Substrate foreign matter cleaning device
By using the cleaning mechanism and dust collection mechanism of the substrate foreign object cleaning device, the problem of foreign objects on the substrate surface affecting product quality is solved, and the substrate surface is cleaned and production is efficient.
Patent Information
- Application Number
- CN202520067842.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-01-13
- Publication Date
- 2025-12-16
- Estimated Expiration
- 2035-01-13
AI Technical Summary
During the substrate production process, it is difficult to avoid foreign matter adhering to the substrate surface, which can lead to uneven flux application and dents after bonding, affecting product quality.
A substrate foreign object cleaning device was designed, including a cleaning mechanism and a dust collection mechanism. Foreign objects on the substrate surface are blown away by an ion gun and collected by the dust collection mechanism. Combined with infrared detection and ion gun reset control, the cleaning effect is ensured.
It effectively removes foreign matter from the substrate surface, avoids uneven flux application and post-bonding indentations, improves substrate production quality, and prevents secondary contamination.
Smart Images
Figure CN223670365U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The utility model relates to a kind of semiconductor production systems, especially a kind of substrate foreign matter cleaning device. BACKGROUND
[0002] The description in this section is provided only for purposes of summarizing aspects of the present disclosure and does not constitute an admission of prior art.
[0003] In the production process of substrate, the substrate needs to be placed on the workbench temporarily, and then the substrate is flipped by the pick-and-place machine, and then the substrate is placed in the flux tray to coat the flux, and then the substrate is connected with other substrates or components under the action of the bonding head. It is worth noting that in the above process, the surface of the substrate may be contaminated with foreign matter, especially foreign matter with a certain volume. The uneven application of flux is caused during the operation of coating the flux on the substrate, and the indentation caused by foreign matter is found on the surface of the substrate after the bonding head is pressed, which affects the product quality.
[0004] It should be noted that the above introduction to the technical background is only to facilitate a clear and complete description of the technical solutions of the present utility model, and to facilitate the understanding of those skilled in the art. The above technical solutions cannot be considered as known to those skilled in the art just because they are described in the background section of the present utility model. CONTENT OF THE UTILITY MODEL
[0005] The utility model aims to provide a substrate foreign matter cleaning device, which can remove foreign matter on the surface of the substrate before picking up the substrate by means of the cleaning mechanism, and store the removed foreign matter by the dust collecting mechanism, thereby avoiding the subsequent impact on the quality of the substrate caused by foreign matter.
[0006] In order to achieve the above-mentioned purpose, the utility model discloses a kind of substrate foreign matter cleaning devices for cleaning the foreign matter on the surface of substrate;The substrate foreign matter cleaning device includes:
[0007] The cleaning mechanism includes a gas source, an ion neutralizer and an ion gun. The downstream of the gas source is connected to the ion neutralizer and is used to provide a gas flow to the ion neutralizer. The downstream of the ion neutralizer is connected to the ion gun and is used to provide a gas flow carrying ions to the ion gun. The output end of the ion gun is arranged towards the surface of the substrate and is used to blow out the gas flow carrying ions towards the surface of the substrate.
[0008] The dust collecting mechanism is arranged adjacent to the substrate, and the receiving end of the dust collecting mechanism is arranged opposite to the output end of the ion gun, so that the foreign matter blown away by the cleaning mechanism is received by the dust collecting mechanism.
[0009] As a further description of the above technical solution, the substrate foreign matter cleaning device further comprises an infrared mechanism, an output end of the infrared mechanism is arranged towards the surface of the substrate, and the infrared mechanism is used for emitting detection light towards the surface of the substrate.
[0010] As a further description of the above technical solution, an infrared switch is further connected upstream of the infrared mechanism, and the infrared switch is used for controlling start and stop of the infrared mechanism.
[0011] As a further description of the above technical solution, the cleaning mechanism further comprises an ion gun reset device, the ion gun reset device is connected upstream of the ion gun and is used for controlling start and stop of the ion gun, and the ion gun reset device is in signal connection with the infrared switch.
[0012] As a further description of the above technical solution, an output end of the ion gun is arranged as a conical port gradually converging outward, and a receiving end of the dust collecting mechanism is arranged as a horn port gradually expanding outward.
[0013] As a further description of the above technical solution, blowing time of the ion gun towards the surface of the substrate is 2-8s.
[0014] As a further description of the above technical solution, blowing air flow of the ion gun towards the surface of the substrate is 60-80L / min.
[0015] As a further description of the above technical solution, the cleaning mechanism further comprises an adjusting valve and a flow meter, an upstream of the adjusting valve is connected with the gas source and is used for adjusting flow and pressure of the gas flow provided by the gas source, an upstream of the flow meter is connected with the adjusting valve and is used for verifying and displaying adjusting values of the adjusting valve, and a downstream of the adjusting valve is connected with the ion neutralizer.
[0016] Through the above technical solution, the substrate foreign matter cleaning device has the following beneficial effects:
[0017] The substrate foreign matter cleaning device can remove foreign matters on the surface of the substrate by the cleaning mechanism before picking up the substrate, so that the surface of the substrate is in a clean state in an initial state before applying the flux, the phenomenon of unbalanced application of the flux caused by foreign matter contamination is avoided, and the appearance of surface dents of the substrate caused by pressing is also avoided. After the foreign matters are blown off by the ion-carrying air flow, the removed foreign matters are stored by the dust collecting mechanism, secondary pollution caused by blowing and contamination of the foreign matters in the production area is avoided, and the production quality of the substrate is indirectly improved.
[0018] For further understanding the features and technical contents of the present application, please refer to the following detailed description and drawings of the present application, however, the drawings provided are only for providing reference and illustration, and not used to limit the present application. BRIEF DESCRIPTION OF DRAWINGS
[0019] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the following will briefly introduce the drawings needed to be used in the embodiments or prior art description. Obviously, the drawings in the following description are only some embodiments of the present application, and for those skilled in the art, other drawings can also be obtained without creative labor.
[0020] Figure 1 is a connection relationship schematic diagram of a substrate foreign matter cleaning device provided by the present application;
[0021] Figure 2 is a cleaning process schematic diagram of a substrate foreign matter cleaning device provided by the present application;
[0022] In the figure: 100, substrate; 1, cleaning mechanism; 11, gas source; 12, ion neutralizer; 13, ion gun; 14, regulating valve; 15, flow meter; 16, ion gun reset device; 2, dust collecting mechanism; 3, infrared mechanism; 31, infrared switch; 4, power supply. DETAILED DESCRIPTION
[0023] In order to make the person skilled in the art better understand the technical solutions in the present application, the following will combine the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only some of the embodiments of the present application, not all. Based on the embodiments in the present application, all other embodiments obtained by the person skilled in the art without creative labor should belong to the protection scope of the present application.
[0024] The following is to illustrate the embodiments of the present application through specific specific embodiments, and the person skilled in the art can understand the advantages and effects of the present application from the disclosed content in the present application. The present application can be implemented or applied through other different specific embodiments, and each detail in the present application can be modified and changed based on different viewpoints and applications without departing from the concept of the present application. In addition, the drawings of the present application are only simple schematic illustrations, not the depiction of actual size, and the prior declaration. The following embodiments will further illustrate the related technical contents of the present application, but the disclosed content is not used to limit the protection scope of the present application.
[0025] It should be understood that although the terms "first", "second", "third", etc. may be used herein to describe various components or signals, these components or signals should not be limited by these terms. These terms are mainly used to distinguish one component from another component, or one signal from another signal. In addition, the term "or" used herein may include any combination of one or more associated listed items as appropriate.
[0026] See Figures 1-2 A substrate foreign matter cleaning device is used for cleaning foreign matter on the surface of a substrate 100. The substrate foreign matter cleaning device comprises:
[0027] A cleaning mechanism 1, the cleaning mechanism 1 comprises a gas source 11, an ion neutralizer 12, and an ion gun 13. The gas source 11 is connected to the ion neutralizer 12 downstream and is used to provide a gas flow to the ion neutralizer 12. The ion neutralizer 12 is connected to the ion gun 13 downstream and is used to provide a gas flow carrying ions to the ion gun 13. The output end of the ion gun 13 is arranged towards the surface of the substrate 100 and is used to blow the gas flow carrying ions towards the surface of the substrate 100.
[0028] A dust collecting mechanism 2, the dust collecting mechanism 2 is arranged adjacent to the substrate 100, and the receiving end of the dust collecting mechanism 2 is arranged opposite to the output end of the ion gun 13, so that the foreign matter blown away by the cleaning mechanism 1 is received by the dust collecting mechanism 2.
[0029] Through the above structure, in use, the operator only needs to place the substrate 100 in the preset area, and the substrate 100 may carry some foreign matter. The ion gun 13 in the cleaning mechanism 1 is arranged towards the outer surface of the substrate 100. The gas source 11 of the cleaning mechanism 1 is started and runs to supply gas. The ion neutralizer 12 is started and runs to generate ions that are easy to act on foreign matter. The gas flow generated by the gas source 11 carries ions after flowing through the ion neutralizer 12, and is finally converged at the output end of the ion gun 13 and blown to the surface of the substrate 100. The foreign matter on the surface of the substrate 100 is driven by the ion gas flow to separate from the surface of the substrate 100 and is blown to the dust collecting mechanism 2 on one side of the substrate 100 and is collected by the dust collecting mechanism 2.
[0030] In the above use process, since the foreign matter on the surface of the substrate 100 is blown away by the ion gas flow carrying ions blown by the ion gun 13 in the cleaning mechanism 1, the non-uniformity of the flux coverage caused by the foreign matter on the surface of the substrate 100 in the process of adhering the flux to the substrate 100, and the formation of indentations on the surface of the substrate 100 after the bonding head is pressed are avoided, which affects the quality of the substrate 100. At the same time, the foreign matter blown away in the above process is all collected by the dust collecting mechanism 2 on one side of the substrate 100, avoiding the occurrence of the secondary pollution caused by the foreign matter blown in the production area.
[0031] Further, the substrate foreign matter cleaning device further comprises an infrared mechanism 3, an output end of the infrared mechanism 3 is arranged towards the surface of the substrate 100, and the infrared mechanism 3 is used for emitting detection light towards the surface of the substrate 100. Specifically, the upstream of the infrared mechanism 3 is further connected with an infrared switch 31, and the infrared switch 31 is used for controlling the start and stop of the infrared mechanism 3. The output end of the infrared mechanism 3 emits infrared light towards the upper surface of the substrate 100, which is used for detecting whether the foreign matter on the surface of the substrate 100 is cleaned completely. Specifically, the infrared light can cover the whole area of the surface of the substrate 100, and the ion gun 13 can also cover the whole area of the surface of the substrate 100 by blowing the ion-carrying airflow, so as to avoid the omission of residual foreign matter.
[0032] Further, the cleaning mechanism 1 further comprises an ion gun reset device 16, the ion gun reset device 16 is connected to the upstream of the ion gun 13 and is used for controlling the start and stop of the ion gun 13, and the ion gun reset device 16 is in signal connection with the infrared switch 31. Specifically, in the embodiment, the ion gun reset device 16 and the infrared switch 31 are started and stopped together, so that the ion gun 13 blows the surface of the substrate 100, and the surface of the substrate 100 is always irradiated by the infrared light, and the energy consumption of the system operation is effectively controlled. The ion gun reset device 16 can also reset the ion gun 13 by restarting the ion gun 13, test ventilation or high-pressure ventilation, etc., which is used for maintaining the normal operation of the ion gun 13.
[0033] Further, please refer to Figure 2 , the output end of the ion gun 13 is arranged as a conical port which gradually converges outward, and the receiving end of the dust collecting mechanism 2 is arranged as a horn port which gradually expands outward. Specifically, by arranging the conical port, the airflow speed output by the ion gun 13 is greater under the condition of the same airflow intensity, and has a certain flow convergence effect, so that the foreign matter on the surface of the substrate 100 is more easily blown away. By arranging the horn port, the dust collecting mechanism 2 can more easily receive the blown-off foreign matter, and space is saved.
[0034] Further, the blowing time of the ion gun 13 towards the surface of the substrate 100 is 2-8s, and the blowing airflow of the ion gun 13 towards the surface of the substrate 100 is 60-80L / min. Under the above conditions, the dust, debris and other foreign matters on the surface of the substrate 100 can be cleaned effectively, the cleaning timeliness is ensured, and the airflow energy cost is low.
[0035] Further, the cleaning mechanism 1 further comprises a regulating valve 14 and a flow meter 15, the regulating valve 14 is connected with the air source 11 at the upstream and is used for regulating the flow and pressure of the air flow provided by the air source 11, the flow meter 15 is connected with the regulating valve 14 at the upstream and is used for verifying and displaying the regulating value of the regulating valve 14, the regulating valve 14 is connected with the ion neutralizer 12 at the downstream. The regulating valve 14 adjusts the flow of the passing air by changing the opening of the valve, so that the air pressure of the air flow is kept stable, and the operator can judge whether the air pressure appears excessive fluctuation in real time by directly observing the flow meter 15, and adjust in time, so as to avoid the damage of the system.
[0036] It is worth noting that in the embodiment, the cleaning mechanism 1, the infrared mechanism 3 and the like are uniformly powered by the most upstream power supply 4, and are regulated by means of the ion gun resetter 16 and the infrared switch 31, so as to form a complete system.
[0037] The above disclosed content is only the preferred feasible embodiment of the utility model, and does not limit the patent application range of the utility model, so that all equivalent technical changes made by applying the utility model specification and drawing contents are contained in the patent application range of the utility model.
[0038] The various embodiments in the specification are described in a progressive manner, and the same or similar parts between the various embodiments can be mutually referred to, and each embodiment mainly describes the difference from other embodiments.
[0039] Although the present application is described by embodiments, those skilled in the art know that there are many modifications and changes of the present application without departing from the spirit of the present application, and it is hoped that the attached embodiments include these modifications and changes without departing from the present application.
Claims
1. A substrate foreign matter cleaning device for cleaning foreign matter from the surface of a substrate; characterized in that, The substrate foreign matter cleaning device comprises: a cleaning mechanism, which comprises a gas source, an ion neutralizer and an ion gun, the gas source is connected to the ion neutralizer downstream and used to provide a gas flow to the ion neutralizer, the ion neutralizer is connected to the ion gun downstream and used to provide a gas flow carrying ions to the ion gun, and the output end of the ion gun is arranged towards the surface of the substrate and used to blow the gas flow carrying ions towards the surface of the substrate; a dust collection mechanism, which is arranged adjacent to the substrate, and the receiving end of the dust collection mechanism is arranged opposite to the output end of the ion gun, so that the foreign matter blown away by the cleaning mechanism is received by the dust collection mechanism.
2. The substrate foreign material cleaning apparatus according to claim 1, characterized by: The substrate foreign matter cleaning device further comprises an infrared mechanism, and the output end of the infrared mechanism is arranged towards the surface of the substrate, and the infrared mechanism is used to emit detection light towards the surface of the substrate.
3. The substrate foreign material cleaning apparatus according to claim 2, characterized by: An infrared switch is further connected upstream of the infrared mechanism, and the infrared switch is used to control the start and stop of the infrared mechanism.
4. The apparatus according to claim 3, wherein: The cleaning mechanism further comprises an ion gun reset device, which is connected upstream of the ion gun and used to control the start and stop of the ion gun, and the ion gun reset device is signal connected between the infrared switch.
5. The apparatus according to claim 4, wherein: The output end of the ion gun is arranged as a conical port gradually converging outward, and the receiving end of the dust collection mechanism is arranged as a horn port gradually expanding outward.
6. The substrate foreign material cleaning apparatus according to claim 1, characterized by: The blowing time of the ion gun towards the surface of the substrate is 2-8s.
7. The apparatus according to claim 2, wherein: The blowing gas flow of the ion gun towards the surface of the substrate is 60-80L / min.
8. The substrate foreign material cleaning apparatus of claim 1, wherein: The cleaning mechanism further comprises an adjusting valve and a flow meter, the adjusting valve is connected upstream of the gas source and used to adjust the flow and pressure of the gas flow provided by the gas source, the flow meter is connected upstream of the adjusting valve and used to verify and display the adjusting value of the adjusting valve, and the adjusting valve is connected downstream of the ion neutralizer.