A power terminal block structure and a power semiconductor module

Abstract

This utility model relates to the field of electronic device technology, specifically to a power terminal group structure and a power semiconductor module, including a first power terminal and a second power terminal. Both the first and second power terminals are gate-shaped structures mounted on an insulating substrate. The vertical connection portions of the first and second power terminals are mirror-symmetrical structures. This utility model, through the mirror-symmetrical layout of the gate-shaped terminals, constructs a tightly coupled, low-inductance commutation circuit with minimized area. It utilizes the magnetic field cancellation effect of the reverse current to significantly suppress stray inductance, thereby reducing switching losses and voltage spikes, improving the module's switching frequency capability and power density, and enhancing system reliability.

Description

Technical Field

[0001] This utility model relates to the field of electronic device technology, specifically to a power terminal group structure and a power semiconductor module. Background Technology

[0002] High-power semiconductor modules, as core execution units in modern power conversion and control systems, are experiencing a significant expansion in their application areas. From traditional applications such as rail transit traction converters and industrial frequency converters, this technology is rapidly penetrating rapidly growing emerging fields such as new energy vehicle electric drive systems, photovoltaic / wind power inverters, supercharging piles, and data center power supplies, exhibiting a diversified expansion trend. Along with this expansion in application scope, downstream markets are continuously increasing their demands for module power density. Especially in application scenarios with stringent packaging space constraints, there is an urgent need to achieve a breakthrough in power handling capacity per unit volume through comprehensive means such as material innovation, structural optimization, and advanced heat dissipation design, in order to meet the pressing demands of terminal systems evolving towards higher efficiency, miniaturization, and higher reliability.

[0003] However, in the pursuit of higher power density, the stray inductance within the module has become an increasingly prominent bottleneck. Stray inductance has a significant and detrimental impact on the switching losses of power semiconductor devices, directly limiting the upper limit of the module's switching frequency (switching density), and also causing voltage spikes and electromagnetic interference, thereby threatening system reliability.

[0004] Therefore, effectively reducing stray inductance within power semiconductor modules has become a core challenge and technical difficulty in achieving breakthroughs in power density, increasing switching density, and enhancing overall module reliability. Utility Model Content

[0005] To address the above technical problems, this utility model provides a power terminal group structure and a power semiconductor module.

[0006] The technical problem solved by this utility model can be achieved by the following technical solution:

[0007] A power terminal block structure includes: a first power terminal and a second power terminal.

[0008] Both the first power terminal and the second power terminal have a gate-shaped structure and are mounted on an insulating substrate;

[0009] The vertical connection portion of the first power terminal and the vertical connection portion of the second power terminal are mirror-symmetrical structures.

[0010] Preferably, the first power terminal serves as both an anode terminal and an AC output terminal, allowing for the multiplexing of functions of a single physical terminal; the second power terminal serves as a cathode terminal.

[0011] Preferably, the first power terminal includes:

[0012] The first mounting section is used for external circuit connection;

[0013] The first vertical connecting part is vertically connected to the lower end of the first mounting part, and is used to conduct current and form a mirror symmetrical path;

[0014] The first lateral connecting part is horizontally connected to the bottom of the first vertical connecting part and is used for support and current transition;

[0015] The first terminal pin is vertically connected to the end of the first transverse connecting portion and extends downward, for fixing the terminal to the insulating substrate;

[0016] The second power terminal includes:

[0017] The second mounting section is used for external circuit connection;

[0018] The second vertical connecting part is vertically connected to the lower end of the second mounting part, and is used to conduct current and form a mirror symmetrical path;

[0019] The second horizontal connecting part is horizontally connected to the bottom of the second vertical connecting part and is used for support and current transition;

[0020] The second terminal pin is vertically connected to the end of the second transverse connection portion and extends downward, for fixing the terminal to the insulating substrate.

[0021] Preferably, the size of the first terminal pin is smaller than that of the first transverse connecting portion, and the size of the first terminal pin decreases outward or inward from the first transverse connecting portion.

[0022] Preferably, the size of the second terminal pin is smaller than that of the second lateral connecting portion, and the size of the second terminal pin decreases outward or inward from the second lateral connecting portion.

[0023] Preferably, the current directions between the first vertical connecting portion and the second vertical connecting portion are opposite.

[0024] Preferably, the first power terminal and the second power terminal are made of copper or copper alloy.

[0025] A power semiconductor module is also provided, comprising:

[0026] Copper substrate;

[0027] An insulating substrate is deposited on the copper substrate;

[0028] And a power terminal group structure as described above, wherein the first power terminal and the second power terminal are mounted on the insulating substrate.

[0029] Preferably, the first power terminal and the second power terminal are fixed to the insulating substrate by welding.

[0030] Preferably, the insulating substrate is a direct copper-clad ceramic substrate or an active metal brazed ceramic substrate.

[0031] Beneficial effects: By adopting the above technical solution, this utility model constructs a tightly coupled and minimally area-minimized low-inductance commutation circuit through the mirror symmetrical layout of the gate-type terminals. It significantly suppresses stray inductance by utilizing the magnetic field cancellation effect of the reverse current, thereby reducing switching losses and voltage spikes, improving the switching frequency capability and power density of the module, and enhancing system reliability. Attached Figure Description

[0032] Figure 1 This is a schematic diagram of the overall structure of this utility model;

[0033] Figure 2 This is a schematic diagram of the structure of the first power terminal of this utility model;

[0034] Figure 3 This is a schematic diagram of the structure of the second power terminal of this utility model;

[0035] Explanation of reference numerals in the attached drawings: 1. First power terminal; 2. Second power terminal; 3. Copper substrate; 4. Insulating substrate; 11. First mounting part; 12. First vertical connecting part; 13. First horizontal connecting part; 14. First terminal pin; 21. Second mounting part; 22. Second vertical connecting part; 23. Second horizontal connecting part; 24. Second terminal pin. Detailed Implementation

[0036] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the protection scope of the present utility model.

[0037] It should be noted that, unless otherwise specified, the embodiments and features described in these embodiments can be combined with each other.

[0038] The present invention will be further described below with reference to the accompanying drawings and specific embodiments, but this is not intended to limit the present invention.

[0039] Reference Figure 1 This utility model provides a power terminal group structure, including:

[0040] First power terminal 1 and second power terminal 2,

[0041] Both the first power terminal 1 and the second power terminal 2 are gate-shaped structures and are mounted on the insulating substrate 4;

[0042] The vertical connecting portion of the first power terminal 1 and the vertical connecting portion of the second power terminal 2 are mirror-symmetrical structures.

[0043] Specifically, in this embodiment of the present invention, in order to construct an extremely low inductance commutation path, the vertical connection between the first power terminal 1 and the second power terminal 2 is designed as a tightly fitted mirror symmetrical layout, so that the magnetic fields generated by the currents of the two terminals cancel each other out. At the same time, by utilizing the integrated mechanical support characteristics of the gate structure, the problem of increased loop area caused by assembly tolerance of traditional flat terminals is avoided, thereby effectively suppressing stray inductance of the power circuit and realizing voltage spike attenuation and system reliability improvement under high-frequency switching conditions.

[0044] In a preferred embodiment of the present invention, the first power terminal 1 serves as both an anode terminal and an AC output terminal (AC, Alternating Current), for the multiplexing of the functions of a single physical terminal; the second power terminal 2 serves as a cathode terminal.

[0045] Specifically, in this embodiment of the present invention, the physical structure of the first power terminal 1 integrates the contacts of the DC anode terminal and the AC output terminal, but the two are isolated by internal circuitry to ensure that they do not conduct at the same time.

[0046] As a preferred embodiment of this utility model, refer to Figure 2 The first power terminal 1 includes:

[0047] The first mounting part 11 is used for external circuit connection;

[0048] The first vertical connecting part 12 is vertically connected to the lower end of the first mounting part 11 and is used to conduct current and form a mirror symmetrical path;

[0049] The first lateral connecting part 13 is horizontally connected to the bottom of the first vertical connecting part 12 and is used for support and current transition;

[0050] The first terminal 14 is vertically connected to the end of the first transverse connecting portion 13 and extends downward, for fixing the first power terminal 1 to the insulating substrate 4.

[0051] The size of the first terminal pin 14 is smaller than that of the first transverse connecting portion 13, and the size of the first terminal pin 14 can decrease outward or inward from the first transverse connecting portion 13.

[0052] As a preferred embodiment of this utility model, refer to Figure 3 The second power terminal 2 includes:

[0053] The second mounting section 21 is used for external circuit connection;

[0054] The second vertical connecting part 22 is vertically connected to the lower end of the second mounting part 21 and is used to conduct current and form a mirror symmetrical path;

[0055] The second horizontal connecting part 23 is horizontally connected to the bottom of the second vertical connecting part 22 and is used for support and current transition;

[0056] The second terminal 24 is vertically connected to the end of the second transverse connecting portion 23 and extends downward, for fixing the second power terminal 2 to the insulating substrate 4.

[0057] The second terminal pin 24 is smaller than the second transverse connecting portion 23, and the size of the second terminal pin 24 can decrease outward or inward from the second transverse connecting portion 23.

[0058] Specifically, in this embodiment of the invention, the optimized design of the dimensions of the first terminal 14 and the second terminal 24 (which can be reduced outwards or inwards) significantly releases the surface space of the insulating substrate 4. This space saving allows for the welding of larger area semiconductor chips or the integration of more chip units within a limited package, thereby increasing the power density to an industry-leading level without increasing the module volume, supporting the high output power requirements of applications such as new energy vehicle electric drive systems or photovoltaic inverters.

[0059] As a preferred embodiment of this utility model, refer to Figure 2 and Figure 3 The current directions between the first vertical connecting part 12 and the second vertical connecting part 22 are opposite.

[0060] Specifically, in this embodiment of the invention, the first power terminal 1 and the second power terminal 2 are designed with a precise mirror symmetry. The first vertical connection portion 12 carries the positive current flow, while the second vertical connection portion 22 carries the negative current flow, with the current directions being strictly opposite. This design, through the mirror symmetry of the physical structure, ensures that the current flowing through adjacent areas generates magnetic fields in opposite directions. When the current flows through the first vertical connection portion 12 and the second vertical connection portion 22, the magnetic field generated by the positive current cancels out the magnetic field generated by the negative current, thereby significantly reducing stray inductance inside the module. This cancellation effect not only optimizes the switching performance of the power semiconductor device, reduces switching losses and voltage spike risks, but also suppresses electromagnetic interference, improves the overall reliability and stability of the system, and supports the realization of higher switching frequencies, providing key technical support for the high power density and miniaturization evolution of the module.

[0061] In a preferred embodiment of this utility model, the first power terminal 1 and the second power terminal 2 are made of copper or copper alloy.

[0062] Specifically, in this embodiment of the present invention, the first power terminal 1 and the second power terminal 2 can be designed using high-purity copper or copper alloy materials. This choice is based on multiple technical advantages: First, copper has excellent conductivity, which can significantly reduce resistance loss in the current transmission path, thereby improving power conversion efficiency and reducing heat generation; Second, copper alloys, while maintaining high conductivity, enhance mechanical strength and fatigue resistance, ensuring that the terminals maintain structural stability and durability under frequent switching operations and high current loads, avoiding connection failures caused by thermal expansion or vibration; In addition, copper has high thermal conductivity, which helps to quickly conduct the heat generated inside the module to the heat dissipation system. Combined with advanced heat dissipation design (such as copper substrate 3), it optimizes thermal management and improves the overall reliability of the module; Finally, the surface of copper or copper alloy is easy to plate, which not only improves the oxidation and corrosion resistance of the terminals, but also ensures welding compatibility with the insulating substrate 4, achieving low impedance and high reliability electrical connections, thereby supporting the long-term stable operation of the module in high power density and high switching frequency application scenarios.

[0063] Reference Figure 1 A power semiconductor module is also provided, comprising:

[0064] Copper substrate 3;

[0065] An insulating substrate 4 is deposited on the copper substrate 3;

[0066] And a power terminal group structure as described above, wherein the first power terminal 1 and the second power terminal 2 are mounted on the insulating substrate 4.

[0067] In a preferred embodiment of the present invention, the first power terminal 1 and the second power terminal 2 are fixed to the insulating substrate 4 by welding.

[0068] Specifically, in this embodiment of the invention, the copper substrate 3 is designed with high thermal conductivity copper material, serving as the core heat dissipation and mechanical support structure of the module. Its excellent thermal conductivity efficiently conducts the heat generated by the semiconductor chip to the external heat dissipation system, ensuring stable operation of the module under high-temperature conditions. An insulating substrate 4 is deposited on the copper substrate 3, providing electrical isolation and a thermal conduction bridge. Its surface is fixed with precision welding technology to the terminal pins (first terminal pin 14 and second terminal pin 24) of the first power terminal 1 and the second power terminal 2, forming a low-impedance electrical connection. Furthermore, the terminal material is a high-conductivity copper alloy, which, combined with the heat dissipation capacity of the copper substrate 3, achieves efficient thermal management, ensuring the long-term reliability of the module under high-frequency switching above 100kHz and harsh environments, meeting the comprehensive needs of terminal systems evolving towards higher efficiency, miniaturization, and higher reliability.

[0069] In a preferred embodiment of the present invention, the insulating substrate 4 is a direct bonded copper ceramic substrate (DBC) or an active metal brazing ceramic substrate (AMB).

[0070] Specifically, in this embodiment of the invention, the insulating substrate 4 employs DBC or AMB technology. These substrates use precision processes to directly bond a high-purity copper layer onto a ceramic substrate, providing excellent electrical insulation performance and effectively isolating potential short-circuit risks under high-voltage environments. They also possess excellent thermal conductivity, efficiently transferring heat generated by the semiconductor chip to the copper substrate 3, optimizing the overall heat dissipation efficiency of the module, and ensuring stable operation under high-temperature and high-current conditions. Furthermore, the low coefficient of thermal expansion (CTE) of the DBC / AMB substrate closely matches the semiconductor chip, significantly reducing thermal cycling stress, preventing solder joint cracking or delamination, and improving the long-term reliability and durability of the module. Its surface flatness and mechanical strength support high-precision soldering processes, enabling the terminals (first terminal 14 and second terminal 24) of the first power terminal 1 and the second power terminal 2 to achieve a low-impedance, high-reliability fixed connection, further reducing contact resistance and energy loss.

[0071] The above description is only a preferred embodiment of the present utility model and does not limit the implementation method and protection scope of the present utility model. Those skilled in the art should realize that all solutions obtained by equivalent substitutions and obvious changes made based on the description and illustrations of the present utility model should be included within the protection scope of the present utility model.

Claims

1. A power terminal set structure, characterized by, include: First power terminal and second power terminal Both the first power terminal and the second power terminal have a gate-shaped structure and are mounted on an insulating substrate; The vertical connection portion of the first power terminal and the vertical connection portion of the second power terminal are mirror-symmetrical structures.

2. A power terminal set structure according to claim 1, characterized in that The first power terminal serves as both an anode terminal and an AC output terminal, enabling the multiplexing of functions of a single physical terminal; the second power terminal serves as a cathode terminal.

3. The power terminal group structure according to claim 1, characterized in that, The first power terminal includes: The first mounting section is used for external circuit connection; The first vertical connecting part is vertically connected to the lower end of the first mounting part, and is used to conduct current and form a mirror symmetrical path; The first lateral connecting part is horizontally connected to the bottom of the first vertical connecting part and is used for support and current transition; The first terminal pin is vertically connected to the end of the first transverse connecting portion and extends downward, for fixing the terminal to the insulating substrate; The second power terminal includes: The second mounting section is used for external circuit connection; The second vertical connecting part is vertically connected to the lower end of the second mounting part, and is used to conduct current and form a mirror symmetrical path; The second horizontal connecting part is horizontally connected to the bottom of the second vertical connecting part and is used for support and current transition; The second terminal pin is vertically connected to the end of the second transverse connection portion and extends downward, for fixing the terminal to the insulating substrate.

4. A power terminal set structure according to claim 3, characterized in that The size of the first terminal pin is smaller than that of the first transverse connecting portion, and the size of the first terminal pin decreases outward or inward from the first transverse connecting portion.

5. A power terminal set structure according to claim 3, wherein The second terminal pin is smaller than the second lateral connecting portion, and the size of the second terminal pin decreases outward or inward from the second lateral connecting portion.

6. A power terminal set structure according to claim 3, wherein The current directions between the first vertical connecting part and the second vertical connecting part are opposite.

7. A power terminal set structure according to claim 1, wherein The first power terminal and the second power terminal are made of copper or copper alloy.

8. A power semiconductor module, characterized by include: Copper substrate; An insulating substrate is deposited on the copper substrate; And a power terminal group structure as described in any one of claims 1-7, wherein the first power terminal and the second power terminal are mounted on the insulating substrate.

9. A power semiconductor module according to claim 8, characterized in that, The first power terminal and the second power terminal are fixed to the insulating substrate by welding.

10. A power semiconductor module according to claim 8, characterized in that The insulating substrate is a direct copper-clad ceramic substrate or an active metal brazed ceramic substrate.

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