Atomic layer deposition pipeline structure and system

Abstract

The utility model provides an atomic layer deposition pipeline structure and system. The atomic layer deposition pipeline structure comprises a dilution pipeline, a residual pressure release pipeline and a pressure gauge, the diluting pipeline can be used for bubbling the introduced auxiliary gas and diluting the auxiliary gas with source bubbles; the residual pressure release pipeline comprises a control gas circuit and a pressure release valve; the mixed gas path is communicated with the inlet end of the control gas path; the pressure relief valve is arranged in the control gas circuit and blocks the control gas circuit; the pressure gauge is arranged in the dilution pipeline and is used for monitoring air pressure in the dilution pipeline; the pressure relief valve is opened and closed according to monitoring readings of the pressure meter; when the pressure gauge monitors that the air pressure of the dilution pipeline is increased to a preset value, the pressure relief valve is opened to enable the inlet end and the outlet end of the control air path to be communicated, and the air pressure of the dilution pipeline is reduced. According to the atomic layer deposition pipeline structure and the atomic layer deposition system, local pressure in the pipeline can be released, so that the adjusting effect of the dilution pipeline is ensured, and the deviation between the actual proportion of source bubbles and a preset value is reduced.

Description

TECHNICAL FIELD

[0001] The utility model relates to the technical field of semiconductor manufacturing, specifically relates to a kind of to reduce atomic layer deposition pipeline system. BACKGROUND

[0002] In the related art, atomic layer deposition is widely used for thin film preparation of various electronic components. In the atomic layer deposition process, a gas path is usually designed to allow auxiliary gas to enter different gas sources through the gas path to generate bubbles with different sources, and then through subsequent gas paths to release bubbles with different sources in the reaction chamber at the same time, so that bubbles with different sources react on the surface of the substrate to be plated, completing the plating process.

[0003] In the above process, in order to change the plating effect, a dilution pipeline is designed in the gas path pipeline to adjust the proportion of bubbles carrying different sources; However, there may be a situation of excessive local pressure in the pipeline, which will affect the adjustment effect of the dilution pipeline on the proportion of bubbles carrying sources, making the actual proportion of bubbles carrying sources deviate from the expected value. SUMMARY

[0004] The utility model aims at at least one of the technical problems existing in the prior art. To this end, the utility model provides an atomic layer deposition pipeline structure, which can release the local pressure inside the pipeline, thereby ensuring the adjustment effect of the dilution pipeline and reducing the deviation of the actual proportion of bubbles carrying sources from the preset value.

[0005] The utility model also provides an atomic layer deposition pipeline system with the above-mentioned atomic layer deposition pipeline structure.

[0006] According to the atomic layer deposition pipeline structure of the first aspect embodiment of the utility model, comprising:

[0007] The dilution pipeline includes a source inlet mass flow controller, a dilution mass flow controller, a source bottle, a source inlet gas path, a source outlet gas path, a dilution gas path and a mixing gas path. The source inlet mass flow controller is connected to the inlet end of the source inlet gas path and can adjust the flow of auxiliary gas entering the inlet end of the source inlet gas path. The outlet end of the source inlet gas path is connected to the inlet end of the source bottle. The outlet end of the source bottle is connected to the inlet end of the source outlet gas path. The outlet end of the source outlet gas path is connected to the inlet end of the mixing gas path. The dilution mass flow controller is connected to the inlet end of the dilution gas path and can adjust the flow of auxiliary gas entering the inlet end of the dilution gas path. The outlet end of the dilution gas path is connected to the inlet end of the mixing gas path.

[0008] The residual pressure release pipeline comprises a control gas path and a pressure relief valve; the mixed gas path is communicated with an inlet end of the control gas path; the pressure relief valve is arranged in the control gas path and blocks the inlet end and an outlet end of the control gas path;

[0009] A pressure gauge is arranged in the dilution pipeline and used for monitoring the gas pressure in the dilution pipeline; the pressure relief valve is opened and closed according to the monitoring value of the pressure gauge; when the pressure gauge monitors that the gas pressure in the dilution pipeline increases to a preset value, the pressure relief valve is opened to communicate the inlet end and the outlet end of the control gas path, and the gas pressure in the dilution pipeline is reduced.

[0010] The source inlet mass flow controller can adjust the flow of the auxiliary gas into the source inlet gas path, the auxiliary gas in the source inlet gas path can bubble into the source bottle, the generated source bubble can enter the mixed gas path with the auxiliary gas through the source outlet gas path; the dilution mass flow controller can adjust the flow of the auxiliary gas into the dilution gas path, so as to adjust the flow of the pure auxiliary gas without the source bubble from the dilution gas path into the mixed gas path. The source inlet mass flow controller and the dilution mass flow controller in the above pipeline structure can adjust the mixing ratio between the auxiliary gas containing the source bubble and the pure auxiliary gas, when the gas pressure in the dilution pipeline is too large, the pressure relief valve arranged in the residual pressure release pipeline is opened according to the monitoring value of the pressure gauge, so that the inlet end and the outlet end of the control gas path are communicated; part of the mixed gas in the mixed gas path can flow to other positions through the control gas path, thereby reducing the influence of the too large gas pressure in the dilution pipeline: first, reducing the influence of the too large pressure of the dilution pipeline on the flow of the auxiliary gas into the gas path by the mass flow controller, improving the stability of the flow provided by the mass flow controller; second, reducing the too large pressure of the auxiliary gas into the source bottle caused by the too large pressure of the dilution pipeline, thereby reducing the influence of the too large pressure of the auxiliary gas into the source bottle on the bubbling effect, improving the process stability of the auxiliary gas bubbling.

[0011] According to some embodiments of the present application, the pressure gauge is arranged in the mixed gas path and used for monitoring the gas pressure in the mixed gas path.

[0012] According to some embodiments of the present application, the pressure gauge is arranged in the source inlet gas path and used for monitoring the gas pressure in the source inlet gas path.

[0013] According to some embodiments of the present application, the dilution pipeline further comprises a secondary mass flow controller, a secondary dilution gas path and a secondary mixing gas path, the secondary mass flow controller is connected to the inlet end of the secondary dilution gas path and can adjust the flow of auxiliary gas entering the inlet end of the secondary dilution gas path; the outlet end of the mixing gas path is connected to the inlet end of the secondary mixing gas path, and the outlet end of the secondary dilution gas path is connected to the secondary mixing gas path.

[0014] According to some embodiments of the present application, the pressure gauge is arranged in the secondary mixing gas path and is used for monitoring the gas pressure of the secondary mixing gas path.

[0015] According to some embodiments of the present application, the dilution pipeline further comprises an inlet source one-way valve arranged in the inlet source gas path and used for limiting the backflow of auxiliary gas from the outlet end to the inlet end of the inlet source gas path; and / or, the dilution pipeline further comprises an outlet gas one-way valve arranged in the outlet source gas path and used for limiting the backflow of auxiliary gas from the outlet end to the inlet end of the outlet source gas path.

[0016] According to some embodiments of the present application, a mixing mass flow controller is further included, the mixing mass flow controller is arranged in the mixing gas path and divides the mixing gas path into a first mixing section and a second mixing section, the mixing mass flow controller can receive the gas of the first mixing section and adjust the flow of gas entering the second mixing section; the first mixing section is connected to the inlet end of the control gas path; the pressure gauge is arranged in the first mixing section and is used for monitoring the gas pressure of the first mixing section.

[0017] According to some embodiments of the present application, an auxiliary mass flow controller and an auxiliary gas pipeline are further included, the auxiliary mass flow controller is connected to the inlet end of the auxiliary gas pipeline and can adjust the flow of auxiliary gas entering the inlet end of the auxiliary gas pipeline, and the outlet end of the auxiliary gas pipeline is used for entering gas into the reaction cavity.

[0018] The atomic layer deposition pipeline system according to the second aspect of the present application has a reaction cavity used for generating an atomic layer deposition reaction, and is characterized in that the atomic layer deposition pipeline system comprises:

[0019] Two atomic layer deposition pipeline structures according to any one of the above embodiments, the source bottle of one of the atomic layer deposition pipeline structures is used for arranging an oxygen source, and the source bottle of the other of the atomic layer deposition pipeline structures is used for arranging a metal source; the outlet end of the mixing gas path of each of the atomic layer deposition pipeline structures is connected to the reaction cavity.

[0020] According to the atomic layer deposition pipeline system, the following beneficial effects are achieved: each atomic layer deposition pipeline structure can control the mixing ratio between the adjusted auxiliary gas with source bubbles and the pure auxiliary gas through the mass flow controller, the oxygen source and the metal source are arranged in the source bottles of the two atomic layer deposition pipeline structures in any one of the above embodiments respectively, the atomic layer deposition pipeline system can pass the mixed gas with different sources and different concentrations into the reaction cavity, and atomic layer deposition reactions under different conditions are realized.

[0021] According to some embodiments of the present application, a pressure reducing valve is further included, an inlet end of the pressure reducing valve is used for passing auxiliary gas, and an outlet end of the pressure reducing valve is communicated with an inlet end of each source mass flow controller and an inlet end of each dilution mass flow controller.

[0022] Additional aspects and advantages of the present application will be given in part in the following description, and will become apparent from the description, or will be learned by practice of the present application. BRIEF DESCRIPTION OF DRAWINGS

[0023] The present application will be further described below in combination with the drawings and embodiments, in which:

[0024] Figure 1 A pipeline schematic diagram of the atomic layer deposition pipeline structure of the first aspect embodiment of the present application is shown in the figure;

[0025] Figure 2 A pipeline schematic diagram of the atomic layer deposition pipeline structure of the second aspect embodiment of the present application is shown in the figure;

[0026] Figure 3 A pipeline schematic diagram of the atomic layer deposition pipeline structure of the third aspect embodiment of the present application is shown in the figure;

[0027] Figure 4 A pipeline schematic diagram of the atomic layer deposition pipeline structure of the fourth aspect embodiment of the present application is shown in the figure;

[0028] Figure 5 A pipeline schematic diagram of the atomic layer deposition pipeline structure of the fifth aspect embodiment of the present application is shown in the figure;

[0029] Figure 6 A pipeline schematic diagram of the atomic layer deposition pipeline structure of the sixth aspect embodiment of the present application is shown in the figure;

[0030] Figure 7The utility model discloses a seventh aspect embodiment pipeline schematic drawing of atomic layer deposition pipeline system.

[0031] Figure 8 The utility model discloses an eighth aspect embodiment pipeline schematic drawing of atomic layer deposition pipeline system.

[0032] Figure 9 The utility model discloses a ninth aspect embodiment pipeline schematic drawing of atomic layer deposition pipeline system.

[0033] Reference signs:

[0034] Reaction cavity 10;

[0035] Dilution pipeline 100, inlet source mass flow controller 110A, dilution mass flow controller 110B, source bottle 120, inlet source gas path 130, outlet source gas path 140, dilution gas path 150A, mixed gas path 160A, first mixed section 161A, second mixed section 162A, secondary mass flow controller 110C, secondary dilution gas path 150B, secondary mixed gas path 160B, inlet source one-way valve 170A, outlet gas one-way valve 170B;

[0036] Residual pressure release pipeline 200, control gas path 210, pressure relief valve 220;

[0037] Pressure gauge 300;

[0038] Mixed mass flow controller 400;

[0039] Auxiliary mass flow controller 500, auxiliary gas pipeline 600;

[0040] Pressure reducing valve 700. DETAILED DESCRIPTION

[0041] The embodiments of the utility model will be described in detail below, and the examples of the embodiments are shown in the drawings, wherein the same or similar signs represent the same or similar elements or elements with the same or similar functions throughout. The embodiments described below by referring to the drawings are exemplary, only for explaining the utility model, and cannot be understood as the limitation of the utility model.

[0042] In the description of the utility model, it is understood that the orientation description, such as up, down, front, back, left, right and the like, is based on the orientation or position relationship shown in the drawings, only for the convenience of describing the utility model and simplifying the description, and is not indicative or implied that the indicated device or element must have a particular orientation, a particular orientation and operation, therefore, it cannot be understood as the limitation of the utility model.

[0043] In the description of the utility model, if several meanings are more than one, the meaning of multiple is more than two, greater than, less than, more than, etc. Understand as not including the number, above, below, within, etc. Understand as including the number. If it is described to the first, the second is only used for distinguishing the purpose of technical features, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features or implicitly indicating the sequence of indicated technical features.

[0044] In the description of the utility model, unless otherwise explicitly limited, the words such as setting, installation, connection should be understood broadly, and the person skilled in the art can determine the specific meaning of the above words in the utility model in combination with the specific content of the technical scheme.

[0045] In the description of the utility model, the description of reference terms "one embodiment", "some embodiments", "illustrative embodiment", "example", "specific example" or "some examples" means that the specific features, structures, materials or characteristics described in combination with the embodiment or example are contained in at least one embodiment or example of the utility model. In the specification, the illustrative description of the above terms does not necessarily refer to the same embodiment or example. Moreover, the described specific features, structures, materials or characteristics can be combined in any one or more embodiments or examples in a suitable manner. Please refer to Figure 1 As shown in the description of the utility model, the utility model provides a kind of atomic layer deposition pipeline structure, including dilution pipeline 100, residual pressure release pipeline 200 and pressure gauge 300.

[0046] Dilution pipeline 100 includes inlet source mass flow controller 110A, dilution mass flow controller 110B, source bottle 120, inlet source gas path 130, outlet source gas path 140, dilution gas path 150A and mixed gas path 160A;Inlet source mass flow controller 110A is communicated at the inlet end of inlet source gas path 130, and can adjust the flow of auxiliary gas into the inlet end of inlet source gas path 130, and the outlet end of inlet source gas path 130 is communicated at the inlet end of source bottle 120;The outlet end of source bottle 120 is communicated at the inlet end of outlet source gas path 140, and the outlet end of outlet source gas path 140 is communicated at the inlet end of mixed gas path 160A;Dilution mass flow controller 110B is communicated at the inlet end of dilution gas path 150A, and can adjust the flow of auxiliary gas into the inlet end of dilution gas path 150A, and the outlet end of dilution gas path 150A is communicated at the inlet end of mixed gas path 160A.

[0047] The inlet mass flow controller 110A can adjust the flow of auxiliary gas into the inlet gas path 130, the auxiliary gas in the inlet gas path 130 can enter the source bottle 120 to generate bubbles, and the generated bubbles with source gas can enter the mixed gas path 160A with the auxiliary gas through the outlet gas path 140; the dilution mass flow controller 110B can adjust the flow of auxiliary gas into the dilution gas path 150A, so as to adjust the flow of pure auxiliary gas without bubbles with source gas from the dilution gas path 150A into the mixed gas path 160A, and the flow of pure auxiliary gas into the mixed gas path 160A can increase the flow of auxiliary gas in the mixed gas path 160A, which can reduce the proportion of the flow of bubbles with source gas in the total flow of mixed gas, so as to dilute the bubbles with source gas. The auxiliary gas of the utility model can be an inert gas commonly used in the chemical industry, such as nitrogen, so that the auxiliary gas will not react when it is bubbled and mixed with other auxiliary gas with bubbles containing source gas.

[0048] The staff can adjust the specific flow setting of the inlet mass flow controller 110A and the specific flow setting of the dilution mass flow controller 110B respectively, change the proportion of the gas flow from different gas paths in the mixed gas path 160A, and thus adjust the dilution effect of the bubbles with source gas.

[0049] The residual pressure release pipeline 200 comprises a control gas path 210 and a pressure relief valve 220; the mixed gas path 160A is connected to the inlet end of the control gas path 210; the pressure relief valve 220 is arranged in the control gas path 210 and blocks the inlet end and the outlet end of the control gas path 210. When the pressure relief valve 220 is closed, the gas in the mixed gas path 160A cannot flow from the inlet end of the control gas path 210 to the outlet end of the control gas path 210.

[0050] The pressure gauge 300 is arranged in the dilution pipeline 100 and is used for monitoring the gas pressure in the dilution pipeline 100; the pressure relief valve 220 is opened and closed according to the monitoring value of the pressure gauge 300; when the gas pressure in the dilution pipeline 100 monitored by the pressure gauge 300 increases to a preset value, the pressure relief valve 220 is opened to connect the inlet end and the outlet end of the control gas path 210, and the gas pressure in the dilution pipeline 100 is reduced.

[0051] When the gas pressure in the dilution pipeline 100 is too large, the pressure relief valve 220 arranged in the residual pressure release pipeline 200 is opened according to the monitoring value of the pressure gauge 300, so that the inlet end and the outlet end of the control gas path 210 are connected; part of the mixed gas in the mixed gas path 160A can flow to other positions through the control gas path 210, so as to reduce the influence of the excessive gas pressure in the dilution pipeline 100; the influence of the excessive gas pressure in the dilution pipeline 100 is reduced in the following aspects:

[0052] On one hand, for the mass flow controller, excessive pressure in the dilution pipeline can affect the effect of the mass flow controller outputting rated gas flow, so that the actual gas flow output by the mass flow controller fluctuates, and then the proportion of the mixed auxiliary gas and the source gas bubbles changes, and the actual proportion of the source gas bubbles deviates from the expected proportion. Therefore, the influence of excessive pressure in the dilution pipeline on the auxiliary gas flow introduced into the gas path by the mass flow controller is reduced, and the stability of the flow provided by the mass flow controller is improved.

[0053] On the other hand, when the auxiliary gas enters the source bottle 120, the pressure of the auxiliary gas itself can affect the bubbling effect, thereby ultimately affecting the flow of the source gas bubbles flowing into the source gas path 140, and then affecting the deviation of the actual proportion of the source gas bubbles from the expected proportion. Therefore, the excessive pressure of the auxiliary gas entering the source bottle 120 due to the excessive pressure in the dilution pipeline is reduced, thereby reducing the influence of the excessive pressure of the auxiliary gas entering the source bottle 120 on the bubbling effect, and improving the process stability of the auxiliary gas bubbling.

[0054] The utility model discloses can pass through the situation of the gas pressure of dilution pipeline 100 is too big to the pressure gauge 300 to dilution pipeline 100 and adjust, thereby can simultaneously improve the problem of above-mentioned multiple aspects.

[0055] Without departing from the inventive concept of the utility model, those skilled in the art can adjust the position of the pressure gauge 300 according to the actual situation.

[0056] Please refer to Figure 2 Further, in some embodiments, the pressure gauge 300 is arranged in the source gas path 130 and is used to monitor the gas pressure in the source gas path 130. Compared with other positions, since the auxiliary gas enters the source bottle 120 through the source gas path 130 and is bubbled, the pressure of the auxiliary gas in the source gas path 130 directly affects the bubbling effect. Arranging the pressure gauge 300 in the source gas path 130 can more accurately detect the gas pressure of the auxiliary gas introduced into the source bottle 120, thereby reducing the possible misjudgment of the pressure gauge 300.

[0057] Please refer to Figure 1 Further, in some embodiments, the pressure gauge 300 is arranged in the mixed gas path 160A and is used to monitor the gas pressure in the mixed gas path 160A. Compared with other positions, since the mixed gas path 160A collects gas from different pipelines, the internal gas pressure is more likely to fluctuate. Arranging the pressure gauge 300 in the mixed gas path 160A can more sensitively monitor the gas pressure in the dilution pipeline 100, and make the pressure relief valve 220 respond faster when the gas pressure in the mixed gas path 160A is too high, so as to more ensure that the gas pressure in the dilution pipeline 100 remains at a stable level.

[0058] It should be noted that since the inlet ends of the source gas inlet path 130 and the dilution gas path 150A are both connected to the auxiliary gas through the mass flow controller, the mass flow controller can keep the gas pressure in the source gas inlet path 130 and the dilution gas path 150A within a reasonable range by adjusting the flow rate. Therefore, the pressure gauge 300 is arranged in the mixed gas path 160A to monitor the pressure of the mixed gas path 160A, which can further ensure the stability of the gas pressure in the source gas inlet path 130.

[0059] Please refer to Figure 3 Further, in some embodiments, the dilution pipeline 100 further comprises a secondary mass flow controller 110C, a secondary dilution gas path 150B, and a secondary mixed gas path 160B. The secondary mass flow controller 110C is connected to the inlet end of the secondary dilution gas path 150B and can adjust the flow rate of the auxiliary gas flowing into the inlet end of the secondary dilution gas path 150B. The outlet end of the mixed gas path 160A is connected to the inlet end of the secondary mixed gas path 160B, and the outlet end of the secondary dilution gas path 150B is connected to the secondary mixed gas path 160B. The above scheme can collect the gas in the mixed gas path 160A and the secondary dilution gas path 150B through the secondary mixed gas path 160B, so that the flow rate of the auxiliary gas finally flowing into the secondary mixed gas path 160B increases, further reducing the proportion of the source gas bubble flow in the entire mixed gas flow, and achieving secondary dilution of the source gas bubble.

[0060] The pressure gauge of the above-mentioned embodiments is arranged in the mixed gas path 160A, so that the pressure relief valve 220 can respond faster when the gas pressure in the mixed gas path 160A is too high, and the gas pressure in the dilution pipeline 100 can be kept at a stable level. Without departing from the inventive concept of the present application, the pressure gauge 300 can also be arranged at other positions.

[0061] Please refer to Figure 4 In some embodiments, the pressure gauge 300 is arranged in the secondary mixed gas path 160B and is used to monitor the gas pressure in the secondary mixed gas path 160B. Compared with other positions, the secondary mixed gas path 160B collects the gas in the mixed gas path 160A and the secondary dilution gas path 150B, so the internal gas pressure is more likely to fluctuate. Arranging the pressure gauge 300 in the secondary mixed gas path 160B can more sensitively monitor the gas pressure in the dilution pipeline 100, so that the pressure relief valve 220 can respond faster when the gas pressure in the secondary mixed gas path 160B is too high, and the gas pressure in the dilution pipeline 100 can be reduced.

[0062] Please refer to Figure 5As shown, further, in some embodiments, the dilution line 100 further comprises an inlet source one-way valve 170A disposed in the inlet source gas line 130 and configured to limit the backflow of the auxiliary gas at the outlet end of the inlet source gas line 130 to the inlet end. The inlet source one-way valve 170A disposed in the inlet source gas line 130 can prevent the backflow of the auxiliary gas at the outlet end of the inlet source gas line 130 to the inlet end, thereby avoiding the backflow of the gas with source bubbles in the source bottle 120 to the inlet end of the inlet source gas line 130, and improving the process stability.

[0063] In other embodiments, the dilution line 100 further comprises an outlet gas one-way valve 170B disposed in the outlet source gas line 140 and configured to limit the backflow of the auxiliary gas at the outlet end of the outlet source gas line 140 to the inlet end. The outlet gas one-way valve 170B disposed in the outlet source gas line 140 can prevent the backflow of the auxiliary gas at the outlet end of the outlet source gas line 140 to the inlet end, thereby avoiding the backflow of the gas in the mixing gas line 160A and the dilution gas line 150A through the outlet source gas line 140 to the source bottle 120, and improving the process stability.

[0064] The skilled in the art can individually dispose the inlet source one-way valve 170A or the outlet gas one-way valve 170B according to the actual needs of the line design, or simultaneously dispose the inlet source one-way valve 170A and the outlet gas one-way valve 170B in the dilution line 100.

[0065] Please refer to Figure 6 As shown, further, in some embodiments, the atomic layer deposition line structure further comprises a mixing mass flow controller 400 disposed in the mixing gas line 160A and dividing the mixing gas line 160A into a first mixing section 161A and a second mixing section 162A, the mixing mass flow controller 400 being capable of receiving the gas in the first mixing section 161A and adjusting the gas flow into the second mixing section 162A; the first mixing section 161A being in communication with the inlet end of the control gas line 210; and the pressure gauge 300 being disposed in the first mixing section 161A and configured to monitor the gas pressure in the first mixing section 161A. Through the above scheme, the mixing mass flow controller 400 can adjust the gas flow after dilution. The pressure gauge 300 disposed in the first mixing section 161A and the control gas line 210 can avoid the excessive gas pressure in the dilution line 100, thereby ensuring that the flow control effect of the mixing mass flow controller 400 remains stable.

[0066] Further, in some embodiments, the atomic layer deposition pipeline structure further comprises an auxiliary mass flow controller 500 and an auxiliary gas pipeline 600, the auxiliary mass flow controller 500 is communicated with an inlet end of the auxiliary gas pipeline 600 and can adjust the flow of the auxiliary gas entering the inlet end of the auxiliary gas pipeline 600, and an outlet end of the auxiliary gas pipeline 600 is used to enter the gas into the reaction cavity 10. The reaction cavity 10 is used for atomic layer deposition reaction, and the gas of the mixed gas pipeline 160A will also be finally entered into the reaction cavity 10 for atomic layer deposition reaction. Through the above scheme, the atomic layer deposition pipeline structure can separately enter the pure auxiliary gas into the reaction cavity 10 through the auxiliary gas pipeline 600 when used for atomic layer deposition reaction, so as to dilute the gas of the mixed gas pipeline 160A when entering the reaction cavity 10 together with the gas of the mixed gas pipeline 160A, and also can be separately entered into the reaction cavity 10 for purging work.

[0067] Please refer to Figure 7-9 The utility model also proposes an atomic layer deposition pipeline system, the atomic layer deposition pipeline system has reaction cavity 10, reaction cavity 10 is used for atomic layer deposition reaction, the atomic layer deposition pipeline system further includes the atomic layer deposition pipeline structure of any one in the above-mentioned embodiment, wherein the source bottle 120 of one atomic layer deposition pipeline structure is used to set up oxygen source, and the source bottle 120 of another atomic layer deposition pipeline structure is used to set up metal source, and the outlet end of the mixed gas pipeline 160A of each atomic layer deposition pipeline structure is communicated with reaction cavity 10.

[0068] Each atomic layer deposition pipeline structure can contain the mixed ratio between the adjusted auxiliary gas flow with source bubbles and the pure auxiliary gas through the mass flow controller, since the source bottles 120 of the two atomic layer deposition pipeline structures in any one of the above-mentioned embodiments are respectively provided with oxygen source and metal source, the atomic layer deposition pipeline system can enter the mixed gas with different sources and different concentrations into the reaction cavity 10, and realize atomic layer deposition reaction under different conditions. In the above-mentioned pipeline system, since each atomic layer deposition pipeline structure can reduce the influence of excessive gas in its own pipeline, the mixed gas with source released from the atomic layer deposition pipeline structure into the reaction cavity 10 is more stable, and the stability of atomic layer deposition reaction is improved.

[0069] The atomic layer deposition pipeline system of the utility model can include two atomic layer deposition pipeline structures, and under the premise of not departing from the inventive concept of the utility model, the two atomic layer deposition pipeline structures can be different embodiments described above.

[0070] Exemplarily, the pressure gauges 300 of the atomic layer deposition pipeline structures of different embodiments described above can be arranged at different positions; please refer to Figure 1 、 Figure 2As shown in FIG. 1, in some embodiments of the ALD pipeline system, the pressure gauge 300 of one ALD pipeline structure of the ALD pipeline system is arranged in the source gas pipeline 130. Figure 1 As shown in FIG. 1, in some embodiments of the ALD pipeline system, the pressure gauge 300 of one ALD pipeline structure of the ALD pipeline system is arranged in the source gas pipeline 130. Figure 2 As shown in FIG. 1, in some embodiments of the ALD pipeline system, the pressure gauge 300 of one ALD pipeline structure of the ALD pipeline system is arranged in the source gas pipeline 130.

[0071] For example, the ALD pipeline structure of some embodiments mentioned above can realize secondary dilution of the source gas bubbles through the secondary mass flow controller 110C, the secondary dilution gas pipeline 150B and the secondary mixing gas pipeline 160B, etc. Please refer to Figure 1 、 Figure 3 As shown in FIG. 1, in some embodiments of the ALD pipeline system, the pressure gauge 300 of one ALD pipeline structure of the ALD pipeline system is arranged in the source gas pipeline 130. Figure 1 As shown in FIG. 1, in some embodiments of the ALD pipeline system, the pressure gauge 300 of one ALD pipeline structure of the ALD pipeline system is arranged in the source gas pipeline 130. Figure 3 Through the above scheme, the person skilled in the art can more accurately adjust the proportion of the gas flowing into the reaction chamber 10 through the mass flow controller of different ALD pipeline structures to meet the needs of more complex ALD reactions and improve the compatibility of the ALD pipeline system for different ALD reactions.

[0072] As a preferred embodiment of the ALD pipeline system, please refer to Figure 8 As shown in FIG. 1, in some embodiments of the ALD pipeline system, the pressure gauge 300 of one ALD pipeline structure of the ALD pipeline system is arranged in the source gas pipeline 130. When the gas in the ALD pipeline structure enters the reaction chamber 10, the auxiliary mass flow controller 500 can directly introduce the auxiliary gas into the reaction chamber 10 through the auxiliary gas pipeline 600, so that the auxiliary gas passing through the auxiliary gas pipeline 600 can be further mixed with the gas in the ALD pipeline structure in the reaction chamber 10, thereby changing the proportion of the bubbles containing different sources in the reaction chamber or introducing the auxiliary gas into the reaction chamber 10 for cleaning.

[0073] The ALD pipeline system of the utility model can further include more than two ALD pipeline structures.

[0074] For example, in some embodiments of the ALD pipeline system, the ALD pipeline system includes three ALD pipeline structures, one of the source bottles 120 of the ALD pipeline structure is used to set an oxygen source, another source bottle 120 of the ALD pipeline structure is used to set a metal source, and the remaining source bottle 120 of the ALD pipeline structure is used to set a doping source, which can be a reactant other than the oxygen source and the metal source for the ALD reaction. Through the above scheme, the ALD pipeline system can perform more complex ALD reactions, and the ALD pipeline system can pass mixed gas with different sources and different concentrations into the reaction chamber 10 to realize ALD reactions under different conditions. In the above ALD pipeline system, since each ALD pipeline structure can reduce the influence of excessive gas in the pipeline, the source mixed gas released from the ALD pipeline structure into the reaction chamber 10 has stronger stability, and the stability of the ALD reaction is improved.

[0075] For example, the above has described the embodiment of realizing multi-stage dilution through different ALD pipeline structures. In some embodiments of the ALD pipeline system, the ALD pipeline system includes three ALD pipeline structures, one of the source bottles 120 of the ALD pipeline structure is used to set an oxygen source, and the ALD pipeline structure is a two-stage dilution structure; another source bottle 120 of the ALD pipeline structure is used to set a metal source, and the ALD pipeline structure is a one-stage dilution structure; and the remaining source bottle 120 of the ALD pipeline structure is used to set a metal source, and the ALD pipeline structure is a two-stage dilution structure. Through the above scheme, those skilled in the art can more accurately adjust the mass flow controllers of different ALD pipeline structures to meet the needs of more complex ALD reactions, and improve the compatibility of the ALD pipeline system for different ALD reactions.

[0076] In addition to the above embodiments, those skilled in the art can also combine ALD pipeline structures of other different embodiments, and can set more number of ALD pipeline structures in one ALD pipeline system.

[0077] Please refer to Figure 9 Further, in some embodiments, the ALD pipeline system further includes a pressure reducing valve 700, the inlet end of the pressure reducing valve 700 is used to pass the auxiliary gas, and the outlet end of the pressure reducing valve 700 is communicated with the inlet end of each source mass flow controller 110A and the inlet end of each dilution mass flow controller 110B. The pressure reducing valve 700 can effectively reduce the pressure of the auxiliary gas passing into the inlet end of the mass flow controller, so that the mass flow controller is in a more stable working state.

[0078] The utility model embodiment makes the detailed explanation above binding the drawing, but the utility model is not limited to the above -mentioned embodiment, still can make various changes in the knowledge range that the person skilled in the art has possessed without departing from the utility model's tenet premise. Besides, in the case of not conflicting, the embodiment and the feature in the embodiment of the utility model can be combined mutually.

Claims

1. An atomic layer deposition piping structure, characterized by, The application relates to a dilution pipeline, a residual pressure release pipeline, a pressure gauge and a mixed mass flow controller. The dilution pipeline comprises an inlet source mass flow controller, a dilution mass flow controller, a source bottle, an inlet source gas pipeline, an outlet source gas pipeline, a dilution gas pipeline and a mixed gas pipeline; the inlet source mass flow controller is connected to the inlet end of the inlet source gas pipeline and can adjust the flow of auxiliary gas into the inlet end of the inlet source gas pipeline; the outlet end of the inlet source gas pipeline is connected to the inlet end of the source bottle; the outlet end of the source bottle is connected to the inlet end of the outlet source gas pipeline; the outlet end of the outlet source gas pipeline is connected to the inlet end of the mixed gas pipeline; the dilution mass flow controller is connected to the inlet end of the dilution gas pipeline and can adjust the flow of auxiliary gas into the inlet end of the dilution gas pipeline; and the outlet end of the dilution gas pipeline is connected to the inlet end of the mixed gas pipeline. The residual pressure release pipeline comprises a control gas pipeline and a pressure release valve; the mixed gas pipeline is connected to the inlet end of the control gas pipeline; and the pressure release valve is arranged in the control gas pipeline and separates the inlet end and the outlet end of the control gas pipeline. The pressure gauge is arranged in the dilution pipeline and used for monitoring the gas pressure in the dilution pipeline; the pressure release valve is opened and closed according to the monitoring value of the pressure gauge; when the pressure gauge monitors that the gas pressure in the dilution pipeline increases to a preset value, the pressure release valve is opened to connect the inlet end and the outlet end of the control gas pipeline and reduce the gas pressure in the dilution pipeline.

2. An atomic layer deposition piping structure according to claim 1, characterized in that The pressure gauge is arranged in the mixed gas pipeline and used for monitoring the gas pressure in the mixed gas pipeline.

3. The atomic layer deposition piping structure according to claim 1, characterized by The pressure gauge is arranged in the inlet source gas pipeline and used for monitoring the gas pressure in the inlet source gas pipeline.

4. The atomic layer deposition piping structure according to claim 1, characterized by The dilution pipeline further comprises a secondary mass flow controller, a secondary dilution gas pipeline and a secondary mixed gas pipeline; the secondary mass flow controller is connected to the inlet end of the secondary dilution gas pipeline and can adjust the flow of auxiliary gas into the inlet end of the secondary dilution gas pipeline; the outlet end of the mixed gas pipeline is connected to the inlet end of the secondary mixed gas pipeline; and the outlet end of the secondary dilution gas pipeline is connected to the secondary mixed gas pipeline.

5. An atomic layer deposition piping structure according to claim 4, characterized in that The pressure gauge is arranged in the secondary mixed gas pipeline and used for monitoring the gas pressure in the secondary mixed gas pipeline.

6. The atomic layer deposition piping structure according to claim 1, characterized by The dilution pipeline further comprises an inlet source one-way valve arranged in the inlet source gas pipeline and used for limiting the backflow of auxiliary gas from the outlet end to the inlet end of the inlet source gas pipeline; and / or the dilution pipeline further comprises an outlet gas one-way valve arranged in the outlet source gas pipeline and used for limiting the backflow of auxiliary gas from the outlet end to the inlet end of the outlet source gas pipeline.

7. The atomic layer deposition piping structure according to claim 1, characterized by The mixed mass flow controller is arranged in the mixed gas pipeline and divides the mixed gas pipeline into a first mixed section and a second mixed section; the mixed mass flow controller can receive the gas in the first mixed section and adjust the flow of gas into the second mixed section; the first mixed section is connected to the inlet end of the control gas pipeline; and the pressure gauge is arranged in the first mixed section and used for monitoring the gas pressure in the first mixed section.

8. The atomic layer deposition piping structure according to claim 1, characterized by The system further comprises an auxiliary mass flow controller, which is connected to an inlet end of an auxiliary gas pipeline and is capable of adjusting the flow of auxiliary gas into the inlet end of the auxiliary gas pipeline, and an outlet end of the auxiliary gas pipeline is used to introduce gas into the reaction cavity.

9. An atomic layer deposition piping system having a reaction chamber for an atomic layer deposition reaction, characterized by, The atomic layer deposition pipeline system comprises: two atomic layer deposition pipeline structures as claimed in any one of claims 1 to 8, the source bottle of one of the atomic layer deposition pipeline structures is used to set an oxygen source, and the source bottle of the other of the atomic layer deposition pipeline structures is used to set a metal source; and the outlet end of the mixed gas pipeline of each of the atomic layer deposition pipeline structures is connected to the reaction cavity.

10. The atomic layer deposition piping system according to claim 9, characterized by The system further comprises a pressure reducing valve, an inlet end of the pressure reducing valve is used to introduce auxiliary gas, and an outlet end of the pressure reducing valve is connected to the inlet end of each of the source mass flow controllers and the inlet end of each of the dilution mass flow controllers.

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