Half-piece solar cell, photovoltaic panel and photovoltaic system
By forming stacked passivation layers on the cut surface of a half-cell solar cell, the problem of efficiency reduction caused by mechanical damage to the cut surface is solved, thereby improving the performance and stability of the photovoltaic panel.
Patent Information
- Application Number
- CN202423202857.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-24
- Publication Date
- 2025-11-21
- Estimated Expiration
- 2034-12-24
AI Technical Summary
When conventional solar cells are cut into half-cells, the cut surfaces are subjected to mechanical damage, which leads to reduced efficiency and affects the economics and reliability of photovoltaic power generation systems.
A stacked passivation layer is formed on the cut surface, including a silicon dioxide layer, an aluminum oxide layer, and a silicon nitride layer. The silicon dioxide layer is located between the cut surface and the aluminum oxide layer. The passivation layer improves the surface condition of the cut surface. The aluminum oxide layer provides hydrogen passivation, and the silicon nitride layer provides protection.
This effectively reduces efficiency loss after cutting, improves the photoelectric conversion efficiency of half-cell solar cells, and enhances the overall performance and stability of photovoltaic panels.
Smart Images
Figure CN223584641U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The present application relates to the field of solar cells, in particular to a half-piece solar cell, a photovoltaic panel and a photovoltaic system. BACKGROUND
[0002] After the production of a finished solar cell is completed, the finished solar cell is cut into a half-piece along the central axis of the solar cell, and then the half-piece is connected in series to form a photovoltaic panel. However, this cutting technology faces a problem that cannot be ignored in actual operation. When the whole solar cell is cut into a half-piece, the cutting surface is often mechanically damaged. These damages may appear as small scratches, cracks or material loss, which can significantly negatively affect the photoelectric conversion efficiency of the half-piece solar cell. According to statistics, due to the mechanical damage of the cutting surface, the efficiency of the half-piece solar cell is usually reduced by about 0.2%-0.4%. Although this efficiency loss seems small, in a large-scale photovoltaic power generation system, it will accumulate into considerable energy loss, thereby affecting the economy and reliability of the entire system. CONTENT OF THE UTILITY MODEL
[0003] The purpose of the present application is to provide a half-piece solar cell, a photovoltaic panel and a photovoltaic system to solve the above problems.
[0004] To achieve the above purpose, the present application adopts the following technical solutions:
[0005] A half-piece solar cell, the half-piece solar cell comprising a cutting surface, a passivation layer is formed on the cutting surface, the passivation layer comprising a silicon dioxide layer, an aluminum oxide layer, a silicon nitride layer arranged in layers, the silicon dioxide layer being arranged between the cutting surface and the aluminum oxide layer.
[0006] According to the embodiment of the present application, the substrate of the half-piece solar cell is a silicon wafer.
[0007] According to the embodiment of the present application, the thickness of the half-piece solar cell is 110-140 μm.
[0008] According to the embodiment of the present application, the thickness of the passivation layer is 14-43 nm.
[0009] According to the embodiment of the present application, the thickness of the silicon dioxide layer is 1-3 nm.
[0010] According to the embodiment of the present application, the thickness of the aluminum oxide layer is 3-10 nm.
[0011] According to the embodiment of the present application, the thickness of the silicon nitride layer is 10-30 nm.
[0012] According to the embodiments of the present application, the thickness of the silicon dioxide layer is 1-2 nm, the thickness of the aluminum oxide layer is 3-8 nm, and the thickness of the silicon nitride layer is 10-20 nm.
[0013] The present application also provides a photovoltaic panel comprising the half solar cell described above.
[0014] The present application also provides a photovoltaic system comprising the photovoltaic panel described above.
[0015] Compared with the prior art, the present application has the following beneficial effects:
[0016] The present application can improve the efficiency loss after cutting, reduce the negative impact of the cutting surface on the cell efficiency, and improve the overall performance and stability of the photovoltaic panel by forming a passivation layer on the cutting surface. Specifically, the silicon dioxide layer can passivate the surface dangling bonds of the cutting surface, the aluminum oxide layer can provide a large number of H atoms to provide hydrogen passivation, and the silicon nitride layer can effectively protect the silicon dioxide layer and the aluminum oxide layer. The silicon dioxide layer, the aluminum oxide layer, and the silicon nitride layer support each other in function and cooperate with each other, so that the passivation layer has good passivation effect and can effectively improve the efficiency loss after cutting. BRIEF DESCRIPTION OF DRAWINGS
[0017] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings needed in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of the present application, and therefore should not be regarded as limiting the scope of the present application.
[0018] Figure 1 Fig. 1 is a structural schematic diagram of a half solar cell;
[0019] Figure 2 Fig. 2 is a schematic diagram of cutting a solar cell.
[0020] LEGEND OF DRAWINGS
[0021] 100 - half solar cell, 100a - cutting surface, 200 - passivation layer, 210 - silicon dioxide layer, 220 - aluminum oxide layer, 230 - silicon nitride layer, AA' - central axis of the solar cell. DETAILED DESCRIPTION
[0022] As used herein:
[0023] "comprising," "having," "including," "containing," or any other variation thereof, are intended to cover a non-exclusive inclusion. For example, a composition, process, method, article, or apparatus that comprises, has, includes, or contains one or more elements possesses those one or more elements but is not limited to only those elements.
[0024] The conjunctive term "consisting of' excludes any element, step, or ingredient not specified. If used in the claims, this phrase shall not be construed to mean that the noted elements or steps are essential to the practice of the claims. The term "consisting of' does not mean "consisting only of."
[0025] When equivalent, concentration, or other values or parameters are expressed in ranges, preferred ranges, or a series of upper preferred values and lower preferred values, it is to be understood that all ranges formed by any pair of any upper and lower preferred value are specifically disclosed, even if that range is not expressly disclosed. For example, where a range "1-5" is disclosed, the described range should be interpreted to include ranges "1-4," "1-3," "1-2," "1-2 and 4-5," "1-3 and 5," etc. When numerical ranges are disclosed, unless otherwise stated, the range is intended to include both the upper and lower values and all intervening values of the range.
[0026] In these embodiments, unless otherwise indicated, the parts and percentages are by mass.
[0027] "Mass parts" refers to a basic unit of measurement that represents the proportional relationship of the mass of multiple components, 1 part can represent any unit mass, such as 1 g, 2.689 g, etc. If we say that the mass parts of component A is a parts, and the mass parts of component B is b parts, it means that the ratio of the mass of component A to the mass of component B is a:b. Alternatively, it means that the mass of component A is aK, and the mass of component B is bK (K is an arbitrary number, indicating a multiple factor). It must not be misunderstood that unlike mass parts, the sum of the mass parts of all components is not limited to 100 parts.
[0028] "and / or" is used to indicate that one or both of the described situations can occur, for example, A and / or B includes (A and B) and (A or B).
[0029] In order to better illustrate the technical solutions provided in the present application, before the embodiments, the technical solutions are stated as a whole, as follows:
[0030] The mechanical damage of the cutting surface of the half solar cell in the prior art reduces the cell efficiency of the half solar cell.
[0031] To improve the above technical problems, the present application provides a half solar cell, referring to Figure 1 The half solar cell 100 comprises a cutting surface 100a, and a passivation layer 200 is formed on the cutting surface 100a. The passivation layer 200 comprises a silicon dioxide layer 210, an aluminum oxide layer 220 and a silicon nitride layer 230 which are stacked. The silicon dioxide layer 210 is arranged between the cutting surface 100a and the aluminum oxide layer 220.
[0032] The silicon dioxide layer 210 can passivate the surface dangling bonds of the cutting surface 100a; the aluminum oxide layer 220 can provide a large number of H atoms to provide hydrogen passivation; the silicon nitride layer 230 can effectively protect the silicon dioxide layer 210 and the aluminum oxide layer 220; and the silicon dioxide layer 210, the aluminum oxide layer 220 and the silicon nitride layer 230 can cooperate with each other to make the passivation layer 200 have a good passivation effect on the cutting surface 100a, effectively improve the efficiency loss after cutting, and make the efficiency of the half solar cell 100 recover by 0.1-0.3%.
[0033] According to the embodiments of the present application, referring to Figure 2 The half solar cell 100 is obtained by cutting a solar cell along a central axis AA' of the solar cell.
[0034] According to the embodiments of the present application, the cutting surface 100a is obtained by cutting.
[0035] According to the embodiments of the present application, the cutting comprises laser cutting.
[0036] In some embodiments, the laser cutting is along the central axis AA' of the solar cell in the silicon wafer to cut the half solar cell 100 which is left-right symmetrical and has the same size. Usually, the cutting line is offset from the central axis by ±80 μm, the laser power is 8-15 W, the spot width is 30-60 μm, the cutting temperature is 50-70℃, and the splitting mode is thermal laser splitting.
[0037] For example, the laser power can be 8 W, 9 W, 10 W, 11 W, 12 W, 13 W, 14 W, 15 W or any value between 8-15 W, the spot width can be 30 μm, 40 μm, 50 μm, 60 μm or any value between 30-60 μm, and the cutting temperature can be 50℃, 60℃, 70℃ or any value between 50-70℃.
[0038] According to the embodiments of the present application, the base material of the half solar cell is a silicon wafer.
[0039] According to an embodiment of the present application, the thickness of the half solar cell is 110-140 μm.
[0040] For example, the thickness of the half solar cell can be 110 μm, 120 μm, 130 μm, 140 μm, or any value between 110-140 μm.
[0041] According to an embodiment of the present application, the thickness of the passivation layer 200 is 14-43 nm. When the thickness of the passivation layer 200 is within the above range, the passivation layer 200 can effectively protect the cutting surface 100a.
[0042] For example, the thickness of the passivation layer 200 can be 14 nm, 15 nm, 20 nm, 25 nm, 30 nm, 35 nm, 40 nm, 43 nm, or any value between 14-43 nm.
[0043] According to an embodiment of the present application, the thickness of the silicon dioxide layer 210 is 1-3 nm. When the thickness of the silicon dioxide layer 210 is within the above range, sufficient passivation effect can be provided.
[0044] For example, the thickness of the silicon dioxide layer 210 can be 1 nm, 2 nm, 3 nm, or any value between 1-3 nm.
[0045] In some embodiments, the silicon dioxide layer 210 is prepared by a chemical vapor deposition (CVD) method. Specifically, the silicon dioxide layer 210 is obtained by heating the half solar cell 100 to 420 °C, exposing the cutting surface 100a, and using the oxidizing ability of laughing gas to grow the silicon dioxide layer 210 under the conditions of a laughing gas flow of 6000-9000 sccm / min, a pressure of 1300-1800 mtorr, a radio frequency power of 7000-12000 W, and a time of 100-200 s. The silicon dioxide can perform dangling bond passivation on the cutting surface.
[0046] In forming the silicon dioxide layer 210, the flow rate of nitrous oxide can be 6000 sccm / min, 7000 sccm / min, 8000 sccm / min, 9000 sccm / min, or any value between 6000-9000 sccm / min, the pressure can be 1300 mtorr, 1400 mtorr, 1500 mtorr, 1600 mtorr, 1700 mtorr, 1800 mtorr, or any value between 1300-1800 mtorr, the radio frequency power can be 7000 W, 8000 W, 9000 W, 10000 W, 11000 W, 12000 W, or any value between 7000-12000 W, and the time can be 100 s, 110 s, 120 s, 130 s, 140 s, 150 s, 160 s, 170 s, 180 s, 190 s, 200 s, or any value between 100-200 s.
[0047] According to embodiments of the present application, the thickness of the aluminum oxide layer 220 is 3-10 nm. When the thickness of the aluminum oxide layer 220 is within the above range, there are a large number of hydrogen bonds in the aluminum oxide layer 220, which can provide sufficient hydrogen bond passivation of the cutting surface 100a; if the thickness of the aluminum oxide layer 220 is too large, the edge around plating phenomenon will be intensified, thereby adversely affecting the tensile welding performance of the assembly.
[0048] For example, the thickness of the aluminum oxide layer 220 can be 3 nm, 4 nm, 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, 10 nm, or any value between 3-10 nm.
[0049] In some embodiments, the aluminum oxide layer 220 is prepared by a chemical vapor deposition (CVD) method. Specifically, the aluminum oxide layer 220 is obtained by growing the aluminum oxide layer 220 on the silicon dioxide layer 210 under the conditions of a pressure of 1400-1800 mtorr, a radio frequency power of 6000-9000 W, a flow rate of trimethylaluminum of 40-70 sccm / min, a flow rate of nitrous oxide of 3000-6000 sccm / min, and a time of 60-150 s.
[0050] In forming the aluminum oxide layer 220, the pressure can be 1400 mtorr, 1500 mtorr, 1600 mtorr, 1700 mtorr, 1800 mtorr, or any value between 1400-1800 mtorr, the radio frequency power can be 6000 W, 6500 W, 7000 W, 7500 W, 8000 W, 8500 W, 9000 W, or any value between 6000-9000 W, the flow rate of trimethylaluminum can be 40 sccm / min, 50 sccm / min, 60 sccm / min, 70 sccm / min, or any value between 40-70 sccm / min, the flow rate of nitrous oxide can be 3000 sccm / min, 4000 sccm / min, 5000 sccm / min, 6000 sccm / min, or any value between 3000-6000 sccm / min, and the time can be 60 s, 70 s, 80 s, 90 s, 100 s, 110 s, 120 s, 130 s, 140 s, 150 s, or any value between 60-150 s.
[0051] According to embodiments of the present application, the thickness of the silicon nitride layer 230 is 10-30 nm. The refractive index of silicon nitride is 2.15, and when the thickness of the silicon nitride layer 230 is within the above range, the silicon dioxide layer 210 and the aluminum oxide layer 220 can be effectively protected, and the generation of leakage current can be significantly reduced.
[0052] For example, the thickness of the silicon nitride layer 230 can be 10 nm, 11 nm, 12 nm, 13 nm, 14 nm, 15 nm, 16 nm, 17 nm, 18 nm, 19 nm, 20 nm, 21 nm, 22 nm, 23 nm, 24 nm, 25 nm, 26 nm, 27 nm, 28 nm, 29 nm, 30 nm, or any value between 10-30 nm.
[0053] In some embodiments, the silicon nitride layer 230 is prepared by a chemical vapor deposition (CVD) method. Specifically, the silicon nitride layer 230 is obtained by growing the silicon nitride layer 230 on the aluminum oxide layer 220 under the conditions that the flow rate of silane is 1200-1800 sccm / min, the flow rate of ammonia is 6500-9500 sccm / min, the pressure is 1300-1700 mtorr, and the time is 100-300 s.
[0054] For example, in forming the silicon nitride layer 230, the silane flow rate can be 1200 sccm / min, 1250 sccm / min, 1300 sccm / min, 1350 sccm / min, 1400 sccm / min, 1450 sccm / min, 1500 sccm / min, 1550 sccm / min, 1600 sccm / min, 1650 sccm / min, 1700 sccm / min, 1750 sccm / min, 1800 sccm / min, or any value between 1200-1800 sccm / min, the ammonia flow rate can be 6500 sccm / min, 7000 sccm / min, 7500 sccm / min, 8000 sccm / min, 8500 sccm / min, 9000 sccm / min, 9500 sccm / min, or any value between 6500-9500 sccm / min, the pressure can be 1300 mtorr, 1400 mtorr, 1500 mtorr, 1600 mtorr, 1700 mtorr, or any value between 1300-1700 mtorr, and the time can be 100 s, 200 s, 300 s, or any value between 100-300 s.
[0055] According to embodiments of the present application, the thickness of the silicon dioxide layer 210 is 1-2 nm, the thickness of the aluminum oxide layer 220 is 3-8 nm, and the thickness of the silicon nitride layer 230 is 10-20 nm.
[0056] The present application also provides a photovoltaic panel comprising the half solar cell 100 described above.
[0057] The present application also provides a photovoltaic system comprising the photovoltaic panel described above.
[0058] The embodiments of the present application will be described in detail below with specific examples, but those skilled in the art will understand that the following examples are only for illustration of the present application and should not be regarded as limiting the scope of the present application. The specific conditions not mentioned in the examples are carried out according to the conventional conditions or the conditions recommended by the manufacturer. The reagents or instruments used are not marked with the manufacturer, which are all conventional products that can be purchased on the market.
[0059] Example 1
[0060] The embodiment 1 provides a half solar cell 100, the base material of the half solar cell 100 is a silicon wafer, and the thickness of the half solar cell 100 is 130 μm. The half solar cell 100 comprises a cutting surface 100a, and a passivation layer 200 is formed on the cutting surface 100a, the passivation layer 200 comprises a silicon dioxide layer 210, an aluminum oxide layer 220 and a silicon nitride layer 230 which are arranged in a stack, and the silicon dioxide layer 210 is located between the cutting surface 100a and the aluminum oxide layer 220, wherein the thickness of the silicon dioxide layer 210 is 2 nm, the thickness of the aluminum oxide layer 220 is 6 nm, and the thickness of the silicon nitride layer 230 is 20 nm.
[0061] The half solar cell 100 of the embodiment 1 is obtained by the following method.
[0062] (1) An integral solar cell is prepared, and the integral solar cell is cut into two half solar cells 100 with equal areas along a central axis by laser cutting, the two half solar cells 100 are the same in structure, and a cutting surface 100a of the half solar cell 100 is formed after cutting;
[0063] wherein the laser power is 10 W, the spot width is 35 μm, the cutting temperature is 60 ℃, and the splitting mode is thermal laser splitting;
[0064] (2) Every 200 half solar cells 100 are sequentially stacked and placed in a graphite boat tool, and only the cutting surface 100a is exposed outside; and the cutting surface 100a is treated;
[0065] (3) The half solar cell 100 is first purged with 20000 sccm / min of nitrogen for 5 min, and the dirt on the surface of the cutting surface 100a is removed by purging;
[0066] (4) The half solar cell 100 is heated to 420 ℃, and a 2 nm-thick silicon dioxide layer 210 is grown on the cutting surface 100a by using the oxidation ability of laughing gas under the conditions that the laughing gas flow is 7000 sccm / min, the pressure is 1500 mtorr, the radio frequency power is 8000 W, and the time is 180 s;
[0067] (5) An aluminum oxide layer 220 with a thickness of 6 nm is grown on the silicon dioxide layer 210 under the conditions that the pressure is 1600 mtorr, the radio frequency power is 7500 W, the flow of trimethylaluminum is 60 sccm / min, the flow of laughing gas is 5000 sccm / min, and the time is 120 s;
[0068] (6) A silicon nitride layer 230 with a thickness of 20 nm is grown on the aluminum oxide layer 220 under the conditions that the flow of silane is 1350 sccm / min, the flow of ammonia is 8500 sccm / min, the pressure is 1400 mtorr, and the time is 200 s.
[0069] Comparative Example 1
[0070] A half-cut solar cell of Comparative Example 1 was produced in accordance with the method of Example 1, the structure of the half-cut solar cell of Comparative Example 1 being similar to that of Example 1, except that the passivation layer 200 of Comparative Example 1 was a silicon dioxide layer 210, the thickness of the silicon dioxide layer 210 in Comparative Example 1 being 2 nm.
[0071] Comparative Example 2
[0072] A half-cut solar cell of Comparative Example 2 was produced in accordance with the method of Example 1, the structure of the half-cut solar cell of Comparative Example 2 being similar to that of Example 1, except that the passivation layer 200 of Comparative Example 2 was an aluminum oxide layer 220, the thickness of the aluminum oxide layer 220 in Comparative Example 2 being 6 nm.
[0073] Comparative Example 3
[0074] A half-cut solar cell of Comparative Example 3 was produced in accordance with the method of Example 1, the structure of the half-cut solar cell of Comparative Example 3 being similar to that of Example 1, except that the passivation layer 200 of Comparative Example 3 was a silicon nitride layer 230, the thickness of the silicon nitride layer 230 in Comparative Example 3 being 20 nm.
[0075] Comparative Example 4
[0076] A half-cut solar cell of Comparative Example 4 was produced in accordance with the method of Example 1, the structure of the half-cut solar cell of Comparative Example 4 being similar to that of Example 1, except that the passivation layer 200 of Comparative Example 4 was a silicon dioxide layer 210 and a silicon nitride layer 230 arranged in layers, the silicon dioxide layer 210 being arranged between the cut surface 100a and the silicon nitride layer 230. The thickness of the silicon dioxide layer 210 in Comparative Example 4 was 2 nm, and the thickness of the silicon nitride layer 230 was 20 nm.
[0077] Comparative Example 5
[0078] A half-cut solar cell of Comparative Example 5 was produced in accordance with the method of Example 1, the structure of the half-cut solar cell of Comparative Example 5 being similar to that of Example 1, except that the passivation layer 200 of Comparative Example 5 was a silicon dioxide layer 210 and an aluminum oxide layer 220 arranged in layers, the silicon dioxide layer 210 being arranged between the cut surface 100a and the aluminum oxide layer 220. The thickness of the silicon dioxide layer 210 in Comparative Example 5 was 2 nm, and the thickness of the aluminum oxide layer 220 was 6 nm.
[0079] Comparative Example 6
[0080] The half solar cell of Comparative Example 6 was prepared according to the method of Example 1. The structure of the half solar cell of Comparative Example 6 was similar to that of Example 1, except that the passivation layer 200 of Comparative Example 6 was a laminated aluminum oxide layer 220 and silicon nitride layer 230, with the aluminum oxide layer 220 between the cut surface 100a and the silicon nitride layer 230. The thickness of the aluminum oxide layer 220 was 6 nm, and the thickness of the silicon nitride layer 230 was 20 nm in Comparative Example 6.
[0081] Comparative Example 7
[0082] The half solar cell of Comparative Example 7 was prepared according to the method of Example 1. The structure of the half solar cell of Comparative Example 7 was similar to that of Example 1, except that the passivation layer 200 of Comparative Example 7 was a laminated aluminum oxide layer 220, silicon dioxide layer 210, and silicon nitride layer 230, with the aluminum oxide layer 220 between the cut surface 100a and the silicon dioxide layer 210. The thickness of the aluminum oxide layer 220 was 6 nm, the thickness of the silicon dioxide layer 210 was 2 nm, and the thickness of the silicon nitride layer 230 was 20 nm in Comparative Example 7.
[0083] Comparative Example 8
[0084] The half solar cell of Comparative Example 8 was prepared according to the method of Example 1. The structure of the half solar cell of Comparative Example 8 was similar to that of Example 1, except that the passivation layer 200 of Comparative Example 8 was a laminated silicon dioxide layer 210, silicon nitride layer 230, and aluminum oxide layer 220, with the silicon dioxide layer 210 between the cut surface 100a and the silicon nitride layer 230. The thickness of the silicon dioxide layer 210 was 2 nm, the thickness of the silicon nitride layer 230 was 20 nm, and the thickness of the aluminum oxide layer 220 was 6 nm in Comparative Example 8.
[0085] The whole solar cell before cutting, the half solar cell without a passivation layer after cutting, and the half solar cells of Example 1 and Comparative Examples 1-8 were tested for performance, and the test results are shown in Table 1 below. Table 1: Performance Test Comparison of Whole Solar Cell, Half Solar Cell Without Passivation Layer, Half Solar Cell of Example 1, and Half Solar Cells of Comparative Examples 1-8
[0086]
[0087] As can be seen from Table 1, compared with the solar cell without the passivation layer, the efficiency of the half solar cell 100 can be improved after the passivation layer 200 is arranged. And the efficiency of the half solar cell of Example 1 is higher than that of the half solar cells of Comparative Examples 1-8. It is illustrated that the passivation layer 200 comprises the silicon dioxide layer 210, the aluminum oxide layer 220 and the silicon nitride layer 230 arranged in a stack, and the efficiency of the half solar cell is improved most when the silicon dioxide layer 210 is located between the cutting surface 100a and the aluminum oxide layer 220, which illustrates that the passivation layer 200 has the best passivation effect.
[0088] Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the present application, but not to limit them; although the present application has been described in detail with reference to the above embodiments, those skilled in the art should understand that: it can still modify the technical solutions recorded in the above embodiments, or make equivalent replacement for part or all of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present application.
[0089] In addition, those skilled in the art can understand that although some embodiments herein include certain features included in other embodiments rather than other features, the combination of features of different embodiments means to be within the scope of the present application and form different embodiments. For example, in the above claims, any one of the claimed embodiments can be used in any combination. The information disclosed in the background section is only intended to deepen the understanding of the general background of the present application, and should not be regarded as acknowledging or implying in any form that the information constitutes the prior art known to those skilled in the art.
Claims
1. A half-cell solar cell, characterized in that, The half-cell solar cell includes a cut surface, on which a passivation layer is formed. The passivation layer includes a silicon dioxide layer, an aluminum oxide layer, and a silicon nitride layer stacked together, with the silicon dioxide layer disposed between the cut surface and the aluminum oxide layer.
2. The half-cell solar cell according to claim 1, characterized in that, The substrate of the half-cell solar cell is a silicon wafer.
3. The half-cell solar cell according to claim 2, characterized in that, The thickness of the half-cell solar cell is 110–140 μm.
4. The half-cell solar cell according to claim 1, characterized in that, The thickness of the passivation layer is 14–43 nm.
5. The half-cell solar cell according to claim 4, characterized in that, The thickness of the silicon dioxide layer is 1–3 nm.
6. The half-cell solar cell according to claim 4, characterized in that, The thickness of the alumina layer is 3–10 nm.
7. The half-cell solar cell according to claim 4, characterized in that, The thickness of the silicon nitride layer is 10–30 nm.
8. The half-cell solar cell according to any one of claims 4-7, characterized in that, The thickness of the silicon dioxide layer is 1-2 nm, the thickness of the aluminum oxide layer is 3-8 nm, and the thickness of the silicon nitride layer is 10-20 nm.
9. A photovoltaic panel, characterized in that, Includes the half-cell solar cell as described in any one of claims 1-8.
10. A photovoltaic system, characterized in that, Includes the photovoltaic panel as described in claim 9.