Light emitting device
By using consistent chip materials and wavelength conversion structures, the problems of inconsistent display and reliability of multi-colored LED light sources have been solved, achieving efficient color conversion and improved stability, and simplifying the manufacturing process.
Patent Information
- Application Number
- CN202422779973.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-14
- Publication Date
- 2025-12-02
- Estimated Expiration
- 2034-11-14
AI Technical Summary
In existing technologies, the display effects of multi-colored LED light sources are inconsistent, red LED chips have poor reliability and high cost, and traditional packaging processes have low yields, making it difficult to meet the development needs of Mini LED and Micro LED.
At least two chips made of the same material are used as light-emitting units, and wavelength conversion structures are fabricated on the light-emitting units. Color conversion is achieved by filling the wavelength conversion material through the isolation groove, which simplifies the fabrication process and improves stability.
It improves the display effect and long-term stability of multi-colored light-emitting devices, simplifies the manufacturing process, increases yield, and reduces workload.
Smart Images
Figure CN223626280U_ABST
Abstract
Description
Technical Field
[0001] This utility model belongs to the field of semiconductor device technology, specifically relating to a light-emitting device. Background Technology
[0002] LED light sources are currently the most widely used light-emitting devices. They are mostly made using array-type flip-chip LEDs, which is a technical solution to achieve pixelated light sources and is widely used in light-emitting devices such as displays and automotive headlights.
[0003] In existing technologies, multi-color LED light sources involve transferring red, green, and blue LED chips onto a separate substrate for encapsulation. Each pixel requires the transfer of all three colors, resulting in a complex transfer process and low yield. Furthermore, because three different emitting colors are needed, the red, green, and blue LED chips must be fabricated on different epitaxial structures, leading to poor consistency in the displayed red, green, and blue colors after integration. In particular, in existing technologies, red LED chips are based on AlGaInP material, which differs from the GaN material used in blue and green chips, severely impacting the consistency of display performance. Simultaneously, existing red LED chips suffer from poor reliability and high cost, necessitating the discovery of an effective alternative to AlGaInP-based red LED chips.
[0004] Furthermore, as LED chips shrink from the size of Mini LEDs (>100μm) to the size of Micro LEDs (<100μm), the yield of traditional Pick & Place packaging processes decreases rapidly. This necessitates the development of new matrix transfer processes, which requires significant time and cost investment and severely hinders the further development of multi-colored light-emitting devices.
[0005] Therefore, it is necessary to provide a light-emitting device to address the aforementioned technical problems. Utility Model Content
[0006] The purpose of this invention is to provide a light-emitting device that can improve the display effect and long-term stability of multi-color light-emitting devices.
[0007] To achieve the above objectives, the technical solution provided by an embodiment of this utility model is as follows:
[0008] A light-emitting device, the light-emitting device comprising:
[0009] A substrate, wherein a first electrode and a second electrode are provided on the upper surface of the substrate;
[0010] At least one light-emitting unit, the light-emitting unit comprising at least two spaced chips, each chip comprising a P electrode and an N electrode, the P electrode and the N electrode being electrically connected to a first electrode and a second electrode respectively via an ACF anisotropic conductive film;
[0011] An isolation conversion unit is disposed above the light-emitting unit. The isolation conversion unit includes an isolation layer and a wavelength conversion structure. The isolation layer has an isolation groove extending through the upper and lower surfaces of the isolation layer above each chip. At least a portion of the isolation groove is filled with the wavelength conversion structure.
[0012] In one embodiment, the substrate is a silicon-based thin-film transistor substrate.
[0013] In one embodiment, the projections of the P electrode and the first electrode on the upper surface of the substrate at least partially overlap, and the projections of the N electrode and the second electrode on the upper surface of the substrate at least partially overlap.
[0014] In one embodiment, the light-emitting unit includes a first chip, a second chip, and a third chip spaced apart. The isolation layer has a first isolation groove, a second isolation groove, and a third isolation groove that penetrate the upper and lower surfaces of the isolation layer above the first chip, the second chip, and the third chip, respectively. The first isolation groove is filled with a first wavelength conversion structure, and the second isolation groove is filled with a second wavelength conversion structure.
[0015] In one embodiment, the chip is a blue light chip, which includes at least a P-type semiconductor layer, a light-emitting semiconductor layer, and an N-type semiconductor layer. The first wavelength conversion structure is used to convert blue light into red light, and the second wavelength conversion structure is used to convert blue light into green light.
[0016] In one embodiment, the third isolation groove is filled with a third wavelength conversion structure.
[0017] In one embodiment, the chip is an ultraviolet chip, which includes at least a P-type semiconductor layer, a light-emitting semiconductor layer, and an N-type semiconductor layer. The first wavelength conversion structure is used to convert ultraviolet light into red light, the second wavelength conversion structure is used to convert ultraviolet light into green light, and the third wavelength conversion structure is used to convert ultraviolet light into blue light.
[0018] In one embodiment, the light-emitting device further includes a substrate disposed between the light-emitting unit and the isolation conversion unit, the substrate having a thickness of 5 to 150 μm.
[0019] In one embodiment, the isolation layer is a high-reflectivity adhesive layer or a silicon isolation layer.
[0020] In one embodiment, the P-type semiconductor layer is Al. x1 In y1 Ga (1-x1-y1)N layers (0≤x1≤1, 0≤y1≤1, 0≤x1+y1≤1); and / or,
[0021] The N-type semiconductor layer is Al. X2 In y2 Ga (1-x2-y2) N layers (0≤x2≤1, 0≤y2≤1, 0≤x2+y2≤1).
[0022] Compared with the prior art, the present invention has the following beneficial effects:
[0023] This invention uses at least two chips made of the same material as light-emitting units, and fabricates a wavelength conversion structure on the light-emitting units for wavelength conversion, thus obtaining a multi-colored light-emitting device. Since the chip materials and light-emitting characteristics in the light-emitting units are highly consistent, the display effect and long-term stability of the multi-colored light-emitting device are effectively improved.
[0024] This invention simplifies the fabrication process of multi-colored light-emitting devices by optimizing the preparation method, reducing workload, improving yield, and enabling convenient repair of light-emitting units. Attached Figure Description
[0025] To more clearly illustrate the technical solutions in the embodiments of this utility model or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments recorded in this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0026] Figure 1 This is a schematic diagram of the structure of the light-emitting device in Embodiment 1 of this utility model;
[0027] Figures 2a-2i This is a process flow diagram of the fabrication method of the light-emitting device in Embodiment 1 of this utility model;
[0028] Figure 3 This is a schematic diagram of the structure of the light-emitting device in Embodiment 2 of this utility model;
[0029] Figure 4 This is a schematic diagram of the structure of the light-emitting device in Embodiment 3 of this utility model.
[0030] Explanation of key figure labels:
[0031] 1 - Substrate, 111 - First electrode, 112 - Second electrode, 201 - Substrate, 202 - Epitaxial structure, 2031 - P electrode, 2032 - N electrode, 21 - First chip, 22 - Second chip, 22 - Third chip, 3 - ACF anisotropic conductive film, 31 - Conductive particles, 4 - Isolation layer, 41 - First isolation groove, 42 - Second isolation groove, 43 - Third isolation groove, 51 - First wavelength conversion structure, 52 - Second wavelength conversion structure, 53 - Third wavelength conversion structure. Detailed implementation mode
[0032] In order to enable those skilled in the art to better understand the technical solutions in the present invention, the following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without making creative efforts shall fall within the protection scope of the present invention.
[0033] The present invention discloses a light-emitting device, including:
[0034] A substrate, on the upper surface of which a first electrode and a second electrode are provided;
[0035] At least one light-emitting unit, the light-emitting unit includes at least two chips distributed at intervals, the chips include a P electrode and an N electrode, and the P electrode and the N electrode are electrically connected to the first electrode and the second electrode respectively through an ACF anisotropic conductive film; [[ID=^{16]]
[0036] An isolation conversion unit, arranged above the light-emitting unit, the isolation conversion unit includes an isolation layer and a wavelength conversion structure, the isolation layer is provided with an isolation groove penetrating the upper surface and the lower surface above each chip, and at least part of the isolation groove is filled with a wavelength conversion structure. [[ID=^{18]] <^{
[0037] The following further illustrates the present invention with specific examples.
[0038] Embodiment 1:
[0039] As shown in the figure, the light-emitting device in this embodiment includes: Figure 1
[0040] Substrate 1, on the upper surface of substrate 1, a first electrode 111 and a second electrode 112 are provided;
[0041] At least one light-emitting unit, the light-emitting unit includes at least two chips spaced apart, the chips include a P electrode 2031 and an N electrode 2032, the P electrode 2031 and the N electrode 2032 are electrically connected to the first electrode 111 and the second electrode 112 respectively through an ACF (Anisotropic Conductive Film) heterogeneous conductive film 3.
[0042] An isolation conversion unit is located above the light-emitting unit. The isolation conversion unit includes an isolation layer 4 and a wavelength conversion structure. The isolation layer 4 has an isolation groove that penetrates the upper and lower surfaces of the isolation layer above each chip. At least part of the isolation groove is filled with the wavelength conversion structure.
[0043] In this embodiment, substrate 1 is a silicon-based thin-film transistor substrate.
[0044] For example, the light-emitting unit in this embodiment includes three spaced-apart first chips 21, second chips 22 and third chips 23.
[0045] Specifically, in this embodiment, the first chip 21, the second chip 22, and the third chip 23 are the same type of chip, all being blue light chips. Each chip includes at least a P-type semiconductor layer, a light-emitting semiconductor layer, an N-type semiconductor layer, a P-electrode 2031, and an N-electrode 2032. The material of the P-type semiconductor layer is Al. x1 In y1 Ga (1-x1-y1) Semiconductor materials of type N (0≤x1≤1, 0≤y1≤1, 0≤x1+y1≤1), but not limited to these. The material of the N-type semiconductor layer is Al. X2 In y2 Ga (1-x2-y2) The semiconductor material is N (0≤x2≤1, 0≤y2≤1, 0≤x2+y2≤1), but is not limited to this. The P electrode 2031 is electrically connected to the P-type semiconductor layer, and the N electrode 2032 is electrically connected to the N-type semiconductor layer.
[0046] For example, in this embodiment, the ACF anisotropic conductive film 3 is a resin-based material containing conductive particles 31. The P electrode 2031 and the N electrode 2032 are electrically connected to the first electrode 111 and the second electrode 112 respectively through the conductive particles 31. The projections of the P electrode 2031 and the first electrode 111 on the upper surface of the substrate 1 at least partially overlap, and the projections of the N electrode 2032 and the second electrode 112 on the upper surface of the substrate 1 at least partially overlap.
[0047] Combination Figure 2hAs shown, in this embodiment, the isolation layer 4 has a first isolation groove 41, a second isolation groove 42, and a third isolation groove 43 that penetrate the upper and lower surfaces of the isolation layer 4 above the first chip 21, the second chip 22, and the third chip 23, respectively. The isolation layer 4 is made of opaque materials such as a high-reflectivity adhesive layer or a silicon isolation layer to prevent light crosstalk. In this embodiment, an opaque high-reflectivity adhesive layer with reflective properties is preferred.
[0048] Understandably, the number of isolation trenches must correspond to the number of chips, and each chip must have an isolation trench that penetrates the upper and lower surfaces of the isolation layer.
[0049] Furthermore, the first isolation trench 41 is filled with a first wavelength conversion structure 51, and the second isolation trench 42 is filled with a second wavelength conversion structure 52. The first wavelength conversion structure 51 is used to convert blue light into red light, and the second wavelength conversion structure 52 is used to convert blue light into green light. The wavelength conversion structure can be a phosphor or other color conversion material; in this example, a phosphor is preferred. The phosphor is bonded to the side of the chip that does not have the P electrode 2031 and N electrode 2032.
[0050] Furthermore, in this embodiment, a substrate 201 is provided between the light-emitting unit and the isolation conversion unit. The thickness of the substrate 201 can be adjusted according to actual needs, generally ranging from 5 to 150 μm. For example, the substrate 201 in this embodiment is a sapphire substrate.
[0051] The method for fabricating the light-emitting device in this embodiment includes the following steps:
[0052] S1: Reference Figure 2a As shown, a substrate 1 is provided, and a first electrode 111 and a second electrode 112 are formed on the upper surface of the substrate.
[0053] Specifically, in this embodiment, the substrate 1 is a silicon-based thin-film transistor substrate, and a plurality of first electrodes 111 and second electrodes 112 are fabricated on the substrate 1.
[0054] S2: Provide a wafer, the wafer including a first surface and a second surface disposed opposite to each other, and prepare a light-emitting unit on the first surface of the wafer, the light-emitting unit including at least two chips spaced apart, the chips including a P electrode 2301 and an N electrode 2302.
[0055] Specifically, this step includes the following steps:
[0056] 1. Reference Figure 2b As shown, a substrate 201 is provided, and an epitaxial structure 202 is grown on the substrate 201 to obtain a wafer. In this embodiment, the substrate 201 is preferably a sapphire substrate, and the epitaxial structure 202 includes at least a P-type semiconductor layer, a light-emitting semiconductor layer, and an N-type semiconductor layer.
[0057] 2. Refer to Figure 2c As shown, the epitaxial structure 202 is etched to form multiple chips arranged in an array. The epitaxial structure 202 between adjacent chips is etched clean, so that each chip is completely separated and not affected by each other.
[0058] 3. Refer to Figure 2d As shown, a P electrode 2031 electrically connected to the P-type semiconductor layer and an N electrode 2032 electrically connected to the N-type semiconductor layer are prepared.
[0059] 4. The chips are grouped to form multiple light-emitting units, and each light-emitting unit includes at least two adjacent and separated chips.
[0060] Exemplarily, the light-emitting unit in this embodiment includes a first chip 21, a second chip 22 and a third chip 23 which are spaced apart.
[0061] S3: Refer to Figure 2e As shown, the chips are encapsulated on the upper surface of the substrate 1 through an ACF anisotropic conductive film 3, and the P electrode 2301 and the N electrode 2302 are electrically connected to the first electrode 111 and the second electrode 112 respectively through the ACF anisotropic conductive film 3.
[0062] Specifically, first, an ACF anisotropic conductive film 3 is prepared on the upper surface of the substrate 1, and then the chips are flip-chip encapsulated on the upper surface of the substrate 1. During the encapsulation process, the entire wafer needs to be aligned with the substrate 1, and the P electrode 2031 and the N electrode 2032 on each chip are aligned with the first electrode 111 and the second electrode 112 respectively. The P electrode 2031 and the N electrode 2032 are electrically connected to the first electrode 111 and the second electrode 112 respectively through the conductive particles 31 in the ACF anisotropic conductive film 3.
[0063] Refer to Figure 2f As shown, after the chips are flip-chip encapsulated on the upper surface of the substrate 1, it further includes thinning the substrate 201, and the thickness of the substrate 201 is adjusted according to the overall requirements of the light-emitting device, generally 5 - 150 μm.
[0064] S4: An isolation conversion unit is prepared above the second surface of the wafer. The isolation conversion unit includes an isolation layer 4 and a wavelength conversion structure. The isolation layer 4 is provided with isolation grooves penetrating the upper surface and the lower surface above each chip, and at least part of the isolation grooves are filled with the wavelength conversion structure.
[0065] Specifically, this step includes the following steps:
[0066] 1. Refer to Figure 2g As shown, an isolation layer 4 is prepared on the surface of the substrate 201 opposite to the epitaxial structure 202, and the isolation layer 4 is preferably a high-reflection glue layer.
[0067] 2. As shown in Figure 2h , perform photolithography and etching on the isolation layer 4 to form first isolation grooves 41, second isolation grooves 42, and third isolation grooves 43 that penetrate the upper and lower surfaces of the isolation layer 4 above the first chip 21, the second chip 22, and the third chip 23, respectively.
[0068] 3. As shown in Figure 2i , fill the first wavelength conversion structure 51 in the first isolation groove 41 and fill the second wavelength conversion structure 52 in the second isolation groove 42. In this embodiment, the first wavelength conversion structure 51 is used to convert blue light into red light, and the second wavelength conversion structure 52 is used to convert blue light into green light.
[0069] S5. Cut the packaged structure after preparing the isolation unit to form a plurality of light-emitting devices, and each light-emitting device includes at least one light-emitting unit.
[0070] Specifically, after completing the preparation of the isolation unit, the packaged structure can be cut according to actual needs to form a plurality of light-emitting devices, and each light-emitting device can include one light-emitting unit or multiple light-emitting units.
[0071] Embodiment 2:
[0072] As shown in Figure 3 , the structure and preparation method of the light-emitting device in this embodiment are substantially the same as those in Embodiment 1. The difference is that the chip in this embodiment is an ultraviolet chip, and a third wavelength conversion structure 53 is filled in the third groove 43 above the third chip 23. In addition, in this embodiment, the first wavelength conversion structure 51 is used to convert ultraviolet light into red light, the second wavelength conversion structure 52 is used to convert ultraviolet light into green light, and the third wavelength conversion structure 53 is used to convert ultraviolet light into blue light.
[0073] Embodiment 3: <000017The structure and fabrication method of the light-emitting device in this embodiment are largely the same as those in Embodiment 1. The difference is that the isolation layer in this embodiment is a silicon isolation layer. Simultaneously, during wafer fabrication, silicon is directly used as the substrate. After bonding the entire wafer to the substrate, the silicon substrate also needs to be thinned. However, there is no need to fabricate an additional isolation layer, such as a high-reflectivity adhesive layer, on the silicon substrate. Instead, the silicon substrate above each chip is directly etched to form isolation trenches penetrating the upper and lower surfaces of the silicon substrate. The silicon substrate with the isolation trenches is directly used as the isolation layer, and the isolation trenches are filled with color conversion materials such as quantum dot layers or phosphor sheets.
[0077] As can be seen from the above technical solution, this utility model has the following beneficial effects:
[0078] This invention uses at least two chips made of the same material as light-emitting units, and fabricates a wavelength conversion structure on the light-emitting units for wavelength conversion, thus obtaining a multi-colored light-emitting device. Since the chip materials and light-emitting characteristics in the light-emitting units are highly consistent, the display effect and long-term stability of the multi-colored light-emitting device are effectively improved.
[0079] This invention simplifies the fabrication process of multi-colored light-emitting devices by optimizing the preparation method, reducing workload, improving yield, and enabling convenient repair of light-emitting units.
[0080] It will be apparent to those skilled in the art that this invention is not limited to the details of the exemplary embodiments described above, and that it can be implemented in other specific forms without departing from the spirit or essential characteristics of this invention. Therefore, the embodiments should be considered illustrative and non-limiting in all respects, and the scope of this invention is defined by the appended claims rather than the foregoing description. Thus, it is intended that all variations falling within the meaning and scope of equivalents of the claims be included within this invention. No reference numerals in the claims should be construed as limiting the scope of the claims.
[0081] Furthermore, it should be understood that although this specification describes embodiments, not every embodiment contains only one independent technical solution. This narrative style is merely for clarity. Those skilled in the art should consider the specification as a whole, and the technical solutions in each embodiment can also be appropriately combined to form other embodiments that can be understood by those skilled in the art.
Claims
1. A light-emitting device, characterized in that, The light-emitting device includes: A substrate, wherein a first electrode and a second electrode are provided on the upper surface of the substrate; At least one light-emitting unit, the light-emitting unit comprising at least two spaced chips, each chip comprising a P electrode and an N electrode, the P electrode and the N electrode being electrically connected to a first electrode and a second electrode respectively via an ACF anisotropic conductive film; An isolation conversion unit is disposed above the light-emitting unit. The isolation conversion unit includes an isolation layer and a wavelength conversion structure. The isolation layer has an isolation groove extending through the upper and lower surfaces of the isolation layer above each chip. At least a portion of the isolation groove is filled with the wavelength conversion structure.
2. The light-emitting device according to claim 1, characterized in that, The substrate is a silicon-based thin-film transistor substrate.
3. The light-emitting device according to claim 1, characterized in that, The projections of the P electrode and the first electrode on the upper surface of the substrate at least partially overlap, and the projections of the N electrode and the second electrode on the upper surface of the substrate at least partially overlap.
4. The light-emitting device according to claim 1, characterized in that, The light-emitting unit includes a first chip, a second chip, and a third chip spaced apart. The isolation layer has a first isolation groove, a second isolation groove, and a third isolation groove that penetrate the upper and lower surfaces of the isolation layer above the first chip, the second chip, and the third chip, respectively. The first isolation groove is filled with a first wavelength conversion structure, and the second isolation groove is filled with a second wavelength conversion structure.
5. The light-emitting device according to claim 4, characterized in that, The chip is a blue light chip, which includes at least a P-type semiconductor layer, a light-emitting semiconductor layer and an N-type semiconductor layer. The first wavelength conversion structure is used to convert blue light into red light, and the second wavelength conversion structure is used to convert blue light into green light.
6. The light-emitting device according to claim 4, characterized in that, The third isolation slot is filled with a third wavelength conversion structure.
7. The light-emitting device according to claim 6, characterized in that, The chip is an ultraviolet chip, which includes at least a P-type semiconductor layer, a light-emitting semiconductor layer and an N-type semiconductor layer. The first wavelength conversion structure is used to convert ultraviolet light into red light, the second wavelength conversion structure is used to convert ultraviolet light into green light, and the third wavelength conversion structure is used to convert ultraviolet light into blue light.
8. The light-emitting device according to claim 1, characterized in that, The light-emitting device further includes a substrate disposed between the light-emitting unit and the isolation conversion unit, the substrate having a thickness of 5~150μm.
9. The light-emitting device according to claim 1, characterized in that, The isolation layer is a high-reflectivity adhesive layer or a silicon isolation layer.