Discrete semiconductor device packaging structure of integrated radiator

Abstract

The utility model provides a discrete semiconductor device packaging structure of an integrated radiator. A metal frame comprises pins and a slide holder which are connected with each other. The chip connection layer fixes the semiconductor chip at the upper end of the slide holder. One end of the metal bonding assembly is connected with the chip, and the other end of the metal bonding assembly is connected with the pin. And the radiator connecting layer fixes the radiator at the lower end of the slide holder. The radiator comprises a substrate and a plurality of radiating parts, and the substrate is located in the plastic package body. The substrate is fixed at the lower end of the radiator connecting layer, the radiating components and the substrate are integrated, and a gap is arranged between every two adjacent radiating components. The plastic package body wraps the outer sides of the metal frame, the chip connecting layer, the chip, the metal bonding assembly, the radiator connecting layer and the radiator substrate, the pins protrude out of the plastic package body, and the radiating part protrudes out of the plastic package body.

Description

TECHNICAL FIELD

[0001] The utility model relates to the field of semiconductor technology especially relates to a discrete semiconductor device package structure of integrated heat sink. BACKGROUND

[0002] With the continuous increase of the demand for AI computing power in various industries, the energy consumption of data centers will also grow rapidly, thus requiring more efficient and stable power conversion systems. Designing servers with larger power, higher conversion efficiency and higher power density has become an indispensable condition to meet this demand. At the same time, the increase in power density requires the cooling solution of the entire system to be more efficient and compact. Immersion cooling solution is a representative of advanced heat dissipation technology, which uses insulation, low boiling point, environmentally friendly and non-toxic liquid as refrigerant, and all electronic components in the power module are immersed in the refrigerant. The heat dissipation device directly contacts the refrigerant, and the fluid circulation carries away the heat to realize efficient heat exchange and reduce and control the working temperature of the components. This heat dissipation scheme not only meets the application requirements of high power density scenarios, but also greatly reduces the energy consumption and operating cost of data centers, and has been applied on a large scale in many large data centers. The packaging shape of traditional high-power discrete semiconductor devices contains a planar heat dissipation substrate exposed outside the plastic package, and the reverse side is used as part of the metal frame carrier for chip mounting and is wrapped by plastic sealing material. In specific applications, this planar heat dissipation substrate is generally connected to an external heat sink through a thermal medium material to reduce the system thermal resistance. This heat dissipation method requires relatively complex assembly process and larger system volume, and the overall heat dissipation efficiency is low, the long-term working reliability is unstable, and it is generally used in traditional forced air cooling or natural convection cooling power supply systems, which is not suitable for server power supply using immersion liquid cooling technology.

[0003] As shown in Figure 1 The semiconductor device 10 is provided with a metal frame carrier 11 for mounting a chip 12, and the metal frame carrier 11 and the chip 12 are wrapped by a plastic package 13. The existing semiconductor device 10 is also provided with a planar heat dissipation substrate 14 exposed outside the plastic package 13, which is the opposite side of the metal frame carrier 11 to the mounted chip 12, used for heat dissipation operation of the chip 12. However, the efficiency of heat dissipation through the heat dissipation substrate 14 directly is low, and it cannot guarantee the reliability of the chip 12 during work for a long time; therefore, in system applications, it is generally necessary to connect the heat dissipation substrate 14 with an external heat sink to realize more effective heat dissipation and ensure that the junction temperature of the chip 12 during work does not exceed the safety range, and this heat dissipation method is complex in assembly, high in cost and poor in long-term reliability.

[0004] Therefore, it is necessary to provide a discrete semiconductor device package structure with integrated heat sink to solve the above problems. Utility model content

[0005] The utility model provides a discrete semiconductor device packaging structure of integrated radiator effectively solves the low heat dissipation efficiency of existing semiconductor device, assembly is complicated, high cost and long -term reliability problem of poor.

[0006] The utility model provides a discrete semiconductor device packaging structure of integrated radiator, it includes:

[0007] Metal frame, it includes pin and carrier stage who are connected to each other;

[0008] Chip connecting layer, set up in the upper end of carrier stage, fix chip on the upper end of carrier stage;

[0009] Chip, be located in the upper end of chip connecting layer, with chip connecting layer is connected;

[0010] Metallic bonding assembly, one end is connected with chip, and the other end is connected with pin;

[0011] Radiator connecting layer, set up in the lower end of carrier stage, fix radiator on the lower end of carrier stage;

[0012] Radiator, including base plate and multiple heat dissipation components, the base plate is located in the inside of plastic package body, the base plate is connected to the lower end of radiator connecting layer, the heat dissipation component with the base plate is an entirety, and the interval is provided between two adjacent heat dissipation components;

[0013] Plastic package body, it is wrapped in the outside of metal frame, chip connecting layer, chip, metallic bonding assembly, radiator connecting layer and radiator base plate, wherein pin protrudes from plastic package body, and heat dissipation component protrudes from plastic package body.

[0014] Further, the length of carrier stage is greater than or equal to the length of chip connecting layer, and the length of chip connecting layer is greater than or equal to the length of chip.

[0015] Further, the length of carrier stage is greater than or equal to the length of radiator connecting layer, and the length of radiator connecting layer is greater than or equal to the length of radiator base plate.

[0016] Further, the heat dissipation component is cuboid, the heat dissipation component is flat sheet structure, the plane of each heat dissipation component is parallel, and the extension direction is perpendicular to the base plate, and the heat dissipation component is evenly distributed on the base plate.

[0017] Further, the heat dissipation components are cuboids, the heat dissipation components are long strip-shaped prism structures, the extension directions of the heat dissipation components are parallel to each other, and the extension directions are perpendicular to the heat sink substrate, and the heat dissipation components are uniformly distributed on the substrate.

[0018] Further, the heat dissipation components are cylinders, the heat dissipation components are long strip-shaped cylindrical structures, the extension directions of the heat dissipation components are parallel to each other, and the extension directions are perpendicular to the heat sink substrate, and the heat dissipation components are uniformly distributed on the substrate.

[0019] The utility model discloses a discrete semiconductor device package structure of integrated radiator, its characterized in that, it includes,

[0020] Metal frame, it includes pin and slide glass stage that connect each other;

[0021] Chip connecting layer is set up in the upper end of slide glass stage, and fixes chip on the upper end of slide glass stage;

[0022] Chip is located in the upper end of chip connecting layer, and is connected with chip connecting layer;

[0023] Metal bonding assembly, one end is connected with chip, and the other end is connected with pin;

[0024] Radiator connecting layer is set up in the lower end of slide glass stage, and fixes radiator on the lower end of slide glass stage;

[0025] Radiator includes substrate and a plurality of heat dissipation components, the substrate is located in the inside of plastic package body, the substrate is connected to the lower end of radiator connecting layer, the heat dissipation component is an entirety with the substrate, and the interval is arranged between two adjacent heat dissipation components;

[0026] Plastic package body is wrapped in the outside of metal frame, chip connecting layer, chip, metal bonding assembly, radiator connecting layer and radiator substrate, wherein, pin is stretched out from one side of plastic package body, heat dissipation component is stretched out from the bottom surface of plastic package body, and the end away from chip of slide glass stage is stretched out from the other side of plastic package body.

[0027] Further, the heat dissipation components are cuboids, the heat dissipation components are long strip-shaped prism structures, the extension directions of the heat dissipation components are parallel to each other, and the extension directions are perpendicular to the heat sink substrate, and the heat dissipation components are uniformly distributed on the substrate.

[0028] Further, the heat dissipation components are cuboids, the heat dissipation components are long strip-shaped prism structures, the extension directions of the heat dissipation components are parallel to each other, and the extension directions are perpendicular to the heat sink substrate, and the heat dissipation components are uniformly distributed on the substrate.

[0029] Further, the heat dissipation components are cylinders, the heat dissipation components are long strip-shaped cylinder structures, the extension directions of the heat dissipation components are parallel to each other, and the extension directions are perpendicular to the heat sink substrate, and the heat dissipation components are uniformly distributed on the substrate.

[0030] Compared with the prior art, the utility model discloses a kind of discrete semiconductor device packaging structures of integrated radiator.The radiator includes substrate and multiple heat dissipation components, wherein substrate is located inside plastic package body and is connected to the lower end of radiator connecting layer, and heat dissipation component is an entirety with substrate.Spacing is provided between adjacent two heat dissipation components, and heat dissipation component protrudes from plastic package body.Therefore, the heat dissipation component of integrated radiator is formed an entirety with discrete semiconductor device packaging, and heat dissipation component protrudes from the main packaging structure of discrete semiconductor device.Through this discrete semiconductor packaging structure of integrated radiator, chip heat can be more effectively conducted to external environment, not only eliminating the need for external radiator in system application, thereby simplifying assembly process flow and reducing cost;And improve the long-term reliability of system application.Effectively solve the problems of low heat dissipation efficiency, complex assembly, high cost and poor long-term reliability of existing semiconductor packaging devices. BRIEF DESCRIPTION OF DRAWINGS

[0031] In order to more clearly illustrate the technical scheme in the embodiments of the utility model or the prior art, the following briefly introduces the drawings needed to be used in the embodiments, and the drawings in the following description are only corresponding drawings of some embodiments of the utility model.

[0032] Figure 1 It is the front view of the discrete semiconductor device packaging structure embodiment of existing.

[0033] Figure 2 It is the front view of the discrete semiconductor device packaging structure first embodiment of integrated radiator of the utility model.

[0034] Figure 3 It is the bottom view of the discrete semiconductor device packaging structure first embodiment of integrated radiator of the utility model.

[0035] Figure 4 It is the front view of the discrete semiconductor device packaging structure second embodiment of integrated radiator of the utility model.

[0036] Figure 5The utility model discloses a discrete semiconductor device packaging structure of integrated radiator second embodiment's plan view of the utility model.

[0037] Figure 6 The utility model discloses a discrete semiconductor device packaging structure of integrated radiator third embodiment's front view.

[0038] Figure 7 The utility model discloses a discrete semiconductor device packaging structure of integrated radiator third embodiment's plan view.

[0039] Figure 8 The utility model discloses a discrete semiconductor device packaging structure of integrated radiator fourth embodiment's front view.

[0040] Figure 9 The utility model discloses a discrete semiconductor device packaging structure of integrated radiator fourth embodiment's plan view.

[0041] Figure 10 The utility model discloses a discrete semiconductor device packaging structure of integrated radiator fifth embodiment's front view.

[0042] Figure 11 The utility model discloses a discrete semiconductor device packaging structure of integrated radiator fifth embodiment's plan view.

[0043] Figure 12 The utility model discloses a discrete semiconductor device packaging structure of integrated radiator sixth embodiment's front view.

[0044] Figure 13 The utility model discloses a discrete semiconductor device packaging structure of integrated radiator sixth embodiment's plan view.

[0045] In the figure, 10, the package structure of the existing discrete semiconductor device; 11, the metal frame carrier table; 12, the chip; 13, the plastic package; 14, the heat dissipation base plate; 20, the package structure of the discrete semiconductor device integrated with the heat sink; 21, the metal frame; 211, the pin; 212, the carrier table; 22, the chip connecting layer; 23, the chip; 24, the metal bonding assembly; 25, the heat sink connecting layer; 26, the heat sink; 261, the base plate; 262, the heat dissipation component; 27, the plastic package; 30, the package structure of the discrete semiconductor device integrated with the heat sink; 31, the heat dissipation component; 32, the base plate; 33, the chip; 40, the package structure of the discrete semiconductor device integrated with the heat sink; 41, the heat dissipation component; 42, the base plate; 43, the chip; 50, the package structure of the discrete semiconductor device integrated with the heat sink; 51, the metal frame; 511, the pin; 512, the carrier table; 52, the chip connecting layer; 53, the chip; 54, the metal bonding assembly; 55, the heat sink connecting layer; 56, the heat sink; 561, the base plate; 562, the heat dissipation component; 57, the plastic package; 60, the package structure of the discrete semiconductor device integrated with the heat sink; 61, the heat dissipation component; 62, the base plate; 63, the chip; 70, the package structure of the discrete semiconductor device integrated with the heat sink; 71, the heat dissipation component; 72, the base plate; 73, the chip. DETAILED DESCRIPTION

[0046] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work fall within the scope of the present application.

[0047] The directional terms mentioned in the present application, such as "up", "down", "front", "back", "left", "right", "inner", "outer", "side", "top" and "bottom", are only the orientation of the drawings, and the directional terms are used to illustrate and understand the present application, but not to limit the present application.

[0048] The terms "first", "second" and the like in the present application are only for the purpose of description, and cannot be understood as indicating or implying relative importance, and are not limited as the order.

[0049] In the drawings, similar structures are denoted by the same reference numerals.

[0050] Please refer to Figure 2 and Figure 3The utility model provides a kind of discrete semiconductor device plug-in type packaging structure of integrated radiator.The integrated radiator's discrete semiconductor device packaging structure 20 includes metal frame 21, chip connecting layer 22, chip 23, metal bonding assembly 24, radiator connecting layer 25, radiator 26 and plastic package body 27.Metal frame 21 includes pin 211 and carrier stage 212 connected with each other, chip connecting layer 22 is arranged on the upper end of carrier stage 212, chip 23 is fixed on the upper end of carrier stage 212, chip 23 is located on the upper end of chip connecting layer 22, and chip 23 is power semiconductor device or power management chip.Power semiconductor device can be metal oxide semiconductor field effect transistor, insulated gate bipolar transistor, gallium nitride device or silicon carbide device, and the chip 23 can also be integrated circuit chip.One end of metal bonding assembly 24 is connected with chip 23, and the other end of metal bonding assembly 24 is connected with pin 211.Radiator connecting layer 25 is arranged on the lower end of carrier stage 212, and the radiator is fixed on the lower end of carrier stage.

[0051] Please refer to Figure 2 And Figure 3 Radiator 26 includes substrate 261 and multiple heat dissipation components 262.Substrate 261 is located inside plastic package body 27, and heat dissipation components 262 protrude from plastic package body 27.Substrate 261 is connected to the lower end of radiator connecting layer 25, heat dissipation components 262 are an integral whole with substrate 261, and a gap is provided between adjacent two heat dissipation components 262.Plastic package body 27 is wrapped outside metal frame 21, chip connecting layer 22, chip 23, metal bonding assembly 24, radiator connecting layer 25 and radiator substrate 261, pin 211 protrudes from plastic package body 27, and heat dissipation components 262 protrude from plastic package body 27.

[0052] Please refer to Figure 2 And Figure 3 The length of carrier stage 212 is greater than or equal to the length of chip connecting layer 22.Therefore, carrier stage 212 and chip connecting layer 22 have a larger contact area, so that carrier stage 212 and chip connecting layer 22 are more stable in connection.Moreover, the length of chip connecting layer 22 is greater than or equal to the length of chip 23.Therefore, chip 23 and chip connecting layer 22 have a larger contact area, so that chip 23 and chip connecting layer 22 are more stable in connection.

[0053] Please refer to Figure 2 And Figure 3The length of the slide glass stage 212 is greater than or equal to the length of the heat sink connecting layer 25. Therefore, the slide glass stage 212 and the heat sink connecting layer 25 have a large contact area, so that the slide glass stage 212 and the heat sink connecting layer 25 are connected more firmly. Moreover, the length of the heat sink connecting layer 25 is greater than or equal to the length of the substrate 261. Therefore, the substrate 261 and the heat sink connecting layer 25 have a large contact area, so that the substrate 261 and the heat sink connecting layer 25 are connected more firmly.

[0054] Referring to Figure 2 and Figure 3 In the integrated heat sink discrete semiconductor device package structure 20 of the present embodiment, the heat sink members 262 are cuboids. The heat sink members 262 are in a flat sheet structure, and the planes of the heat sink members 262 are parallel to each other and perpendicular to the substrate 261. Moreover, the heat sink members 262 are uniformly distributed on the substrate 261. The discrete semiconductor device package structure 20 can be provided with a plurality of heat sink members 262, which can effectively dissipate heat from the chip 23.

[0055] Referring to Figure 4 and Figure 5 In the integrated heat sink discrete semiconductor device package structure 30 of the present embodiment, the heat sink members 31 are cuboids. The heat sink members 31 are in a long strip prismatic structure, and the heat sink members 31 are parallel to each other and perpendicular to the substrate 32. Moreover, the heat sink members 31 are uniformly distributed on the substrate 32. The discrete semiconductor device package structure 30 can be provided with a plurality of heat sink members 31, which can effectively dissipate heat from the chip 33.

[0056] Referring to Figure 6 and Figure 7 In the integrated heat sink discrete semiconductor device package structure 40 of the present embodiment, the heat sink members 41 are cylinders. The heat sink members 41 are in a long strip cylindrical structure, and the heat sink members 41 are parallel to each other and perpendicular to the substrate 42. Moreover, the heat sink members 41 are uniformly distributed on the substrate 42. Therefore, the discrete semiconductor device package structure 40 can be provided with a plurality of heat sink members 41, which can effectively dissipate heat from the chip 43.

[0057] Referring to Figure 8 and Figure 9The utility model provides a kind of discrete semiconductor device surface mount type packaging structure of integrated radiator.The discrete semiconductor device packaging structure 50 of integrated radiator includes metal frame 51, chip connecting layer 52, chip 53, metal bonding assembly 54, radiator connecting layer 55, radiator 56 and plastic package body 57.Metal frame 51 includes pin 511 and carrier stage 512 connected with each other, chip connecting layer 52 is arranged on the upper end of carrier stage 512, and chip connecting layer 52 is fixed on the upper end of carrier stage 512.Chip 53 is located on the upper end of chip connecting layer 52, and chip 53 is connected with chip connecting layer 52.One end of metal bonding assembly 54 is connected with chip 53, and the other end of metal bonding assembly 54 is connected with pin 511.Radiator connecting layer 55 is arranged on the lower end of carrier stage 512, and radiator connecting layer 55 is fixed on the lower end of carrier stage 512.

[0058] Please refer to Figure 8 And Figure 9 Radiator 56 includes substrate 561 and multiple heat dissipation components 562.Substrate 561 is located inside plastic package body 57, and substrate 561 is connected to the lower end of radiator connecting layer 55.Heat dissipation components 562 are an entirety with substrate 561, and interval is arranged between adjacent two heat dissipation components 562.Plastic package body 57 is wrapped on the outer side of metal frame 51, chip connecting layer 52, chip 53, metal bonding assembly 54, radiator connecting layer 55 and the substrate 561 of radiator 56.Moreover, pin 511 extends from one side of plastic package body 57, and the end of carrier stage 512 away from chip 53 extends from the other side of plastic package body 57.As shown in Figure 8 The bottom surface of substrate 561 away from radiator connecting layer 55 is the bottom surface of substrate 561.The bottom surface of plastic package body 57 is flush with the bottom surface of substrate 561, and heat dissipation components 562 extend from the bottom surface of plastic package body 57.

[0059] Subsequently, processing equipment can transfer or further process the discrete semiconductor device packaging structure 50 of integrated radiator.

[0060] Please refer to Figure 8 And Figure 9 In the discrete semiconductor device packaging structure 50 of integrated radiator of the embodiment, heat dissipation components 562 are cuboids.Heat dissipation components 562 are in flat sheet structure, the plane of each heat dissipation component 562 is parallel to each other, and the extension direction is perpendicular to each other with radiator substrate 561.Moreover, heat dissipation components 562 are uniformly distributed on substrate 561.The discrete semiconductor device surface mount type packaging structure 50 can be provided with multiple heat dissipation components 562, which can effectively dissipate heat for chip 53.

[0061] Please refer to Figure 10 And Figure 11In the discrete semiconductor device package structure 60 of the integrated heat sink of the embodiment, the heat dissipation components 61 are cuboids. The heat dissipation components 61 are long strip-shaped prismatic structures, the extending directions of the heat dissipation components 61 are parallel to each other, and the extending directions are perpendicular to the heat sink substrate 62. Moreover, the heat dissipation components 61 are uniformly distributed on the substrate 62. The discrete semiconductor device package surface-mounting structure 60 can be provided with a plurality of heat dissipation components 61, and the heat dissipation components 61 can effectively dissipate heat of the chip 63.

[0062] Please refer to Figure 12 and Figure 13 In the discrete semiconductor device package structure 70 of the integrated heat sink of the embodiment, the heat dissipation components 71 are cylinders. The heat dissipation components 71 are long strip-shaped cylindrical structures, the extending directions of the heat dissipation components 71 are parallel to each other, and the extending directions are perpendicular to the heat sink substrate 72. Moreover, the heat dissipation components 71 are uniformly distributed on the substrate 72. The discrete semiconductor device package surface-mounting structure 70 can be provided with a plurality of heat dissipation components 71, and the heat dissipation components 71 can effectively dissipate heat of the chip 73.

[0063] The manufacturing process of the utility model is:

[0064] Please refer to Figure 2 , Figure 2 The first embodiment of the utility model is:

[0065] First, a metal frame 21 is provided, the metal frame 21 includes pin 211 and slide glass table 212 connected with each other, then, chip connection layer 22 is arranged on slide glass table 212, chip 23 is fixed on the upper end of slide glass table 212 through chip connection layer 22, then, one end of metal bonding assembly 24 is connected with chip 23, and the other end of metal bonding assembly 24 is connected with pin 211, subsequently, heat sink connection layer 25 is arranged on the lower end of slide glass table 212, and heat sink connection layer 25 is connected with slide glass table 212, then, heat sink 26 is fixed on the lower end of slide glass table 212 through heat sink connection layer 25, and the base plate 261 of heat sink 26 is connected with heat sink connection layer 25, finally, plastic package 27 is wrapped on the outer side of metal frame 21, chip connection layer 22, chip 23, metal bonding assembly 24, heat sink connection layer 25 and base plate 261. Pin 211 protrudes from plastic package 27, and heat dissipation component 262 protrudes from plastic package 27. The manufacturing of the discrete semiconductor device package structure 20 is completed.

[0066] Please refer to Figure 8 , Figure 8 The second embodiment of the utility model is:

[0067] First, a metal frame 51 is provided, which includes pins 511 and a carrier platform 512 connected to each other; then, a chip connecting layer 52 is arranged on the carrier platform 512; the chip 23 is fixed on the upper end of the carrier platform 512 through the chip connecting layer 52; then, one end of the metal bonding assembly 54 is connected with the chip 53, and the other end of the metal bonding assembly 54 is connected with the pin 511; subsequently, a heat sink connecting layer 55 is arranged on the lower end of the carrier platform 512, and the heat sink connecting layer 55 is connected with the carrier platform 512. Then, the heat sink 56 is fixed on the lower end of the carrier platform 512 through the heat sink connecting layer 55, and the base plate 261 of the heat sink 56 is connected with the heat sink connecting layer 25. Finally, the plastic package 57 is wrapped outside the metal frame 51, the chip connecting layer 52, the chip 53, the metal bonding assembly 24, the heat sink connecting layer 55 and the base plate 561. The pin 511 protrudes from the plastic package 57, and the heat dissipation component 562 protrudes from the plastic package 57. The manufacturing of the discrete semiconductor device packaging structure 50 is completed.

[0068] The utility model provides a discrete semiconductor device packaging structure of integrated heat sink. The heat sink includes a base plate and a plurality of heat dissipation components, wherein the base plate is located inside the plastic package. And is connected to the lower end of the heat sink connecting layer, and the heat dissipation components and the base plate are an integral whole. Adjacent two heat dissipation components are provided with a spacing, and the heat dissipation components protrude from the plastic package. Therefore, the heat dissipation components of the integrated heat sink form an integral whole with the discrete semiconductor device packaging, and the heat dissipation components protrude from the main packaging structure of the discrete semiconductor device. Through the discrete semiconductor packaging structure of the integrated heat sink, the heat of the chip can be more effectively conducted to the external environment, not only eliminating the need for an external heat sink in system application, thereby simplifying the assembly process flow and reducing the cost, but also improving the long-term reliability of system application. Effectively solve the problems of low heat dissipation efficiency, complex assembly, high cost and poor long-term reliability of existing semiconductor packaging devices.

[0069] In conclusion, although the utility model has disclosed the above-mentioned preferred embodiments, the above-mentioned preferred embodiments are not used to limit the utility model, and ordinary skilled persons in the art can make various changes and decorations without departing from the spirit and scope of the utility model. Therefore, the protection scope of the utility model is subject to the scope defined by the claims.

Claims

1. An integrated heat spreader discrete semiconductor device package structure, comprising: It includes, Metal frame, including the pin and the carrier platform which are connected with each other; Chip connecting layer, arranged on the upper end of the carrier platform, fixing the chip on the upper end of the carrier platform; Chip, located on the upper end of the chip connecting layer, connected with the chip connecting layer; Metal bonding assembly, one end connected with the chip, the other end connected with the pin; Radiator connecting layer, arranged on the lower end of the carrier platform, fixing the radiator on the lower end of the carrier platform; Radiator, including the substrate and a plurality of radiator components, the substrate located inside the plastic package, the substrate connected to the lower end of the radiator connecting layer, the radiator components and the substrate are an integral whole, and a space is arranged between two adjacent radiator components; The plastic package, wrapped on the outer side of the metal frame, the chip connecting layer, the chip, the metal bonding assembly, the radiator connecting layer and the radiator substrate, wherein the pin protrudes from the plastic package, and the radiator components protrude from the plastic package.

2. The integrated heat spreader-discrete semiconductor device package structure of claim 1, wherein, The length of the carrier platform is greater than or equal to the length of the chip connecting layer, and the length of the chip connecting layer is greater than or equal to the length of the chip.

3. The integrated heat spreader-discrete semiconductor device package structure of claim 1, wherein, The length of the carrier platform is greater than or equal to the length of the radiator connecting layer, and the length of the radiator connecting layer is greater than or equal to the length of the radiator substrate.

4. The integrated heat spreader-discrete semiconductor device package structure of claim 1, wherein, The radiator components are cuboids, the radiator components are in a flat sheet structure, the planes of each of the radiator components are parallel to each other, and the extension directions of the radiator components are perpendicular to the substrate.

5. The integrated heat spreader-discrete semiconductor device package structure of claim 1, wherein, The radiator components are cuboids, the radiator components are in a flat sheet structure, the planes of each of the radiator components are parallel to each other, and the extension directions of the radiator components are perpendicular to the substrate.

6. The integrated heat spreader-discrete semiconductor device package structure of claim 1, wherein, The radiator components are cylinders, the radiator components are in a flat sheet structure, the planes of each of the radiator components are parallel to each other, and the extension directions of the radiator components are perpendicular to the substrate.

7. An integrated heat spreader discrete semiconductor device package structure, comprising: It includes, Metal frame, including the pin and the carrier platform which are connected with each other; Chip connecting layer, arranged on the upper end of the carrier platform, fixing the chip on the upper end of the carrier platform; Chip, located on the upper end of the chip connecting layer, connected with the chip connecting layer; Metal bonding assembly, one end connected with the chip, the other end connected with the pin; Radiator connecting layer, arranged on the lower end of the carrier platform, fixing the radiator on the lower end of the carrier platform; Radiator, including the substrate and a plurality of radiator components, the substrate located inside the plastic package, the substrate connected to the lower end of the radiator connecting layer, the radiator components and the substrate are an integral whole, and a space is arranged between two adjacent radiator components; The plastic package, wrapped on the outer side of the metal frame, the chip connecting layer, the chip, the metal bonding assembly, the radiator connecting layer and the radiator substrate, wherein the pin protrudes from the plastic package, and the radiator components protrude from the plastic package.

8. The integrated heat spreader-discrete semiconductor device package structure of claim 7, wherein, The heat dissipation components are cuboids, the heat dissipation components are in flat sheet structure, the planes of the heat dissipation components are parallel to each other, the extending directions of the heat dissipation components are perpendicular to the heat sink substrate, and the heat dissipation components are uniformly distributed on the substrate.

9. The integrated heat spreader-discrete semiconductor device package structure of claim 7, wherein, The heat dissipation components are cuboids, the heat dissipation components are in long strip prismatic structure, the extending directions of the heat dissipation components are parallel to each other, the extending directions of the heat dissipation components are perpendicular to the heat sink substrate, and the heat dissipation components are uniformly distributed on the substrate.

10. The integrated heat spreader-discrete semiconductor device package structure of claim 7, wherein, The heat dissipation components are cylinders, the heat dissipation components are in long strip cylindrical structure, the extending directions of the heat dissipation components are parallel to each other, the extending directions of the heat dissipation components are perpendicular to the heat sink substrate, and the heat dissipation components are uniformly distributed on the substrate.

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