Cleaning device for PECVD (plasma enhanced chemical vapor deposition) reaction cavity and PECVD equipment

Abstract

The utility model provides a cleaning device for a PECVD (plasma enhanced chemical vapor deposition) reaction cavity and PECVD equipment. The cleaning device comprises a first remote plasma source, a second remote plasma source, a third remote plasma source and a fourth remote plasma source which are arranged outside the PECVD reaction cavity, and further comprises a first manifold, a second manifold, a first valve, a second valve, an air extractor and a cleaning module, the first remote plasma source and the second remote plasma source are communicated with the first manifold, and the third remote plasma source and the fourth remote plasma source are communicated with the second manifold. The first valve and the second valve are connected to the first exhaust pipeline and the second exhaust pipeline respectively; the first exhaust pipeline and the second exhaust pipeline are connected to the lower ends of the first manifold and the second manifold respectively; the cleaning module alternately controls the first remote plasma source, the second remote plasma source and the first valve to be opened or closed and simultaneously controls the third remote plasma source, the fourth remote plasma source and the second valve to be in opposite states so as to control the air extractor to alternately extract cleaned air from the first exhaust pipeline or the second exhaust pipeline. The cleaning device can improve the cleaning uniformity and reduce the cleaning time.

Description

TECHNICAL FIELD

[0001] The utility model relates to photovoltaic manufacturing field, especially the cleaning device for PECVD reaction cavity and PECVD equipment. BACKGROUND

[0002] PECVD chamber will deposit thin film in the chamber inner wall in the film forming process, these thin films can possibly form particles because of stress peeling and affect film forming quality, therefore PECVD chamber usually needs cleaning after executing multiple deposition processes.

[0003] But RF cleaning can cause certain damage or change the surface properties of the chamber inner wall and its internal parts, and the cleaning effect of the edge area is poor, which can lead to too long cleaning time. In order to provide more uniform cleaning effect and reduce cleaning time, some people in the industry use remote plasma source RPS cleaning, which usually introduces remote plasma source from the top, passes through the gas distribution plate and then cleans the inner wall of the cavity and the substrate. During cleaning, the carrier plate carrying the silicon wafer can also be placed in the cavity for cleaning. However, this cleaning method is for PECVD chambers including multiple stacked sub-chambers, and the uniformity of each layer of cleaning differs greatly, and the cleaning time is also longer.

[0004] Therefore, how to provide a cleaning device for PECVD reaction cavity and PECVD equipment to improve cleaning uniformity and reduce cleaning time has become a technical problem to be solved in the industry. SUMMARY

[0005] In view of the above problems of the prior art, the utility model provides a cleaning device for PECVD reaction cavity, the PECVD reaction cavity includes n layers of sub-chambers, characterized in that the cleaning device includes a first remote plasma source, a second remote plasma source, a third remote plasma source and a fourth remote plasma source arranged outside the PECVD reaction cavity, a first manifold, a second manifold, a first valve, a second valve, an exhaust device and a cleaning module, the first remote plasma source and the second remote plasma source are connected in communication with the first manifold, the third remote plasma source and the fourth remote plasma source are connected in communication with the second manifold, the first valve and the second valve are connected to the first exhaust pipe and the second exhaust pipe respectively, and the first exhaust pipe and the second exhaust pipe are connected to the lower ends of the first manifold and the second manifold respectively.

[0006] The cleaning module alternately controls the first remote plasma source, the second remote plasma source and the first valve to be opened or closed, and simultaneously controls the third remote plasma source, the fourth remote plasma source and the second valve to be in opposite states, so as to control the gas pumping device to alternately pump out the cleaned gas from the first exhaust pipeline or the second exhaust pipeline.

[0007] In an embodiment, the first valve and the second valve each comprise a plug valve.

[0008] In an embodiment, the gas pumping device comprises a vacuum pump.

[0009] In an embodiment, the cleaning module controls the first remote plasma source, the second remote plasma source and the first valve to switch from one of the opened state and the closed state to the other state within a time interval of 100-120 seconds, and controls the third remote plasma source, the fourth remote plasma source and the second valve to switch from one opposite state to the other opposite state within a corresponding time interval of 100-120 seconds.

[0010] In an embodiment, the first remote plasma source and the third remote plasma source are respectively connected to the middle part of the top plate of the PECVD reaction chamber, and the second remote plasma source and the fourth remote plasma source are respectively connected to the middle part of the bottom plate of the PECVD reaction chamber.

[0011] In an embodiment, the shielding part has an n-shaped or H-shaped cross section.

[0012] In an embodiment, the PECVD reaction chamber comprises an outer chamber and an inner chamber nested with each other, the n layers of sub-chambers form the inner chamber, and the first manifold and the second manifold are arranged in the outer chamber through the outer chamber wall.

[0013] In an embodiment, the first manifold and the second manifold are vertically arranged on both sides of the n layers of sub-chambers and each comprise a main pipe and n branch pipes connected to the main pipe, the n branch pipes are respectively connected to each layer of sub-chambers, and the main pipe is located in the outer chamber and outside the inner chamber.

[0014] In an embodiment, the cleaning gas of the first remote plasma source, the second remote plasma source, the third remote plasma source and the fourth remote plasma source is NF3, the NF3 forms fluorine radicals in the first remote plasma source, the second remote plasma source, the third remote plasma source and the fourth remote plasma source, the fluorine radicals react with the reaction residues in the n layers of sub-chambers to generate volatile products.

[0015] In an embodiment, the n layers of sub-chambers comprise four layers of sub-chambers and six layers of sub-chambers.

[0016] The utility model discloses still disclose a PECVD equipment, it includes PECVD reaction cavity and be used for the cleaning device of PECVD reaction cavity, its characterized in that, the cleaning device is as any one of the cleaning device for PECVD reaction cavity as above.

[0017] In an embodiment, the PECVD equipment further comprises gas supply pipelines for supplying reaction gas to the n layers of sub-cavities, and the reaction gas after the n layers of sub-cavities is extracted by the gas extraction device through the first manifold, the second manifold, the first exhaust pipeline and the second exhaust pipeline.

[0018] Compared with the prior art in which only a remote plasma source is introduced from the top, leading to poor cleaning uniformity and long cleaning time of the PECVD reaction cavity comprising multiple layers of sub-cavities, the cleaning device for the PECVD reaction cavity of the utility model comprises a first remote plasma source, a second remote plasma source, a third remote plasma source and a fourth remote plasma source arranged outside the PECVD reaction cavity, and further comprises a first manifold, a second manifold, a first valve, a second valve, a gas extraction device and a cleaning module. The first remote plasma source and the second remote plasma source are in communication connection with the first manifold, the third remote plasma source and the fourth remote plasma source are in communication connection with the second manifold, the first valve and the second valve are respectively connected to the first exhaust pipeline and the second exhaust pipeline, and the first exhaust pipeline and the second exhaust pipeline are respectively connected to the lower ends of the first manifold and the second manifold. The cleaning module alternately controls the first remote plasma source, the second remote plasma source and the first valve to be opened or closed, and simultaneously controls the third remote plasma source, the fourth remote plasma source and the second valve to be in opposite states, so as to control the gas extraction device to alternately extract the cleaned gas from the first exhaust pipeline or the second exhaust pipeline. The utility model can improve the cleaning uniformity and reduce the cleaning time. BRIEF DESCRIPTION OF DRAWINGS

[0019] The above features and advantages of the utility model can be better understood after reading the detailed description of the embodiments of the present disclosure in conjunction with the following drawings. In the drawings, the components are not necessarily drawn to scale, and components having similar related properties or features can have the same or similar reference numerals.

[0020] Fig. 1 The utility model discloses still disclose a PECVD equipment, it includes PECVD reaction cavity and be used for the cleaning device of PECVD reaction cavity, its characterized in that, the cleaning device is as any one of the cleaning device for PECVD reaction cavity as above.

[0021] Fig. 2 The utility model discloses still disclose a PECVD equipment, it includes PECVD reaction cavity and be used for the cleaning device of PECVD reaction cavity, its characterized in that, the cleaning device is as any one of the cleaning device for PECVD reaction cavity as above.

[0022] Fig. 3The utility model discloses a cleaning device for PECVD reaction cavity's composition structure block schematic diagram of embodiment. DETAILED DESCRIPTION

[0023] The following description will be made by specific embodiments to illustrate the embodiments of the utility model, and the person skilled in the art can easily understand other advantages and effects of the utility model from the content disclosed in the description. Although the description of the utility model will be introduced together with the preferred embodiments, but this does not mean that the features of the utility model are limited to the implementation. On the contrary, the purpose of introducing the utility model together with the implementation is to cover other options or modifications that can be extended based on the claims of the utility model. In order to provide a deep understanding of the utility model, many specific details will be included in the following description. The utility model can also be implemented without using these details. In addition, in order to avoid confusion or obscure the key points of the utility model, some specific details will be omitted in the description.

[0024] In the description of the utility model, it should be pointed out that, unless otherwise explicitly specified and limited, the terms "mounting", "connection", "connection" should be understood broadly, for example, it can be fixed connection, or detachable connection, or integrally connected, it can be mechanical connection, or electrical connection, it can be directly connected, or indirectly connected through intermediate medium, it can be the communication inside two elements. For the person skilled in the art, the specific meaning of the above terms in the utility model can be understood according to the specific circumstances.

[0025] In addition, in the following description, "up", "down", "left", "right", "top", "bottom", "horizontal", "vertical" should be understood as the orientation shown in the paragraph and the related drawings. The relative terms are only for the convenience of description, and they do not mean that the device described should be manufactured or operated in a particular orientation, so they should not be understood as a limitation of the utility model.

[0026] It can be understood that although the terms "first", "second", "third" and the like can be used to describe various components, regions, layers and / or parts, these components, regions, layers and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers and / or parts. Therefore, the first component, region, layer and / or part discussed below can be called the second component, region, layer and / or part without deviating from some embodiments of the utility model.

[0027] Referring to Figs. 1-3 , three are the composition structure perspective schematic diagram, the composition structure front view schematic diagram and the composition structure block schematic diagram of the cleaning device for PECVD reaction cavity's composition structure block schematic diagram of embodiment of the utility model. As Figs. 1-3As shown, the cleaning device for the PECVD reaction cavity comprises a first remote plasma source 12, a second remote plasma source 13, a third remote plasma source 14, a fourth remote plasma source 15, a first manifold 16, a second manifold 17, a first valve V1, a second valve V2, a gas extraction device P1 and a cleaning module 18. The first remote plasma source 12, the second remote plasma source 13, the third remote plasma source 14 and the fourth remote plasma source 15 are arranged outside the PECVD reaction cavity, the PECVD reaction cavity comprises n layers of sub-cavities 110, the first remote plasma source 12 and the second remote plasma source 13 are connected in communication with the first manifold 16, the third remote plasma source 14 and the fourth remote plasma source 15 are connected in communication with the second manifold 17, the first valve V1 and the second valve V2 are respectively connected to the first exhaust pipeline 190 and the second exhaust pipeline 192, and the first exhaust pipeline 190 and the second exhaust pipeline 192 are respectively connected to the lower ends of the first manifold 16 and the second manifold 17. The cleaning module 18 alternately controls the first remote plasma source 12, the second remote plasma source 13 and the first valve V1 to be opened or closed, and simultaneously controls the third remote plasma source 14, the fourth remote plasma source 15 and the second valve V2 to be in opposite states, so as to control the gas extraction device P1 to alternately extract the cleaned gas from the first exhaust pipeline 190 or the second exhaust pipeline 192.

[0028] The time interval for the cleaning module 18 to control the first remote plasma source 12, the second remote plasma source 13 and the first valve V1 to switch from one of the opened state and the closed state to the other is 100-120 seconds, and the time interval for the cleaning module 18 to control the third remote plasma source 14, the fourth remote plasma source 15 and the second valve V2 to switch from one opposite state to another opposite state is also 100-120 seconds.

[0029] The PECVD reaction cavity comprises an outer cavity 10 and an inner cavity 11 nested with each other, the n layers of sub-cavities 110 form the inner cavity 11, a substrate 112 is arranged in each layer of sub-cavities 110, and a carrier plate carrying silicon wafers can also be placed on the substrate 112 for synchronous cleaning during cleaning, and the first manifold 16 and the second manifold 17 are arranged in the outer cavity 10 through the outer cavity wall. The first exhaust pipeline 190 and the second exhaust pipeline 192 converge and communicate with a third exhaust pipeline 194, the gas extraction device P1 communicates with the third exhaust pipeline 194 and extracts the cleaned gas from the first exhaust pipeline 190 or the second exhaust pipeline 192 through the third exhaust pipeline 194.

[0030] The first manifold 16 and the second manifold 17 are vertically arranged on both sides of the n-layer sub-cavities 110 and each comprises a main pipe 160, 170 and n branch pipes 162, 172 connected with the main pipe 160, 170, the n branch pipes 162, 172 are respectively connected with each layer of the sub-cavities 110, and the main pipe 160, 170 is located inside the outer cavity 10 and outside the inner cavity 11.

[0031] The first valve V1 and the second valve V2 each comprise a plug valve. The pumping device P1 comprises a vacuum pump. The first remote plasma source 12 and the third remote plasma source 14 are respectively connected at the middle of the top plate of the PECVD reaction cavity, and the second remote plasma source 13 and the fourth remote plasma source 15 are respectively connected at the middle of the bottom plate of the PECVD reaction cavity.

[0032] The cleaning gas of the first remote plasma source 12, the second remote plasma source 13, the third remote plasma source 14 and the fourth remote plasma source 15 is NF3, the NF3 forms fluorine radicals in the first remote plasma source 12, the second remote plasma source 13, the third remote plasma source 14 and the fourth remote plasma source 15, the fluorine radicals react with the reaction residues in the n-layer sub-cavities 110 to generate volatile products. The n-layer sub-cavities 110 comprise four-layer sub-cavities and six-layer sub-cavities.

[0033] Referring to Fig. 3 When the cleaning device for the PECVD reaction cavity is used for cleaning, the first remote plasma source 12, the second remote plasma source 13 and the first valve V1 are opened by the cleaning module 18, and at the same time, the third remote plasma source 14, the fourth remote plasma source 15 and the second valve V2 are in a closed state, so that the fluorine radicals generated by the first remote plasma source 12 and the second remote plasma source 13 enter each layer of the sub-cavities 110 and react with the reaction residues therein to generate volatile products, and the gas after cleaning is pumped out from the first exhaust pipe 190 and the third exhaust pipe 194 by the control pumping device P1. After 100-120 seconds, the first remote plasma source 12, the second remote plasma source 13 and the first valve V1 are closed by the cleaning module 18, and at the same time, the third remote plasma source 14, the fourth remote plasma source 15 and the second valve V2 are in an open state, so that the fluorine radicals generated by the third remote plasma source 14 and the fourth remote plasma source 15 enter each layer of the sub-cavities 110 and react with the reaction residues therein to generate volatile products, and the gas after cleaning is pumped out from the second exhaust pipe 192 and the third exhaust pipe 194 by the control pumping device P1. The cleaning module 18 alternately introduces the remote plasma source from both sides, thereby effectively improving the cleaning uniformity and reducing the cleaning time.

[0034] The utility model discloses still disclose a kind of PECVD equipment, it includes PECVD reaction cavity and the cleaning device for PECVD reaction cavity, the cleaning device is as Figs. 1-2 The cleaning device for PECVD reaction cavity shown in the figure.

[0035] The PECVD equipment further includes gas supply pipeline for supplying reaction gas to n layers of sub-cavity 110 respectively, and the reaction gas after the n layers of sub-cavity 110 is extracted by the gas extraction device 18 via the first manifold 16, the second manifold 17, the first exhaust pipe 100 and the second exhaust pipe 192. The first exhaust pipe 190 intersects with the second exhaust pipe 192 and communicates with the third exhaust pipe 194, and the gas extraction device P1 communicates with the third exhaust pipe 194 and extracts the reacted gas from the first exhaust pipe 190 or the second exhaust pipe 192 through the third exhaust pipe 194.

[0036] In summary, the cleaning device for PECVD reaction cavity of the utility model includes a first remote plasma source, a second remote plasma source, a third remote plasma source and a fourth remote plasma source arranged outside the PECVD reaction cavity, and further includes a first manifold, a second manifold, a first valve, a second valve, a gas extraction device and a cleaning module. The first remote plasma source and the second remote plasma source are connected in communication with the first manifold, the third remote plasma source and the fourth remote plasma source are connected in communication with the second manifold, the first valve and the second valve are connected to the first exhaust pipe and the second exhaust pipe respectively, and the first exhaust pipe and the second exhaust pipe are connected to the lower ends of the first manifold and the second manifold respectively. The cleaning module alternately controls the first remote plasma source, the second remote plasma source and the first valve to be opened or closed, and simultaneously controls the third remote plasma source, the fourth remote plasma source and the second valve to be in opposite states, so as to control the gas extraction device to alternately extract the cleaned gas from the first exhaust pipe or the second exhaust pipe. The utility model can improve the cleaning uniformity and reduce the cleaning time.

[0037] The foregoing description of the present disclosure has been directed to enable any person skilled in the art to make or use the disclosure. Various modifications to the disclosure will be readily apparent to those skilled in the art, and the generic principles defined herein can be applied to other variations without departing from the spirit or scope of the disclosure. Thus, the present disclosure is not intended to be limited to the examples described herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein. The embodiments described above are provided to one skilled in the art to enable or use the present disclosure, and various modifications can be made by one skilled in the art to the embodiments described above without departing from the spirit and scope of the present disclosure, and the scope of protection of the present disclosure should not be limited by the embodiments described above, but should be accorded the widest scope consistent with the innovative features disclosed in the claims.

Claims

1. A cleaning device for a PECVD reaction chamber, the PECVD reaction chamber comprising n layers of sub-chambers, characterized in that, The cleaning device comprises a first remote plasma source, a second remote plasma source, a third remote plasma source and a fourth remote plasma source arranged outside the PECVD reaction chamber, and a first manifold, a second manifold, a first valve, a second valve, a gas extraction device and a cleaning module; the first remote plasma source and the second remote plasma source are connected to the first manifold in communication; the third remote plasma source and the fourth remote plasma source are connected to the second manifold in communication; the first valve and the second valve are respectively connected to the first exhaust pipeline and the second exhaust pipeline; the first exhaust pipeline and the second exhaust pipeline are respectively connected to the lower ends of the first manifold and the second manifold. The cleaning module alternately controls the first remote plasma source, the second remote plasma source and the first valve to be opened or closed, and simultaneously controls the third remote plasma source, the fourth remote plasma source and the second valve to be in opposite states, so as to control the gas extraction device to alternately extract the cleaned gas from the first exhaust pipeline or the second exhaust pipeline.

2. The cleaning apparatus for a PECVD reaction chamber of claim 1, wherein, The first valve and the second valve each comprise a plug valve, and the gas extraction device comprises a vacuum pump.

3. The cleaning apparatus for a PECVD reaction chamber of claim 1, wherein, The time interval for the cleaning module to control the first remote plasma source, the second remote plasma source and the first valve to switch from one of the open state and the closed state to the other state is 100-120 seconds, and the time interval for the cleaning module to control the third remote plasma source, the fourth remote plasma source and the second valve to switch from one opposite state to the other opposite state is also 100-120 seconds.

4. The cleaning apparatus for a PECVD reaction chamber of claim 1, wherein, The first remote plasma source and the third remote plasma source are respectively connected to the middle portions of the two sides of the top plate of the PECVD reaction chamber, and the second remote plasma source and the fourth remote plasma source are respectively connected to the middle portions of the two sides of the bottom plate of the PECVD reaction chamber.

5. The cleaning apparatus for a PECVD reaction chamber of claim 1, wherein, The PECVD reaction chamber comprises an outer chamber and an inner chamber nested with each other, the n layers of sub-chambers form the inner chamber, and the first manifold and the second manifold are arranged in the outer chamber.

6. The cleaning apparatus for a PECVD reaction chamber of claim 5, wherein, The first manifold and the second manifold are vertically arranged on the two sides of the n layers of sub-chambers and each comprise a main pipe and n branch pipes connected to the main pipe in communication, the n branch pipes are respectively connected to each layer of sub-chambers in communication, and the main pipe is located in the outer chamber and outside the inner chamber.

7. The cleaning apparatus for a PECVD reaction chamber of claim 1, wherein, The cleaning gas of the first remote plasma source, the second remote plasma source, the third remote plasma source and the fourth remote plasma source is NF3, the NF3 forms fluorine radicals in the first remote plasma source, the second remote plasma source, the third remote plasma source and the fourth remote plasma source, the fluorine radicals react with the reaction residues in the n layers of sub-chambers to generate volatile products.

8. The cleaning apparatus for a PECVD reaction chamber of claim 1, wherein, The n layers of sub-chambers comprise four layers of sub-chambers and six layers of sub-chambers.

9. A PECVD apparatus comprising a PECVD reaction chamber and a cleaning device for the PECVD reaction chamber, characterized in that, The cleaning device is the cleaning device for the PECVD reaction chamber according to any one of claims 1 to 8.

10. The PECVD apparatus of claim 9, wherein, The PECVD device further comprises a gas supply pipeline for supplying reaction gas to the n layers of sub-chambers, and the reaction gas after the n layers of sub-chambers is extracted by the gas extraction device through the first manifold, the second manifold, the first exhaust pipeline and the second exhaust pipeline.

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