder 4042, and a tungsten wire clamp 4043 disposed at the bottom of the sample holder 4042. Multiple sets of tungsten wires are disposed between the tungsten wire clamp 4043 and the sample holder 4042.

[0043] In practical use, the electron beam evaporation structure 404 achieves the deposition of thin film material on the substrate 4041 based on electron bombardment. The resistance heat evaporation source 6 heats and evaporates the source material target by heating the Joule heat generated by the heating resistance wire, thereby achieving physical deposition on the substrate 4041.

[0044] It should be noted that this application employs an electron bombardment evaporation method, where a tungsten filament emits electrons to bombard the sample holder 4042 under high pressure to prepare a thin film material.

[0045] In one specific embodiment, such as Figure 3 and Figure 4 As shown, the side wall of the vacuum chamber 2 is provided with an external instrument flange interface 203 for mounting the film thickness gauge body 5, an evaporation source flange interface 208 for mounting the resistance heat evaporation source 6, and a HEED flange interface 209. The external instrument flange interface 203 is used to adapt and install material measuring instruments, such as vacuum gauges and film thickness gauges.

[0046] In a further implementation, refer to Figure 6The material measuring instrument is set as the film thickness gauge body 5. At this time, the film thickness gauge body 5 is connected to the substrate 4041 through the probe for monitoring the growth of thin film materials. By configuring the film thickness gauge body 5 and connecting its probe to the substrate 4041, the film growth process can be monitored in real time, thereby accurately controlling the film thickness during the preparation of thin film materials and improving the consistency and controllability of the quality of the prepared thin film materials.

[0047] In one specific embodiment, such as Figure 3 and Figure 4 As shown, the side wall of the vacuum chamber 2 is provided with an ionization gauge flange interface 201 for installing an ionization gauge, a gate valve flange interface 202 for installing a gate valve, a vacuum electrode interface 204 for installing a vacuum electrode, an external gas flange interface 205, and a pump body flange interface 207 for connecting to the bellows of the vacuum pump 3.

[0048] In a further embodiment, the device is also equipped with an adjustable venting valve and a corresponding gas path system based on the gate valve flange interface 202, the external gas flange interface 205, and the pump body flange interface 207. This enables the device to quickly and safely complete the transition from a high vacuum state to an atmospheric pressure state, thereby reducing equipment recovery time and accelerating the experimental cycle, thus significantly improving the overall ease of use and safety.

[0049] It can be further explained at this point that the flange interface can refer to the same structure of the existing technology (a vacuum acquisition and measurement device with application number CN202323139699.3). However, the difference from the existing technology lies in the specific structure of the vacuum chamber 2, and the specific technical effects are also different. This application can achieve the electron beam evaporation effect that the existing technology cannot achieve. Furthermore, the existing technology cannot achieve the combined preparation effect of thermal evaporation and electron beam preparation of thin film materials.

[0050] In addition, an observation window flange interface 206 is provided on the side wall of the vacuum chamber 2, which can be used to observe the preparation of thin film materials inside the vacuum chamber 2.

[0051] In one specific embodiment, such as Figure 5 As shown, a heating stage 402 is provided on the cover 4. The heating stage 402 is connected to the variable temperature sample stage 403 through a heating wire for adjusting the temperature of the variable temperature sample stage 403. By setting the heating stage 402 on the cover 4 and connecting it to the variable temperature sample stage 403, precise control of the sample stage temperature can be achieved, thereby optimizing the material deposition conditions and improving the quality and uniformity of the thin film material.

[0052] In one specific embodiment, such as Figure 3As shown, a magnetically coupled linear actuator 401 is provided on the cover 4 to drive the variable-temperature sample stage 403 to move up and down inside the vacuum chamber 2. By introducing the magnetically coupled linear actuator 401 to drive the variable-temperature sample stage 403 to move up and down, the sample position can be easily adjusted while maintaining an ultra-high vacuum environment. The position can be adjusted according to the actual use environment during the preparation of two thin film materials, thermal evaporation and electron beam evaporation, increasing experimental flexibility and thus improving work efficiency.

[0053] The above description is only a preferred embodiment of the present utility model and is not intended to limit the present utility model. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present utility model should be included within the protection scope of the present utility model.

[0054] Furthermore, it should be noted that if any directional indication (such as up, down, left, right, front, back, etc.) is involved in the embodiments of this utility model, the directional indication is only used to explain the relative positional relationship and movement of each component in a specific posture. If the specific posture changes, the directional indication will also change accordingly.

[0055] Furthermore, if the embodiments of this utility model involve descriptions such as "first" or "second," these descriptions are for descriptive purposes only and should not be construed as indicating or implying their relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined with "first" or "second" may explicitly or implicitly include at least one of those features. Additionally, the meaning of "and / or" throughout the text includes three parallel solutions; for example, "A and / or B" includes solution A, solution B, or a solution where both A and B are satisfied simultaneously. Furthermore, in the embodiments of this utility model, "multiple" refers to two or more. Moreover, the technical solutions of the various embodiments can be combined with each other, but this must be based on the ability of those skilled in the art to implement them. When the combination of technical solutions is contradictory or impossible to implement, it should be considered that such a combination of technical solutions does not exist and is not within the scope of protection claimed by this utility model.

Claims

1. An apparatus for preparing thin film materials by thermal evaporation and electron beam composite epitaxial deposition, comprising a frame body (1), a vacuum chamber (2), and a vacuum pump (3), wherein the vacuum chamber (2) and the vacuum pump (3) are both mounted on the frame body (1), and the vacuum pump (3) is connected to the vacuum chamber (2) via a bellows for vacuuming operations inside the vacuum chamber (2), characterized in that, The vacuum cavity (2) is provided with a cover (4), and the device further includes: A variable-temperature sample stage (403) is set inside the vacuum chamber (2) for mounting the electron beam evaporation structure (404) and placing the deposition preparation source material; A resistance heat evaporation source (6) is set inside the vacuum chamber (2), and the resistance heat evaporation source (6) is located directly below the variable temperature sample stage (403).

2. The apparatus for preparing thin film materials by thermal evaporation and electron beam composite epitaxial deposition as described in claim 1, characterized in that, The electron beam evaporation structure (404) includes a sample holder (4042) disposed in a vacuum chamber (2), a substrate (4041) embedded on the upper surface of the sample holder (4042), and a tungsten wire clamp (4043) disposed at the bottom of the sample holder (4042). Multiple sets of tungsten wires are disposed between the tungsten wire clamp (4043) and the sample holder (4042). Under high-voltage driving conditions, the tungsten filament emits electrons that bombard the sample holder (4042) to heat and prepare thin film materials.

3. The apparatus for preparing thin film materials by thermal evaporation and electron beam composite epitaxial deposition as described in claim 2, characterized in that, The vacuum chamber (2) has an external instrument flange interface (203) for mounting the film thickness gauge body (5), an evaporation source flange interface (208) for mounting the resistance heat evaporation source (6), and a HEED flange interface (209) on its side wall. The external instrument flange interface (203) is used to adapt and install material measuring instruments.

4. The apparatus for preparing thin film materials by thermal evaporation and electron beam composite epitaxial deposition as described in claim 3, characterized in that, The material measuring instrument is set as a film thickness gauge body (5), which is connected to the substrate (4041) through a probe and is used for monitoring the growth of thin film materials.

5. The apparatus for preparing thin film materials by thermal evaporation and electron beam composite epitaxial deposition as described in claim 1, characterized in that, The side wall of the vacuum chamber (2) is provided with an ionization gauge flange interface (201) for installing an ionization gauge, a gate valve flange interface (202) for installing a gate valve, a vacuum electrode interface (204) for installing a vacuum electrode, an external gas flange interface (205), and a pump body flange interface (207) for connecting to the bellows of the vacuum pump (3).

6. The apparatus for preparing thin film materials by thermal evaporation and electron beam composite epitaxial deposition as described in claim 1, characterized in that, The vacuum chamber (2) is provided with an observation window flange interface (206) on its side wall for observing the preparation of thin film materials inside the vacuum chamber (2).

7. The apparatus for preparing thin film materials by thermal evaporation and electron beam composite epitaxial deposition as described in claim 1, characterized in that, A heating stage (402) is provided on the cover (4). The heating stage (402) is connected to the variable temperature sample stage (403) through a heating wire and is used for temperature adjustment of the variable temperature sample stage (403).

8. The apparatus for preparing thin film materials by thermal evaporation and electron beam composite epitaxial deposition as described in claim 1, characterized in that, The cover (4) is provided with a magnetically coupled linear actuator (401) for driving the variable temperature sample stage (403) to move up and down inside the vacuum chamber (2).

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