Ultrasonic transmitting device and device

Abstract

The utility model discloses an ultrasonic transmitting device and device. The device comprises a vibration area and a frame area, wherein the frame area is arranged around the vibration area; the vibration area comprises a plurality of device rows; a plurality of ultrasonic transduction units are arranged at intervals in each device row along a first direction, and the ultrasonic transduction units in two adjacent device rows are arranged in a staggered manner in a second direction; each ultrasonic transduction unit comprises a substrate, a bottom electrode layer, a piezoelectric material layer and a top electrode layer which are stacked; wherein the bottom electrode layer has a first orthographic projection on the substrate, and the top electrode layer has a second orthographic projection on the substrate; the area of the first orthographic projection is larger than that of the second orthographic projection, and the first orthographic projection completely covers the second orthographic projection; the shape of the second orthographic projection is rectangular, and the first orthographic projection extends out of the second orthographic projection at the positions of at least one group of opposite sides in the second orthographic projection. According to the embodiment of the utility model, the output capability of the ultrasonic transmitting device under the same unit area can be improved.

Description

TECHNICAL FIELD

[0001] The utility model relates to micro -electromechanical system technical field especially relates to an ultrasonic wave transmitting device and device. BACKGROUND

[0002] The piezoelectric micromachined ultrasonic transducer (pMUT) based on the micro-electro-mechanical system (MEMS) process is an important device, which can be applied to the application fields of robot obstacle avoidance, ultrasonic gesture recognition, ultrasonic under-screen fingerprint recognition, ultrasonic imaging and the like.

[0003] At present, most pMUT units adopt circular design and are arrayed on a wafer to form a phased array pMUT ultrasonic module.However, the circular array is limited by the shape, and when densely arranged, there is a large space loss, resulting in poor output capacity of the pMUT ultrasonic module under the same unit area. UTILITARY MODEL

[0004] The utility model provides a kind of ultrasonic wave transmitting device and device, to solve the problem of poor output capacity of pMUT ultrasonic module under the same unit area.

[0005] According to an aspect of the utility model, an ultrasonic wave transmitting device is provided, comprising: a vibration area and a frame area, the frame area is arranged around the vibration area;The vibration area includes a plurality of device rows;

[0006] A plurality of ultrasonic transduction units are arranged in each device row along a first direction, and a support column is arranged between adjacent two ultrasonic transduction units;Each device row is arranged along a second direction, and each ultrasonic transduction unit in adjacent two device rows is staggered arranged in the second direction;Wherein, the first direction is perpendicular to the second direction;

[0007] Each ultrasonic transduction unit includes a substrate, a bottom electrode layer, a piezoelectric material layer and a top electrode layer arranged in layers;

[0008] Wherein, the bottom electrode layer has a first orthographic projection on the substrate, and the top electrode layer has a second orthographic projection on the substrate;The area of the first orthographic projection is greater than the area of the second orthographic projection, and the first orthographic projection completely covers the second orthographic projection;

[0009] The shape of the second orthographic projection is rectangular, and the first orthographic projection extends beyond the second orthographic projection at the position of at least one pair of opposite sides in the second orthographic projection.

[0010] Optionally, in the first direction, the bottom electrode layer of each of the ultrasonic transducing units comprises a main body and first extensions on both sides of the main body;

[0011] The first extensions have projections on the substrate along the first direction on both sides of the second projection; the length of the first extensions is equal to the width of the top electrode layer, and the width of the first extensions is less than half of the length of the top electrode layer;

[0012] The ultrasonic transducing units in adjacent two device rows are closely arranged.

[0013] Optionally, in the second direction, the bottom electrode layer of each of the ultrasonic transducing units comprises a main body and second extensions on both sides of the main body;

[0014] The second extensions have projections on the substrate along the second direction on both sides of the second projection; the length of the second extensions is equal to the length of the top electrode layer, and the width of the second extensions is less than half of the width of the top electrode layer;

[0015] The ultrasonic transducing units in adjacent two device rows are closely arranged.

[0016] Optionally, the bottom electrode layer of each of the ultrasonic transducing units comprises a main body, first extensions on both sides of the main body along the first direction, and second extensions on both sides of the main body along the second direction;

[0017] The first extensions and the second extensions form corner portions at positions corresponding to corners of the top electrode layer;

[0018] The corner portions are right-angled, and along diagonal directions of the top electrode layer, two corner portions corresponding to adjacent two ultrasonic transducing units are embeddedly arranged.

[0019] Optionally, the top electrode layers in each of the ultrasonic transducing units in a same device row are connected in series;

[0020] The top electrode layers connected in series in each of the ultrasonic transducing units of every at least two device rows are connected in parallel.

[0021] Optionally, the plurality of device rows comprises a first device row group and a second device row group;

[0022] The first device row group and the second device row group each comprise at least one device row; along the second direction, the first device row group is located on both sides of the second device row group;

[0023] The series connection of the top electrode layers of each of the device rows in the first device row group is connected in parallel to a first electrode, and the series connection of the top electrode layers of each of the device rows in the second device row group is connected in parallel to a second electrode.

[0024] Optionally, the first device row group and the second device row group are arranged in axial symmetry about a central axis of the ultrasonic wave emitting device in the second direction.

[0025] Optionally, the ultrasonic wave emitting device further comprises two ground electrodes.

[0026] The two ground electrodes are respectively located at top corner positions of the frame region in a diagonal direction, and the first electrode and the second electrode are respectively located at opposite edge positions of the frame region.

[0027] The two ground electrodes are respectively used for grounding each of the device rows in the first device row group electrically connected to the first electrode and grounding each of the device rows in the second device row group electrically connected to the second electrode.

[0028] Optionally, the support column comprises a substrate and an insulating layer arranged in a stack.

[0029] A cavity is arranged between two adjacent support columns, and the cavity is located on a side of each of the ultrasonic wave transducing units away from the bottom electrode layer.

[0030] According to another aspect of the present application, an ultrasonic wave emitting device is provided, comprising the ultrasonic wave emitting device according to any embodiment of the first aspect.

[0031] The ultrasonic wave emitting device provided by the embodiments of the present application has a plurality of device rows arranged in the vibration area of the central region, each device row comprises a plurality of ultrasonic wave transducing units arranged at intervals in the first direction, and a support column is arranged in the interval. The ultrasonic wave transducing units in the two adjacent device rows arranged in the second direction are staggered in the second direction. In addition, each ultrasonic wave transducing unit comprises a substrate, a bottom electrode layer, a piezoelectric material layer and a top electrode layer arranged in a stack. The first orthographic projection area of the bottom electrode layer is larger than the second orthographic projection area of the top electrode layer, the first orthographic projection completely covers the second orthographic projection, and the first orthographic projection of the bottom electrode layer is designed to extend to a position outside the second orthographic projection of the top electrode layer, so as to fully utilize the gap space between the top electrode layer and the piezoelectric material layer in each ultrasonic wave transducing unit, thereby increasing the effective vibration area in the vibration area, improving the duty cycle, and improving the output capacity of the ultrasonic wave emitting device per unit area.

[0032] It should be appreciated that the content described in this part is not intended to identify key or important features of the embodiments of the present application, nor is it used to limit the scope of the present application. Other features of the present application will become apparent from the following description. BRIEF DESCRIPTION OF DRAWINGS

[0033] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed in the embodiment description will be briefly introduced. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative labor on the basis of these drawings.

[0034] Figure 1 is a schematic diagram of an arrangement structure of a pMUT unit provided by the prior art;

[0035] Figure 2 is a schematic diagram of a top view structure of an ultrasonic wave emitting device according to an embodiment of the present application;

[0036] Figure 3 is a schematic diagram of a cross-sectional structure along A-A' direction of an ultrasonic wave emitting device according to an embodiment of the present application;

[0037] Figure 4 is a schematic diagram of an enlarged structure of the dotted circle part in Figure 2

[0038] Figure 5 is another schematic diagram of an enlarged structure of the dotted circle part in Figure 2

[0039] Figure 6 is another schematic diagram of an enlarged structure of the dotted circle part in Figure 2

[0040] Figure 7 is a schematic diagram of a top view structure of another ultrasonic wave emitting device according to an embodiment of the present application;

[0041] Figure 8 is a schematic diagram of a top view structure of another ultrasonic wave emitting device according to an embodiment of the present application;

[0042] Figure 9 is a schematic diagram of a flow of a preparation method of an ultrasonic wave emitting device according to an embodiment of the present application;

[0043] Figure 10 is a schematic diagram of a cross-sectional structure along A-A' direction corresponding to each step in Figure 9 Figure 2 DETAILED DESCRIPTION​​​​​

[0044] In order to make the person skilled in the art better understand the technical scheme of the present application, the technical scheme in the embodiments of the present application will be described clearly and completely below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all the other embodiments obtained by the person skilled in the art without creative labor should belong to the protection scope of the present application.

[0045] It should be noted that the terms "first", "second" and the like in the description and claims of the present application and the above drawings are used to distinguish similar objects, and do not have to be used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged under appropriate circumstances, so that the embodiments of the present application described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "include" and "have" and any variations thereof are intended to cover non-exclusive inclusion, for example, a process, method, system, product or device including a series of steps or units does not have to be limited to those steps or units clearly listed, but can include other steps or units not clearly listed or inherent to these processes, methods, products or devices.

[0046] As described in the background, pMUT is an important device, and its structure usually includes a silicon substrate layer, a lower electrode layer, a piezoelectric film layer and an upper electrode layer, which together constitute the diaphragm of the device. The working principle of pMUT is related to the piezoelectric effect of the piezoelectric film layer. When the positive piezoelectric effect occurs, that is, the diaphragm receives the sound wave, the ultrasonic wave causes the diaphragm to vibrate, constantly producing up and down reciprocating deformation, periodically stretching or compressing the piezoelectric film layer, so that the piezoelectric film layer generates electric charge, and the external circuit can receive the changing electric charge signal through the upper electrode and the lower electrode. When the inverse piezoelectric effect occurs, the external circuit applies a high-frequency alternating voltage (such as a sine wave) to the upper electrode and the lower electrode, which generates an alternating electric field in the piezoelectric film layer. The electric field causes the piezoelectric film layer to produce stretching or compression deformation, thereby driving the diaphragm to vibrate and produce sound waves.

[0047] Recently, ultrasonic focusing and directionality as an advanced technology is gradually widely used in various scenes. The focusing of ultrasonic waves refers to that in an array composed of pMUT devices, different pMUT units are applied with driving signals with preset phase differences, so that each pMUT unit emits ultrasonic waves with different phase differences. Subsequently, due to the interference principle of ultrasonic waves, sound waves with intensity superposition are generated at the preset focus point, and sound waves with intensity cancellation are generated at the remaining part. This technology is widely used in the fields of radar, ultrasonic imaging, ultrasonic audio, ultrasonic air haptics, etc.

[0048] At present, most of the pMUT units adopt a circular design and are arranged in an array on a wafer to form a pMUT ultrasonic module of a phased array. The pMUT phased array module usually needs multiple groups and a large number of pMUT ultrasonic units, however, the circular array is limited by the shape and has a large space loss when densely arranged. Figure 1 is a schematic diagram of an arrangement structure of a pMUT unit provided by the prior art. As shown in Figure 1 , the circular pMUT units 01 are arranged in an array on the wafer 02. Due to the circular shape of the pMUT units 01, there is a large space loss when multiple pMUT units 01 are densely arranged, for example, the circular pMUT units 01 are effective diaphragm parts, and there is a large area of invalid part between the adjacent two pMUT units 01 along the diagonal direction. The sound pressure level (SPL) of the emitted sound pressure can be calculated by formula (1), which can be expressed in the following form:

[0049] SPL∝A·f·d(1)

[0050] Wherein, A represents the effective diaphragm area, f represents the signal frequency, and d represents the equivalent vibration displacement of the diaphragm at the signal frequency.

[0051] In summary, when other conditions are the same, the larger the effective vibration area is, the stronger the output capability of the ultrasonic emission module is. The circular pMUT units 01 densely arranged cause a large space loss, thereby resulting in poor output capability of the pMUT ultrasonic module under the same unit area.

[0052] Based on the above technical problems, the embodiments of the present application provide the following technical solutions:

[0053] The embodiments of the present application provide an ultrasonic wave emitting device. Figure 2 is a top view structural schematic diagram of an ultrasonic wave emitting device provided by the embodiments of the present application, Figure 3 is a sectional view structural schematic diagram of the ultrasonic wave emitting device provided by the embodiments of the present application along the A-A' direction. Combined with Figure 2 and Figure 3 , the ultrasonic wave emitting device comprises: a vibration area 100 and a frame area 200, the frame area 200 is arranged around the vibration area 100; the vibration area 100 comprises a plurality of device rows 101.

[0054] A plurality of ultrasonic wave transducing units 102 are arranged in each device row 101 along a first direction, and a support column 103 is arranged between the adjacent two ultrasonic wave transducing units 102; each device row 101 is arranged along a second direction, and each ultrasonic wave transducing unit 102 in the adjacent two device rows 101 is arranged staggeredly in the second direction; wherein the first direction is perpendicular to the second direction.

[0055] Each ultrasonic transducing unit 102 comprises a substrate 10, a bottom electrode layer 20, a piezoelectric material layer 30 and a top electrode layer 40 which are stacked; the bottom electrode layer 20 has a first orthographic projection on the substrate 10, and the top electrode layer 40 has a second orthographic projection on the substrate 10; the area of the first orthographic projection is greater than the area of the second orthographic projection, and the first orthographic projection completely covers the second orthographic projection; the shape of the second orthographic projection is rectangular, and the first orthographic projection extends beyond the second orthographic projection at the position of at least one pair of opposite sides in the second orthographic projection.

[0056] Specifically, Figure 2 The top view structure of the front surface of the ultrasonic transmitting device is shown, referring to Figure 2 The central region of the ultrasonic transmitting device is a vibration region 100, and the edge region surrounding the central region is a frame region 200. The vibration region 100 is the main vibration functional region of the ultrasonic transmitting device, and the frame region 200 is the region used for supporting the ultrasonic transmitting device. Since the ultrasonic transmitting device comprises a plurality of ultrasonic transducing units 102, and the plurality of ultrasonic transducing units 102 are arranged in a specific shaped array, a plurality of device rows 101 are arranged in the vibration region 100, the device rows 101 extend along a first direction, and each device row 101 is densely arranged in parallel along a second direction. The first direction and the second direction are perpendicular to each other, and exemplarily, the first direction can be the X direction, and the second direction is the Y direction; or the first direction can be the Y direction, and the second direction is the X direction, which is not limited herein. In the embodiment of the present application, the structure of the ultrasonic transmitting device is described by taking the first direction as the X direction and the second direction as the Y direction as an example.

[0057] A plurality of ultrasonic transducing units 102 are arranged in each device row 101, and a support column 103 is arranged between adjacent two ultrasonic transducing units 102. One support column 103 can be shared by two ultrasonic transducing units 102, and is used for supporting the adjacent two ultrasonic transducing units 102 in the same device row 101. That is, the region where each support column 103 in the vibration region 100 is located is an invalid region. In adjacent two device rows 101, the ultrasonic transducing units 102 in each device row 101 are staggered arranged in the second direction, that is, in the second direction, each column also comprises a plurality of ultrasonic transducing units 102 arranged at intervals, and between adjacent two ultrasonic transducing units 102 in the second direction, there is also a support column 103, and the arrangement is in a honeycomb-like structure.

[0058] Referring to Figure 3, the device silicon in the wafer is used to prepare the diaphragm of the ultrasonic transducing unit 102, and the ultrasonic transducing unit 102 is provided with the substrate 10, the bottom electrode layer 20, the piezoelectric material layer 30 and the top electrode layer 40 arranged in a stack, i.e., forms the diaphragm, which is the main structure for reciprocating vibration in the thickness direction. Among them, the area of the bottom electrode layer 20 is equal to that of the substrate 10, the area of the top electrode layer 40 is equal to that of the piezoelectric material layer 30, and the area of the bottom electrode layer 20 and the substrate 10 is greater than that of the top electrode layer 40 and the piezoelectric material layer 30. Therefore, by designing the shape of the bottom electrode layer 20 and the substrate 10, the space on the ultrasonic transmitting device can be reasonably utilized, the space loss can be reduced, and the effective vibration area can be increased, thereby facilitating the improvement of the output capacity of the ultrasonic transmitting device under the same unit area.

[0059] Specifically, in combination with Figure 2 and Figure 3 , the bottom electrode layer 20 has a first orthographic projection on the substrate 10, and the top electrode layer 40 has a second orthographic projection on the substrate 10. The shape of the top electrode layer 40 can be rectangular, i.e., the shape of the second orthographic projection is rectangular; the first orthographic projection completely covers the second orthographic projection, and the area of the first orthographic projection exceeds that of the second orthographic projection. Exemplarily, the first orthographic projection can extend to a position outside at least one pair of opposite sides of the second orthographic projection, i.e., the bottom electrode layer 20 and the substrate 10 can extend to a part outside the top electrode layer 40 and the piezoelectric material layer 30, so as to fully utilize the gap space between the top electrode layer 40 and the piezoelectric material layer 30 of each ultrasonic transducing unit 102, thereby increasing the effective vibration area in the vibration region 100, reducing the area of the invalid region occupied by the support column 103, and further improving the output capacity of the ultrasonic transmitting device under the same unit area. It should be noted that Figure 2 only represents the ultrasonic transducing unit 102 in a schematic graph, shows the arrangement mode of each ultrasonic transducing unit 102, and does not represent the specific shape of each ultrasonic transducing unit 102.

[0060] The ultrasonic wave emitting device provided in the embodiment of the utility model, multiple device rows are arranged in the vibration area of the central area, each device row contains multiple ultrasonic wave transducing units arranged at intervals along the first direction, and a supporting column is arranged in the interval. The ultrasonic wave transducing units in the adjacent two device rows arranged along the second direction are staggered arranged in the second direction. In addition, each ultrasonic wave transducing unit contains a substrate, a bottom electrode layer, a piezoelectric material layer and a top electrode layer arranged in layers. The first orthographic projection area of the bottom electrode layer is greater than the second orthographic projection area of the top electrode layer, the first orthographic projection completely covers the second orthographic projection, and the first orthographic projection of the bottom electrode layer is designed to extend to a position outside the second orthographic projection of the top electrode layer, so as to fully utilize the gap space between the top electrode layer and the piezoelectric material layer in each ultrasonic wave transducing unit, thereby increasing the effective vibration area in the vibration area, improving the duty cycle, and improving the output capacity of the ultrasonic wave emitting device under the same unit area.

[0061] Optionally, Figure 4 is Figure 2 An enlarged structure schematic view of the part of the dashed line in the middle. On the basis of the above-mentioned embodiment, as shown in the figure, Figure 4 The bottom electrode layer 20 of each ultrasonic wave transducing unit 102 includes a main body part 21 and a first extension part 22 located on both sides of the main body part 21 in the first direction.

[0062] The orthographic projection of the first extension part 22 on the substrate 10 is located on both sides of the second orthographic projection in the first direction; the length of the first extension part 22 is equal to the width of the top electrode layer 40, and the width of the first extension part 22 is less than half the length of the top electrode layer 40; each ultrasonic wave transducing unit 102 in the adjacent two device rows 101 is arranged closely.

[0063] Specifically, the area of the bottom electrode layer 20 is greater than the area of the top electrode layer 40, and the bottom electrode layer 20 can include the main body part 21 and the first extension part 22. The area of the main body part 21 is equal to the area of the top electrode layer 40, and the orthographic projection of the main body part 21 on the substrate 10 completely coincides with the second orthographic projection of the top electrode layer 40 on the substrate 10. The first extension part 22 can be arranged on both sides of the main body part 21 in the first direction, and the orthographic projection of the first extension part 22 on the substrate 10 is located on both sides of the second orthographic projection in the first direction. In the second direction, no gap is arranged between the adjacent two device rows 101, and the ultrasonic wave transducing units 102 are arranged densely to arrange more ultrasonic wave transducing units 102 in the same unit area. The length of the first extension part 22 is equal to the width of the second orthographic projection of the top electrode layer 40 on the substrate 10, and the width of the first extension part 22 is less than half the length of the top electrode layer 40. Figure 4The length d in the figure represents, and the width L1 of the first extension 22 is set to be less than half of the length L2 of the top electrode layer 40, so that a certain space is still reserved between the two adjacent ultrasonic transducing units 102 in the same device row 101 for setting the support column 103, and the effective vibration area can be increased to a certain extent by setting the first extension 22, which is beneficial to improve the output capability of the ultrasonic transmitting device. It should be noted that the first extension 22 includes two parts, which are arranged in the second direction with an interval, and the interval is used to set the wiring for connecting the top electrode layers 40 extending in the first direction.

[0064] Optionally, Figure 5 is Figure 2 Another enlarged structure diagram of the dashed circle part in the figure. On the basis of the above embodiments, as shown in the figure, Figure 5 In the second direction, the bottom electrode layer 20 of each ultrasonic transducing unit 102 includes a main body part 21 and a second extension 23 located on both sides of the main body part 21.

[0065] The second extension 23 is arranged on the substrate 10, and the projection of the second extension 23 in the second direction is located on both sides of the second projection. The length of the second extension 23 is equal to the length of the top electrode layer 40, and the width of the second extension 23 is less than half of the width of the top electrode layer 40. The two adjacent ultrasonic transducing units 102 in the same device row 101 are closely arranged.

[0066] Specifically, the bottom electrode layer 20 can also include a main body part 21 and a second extension 23, wherein the area of the main body part 21 is equal to the area of the top electrode layer 40, and the projection of the main body part 21 on the substrate 10 is completely coincident with the second projection of the top electrode layer 40 on the substrate 10. The second extension 23 is arranged on both sides of the main body part 21 in the second direction, so that the projection of the second extension 23 on the substrate 10 is located on both sides of the second projection in the second direction. The length of the second extension 23 is equal to the length of the top electrode layer 40, which can be represented by the length D in the figure, and the width L3 of the second extension 23 is set to be less than half of the width L4 of the top electrode layer 40, so that a certain space is reserved between the two adjacent ultrasonic transducing units 102 in the second direction for setting the support column 103, and the effective vibration area can be increased to a certain extent by setting the second extension 23, which is beneficial to improve the output capability of the ultrasonic transmitting device. Figure 5

[0067] Optionally, Figure 6 is Figure 2 Another enlarged structure diagram of the dashed circle part in the figure. On the basis of the above embodiments, as shown in the figure, Figure 6 ​As shown, the bottom electrode layer 20 of each ultrasonic transducing unit 102 comprises a main body part 21, a first extension part 22 located on both sides of the main body part 21 along a first direction, and a second extension part 23 located on both sides of the main body part 21 along a second direction.

[0068] The first extension part 22 and the second extension part 23 are formed with a corner part 24 at a position corresponding to a top corner of the top electrode layer 40; the corner part 24 is a right angle shape, and along a diagonal direction of the top electrode layer 40, two corner parts 24 corresponding to adjacent two ultrasonic transducing units 102 are arranged in a fitting manner.

[0069] Specifically, the bottom electrode layer 20 can also comprise the main body part 21 and the first extension part 22 and the second extension part 23 surrounding the main body part 21, wherein the length of the first extension part 22 is equal to the width of the top electrode layer 40, and the length of the second extension part 23 is equal to the length of the top electrode layer 40. In this way, the first extension part 22 and the second extension part 23 are formed with a corner part 24 at a position corresponding to each top corner of the top electrode layer 40, and the corner part 24 is a right angle shape, so that each ultrasonic transducing unit 102 is in a quadrangular shape with four top corners recessed inward. Designing the ultrasonic transducing unit 102 in a quadrangular shape can make the adjacent two ultrasonic transducing units 102 in the diagonal direction in each device row 101 arranged in a fitting manner at the corner part 24, realize the dense arrangement of each ultrasonic transducing unit 102, and further increase the effective vibration area, so as to effectively improve the output capability of the ultrasonic transmitting device.

[0070] Optionally, Figure 7 is another top view structural schematic diagram of an ultrasonic transmitting device provided by the embodiment of the present application. Based on the above-mentioned embodiments, as shown in Figure 7 , the top electrode layers 40 in each ultrasonic transducing unit 102 in the same device row 101 are connected in series; and the top electrode layers 40 connected in series in each ultrasonic transducing unit 102 of at least two device rows 101 are connected in parallel.

[0071] Specifically, based on the quadrangular shape and the dense arrangement of each ultrasonic transducing unit 102 provided by the above-mentioned embodiments of the present application, the wiring connection mode of the top electrode layer 40 of each ultrasonic transducing unit 102 is designed accordingly. The top electrode layers 40 of each ultrasonic transducing unit 102 in the same device row 101 are connected in series through metal wiring, and the metal wiring of at least two device rows 101 is connected together in the frame area 200, so as to realize the parallel connection of each top electrode layer 40 of at least two device rows 101, input the driving signal with the corresponding phase to each top electrode layer 40 in the parallel connected device row 101, realize the simple wiring mode of the array setting of the ultrasonic transducing unit 102, and effectively reduce the risk of short circuit.

[0072] Optionally, on the basis of the above embodiments, continuing to refer to Figure 7 , the plurality of device rows 101 comprises a first device row group 111 and a second device row group 112.

[0073] The first device row group 111 and the second device row group 112 each comprises at least one device row 101; along the second direction, the first device row group 111 is located on both sides of the second device row group 112; the series connection of the top electrode layers 40 of each device row 101 located in the first device row group 111 is connected in parallel to the first electrode 113, and the series connection of the top electrode layers 40 of each device row 101 located in the second device row group 112 is connected in parallel to the second electrode 114.

[0074] Specifically, the device rows 101 can be divided into different device row groups. For example, the plurality of device rows 101 can be divided into a first device row group 111 and a second device row group 112, and the number of the first device row group 111 and the number of the second device row group 112 each comprises at least one, which can be set according to the actual design needs of the ultrasonic wave emitting device, and is not limited herein. At least one first device row group 111 can be electrically connected to the first electrode 113, and at least one second device row group 112 can be electrically connected to the second electrode 114. The first device row group 111 and the second device row group 112 each can comprise at least one device row 101 arranged continuously. The same phase driving signal can be applied to each device row 101 in at least one first device row group 111, and similarly, the same phase or different phase driving signal can be applied to each device row 101 in at least one second device row group 112. For example, the first device row group 111 and the second device row group 112 are arranged in axial symmetry about the central axis of the ultrasonic wave emitting device in the second direction. Referring to Figure 7 , which shows the case that the ultrasonic wave emitting device comprises one second device row group 112 and two first device row groups 111, and each first device row group 111 comprises 2 device rows 101, and the second device row group 112 comprises 3 device rows 101. The central axis of the ultrasonic wave emitting device in the second direction can be represented by the dashed line in Figure 7 , the second device row group 112 is located at the center position of the central axis, and the position of the second device row 101 in the second device row group 112 coincides with the central axis, and the two first device row groups 111 are respectively located on both sides of the second device row group 112 in the second direction, so that the ultrasonic wave emitting device as a whole forms an axial symmetric wiring connection mode about the central axis. Thus, different phase driving signals are applied to each device row 101 included in the first device row group 111 and each device row 101 included in the second device row group 112, i.e. driving signals with phase difference are applied, so that based on the ultrasonic wave interference principle, the focusing of the emitted ultrasonic wave can be realized.

[0075] Optionally, on the basis of the above embodiments, continuing to refer to Figure 7 The ultrasonic wave emitting device further comprises two ground electrodes 115.

[0076] The two ground electrodes 115 are respectively located at the top corner positions of the frame area 200 along the diagonal direction, and the first electrode 113 and the second electrode 114 are respectively located at the opposite edge positions of the frame area 200; the two ground electrodes 115 are respectively used for grounding each device row 101 in the first device row group 111 electrically connected with the first electrode 113 and grounding each device row 101 in the second device row group 112 electrically connected with the second electrode 114.

[0077] Specifically, the two ground electrodes 115 corresponding to the first device row group 111 and the second device row group 112 are arranged in the frame area 200, so as to realize grounding of each device row 101 in the first device row group 111 and grounding of each device row 101 in the second device row group 112, and ensure the safety of the ultrasonic wave emitting device during work.

[0078] Optionally, Figure 8 is a top view structural schematic diagram of another ultrasonic wave emitting device provided by the embodiment of the present application. On the basis of the above embodiments, in combination with Figure 8 and Figure 3 The support column 103 comprises a substrate 50 and an insulating layer 60 which are stacked.

[0079] A cavity 104 is arranged between the two adjacent support columns 103, and the cavity 104 is located at the side of the base 10 of each ultrasonic wave transducing unit 102 away from the bottom electrode layer 20.

[0080] Specifically, Figure 8 The top view structure of the back of the ultrasonic wave emitting device is shown. The interval between the two ultrasonic wave transducing units 102 adjacent in the first direction corresponding to the front of the ultrasonic wave emitting device is provided with a support column 103, the substrate silicon in the wafer is used as the substrate 50, and the silicon dioxide in the wafer is used as the insulating layer 60, so as to form the support column 103. The substrate 50 and the insulating layer 60 between the two adjacent support columns 103 are etched, so as to form the cavity 104, so that the ultrasonic wave transducing unit 102 located directly above the cavity 104 can reciprocate up and down.

[0081] The embodiment of the present application further provides an ultrasonic wave emitting device, which comprises the ultrasonic wave emitting device provided by any of the embodiments of the present application, and has similar working principle and generated effect, which will not be repeated here.

[0082] The embodiment of the present application further provides an ultrasonic wave emitting device preparation method. Figure 9It is a flowchart of a preparation method of an ultrasonic wave emitting device provided by the embodiment of the utility model, Figure 10 is Figure 9 corresponding to each step in the method Figure 2 A-A' direction of the cross-sectional structure schematic view. In combination with Figure 9 and Figure 10 The ultrasonic wave emitting device preparation method specifically comprises the following steps:

[0083] S110, providing a wafer 10.

[0084] Exemplarily, the wafer comprises a substrate layer, an insulating layer and a base layer which are arranged in a stack; wherein the substrate layer and the base layer are both silicon materials, and the insulating layer is a silicon dioxide material. Specifically, a wafer with a silicon layer arranged on an insulating substrate, namely an SOI (Silicon-On-Insulator) wafer, is adopted. The SOI wafer comprises a substrate silicon layer, a silicon dioxide layer and a device silicon layer which are arranged in a stack.

[0085] S120, forming a bottom electrode layer 20 on the surface of the wafer 10.

[0086] Specifically, a metal material is sputtered on the surface of the wafer by a magnetron sputtering method to form a bottom electrode layer covering the whole wafer.

[0087] S130, forming a piezoelectric material layer 30 on the side of the bottom electrode layer 20 away from the wafer 10; wherein the piezoelectric material layer 30 is located at the positions corresponding to each ultrasonic wave transducing unit and the frame area.

[0088] Specifically, a piezoelectric material layer corresponding to each ultrasonic wave transducing unit in the structure of the ultrasonic wave emitting device is formed on the surface of the bottom electrode layer. Wherein the piezoelectric material layer corresponding to each ultrasonic wave transducing unit forms a part of the diaphragm and is an effective vibration area; the piezoelectric material layer corresponding to the frame area is an ineffective area. Exemplarily, the material of the piezoelectric material layer can adopt lead zirconate titanate.

[0089] S140, forming a top electrode layer 40 on the side of the piezoelectric material layer 30 away from the bottom electrode layer 20; wherein the top electrode layer 40 is located at the positions corresponding to each ultrasonic wave transducing unit.

[0090] S150, patterning the bottom electrode layer 20 and the wafer 10 to form ultrasonic wave transducing units.

[0091] Specifically, the bottom electrode layer and the wafer arranged on the whole surface are patterned to divide the bottom electrode layer and the wafer according to each ultrasonic wave transducing unit. The top electrode layer cooperates with the bottom electrode layer to receive a driving signal acting on the piezoelectric material layer corresponding to each ultrasonic wave transducing unit.

[0092] The patterned piezoelectric material layer formed based on the above method is patterned according to the shape of the bottom electrode layer exposed by the pattern of the piezoelectric material layer, and the bottom electrode layer and the wafer are patterned to form Figure 2 The ultrasonic transducing units with the quadrilateral-like shape with four inwardly recessed corners of the quadrilateral are densely arranged according to the arrangement mode shown in the first aspect of the present application, the area of the vibration region 100 of the ultrasonic transmitting device is fully utilized, the effective vibration area of the ultrasonic transducing units is increased, and thus the output capacity of the ultrasonic transmitting device under the same unit area can be effectively improved. Figure 2 The ultrasonic transmitting device preparation method provided in the embodiments of the present application forms the ultrasonic transducing units with the quadrilateral-like shape with four inwardly recessed corners of the quadrilateral by patterning the bottom electrode layer exposed by the patterned piezoelectric material layer.

[0093] The ultrasonic transmitting device preparation method provided in the embodiments of the present application forms the ultrasonic transducing units with the quadrilateral-like shape with four inwardly recessed corners of the quadrilateral by patterning the bottom electrode layer exposed by the patterned piezoelectric material layer.

[0094] The above specific embodiments do not constitute a limitation on the protection scope of the present application. Those skilled in the art should understand that various modifications, combinations, sub-combinations and substitutions can be made according to design requirements and other factors. Any modification, equivalent replacement and improvement made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. An ultrasonic transmitting device, characterized in that, The application relates to an ultrasonic transducer device. The device comprises a vibration area and a frame area, the frame area being arranged around the vibration area; the vibration area comprises a plurality of device rows; Each of the device rows is arranged with a plurality of ultrasonic transducer units in a first direction, and a support column is arranged between adjacent ultrasonic transducer units; each of the device rows is arranged in a second direction, and the ultrasonic transducer units in adjacent device rows are staggered in the second direction; wherein the first direction is perpendicular to the second direction; Each of the ultrasonic transducer units comprises a substrate, a bottom electrode layer, a piezoelectric material layer and a top electrode layer which are arranged in layers; The bottom electrode layer has a first orthographic projection on the substrate, and the top electrode layer has a second orthographic projection on the substrate; the area of the first orthographic projection is greater than the area of the second orthographic projection, and the first orthographic projection completely covers the second orthographic projection; The second orthographic projection is in the shape of a rectangle, and the first orthographic projection extends beyond the second orthographic projection at the position of at least one pair of opposite sides in the second orthographic projection.

2. The ultrasonic transmitting device according to claim 1, characterized in that, In the first direction, the bottom electrode layer of each of the ultrasonic transducer units comprises a main body part and first extension parts located on both sides of the main body part; The orthographic projection of the first extension part on the substrate is located on both sides of the second orthographic projection in the first direction; the length of the first extension part is equal to the width of the top electrode layer, and the width of the first extension part is less than half the length of the top electrode layer; The ultrasonic transducer units in adjacent device rows are closely arranged.

3. The ultrasonic transmitting device according to claim 1, wherein In the second direction, the bottom electrode layer of each of the ultrasonic transducer units comprises a main body part and second extension parts located on both sides of the main body part; The orthographic projection of the second extension part on the substrate is located on both sides of the second orthographic projection in the second direction; the length of the second extension part is equal to the length of the top electrode layer, and the width of the second extension part is less than half the width of the top electrode layer; The ultrasonic transducer units in adjacent device rows are closely arranged.

4. The ultrasonic transmitting device according to claim 1, wherein The bottom electrode layer of each of the ultrasonic transducer units comprises a main body part, first extension parts located on both sides of the main body part in the first direction and second extension parts located on both sides of the main body part in the second direction; The first extension parts and the second extension parts form corner parts at positions corresponding to the corners of the top electrode layer; The corner parts are in the shape of a right angle, and two corner parts corresponding to adjacent ultrasonic transducer units are arranged in a fitting mode in the diagonal direction of the top electrode layer.

5. The ultrasonic transmitting device of claim 1, wherein, The top electrode layers in the ultrasonic transducer units in the same device row are connected in series; The top electrode layers connected in series in the ultrasonic transducer units of every at least two device rows are connected in parallel.

6. The ultrasonic transmitting device according to claim 5, wherein The plurality of device rows comprises a first device row group and a second device row group; The first device row group and the second device row group each comprise at least one device row; in the second direction, the first device row group is located on both sides of the second device row group; The top electrode layers of the series connection of each of the device rows in the first device row group are connected in parallel to a first electrode, and the top electrode layers of the series connection of each of the device rows in the second device row group are connected in parallel to a second electrode. 7.The ultrasonic wave transmitting device according to claim 6, wherein, The first device row group and the second device row group are arranged in axial symmetry about a central axis of the ultrasonic wave transmitting device in the second direction.

8. The ultrasonic transmitting device according to claim 7, characterized in that, Further comprising: two ground electrodes; The first electrode and the second electrode are respectively located at opposite edge positions of the frame region, and the two ground electrodes are respectively located at top corner positions of the frame region in a diagonal direction; The two ground electrodes are respectively used for grounding each of the device rows in the first device row group electrically connected to the first electrode, and grounding each of the device rows in the second device row group electrically connected to the second electrode.

9. The ultrasonic transmitting device of claim 1, wherein, The support column comprises a substrate and an insulating layer arranged in a stack; A cavity is arranged between two adjacent support columns, and the cavity is located on a side of the base of each ultrasonic wave transducing unit away from the bottom electrode layer.

10. An ultrasonic transmitting device, characterized by An ultrasonic wave transmitting device as claimed in any one of claims 1 to 9.

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