Test circuit and test device of power semiconductor device
By designing a unified control test circuit for power semiconductor devices, the problems of cumbersome testing processes and large errors in existing technologies have been solved, achieving efficient and accurate test results.
Patent Information
- Application Number
- CN202423155179.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-18
- Publication Date
- 2025-12-12
- Estimated Expiration
- 2034-12-18
AI Technical Summary
In existing technologies, the testing process for different types of power semiconductor devices requires specialized equipment, which makes the process cumbersome, inefficient, and prone to human error, affecting the accuracy and reliability of the test results.
Design a test circuit for power semiconductor devices, including a current source module, a voltage source module, a short-circuit control module, and a detection module. These modules are controlled by a controller to realize parameter detection and testing of power semiconductor devices, avoiding equipment switching.
It improved testing efficiency, ensured the accuracy and reliability of test results, reduced human error, simplified the testing process, and lowered R&D costs.
Smart Images
Figure CN223664727U_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of power semiconductor testing technology, and in particular to a test circuit and test apparatus for power semiconductor devices. Background Technology
[0002] In the field of modern technology, power semiconductor devices have become an indispensable core component of many electronic devices, and are widely used in many key areas such as computers, communication equipment, automotive electronic systems, industrial automation devices, photovoltaic power generation, frequency conversion technology and energy storage solutions.
[0003] Testing power semiconductor devices involves multiple stages and types, and specialized equipment is required for different types of power semiconductor devices. Especially in the aging test stage, it is often necessary to change equipment and reinstall and calibrate it multiple times, which makes the process cumbersome, inefficient, and prone to introducing human error, thus affecting the accuracy and reliability of the test results. Utility Model Content
[0004] In view of this, embodiments of this application provide a test circuit and test apparatus for power semiconductor devices, which can effectively solve the problem that in the prior art, the testing process for different types of power semiconductor devices requires the configuration of specialized equipment. Especially in the aging test stage, it is usually necessary to replace equipment and reinstall and calibrate it multiple times, which leads to a cumbersome and inefficient process, and is also prone to introducing human error, thereby affecting the accuracy and reliability of the test results.
[0005] In a first aspect, embodiments of this application provide a test circuit for a power semiconductor device, comprising: a current source module, a first voltage source module, a second voltage source module, a first short-circuit control module, a second short-circuit control module, a third short-circuit control module, a detection module, and a controller, wherein the detection module is used to detect the parameters of the power semiconductor device;
[0006] Each of the aforementioned short-circuit control modules is respectively located at different combinations between the input terminal, control terminal, and output terminal of the power semiconductor device;
[0007] The controller is electrically connected to the current source module, the first voltage source module, the second voltage source module, the first short-circuit control module, the second short-circuit control module, and the third short-circuit control module;
[0008] The controller is used to provide voltage signals to the control terminal and input terminal of the power semiconductor device by controlling the first voltage source module and the second voltage source module respectively, to provide current signals to the input terminal of the power semiconductor device by controlling the current source module, and to test the power semiconductor device by controlling the on and off of each of the short-circuit control modules and according to the parameters of the detection module.
[0009] In some embodiments, testing the power semiconductor device includes: acquiring parameters of the power semiconductor device and / or conducting experiments on the power semiconductor device.
[0010] In some embodiments, if the number of power semiconductor devices is N, where N is a positive integer greater than 1, the test circuit for the power semiconductor devices further includes: N-1 first short-circuit control modules, N-1 second short-circuit control modules, and N-1 third short-circuit control modules. Each first short-circuit control module is located between the input terminal and the control terminal of each power semiconductor device, each second short-circuit control module is located between the control terminal and the output terminal of each power semiconductor device, and each third short-circuit control module is located between the input terminal and the output terminal of each power semiconductor device.
[0011] In some embodiments, each of the short-circuit control modules has the same structure and includes a switching transistor;
[0012] Each of the aforementioned switching transistors is disposed at different combinations between the input terminal, control terminal, and output terminal of the power semiconductor device, and the control terminal of each of the aforementioned switching transistors is electrically connected to the controller.
[0013] In some embodiments, the detection module includes: a first voltage detection unit and a second voltage detection unit;
[0014] The input terminal of the first voltage detection unit is connected to the control terminal and the output terminal of the power semiconductor device, respectively, and the output terminal of the first voltage detection unit is electrically connected to the controller.
[0015] The input terminal of the second voltage detection unit is connected to the input terminal and the output terminal of the power semiconductor device, respectively, and the output terminal of the second voltage detection unit is electrically connected to the controller.
[0016] In some embodiments, the detection module further includes a current detection unit, wherein the input terminal of the current detection unit is connected to the output terminal of the power semiconductor device, and the output terminal of the current detection unit is electrically connected to the controller.
[0017] In some embodiments, the current source module includes: a current source and a first switch control unit, wherein the input terminal of the first switch control unit is connected to the output terminal of the current source, the output terminal of the first switch control unit is connected to the input terminal of the power semiconductor device, and the control terminal of the first switch control unit is electrically connected to the controller.
[0018] In some embodiments, the first voltage source module includes: a first voltage source and a second switch control unit, wherein the input terminal of the second switch control unit is connected to the output terminal of the first voltage source, the output terminal of the second switch control unit is electrically connected to the control terminal of the power semiconductor device, and the control terminal of the second switch control unit is electrically connected to the controller.
[0019] In some embodiments, the second voltage source module includes a second voltage source, and the input terminal of the first switch control unit is connected to the output terminal of the second voltage source.
[0020] Secondly, embodiments of this application provide a testing apparatus for power semiconductor devices, the testing apparatus for power semiconductor devices including at least one testing circuit for power semiconductor devices as described in the first aspect above.
[0021] The embodiments of this application have the following beneficial effects:
[0022] The test circuit for the power semiconductor device disclosed in this application includes a current source module, a first voltage source module, a second voltage source module, a first short-circuit control module, a second short-circuit control module, a third short-circuit control module, a detection module, and a controller. The detection module is used to detect the parameters of the power semiconductor device. Each short-circuit control module is respectively located at different combinations between the input, control, and output terminals of the power semiconductor device. The controller controls the current source module, the first voltage source module, the second voltage source module, the first short-circuit control module, the second short-circuit control module, and the third short-circuit control module, and tests the power semiconductor device based on the parameters from the detection module. The test circuit for the power semiconductor device disclosed in this application can acquire various data and perform multiple aging tests without switching between multiple devices, improving testing efficiency while ensuring the accuracy and reliability of the test results. Attached Figure Description
[0023] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of this application and should not be regarded as a limitation of the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.
[0024] Figure 1A first structural schematic diagram of the test circuit of a power semiconductor device according to an embodiment of this application is shown;
[0025] Figure 2 A second structural schematic diagram of the test circuit for a power semiconductor device according to an embodiment of this application is shown;
[0026] Figure 3 A circuit diagram of a test circuit for a power semiconductor device according to an embodiment of this application is shown.
[0027] Explanation of key component symbols:
[0028] 10: Current source module; 20: First voltage source module; 30: Second voltage source module; 40: First short-circuit control module; 50: Second short-circuit control module; 60: Third short-circuit control module; 70: Detection module; 80: Controller; 90: Power semiconductor device; 101: Current source; 102: First switch control unit; 201: First voltage source; 202: Second switch control unit; 301: Second voltage source; 701: First voltage detection unit; 702: Second voltage detection unit; 703: Current detection unit. Detailed Implementation
[0029] The technical solutions in the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments.
[0030] The components of the embodiments of this application described and illustrated in the accompanying drawings can be arranged and designed in a variety of different configurations. Therefore, the following detailed description of the embodiments of this application provided in the drawings is not intended to limit the scope of the claimed application, but merely to illustrate selected embodiments of the application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without inventive effort are within the scope of protection of this application.
[0031] In the following text, the terms "comprising," "having," and their cognates, which may be used in various embodiments of this application, are intended only to indicate a particular feature, number, step, operation, element, component, or combination thereof, and should not be construed as primarily excluding the presence of one or more other features, numbers, steps, operations, elements, components, or combinations thereof, or adding the possibility of one or more combinations thereof. Furthermore, the terms "first," "second," "third," etc., are used only for distinguishing descriptions and should not be construed as indicating or implying relative importance.
[0032] Unless otherwise specified, all terms used herein (including technical and scientific terms) shall have the same meaning as commonly understood by one of ordinary skill in the art to which the various embodiments of this application pertain. Terms (such as those defined in commonly used dictionaries) shall be interpreted as having the same meaning as in their contextual meaning in the relevant technical field and shall not be construed as having an idealized or overly formal meaning, unless clearly defined in the various embodiments of this application.
[0033] The following detailed description of some embodiments of this application is provided in conjunction with the accompanying drawings. Unless otherwise specified, the following embodiments and features can be combined with each other.
[0034] Considering that existing technologies require specialized equipment for testing different types of power semiconductor devices, especially in the aging test stage, which often necessitates multiple equipment changes, reinstallation, and calibration, the process is cumbersome, inefficient, and prone to human error, thus affecting the accuracy and reliability of test results. This application provides a test circuit and device for power semiconductor devices. The test circuit of this application can acquire various data and perform multiple aging tests without switching between multiple devices, improving testing efficiency while ensuring the accuracy and reliability of test results.
[0035] The test circuit for this power semiconductor device will be described below with reference to some specific embodiments.
[0036] Figure 1 A schematic diagram of a test circuit for a power semiconductor device 90 according to an embodiment of this application is shown. It is understood that the power semiconductor device 90 in this embodiment can be any type of power semiconductor device. The power semiconductor device 90 in this embodiment can be a MOSFET, a transistor, a field-effect transistor, etc. Exemplarily, the power semiconductor device 90 in this embodiment is a MOSFET.
[0037] Exemplarily, the test circuit of the power semiconductor device 90 includes: a current source module 10, a first voltage source module 20, a second voltage source module 30, a first short-circuit control module 40, a second short-circuit control module 50, a third short-circuit control module 60, a detection module 70, and a controller 80. The output terminal of the current source module 10 is connected to the input terminal of the power semiconductor device 90 and is used to provide a current signal to the input terminal of the power semiconductor device 90 according to the signal from the controller 80. The structure of the current source module 10 can be configured according to the actual application. It is understood that the current source module 10 can include a current source and a switching element, or it can include a voltage source, a conversion circuit, and a switching element, or it can only include a switching element. The current source is used to provide the current signal, and the switching element is used to control the flow and interruption of the current signal. If the current source module 10 only includes a switching element, the controller 80 generates the current signal.
[0038] The output terminal of the first voltage source module 20 is connected to the control terminal of the power semiconductor device 90, and is used to provide a voltage signal to the control terminal of the power semiconductor device 90 according to the signal of the controller 80. It can be understood that the first voltage source module 20 can be equipped with a voltage source and a switching element, or it can be equipped with only a switching element. If the first voltage source module 20 is equipped with only a switching element, the controller 80 generates a voltage signal. The output terminal of the second voltage source module 30 is connected to the input terminal of the power semiconductor device 90, and is used to provide a voltage signal to the input terminal of the power semiconductor device 90 according to the signal of the controller 80. The structure of the second voltage source module 30 can be the same as that of the first voltage source module 20, or it can be different from that of the first voltage source module 20. The structures of the first voltage source module 20 and the second voltage source module 30 can be set according to the actual application.
[0039] The first short-circuit control module 40 is disposed between the input terminal and the control terminal of the power semiconductor device 90, and is used to short-circuit the input terminal and the control terminal of the power semiconductor device 90 according to the signal of the controller 80; the second short-circuit control module 50 is disposed between the control terminal and the output terminal of the power semiconductor device 90, and is used to short-circuit the control terminal and the output terminal of the power semiconductor device 90 according to the signal of the controller 80; the third short-circuit control module 60 is disposed between the input terminal and the output terminal of the power semiconductor device 90, and is used to short-circuit the input terminal and the output terminal of the power semiconductor device 90 according to the signal of the controller 80.
[0040] Understandably, the first short-circuit control module 40, the second short-circuit control module 50, and the third short-circuit control module 60 can be any type of switching element, such as a switching transistor, a relay, or an optocoupler. The structures of each short-circuit control module can be identical or different. Exemplarily, all short-circuit control modules have the same structure, using switching transistors. Switching transistors enable high-speed switching and are not easily damaged, greatly improving the reliability of the circuit.
[0041] The detection module 70 is used to detect the parameters of the power semiconductor device 90. Specifically, the detection module 70 can detect various voltage signals and current signals of the power semiconductor device 90. Understandably, the detection module 70 can be used to detect various parameters of the power semiconductor device 90 according to the actual application. For example, by detecting the voltage between the control terminal and the output terminal of the power semiconductor device, the threshold voltage of the power semiconductor device 90 can be obtained. Furthermore, the detection module 70 monitors various parameters of the power semiconductor device 90 in real time and sets a safety threshold for the power semiconductor device 90 in the controller 80. When the parameter detected by the detection module 70 exceeds the safety threshold, the controller 80 determines that the power semiconductor device 90 has experienced an abnormal condition such as overvoltage, undervoltage, or overcurrent, and controls the corresponding module to shut down to protect the power semiconductor device 90, thus ensuring the reliability of the circuit.
[0042] The controller 80 is used to provide voltage signals to the control terminal and input terminal of the power semiconductor device 90 by controlling the first voltage source module 20 and the second voltage source module 30 respectively, to provide current signals to the input terminal of the power semiconductor device 90 by controlling the current source module 10, and to test the power semiconductor device 90 by controlling the on and off of each short-circuit control module and according to the parameters of the detection module 70.
[0043] Specifically, the controller 80 can obtain various parameters of the power semiconductor device 90 by controlling each module, such as the gate leakage current, gate threshold voltage, drain-source breakdown voltage, drain leakage current, and transconductance of the power semiconductor device 90. Furthermore, the controller 80 can obtain curves of the power semiconductor device based on these parameters by controlling each module, such as ID-VDS curves under different VGS, ID-VGS curves under constant VDS, Gfs-VGS curves under constant VDS, RDS(on)-ID curves under different VGS, RDS(on)-VGS curves under different IDs, VDS-VGS curves under different IDs, and IS-VS curves of the built-in diodes.
[0044] The controller 80 can also perform various experiments on the power semiconductor device 90 by controlling the various modules, such as the high temperature gate bias experiment of the power semiconductor device 90, the high temperature reverse bias experiment of the power semiconductor device 90, and the high temperature and high humidity reverse bias experiment of the power semiconductor device 90.
[0045] Furthermore, by controlling each module, the power semiconductor device 90 can be continuously subjected to various tests, and various parameters of the power semiconductor device 90 can be obtained through multiple tests, making the correlation between the various parameters stronger, which helps in the overall analysis and evaluation of the power semiconductor device 90.
[0046] The controller 80 can control each module according to the actual application. For example, if it is necessary to detect the drain-source turn-on voltage of the power semiconductor device 90, the controller 80 turns off each short-circuit control module, controls the first voltage source module 20 to provide voltage to the gate of the power semiconductor device 90, so that the power semiconductor device 90 remains on, controls the switching element in the current source module 10 to turn on and off according to a preset frequency, and controls the current source in the current source module 10 to gradually increase to the maximum current of the power semiconductor device 90 according to a preset ratio. When the switching element in the current source module 10 is on, the detection module 70 collects the voltage between the drain and source of the power semiconductor device 90 as the drain-source turn-on voltage of the power semiconductor device 90 under that current. It can be understood that the preset frequency, preset ratio and maximum current of the power semiconductor device 90 can be set according to the actual application.
[0047] For example, to conduct a high-temperature and high-humidity reverse bias test on the power semiconductor device 90, disconnect the first short-circuit control module 40, the third short-circuit control module 60, the first voltage source module 20, and the current source module 10. Control the first short-circuit control module 40 to turn on, control the second voltage source module 30 to provide a preset voltage to the drain of the power semiconductor device 90, control the switching element in the second voltage source module 30 to turn on and off at a preset frequency, and place the power semiconductor device 90 in a high-temperature and high-humidity environment to age the power semiconductor device 90. The preset voltage and preset frequency can be set according to the actual application.
[0048] Furthermore, multiple power semiconductor devices 90 can be set up for testing. Specifically, multiple power semiconductor devices 90 can be connected in parallel, and the controller 80 tests multiple power semiconductor devices 90 through various modules to ensure the consistency of the test.
[0049] Furthermore, for multiple power semiconductor devices 90, a switching transistor is set up as a short-circuit control module to connect with each power semiconductor device 90. When a single power semiconductor device 90 fails, the switching transistor connected to it is disconnected, thereby achieving individual protection for the power semiconductor device 90 and not affecting the testing of other power semiconductor devices 90.
[0050] The test circuit of the power semiconductor device 90 in this embodiment, through the control of various modules by the controller 80, can test various parameters of the power semiconductor device 90. It can also integrate multiple experiments to perform various experiments on the power semiconductor device 90, reducing the need for multiple test equipment, greatly reducing the research and development cost, simplifying the test process, reducing the need for manpower, reducing test errors caused by human operation, and ensuring the accuracy and reliability of the test results of the power semiconductor device 90 under different test conditions.
[0051] As an alternative solution, Figure 2 The diagram shown is another structural schematic of a test circuit for a power semiconductor device 90. Accordingly, Figure 3 As shown Figure 2 A circuit diagram of a test circuit for a power semiconductor device 90.
[0052] In one embodiment, such as Figure 2 and Figure 3 As shown, based on the above embodiment, the detection module 70 includes: a first voltage detection unit 701, a second voltage detection unit 702, and a current detection unit 703. The positive input terminal of the first voltage detection unit 701 is connected to the control terminal and the gate of the power semiconductor device 90. The negative output terminal of the first voltage detection unit 701 is connected to the output terminal and the source of the power semiconductor device 90. The output terminal of the first voltage detection unit 701 is electrically connected to the controller 80. The first voltage detection unit 701 is used to detect the voltage signal between the control terminal and the output terminal of the power semiconductor device 90. The first voltage detection unit 701 can be a voltage sensor, a voltage detection chip, etc., exemplarily, such as... Figure 3 As shown, the first voltage detection unit 701 is a voltage sensor Vg.
[0053] The positive terminal of the second voltage detection unit 702 is connected to the input terminal of the power semiconductor device 90, and the negative terminal of the second voltage detection unit 702 is connected to the output terminal of the power semiconductor device 90. The output terminal of the second voltage detection unit 702 is electrically connected to the controller 80. The second voltage detection unit 702 is used to detect the voltage signal between the input and output terminals of the power semiconductor device 90. The structure of the second voltage detection unit 702 can be the same as that of the first voltage detection unit 701, or it can be different from the structure of the first voltage detection unit 701. For example, as shown in the example... Figure 3 As shown, the second voltage detection unit 702 is a voltage sensor VS.
[0054] The input terminal of the current detection unit 703 is connected to the output terminal of the power semiconductor device 90, and the output terminal of the current detection unit 703 is electrically connected to the controller 80. The current detection unit 703 is used to detect the current signal at the output terminal of the power semiconductor device 90. The current detection unit 703 can be a sampling resistor or a current sensor; exemplary, for example... Figure 3 As shown, the current detection unit 703 is a current sensor I1.
[0055] The test circuit of the power semiconductor device 90 in this embodiment is equipped with various sensors to detect the voltage and current of the power semiconductor device 90. This allows the controller 80 to collect various parameters of the power semiconductor device 90 and monitor the power semiconductor device 90 in real time, preventing abnormalities such as overvoltage, undervoltage, or overcurrent from occurring and fully ensuring the safety of the power semiconductor device 90.
[0056] In one embodiment, such as Figure 2 and Figure 3 As shown, based on the above embodiment, the current source module 10 includes: a current source 101 and a first switch control unit 102. The input terminal of the first switch control unit 102 is connected to the output terminal of the current source 101, the output terminal of the first switch control unit 102 is connected to the input terminal of the power semiconductor device 90, and the control terminal of the first switch control unit 102 is electrically connected to the controller 80. Exemplarily, as shown... Figure 3 As shown, power semiconductor device 90 is a switching transistor (DUT), and current source 101 is a constant current source A1. The output of constant current source A1 can be controlled according to the actual application.
[0057] The second voltage source module 30 includes a second voltage source 301, and the input terminal of the first switch control unit 102 is connected to the output terminal of the second voltage source 301. The second voltage source 301 can be any type of voltage source; exemplary, the second voltage source 301 is a DC voltage source V2. The output of the DC voltage source V2 can be controlled according to the actual application.
[0058] The first switch control unit 102 can be any type of switching element. It can be a switching transistor, an optocoupler, or a relay. For example,... Figure 3 As shown, the first switch control unit 102 is a switch transistor S4. By using the first switch control unit 102 to control the output signals of the first voltage source 201 and the current source 101, the cost of the system is further reduced. As another embodiment, switch control units can also be set at the output terminals of the first voltage source 201 and the current source 101 respectively, and each switch control unit controls the output signals of the first voltage source 201 and the current source 101 respectively.
[0059] The first voltage source module 20 includes: a first voltage source 201 and a second switch control unit 202. The input terminal of the second switch control unit 202 is connected to the output terminal of the first voltage source 201. Exemplarily, the first voltage source 201 is as follows: Figure 3 The voltage source V1 is shown.
[0060] The output terminal of the second switch control unit 202 is electrically connected to the control terminal of the power semiconductor device 90, and the control terminal of the second switch control unit 202 is electrically connected to the controller 80. The structure of the second switch control unit 202 can be the same as that of the first switch control unit 102, or the structure of the second switch control unit 202 can be different from that of the first switch control unit 102. For example, the second switch control unit 202 is a switch transistor S1.
[0061] The controller 80 obtains the parameters of the power semiconductor device 90 by controlling the on and off of each switch transistor. For example, when switches S2, S3, and S5 are turned off, switches S1 and S4 are turned off, the first voltage source 201 rises at a preset frequency, the second voltage source 301 is 0V, and the current does not exceed the maximum current of the power semiconductor device 90. When the gate voltage of the power switch transistor reaches the preset value, the rise of the first voltage source 201 is stopped and switches S1 and S4 are turned off. At this time, the current signal collected by the current sensor of the detection module 70 is the gate leakage current of the power semiconductor device 90 when it is forward biased.
[0062] When switching transistors S3, S4, and S5 are disconnected and switching transistors S1 and S2 are closed, the first voltage source 201 rises at a preset frequency. When the current sensor of the detection module 70 detects that the source current of the power semiconductor device 90 exceeds the gate-to-source current value of the power semiconductor device 90, the value detected by the first voltage detection unit 701 is the gate threshold voltage of the power semiconductor device 90.
[0063] When switches S1, S2, and S5 are disconnected, and switches S3 and S4 are closed, the second voltage source 301 rises to the rated voltage of the power semiconductor device 90 at a preset frequency. The value of the current sensor is the source leakage current of the power semiconductor device 90.
[0064] Disconnect switches S2, S3, and S5, and close switch S1. The first voltage source 201 provides voltage to the gate of the power semiconductor device 90, keeping the power semiconductor device 90 on. Control switch S4 to turn on and off at a preset frequency. Control current source 101 to gradually increase to the maximum current of the power semiconductor device 90 according to a preset ratio. When switch S4 is closed, the voltage signal collected by the second voltage detection unit 702 is the drain-source turn-on voltage of the power semiconductor device 90 at that current. Furthermore, after the current source 101 rises to the maximum current of the power semiconductor device 90, the test should be turned off. All switches are turned off to ensure that the maximum current during the test does not exceed the operating range of the power semiconductor device 90.
[0065] The controller 80 can also enable the power semiconductor device 90 to perform various experiments by controlling each module. For example, it can disconnect the switching transistors S1, S2 and S5, close the switching transistor S3, provide a preset voltage to the drain of the power semiconductor device 90 through the second voltage source 301, control the switching transistor S4 to turn on and off at a preset frequency, place the power semiconductor device 90 in a high temperature and high humidity environment, and age the power semiconductor device 90.
[0066] Understandably, the above preset values can be set according to the actual application.
[0067] Furthermore, multiple power semiconductor devices 90 can be set up and tested simultaneously to ensure data consistency. In addition, for the multiple power semiconductor devices 90, each switch is connected to each power semiconductor device 90. When a single power semiconductor device 90 fails, the switch connected to it is disconnected to achieve individual protection of the power semiconductor device 90, so as not to affect the testing of other power semiconductor devices 90.
[0068] In this embodiment, the test circuit for the power semiconductor device 90 is configured with voltage and current sources 101 to provide voltage and current signals to the power device's switching transistors, ensuring circuit accuracy. By controlling the output signals of each voltage and current source 101 through the switching transistors, the voltage and current sources 101 can be continuously turned on, avoiding losses caused by the constant turning on and off of the voltage and current sources 101.
[0069] This application also provides a test apparatus for a power semiconductor device 90, which, by way of example, includes the test circuit for the power semiconductor device 90 described above.
[0070] In the several embodiments provided in this application, it should be understood that the disclosed apparatus and methods can also be implemented in other ways. The apparatus embodiments described above are merely illustrative. For example, the flowcharts and block diagrams in the accompanying drawings show the architecture, functionality, and operation of possible implementations of apparatus, methods, and computer program products according to various embodiments of this application. In this regard, each block in a flowchart or block diagram may represent a module, segment, or portion of code containing one or more executable instructions for implementing a specified logical function. It should also be noted that, in alternative implementations, the functions marked in the blocks may occur in a different order than those marked in the drawings. For example, two consecutive blocks may actually be executed substantially in parallel, and they may sometimes be executed in reverse order, depending on the functions involved. It should also be noted that each block in the block diagram and / or flowchart, and combinations of blocks in the block diagram and / or flowchart, can be implemented using a dedicated hardware-based system that performs the specified function or action, or using a combination of dedicated hardware and computer instructions.
[0071] In addition, the functional modules or units in the various embodiments of this application can be integrated together to form an independent part, or each module can exist independently, or two or more modules can be integrated to form an independent part.
[0072] If the aforementioned functions are implemented as software functional modules and sold or used as independent products, they can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of this application, in essence, or the part that contributes to the prior art, or a part of the technical solution, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions to cause a computer device (which may be a smartphone, personal computer, server, or network device, etc.) to execute all or part of the steps of the methods described in the various embodiments of this application.
[0073] The above description is merely a specific embodiment of this application, but the scope of protection of this application is not limited thereto. Any changes or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this application should be included within the scope of protection of this application.
Claims
1. A test circuit for a power semiconductor device, characterized by, The test circuit comprises a current source module, a first voltage source module, a second voltage source module, a first short-circuit control module, a second short-circuit control module, a third short-circuit control module, a detection module and a controller, wherein the detection module is configured to detect parameters of the power semiconductor device. Each of the short-circuit control modules is arranged at different combinations between the input terminal, the control terminal and the output terminal of the power semiconductor device. The controller is configured to provide a voltage signal to the control terminal and the input terminal of the power semiconductor device by controlling the first voltage source module and the second voltage source module, to provide a current signal to the input terminal of the power semiconductor device by controlling the current source module, and to control the on and off of each of the short-circuit control modules, and to test the power semiconductor device according to the parameters of the detection module. The testing of the power semiconductor device comprises obtaining parameters of the power semiconductor device and / or performing experiments on the power semiconductor device.
2. The test circuit for a power semiconductor device according to claim 1, characterized by, If the number of the power semiconductor devices is N, N is a positive integer greater than 1, the test circuit of the power semiconductor device further comprises N-1 first short-circuit control modules, N-1 second short-circuit control modules and N-1 third short-circuit control modules, each of the first short-circuit control modules is arranged between the input terminal and the control terminal of each of the power semiconductor devices, each of the second short-circuit control modules is arranged between the control terminal and the output terminal of each of the power semiconductor devices, and each of the third short-circuit control modules is arranged between the input terminal and the output terminal of each of the power semiconductor devices.
3. The test circuit for a power semiconductor device according to claim 1, characterized by, Each of the short-circuit control modules has the same structure and comprises a switch tube.
4. The test circuit for a power semiconductor device according to claim 1, characterized by, Each of the switch tubes is arranged at different combinations between the input terminal, the control terminal and the output terminal of the power semiconductor device, and the control terminal of each of the switch tubes is electrically connected to the controller. The detection module comprises a first voltage detection unit and a second voltage detection unit.
5. The test circuit for a power semiconductor device according to claim 1, characterized by, The input terminals of the first voltage detection unit are respectively connected to the control terminal and the output terminal of the power semiconductor device, and the output terminal of the first voltage detection unit is electrically connected to the controller. The input terminals of the second voltage detection unit are respectively connected to the input terminal and the output terminal of the power semiconductor device, and the output terminal of the second voltage detection unit is electrically connected to the controller. The detection module further comprises a current detection unit, the input terminal of the current detection unit is connected to the output terminal of the power semiconductor device, and the output terminal of the current detection unit is electrically connected to the controller.
6. The test circuit for a power semiconductor device according to claim 5, characterized by The current source module comprises a current source and a first switch control unit, the input terminal of the first switch control unit is connected to the output terminal of the current source, the output terminal of the first switch control unit is connected to the input terminal of the power semiconductor device, and the control terminal of the first switch control unit is electrically connected to the controller.
7. The test circuit for a power semiconductor device according to claim 1, characterized by, 8. The test circuit for a power semiconductor device according to claim 1, characterized by, The first voltage source module comprises a first voltage source and a second switch control unit, an input end of the second switch control unit is connected to an output end of the first voltage source, an output end of the second switch control unit is electrically connected to a control end of the power semiconductor device, and a control end of the second switch control unit is electrically connected to the controller.
9. The test circuit for a power semiconductor device according to claim 7, characterized by, The second voltage source module comprises a second voltage source, and an input end of the first switch control unit is connected to an output end of the second voltage source.
10. A testing apparatus of a power semiconductor device, characterized by comprising: The test device of the power semiconductor device comprises the test circuit of the power semiconductor device according to any one of claims 1-9.