Wafer position correction device

Abstract

The utility model discloses a wafer position correcting device, which is applied to thermal annealing equipment, the thermal annealing equipment comprises a reaction cavity, an edge ring body, an adjusting part and a supporting part, the edge ring body comprises a supporting part and an adjusting part, the supporting part is close to the inner ring wall surface of the edge ring body, and the adjusting part is close to the inner ring wall surface of the edge ring body; the height of the supporting part in the direction from the inner ring to the outer ring of the edge ring body is not changed; the adjusting part is close to the outer ring wall surface of the edge ring body, and the height of the adjusting part is gradually increased in the direction from the inner ring to the outer ring of the edge ring body; the vibration part is arranged close to the edge ring body, and the vibration part is used for driving a wafer on the edge ring body to vibrate; when a wafer is placed on the edge ring body and the edge of the wafer abuts against the adjusting part, the vibration piece drives the wafer to vibrate and vibrates the wafer to the supporting part. According to the utility model, the contact area difference between the edges of the wafer in different directions and the edge ring can be reduced, so that the edge deviation condition is avoided.

Description

TECHNICAL FIELD

[0001] The utility model relates to the fast thermal annealing process device in semiconductor wafer production equipment, especially relates to a wafer position correction device. BACKGROUND

[0002] The fast thermal annealing process equipment plays a vital role in the semiconductor wafer production process. The process is mainly divided into annealing and long film process, wherein the annealing process is to heat the wafer by using different heating bulbs to achieve rapid and uniform heating. This process is very important for wafers after ion implantation, because it can reduce the resistance of the wafer and prevent ion diffusion, thereby optimizing the device performance.

[0003] However, in the actual production process, the heat conduction rate of the wafer edge and the edge ring contact part is faster, which leads to the wafer edge heat dissipation fast, the temperature is low, so that the effect after annealing is inconsistent with other areas of the wafer. In addition, the slight deviation of the wafer placement position will cause the area of the wafer edge in different directions and the edge ring contact area to be different, thereby causing the so-called "edge deviation" phenomenon. This edge deviation phenomenon will seriously affect the annealing effect of the wafer, resulting in a decrease in product yield.

[0004] Therefore, it is necessary to provide a wafer position correction device to solve the placement problem of the wafer in the fast thermal annealing process and reduce the inconsistent annealing effect and edge deviation phenomenon caused by the position deviation. SUMMARY

[0005] The utility model aims at providing a wafer position correction device to reduce the contact area difference of the wafer edge in different directions and the edge ring, and to avoid the edge deviation situation.

[0006] To achieve the above-mentioned purpose, the technical scheme of the utility model is as follows:

[0007] A wafer position correction device is applied to a thermal annealing equipment, and the thermal annealing equipment includes a reaction cavity, which comprises:

[0008] The edge ring body includes a support part and an adjustment part. The support part is close to the inner ring wall surface of the edge ring body, and the height of the support part along the inner ring to the outer ring direction of the edge ring body is constant. The adjustment part is close to the outer ring wall surface of the edge ring body, and the height of the adjustment part along the inner ring to the outer ring direction of the edge ring body gradually increases.

[0009] A vibration member (2) is arranged below the center of the edge ring body (1) to drive the wafer on the edge ring body (1) to vibrate by controlling the airflow, so that the wafer and the edge ring body (1) are well matched.

[0010] The utility model provides a kind of wafer position correction device's beneficial effects: vibration piece arranged at the bottom of edge ring body can drive wafer to generate vibration on adjusting part, and vibration can help wafer to slide on edge ring body, so as to realize the fine adjustment of position, and by controlling airflow to further affect the vibration of wafer, the most gentle way can be used to realize fine adjustment.

[0011] Further, the adjusting part includes a plurality of slope sections, and the plurality of slope sections gradually decrease in slope from the inner ring to the outer ring of the edge ring body.

[0012] Further, the adjusting part includes a first slope section, a second slope section and a third slope section, and the first slope section, the second slope section and the third slope section are sequentially distributed and gradually decrease in slope from the inner ring to the outer ring of the edge ring body.

[0013] Further, the first slope section has an angle of 65° to 85° with the horizontal direction, the second slope section has an angle of 40° to 60° with the horizontal direction, and the third slope section has an angle of 15° to 35° with the horizontal direction.

[0014] Further, the vibration piece includes:

[0015] A jet pipe is arranged near the bottom of the inner ring of the edge ring body, and the jet pipe has a jet portion that sprays air towards the wafer on the edge ring body.

[0016] A support seat is connected to the jet pipe, and the support seat is used to support the jet pipe.

[0017] Further, the jet pipe circulates a pulse airflow, and the pulse airflow is a positive pressure airflow.

[0018] Further, the side of the edge ring body away from the support surface of the support part is provided with a heating piece, and the heating piece is used to heat the temperature of the edge ring body.

[0019] Further, the heating piece includes:

[0020] A heating coil is arranged inside the edge ring body away from the support surface of the support part.

[0021] A heating power supply electrically connected to the heating coil, the heating power supply being configured to supply power to the heating coil.

[0022] Further, the heating member further comprises a temperature sensor disposed in the edge ring body and electrically connected to the heating power supply, the temperature sensor being configured to detect the temperature of the edge ring body.

[0023] Further, a mechanical arm is disposed in the reaction cavity, the mechanical arm having a driving end disposed close to the adjusting portion, the driving end being configured to drive the wafer of the edge ring body to move onto the supporting portion. BRIEF DESCRIPTION OF DRAWINGS

[0024] Figure 1 FIG. 1 is a structural schematic diagram of an edge ring body according to an embodiment of the present application;

[0025] Figure 2 FIG. 2 is a structural schematic diagram of a wafer position correction device according to an embodiment of the present application;

[0026] Figure 3 FIG. 3 is a sectional view of the edge ring body according to an embodiment of the present application;

[0027] Figure 4 FIG. 4 is a structural schematic diagram of a heating member according to an embodiment of the present application;

[0028] Figure 5 FIG. 5 is a structural schematic diagram of a mechanical arm according to an embodiment of the present application.

[0029] FIG. 1 is a structural schematic diagram of an edge ring body according to an embodiment of the present application; FIG. 2 is a structural schematic diagram of a wafer position correction device according to an embodiment of the present application; FIG. 3 is a sectional view of the edge ring body according to an embodiment of the present application; FIG. 4 is a structural schematic diagram of a heating member according to an embodiment of the present application; FIG. 5 is a structural schematic diagram of a mechanical arm according to an embodiment of the present application; and FIG. 6 is a structural schematic diagram of a wafer position correction device according to another embodiment of the present application. DETAILED DESCRIPTION

[0030] In order to make the purpose, technical scheme and advantages of the embodiments of the present application clearer, the technical scheme of the embodiments of the present application will be described clearly and completely below. Obviously, the described embodiments are some embodiments but not all of the present application. Based on the embodiments of the present application, all other embodiments obtained by those skilled in the art without creative work fall within the scope of the present application. Unless otherwise defined, the technical terms or scientific terms used herein should be understood as the common meanings by those skilled in the art. The similar words such as "comprise" used herein mean that the elements or objects before the words cover the elements or objects listed after the words and their equivalents, and do not exclude other elements or objects.

[0031] The embodiments of the present application will be described below in conjunction with the accompanying drawings. Figure 1 - The accompanying drawings Figure 5 The specific embodiments of the present application will be described in further detail.

[0032] Reference Figures 1-3 The wafer position correction device mainly applies to a rapid thermal annealing equipment, and the rapid thermal annealing equipment comprises a reaction cavity for reaction, and the wafer position correction device is arranged in the reaction cavity.

[0033] The edge ring body 1 comprises a support part 11 located at the inner ring side and an adjusting part 12 located at the outer ring side. The support part 11 is adjacent to the inner ring wall surface of the edge ring body 1, and the height of the support part 11 remains unchanged along the direction from the inner ring to the outer ring. The adjusting part 12 is adjacent to the outer ring wall surface of the edge ring body 1, and the height of the adjusting part 12 gradually increases from the inner ring to the outer ring. The vibration part 2 is arranged at the bottom central region of the edge ring body 1, and is specially used for driving the wafer 5 to vibrate on the edge ring body 1. When the wafer 5 is placed on the edge ring and the edge of the wafer 5 abuts against the adjusting part 12, starting the vibration part 2 can excite the wafer 5 to vibrate, so that the wafer 5 finally slides onto the support part 11.

[0034] In the implementation process, the wafer 5 can effectively slide on the edge ring body 1 through vibration, so as to realize the fine adjustment of the position, and the vibration of the wafer can be controlled through the air flow, so that the fine adjustment can be realized in the most gentle way. The design ensures that the position of the wafer on the edge ring is adjusted to the support part 11, ensures that the edge of the wafer is consistent with the contact area direction of the edge ring, reduces the problem of uneven heat conduction caused by the difference in contact area, thereby improving the annealing effect of the wafer and avoiding the edge deviation phenomenon. The support part 11 can also drive the wafer to rotate at high speed in the rapid thermal annealing process, prevent the wafer from flying out of the edge ring due to centrifugal force, and ensure safety and stability. At the same time, the support part 11 can also drive the wafer to rotate at high speed in the rapid thermal annealing process, prevent the wafer from flying out of the edge ring body 1.

[0035] In some other embodiments of the present application, the adjusting part 12 includes a plurality of slope sections, and the slope of the plurality of slope sections gradually decreases from the inner ring to the outer ring of the edge ring body 1. Specifically, the adjusting part 12 includes a first slope section 121, a second slope section 122 and a third slope section 123, and the slope of the first slope section 121, the second slope section 122 and the third slope section 123 gradually decreases from the inner ring to the outer ring of the edge ring body 1. By being divided into a plurality of slope sections, and the slope of the slope section gradually becoming steeper from the outer ring to the inner ring, the wafer can be finally slid onto the support part 11 on the horizontal plane, so as to control the position of the wafer within a certain range, so that the edge part of the wafer at any position does not have a large contact area with the edge ring body 1, and the uniform contact of the wafer in different directions is ensured, and the uniformity of heat conduction is improved.

[0036] In some other embodiments of the present application, the design of the above embodiments can also be optimized through specific slope angle setting, for example, the included angle between the first slope section 121 and the horizontal plane is 65°-85°, and the preferred angle is 75°; the included angle between the second slope section 122 and the horizontal plane is 40°-60°, and the preferred angle is 50°; and the included angle between the third slope section 123 and the horizontal plane is 15°-35°, and the preferred angle is 25°. These angle designs are not fixed and are not limited herein. In actual operation, they can be adjusted according to specific needs to achieve the best sliding effect and positioning accuracy.

[0037] In some other embodiments of the utility model, the vibrating member 2 includes a jet pipe 21 and a support base 22, the jet pipe 21 has multiple, multiple jet pipes 21 have a jet part, the jet pipe 21 is close to the inner ring bottom of the edge ring body 1 and is arranged, and the jet part is towards the wafer on the edge ring body 1 and sprays. The jet pipe 21 is installed on the support base 22, and the support base 22 is used to support the jet pipe 21. Specifically, the jet pipe 21 has pulse airflow, and the pulse airflow is positive pressure airflow. Multiple jet pipes 21 that can provide pulse airflow are installed at the lower end of the wafer, and the pulse airflow is inert gas in normal process flow, for example, N. The pulse airflow is positive pressure airflow provided by a gas supply device. Since the surface material of the edge ring body 1 is silicon carbide, the wafer is not easy to slide to the platform position by gravity, and the pulse airflow sprayed by the installed jet pipe 21 makes the wafer above vibrate slightly, thereby helping the wafer to slide from the adjusting part 12 position of the edge ring body 1 to the support part 11 area.

[0038] Referring to Figure 4 In some other embodiments of the utility model, the side of the edge ring body 1 away from the support surface of the support part 11 is provided with a heating member 3, and the heating member 3 is used to heat the temperature of the edge ring body 1. When the wafer is processed by rapid thermal annealing, the edge ring body 1 reaches the temperature close to the wafer, reduces the temperature difference between the edge ring body 1 and the wafer, and thereby reduces the edge deviation effect caused by the temperature difference between the wafer and the edge ring.

[0039] In some other embodiments of the utility model, the heating member 3 includes a heating coil 31 and a heating power supply 32, the heating coil 31 is arranged inside the support surface of the edge ring body 1 away from the support part 11, and the heating power supply 32 is electrically connected with the heating coil 31. The heating power supply 32 is used to power the heating coil 31. The heating coil 31 generates an electromagnetic field through alternating current, when the current penetrates into the coil, eddy current is generated inside the material, and the eddy current is converted into heat energy due to the resistance effect, thereby realizing the rapid heating of the material. The induction heating mode does not directly contact the flame or other heating elements, and the oxidation and scrap rate of parts are reduced. In some other embodiments of the utility model, the heating member 3 further includes a temperature sensor 33 arranged in the edge ring body 1 and electrically connected with the heating power supply 32, and the temperature sensor 33 is used to detect the temperature of the edge ring body 1.

[0040] Referring to Figure 5In some other embodiments of the present application, the wafer position correction device further comprises a mechanical arm 4, the mechanical arm 4 is arranged in the reaction cavity, the mechanical arm 4 has a driving end 41, the driving end 41 is arranged close to the adjusting part 12, and the driving end 41 is used for driving the wafer of the edge ring body 1 to move to the support part 11. The mechanical arm 4 is a telescopic driving mechanical arm 4, and the telescopic mechanical arm 4 that can push the wafer is additionally arranged on the inner wall of the reaction cavity. When the wafer does not slide in the adjusting part 12 area of the edge ring, the telescopic mechanical arm 4 can push the wafer to the platform of the support part 11.

[0041] In conclusion, the wafer position correction device of the present application effectively solves the inconsistent annealing effect and the edge deviation phenomenon caused by the position deviation of the wafer. The edge ring body 1 is designed by the reasonable structure of the support part 11 and the adjusting part 12, so that the accurate placement of the wafer is ensured. The support part 11 is located on the inner ring side of the edge ring, and stable support is provided to ensure that the wafer maintains a stable position during the heat annealing process; the adjusting part 12 is designed as a plurality of slope sections, and the slope gradually increases from the inner ring to the outer ring, which helps the wafer to slide to the support part 11 during the vibration process, avoids the problem of uneven heat conduction caused by the position deviation of the wafer, effectively reduces the difference in the contact area between the wafer and the edge ring, ensures the uniform contact of the wafer in different directions, and avoids the edge deviation phenomenon. Secondly, the setting of the vibrating part 2 further improves the accuracy of the wafer position correction. Through the pulse airflow provided by the plurality of jet pipes 21, the vibrating part 2 can accurately drive the wafer to slide on the edge ring body 1 with a small amplitude, so that the wafer is finally positioned on the support part 11. In addition, the heating part 3 adjusts the temperature of the edge ring body 1 by the induction heating mode, so as to minimize the temperature difference between the edge ring and the wafer, thereby avoiding the edge deviation effect caused by the too large temperature difference. Through this uniform heating design, the annealing process of the wafer is more uniform, and the stability of the process is improved.

[0042] In the description of the present application, it should be explained that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" and the like indicate the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and cannot be understood as limiting or implying that the devices or elements indicated must have a specific orientation, structure and operation, therefore cannot be understood as limiting the present application. In addition, the terms "first" and "second" are only for the purpose of description, and cannot be understood as indicating or implying relative importance. Among them, the terms "first position" and "second position" are two different positions.

[0043] Unless otherwise defined, the terms "mounting", "connected", "connecting", "fixed", "fixing" should be construed as broad terms, for example, can be fixed connection, can also be detachable connection; can be mechanical connection, can also be electrical connection; can be directly connected, can also be indirectly connected through an intermediate medium, can be the internal communication of two elements or the interaction relationship of two elements. For those skilled in the art, the specific meaning of the above terms in the utility model can be understood according to the specific circumstances.

[0044] Unless otherwise specified and limited, "on" or "under" of the first feature to the second feature can include that the first feature and the second feature are in direct contact, or the first feature and the second feature are not in direct contact but are in contact through another feature between them. Moreover, the first feature "on", "above" and "above" of the second feature includes that the first feature is directly above and obliquely above the second feature, or only indicates that the horizontal height of the first feature is higher than that of the second feature. The first feature "below", "below" and "below" of the second feature includes that the first feature is directly below and obliquely below the second feature, or only indicates that the horizontal height of the first feature is less than that of the second feature.

[0045] Although the embodiments of the utility model are described in detail above, it is obvious for those skilled in the art that various modifications and changes can be made to these embodiments. However, it should be understood that such modifications and changes are within the scope and spirit of the utility model described in the claims. Moreover, the utility model described herein can have other embodiments, and can be implemented or realized in various ways.

Claims

1. A wafer position correction device applied to a thermal annealing apparatus, the thermal annealing apparatus comprising a reaction cavity, characterized in that, The utility model relates to a kind of edge ring, including: Edge ring body (1), including support part (11) and adjustment part (12), the support part (11) is close to the inner ring wall surface of the edge ring body (1), the height of the support part (11) is invariable along the inner ring to the outer ring direction of the edge ring body (1);The adjustment part (12) is close to the outer ring wall surface of the edge ring body (1), the height of the adjustment part (12) gradually increases along the inner ring to the outer ring direction of the edge ring body (1); The central lower portion of the edge ring body (1) is provided with a vibration device (2) driven by controlling airflow to drive wafer vibration on the edge ring body (1) to realize that wafer is well matched with the edge ring body (1).

2. The wafer position correction apparatus according to claim 1, wherein The adjustment part (12) includes a plurality of slope sections, and the slope sections gradually decrease in slope along the inner ring to the outer ring direction of the edge ring body (1).

3. The wafer position correction apparatus according to claim 2, wherein The adjustment part (12) includes a first slope section (121), a second slope section (122) and a third slope section (123), and the first slope section (121), the second slope section (122) and the third slope section (123) are sequentially distributed and gradually decrease in slope along the inner ring to the outer ring direction of the edge ring body (1).

4. The wafer position correction apparatus according to claim 3, wherein The first slope section (121) has an angle of 65°-85° with the horizontal direction, the second slope section (122) has an angle of 40°-60° with the horizontal direction, and the third slope section (123) has an angle of 15°-35° with the horizontal direction.

5. The wafer position correction apparatus according to claim 1, wherein The vibration device (2) includes: A gas jet pipe (21) is arranged close to the inner ring bottom of the edge ring body (1), and the gas jet pipe (21) has a gas jet portion that jets gas towards the wafer on the edge ring body (1); A support seat (22) is connected with the gas jet pipe (21), and the support seat (22) is used to support the gas jet pipe (21).

6. The wafer position correction apparatus according to claim 5, wherein Pulse airflow flows through the gas jet pipe (21), and the pulse airflow is a positive pressure airflow.

7. The wafer position correction apparatus according to claim 1, wherein A heating device (3) is arranged on the side of the edge ring body (1) away from the support surface of the support part (11), and the heating device (3) is used to heat the temperature of the edge ring body (1).

8. The wafer position correction apparatus according to claim 7, wherein The heating device (3) includes: A heating coil (31) is arranged inside the edge ring body (1) away from the support surface of the support part (11); A heating power supply (32) is electrically connected with the heating coil (31), and the heating power supply (32) is used to supply power to the heating coil (31).

9. The wafer position correction apparatus according to claim 8, wherein The heating device (3) further includes a temperature sensor (33) arranged inside the edge ring body (1) and electrically connected with the heating power supply (32), and the temperature sensor (33) is used to detect the temperature of the edge ring body (1).

10. The wafer position correction apparatus according to claim 1, wherein Further including a mechanical arm (4) arranged in a reaction cavity, and the mechanical arm (4) has a driving end (41) arranged close to the adjustment part (12), and the driving end (41) is used to drive the wafer on the edge ring body (1) to move to the support part (11).

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