A gallium nitride mos structure for coordinated control of multiple motors in a quadruped robot

Abstract

This invention relates to the field of MOS semiconductor technology and discloses a gallium nitride (GaN) MOS structure for multi-motor cooperative control in quadruped robots. The structure includes a substrate, a gallium nitride (GaN) structure, an intermediate dielectric, and a MOS structure. The GaN structure includes a buffer layer, a GaN layer, an aluminum gallium nitride (AlGaN) layer, a GaN gate, a GaN source, a GaN drain, and a P-gaN layer. The MOS structure includes a diffusion layer, a MOS drain, a MOS gate, a MOS source, a dielectric layer, and a P-well layer. The GaN structure and the MOS structure are located on the front and rear sides of the intermediate dielectric, respectively. This invention integrates the GaN structure and the MOS structure on both sides of the substrate, and utilizes the GaN source and MOS source, and the GaN drain and MOS drain to form an internal inductor structure with the intermediate dielectric. This design effectively suppresses high-frequency current surges and voltage spikes without the need for an external inductor, significantly reduces switching losses, and improves current sharing characteristics among multi-motor drive channels.

Description

Technical Field

[0001] This invention relates to the field of MOS semiconductor technology, and in particular to a gallium nitride MOS structure for multi-motor cooperative control in quadruped robots. Background Technology

[0002] In the multi-motor cooperative control system of quadruped robots, multiple high-frequency switching devices are usually required to drive the motors of different joints. Existing technologies mostly use a discrete combination of silicon-based MOSFETs and gallium nitride devices, but the gate drive voltages of the two are mismatched, requiring additional level conversion circuits.

[0003] Furthermore, high-frequency switching processes are prone to problems such as voltage spikes, electromagnetic interference, and uneven current flow. In addition, gallium nitride devices themselves have current collapse effects and dynamic on-resistance degradation, making it difficult for the system to meet the requirements for stability and energy efficiency under high load and long-term operation. Summary of the Invention

[0004] This invention provides a gallium nitride MOS structure for multi-motor cooperative control in quadruped robots to solve existing technical problems, thereby eliminating the need for additional level conversion circuits in existing silicon-based MOSFET and gallium nitride combined devices.

[0005] To solve the above-mentioned technical problems, according to one aspect of the present invention, more specifically, a gallium nitride MOS structure for multi-motor cooperative control in a quadruped robot, comprising a substrate, a gallium nitride structure, an intermediate dielectric, and a MOS structure; the gallium nitride structure includes a buffer layer, a gallium nitride layer, an aluminum gallium nitride layer, a gallium nitride gate, a gallium nitride source, a gallium nitride drain, and a p-gallium nitride layer; The MOS structure includes a diffusion layer, a MOS drain, a MOS gate, a MOS source, a dielectric layer, and a P-well layer. The gallium nitride structure and the MOS structure are located on the front and back sides of the intermediate dielectric, respectively. The gallium nitride source and the MOS source, and the gallium nitride drain and the MOS drain are located on the front and back sides of the intermediate dielectric, respectively. The gallium nitride source, intermediate dielectric, and MOS source form an inductor structure, and the gallium nitride drain, intermediate dielectric, and MOS drain form an inductor structure. A resistive layer is provided between the gallium nitride gate and the MOS gate. The resistive layer is used to form a potential difference between the gallium nitride gate and the MOS gate. The potential difference can meet the different gate voltage requirements of the gallium nitride structure and the MOS structure.

[0006] Furthermore, the buffer layer, gallium nitride layer, and aluminum gallium nitride layer are arranged sequentially from bottom to top, and the gallium nitride source and gallium nitride drain are located on the left and right sides of the aluminum gallium nitride layer, respectively.

[0007] Furthermore, the gallium nitride gate is located above the aluminum gallium nitride layer and close to the gallium nitride source side, and the P gallium nitride layer is located between the gallium nitride gate and the aluminum gallium nitride layer.

[0008] Furthermore, the P-well layer is located on both sides inside the diffusion layer, the MOS drain is in ohmic contact with the left P-well layer, and the MOS source is in ohmic contact with the right P-well layer.

[0009] Furthermore, the MOS gate is located between the MOS drain and the MOS source, and the dielectric layer is located below the MOS gate.

[0010] Furthermore, an intermediate doped layer is formed in the inner middle region of the diffusion layer through ion implantation, and the bottom end of the intermediate doped layer is in direct contact with the substrate, wherein the intermediate doped layer is a P-type semiconductor material.

[0011] Furthermore, an upper doped layer is formed inside the diffusion layer and between the two P-well layers by ion implantation. The upper doped layer is in direct contact with the intermediate doped layer, and the upper doped layer is a heavily doped N-type semiconductor material.

[0012] Furthermore, side doped layers are formed inside the diffusion layer and on the left and right sides of the intermediate doped layer by ion implantation. The top of the side doped layer is in direct contact with the upper doped layer, and the bottom of the side doped layer is in direct contact with the substrate. The side doped layers are made of heavily doped N-type semiconductor material.

[0013] Furthermore, a co-doped layer is formed inside the aluminum gallium nitride layer and near the gallium nitride layer by co-doping with carbon and iron.

[0014] This invention provides a gallium nitride MOS structure for multi-motor cooperative control in quadruped robots. Compared with existing technologies, the advantages of this method are: 1. This invention integrates gallium nitride (GaN) and MOS structures on both sides of a substrate, and utilizes the GaN source and MOS source, GaN drain and MOS drain to form an internal inductor structure with the intermediate dielectric. This design can effectively suppress high-frequency current surges and voltage spikes without the need for an external inductor, reducing electromagnetic interference. At the same time, it forms an LC resonant network with the device's parasitic capacitance to achieve soft switching conditions, significantly reducing switching losses and improving the current sharing characteristics between multi-motor drive channels, thereby enhancing the dynamic response speed and anti-interference capability of multi-motor collaborative control of quadruped robots.

[0015] 2. This invention forms a controllable potential difference by setting a resistive layer between the gallium nitride gate and the MOS gate, which can meet the different gate drive voltage requirements of the two heterogeneous devices respectively, realize voltage matching and cooperative driving, avoid the additional delay and area overhead caused by external level conversion circuit, enhance the flexibility of gate driving, and enable the quadruped robot to maintain a high-frequency and high-reliability cooperative working state under multi-motor dynamic load.

[0016] 3. This invention constructs a three-dimensional PN depletion region with vertical and lateral recombination by sequentially forming a P-type intermediate doped layer, a heavily doped N-type upper doped layer, and a heavily doped N-type side doped layer in the diffusion layer of a MOS structure through ion implantation. This effectively modulates the channel electric field distribution and optimizes the carrier transport path, thereby significantly reducing the on-resistance and Miller capacitance feedback effect, while improving the breakdown voltage and latch-up resistance. This enables the structure to withstand the high voltage and high current impact generated by the multi-motor system of a quadruped robot during high torque start-up or sudden load disturbance, ensuring stable control.

[0017] 4. This invention introduces a deep-level trap center by forming a co-doped layer of carbon and iron inside the aluminum gallium nitride layer and close to the gallium nitride layer. This effectively suppresses the current collapse effect and dynamic on-resistance degradation in the gallium nitride structure, and improves the thermal stability and threshold voltage consistency of the two-dimensional electron gas. This significantly enhances the reliability of gallium nitride devices under high-temperature and high-frequency switching conditions, resulting in lower dynamic losses and longer service life when working in conjunction with the MOS structure. This ensures that the motor drive response of the quadruped robot is stable and the collaborative control accuracy is higher during long-term continuous operation or adaptive movement in complex terrain. Attached Figure Description

[0018] Figure 1 This is a schematic diagram of Embodiment 1 of the present invention; Figure 2 This is a schematic diagram of Embodiment 2 of the present invention; Figure 3 These are schematic diagrams of Embodiments 3 and 4 of the present invention.

[0019] In the figure: 1. Substrate; 2. Gallium nitride structure; 3. Intermediate dielectric; 4. Resistor layer; 5. MOS structure; 201. Buffer layer; 202. Gallium nitride layer; 203. AlGaN layer; 204. Gallium nitride gate; 205. Gallium nitride source; 206. Gallium nitride drain; 207. P-gallium nitride layer; 208. Co-doped layer; 501. Diffusion layer; 502. MOS drain; 503. MOS gate; 504. MOS source; 505. Dielectric layer; 506. Intermediate doped layer; 507. P-well layer; 508. Top doped layer; 509. Side doped layer. Detailed Implementation

[0020] To make the technical solution of the present invention clearer, the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0021] Example 1 like Figure 1 As shown, according to one aspect of the present invention, a gallium nitride MOS structure for multi-motor cooperative control in a quadruped robot is provided, comprising a substrate 1, a gallium nitride structure 2, an intermediate dielectric 3, and a MOS structure 5; the gallium nitride structure 2 includes a buffer layer 201, a gallium nitride layer 202, an aluminum gallium nitride layer 203, a gallium nitride gate 204, a gallium nitride source 205, a gallium nitride drain 206, and a P-well layer 207; the MOS structure 5 includes a diffusion layer 501, a MOS drain 502, a MOS gate 503, a MOS source 504, a dielectric layer 505, and a P-well layer 507; the buffer layer 201, the gallium nitride layer 202, and the aluminum gallium nitride layer 203 are arranged sequentially from bottom to top, and the gallium nitride source 205 and the gallium nitride drain 206 are respectively located on the left and right sides of the aluminum gallium nitride layer 203. A gallium nitride (GaN) gate 204 is located above the aluminum gallium nitride (AGaN) layer 203 and close to the GaN source 205. A p-gallium nitride (PGaN) layer 207 is located between the GaN gate 204 and the AGaN layer 203. P-well layers 507 are located on both sides inside the diffusion layer 501. The MOS drain 502 is in ohmic contact with the left P-well layer 507, and the MOS source 504 is in ohmic contact with the right P-well layer 507. The MOS gate 503 is located between the MOS drain 502 and the MOS source 504, and the dielectric layer 505 is located below the MOS gate 503.

[0022] In this embodiment, the gallium nitride structure 2 and the MOS structure 5 are located on the front and rear sides of the intermediate dielectric 3, respectively. The gallium nitride source 205 and the MOS source 504, the gallium nitride drain 206 and the MOS drain 502 are located on the front and rear sides of the intermediate dielectric 3, respectively. The gallium nitride source 205, the intermediate dielectric 3 and the MOS source 504 form an inductor structure, and the gallium nitride drain 206, the intermediate dielectric 3 and the MOS drain 502 form an inductor structure. In the multi-motor cooperative control process of quadruped robots, each motor drive branch requires fast, high-frequency pulse width modulation signals. This inductor structure uses an intermediate medium (3) as a magnetic coupling medium and introduces a series equivalent inductance in the source and drain paths, which can effectively suppress current surges, thereby reducing voltage spikes and electromagnetic radiation during the switching process and improving the electromagnetic compatibility of the system.

[0023] Furthermore, the inductor structure, along with the parasitic capacitances of gallium nitride (GaN) and MOS devices, can form an LC resonant network. During gate signal switching, this resonant network can absorb some energy, achieving zero-crossing switching of voltage or current, thereby reducing switching losses and device stress. This is particularly important for multi-motor coordinated control, as multiple motors require synchronous and high dynamic response; soft-switching characteristics help improve the overall system's energy efficiency and reliability.

[0024] Meanwhile, since the inductor structure is connected in series in the source and drain circuits, its equivalent impedance will dampen the high-frequency current component, thereby suppressing the circulating current and oscillation between different motor drive channels, so that each motor can obtain a more balanced current distribution during startup, braking or load change, and enhance the stability of coordinated control.

[0025] A resistive layer 4 is provided between the gallium nitride gate 204 and the MOS gate 503. The resistive layer 4 is used to form a potential difference between the gallium nitride gate 204 and the MOS gate 503. The potential difference can meet the different gate voltage requirements of the gallium nitride structure 2 and the MOS structure 5.

[0026] In this embodiment, the gallium nitride (GaN) structure 2 and the MOS structure 5 are integrated on both sides of the substrate 1 via an intermediate dielectric 3. Parasitic inductance structures are formed between the GaN source 205 and the MOS source 504, and the GaN drain 206 and the MOS drain 502, respectively, and the intermediate dielectric 3. Simultaneously, a resistive layer 4 is introduced between the GaN gate 204 and the MOS gate 503. A controllable potential difference is generated by its voltage drop, thereby satisfying the different gate drive voltage requirements of the GaN device and the MOS device, achieving voltage matching and coordinated control of the heterogeneous devices.

[0027] This design avoids the use of external inductors, significantly reducing system parasitic parameters and board area, and improving response speed and current regulation accuracy in multi-motor cooperative control. The potential difference regulation mechanism provided by resistor layer 4 enhances the flexibility of gate drive, making this structure particularly suitable for high-frequency, high-reliability cooperative working scenarios under dynamic loads of multiple motors in quadruped robots.

[0028] Example 2 like Figure 2 As shown, according to one aspect of the present invention, a gallium nitride MOS structure for multi-motor cooperative control in a quadruped robot is provided, wherein an intermediate doped layer 506 is formed in the inner middle region of the diffusion layer 501 by ion implantation, the bottom end of the intermediate doped layer 506 is in direct contact with the substrate 1, and the intermediate doped layer 506 is a P-type semiconductor material.

[0029] An upper doped layer 508 is formed inside the diffusion layer 501 and between the two P-well layers 507 by ion implantation. The upper doped layer 508 is in direct contact with the intermediate doped layer 506. The upper doped layer 508 is a heavily doped N-type semiconductor material.

[0030] A P-type intermediate doped layer 506 is formed by ion implantation in the middle region inside the diffusion layer 501, with its bottom end in direct contact with the substrate 1. Simultaneously, a heavily doped N-type upper doped layer 508 is implanted between the two P-well layers 507, with the upper doped layer 508 in direct contact with the intermediate doped layer 506. This structure creates a vertical PN junction capacitor and carrier storage layer within the MOS structure 5, effectively modulating the channel electric field distribution and reducing on-resistance.

[0031] The advantages of this design are a significant reduction in switching losses and Miller capacitance feedback effects in the MOS structure 5, improving the stability of the device under high-frequency pulse width modulation control. For multi-motor cooperative control of quadruped robots, this means lower heat generation and higher current output consistency, which is beneficial for achieving more complex gait coordination and torque distribution.

[0032] Example 3 like Figure 3 As shown in Figure A, according to one aspect of the present invention, a gallium nitride MOS structure for multi-motor cooperative control in a quadruped robot is provided. An intermediate doped layer 506 is formed in the middle region of the diffusion layer 501 via ion implantation. The bottom end of the intermediate doped layer 506 is in direct contact with the substrate 1. The intermediate doped layer 506 is a P-type semiconductor material. An upper doped layer 508 is formed in the interior of the diffusion layer 501, located between two P-well layers 507, via ion implantation. The upper doped layer 508 is in direct contact with the intermediate doped layer 506. The upper doped layer 508 is a heavily doped N-type semiconductor material. Side doped layers 509 are formed in the interior of the diffusion layer 501, located on the left and right sides of the intermediate doped layer 506, via ion implantation. The top end of the side doped layer 509 is in direct contact with the upper doped layer 508, and the bottom end of the side doped layer 509 is in direct contact with the substrate 1. The side doped layers 509 are heavily doped N-type semiconductor materials.

[0033] By ion implanting heavily doped N-type side doped layers 509 on both sides of the intermediate doped layer 506, the top end of the side doped layer 508 is connected to the top doped layer 508 and the bottom end is connected to the substrate 1. This structure forms a three-dimensional PN recombination depletion region of "top-middle-side" inside the diffusion layer 501, which enhances the channel pinch-off capability and breakdown voltage characteristics, while optimizing the lateral and longitudinal carrier transport paths.

[0034] Its advantages lie in significantly improving the breakdown voltage and latch-up resistance of the MOS structure 5, and reducing the drain-induced barrier reduction effect. In the multi-motor cooperative control of quadruped robots, this structure can withstand higher bus voltages and larger current surges, making it particularly suitable for stable control under high torque start-up or sudden load disturbance scenarios.

[0035] Example 4 like Figure 3 As shown, according to one aspect of the present invention, a gallium nitride MOS structure for multi-motor cooperative control in a quadruped robot is provided. An intermediate doped layer 506 is formed in the middle region of the diffusion layer 501 via ion implantation. The bottom end of the intermediate doped layer 506 is in direct contact with the substrate 1. The intermediate doped layer 506 is a P-type semiconductor material. An upper doped layer 508 is formed in the interior of the diffusion layer 501, located between two P-well layers 507, via ion implantation. The upper doped layer 508 is in direct contact with the intermediate doped layer 506. The upper doped layer 508 is a heavily doped N-type semiconductor material. Side doped layers 509 are formed in the interior of the diffusion layer 501, located on the left and right sides of the intermediate doped layer 506, via ion implantation. The top end of the side doped layer 509 is in direct contact with the upper doped layer 508, and the bottom end of the side doped layer 509 is in direct contact with the substrate 1. The side doped layers 509 are heavily doped N-type semiconductor materials.

[0036] In this embodiment, a co-doped layer 208 is formed inside the aluminum gallium nitride layer 203 and on the side close to the gallium nitride layer 202 by co-doping with carbon and iron.

[0037] A co-doped layer 208 is formed by co-doping carbon and iron inside the aluminum gallium nitride layer 203 and near the gallium nitride layer 202. This co-doped layer 208 introduces deep-level trap centers, effectively suppressing the current collapse effect and dynamic on-resistance degradation in the gallium nitride structure 2, while improving the thermal stability and threshold voltage consistency of the two-dimensional electron gas.

[0038] This advantage significantly enhances the reliability of the gallium nitride structure 2 under high-temperature, high-frequency switching conditions, resulting in lower dynamic losses and a longer lifespan when working in conjunction with the MOS structure 5. For multi-motor systems in quadruped robots, this means smoother motor drive response, higher collaborative control precision, and a substantial improvement in overall system stability during long-term continuous operation or adaptive motion in complex terrain.

[0039] The above embodiments merely illustrate several implementation methods of the present invention, and their descriptions are relatively specific and detailed, but they should not be construed as limiting the scope of the present invention. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of the present invention, and these all fall within the protection scope of the present invention. Therefore, the protection scope of this patent should be determined by the appended claims.

Claims

1. A gallium nitride MOS structure for multi-motor cooperative control in a quadruped robot, comprising a substrate (1), a gallium nitride structure (2), an intermediate dielectric (3), and a MOS structure (5); the gallium nitride structure (2) comprises a buffer layer (201), a gallium nitride layer (202), an aluminum gallium nitride layer (203), a gallium nitride gate (204), a gallium nitride source (205), a gallium nitride drain (206), and a p-gallium nitride layer (207); The MOS structure (5) includes a diffusion layer (501), a MOS drain (502), a MOS gate (503), a MOS source (504), a dielectric layer (505), and a P-well layer (507), characterized in that: The gallium nitride structure (2) and the MOS structure (5) are located on the front and back sides of the intermediate dielectric (3), respectively. The gallium nitride source (205) and the MOS source (504), the gallium nitride drain (206) and the MOS drain (502) are located on the front and back sides of the intermediate dielectric (3), respectively. The gallium nitride source (205), intermediate dielectric (3) and MOS source (504) form an inductor structure, and the gallium nitride drain (206), intermediate dielectric (3) and MOS drain (502) form an inductor structure. A resistive layer (4) is provided between the gallium nitride gate (204) and the MOS gate (503), and the resistive layer (4) is used to form a potential difference between the gallium nitride gate (204) and the MOS gate (503).

2. The gallium nitride MOS structure for multi-motor cooperative control in a quadruped robot according to claim 1, characterized in that: The buffer layer (201), gallium nitride layer (202), and aluminum gallium nitride layer (203) are arranged sequentially from bottom to top, and the gallium nitride source (205) and gallium nitride drain (206) are located on the left and right sides of the aluminum gallium nitride layer (203), respectively.

3. The gallium nitride MOS structure for multi-motor cooperative control in a quadruped robot according to claim 2, characterized in that: The gallium nitride gate (204) is located above the aluminum gallium nitride layer (203) and close to the gallium nitride source (205), and the P gallium nitride layer (207) is located between the gallium nitride gate (204) and the aluminum gallium nitride layer (203).

4. The gallium nitride MOS structure for multi-motor cooperative control in a quadruped robot according to claim 1, characterized in that: The P-well layer (507) is located on both sides inside the diffusion layer (501). The MOS drain (502) is in ohmic contact with the left P-well layer (507), and the MOS source (504) is in ohmic contact with the right P-well layer (507).

5. The gallium nitride MOS structure for multi-motor cooperative control in a quadruped robot according to claim 4, characterized in that: The MOS gate (503) is located between the MOS drain (502) and the MOS source (504), and the dielectric layer (505) is located below the MOS gate (503).

6. The gallium nitride MOS structure for multi-motor cooperative control in a quadruped robot according to claim 1, characterized in that: An intermediate doped layer (506) is formed in the inner middle region of the diffusion layer (501) by ion implantation, and the bottom end of the intermediate doped layer (506) is in direct contact with the substrate (1).

7. The gallium nitride MOS structure for multi-motor cooperative control in a quadruped robot according to claim 6, characterized in that: An upper doped layer (508) is formed inside the diffusion layer (501) and between the two P-well layers (507) by ion implantation. The upper doped layer (508) is in direct contact with the intermediate doped layer (506).

8. The gallium nitride MOS structure for multi-motor cooperative control in a quadruped robot according to claim 7, characterized in that: Side doped layers (509) are formed inside the diffusion layer (501) and on the left and right sides of the intermediate doped layer (506) by ion implantation. The top of the side doped layer (509) is in direct contact with the upper doped layer (508), and the bottom of the side doped layer (509) is in direct contact with the substrate (1).

9. The gallium nitride MOS structure for multi-motor cooperative control in a quadruped robot according to claim 8, characterized in that: A co-doped layer (208) is formed inside the aluminum gallium nitride layer (203) and on the side close to the gallium nitride layer (202) by co-doping with carbon and iron.

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