Semiconductor device

Abstract

The utility model discloses a semiconductor device. The semiconductor device comprises a wafer transmission chamber; the connecting pipe fitting comprises a first pipe section extending in the first direction and a second pipe section extending in the second direction, the first pipe section is detachably connected to the bottom of the wafer transmission chamber, and the second pipe section is connected to the first pipe section; the pressure detection device is detachably connected to the second pipe section and is used for detecting the pressure in the wafer transmission chamber; in the vertical direction, the connecting point of the pressure detection device and the second pipe section is not lower than the connecting point of the first pipe section and the second pipe section. According to the semiconductor device, the pressure detection accuracy of the pressure detection device can be effectively improved, and the service life of the pressure detection device can be effectively prolonged.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and more specifically to a semiconductor device. Background Technology

[0002] Currently, pressure sensing devices are typically installed outside the chamber of semiconductor devices to detect the pressure inside the chamber.

[0003] Pressure sensing devices are typically connected directly to the bottom of the chamber or directly to a vacuum line communicating with the chamber. Because semiconductor manufacturing processes generate a large amount of process byproducts, these byproducts may fall into the pressure sensing device directly connected to the bottom of the chamber or accumulate at the detection port of the pressure sensing device directly connected to the vacuum line, affecting the accuracy of the pressure readings and the lifespan of the device.

[0004] Therefore, improvements are needed to at least partially address the aforementioned problems. Utility Model Content

[0005] The utility model description section introduces a series of simplified concepts, which will be further explained in detail in the detailed description section. This utility model description section is not intended to limit the key features and essential technical features of the claimed technical solution, nor is it intended to determine the scope of protection of the claimed technical solution.

[0006] To at least partially solve the above problems, according to a first aspect of the present invention, a semiconductor device is provided, comprising:

[0007] Wafer transfer chamber;

[0008] A connecting pipe fitting, the connecting pipe fitting comprising a first pipe segment extending along a first direction and a second pipe segment extending along a second direction, the first pipe segment being detachably connected to the bottom of the wafer transmission chamber, and the second pipe segment being connected to the first pipe segment;

[0009] A pressure detection device, detachably connected to the second pipe section, is used to detect the pressure inside the wafer transfer chamber;

[0010] In the vertical direction, the connection point between the pressure detection device and the second pipe segment is not lower than the connection point between the first pipe segment and the second pipe segment.

[0011] For example, the first end of the first tube segment is detachably connected to the bottom of the wafer transfer chamber, the second end of the first tube segment is fixedly connected to the first end of the second tube segment, and the pressure detection device is detachably connected to the second end of the second tube segment.

[0012] For example, the first end of the first tube segment is detachably connected to the bottom of the wafer transfer chamber, the second end of the first tube segment is closed, the first end of the second tube segment is connected to the side wall of the first tube segment and adjacent to the second end of the first tube segment, and the pressure detection device is detachably connected to the second end of the second tube segment.

[0013] For example, the pressure sensing device is a vacuum gauge.

[0014] For example, the semiconductor device is a physical vapor deposition device.

[0015] According to a second aspect of the present invention, a semiconductor device is provided, comprising:

[0016] Wafer processing chamber;

[0017] Vacuum pump;

[0018] A vacuum pipeline, the two ends of which are connected to the wafer processing chamber and the vacuum pump, respectively;

[0019] A connecting pipe fitting, the connecting pipe fitting comprising a first pipe segment extending in a first direction and a second pipe segment extending in a second direction, the first pipe segment being connected to the vacuum pipeline, and the second pipe segment being connected to the first pipe segment;

[0020] A pressure detection device, detachably connected to the second pipe section, is used to detect the pressure inside the wafer processing chamber;

[0021] In the vertical direction, the connection point between the pressure detection device and the second pipe segment is not lower than the connection point between the first pipe segment and the second pipe segment.

[0022] For example, the first end of the first pipe segment is fixedly connected to the side wall of the vacuum pipeline, the second end of the first pipe segment is fixedly connected to the first end of the second pipe segment, and the pressure detection device is detachably connected to the second end of the second pipe segment.

[0023] For example, the second pipe segment is parallel to the vacuum line.

[0024] For example, the pressure sensing device is a vacuum gauge.

[0025] For example, the semiconductor device is a physical vapor deposition device.

[0026] According to the semiconductor equipment of this utility model, the pressure detection device is connected to the wafer transfer chamber or vacuum tube section through a connecting pipe. The connecting pipe section has a first pipe section and a second pipe section that are connected to each other. In the vertical direction, the connection point between the pressure detection device and the second pipe section is not lower than the connection point between the first pipe section and the second pipe section. The setting of the connecting pipe section can effectively change the installation orientation of the pressure detection device, increase the difficulty for by-products to move to the pressure detection device, thereby effectively preventing by-products from falling directly into the pressure detection device or accumulating at the port of the pressure detection device, and thus effectively improving the accuracy of the pressure detection and the service life of the pressure detection device. Attached Figure Description

[0027] The following figures are included as part of this application for understanding the application. The figures illustrate embodiments of the application and their descriptions, serving to explain the apparatus and principles of the application. In the figures,

[0028] Figure 1 This is a schematic diagram of the structure of a semiconductor device according to the first embodiment of this application;

[0029] Figure 2 This is a schematic diagram of the structure of a semiconductor device according to the second embodiment of this application;

[0030] Figure 3 This is a schematic diagram of the structure of a semiconductor device according to a third embodiment of this application.

[0031] Explanation of reference numerals in the attached figures:

[0032] 110 - Wafer transmission chamber; 120 - Connecting pipe; 121 - First pipe section; 122 - Second pipe section; 130 - Pressure detection device;

[0033] 210 - Wafer transmission chamber; 220 - Connecting pipe; 221 - First pipe section; 222 - Second pipe section; 230 - Pressure detection device;

[0034] 310 - Wafer processing chamber, 320 - Vacuum pump, 330 - Vacuum pipeline, 340 - Connecting fitting, 341 - First pipe section, 342 - Second pipe section, 350 - Pressure detection device. Detailed Implementation

[0035] The following description provides numerous specific details to offer a more thorough understanding of this application. However, it will be apparent to those skilled in the art that this application can be practiced without one or more of these details. In other instances, certain technical features well-known in the art have not been described to avoid confusion with this application.

[0036] It should be understood that this application can be implemented in various forms and should not be construed as limited to the embodiments set forth herein. Rather, providing these embodiments will make the disclosure thorough and complete, and will fully convey the scope of this application to those skilled in the art. In the drawings, for clarity, the dimensions and relative dimensions of layers and regions may be exaggerated. The same reference numerals denote the same elements throughout.

[0037] It should be understood that although the terms first, second, third, etc., may be used to describe various elements, components, areas, layers, and / or parts, these elements, components, areas, layers, and / or parts should not be limited by these terms. These terms are only used to distinguish one element, component, area, layer, or part from another element, component, area, layer, or part. Therefore, without departing from the teachings of this application, the first element, component, area, layer, or part discussed below may be referred to as the second element, component, area, layer, or part.

[0038] Spatial relation terms such as "below," "under," "below," "under," "above," and "above" are used here for convenience to describe the relationship between one element or feature shown in the figure and other elements or features. It should be understood that, in addition to the orientation shown in the figure, spatial relation terms are intended to also include different orientations of devices in use and operation.

[0039] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the scope of this application. When used herein, the singular forms “a,” “an,” and “the” are also intended to include the plural forms unless the context clearly indicates otherwise. It should also be understood that the terms “comprising” and / or “including,” when used in this specification, identify the presence of the stated features, integers, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups. When used herein, the term “and / or” includes any and all combinations of the associated listed items.

[0040] Embodiments of the utility model are described herein with reference to cross-sectional views that serve as schematic diagrams of preferred embodiments (and intermediate structures) of this application. Thus, variations in the shown shape can be anticipated due to, for example, manufacturing techniques and / or tolerances. Therefore, embodiments of this application should not be limited to the specific shapes shown herein, but include shape deviations due to, for example, manufacturing processes. Consequently, the figures are substantially schematic, and their shapes are not intended to show the actual shape of the device and are not intended to limit the scope of this application.

[0041] See attached document Figure 1A semiconductor device according to a first embodiment of this application will be described by way of example. The semiconductor device includes a wafer transfer chamber 110, a connecting tube 120, and a pressure sensing device 130.

[0042] The wafer transfer chamber 110 is used for transporting wafers within it. During semiconductor processing, a large number of process byproducts are generated, some of which are carried into the wafer transfer chamber 110 as the wafer moves. These byproducts in the wafer transfer chamber 110 fall to the bottom of the chamber as the wafer moves. In related technologies, the pressure sensing device 130 is typically directly connected to the bottom of the wafer transfer chamber 110. Byproducts in the wafer transfer chamber 110 may fall directly into the pressure sensing device 130, affecting the accuracy of pressure detection and potentially causing direct damage to the device.

[0043] The connecting pipe 120 includes a first pipe segment 121 extending in a first direction and a second pipe segment 122 extending in a second direction. The first pipe segment 121 is detachably connected to the bottom of the wafer transfer chamber 110, that is, the first pipe segment 121 communicates with the interior of the wafer transfer chamber 110. The second pipe segment 122 is connected to the first pipe segment 121, that is, the second pipe segment 122 communicates with the first pipe segment 121.

[0044] The pressure detection device 130 is detachably connected to the second pipe section 122. The detection port of the pressure detection device 130 is connected to the wafer transfer chamber 110 through the connecting pipe 120 and is used to detect the pressure (i.e., air pressure) inside the wafer transfer chamber 110.

[0045] In the vertical direction (i.e., the direction of gravity), the connection point of the pressure detection device 130 and the second pipe segment 122 is not lower than the connection point of the first pipe segment 121 and the second pipe segment 122. That is, the connection point of the pressure detection device 130 and the second pipe segment 122 is higher than the connection point of the first pipe segment 121 and the second pipe segment 122, or the connection point of the pressure detection device 130 and the second pipe segment 122 is at the same height as the connection point of the first pipe segment 121 and the second pipe segment 122. When the connection point of the pressure detection device 130 and the second pipe segment 122 is higher than the connection point of the first pipe segment 121 and the second pipe segment 122, the by-products in the wafer transfer chamber 110 will only fall to the connection point of the first pipe segment 121 and the second pipe segment 122, and it is difficult to overcome gravity and move through the second pipe segment 122 to the pressure detection device 130; when the connection point of the pressure detection device 130 and the second pipe segment 122 is at the same height as the connection point of the first pipe segment 121 and the second pipe segment 122, the second pipe segment 122 can also extend the movement path of the by-products in the wafer transfer chamber 110 to a certain extent, making it difficult for them to directly enter the pressure detection device 130.

[0046] According to the semiconductor device of the first embodiment of this application, the pressure detection device 130 is connected to the wafer transfer chamber 110 via a connecting pipe 120. The connecting pipe 120 has a first pipe segment 121 and a second pipe segment 122 that are connected to each other. The first pipe segment 121 and the second pipe segment 122 are detachably connected to the wafer transfer chamber 110 and the pressure detection device 130, respectively. In the vertical direction (i.e., the direction of gravity), the connection point of the pressure detection device 130 and the second pipe segment 122 is not lower than the connection point of the first pipe segment 121 and the second pipe segment 122. Therefore, on the one hand, byproducts in the wafer transmission chamber 110 will only fall to the connection between the first tube segment 121 and the second tube segment 122, and will not fall directly into the pressure detection device 130. This can effectively improve the accuracy of the pressure detection device 130 and its service life, reduce the replacement frequency and cost of the pressure detection device 130, reduce the damage to equipment operating time caused by replacing the pressure detection device 130, and thus improve equipment productivity. On the other hand, the connecting tube 120 can be periodically removed to clean the byproducts inside, avoiding the accumulation of too many byproducts in the connecting tube 120, which would affect the accuracy of the pressure detection device 130.

[0047] In this embodiment, the first end of the first pipe section 121 ( Figure 1 The upper end of the first tube segment 121 is detachably connected to the bottom of the wafer transfer chamber 110. For example, the first end of the first tube segment 121 can be connected to the bottom of the wafer transfer chamber 110 by a detachable connection method commonly used in the art, such as screw connection, bolt connection, or snap connection.

[0048] The second end of the first pipe section 121 ( Figure 1 The lower end of the first pipe section 121 is fixedly connected to the first end of the second pipe section 122. Figure 1 (The left end of the second pipe segment 122). For example, the first pipe segment 121 and the second pipe segment 122 can be integrally formed, such as by injection molding or casting. In some embodiments, the second end of the first pipe segment 121 and the first end of the second pipe segment 122 can be fixedly connected by welding. By fixing the first pipe segment 121 and the second pipe segment 122 together, airtightness can be effectively improved and the risk of leakage reduced.

[0049] Pressure sensing device 130 is detachably connected to the second end of the second pipe section 122. Figure 1 (The right end of the second pipe section 122). For example, the pressure sensing device 130 can be connected to the second end of the second pipe section 122 by a detachable connection method commonly used in the art, such as screw connection, bolt connection, snap connection, etc.

[0050] For example, the first pipe segment 121 may extend vertically, and the second pipe segment 122 may extend horizontally. The connection point between the pressure sensing device 130 and the second pipe segment 122 is at the same height as the connection point between the first pipe segment 121 and the second pipe segment 122. In some other embodiments, the first pipe segment 121 may extend vertically, and the second pipe segment 122 may extend obliquely. The angle between the second pipe segment 122 and the first pipe segment 121 may be less than 90°, so that the connection point between the pressure sensing device 130 and the second pipe segment 122 is higher than the connection point between the first pipe segment 121 and the second pipe segment 122.

[0051] In this embodiment, the pressure sensing device 130 is a vacuum gauge. A vacuum gauge is an instrument for measuring vacuum or air pressure. It typically measures air pressure by utilizing changes in a certain physical effect under different air pressures. Exemplarily, this vacuum gauge can be a Pirani gauge, a hot cathode ionization gauge, or a cold cathode ionization gauge. It should be noted that the pressure sensing device 130 can also be any other pressure measurement device known to those skilled in the art.

[0052] In this embodiment, the semiconductor device is a physical vapor deposition (PVD) device. In addition to the wafer transfer chamber 110, connecting pipe 120, and pressure sensing device 130, the semiconductor device also includes other components known to those skilled in the art for performing PVD, which will not be described in detail here. This semiconductor device can also be other types of semiconductor devices that have a wafer transfer chamber 110 and require pressure sensing of the wafer transfer chamber 110.

[0053] See attached document Figure 2 A semiconductor device according to a second embodiment of this application will be described by way of example. The semiconductor device includes a wafer transfer chamber 210, a connecting tube 220, and a pressure sensing device 230.

[0054] The wafer transfer chamber 210 is used for transporting wafers within it. During semiconductor processing, a large number of process byproducts are generated, some of which are carried into the wafer transfer chamber 210 as the wafer moves. These byproducts in the wafer transfer chamber 210 fall to the bottom of the chamber as the wafer moves. In related technologies, the pressure sensing device 230 is typically directly connected to the bottom of the wafer transfer chamber 210. Byproducts in the wafer transfer chamber 210 may fall directly into the pressure sensing device 230, affecting the accuracy of pressure detection and potentially causing direct damage to the device.

[0055] The connecting pipe 220 includes a first pipe segment 221 extending vertically and a second pipe segment 222 extending horizontally. The first pipe segment 221 is detachably connected to the bottom of the wafer transfer chamber 210, that is, the first pipe segment 221 communicates with the interior of the wafer transfer chamber 210. The second pipe segment 222 is connected to the first pipe segment 221, that is, the second pipe segment 222 communicates with the first pipe segment 221.

[0056] The pressure detection device 230 is detachably connected to the second pipe section 222. The detection port of the pressure detection device 230 is connected to the wafer transfer chamber 210 through the connecting pipe 220 and is used to detect the pressure (i.e., air pressure) inside the wafer transfer chamber 210.

[0057] In this embodiment, the first end of the first pipe segment 221 ( Figure 2 The upper end of the first tube segment 221 is detachably connected to the bottom of the wafer transfer chamber 210. Exemplarily, the first end of the first tube segment 221 can be connected to the bottom of the wafer transfer chamber 210 using a detachable connection method commonly used in the art, such as a screw connection, bolt connection, or snap-fit ​​connection. The second end of the first tube segment 221 is closed (…). Figure 2 (Lower end of the first pipe section 221).

[0058] The first end of the second pipe section 222 ( Figure 2 The left end of the second pipe segment 222 is fixedly connected to the side wall of the first pipe segment 221 and adjacent to the second end of the first pipe segment 221. For example, "adjacent to the second end of the first pipe segment 221" can refer to a distance of 1cm-5cm or other suitable range between the end faces of the first end of the second pipe segment 222 and the second end of the first pipe segment 221. For example, the first pipe segment 221 and the second pipe segment 222 can be integrally formed, such as by injection molding or casting. In some embodiments, the first end of the second pipe segment 222 and the side wall of the first pipe segment 222 can be fixedly connected by welding. By fixing the first pipe segment 221 and the second pipe segment 222 together, airtightness can be effectively improved and the risk of leakage reduced.

[0059] Pressure sensing device 230 is detachably connected to the second end of the second pipe section 222. Figure 2 (The right end of the second pipe section 222). For example, the pressure sensing device 230 can be connected to the second end of the second pipe section 222 by a detachable connection method commonly used in the art, such as screw connection, bolt connection, snap connection, etc.

[0060] In the vertical direction (i.e., the direction of gravity), the connection point of the pressure detection device 230 and the second pipe segment 222 is not lower than the connection point of the first pipe segment 221 and the second pipe segment 222. That is, the connection point of the pressure detection device 230 and the second pipe segment 222 is higher than the connection point of the first pipe segment 221 and the second pipe segment 222, or the connection point of the pressure detection device 230 and the second pipe segment 222 is at the same height as the connection point of the first pipe segment 221 and the second pipe segment 222. When the connection point of the pressure detection device 230 and the second pipe segment 122 is higher than the connection point of the first pipe segment 221 and the second pipe segment 222, the by-products in the wafer transfer chamber 110 will only fall to the second end of the first pipe segment 221 and will have difficulty entering the second pipe segment 222 and overcoming gravity to move to the pressure detection device 130 through the second pipe segment 222. When the connection point of the pressure detection device 130 and the second pipe segment 122 is at the same height as the connection point of the first pipe segment 121 and the second pipe segment 122, the second pipe segment 122 can also extend the movement path of the by-products in the wafer transfer chamber 110 to a certain extent. The by-products in the wafer transfer chamber 110 will only fall to the second end of the first pipe segment 221 and will have difficulty entering the second pipe segment 222 and moving to the pressure detection device 130 through the second pipe segment 222.

[0061] For example, the first pipe segment 221 may extend vertically, and the second pipe segment 222 may extend horizontally. The connection point between the pressure sensing device 230 and the second pipe segment 222 is at the same height as the connection point between the first pipe segment 221 and the second pipe segment 222. In some other embodiments, the first pipe segment 221 may extend vertically, and the second pipe segment 222 may extend in an inclined direction. The angle between the second pipe segment 222 and the first pipe segment 221 may be less than 90°, so that the connection point between the pressure sensing device 130 and the second pipe segment 222 is higher than the connection point between the first pipe segment 121 and the second pipe segment 222.

[0062] According to the semiconductor device of the second embodiment of this application, the pressure detection device 230 is connected to the wafer transfer chamber 210 through the connecting pipe 220. The connecting pipe 220 has a first pipe segment 221 and a second pipe segment 222 connected to each other. The first end of the second pipe segment 222 is fixedly connected to the side wall of the first pipe segment 221 and adjacent to the second end of the first pipe segment 221. The first pipe segment 221 and the second pipe segment 222 are detachably connected to the wafer transfer chamber 210 and the pressure detection device 230, respectively. In the vertical direction (i.e., the direction of gravity), the connection point of the pressure detection device 230 and the second pipe segment 222 is not lower than the connection point of the first pipe segment 221 and the second pipe segment 222. Therefore, on the one hand, byproducts in the wafer transmission chamber 210 will only fall to the second end of the first tube section 221, and are unlikely to enter the second tube section 222, let alone the pressure detection device 230. This can effectively improve the accuracy of the pressure detection device 230 and its service life, reduce the replacement frequency and cost of the pressure detection device 230, reduce the damage to equipment operating time caused by replacing the pressure detection device 230, and thus improve equipment productivity. On the other hand, the connecting tube 220 can be periodically removed to clean the byproducts inside, avoiding the accumulation of too many byproducts in the connecting tube 220, which would affect the accuracy of the pressure detection device 230.

[0063] In this embodiment, the pressure sensing device 230 is a vacuum gauge. A vacuum gauge is an instrument for measuring vacuum or air pressure. It typically measures air pressure by utilizing changes in a certain physical effect under different air pressures. Exemplarily, this vacuum gauge can be a Pirani gauge, a hot cathode ionization gauge, or a cold cathode ionization gauge. It should be noted that the pressure sensing device 230 can also be any other pressure measurement device known to those skilled in the art.

[0064] In this embodiment, the semiconductor device is a physical vapor deposition (PVD) device. In addition to the wafer transfer chamber 210, connecting pipe 220, and pressure sensing device 230, the semiconductor device also includes other components known to those skilled in the art for performing PVD, which will not be described in detail here. This semiconductor device can also be other types of semiconductor devices that have a wafer transfer chamber 210 and require pressure sensing of the wafer transfer chamber 210.

[0065] See attached document Figure 3 A semiconductor device according to a third embodiment of this application will be described exemplarily. The semiconductor device includes a wafer processing chamber 310, a vacuum pump 320, a vacuum line 330, a connecting pipe 340, and a pressure sensing device 350.

[0066] The wafer processing chamber 310 is used to provide a wafer with semiconductor processing technology, such as semiconductor processing technology such as coating process.

[0067] Vacuum pump 320 is connected to wafer processing chamber 310 via vacuum line 330; that is, both ends of vacuum line 330 are connected to wafer processing chamber 310 and vacuum pump 320, respectively. When vacuum pump 320 is operating, it can evacuate wafer processing chamber 310 through vacuum line 330 to create a vacuum environment in wafer processing chamber 310. In this embodiment, both ends of vacuum line 330 are detachably connected to wafer processing chamber 310 and vacuum pump 320, respectively.

[0068] During semiconductor manufacturing processes, a large number of process byproducts are generated in the wafer processing chamber 310. Some of these byproducts enter the vacuum line 330 and adhere to its sidewalls. In related technologies, the pressure sensing device 350 is typically directly connected to the sidewall of the vacuum line 330. The byproducts in the vacuum line 330 may accumulate at the sensing port of the pressure sensing device 350, affecting the accuracy of its pressure detection.

[0069] The connecting pipe 340 includes a first pipe segment 341 extending in a first direction and a second pipe segment 342 extending in a second direction. The first pipe segment 341 is connected to the vacuum line 330, that is, the first pipe segment 341 is in communication with the vacuum line 330. The second pipe segment 342 is connected to the first pipe segment 341, that is, the second pipe segment 342 is in communication with the first pipe segment 341.

[0070] The pressure detection device 350 is detachably connected to the second pipe section 342. The detection port of the pressure detection device 350 is connected to the wafer processing chamber 310 through the connecting pipe 340 and the vacuum line 330, and is used to detect the pressure (i.e., air pressure) inside the wafer processing chamber 310.

[0071] In the vertical direction (i.e., the direction of gravity), the connection point of the pressure detection device 350 and the second pipe segment 122 is not lower than the connection point of the first pipe segment 341 and the second pipe segment 342. That is, the connection point of the pressure detection device 350 and the second pipe segment 342 can be higher than the connection point of the first pipe segment 341 and the second pipe segment 342, or the connection point of the pressure detection device 350 and the second pipe segment 342 can be at the same height as the connection point of the first pipe segment 341 and the second pipe segment 342. When the connection point of the pressure detection device 350 and the second pipe section 342 is higher than the connection point of the first pipe section 341 and the second pipe section 342, the byproducts from the vacuum pipeline 330 will only enter the first pipe section 341 in small quantities and will be difficult to overcome gravity to move through the second pipe section 342 to the pressure detection device 350. When the connection point of the pressure detection device 350 and the second pipe section 342 is at the same height as the connection point of the first pipe section 341 and the second pipe section 342, the second pipe section 342 can also extend the movement path of the byproducts in the vacuum pipeline 330 to a certain extent, making it difficult for them to directly enter the pressure detection device 350.

[0072] According to the semiconductor device of the third embodiment of this application, the pressure detection device 350 is connected to the vacuum line 330 through the connecting pipe 340. The connecting pipe 340 has a first pipe segment 341 and a second pipe segment 342 connected to each other. The first pipe segment 341 and the second pipe segment 342 are respectively connected to the vacuum line 330 and the pressure detection device 350. In the vertical direction (i.e., the direction of gravity), the connection point of the pressure detection device 350 and the second pipe segment 342 is not lower than the connection point of the first pipe segment 341 and the second pipe segment 342. Therefore, on the one hand, byproducts in the vacuum line 330 will only enter the first section 341 in small quantities, and are unlikely to further enter the second section 342, and are unlikely to adhere to and accumulate at the detection port of the pressure detection device 350. This can effectively improve the accuracy of the pressure detection of the pressure detection device 350 and the service life of the pressure detection device 350, reduce the replacement frequency and cost of the pressure detection device 350, reduce the damage to equipment operation time caused by replacing the pressure detection device 350, and thus improve equipment productivity. On the other hand, the vacuum line 330 and the connecting pipe 340 as a whole can be disassembled periodically to clean the byproducts in them, avoiding the accumulation of too many byproducts in the connecting pipe 340, which would affect the accuracy of the pressure detection of the pressure detection device 350.

[0073] In this embodiment, the first end of the first pipe segment 341 ( Figure 3 The left end of the first pipe section 341 is fixedly connected to the side wall of the vacuum line 330. The second end of the first pipe section 341 ( Figure 3 The right end of the first pipe section 341 is fixedly connected to the first end of the second pipe section 342. Figure 3(Lower end of the second pipe section 342). For example, the vacuum line 330, the first pipe section 341, and the second pipe section 342 can be integrally formed, such as by injection molding or casting. In some embodiments, the first pipe section 341 and the second pipe section 342 can be integrally formed, and the first end of the first pipe section 341 can be fixedly connected to the side wall of the vacuum line 330 by welding. In some embodiments, the first end of the first pipe section 341 can be fixedly connected to the side wall of the vacuum line 330 by welding, and the second end of the first pipe section 341 can be fixedly connected to the first end of the second pipe section 342 by welding. By fixing the vacuum line 330, the first pipe section 341, and the second pipe section 342 together, airtightness can be effectively improved, and the risk of leakage can be reduced.

[0074] Pressure sensing device 350 is detachably connected to the second end of the second pipe section 342. Figure 3 (The upper end of the second pipe segment 342). For example, the pressure sensing device 350 can be connected to the second end of the second pipe segment 342 by a detachable connection method commonly used in the art, such as screw connection, bolt connection, or snap connection. In some other embodiments, the pressure sensing device 350 can also be detachably connected to the side wall of the second pipe segment 342 and adjacent to the second end of the second pipe segment 342.

[0075] In this embodiment, the first direction is horizontal and the second direction is vertical. That is, the first pipe segment 341 extends horizontally and the second pipe segment 342 extends vertically. The connection point between the pressure detection device 350 and the second pipe segment 342 is higher than the connection point between the first pipe segment 341 and the second pipe segment 342. That is, the pressure detection device 350 is connected to the upper end of the second pipe segment 342, and the first pipe segment 341 is connected to the lower end of the second pipe segment 342. Therefore, byproducts that enter the first pipe segment 341 in small quantities from the vacuum pipe 330 are difficult to move vertically upwards and overcome gravity to move through the second pipe segment 342 to the pressure detection device 350. Thus, byproducts can be effectively prevented from adhering and accumulating at the detection port of the pressure detection device 350. In some other embodiments, the first direction can be an inclined direction, with the second end of the first pipe segment 341 being higher than the first end of the first pipe segment 341. The second direction can be a horizontal direction, that is, the connection point of the pressure detection device 350 and the second pipe segment 342 is at the same height as the connection point of the first pipe segment 341 and the second pipe segment 342.

[0076] In this embodiment, the pressure sensing device 350 is a vacuum gauge. A vacuum gauge is an instrument for measuring vacuum or air pressure. It typically measures air pressure by utilizing changes in a certain physical effect under different air pressures. Exemplarily, this vacuum gauge can be a Pirani gauge, a hot cathode ionization gauge, or a cold cathode ionization gauge. It should be noted that the pressure sensing device 350 can also be any other pressure measurement device known to those skilled in the art.

[0077] In this embodiment, the semiconductor device is a physical vapor deposition (PVD) device. In addition to the wafer processing chamber 310, vacuum pump 320, vacuum tubing 330, connecting pipes 340, and pressure sensing device 350, the semiconductor device also includes other components known to those skilled in the art for performing PVD, which will not be described in detail here. This semiconductor device can also be other types of semiconductor devices that have a wafer processing chamber 310, vacuum tubing 330, and vacuum pump 320, and require pressure detection of the wafer transfer chamber.

[0078] Although exemplary embodiments have been described herein with reference to the accompanying drawings, it should be understood that the above exemplary embodiments are merely illustrative and are not intended to limit the scope of this application. Various changes and modifications can be made therein by those skilled in the art without departing from the scope and spirit of this application. All such changes and modifications are intended to be included within the scope of this application as claimed in the appended claims.

[0079] Numerous specific details are set forth in the specification provided herein. However, it will be understood that embodiments of this application may be practiced without these specific details. In some instances, well-known methods, structures, and techniques have not been shown in detail so as not to obscure the understanding of this specification.

[0080] Similarly, it should be understood that, in order to streamline this application and aid in understanding one or more of the various aspects of the invention, features of this application may sometimes be grouped together in a single embodiment, figure, or description thereof in the description of exemplary embodiments of this application. However, this approach should not be construed as reflecting an intention that the claimed application requires more features than are expressly recited in each claim. Rather, as reflected in the corresponding claims, the inventive point lies in solving the corresponding technical problem with fewer features than all of those in a single disclosed embodiment. Therefore, the claims following the detailed description are hereby expressly incorporated into that detailed description, wherein each claim itself is a separate embodiment of this application.

[0081] Those skilled in the art will understand that, apart from the mutual exclusion of features, all features disclosed in this specification (including the accompanying claims, abstract, and drawings) and all processes or elements of any method or apparatus so disclosed can be combined in any combination. Unless otherwise expressly stated, each feature disclosed in this specification (including the accompanying claims, abstract, and drawings) may be replaced by an alternative feature serving the same, equivalent, or similar purpose.

[0082] Furthermore, those skilled in the art will understand that although some embodiments described herein include certain features but not others included in other embodiments, combinations of features from different embodiments are intended to be within the scope of this application and form different embodiments. For example, in the claims, any one of the claimed embodiments can be used in any combination.

[0083] It should be noted that the above embodiments are illustrative of this application and not restrictive of this application, and that those skilled in the art can devise alternative embodiments without departing from the scope of the appended claims.

Claims

1. A semiconductor device, characterized in that, include: Wafer transfer chamber; A connecting pipe fitting, the connecting pipe fitting comprising a first pipe segment extending along a first direction and a second pipe segment extending along a second direction, the first pipe segment being detachably connected to the bottom of the wafer transmission chamber, and the second pipe segment being connected to the first pipe segment; A pressure detection device, detachably connected to the second pipe section, is used to detect the pressure inside the wafer transfer chamber; In the vertical direction, the connection point between the pressure detection device and the second pipe segment is not lower than the connection point between the first pipe segment and the second pipe segment.

2. The semiconductor device according to claim 1, characterized in that, The first end of the first tube segment is detachably connected to the bottom of the wafer transfer chamber, the second end of the first tube segment is connected to the first end of the second tube segment, and the pressure detection device is detachably connected to the second end of the second tube segment.

3. The semiconductor device according to claim 1, characterized in that, The first end of the first tube segment is detachably connected to the bottom of the wafer transfer chamber, the second end of the first tube segment is closed, the first end of the second tube segment is fixedly connected to the side wall of the first tube segment and adjacent to the second end of the first tube segment, and the pressure detection device is detachably connected to the second end of the second tube segment.

4. The semiconductor device according to claim 1, characterized in that, The pressure detection device is a vacuum gauge.

5. The semiconductor device according to any one of claims 1-4, characterized in that, The semiconductor device is a physical vapor deposition device.

6. A semiconductor device, characterized in that, include: Wafer processing chamber; Vacuum pump; A vacuum pipeline, the two ends of which are connected to the wafer processing chamber and the vacuum pump, respectively; A connecting pipe fitting, the connecting pipe fitting comprising a first pipe segment extending in a first direction and a second pipe segment extending in a second direction, the first pipe segment being connected to the vacuum pipeline, and the second pipe segment being connected to the first pipe segment; A pressure detection device, detachably connected to the second pipe section, is used to detect the pressure inside the wafer processing chamber; In the vertical direction, the connection point between the pressure detection device and the second pipe segment is not lower than the connection point between the first pipe segment and the second pipe segment.

7. The semiconductor device according to claim 6, characterized in that, The first end of the first pipe segment is fixedly connected to the side wall of the vacuum pipeline, the second end of the first pipe segment is fixedly connected to the first end of the second pipe segment, and the pressure detection device is detachably connected to the second end of the second pipe segment.

8. The semiconductor device according to claim 7, characterized in that, The first direction is horizontal, and the second direction is vertical.

9. The semiconductor device according to claim 6, characterized in that, The pressure detection device is a vacuum gauge.

10. The semiconductor device according to any one of claims 6-9, characterized in that, The semiconductor device is a physical vapor deposition device.

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