Wafer UV adhesive tape

Abstract

The utility model relates to the technical field of adhesive tapes, in particular to a wafer UV adhesive tape. In order to solve the problems that cleaning of glue stains left on the surface of a wafer is tedious, extra working hours are consumed, impurities are easy to introduce, and negative effects are generated on the electrical performance of a chip, the following technical scheme is provided: the chip comprises a base layer which is used as a core supporting layer; the buffer layer is tightly attached to one side of the base layer and used for buffering mechanical vibration transmitted to the adhesive tape in the machining process; the heat insulation layer is attached to the side, away from the base layer, of the buffer layer and used for preventing machining heat from being conducted to the back face of the wafer; the enhancement layer is arranged on one side, far away from the buffer layer, of the heat insulation layer and is used for improving the mechanical property of the adhesive tape and coping with stretching and bending stress under complex processing working conditions; the adhesive layer is positioned on one side, far away from the heat insulation layer, of the reinforcing layer. According to the utility model, the residual of the processed adhesive tape can be effectively prevented, the subsequent process is not interfered, and meanwhile, the good electrical property of the chip is ensured.

Description

TECHNICAL FIELD

[0001] The utility model relates to the technical field of adhesive tape, especially to a wafer UV adhesive tape. BACKGROUND

[0002] In the semiconductor chip manufacturing process, as a basic element, the wafer needs to go through complex and precise processing procedures such as photoetching, etching, and grinding. During this period, in order to ensure the stable fixation of the wafer and prevent it from being displaced or scratched, the adhesive tape plays a key auxiliary role. However, the traditional adhesive tape used for wafer bearing has the problem of residual printing during use. When the adhesive tape is removed after processing, the cleaning of the residual printing on the wafer surface is complicated, which not only consumes additional working hours but also easily introduces impurities, thereby negatively affecting the electrical performance of the chip. In view of this, the utility model provides a wafer UV adhesive tape. SUMMARY

[0003] The utility model aims at the problem that the residual printing on the wafer surface is complicated to clean, which not only consumes additional working hours but also easily introduces impurities, thereby negatively affecting the electrical performance of the chip, and provides a wafer UV adhesive tape.

[0004] The technical scheme of the utility model: a wafer UV adhesive tape, comprising a base layer as a core support layer; a buffer layer closely attached to one side of the base layer for buffering mechanical vibration transmitted to the adhesive tape during processing; a heat insulation layer attached to the side of the buffer layer away from the base layer for blocking the conduction of processing heat to the back of the wafer; an enhancement layer provided on the side of the heat insulation layer away from the buffer layer for improving the mechanical properties of the adhesive tape to cope with stretching and bending stress under complex processing conditions; an adhesive layer located on the side of the enhancement layer away from the heat insulation layer for ensuring stable attachment during processing and no residual adhesive after solidification; a UV blocking layer laid on the side of the adhesive layer away from the enhancement layer for avoiding the adverse effects of ultraviolet rays on the special process and electrical performance of the wafer; a UV tack-reducing adhesive layer located on the side of the UV blocking layer away from the adhesive layer for easily removing the adhesive tape from the wafer after processing and reducing the risk of residual adhesive; an antistatic layer laid on the side of the UV tack-reducing adhesive layer away from the UV blocking layer for preventing static accumulation from damaging the precise circuit structure of the wafer; and a release layer attached to the side of the antistatic layer away from the UV tack-reducing adhesive layer for avoiding the premature adhesion of the adhesive layer to foreign objects.

[0005] Optionally, the base layer is made of polyimide film with a thickness of 30-50 μm.

[0006] Optionally, the buffer layer is made of polyurethane rubber with a thickness of 10-20 μm.

[0007] Optionally, the heat insulation layer is composed of ceramic fiber and silicone rubber with a thickness of 8-15 μm.

[0008] Optionally, the reinforcing layer is made of high-strength glass fiber fabric impregnated with epoxy resin, with a thickness of 5-10 μm.

[0009] Optionally, the adhesive layer is made of acrylate UV curing adhesive, with a thickness of 10-30 μm.

[0010] Optionally, the UV blocking layer is made of polycarbonate film doped with nano zinc oxide, with a thickness of 5-10 μm.

[0011] Optionally, the UV tack-reducing adhesive layer is made of photodegradable acrylate adhesive, with a thickness of 3-6 μm.

[0012] Optionally, the antistatic layer is a graphene-doped polyethylene terephthalate film, with a thickness of 3-8 μm.

[0013] Optionally, the release layer is made of fluorine release film, with a thickness of 15-30 μm.

[0014] In summary, the present application includes at least one of the following beneficial technical effects:

[0015] The present application has the characteristics of high temperature resistance, mechanical vibration buffering, heat insulation, antistatic, high-strength adhesion, no residual glue, easy demolding, and is suitable for complex working conditions of semiconductor wafer processing.

[0016] Further, when the UV tack-reducing adhesive layer is irradiated with specific high-intensity UV light for a certain period of time, the adhesive undergoes photodegradation reaction, and the adhesion is greatly reduced, which facilitates easy removal of the adhesive tape from the wafer after processing, and reduces the risk of residual glue.

[0017] In summary, the present application can effectively prevent the adhesive tape from being left after processing, without interfering with subsequent processes, while ensuring good electrical performance of the chip. BRIEF DESCRIPTION OF DRAWINGS

[0018] Figure 1 A structure diagram of a wafer UV adhesive tape is given.

[0019] Figure 2 A disassembly structure diagram of a wafer UV adhesive tape is given.

[0020] REFERENCE NUMERALS:

[0021] 1, base layer; 2, buffer layer; 3, heat insulation layer; 4, reinforcing layer; 5, adhesive layer; 6, UV blocking layer; 7, UV tack-reducing adhesive layer; 8, antistatic layer; 9, release layer. DETAILED DESCRIPTION

[0022] The technical solutions of the present application will be described clearly and completely in connection with the drawings. Obviously, the described embodiments are some of the embodiments of the present application, but not all the embodiments.

[0023] The components of the embodiments of the present application generally described and shown in the accompanying drawings can be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of the present application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely represents selected embodiments of the application.

[0024] Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor are within the scope of protection of the present application.

[0025] In the description of the present application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as limiting the present application. In addition, the terms "first", "second", "third" are only for descriptive purposes and cannot be understood as indicating or implying relative importance.

[0026] In the description of the present application, it should be noted that unless otherwise explicitly specified and limited, the terms "mounting", "connection", "connection" should be broadly understood, for example, it can be fixedly connected, or it can be detachably connected, or integrally connected; it can be mechanically connected, or it can be electrically connected; it can be directly connected, or it can be indirectly connected through an intermediate medium; it can be the communication inside two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0027] Embodiments

[0028] As Figure 1 and Figure 2 shown, the wafer UV tape provided by the present application comprises a base layer 1, the material of the base layer 1 is polyimide film, and the thickness is 30-50 μm. The base layer 1 serves as a core support layer, the polyimide film has excellent high-temperature resistance, can withstand the high-temperature environment in semiconductor processing, has excellent mechanical strength, can effectively resist external force impact and stretching, ensures the overall structural stability of the tape, and maintains the dimensional accuracy.

[0029] The buffer layer 2 closely attached to one side of the base layer 1 is made of polyurethane rubber with a thickness of 10-20 μm. The polyurethane rubber has good elasticity, can buffer the mechanical vibration transmitted to the tape during processing, reduce the stress on the wafer, prevent wafer damage caused by slight vibration, and enhance the flexibility of the tape.

[0030] The thermal insulation layer 3 attached to the side of the buffer layer 2 away from the base layer 1 is composed of ceramic fiber and silicone rubber with a thickness of 8-15 μm. The ceramic fiber gives the thermal insulation layer 3 excellent thermal insulation performance, blocking the conduction of processing heat to the back of the wafer, and the silicone rubber ensures the integrity and flexibility of the overall structure, avoiding the influence of high temperature on the adhesion performance of the tape.

[0031] The reinforcing layer 4 is set on the side of the thermal insulation layer 3 away from the buffer layer 2, which is made of high-strength glass fiber fabric impregnated with epoxy resin with a thickness of 5-10 μm. The glass fiber fabric strengthens the tensile and tear resistance of the tape, and the epoxy resin tightly bonds the fibers, synergistically improving the mechanical properties of the tape to cope with stretching and bending stress under complex processing conditions.

[0032] The adhesive layer 5 is located on the side of the reinforcing layer 4 away from the thermal insulation layer 3, which is composed of acrylate UV curing adhesive with a thickness of 10-30 μm. It has moderate adhesion in the initial state to facilitate the attachment of the wafer, and after irradiation with specific wavelength and intensity ultraviolet light, it rapidly crosslinks and cures, greatly enhancing the adhesion, ensuring stable attachment during processing, and leaving no residual adhesive after curing.

[0033] The UV blocking layer 6 is laid on the side of the adhesive layer 5 away from the reinforcing layer 4, which is made of polycarbonate film doped with nano zinc oxide with a thickness of 5-10 μm. Nano zinc oxide can efficiently absorb and scatter ultraviolet light, and polycarbonate film as the matrix has good flexibility and mechanical strength. The combination of the two can effectively block external excess ultraviolet light from penetrating the wafer, avoiding the adverse effects of ultraviolet light on the wafer's special process and electrical properties.

[0034] The UV tack-reducing adhesive layer 7 is located on the side of the UV blocking layer 6 away from the adhesive layer 5, which is composed of photodegradable acrylate adhesive with a thickness of 3-6 μm. This layer maintains a certain tackiness under normal conditions to ensure the integrity of the tape as a whole, and when exposed to specific high-intensity UV light, such as wavelength 254 nm and light intensity 150-200 mW / cm 2 , after a certain period of irradiation, the adhesive undergoes a photodegradation reaction, greatly reducing the tackiness, making it easy to remove the tape from the wafer after processing, and reducing the risk of residual adhesive.

[0035] An antistatic layer 8 is laid on the side of the UV adhesion-reducing glue layer 7 away from the UV blocking layer 6. The antistatic layer 8 is a graphene-doped polyethylene terephthalate film with a thickness of 3-8 μm. The graphene gives the layer excellent electrical conductivity, which can promptly conduct away static electricity generated during processing, preventing static electricity accumulation from damaging the wafer's precision circuit structure. The polyethylene terephthalate ensures the film's flexibility and mechanical properties.

[0036] A release layer 9 is attached to the side of the antistatic layer 8 away from the UV adhesion-reducing glue layer 7. The release layer 9 is made of a fluorine release film with a thickness of 15-30 μm. The fluorine release film has low surface energy and excellent release properties, preventing the adhesive layer 5 from prematurely sticking to foreign objects and ensuring the convenience of tape storage and transportation without performance loss before use.

[0037] In this embodiment, the base layer 1 has exceptional high-temperature resistance, can withstand the high-temperature environment in semiconductor processing, has excellent mechanical strength, can effectively resist external force impact and stretching, ensures the stability of the overall structure of the tape and maintains dimensional accuracy. The buffer layer 2 can buffer mechanical vibrations transmitted to the tape during processing, reduce the stress on the wafer, prevent wafer damage caused by minor vibrations, and enhance the flexibility of the tape. The ceramic fiber gives the thermal insulation layer 3 excellent thermal insulation performance, blocking the conduction of processing heat to the back of the wafer, and the silicone rubber ensures the integrity and flexibility of the overall structure, preventing high temperatures from affecting the adhesive properties of the tape. The glass fiber fabric strengthens the tape's tensile and tear resistance, and the epoxy resin tightly bonds the fibers, synergistically improving the mechanical properties of the tape to cope with stretching and bending stress under complex processing conditions. The adhesive layer 5 has moderate adhesion in the initial state to facilitate wafer attachment, and after irradiation with specific wavelength and intensity ultraviolet light, it rapidly crosslinks and cures, significantly enhancing adhesion, ensuring stable attachment during processing, and leaving no residue after curing. The UV blocking layer 6 efficiently absorbs and scatters ultraviolet light, and the polycarbonate film as the base has good flexibility and mechanical strength, which can effectively block external excess ultraviolet light from penetrating the wafer, preventing adverse effects of ultraviolet light on the wafer's special process and electrical properties. The UV adhesion-reducing glue layer 7 maintains a certain adhesion under normal conditions to ensure the overall integrity of the tape, and when exposed to specific high-intensity UV light, such as wavelength 254 nm and light intensity 150-200 mW / cm 2 , after a certain period of irradiation, the adhesive undergoes photodegradation, significantly reducing adhesion, making it easy to remove the tape from the wafer after processing, reducing the risk of residue. The antistatic layer 8 has excellent electrical conductivity, which can promptly conduct away static electricity generated during processing, preventing static electricity accumulation from damaging the wafer's precision circuit structure, and the polyethylene terephthalate ensures the film's flexibility and mechanical properties. The release layer 9 has low surface energy and excellent release properties, preventing the adhesive layer 5 from prematurely sticking to foreign objects, ensuring the convenience of tape storage and transportation, and maintaining performance before use.

[0038] The above specific embodiments are only optional embodiments of the present application, and based on the technical scheme of the present application and the related enlightenment of the above embodiments, the person skilled in the art can make various alternative improvements and combinations on the above specific embodiments.

Claims

1. A wafer UV tape, characterized by, Comprise: The base layer (1) as the core support layer; The buffer layer (2) closely attached to one side of the base layer (1) for buffering mechanical vibration transmitted to the tape during processing; The heat insulation layer (3) attached to the side of the buffer layer (2) away from the base layer (1) for blocking the conduction of processing heat to the back of the wafer; The reinforcing layer (4) provided on the side of the heat insulation layer (3) away from the buffer layer (2) for improving the mechanical properties of the tape to cope with stretching and bending stress under complex processing conditions; The adhesive layer (5) located on the side of the reinforcing layer (4) away from the heat insulation layer (3) for ensuring stable adhesion during processing, and no residual glue after curing; The UV blocking layer (6) laid on the side of the adhesive layer (5) away from the reinforcing layer (4) for avoiding the adverse effects of ultraviolet light on the special process and electrical properties of the wafer; The UV tack-reducing adhesive layer (7) located on the side of the UV blocking layer (6) away from the adhesive layer (5) for easily removing the tape from the wafer after processing, reducing the risk of residual glue; The antistatic layer (8) laid on the side of the UV tack-reducing adhesive layer (7) away from the UV blocking layer (6) for preventing static accumulation from damaging the precise circuit structure of the wafer; The release layer (9) attached to the side of the antistatic layer (8) away from the UV tack-reducing adhesive layer (7) for avoiding premature adhesion of the adhesive layer (5) to foreign objects.

2. The wafer UV tape of claim 1, wherein, The base layer (1) is made of polyimide film with a thickness of 30-50 μm.

3. The wafer UV tape of claim 1, wherein, The buffer layer (2) is made of polyurethane rubber with a thickness of 10-20 μm.

4. The wafer UV tape of claim 1, wherein, The heat insulation layer (3) has a thickness of 8-15 μm.

5. The wafer UV tape of claim 1, wherein, The reinforcing layer (4) is made of high-strength glass fiber fabric impregnated with epoxy resin with a thickness of 5-10 μm.

6. The wafer UV tape of claim 1, wherein, The adhesive layer (5) is composed of acrylic ester UV curing adhesive with a thickness of 10-30 μm.

7. The wafer UV tape of claim 1, wherein, The UV blocking layer (6) is made of polycarbonate film doped with nano zinc oxide with a thickness of 5-10 μm.

8. The wafer UV tape of claim 1, wherein, The UV tack-reducing adhesive layer (7) is composed of photodegradable acrylic adhesive with a thickness of 3-6 μm.

9. The wafer UV tape of claim 1, wherein, The antistatic layer (8) has a thickness of 3-8 μm.

10. The wafer UV tape of claim 1, wherein, The release layer (9) is made of fluorine release film with a thickness of 15-30 μm.

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