Ultra-wideband low-noise amplifier based on GaAs technology

Abstract

The utility model discloses an ultra wide band low noise amplifier based on a GaAs technology, which comprises an input port, an output port, N stages of power amplification units, a first active bias circuit and a second active bias circuit, wherein the N stages of power amplification units are positioned between the input port and the output port and are sequentially cascaded; the first active bias circuit is connected in parallel between the input port and the grounding end, the input end of the second active bias circuit is grounded, and the output end of the second active bias circuit is connected with the output end of the grid electrode of each stage of power amplification unit. An active bias circuit is embedded into the amplifier for integrated design, the chip amplitude consistency is improved, the Miller effect of a first-stage transistor is reduced by using a cascode structure circuit, so that the frequency bandwidth range is expanded, the gain value is higher than that of a distributed amplifier circuit of a cascode structure under the condition that the stages of gain units are the same, and the gain value is higher than that of the distributed amplifier circuit of the cascode structure. And the reverse isolation of the circuit is improved, and the loss of an output transmission line is reduced.

Description

TECHNICAL FIELD

[0001] The utility model relates to the microwave millimeter wave field, concretely relates to a kind of ultra-wideband low noise amplifier based on GaAs technology. BACKGROUND

[0002] In recent years, with the development of wireless communication, due to the crowding of low frequency band frequency, the circuit gradually develops to high frequency band. Therefore, millimeter wave technology has been rapidly developed. Millimeter wave communication, precision weapon guidance and other technologies have a large demand for radio frequency front end. LNA (low noise amplifier) as the core device of millimeter wave integrated receiving front end, its performance index directly affects the performance of the component. Low noise amplifier is widely used in military and civilian aspects. In military applications, it is widely used in satellite communication, satellite payload, radar, aerospace and other system equipment. In civilian aspects, it is mainly related to point-to-point wireless communication, point-to-multipoint wireless communication, automotive radar applications, etc.

[0003] However, with the development of technology, the operating frequency band of the transmitter system is continuously widening, and how to further expand the bandwidth while ensuring the stability and gain of the wideband low noise amplifier is a problem that needs to be solved. SUMMARY

[0004] The utility model aims at providing a kind of ultra-wideband low noise amplifier based on GaAs technology, two active bias circuits are arranged in circuit input port, temperature drift can be reduced, the stability of wideband low noise amplifier is guaranteed, and the common-source common-gate structure circuit reduces the miller effect of first-stage transistor, so as to expand the frequency bandwidth range, under the condition of same gain unit number, the gain value can be improved by 2-4dB than the distributed amplifier circuit of common-source structure, and the reverse isolation of circuit is improved, and the loss of output transmission line is reduced.

[0005] To solve the above technical problems, the utility model adopts the following technical scheme:

[0006] The utility model provides a kind of ultra-wideband low noise amplifier based on GaAs technology, including input port, output port and N-stage power amplification unit located between input port and output port and cascaded in turn, N≥2;It is characterized in that, it further includes first active bias circuit and second active bias circuit, first active bias circuit is connected in parallel between input port and ground terminal, and the input end of second active bias circuit is grounded, and the output end is connected with the output end of the gate of each stage power amplification unit.

[0007] Further, the first active bias circuit comprises a radio frequency transistor M1, a resistor R1, a resistor R2, a resistor R3, the gate of the radio frequency transistor M1 is connected with the input port through an inductor L1 and a capacitor C1 in sequence, the drain of the radio frequency transistor is connected with the ground through a resistor R2, a capacitor C2 and a resistor R4 in sequence, the resistor R1 is connected in parallel between the gate and the drain of the radio frequency transistor M1, and the source of the radio frequency transistor M1 is connected with the ground through a resistor R3 in sequence.

[0008] Further, the second active bias circuit comprises a radio frequency transistor M2, a resistor R5, a resistor R6, a resistor R7, the gate of the radio frequency transistor M2 is connected with the output end of the gate of each power amplification unit, the drain of the radio frequency transistor M2 is connected with the ground through a resistor R5, a capacitor C2 and a resistor R4 in sequence, the resistor R6 is connected in parallel between the gate and the drain of the radio frequency transistor M2, and the source of the radio frequency transistor M2 is connected with the ground through a resistor R7 in sequence.

[0009] Further, the input end of the first power amplification unit is connected with a matching circuit, the matching circuit comprises an inductor L2, a resistor R8 and a capacitor C3 connected in sequence, one end of the resistor R8 and the capacitor C3 is grounded, and the input end of the first power amplification unit is connected between the inductor L2 and the resistor R8.

[0010] Further, each power amplification unit comprises two radio frequency transistors, one end of an inductor L3 is connected to the drain of the first radio frequency transistor, the other end of the inductor L3 is connected between the inductor L2 and the resistor R8, an inductor L5 is connected in series between the source of the first radio frequency transistor and the drain of the second radio frequency transistor, and a resistor R9 is connected to the gate of the first radio frequency transistor; the source of the second radio frequency transistor is grounded, an inductor L6 is connected in series between the gates of the second radio frequency transistors of adjacent two power amplification units, the inductor L6 is connected to the input port through the inductor L1 and the capacitor C1, and a matching inductor L4 is connected in series between the drains of the first radio frequency transistors of adjacent two power amplification units.

[0011] Further, the resistor R9, the resistor R10, the capacitor C4 and the capacitor C5 constitute a resistor-capacitor circuit, two ends of the resistor R9 are connected with the gate of the first radio frequency transistor and one end of the resistor R10 respectively, the other end of the resistor R10 is connected with one end of the capacitor C5, one end of the capacitor C4 is connected in parallel between the resistor R9 and the resistor R10, the other end of the capacitor C4 is grounded, one end of the capacitor C5 is grounded, and the other end of the capacitor C5 is connected with the output end of the second active bias circuit.

[0012] Further, the inductors are equivalent to microstrip lines.

[0013] Further, the drain of the first radio frequency transistor of the last power amplification unit is connected to the output port through an inductor L7 and a capacitor C6 in sequence.

[0014] Further, the gate of the second radio frequency transistor of the last-stage power amplification unit is connected in series with an inductor L8, a resistor R11 and a capacitor C7 in sequence and then grounded.

[0015] The utility model discloses the beneficial effect of:

[0016] The utility model discloses a kind of ultra-wideband low-noise amplifiers based on GaAs technology, active bias circuit is embedded into distributed amplifier for integrated design, realize the single power supply of wideband amplifier, improve chip amplitude consistency, solve the case that amplifier gain, power etc.

[0017] Specifically, by connecting the first active bias circuit between the input port and the ground, and connecting the output end of the matching circuit of each power amplification unit to the second active bias circuit, the common-source common-gate structure circuit is used to reduce the Miller effect of the first transistor, thereby expanding the frequency bandwidth range. BRIEF DESCRIPTION OF DRAWINGS

[0018] Figure 1 A kind of ultra-wideband low-noise amplifier circuit topology structure schematic diagram based on GaAs technology is provided for the utility model embodiment;

[0019] Figure 2 A kind of ultra-wideband low-noise amplifier circuit structure layout based on GaAs technology is provided for the utility model embodiment;

[0020] Figure 3 For the three-temperature curve schematic diagram of small signal gain Gain, noise figure NF based on Figure 2 Chip test;

[0021] Figure 4 For the three-temperature curve schematic diagram of input return loss RL_IN, output return loss RL_OUT based on Figure 2 Chip test;

[0022] Figure 5 For the three-temperature curve schematic diagram of output P-1dB and saturated output power Psat based on Figure 2 Chip test; DETAILED DESCRIPTION

[0023] The utility model will be further explained in detail in combination with embodiment and drawing, but the implementation mode of the utility model is not limited to this.

[0024] In the description of the utility model, it needs to explain that, the terms "center", "upper", "lower", "left", "right", "vertical", "longitudinal", "lateral", "horizontal", "internal", "external", "front", "back", "top", "bottom" and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, or the orientation or positional relationship commonly used when the utility model product is placed, which is only for the convenience of describing the utility model and simplifying the description, and does not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as limiting the utility model.

[0025] In the description of the utility model, it also needs to explain that, unless otherwise explicitly specified and limited, the terms "set", "open", "install", "connect", "connect" should be broadly understood, for example, it can be fixedly connected, or it can be detachably connected, or integrally connected, it can be mechanically connected, or it can be electrically connected, it can be directly connected, or it can be indirectly connected through an intermediate medium, it can be the communication inside two elements. For ordinary skilled in the art, the specific meaning of the above terms in the utility model can be understood according to the specific circumstances.

[0026] The utility model will be described in detail below by referring to the drawings and combining with the embodiments:

[0027] As Figure 2 Indicated, the utility model provides a kind of based on GaAs technology's ultra-wideband low noise amplifier, including input port, output port and the N-stage power amplification unit being sequentially cascaded between input port and output port, N≥2;It also includes first active bias circuit and second active bias circuit, first active bias circuit is shunted between input port and ground terminal, the input end of second active bias circuit is grounded, and the output end is connected with the output end of the gate of each stage power amplification unit.

[0028] More preferably, the first active bias circuit includes a radio frequency transistor M1, a resistor R1, a resistor R2, a resistor R3, the gate of the radio frequency transistor M1 is connected to the input port after sequentially connecting an inductor L1 and a capacitor C1, the drain of the radio frequency transistor is connected to the ground after sequentially connecting a resistor R2, a capacitor C2 and a resistor R4, the resistor R1 is shunted between the gate and the drain of the radio frequency transistor M1, and the source of the radio frequency transistor M1 is grounded after sequentially connecting a resistor R3.

[0029] More preferably, the second active bias circuit comprises a radio frequency transistor M2, a resistor R5, a resistor R6, a resistor R7, the gate of the radio frequency transistor M2 is connected with the output end of the gate of each power amplification unit, the drain of the radio frequency transistor M2 is connected with the ground in sequence through the resistor R5, the capacitor C2 and the resistor R4, the resistor R6 is connected in parallel between the gate and the drain of the radio frequency transistor M2, and the source of the radio frequency transistor M2 is connected with the ground in sequence through the resistor R7.

[0030] More preferably, a matching circuit is connected with the input end of the first power amplification unit, and the matching circuit comprises an inductor L2, a resistor R8 and a capacitor C3 connected in sequence, wherein one end of the resistor R8 and the capacitor C3 is connected with the ground, and the input end of the first power amplification unit is connected between the inductor L2 and the resistor R8.

[0031] More preferably, each power amplification unit comprises two radio frequency transistors, one end of an inductor L3 is connected with the drain of the first radio frequency transistor, the other end of the inductor L3 is connected between the inductor L2 and the resistor R8, an inductor L5 is connected in series between the source of the first radio frequency transistor and the drain of the second radio frequency transistor, and a resistor-capacitor circuit is connected with the gate of the first radio frequency transistor; the source of the second radio frequency transistor is connected with the ground, an inductor L6 is connected in series between the gates of the second radio frequency transistors of adjacent two power amplification units, the inductor L6 is connected to the input port through the inductor L1 and the capacitor C1, and a matching inductor L4 is connected in series between the drains of the first radio frequency transistors of adjacent two power amplification units.

[0032] More preferably, the resistor-capacitor circuit comprises resistors R9 and R10, a capacitor C4 and a capacitor C5, the resistors R9 and R10 are respectively connected with the gate of the first radio frequency transistor and one end of the resistor R10, the other end of the resistor R10 is connected with one end of the capacitor C5, one end of the capacitor C4 is connected in parallel between the resistors R9 and R10, and the other end of the capacitor C4 is connected with the ground, and one end of the capacitor C5 is connected with the ground, and the other end of the capacitor C5 is connected with the output end of the second active bias circuit.

[0033] More preferably, the inductors are equivalent to microstrip lines.

[0034] More preferably, the drain of the first radio frequency transistor of the last power amplification unit is connected to the output port in sequence through the inductor L7 and the capacitor C6.

[0035] More preferably, the gate of the second radio frequency transistor of the last power amplification unit is connected with the ground in sequence through the inductor L8, the resistor R11 and the capacitor C7.

[0036] When the above circuit structure is made into a chip, the circuit is made by GaAs technology, such as Figure 2As shown, N is 7, having seven-stage power amplification circuit, and the inductors L1, L3, L4, L5, L6, L7, L8 on the top are equivalent to microstrip lines, with a width of 12 um and lengths of 270 um, 750 um, 760 um, 460 um, 750 um, 360 um, and 275 um respectively. The transistors all have a size of 2*30 um, L2 is a square spiral inductor with 7 turns, a width of 8 um, a pitch of 5 um, and a diameter of 48 um. The sizes of the capacitors C1, C2, C3, C4, C5, C6, and C7 are 80 um*146 um, 150 um*300 um, 120 um*101.5 um, 52.5 um*50 um, 29 um*29 um, 135 um*150 um, and 140.1 um*200 um respectively.

[0037] In the super wide frequency band of 2GHz-24GHz, the typical values of the low noise amplifier are as follows: a gain of 18.5dB, a noise less than 2dB, a P-1dB of 17dBm, a saturation power Psat of 19dBm, a power consumption of 65mA, and stable three-temperature performance. The active bias circuit can reduce temperature drift and ensure the stability of the wideband low noise amplifier.

[0038] It can be understood that the above embodiments are only exemplary embodiments for illustrating the principles of the present application, and the present application is not limited thereto. Those skilled in the art can make various modifications and improvements without departing from the spirit and essence of the present application, and these modifications and improvements are also considered to be within the protection scope of the present application.

Claims

1. A GaAs process-based ultra-wideband low-noise amplifier, comprising an input port, an output port, and N-stage power amplification units sequentially cascaded between the input port and the output port, N≥2; characterized in that, The first active bias circuit is connected in parallel between the input port and the ground terminal, and the input terminal of the second active bias circuit is grounded, and the output terminal is connected with the gate of each power amplification unit.

2. The ultra-wideband low noise amplifier based on GaAs technology according to claim 1, characterized in that, The first active bias circuit comprises a radio frequency transistor M1, a resistor R1, a resistor R2 and a resistor R3, the gate of the radio frequency transistor M1 is connected with the input port through an inductor L1 and a capacitor C1 in sequence, the drain of the radio frequency transistor is connected with the ground terminal through a resistor R2, a capacitor C2 and a resistor R4 in sequence, the resistor R1 is connected in parallel between the gate and the drain of the radio frequency transistor M1, and the source of the radio frequency transistor M1 is grounded through a resistor R3.

3. The ultra-wideband low noise amplifier based on GaAs technology according to claim 1, characterized in that, The second active bias circuit comprises a radio frequency transistor M2, a resistor R5, a resistor R6 and a resistor R7, the gate of the radio frequency transistor M2 is connected with the output terminal of the gate of each power amplification unit, the drain of the radio frequency transistor M2 is connected with the ground terminal through a resistor R5, a capacitor C2 and a resistor R4 in sequence, the resistor R6 is connected in parallel between the gate and the drain of the radio frequency transistor M2, and the source of the radio frequency transistor M2 is grounded through a resistor R7.

4. The ultra-wideband low noise amplifier based on GaAs technology according to claim 1, characterized in that, A matching circuit is connected at the input terminal of the first power amplification unit, and the matching circuit comprises an inductor L2, a resistor R8 and a capacitor C3 connected in series, wherein one end of the resistor R8 and the capacitor C3 is grounded, and the input terminal of the first power amplification unit is connected between the inductor L2 and the resistor R8.

5. The ultra-wideband low noise amplifier based on GaAs technology according to claim 4, characterized in that, Each power amplification unit comprises two radio frequency transistors, one end of an inductor L3 is connected to the drain of the first radio frequency transistor, the other end of the inductor L3 is connected between the inductor L2 and the resistor R8, an inductor L5 is connected in series between the source of the first radio frequency transistor and the drain of the second radio frequency transistor, and a resistance-capacitance circuit is connected to the gate of the first radio frequency transistor; the source of the second radio frequency transistor is grounded, an inductor L6 is connected in series between the gates of the second radio frequency transistors of adjacent two power amplification units, the inductor L6 is connected to the input port through the inductor L1 and the capacitor C1, and a matching inductor L4 is connected in series between the drains of the first radio frequency transistors of adjacent two power amplification units.

6. The ultra-wideband low noise amplifier based on GaAs technology according to claim 5, characterized in that, The resistance-capacitance circuit comprises resistors R9 and R10 and capacitors C4 and C5, the resistors R9 and R10 are connected with the gate of the first radio frequency transistor and one end of the resistor R10 respectively, the other end of the resistor R10 is connected with one end of the capacitor C5, one end of the capacitor C4 is connected in parallel between the resistors R9 and R10, and the other end of the capacitor C4 is grounded, and one end of the capacitor C5 is grounded and the other end of the capacitor C5 is connected with the output terminal of the second active bias circuit.

7. The ultra-wideband low noise amplifier based on GaAs technology according to claim 5, characterized in that, The inductors are equivalent to microstrip lines.

8. The ultra-wideband low noise amplifier based on GaAs technology according to claim 5, characterized in that, The drain of the first radio frequency transistor of the last power amplification unit is connected to the output port through an inductor L7 and a capacitor C6 in sequence.

9. The ultra-wideband low noise amplifier based on GaAs technology according to claim 5, characterized in that, The gate of the second radio frequency transistor of the last power amplification unit is grounded through an inductor L8, a resistor R11 and a capacitor C7 in sequence.

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