Indium tin oxide (ITO)-based broadband metamaterial wave absorber unit and equipment

Abstract

The utility model provides an ITO-based broadband metamaterial wave absorber unit and equipment. The unit comprises a first ITO conductive film layer, a first PET conductive film layer, a first intermediate dielectric plate layer, a second ITO conductive film layer, a second PET conductive film layer, a second intermediate dielectric plate layer and a metal layer which are sequentially arranged from top to bottom. The ITO conducting film layers are square, the first ITO conducting film layer is provided with a first cross-shaped through hole and four third linear through holes, the first cross-shaped through hole penetrates through the four side edges of the first ITO conducting film layer, and the four third linear through holes are located in the four edges of the second square in a one-to-one correspondence mode. Each linear through hole III can penetrate through two adjacent sides of the square I, and an included angle of 45 degrees is formed between the linear through hole III and the side of the ITO conductive film layer; the second ITO conductive film layer is provided with a second cross-shaped through hole covering the diagonal line of the second ITO conductive film layer. According to the utility model, broadband wave absorption and light and thin structure are considered.

Description

TECHNICAL FIELD

[0001] The utility model relates to the field of metamaterial wave absorber, especially to a wideband metamaterial wave absorber unit and equipment based on ITO. BACKGROUND

[0002] Metamaterial, as an innovative three-dimensional artificial composite material, exhibits unique electromagnetic response characteristics compared to natural materials. They are composed of basic units much smaller than the working wavelength arranged in a periodic or non-periodic manner. By carefully designing and optimizing these unit structures, almost any equivalent electromagnetic parameters can be customized, significantly expanding the flexibility and range of electromagnetic wave manipulation. This rich library of electromagnetic properties of metamaterials has shown great potential in realizing cutting-edge applications such as superlenses, electromagnetic invisibility cloaks, and highly efficient wave absorbers.

[0003] Metamaterial wave absorber, as an electromagnetic functional device that can efficiently convert incident electromagnetic wave energy into heat or other forms of energy, has important value for reducing radar cross section and achieving military stealth. Its wave absorption efficiency is mainly rooted in the resonance mechanism of metal structures, but this characteristic often leads to limited wave absorption bandwidth. To overcome this challenge and ensure wave absorption efficiency, researchers usually design multi-resonant structures or use multi-layer metal stacking strategies to widen the wave absorption bandwidth in the microwave frequency band. However, this approach results in a thick metamaterial wave absorber structure, limiting the practical application feasibility.

[0004] As can be seen, it is difficult to achieve wideband wave absorption and thin structure in the prior art. SUMMARY

[0005] The utility model provides a kind of wideband metamaterial wave absorber unit and equipment based on ITO, to give consideration to wideband wave absorption and thin structure, aim at balancing performance and practicality, promote metamaterial wave absorber to more efficient, more convenient application direction.

[0006] According to the first aspect of the utility model, a wideband metamaterial wave absorber unit based on ITO is provided, including first ITO conductive film layer, first PET conductive film layer, first intermediate dielectric plate layer, second ITO conductive film layer, second PET conductive film layer, second intermediate dielectric plate layer and metal layer arranged in order from top to bottom;The shape of the first ITO conductive film layer is a square one with side length b, the first ITO conductive film layer has one cross-shaped through hole one and four straight line type through holes three, the cross-shaped through hole one penetrates the midpoint of the four sides of square one;Four straight line type through holes three are located on the four sides of square two one by one, the included angle between straight line type through hole three and the side of square one is 45°, the length of four straight line type through holes is the same and less than The linear through hole three length direction two ends of the square one are penetrated through the edge; the second ITO conductive film layer is square three, and the second ITO conductive film layer has a cross-shaped through hole two capable of penetrating through four corners of the square three.

[0007] Optionally, the first ITO conductive film layer and the first PET conductive film layer form a first ITO-PET conductive film layer, the second ITO conductive film layer and the second PET conductive film layer form a second ITO-PET conductive film layer, the first ITO-PET conductive film layer is provided with a cross-shaped groove one including the cross-shaped through hole one, the first ITO-PET conductive film layer is provided with a linear groove three including the linear through hole three, and the groove bottoms of the cross-shaped groove one and the linear groove three are the first PET conductive film layer; the second ITO-PET conductive film layer is provided with a cross-shaped groove two including the cross-shaped through hole two, and the groove bottom of the cross-shaped groove two is the second PET conductive film layer.

[0008] Optionally, the length of the square two is equal to the length of the cross-shaped groove one.

[0009] Optionally, the length of the linear groove three is 9-9.2 mm.

[0010] Optionally, the first PET conductive film layer is a rectangle, the length and the width of the first PET conductive film layer are both greater than b, and the distance between the edge of the first ITO conductive film layer and the edge of the first PET conductive film layer is greater than 0.

[0011] Optionally, the first PET conductive film layer is a rectangle, the length and the width of the first PET conductive film layer are both greater than b.

[0012] Optionally, the length of the first PET conductive film layer is 13.2-14 mm, the width of the first PET conductive film layer is 13.2-14 mm, b is 11-11.4 mm, the width of the cross-shaped through hole one is 0.2-0.22 mm, and the width of the linear through hole three is 0.6-0.7 mm.

[0013] Optionally, the length of the second ITO conductive film layer is 11-11.4 mm, and the width of the cross-shaped through hole two is 0.2-0.25 mm.

[0014] Optionally, the first intermediate medium plate layer and the second intermediate medium plate layer are both acrylic plates, the thickness of the acrylic plate is 3-3.02 mm, the dielectric constant of the acrylic plate is 2.25-2.28, and the loss tangent of the acrylic plate is 0.001-0.002.

[0015] Optionally, the thickness of the metal layer is 0.009-0.01 mm.

[0016] Optionally, the first ITO conductive film layer and the first PET conductive film layer form a first ITO-PET conductive film layer, the second ITO conductive film layer and the second PET conductive film layer form a second ITO-PET conductive film layer, and the first ITO-PET conductive film layer and the second ITO-PET conductive film layer each have a resistance of 100Ω.

[0017] Optionally, the square has a side length of b.

[0018] Optionally, the first PET conductive film layer, the first intermediate dielectric plate layer, the second PET conductive film layer, the second intermediate dielectric plate layer, and the metal layer are each square.

[0019] Optionally, the first PET conductive film layer and the second PET conductive film layer each have an equal side length.

[0020] Optionally, the first ITO conductive film layer and the second ITO conductive film layer each are a central symmetric pattern.

[0021] Optionally, the pattern of the first ITO conductive film layer and the pattern of the second ITO conductive film layer each is a pattern that can coincide with itself after being rotated 90° around the center or a pattern that can coincide with itself after being rotated 270° around the center.

[0022] According to a second aspect of the present application, a device based on electromagnetic absorption is provided, characterized by comprising the ITO-based broadband metamaterial wave absorber unit of the first aspect and the optional solutions thereof.

[0023] Optionally, the device is a communication device, a radar device, or a stealth device.

[0024] Compared with the multi-resonance structure or the multi-layer metal stacking strategy of the prior art, the ITO-based broadband metamaterial wave absorber unit and the device provided by the present application have the following advantages: the first ITO conductive film layer, the first PET conductive film layer, the first intermediate dielectric plate layer, the second ITO conductive film layer, the second PET conductive film layer, the second intermediate dielectric plate layer, and the metal layer are sequentially arranged from top to bottom, and the specific structural design of the first ITO conductive film layer and the second ITO conductive film layer, so that the broadband metamaterial wave absorber unit can realize broadband absorption in the microwave frequency band, and the overall structure has a low thickness. BRIEF DESCRIPTION OF DRAWINGS

[0025] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the following will briefly introduce the drawings needed to be used in the embodiments or the prior art description. Obviously, the drawings described below are only some of the embodiments of the present application, and not all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor are within the scope of protection of the present application.

[0026] Figure 1 is a cross-sectional structure schematic diagram of a broadband metamaterial wave absorber unit based on ITO in an embodiment of the present application;

[0027] Figure 2 is a structure schematic diagram of a first ITO-PET conductive film layer in an embodiment of the present application;

[0028] Figure 3 is a structure schematic diagram of a second ITO-PET conductive film layer in an embodiment of the present application;

[0029] Figure 4 is an absorption frequency band and frequency band absorption effect schematic diagram of a broadband metamaterial wave absorber unit based on ITO in an embodiment of the present application;

[0030] Figure 5 is a flow chart of a preparation method of a broadband metamaterial wave absorber unit based on ITO in an embodiment of the present application.

[0031] Explanation of reference signs:

[0032] 10-first ITO conductive film layer, 11-linear through hole one, 12-linear through hole two, 13-linear through hole three;20-first PET conductive film layer;30-first intermediate dielectric plate layer;40-second ITO conductive film layer, 41-cross-shaped through hole two;50-second PET conductive film layer;60-second intermediate dielectric plate layer;70-metal layer. DETAILED DESCRIPTION

[0033] The technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only some of the embodiments of the present application, and not all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor are within the scope of protection of the present application.

[0034] Unless otherwise defined, technical terms or scientific terms used in the present disclosure shall have the ordinary meaning as understood by a person of ordinary skill in the art to which the present disclosure belongs. The terms "first", "second", and similar terms used in the present disclosure do not denote any order, quantity, or importance, but are used to distinguish different components. The terms "comprise", "include", and similar terms mean that the elements or objects before the terms encompass the elements or objects listed after the terms and their equivalents, and do not exclude other elements or objects.

[0035] The technical solutions of the present disclosure will be described in detail below with specific examples. The following specific examples can be combined with each other, and the same or similar concepts or processes may not be described in detail in some examples.

[0036] Please refer to Figure 1 , Figure 2 and Figure 3 The present embodiment provides a kind of wideband metamaterial wave absorber unit based on ITO, for convenience of expression, define Figure 1 The upper side of the above is upper, the left side is left, and the inside is front.

[0037] The wideband metamaterial wave absorber unit based on ITO includes:

[0038] Metal layer 70;

[0039] Second intermediate dielectric plate layer 60 located on metal layer 70;

[0040] Second PET conductive film layer 50 located on second intermediate dielectric plate layer 60;

[0041] Second ITO conductive film layer 40 located on second PET conductive film layer 50;

[0042] First intermediate dielectric plate layer 30 located on second ITO conductive film layer 40;

[0043] First PET conductive film layer 20 located on first intermediate dielectric plate layer 30;

[0044] First ITO conductive film layer 10 located on first PET conductive film layer 20.

[0045] First ITO conductive film layer 10 and first PET conductive film layer 20 constitute first ITO-PET conductive film layer.

[0046] Second ITO conductive film layer 40 and second PET conductive film layer 50 constitute second ITO-PET conductive film layer.

[0047] The first ITO conductive film layer 10 and the second ITO conductive film layer 40 are both square in shape. The first ITO conductive film layer 10 is square in shape when viewed from above, and is referred to as square one with a side length of b. The second ITO conductive film layer 40 is square in shape when viewed from above, and is referred to as square three.

[0048] Please refer to Figure 2 The first ITO conductive film layer 10 has one cross-shaped via one and four straight-line vias three 13. The cross-shaped via one includes a straight-line via one 11 and a straight-line via two 12, which are perpendicular to each other and intersect. Please refer to Figure 3 The second ITO conductive film layer 40 has a cross-shaped via two 41.

[0049] Please refer to Figure 2 The lengths of the straight-line via one 11 and the straight-line via two 12 are equal to the side length b of the first ITO conductive film layer 10. The intersection of the straight-line via one 11 and the straight-line via two 12 is located at the center of square one, that is, the center of the cross-shaped via one coincides with the center of the first ITO conductive film layer 10. The cross-shaped via one penetrates the upper surface, the lower surface, the front side, the back side, the left side and the right side of the first ITO conductive film layer 10.

[0050] Please refer to Figure 2 The four straight-line vias three 13 are located on the four sides of square two one by one. The lengths of the four straight-line vias three 13 are the same and less than That is, each straight-line via three 13 corresponds to and only corresponds to one side of square two. The side length of square two is less than The angle between the side of the square one and the side of the square two is 45°. Both ends of the linear through hole three 13 in the length direction penetrate the side of the square one, that is, each linear through hole three 13 can and only can penetrate two sides of the square one. Obviously, based on the above-mentioned 45° and one-to-one limitation on the four sides of the square two, the two sides of the square penetrated by different linear through holes three 13 are not the same or not completely the same, and in the square one, each adjacent two sides correspond to a linear through hole three 13. The four linear through holes three 13 are respectively called first linear through hole three, second linear through hole three, third linear through hole three and fourth linear through hole three. The first linear through hole three penetrates the front side and the left side of the square one, the second linear through hole three penetrates the front side and the right side of the square one, the third linear through hole three penetrates the right side and the back side of the square one, and the fourth linear through hole three penetrates the back side and the left side of the square one. It can be understood that the centers of the square one, the square two and the cross-shaped through hole one coincide (the center is located on the same vertical axis). It can be understood that the square two is only for the convenience of description and the manufacture of the linear through hole three 13, and is not the shape of the square two of any structure.

[0051] Please refer again to Figure 3 The cross-shaped through hole two 41 (the cross-shaped through hole on the second ITO conductive film layer 40) covers the diagonal of the second ITO conductive film layer 40, that is, the diagonal of the cross-shaped through hole two 41 and the positive direction three coincide, the cross-shaped through hole two 41 penetrates the four right angles of the square three of the second ITO conductive film layer 40, and the cross-shaped through hole two 41 includes a linear through hole four and a linear through hole five, which are perpendicular and intersected, the linear through hole four penetrates two right angles (located on one diagonal) of the second ITO conductive film layer 40, and the linear through hole five penetrates the other two right angles (located on the other diagonal) of the second ITO conductive film layer 40.

[0052] In specific schemes, the first PET conductive film layer 20 is rectangular, that is, the shape of the top view is rectangular, the length and width of the rectangle are both greater than b, the distance between the edge of the first ITO conductive film layer 10 and the edge of the first PET conductive film layer 20 is greater than 0, and each edge of the first ITO conductive film layer 10 does not coincide with the edge of the first PET conductive film layer 20. Usually, the center of the first PET conductive film layer 20 and the center of the first ITO conductive film layer 10 are located on the same vertical axis. Usually, the shape of the first PET conductive film layer 20 is square, and the side length is a.

[0053] In a specific embodiment, the second ITO-PET conductive film layer has a side length of a. In this embodiment, the second PET conductive film layer 50 is a rectangle, usually a square, and the centers of the second PET conductive film layer 50 and the second ITO conductive film layer 40 are on the same vertical axis and have the same side length. In this embodiment, the side length of the second PET conductive film layer 50 is a, the side length of the second ITO conductive film layer 40 is b, and the centers of the second ITO conductive film layer 40 and the second PET conductive film layer 50 are on the same vertical axis.

[0054] In a specific embodiment, the first PET conductive film layer 20, the first intermediate medium plate layer 30, the second PET conductive film layer 50, the second intermediate medium plate layer 60, and the metal layer 70 are all squares in plan view. In particular, the first PET conductive film layer 20 and the second PET conductive film layer 50 have the same side length.

[0055] It should be understood that the through holes described herein refer to through holes that pass through the upper and lower surfaces of the ITO conductive film layer. The cross-shaped through hole one 13 and the linear through hole three 13 pass through the upper and lower surfaces of the first ITO conductive film layer 10, and the cross-shaped through hole two 41 passes through the upper and lower surfaces of the second ITO conductive film layer 40. It should be understood that the linear and cross-shaped described herein are the patterns shown in plan view.

[0056] The plan view patterns of the first ITO conductive film layer 10 and the second ITO conductive film layer 40 are center-symmetric patterns. In particular, the first ITO conductive film layer 10 and the second ITO conductive film layer 40 each have four axes of symmetry. The pattern of the first ITO conductive film layer 10 and the pattern of the second ITO conductive film layer 40 can coincide with themselves when rotated 90°, 180°, and 270° around the center (clockwise rotation).

[0057] It can be understood that: the first ITO-PET conductive film layer is dug with a cross-shaped groove one, and the groove bottom of the cross-shaped groove one is the first PET conductive film layer 20. The cross-shaped groove one includes a cross-shaped via one. The cross-shaped groove one includes a linear groove one and a linear groove two, which are perpendicular to each other and intersect at the center of the first ITO conductive film layer 10; preferably, the lengths of the linear groove one and the linear groove two are equal, that is, the length and width of the cross-shaped groove one are equal. The first ITO-PET conductive film layer is dug with four linear grooves three, one of which corresponds to each of the four sides of the square two, and the linear groove three includes a linear via three 13, and the groove bottom of the linear groove three is the first PET conductive film layer 20. The second ITO-PET conductive film layer is dug with a cross-shaped groove two, and the groove bottom of the cross-shaped groove two is the second PET conductive film layer 50. The cross-shaped groove two includes a cross-shaped via two 41, and the cross-shaped groove two includes a linear groove four and a linear groove five. Generally, the width of all the grooves in this paragraph is not greater than the corresponding via width, only the length is greater than the corresponding via. As a preferred embodiment, the side length of the square two is equal to the length of the linear groove one. Through the design that the side length of the square two is equal to the length of the linear groove one, the absorption performance of the wave absorber unit is further improved.

[0058] In a specific embodiment, the first PET conductive film layer 20 has a length of 13.2-14 mm and a width of 13.2-14 mm, and further, the first PET conductive film layer 20 has a side length of 13.2-14 mm; the first ITO conductive film layer 10 has a side length of 11-11.4 mm, and the length c of the cross-shaped groove I excavated in the first ITO-PET conductive film layer is 12-12.2 mm (the length of the straight-line-shaped groove I and the straight-line-shaped groove II), and the width e is 0.2-0.22 mm (the width of the straight-line-shaped groove I and the straight-line-shaped groove II). It can be understood that such a design is to ensure that the cross-shaped via I and the straight-line-shaped via II 12 transversely penetrate the first ITO conductive film layer 10, and a part of the PET conductive film layer can be excavated to expose the first PET conductive film layer 20, and other vias are the same. The straight-line-shaped groove III has a length f of 9-9.2 mm and a width d of 0.6-0.7 mm; the second ITO conductive film layer 40 has a side length of 11-11.4 mm, and the cross-shaped via II 41 on the second ITO conductive film layer 40 has a hole width k of 0.2-0.25 mm (the width of the straight-line-shaped groove IV and the straight-line-shaped groove V), and the cross-shaped groove II has a length g of 19-19.2 mm (the length of the straight-line-shaped groove IV and the straight-line-shaped groove V). The first intermediate medium plate layer 30 and the second intermediate medium plate layer 60 are acrylic plates, and the thickness h1 of the first intermediate medium plate layer 30 and the second intermediate medium plate layer 60 is 3-3.02 mm, the dielectric constant is 2.25-2.28, and the loss tangent is 0.001-0.002. The thickness h2 of the metal layer 70 for grounding is 0.009-0.01 mm.

[0059] Further, as a preferred scheme, the first PET conductive film layer 20 has a side length a of 13.6 mm, the first ITO conductive film layer 10 has a side length b of 11 mm, the excavated cross-shaped groove I has a length c of 12 mm and a width e of 0.2 mm; the four straight-line-shaped grooves III corresponding to the center point rotated 45-degree square II are rectangular with a length f of 9 mm and a width d of 0.6 mm; the second ITO conductive film has a side length of 11 mm, and the groove width k of the cross-shaped groove II excavated in the second ITO-PET conductive film layer around the center point rotated 45 degrees is 0.2 mm, and the length g of the cross-shaped groove II is 19 mm; the thickness of the acrylic plate is 3 mm, the dielectric constant is 2.25, and the loss tangent is 0.001; and the thickness h2 of the metal layer 70 is 0.01 mm.

[0060] In other preferred embodiments, the side length of the square II is equal to the side length of the square I. The straight-line-shaped via III 13 is about Through the design that the side length of the square II is equal to the side length of the square I, the absorption performance of the wave absorber unit is further improved.

[0061] In a specific solution, the first ITO-PET conductive film layer has a resistance of 100Ω.

[0062] The ITO-based broadband metamaterial wave absorber unit provided in any of the above solutions realizes broadband absorption by adopting an ITO conductive film layer, guarantees the wave absorption efficiency, and realizes broadband absorption of the wave absorber unit in a frequency range of 3.9GHz-12GHz by the hierarchical structure of the first ITO conductive film layer 10, the first PET conductive film layer 20, the first intermediate dielectric plate layer 30, the second ITO conductive film layer 40, the second PET conductive film layer 50, the second intermediate dielectric plate layer 60, and the metal layer 70 arranged in sequence from top to bottom, and the specific structural design of the first ITO conductive film layer 10 and the second ITO conductive film layer 40. Compared with the multi-resonant structure or the multi-layer metal stacking strategy of the prior art, the overall structure of the wave absorber unit designed based on the ITO conductive film layer only has a structure of 2 ITO-PET-intermediate dielectrics, so that the absorption intensity is not lower than that of the prior art while the overall thickness is lighter. The ITO-based broadband metamaterial wave absorber unit of the embodiment takes into account the microwave frequency band absorption intensity and the lighter structure, and promotes the application of the metamaterial wave absorber to a more efficient and more convenient direction.

[0063] Please refer to Figure 4 , which provides a schematic diagram of the microwave frequency band absorption effect of the ITO-based broadband metamaterial wave absorber unit. As can be seen, the microwave frequency band realizes broadband absorption and can guarantee the wave absorption efficiency.

[0064] The ITO-based broadband metamaterial wave absorber unit of the embodiment realizes impedance optimization, broadens the absorption frequency band, and improves the wave absorption performance of the material.

[0065] The equipment based on electromagnetic absorption of the embodiment includes the ITO-based broadband metamaterial wave absorber unit.

[0066] In an embodiment, the equipment is a satellite equipment used in the field of satellites.

[0067] In another embodiment, the equipment is a communication equipment used in the field of wireless communication.

[0068] In still another embodiment, the equipment is a radar equipment used in the field of radars.

[0069] In still another embodiment, the equipment is a stealth equipment used in the field of stealth technology, for example, as a public electromagnetic stealth cloak.

[0070] It can be understood that the above is only an example, not a limitation, and the device can also be used as a solar energy collection device, a sensor device, an optoelectronic device, an efficient wave absorption device, etc.

[0071] Please refer to Figure 5 The embodiment of the utility model provides a preparation method of the ITO-based broadband metamaterial wave absorber unit, and the method comprises the following steps:

[0072] S1, obtaining a metal layer 70;

[0073] S2, preparing a second intermediate dielectric plate layer 60 on the metal layer 70;

[0074] S3, plating a second PET conductive film layer 50 on the second intermediate dielectric plate layer 60;

[0075] S4, plating a second basic ITO conductive film layer on the second PET conductive film layer 50, and the shape of the second basic ITO conductive film layer is a square (square three);

[0076] S5, preparing a cross-shaped via two 41 on the second basic ITO conductive film layer to obtain a second ITO conductive film layer 40, and the cross-shaped via two 41 can penetrate through four corners of the square three (second basic ITO conductive film layer);

[0077] S6, preparing a first intermediate dielectric plate layer 30 on the second ITO conductive film layer 40;

[0078] S7, plating a first PET conductive film layer 20 on the first intermediate dielectric plate layer 30;

[0079] S8, plating a first basic ITO conductive film layer on the first PET conductive film layer 20, and the shape of the first basic ITO conductive film layer is a square (square one) with a side length of b;

[0080] S9, preparing a cross-shaped via one (a linear via one 11 and a linear via two 12) and four linear via threes 13 on the first basic ITO conductive film layer to obtain a first ITO conductive film layer 10, the cross-shaped via one penetrates through the midpoints of four sides of the square one, that is, the lengths of the linear via one 11 and the linear via two 12 are both b, the linear via one 11 is perpendicular to the linear via two 12, and the intersection point of the linear via one 11 and the linear via two 12 is located at the center of the square one, and the four linear via threes 13 are located on the four sides of the square two one by one, the lengths of the four linear via threes are the same and are smaller than b, and the linear via threes are arranged in a staggered manner. The linear through hole three 13 penetrates two edges of the square one, and the angle between the linear through hole three 13 and the edge of the square one is 45 degrees. That is, the first ITO conductive film layer 10 is provided with a linear through hole three 13 capable of penetrating every two adjacent edges, the four linear through holes three 13 have the same length, any two linear through holes three 13 do not intersect, and the angle between the linear through hole three 13 and the edge of the first ITO conductive film layer 10 is 45 degrees.

[0081] The preparation of the through hole can not only remove the ITO conductive film layer, but also remove a thin layer of PET conductive film layer, and it is necessary to ensure that the intermediate medium plate layer is not exposed. The preparation method of the through hole is etching.

[0082] The ITO-based wideband metamaterial wave absorber unit has the advantages of simple processing and easy preparation, and can be realized only by etching a simple ITO conductive film pattern, and is easy to prepare and process in the microwave frequency band.

[0083] The preparation method of the ITO-based wideband metamaterial wave absorber unit can be used as a communication device, a radar device or a stealth device.

[0084] As can be seen from the above, compared with the multi-resonant structure or the multi-layer metal stacking strategy of the prior art, the ITO-based wideband metamaterial wave absorber unit and the device based on electromagnetic absorption provided by the utility model have only two ITO-PET conductive structures, and the first ITO conductive film layer 10 and the second ITO conductive film layer 40 are designed in a structure, so that the wideband metamaterial wave absorber unit can realize wideband absorption in the microwave frequency band and ensure that the absorption rate is not low with fewer ITO conductive film layers. Due to the two-layer resonant structure, the overall structure has a low thickness, and the microwave frequency band wideband wave absorption (absorbing electromagnetic waves with a frequency range of 3.9GHz-12GHz), high-efficiency absorption (not lower than the absorption rate of the multi-resonant structure or the multi-layer metal stacking strategy), and a light and thin structure (the thickness is lower than that of the multi-resonant structure or the multi-layer metal stacking strategy) are taken into account. The performance and practicability are taken into account, and the application of the metamaterial wave absorber is promoted to a more efficient and more convenient direction.

[0085] Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the utility model, but not to limit them; although the utility model has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that they can still modify the technical solutions recorded in the foregoing embodiments, or make equivalent replacement for part or all of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the utility model.

Claims

1. An ITO-based broadband metamaterial absorber unit, characterized in that, The first ITO conductive film layer, the first PET conductive film layer, the first intermediate dielectric plate layer, the second ITO conductive film layer, the second PET conductive film layer, the second intermediate dielectric plate layer and the metal layer are sequentially arranged from top to bottom; the first ITO conductive film layer is in the shape of a square with a side length of b; the first ITO conductive film layer has one cross-shaped through hole I and four straight-line-shaped through holes III; the cross-shaped through hole I penetrates the midpoints of the four sides of the square; the four straight-line-shaped through holes III are located on the four sides of the square II in pairs; the angle between the straight-line-shaped through hole III and the side of the square I is 45°; the lengths of the four straight-line-shaped through holes are the same and less than 2b / 2; the two ends of the straight-line-shaped through hole III in the length direction both penetrate the side of the square I; the second ITO conductive film layer is in the shape of a square III; the second ITO conductive film layer has a cross-shaped through hole II which can penetrate the four corners of the square III.

2. The ITO-based broadband metamaterial wave absorber unit of claim 1, wherein, The first ITO conductive film layer and the first PET conductive film layer constitute a first ITO-PET conductive film layer; the second ITO conductive film layer and the second PET conductive film layer constitute a second ITO-PET conductive film layer; the first ITO-PET conductive film layer is provided with a cross-shaped groove I including the cross-shaped through hole I; the first ITO-PET conductive film layer is provided with a straight-line-shaped groove III including the straight-line-shaped through hole III; the groove bottoms of the cross-shaped groove I and the straight-line-shaped groove III are both the first PET conductive film layer; the second ITO-PET conductive film layer is provided with a cross-shaped groove II including the cross-shaped through hole II; the groove bottom of the cross-shaped groove II is the second PET conductive film layer.

3. The ITO-based broadband metamaterial wave absorber unit of claim 2, wherein, The side length of the square II is equal to the length of the cross-shaped groove I.

4. The ITO-based broadband metamaterial wave absorber unit of claim 2, wherein, The length of the straight-line-shaped groove III is 9-9.2 mm.

5. The ITO-based broadband metamaterial wave absorber unit of claim 1, wherein, The first PET conductive film layer is a rectangle with a length and a width both greater than b; the distance between the edge of the first ITO conductive film layer and the edge of the first PET conductive film layer is greater than 0.

6. The ITO-based broadband metamaterial wave absorber unit of claim 1, wherein, The first PET conductive film layer is a rectangle with a length and a width both greater than b.

7. The ITO-based broadband metamaterial wave absorber unit of claim 6, wherein, The length of the first PET conductive film layer is 13.2-14 mm and the width is 13.2-14 mm; b is 11-11.4 mm; the width of the cross-shaped through hole I is 0.2-0.22 mm; the width of the straight-line-shaped through hole III is 0.6-0.7 mm.

8. The ITO-based broadband metamaterial wave absorber unit of claim 7, wherein, The side length of the second ITO conductive film layer is 11-11.4 mm and the width of the cross-shaped through hole II is 0.2-0.25 mm.

9. The ITO-based broadband metamaterial wave absorber unit of claim 8, wherein, The first intermediate dielectric plate layer and the second intermediate dielectric plate layer are both acrylic plates; the thickness of the acrylic plate is 3-3.02 mm; the dielectric constant is 2.25-2.28; the loss tangent is 0.001-0.

002.

10. The ITO-based broadband metamaterial wave absorber unit of claim 9, wherein, The thickness of the metal layer is 0.009-0.01 mm.

11. The ITO-based broadband metamaterial wave absorber unit of claim 1, wherein, The first ITO conductive film layer and the first PET conductive film layer constitute a first ITO-PET conductive film layer; the second ITO conductive film layer and the second PET conductive film layer constitute a second ITO-PET conductive film layer; the resistances of the first ITO-PET conductive film layer and the second ITO-PET conductive film layer are both 100 Ω.

12. The ITO-based broadband metamaterial wave absorber unit of claim 1, wherein, The side length of the square II is b.

13. The ITO-based broadband metamaterial wave absorber unit of claim 1, wherein, The first PET conductive film layer, the first intermediate dielectric plate layer, the second PET conductive film layer, the second intermediate dielectric plate layer and the metal layer are all square.

14. The ITO-based broadband metamaterial wave absorber unit of claim 13, wherein, The first PET conductive film layer and the second PET conductive film layer are equal in side length.

15. The ITO-based broadband metamaterial wave absorber unit of claim 1, wherein, The first ITO conductive film layer and the second ITO conductive film layer are both center-symmetrical patterns.

16. The ITO-based broadband metamaterial wave absorber unit of claim 11, wherein, The pattern of the first ITO conductive film layer and the pattern of the second ITO conductive film layer are both patterns that can coincide with themselves after rotating 90° around the center, and are both patterns that can coincide with themselves after rotating 270° around the center.

17. An electromagnetic absorption based device, characterized by, An ITO-based broadband metamaterial wave absorber unit according to any one of claims 1 to 16.

18. A device based on electromagnetic absorption according to claim 17, characterized in that, The device is a communication device, a radar device or a stealth device.

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