Power module and electronic equipment

Abstract

The utility model provides a power module and electronic equipment. The power module comprises a driving assembly and a power device, the driving assembly and the power device are suitable for being arranged on the same circuit board, and the driving assembly is electrically connected with the power device. Therefore, equivalently, the driving assembly and the power device are integrated on the same circuit board, the electric connection between the driving assembly and the power device can be realized on the circuit board, the overall size of the power module can be greatly reduced, the power density of the power module is improved, and meanwhile, the driving assembly and the power device are electrically connected on the same circuit board, so that the power density of the power module is improved. Therefore, the driving path of the driving assembly for the power device can be greatly shortened, stray inductance generated by the driving path is effectively reduced, the advantages of high speed and high power of the power device are fully played, and the working performance of the power module is improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor, in particular to a power module and electronic equipment. BACKGROUND

[0002] The third generation semiconductor is a wide band gap semiconductor material mainly based on silicon carbide (SiC) and gallium nitride (GaN), which has superior performance such as high frequency, high efficiency and high power, and is a key core material supporting the independent innovation development and transformation and upgrading of new energy vehicles, mobile communications, energy internet and other industries.

[0003] In the related art, the stray inductance of the power module prepared based on the gallium nitride semiconductor device is large, and the power density is low, which cannot meet the increasingly strict high-standard power module requirements. CONTENT OF THE UTILITY MODEL

[0004] Therefore, the present application provides a power module and electronic equipment to at least solve the problem of large stray inductance and low power density of the power module in the related art.

[0005] To achieve the above-mentioned purpose, the technical scheme of the present application is as follows:

[0006] The present application provides a power module, which comprises a driving assembly and a power device; the driving assembly and the power device are adapted to be arranged on the same circuit board, and the driving assembly is electrically connected with the power device.

[0007] Optionally, it further comprises a heat dissipation member; the heat dissipation member is connected to a first surface of the circuit board, and / or the heat dissipation member is connected to a second surface of the circuit board, and the first surface and the second surface are different surfaces of the circuit board.

[0008] Optionally, the power device is arranged on the first surface or the second surface, the surface of the power device away from the circuit board is insulated, and the heat dissipation member is connected to the surface of the power device away from the circuit board.

[0009] Optionally, the power device is at least two, and at least two power devices form a first bridge arm and a second bridge arm; the driving assembly is electrically connected with the first bridge arm and the second bridge arm respectively, and the driving assembly is adapted to drive the first bridge arm and the second bridge arm to be turned on or turned off.

[0010] Optionally, the driving assembly comprises a driving chip, and the driving chip is electrically connected with the first bridge arm and the second bridge arm respectively; the signal transmission path length between the first bridge arm and the driving chip is equal to the signal transmission path length between the second bridge arm and the driving chip.

[0011] Optionally, the power devices constituting the first bridge arm are N in number, the power devices constituting the second bridge arm are N in number, and the power devices constituting the first bridge arm and the power devices constituting the second bridge arm are symmetrically arranged; wherein N is a positive integer greater than or equal to 1.

[0012] Optionally, the power device is a gallium nitride die, the gallium nitride die comprises a gate, a source and a drain, wherein the gate of the gallium nitride die is electrically connected with the driving assembly, one of the source and the drain of the gallium nitride die is adapted to input a signal, and the other is adapted to output a signal.

[0013] Optionally, a first via hole is formed in the circuit board, and the gate of the gallium nitride die is electrically connected with the driving assembly through the first via hole.

[0014] Optionally, a first connection terminal is further provided on the circuit board, and a second via hole is further formed in the circuit board, and the source of the gallium nitride die is electrically connected with the first connection terminal through the second via hole.

[0015] Optionally, the first connection terminal is embedded in the surface of the circuit board.

[0016] Optionally, a second connection terminal is further provided on the circuit board, a third via hole is further formed in the circuit board, and the drain of the gallium nitride die is electrically connected with the second connection terminal through the third via hole.

[0017] Optionally, the second connection terminal is embedded in the surface of the circuit board.

[0018] Optionally, the driving assembly is provided on a first surface of the circuit board, and the power device is provided on a second surface of the circuit board.

[0019] Optionally, the driving assembly is provided on a first surface of the circuit board, and the power device is embedded in the circuit board.

[0020] Optionally, the driving assembly and the power device are respectively embedded in the circuit board.

[0021] Optionally, the first surface and the second surface are different surfaces of the circuit board.

[0022] The application further provides an electronic device comprising a load and the power module according to any one of the preceding embodiments, wherein the power module is adapted to convert alternating current and / or direct current and input the converted alternating current and / or direct current to the load.

[0023] Compared with the prior art, the power module and the electronic device according to the application have the following advantages:

[0024] In the power module of the present application, the driving assembly and the power device are arranged on the circuit board, which is equivalent to integrating the driving assembly and the power device on the same circuit board. The driving assembly and the power device can be electrically connected on the circuit board. Compared with the power module in the related art, the overall volume of the power module can be greatly reduced, and the power density of the power module can be improved. At the same time, the driving assembly and the power device are electrically connected on the same circuit board, which can greatly shorten the driving path of the driving assembly to the power device, thereby effectively reducing the stray inductance generated by the driving path, fully exerting the advantages of high speed and high power of the power device, and improving the working performance of the power module.

[0025] The electronic device of the present application has the same or similar advantages as the aforementioned power module compared with the prior art, which will not be described here. BRIEF DESCRIPTION OF DRAWINGS

[0026] The accompanying drawings, which form a part of the present application, are included to provide a further understanding of the application, and are incorporated herein for purposes of illustrating the illustrative embodiments of the present application and the explanations provided herein. In the drawings:

[0027] Figure 1 is a schematic diagram of a power module in an embodiment of the present application;

[0028] Figure 2 is an exploded view of the structure of a power module in an embodiment of the present application;

[0029] Figure 3 is a schematic diagram of another power module in an embodiment of the present application;

[0030] Figure 4 is a schematic diagram of another power module in an embodiment of the present application;

[0031] Figure 5 is an arrangement diagram of a power device in an embodiment of the present application;

[0032] Figure 6 is a circuit diagram of a driving assembly driving a power device in an embodiment of the present application;

[0033] Figure 7 is a side view of a first bridge arm or a second bridge arm gate wiring in an embodiment of the present application;

[0034] Figure 8 is a top view of a first bridge arm or a second bridge arm gate wiring in an embodiment of the present application;

[0035] Figure 9 is a side view of a first bridge arm or a second bridge arm source wiring in an embodiment of the present application;

[0036] Figure 10is a top view of a first bridge arm or a second bridge arm source line in an embodiment of the present application;

[0037] Figure 11 is a side view of a first bridge arm or a second bridge arm drain line in an embodiment of the present application;

[0038] Figure 12 is a top view of a first bridge arm or a second bridge arm drain line in an embodiment of the present application;

[0039] Figure 13 is a side view of a first bridge arm or a second bridge arm Kelvin source line in an embodiment of the present application;

[0040] Figure 14 is a top view of a first bridge arm or a second bridge arm Kelvin source line in an embodiment of the present application. DETAILED DESCRIPTION

[0041] The technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are some of the embodiments of the present application, but not all the embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work fall within the scope of protection of the present application.

[0042] The terms “first”, “second”, and the like in the specification and claims of the present application are used to distinguish similar objects, and are not used to describe a specific order or sequence. It should be understood that the data used in this way can be exchanged under appropriate circumstances, so that the embodiments of the present application can be implemented in an order other than that illustrated or described herein, and the objects distinguished by “first”, “second”, etc. are generally a category and do not limit the number of objects, for example, the first object can be one or more. In addition, “and / or” in the specification and claims means at least one of the connected objects, and the character “ / ” generally represents an “or” relationship between the front and rear associated objects.

[0043] The terms “include”, “contain” or any other variants thereof in the specification and claims of the present application are intended to cover non-exclusive inclusion, so that the process, method, article or terminal device including a series of elements not only includes those elements, but also includes other elements not explicitly listed or inherent to such process, method, article or terminal device. Without more limitations, the element defined by the statement “including a…” does not exclude the presence of another identical element in the process, method, article or terminal device including the element.

[0044] A power module and an electronic device are provided in the present application.

[0045] With reference to Figure 1 and Figure 2 The power module provided in the present application comprises a driving assembly 2 and a power device 3; the driving assembly 2 and the power device 3 are adapted to be arranged on the same circuit board 1, and the driving assembly 2 is electrically connected with the power device 3.

[0046] Specifically, the power device 3 can be made of silicon-based semiconductor materials such as silicon carbide (SiC), silicon nitride (Si3N4), silicon germanium (SiGe) and the like, or can be made of gallium nitride (GaN), gallium arsenide (GaAs) and the like, and the specific selection can be adapted according to the requirements of the power module. In the present application, the power device 3 made of gallium nitride semiconductor material is exemplarily described.

[0047] The circuit board 1 is a PCB (Printed Circuit Board), which is a basic component for supporting and connecting various electronic components. It forms a complete circuit with other electrical components through conductive paths, connectors and the like. The PCB is composed of multiple dielectric layers and multiple conductive layers, as shown in Figure 2 The multiple dielectric layers and the multiple conductive layers are arranged alternately, and the dielectric layer has good insulation. In the present application, the dielectric layer comprises a dielectric building layer filled with fiber reinforced material, and the fiber reinforced material comprises glass fiber reinforced epoxy resin composite material, which has good thermal stability, high strength, high modulus and low price, and helps to improve the stability of the dielectric layer and control the processing cost. The conductive layer has good electrical conductivity and can be made of metal or other materials with high electrical conductivity, such as copper, aluminum, silver and the like, which can transmit the current or signal of the electronic component.

[0048] In the related art, the power module comprising a gallium nitride power device usually has two circuit boards. The driving assembly is integrated on one circuit board, and the gallium nitride power device is arranged on the other circuit board. The two circuit boards are electrically connected to realize the driving control of the driving assembly on the gallium nitride power device. However, the power module prepared in this way has large stray inductance and low power density, which will cause a series of problems in the working of the power module, such as the change of current on the delay circuit, the increase of the on or off time of the power device, the limitation of the switching speed and working frequency of the power device, the false opening of the power device, and even the safety problem of the system.

[0049] In the embodiment of the present application, the driving assembly 2 and the gallium nitride power device 3 are both arranged on the circuit board 1, which is equivalent to integrating the driving assembly 2 and the gallium nitride power device 3 on the same circuit board. The electrical connection between the driving assembly 2 and the gallium nitride power device 3 can be realized on the circuit board. Compared with the power module in the related art, the overall volume of the power module can be greatly reduced, and the power density of the power module can be improved. At the same time, the driving assembly 2 and the gallium nitride power device 3 are electrically connected on the same circuit board, which can greatly shorten the driving path of the driving assembly 2 to the gallium nitride power device 3, thereby effectively reducing the stray inductance generated by the driving path, fully exerting the advantages of high speed and high power of the power device 3, and improving the working performance of the power module. Of course, the power device 3 can also use other types of devices, and the embodiment of the present application will not be described here.

[0050] Figure 2 The structure of the power module is shown in an exploded view as shown in FIG. 1. Figure 2 As shown in FIG. 1, the circuit board 1 includes a first surface 10 and a second surface 20.

[0051] A solder resist layer 101, a second solder resist layer 102, a core layer 160, a via 170, a first conductive layer 111, a first dielectric layer 112, a second conductive layer 121, a second dielectric layer 122, a third conductive layer 131, a fourth conductive layer 141, a fourth dielectric layer 142, a fifth conductive layer 151, and a fifth dielectric layer 152 are arranged alternately. The two surfaces of the core layer 160 are covered with copper foil and can be used as a conductive layer. The first solder resist layer 101 is arranged on the top of the circuit board 1, and the second solder resist layer 102 is arranged on the bottom of the circuit board 1. The first solder resist layer 101 and the second solder resist layer 102 are thin polymer materials that are suitable for protecting integrated circuits on the circuit board 1 and preventing solder from flowing into areas that do not need to be soldered during the soldering process.

[0052] In some optional embodiments, the driving assembly 2 is arranged on the first surface of the circuit board 1, and the power device 3 is arranged on the second surface of the circuit board 1; or, the driving assembly 2 is arranged on the first surface of the circuit board 1, and the power device 3 is embedded in the circuit board 1; or, the driving assembly 2 and the power device 3 are respectively embedded in the circuit board 1; wherein the first surface and the second surface are different surfaces of the circuit board.

[0053] Specifically, the first surface and the second surface are different surfaces of the circuit board. For example, the first surface is the upper surface of the circuit board, and the second surface is the lower surface of the circuit board. The driving assembly 2 and the power device 3 have multiple arrangement modes on the circuit board 1. In the embodiment of the present application, the driving assembly 2 is arranged on the first surface of the circuit board 1, and the power device 3 is embedded in the circuit board 1. Figure 1 Figure 2 ​In the exploded view of the power module shown, the drive component 2 is disposed on the first surface of the circuit board 1, located on the first solder mask layer 101, and the power device 3 is embedded inside the circuit board 1, located between the fifth dielectric layer 152 and the second solder mask layer 102. The drive component 2 can be surface-mounted to the first surface of the circuit board 1. Surface mount technology (SMT) directly mounts the drive component 2 to the surface of the circuit board 1 without requiring through-holes on the circuit board 1. This allows for the installation of more drive components 2 within a smaller space on the circuit board 1, facilitating the miniaturization of the power module design. Furthermore, the high-speed, precise, and low-loss soldering process improves the electrical connection performance between the drive component 2 and the circuit board 1.

[0054] In some layout configurations, the driving component 2 is disposed on the first surface of the circuit board 1, and the power device 3 is disposed on the second surface of the circuit board 1. In other layout configurations, the driving component 2 and the power device 3 are respectively embedded inside the circuit board 1. In still other layout configurations, the driving component 2 and the power device 3 are integrated on the same chip via on-chip integration, and this chip is disposed on the first or second surface of the circuit board 1. Wherein, if the driving component 2 and the power device 3 are respectively embedded inside the circuit board 1, or integrated on the same...

[0055] On a single chip, this helps to further shorten the driving path of the driving component 2 to the power device 3, thereby further reducing the stray inductance generated by the driving path, improving the working performance of the power module, and at the same time further reducing the overall size of the power module and improving space utilization.

[0056] In some alternative embodiments, reference is made to Figures 1 to 4 The power module of this application also includes a heat sink 4; the heat sink 4 is connected to the first surface of the circuit board 1, and / or the heat sink 4 is connected to the second surface of the circuit board 1.

[0057] Specifically, since the drive component 2, power device 3, and circuit board 1 all generate heat during operation, causing the power module temperature to rise, and excessively high temperatures can affect the normal operation of each component, a heat sink 4 is also provided on the circuit board 1. The heat sink 4 needs to be insulated from the circuit board 1 to avoid short circuits, etc. Therefore, the heat sink 4 is located on the first or second surface of the circuit board 1. Figure 2 As shown, the first surface of the circuit board 1 has a first solder mask layer 101, and the second surface of the circuit board 1 has a second solder mask layer 102. Both the first solder mask layer 101 and the second solder mask layer 102 have insulating areas. Therefore, the heat sink 4 can be connected to the first solder mask layer 101 or the second solder mask layer 102 to dissipate heat during the operation of each device and maintain the normal temperature of the power module.

[0058] In some optional embodiments, the power device 3 is arranged on the first surface or the second surface of the circuit board 1, the surface of the power device 3 away from the circuit board 1 is insulated, and the heat dissipation member 4 is connected to the surface of the power device 3 away from the circuit board 1. In this case, the power device 3 can be a gallium nitride high electron mobility transistor (GaN HEMT). The gallium nitride high electron mobility transistor has higher electron mobility, saturation electron velocity and breakdown field, and can realize smaller on-resistance and gate charge, thereby having better conduction performance and switching performance, and being more suitable for high-frequency application occasions and more helpful to improve the efficiency and power density of the power module. At the same time, the bottom surface of the gallium nitride high electron mobility transistor is an insulating surface, so when the gallium nitride high electron mobility transistor is arranged on the first surface or the second surface of the circuit board 1, the heat dissipation member 4 can be directly connected to the bottom surface of the gallium nitride high electron mobility transistor. In this case, the heat dissipation member 4 and the gallium nitride high electron mobility transistor have a shorter heat dissipation path, and can have better heat dissipation effect.

[0059] However, on this basis, when the driving assembly 2 is arranged on the first surface of the circuit board 1, the heat dissipation member 4 can usually be arranged on the second surface of the circuit board 1 to avoid affecting the electrical connection of the driving assembly 2. When the driving assembly 2 is embedded in the circuit board 1, the heat dissipation member 4 can be arranged on the first surface of the circuit board 1 or the second surface of the circuit board 1.

[0060] Figure 3 In the schematic diagram of the power module shown, the heat dissipation member 4 is arranged on the second surface of the circuit board 1, Figure 4 In the schematic diagram of the power module shown, the heat dissipation member 4 is arranged on the first surface and the second surface of the circuit board 1, respectively.

[0061] In addition, in order to realize sufficient connection between the heat dissipation member 4 and the circuit board 1 and improve the heat dissipation efficiency, the heat dissipation member 4 can adopt the structure of a heat dissipation plate, such as an aluminum heat dissipation plate, a copper heat dissipation plate, an alloy heat dissipation plate or a composite material heat dissipation plate, and can further adopt the structure of a finned heat dissipation plate to improve the heat dissipation efficiency. The connection between the heat dissipation plate and the circuit board 1 or the gallium nitride high electron mobility transistor can be one of fastener assembly connection, laser welding and adhesive connection, and the embodiments of the present application are not limited in this regard.

[0062] In some optional embodiments, referring to Figure 5 and Figure 6 , the power device 3 is at least two, and the at least two power devices 3 form a first bridge arm 301 and a second bridge arm 302; the driving assembly 2 is electrically connected to the first bridge arm 301 and the second bridge arm 302, respectively, and the driving assembly 2 is adapted to drive the first bridge arm 301 and the second bridge arm 302 to be turned on or turned off.

[0063] ​Specifically, circuit board 1 is provided with two or more power devices 3. Figure 5 In the power device layout diagram shown, circuit board 1 has eight power devices, which form a first bridge arm 301 and a second bridge arm 302. The number of power devices in the first bridge arm 301 and the number of power devices in the second bridge arm 302 can be the same or different, depending on the requirements of the power module. The drive assembly 2 is electrically connected to the first bridge arm 301 and the second bridge arm 302 respectively, and is adapted to drive the first bridge arm 301 and the second bridge arm 302 to be turned on or off. When the first bridge arm 301 or the second bridge arm 302 is turned on, the first bridge arm 301 or the second bridge arm 302 can receive signals and output signals.

[0064] In some optional embodiments, the driving component 2 includes a driving chip, which is electrically connected to the first bridge arm 301 and the second bridge arm 302 respectively; the signal transmission path length between the first bridge arm 301 and the driving chip is equal to the signal transmission path length between the second bridge arm 302 and the driving chip.

[0065] Specifically, in addition to the driver chip, driver component 2 also includes multiple components such as input ports, capacitors, resistors, and inverters. Figure 6 In the circuit diagram showing the driving component 2 driving the power device 3, the input port is used to receive the input signal. The input signal can be a PWM (Pulse Width Modulation) signal, which is a square wave signal that adjusts the average voltage or power output by changing the pulse width. Inverter ( Figure 6 (As shown in A1 and A2) are connected to the input port, and the inverter is used.

[0066] The device can output input signals of different frequency ranges in the form of "0" or "1", thereby achieving input signal debouncing, improving load capacity, and reducing signal delay. Driver chip ( Figure 6 As shown in U1, it is connected to the inverter and can receive a stable signal from the inverter. Based on the received signal, it outputs a drive signal. The drive signal passes through the gate resistor ( Figure 6 R3 and R4 are shown in the diagram) and the filter circuit ( Figure 6The C1, R4, and C2, R2 (as shown in the diagram) reach the gate of power device 3, thereby driving the first bridge arm 301 and the second bridge arm 302 to conduct or disconnect. The driving signal is a voltage of different amplitudes. For example, when the driving chip outputs a high amplitude voltage, either the first bridge arm 301 or the second bridge arm 302 is turned on; when the driving chip outputs a low amplitude voltage, either the first bridge arm 301 or the second bridge arm 302 is turned off. By controlling the on / off time of the first bridge arm 301 and the second bridge arm 302, the power module can convert DC power to AC power. In this embodiment, the driving chip drives one of the first bridge arm 301 and the second bridge arm 302 to conduct and the other to disconnect within the same time period, thus enabling the power module to have more functions.

[0067] In this embodiment, the first bridge arm 301 and the second bridge arm 302 can be driven by a single driver chip 21. In practical applications, the positions of the first bridge arm 301 and the second bridge arm 302 can be reasonably set according to the position of the driver chip on the circuit board 1, so that the signal transmission path length between the first bridge arm 301 and the driver chip is equal to the signal transmission path length between the second bridge arm 302 and the driver chip. This helps to ensure that the drive signal of the driver chip reaches the first bridge arm 301 and the second bridge arm 302 simultaneously, reducing the probability of drive signal delay and thus avoiding the situation where the first bridge arm 301 and the second bridge arm 302 are mistakenly turned on or off.

[0068] In some alternative embodiments, reference is made to Figure 5 There are N power devices 3 constituting the first bridge arm 301 and N power devices 3 constituting the second bridge arm 302. The power devices constituting the first bridge arm 301 and the power devices constituting the second bridge arm 302 are arranged symmetrically, where N is a positive integer greater than or equal to 1.

[0069] Specifically, Figure 5 In the power device layout diagram shown, four power devices constitute the first bridge arm 301: power device 31, power device 32, power device 33, and power device 34. Similarly, four power devices constitute the second bridge arm 302: power device 35, power device 36, power device 37, and power device 38. Figure 5 As shown, power devices 31 and 35 are symmetrically arranged, power devices 32 and 36 are symmetrically arranged, power devices 33 and 37 are symmetrically arranged, and power devices 34 and 38 are symmetrically arranged, forming a circuit structure in which the first bridge arm 301 and the second bridge arm 302 are symmetrically arranged. Symmetrical arrangement means that the power devices or bridge arms have a one-to-one correspondence in size, shape, and arrangement relative to a point, a straight line, or a plane. Figure 5In the embodiment, the power devices of the first bridge arm 301 and the power devices of the second bridge arm 302 are symmetrically arranged relative to the midpoint in the physical positions of the two bridge arms, which is more convenient for the wiring design of each power device, thereby reducing the processing difficulty of the power module, and the symmetric circuit can offset the magnetic field, thereby further reducing the stray inductance generated by the circuit and improving the working performance of the power module.

[0070] In some optional embodiments, the power device 3 is a gallium nitride die, which includes a gate, a source and a drain, wherein the gate of the gallium nitride die is electrically connected with the driving assembly, and one of the source and the drain of the gallium nitride die is adapted to input a signal and the other is adapted to output a signal.

[0071] Specifically, the gallium nitride die can be a gallium nitride high electron mobility transistor, and the first bridge arm 301 and the second bridge arm 302 are respectively composed of a plurality of gallium nitride dies, the plurality of gallium nitride dies in the first bridge arm 301 are connected in series with each other, the plurality of gallium nitride dies in the second bridge arm 302 are connected in series with each other, the gates of the plurality of gallium nitride dies in the first bridge arm 301 and the second bridge arm 302 are respectively electrically connected with the driving chip in the driving assembly for receiving the driving signal output by the driving chip and controlling the conduction or disconnection of the gallium nitride die through the driving signal. The source of the gallium nitride die is used for receiving an external signal, and the drain is used for outputting a processed signal. Under the action of the driving signal, the first bridge arm 301 and the second bridge arm 302 can convert direct current into alternating current output.

[0072] In some optional embodiments, referring to Figure 7 and Figure 8 , the circuit board 1 is provided with a first via, and the gate of the gallium nitride die is electrically connected with the driving assembly through the first via.

[0073] Specifically, Figure 7 a side sectional view of the wiring of the gate of the first bridge arm or the second bridge arm is shown, as Figure 7 shown, the circuit board 1 is provided with a first via (as shown in 171a and 171b in Figure 7 ), and the gate of the gallium nitride die (as shown in 3g in Figure 7 ) is electrically connected with the second conductive layer 121 of the circuit board 1 through the first via 171b, and the second conductive layer 121 is electrically connected with the driving chip 21 in the driving assembly through the first via 171a. This connection mode replaces the traditional connection mode of the lead pin, which helps to reduce the stray inductance generated by the driving circuit, thereby improving the working performance of the power module.

[0074] Figure 8 a top view of the wiring of the gate of the first bridge arm or the second bridge arm is shown, as Figure 8As shown, the driving chip 21 is placed in the middle position of the first bridge arm 301 and the second bridge arm 302, so that the driving paths of the first bridge arm 301 and the second bridge arm 302 are equal in length, thereby reducing the probability of mis-turn-on and improving the accuracy of driving. The conductive layer 121 connected to the first bridge arm 301 is symmetrically arranged with the conductive layer 121 connected to the second bridge arm 302, which plays a role of mutual cancellation of magnetic field, thereby further reducing the stray inductance generated by the driving circuit and improving the working performance of the power module.

[0075] In some optional embodiments, with reference to Figures 9 to 12 , the circuit board 1 is further provided with a first connection terminal 11 and a second connection terminal 12; the circuit board is further provided with a second via hole and a third via hole, the source electrode of the gallium nitride tube core is electrically connected to the first connection terminal 11 through the second via hole, and the drain electrode of the gallium nitride tube core is electrically connected to the second connection terminal 12 through the third via hole.

[0076] Specifically, Figure 9 A side view of a first bridge arm or a second bridge arm source electrode wiring is shown, as Figure 9 shown, the circuit board 1 is provided with a second via hole (such as Figure 9 indicated by 172a and 172b), and the source electrode (such as Figure 9 indicated by 3s) of the gallium nitride tube core is electrically connected to the third conductive layer 131 of the circuit board 1 through the second via hole 172b, and the third conductive layer 131 is electrically connected to the first connection terminal 11 on the surface of the circuit board 1 through the second via hole 172a, and the input of the positive current and the negative current is realized through the first connection terminal 11. The above connection mode replaces the traditional connection mode of binding wire and terminal, which helps to reduce the stray inductance generated when the first bridge arm and the second bridge arm input signals, thereby improving the working performance of the power module.

[0077] Figure 10 A top view of a first bridge arm or a second bridge arm source electrode wiring is shown, as Figure 10 shown, the positive current and the negative current are connected to the first connection terminal 11 to realize input, and the conductive layer 131 connected to the first bridge arm 301 is symmetrically arranged with the conductive layer 131 connected to the second bridge arm 302. This structure can make the flow directions of the positive current and the negative current opposite to each other, thereby helping to reduce the stray inductance.

[0078] Figure 11 A side view of a first bridge arm or a second bridge arm drain electrode wiring is shown, as Figure 11 shown, the circuit board 1 is provided with a third via hole (such as Figure 11 indicated by 173a and 173b), and the drain electrode (such as Figure 11The third via hole 173b is electrically connected with the fourth conductive layer 141 of the circuit board 1, and the fourth conductive layer 141 is electrically connected with the second connection terminal 12 on the surface of the circuit board 1 through the third via hole 173a, so that the positive current and the negative current are output through the second connection terminal 12. The above connection mode replaces the traditional connection mode of binding wires and terminals, which helps to reduce the stray inductance generated when the first bridge arm and the second bridge arm output signals, thereby improving the working performance of the power module.

[0079] Figure 12 A top view of the first bridge arm or the second bridge arm is shown in FIG. 3. Figure 12 As shown in FIG. 3, the positive current and the negative current are connected with the second connection terminal 12 to realize output, and the conductive layer 141 connected with the first bridge arm 301 is symmetrically arranged with the conductive layer 141 connected with the second bridge arm 302, which is beneficial to the current sharing of the circuits of the first bridge arm 301 and the second bridge arm 302.

[0080] It should be noted that the hole walls of the first via hole, the second via hole and the third via hole in the above embodiment are plated with a plating layer, which can be a copper layer, a nickel layer, a nickel-gold layer, a nickel-copper-gold layer, etc., so that the first via hole, the second via hole and the third via hole have conductive capacity and can effectively realize the electrical connection between the gallium nitride die and each conductive layer.

[0081] In some optional embodiments, referring to FIG. 4, Figures 9 to 12 The first connection terminal 11 and the second connection terminal 12 can be made of materials with good conductive performance such as copper, aluminum, nickel, etc., and are embedded on the surface of the circuit board 1. The first connection terminal 11 and the second connection terminal 12 can be arranged on the first surface of the circuit board 1 or the second surface of the circuit board 1, which can be arranged according to actual connection requirements, and the present embodiment is not limited in this regard. The first connection terminal 11 and the second connection terminal 12 are embedded on the surface of the circuit board 1, which has high stability and high reliability in connection with the circuit board 1, and helps to ensure the smooth input and output of signals.

[0082] In another embodiment of the present application, the gallium nitride die has a fourth pin in addition to the gate, the source and the drain, which is a Kelvin source. The first bridge arm 301 and the second bridge arm 302 can be arranged in the form of Kelvin source wiring, Figure 13 A schematic diagram of a first bridge arm or a second bridge arm arranged in the form of Kelvin source wiring is shown in FIG. 5, in which the gallium nitride die is connected with the Kelvin source conductive layer 121 through the via hole 174, and the Kelvin source conductive layer 121 is electrically connected with the driving die 21 through the via hole 174. Figure 14 A schematic diagram of the Kelvin source conductive layer is shown in FIG. 6. Figure 14As shown, the conductive layers 121 of the first bridge arm 301 and the conductive layers 121 of the second bridge arm 302 are symmetrically arranged, so that the lengths of the driving paths of the first bridge arm 301 and the second bridge arm 302 are equal, the probability of false opening is reduced, and the system safety is improved.

[0083] The embodiment of the present application also provides an electronic device, which comprises a load and the power module according to any one of the preceding embodiments, and the power module is adapted to convert AC power and / or DC power and input the converted power to the load. Since the power module has excellent working performance, the electronic device formed thereby also has better working performance.

[0084] It should be understood that throughout the specification, reference to“some embodiments” means that a particular feature, structure, or characteristic described is included in at least one embodiment of the application. Therefore, appearances of“in some embodiments” not necessarily refer to the same embodiments of the application. Furthermore, the particular features, structures, or characteristics can be combined in any suitable manner in one or more embodiments.

[0085] Finally, it should be noted that the above-mentioned only the preferred embodiments of the present application, and not to limit the present application, any modifications, equivalent replacements, improvements, etc. made in the spirit and principles of the present application, should be included within the scope of the present application.

Claims

1. A power module, characterized by The drive assembly and the power device are adapted to be arranged on the same circuit board, and the drive assembly is electrically connected with the power device. The power device is at least two, and the at least two power devices form a first bridge arm and a second bridge arm; the drive assembly is electrically connected with the first bridge arm and the second bridge arm respectively, and the drive assembly is adapted to drive the first bridge arm and the second bridge arm to be turned on or turned off. Further comprising a heat dissipation component; 2. The power module of claim 1, wherein, The heat dissipation component is connected to a first surface of the circuit board, and / or the heat dissipation component is connected to a second surface of the circuit board, and the first surface and the second surface are different surfaces of the circuit board. The power device is arranged on the first surface or the second surface, and the surface of the power device away from the circuit board is insulated, and the heat dissipation component is connected to the surface of the power device away from the circuit board.

3. The power module of claim 2, wherein, The drive assembly comprises a drive chip, and the drive chip is electrically connected with the first bridge arm and the second bridge arm respectively.

4. The power module of claim 1, wherein, The length of the signal transmission path between the first bridge arm and the drive chip is equal to the length of the signal transmission path between the second bridge arm and the drive chip. The power devices constituting the first bridge arm are N, the power devices constituting the second bridge arm are N, and the power devices constituting the first bridge arm and the power devices constituting the second bridge arm are symmetrically arranged; wherein N is a positive integer greater than or equal to 1.

5. The power module of claim 1, wherein, The power device is a gallium nitride die, and the gallium nitride die comprises a gate, a source and a drain, wherein the gate of the gallium nitride die is electrically connected with the drive assembly, one of the source and the drain of the gallium nitride die is adapted to input a signal, and the other is adapted to output a signal.

6. The power module of claim 1, wherein, A first via hole is formed in the circuit board, and the gate of the gallium nitride die is electrically connected with the drive assembly through the first via hole.

7. The power module of claim 6, wherein, A first connection terminal is further arranged on the circuit board, and a second via hole is further formed in the circuit board, and the source of the gallium nitride die is electrically connected with the first connection terminal through the second via hole.

8. The power module of claim 6, wherein, The first connection terminal is embedded in the surface of the circuit board.

9. The power module of claim 8, wherein, A second connection terminal is further arranged on the circuit board, and a third via hole is further formed in the circuit board, and the drain of the gallium nitride die is electrically connected with the second connection terminal through the third via hole.

10. The power module of claim 6, wherein, The second connection terminal is embedded in the surface of the circuit board.

11. The power module of claim 10, wherein, The drive assembly is arranged on a first surface of the circuit board, and the power device is arranged on a second surface of the circuit board; 12. The power module according to any one of claims 1 to 11, characterized in that Or, the drive assembly is arranged on a first surface of the circuit board, and the power device is embedded in the circuit board; Or, the drive assembly and the power device are embedded in the circuit board respectively. The first surface and the second surface are different surfaces of the circuit board. The power module is adapted to convert alternating current and / or direct current and input to the load.

13. An electronic device, comprising: ​

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