Chip structure for preventing short circuit of solid crystal elargol

By introducing a silicon substrate, aluminum conductive layer, silicon dioxide dielectric layer and protective layer into the chip structure, combined with tapered holes and barrier layers, the problem of short circuits in the die-bonded silver paste was solved, and the reliability and security of the chip's electrical connection and signal transmission were achieved.

CN223693130UActive Publication Date: 2025-12-19NANTONG MUZHIXIANG TECHNOLOGY CO LTD
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Patent Information

Application Number
CN202422709433.6
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2024-11-07
Publication Date
2025-12-19
Estimated Expiration
2034-11-07

AI Technical Summary

Technical Problem

The die-bonding silver paste can easily cause short circuits in chips during the curing process, and existing technologies are unable to effectively prevent this problem.

Method used

The design employs a silicon substrate layer, an aluminum conductor layer, a dielectric layer, and a protective layer, combined with tapered holes and a barrier layer to prevent silver paste from accumulating and penetrating between the pins. Insulation and protection are achieved through silicon dioxide and polytetrafluoroethylene materials.

Benefits of technology

It effectively prevents short circuits in the die-bonded silver paste, ensures the electrical connection and signal transmission of the chip, reduces the risk of silver paste buildup, and improves the reliability and safety of the chip.

✦ Generated by Eureka AI based on patent content.

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Abstract

The utility model discloses a chip structure for preventing solid crystal elargol short circuit, which comprises a bottom plate, a heat dissipation mechanism and a packaging mechanism, a substrate layer adopts a silicon substrate and can provide support and electrical connection of a chip, and a lead layer is used for manufacturing a lead circuit on the substrate layer, adopts an aluminum material and is used for current transmission and signal connection. According to the dielectric layer, a layer of dielectric material is arranged above the wire layer, the dielectric material is silicon dioxide and plays a role in isolation and insulation, short circuit between wires is prevented, and a layer of polytetrafluoroethylene is added above the dielectric layer and used for preventing solid crystal elargol from gathering on the surface of a chip and forming short circuit. The protective layer covers a film on the surface of the chip to prevent the solid crystal elargol from directly contacting with the pins of the chip, and the plurality of conical holes at the upper end of the protective layer are used for guiding the solid crystal elargol to flow, so that the risks of accumulation and short circuit of the elargol among the pins can be reduced.
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Description

TECHNICAL FIELD

[0001] The utility model relates to the technical field of short circuit prevention, and specifically relates to a chip structure preventing short circuit of fixed crystal silver glue. BACKGROUND

[0002] Integrated circuit (IC) is a kind of circuit miniaturization mode in electronics, mainly including semiconductor devices, also including passive components, etc., and is often manufactured on the surface of semiconductor wafer.

[0003] Fixed crystal silver glue is a kind of material for chip packaging and connection, which has conductivity and insulation performance. In the chip manufacturing process, fixed crystal silver glue is used to connect the circuit between chip pins and packaging substrate. However, if there is a problem in the solidification of fixed crystal silver glue, short circuit may occur. Therefore, the skilled in the art provides a chip structure preventing short circuit of fixed crystal silver glue to solve the problems raised in the above background. SUMMARY

[0004] The utility model aims at providing a kind of chip structure preventing short circuit of fixed crystal silver glue to solve the problems raised in the above background.

[0005] To achieve the above object, the utility model provides the following technical scheme:

[0006] A kind of chip structure preventing short circuit of fixed crystal silver glue, including bottom plate, heat dissipation mechanism and encapsulation mechanism, the bottom plate bottom end is provided with heat dissipation mechanism, bottom plate upper end surface is provided with base layer, base layer upper end is provided with encapsulation mechanism.

[0007] As a further scheme of the utility model: the bottom plate inner central position is provided with air-permeable plate, and the bottom plate bottom end is provided with fin.

[0008] As a further scheme of the utility model: the base layer upper end is provided with wire layer, the wire layer upper end is provided with dielectric layer, the dielectric layer upper end is provided with chip body, the chip body upper end is provided with multiple pins, the pin is connected with the dielectric layer upper end surface, and the chip body upper end is provided with protective layer.

[0009] As a further scheme of the utility model: multiple tapered holes are arranged in the protective layer, and the protective layer lower end surface left and right ends are provided with blocking layer, the blocking layer is movably connected with the chip body, the bottom plate upper end surface is provided with encapsulation shell, and the encapsulation shell upper end surface is provided with transparent sheet.

[0010] As a further scheme of the utility model: the substrate layer adopts silicon substrate, the wire layer adopts aluminum material, the dielectric layer adopts silicon dioxide material, and the upper end face of the dielectric layer is coated with polytetrafluoroethylene.

[0011] Compared with the prior art, the utility model has the advantages that the substrate layer adopts silicon substrate, can provide the support and electrical connection of the chip, the wire layer is used to make the wire circuit on the substrate layer, adopts aluminum material, is used for current transmission and signal connection, the dielectric layer is provided with a layer of dielectric material above the wire layer, the dielectric material is silicon dioxide, plays the role of isolation and insulation, prevents the short circuit between the wires, and a layer of polytetrafluoroethylene is added above the dielectric layer, is used to prevent the agglomeration and short circuit of the die bonding silver adhesive on the chip surface, the protective layer is used as the protective layer to the chip surface covering film, prevents the die bonding silver adhesive from directly contacting with the chip pin, the multiple tapered holes on the upper end of the protective layer are used to guide the flow of the die bonding silver adhesive, can reduce the risk of accumulation and short circuit of the silver adhesive between the pins, the blocking layer is located between the protective layer and the silver adhesive, is used to block the penetration of the die bonding silver adhesive into the gap between the chip pins, the blocking layer adopts tungsten material, thereby protecting the chip and preventing short circuit, the utility model relates to a kind of chip structure for preventing die bonding silver adhesive short circuit, and the utility model is simple and reasonable in structure, and convenient and fast to operate. BRIEF DESCRIPTION OF DRAWINGS

[0012] Fig. 1 It is a kind of chip structure for preventing die bonding silver adhesive short circuit structure schematic view.

[0013] Fig. 2 It is a kind of chip structure for preventing die bonding silver adhesive short circuit explosion structure schematic view.

[0014] Fig. 3 It is a kind of chip structure for preventing die bonding silver adhesive short circuit A place amplification structure schematic view.

[0015] Fig. 4 It is a kind of chip structure for preventing die bonding silver adhesive short circuit B place amplification structure schematic view.

[0016] In the drawing: 1-bottom plate, 2-radiator, 3-encapsulation shell, 4-transparent sheet, 5-air permeable plate, 6-chip body, 7-pin, 8-substrate layer, 9-wire layer, 10-dielectric layer, 11-protective layer, 12-blocking layer, 13-tapered hole. DETAILED DESCRIPTION

[0017] In order to make the technical means, creation features, purposes and effects of the utility model easy to understand, the utility model is further described below in combination with specific embodiments. In the description of the utility model, it should be noted that the positions or location relationships indicated by the terms "upper", "lower", "inner", "outer", "front end", "rear end", "two ends", "one end" and "the other end" are based on the positions or location relationships shown in the drawings, and are only for the convenience of describing the utility model and simplifying the description, and therefore cannot be understood as limiting the utility model. In addition, the terms "first" and "second" are only for the purpose of description, and cannot be understood as indicating or implying relative importance. In the description of the utility model, it should be noted that, unless otherwise explicitly specified and limited, the terms "mounting", "provided with", "connection" and the like should be understood in a broad sense, for example, "connection" can be fixed connection, can also be detachable connection, or integral connection; can be mechanical connection, can also be electrical connection; can be direct connection, can also be indirect connection through an intermediate medium, and can be internal communication of two elements. For ordinary skilled persons in the art, the specific meanings of the above terms in the utility model can be understood according to specific circumstances.

[0018] Please refer to Figs. 1-4 In the utility model embodiment, a chip structure for preventing short circuit of die bonding silver adhesive comprises a bottom plate 1, a heat dissipation fin 2, a packaging shell 3, a transparent sheet 4, a breathable plate 5, a chip body 6, a pin 7, a substrate layer 8, a wire layer 9, a dielectric layer 10, a protective layer 11, a barrier layer 12 and a tapered hole 13. The bottom plate 1 is provided with a heat dissipation mechanism at the bottom end, the bottom plate 1 is provided with the substrate layer 8 at the upper end, the substrate layer 8 is provided with a packaging mechanism at the upper end, the bottom plate 1 is provided with the breathable plate 5 at the inner central position, the bottom plate 1 is provided with the heat dissipation fin 2 at the bottom end, the substrate layer 8 is provided with the wire layer 9 at the upper end, the wire layer 9 is provided with the dielectric layer 10 at the upper end, the dielectric layer 10 is provided with the chip body 6 at the upper end, the chip body 6 is provided with a plurality of pins 7 at the upper end, the pins 7 are connected with the upper end surface of the dielectric layer 10, the chip body 6 is provided with the protective layer 11 at the upper end, the protective layer 11 is provided with a plurality of tapered holes 13, the protective layer 11 is provided with the barrier layer 12 at the lower end surface, the barrier layer 12 is movably connected with the chip body 6, the bottom plate 1 is provided with the packaging shell 3 at the upper end surface, the packaging shell 3 is provided with the transparent sheet 4 at the upper end surface, the substrate layer 8 is made of silicon substrate, the wire layer 9 is made of aluminum material, the dielectric layer 10 is made of silicon dioxide material, and the upper end surface of the dielectric layer 10 is coated with polytetrafluoroethylene.

[0019] The working principle of the utility model is: the base layer adopts silicon base, can provide the support and electrical connection of chip, the wire layer makes wire circuit on the base layer, adopts aluminum material, is used for current transmission and signal connection, the dielectric layer sets a layer of dielectric material above the wire layer, the dielectric material is silicon dioxide, plays the role of isolation and insulation, prevents the short circuit between wires, and adds a layer of polytetrafluoroethylene above the dielectric layer, is used for preventing the fixed crystal silver glue gathers and forms short circuit on the chip surface, the protective layer covers the film on the chip surface as the protective layer, to prevent the fixed crystal silver glue directly with chip pin contact, the multiple tapered holes of protective layer upper end, for guiding the fixed crystal silver glue flow, can reduce the risk of accumulation and short circuit of silver glue between pins, the blocking layer is located between the protective layer and silver glue, is used for blocking the fixed crystal silver glue penetration into the gap between chip pins, the blocking layer adopts material as tungsten, thereby protecting the chip, prevents short circuit, the utility model relates to a kind of chip structure of preventing fixed crystal silver glue short circuit, the utility model is simple and reasonable in structure, and it is easy and fast to operate when using.

[0020] It is apparent to those skilled in the art that the present application is not limited to the details of the foregoing exemplary embodiments, and that the present application can be implemented in other particular forms without departing from the spirit or essential characteristics of the present application. Therefore, the embodiments should be considered in all respects as illustrative and not restrictive, and the scope of the present application should be defined by the appended claims rather than the above description, and it is intended to include all changes falling within the meaning and range of equivalents of the elements of the claims. Any reference signs in the claims should not be construed as limiting the claims to the figures in which the reference signs are used.

[0021] In addition, it should be understood that, although the present specification is described in terms of embodiments, not every embodiment contains only one independent technical solution, and the description of the specification is only for the sake of clarity, and those skilled in the art should consider the specification as a whole, and the technical solutions in each embodiment can be combined appropriately to form other embodiments that those skilled in the art can understand.

Claims

1. A chip structure for preventing short circuit of silver glue for die bonding, comprising a bottom plate (1), a heat dissipation mechanism and a packaging mechanism, characterized in that, The bottom plate (1) is provided with a heat dissipation mechanism at the bottom end, and the upper end surface of the bottom plate (1) is provided with a base layer (8), and the upper end of the base layer (8) is provided with a packaging mechanism; The packaging mechanism comprises a packaging shell (3), a transparent sheet (4), a breathable plate (5), a chip body (6), a pin (7), a wire layer (9), a dielectric layer (10), a protective layer (11), a barrier layer (12) and a tapered hole (13), the upper end of the base layer (8) is provided with a wire layer (9), the upper end of the wire layer (9) is provided with a dielectric layer (10), and the upper end of the dielectric layer (10) is provided with a chip body (6).

2. The chip structure of claim 1, wherein the silver paste is prevented from short-circuiting. The heat dissipation mechanism comprises a heat dissipation fin (2) and a breathable plate (5), the breathable plate (5) is arranged at the inner center of the bottom plate (1), and the heat dissipation fin (2) is arranged at the bottom end of the bottom plate (1).

3. The chip structure of claim 1, wherein the silver paste is prevented from short-circuiting. The upper end of the chip body (6) is provided with a plurality of pins (7), the pins (7) are connected with the upper end surface of the dielectric layer (10), and the upper end of the chip body (6) is provided with a protective layer (11).

4. The chip structure of claim 3, wherein the silver paste is prevented from short-circuiting. A plurality of tapered holes (13) are arranged in the protective layer (11), the lower end surface of the protective layer (11) is provided with a barrier layer (12) at both ends, and the barrier layer (12) is movably connected with the chip body (6).

5. The chip structure of claim 1, wherein the silver paste is prevented from short-circuiting. The upper end surface of the bottom plate (1) is provided with a packaging shell (3), and the upper end surface of the packaging shell (3) is provided with a transparent sheet (4).

6. The chip structure of claim 1, wherein the silver paste is prevented from short-circuiting. The base layer (8) is made of silicon, the wire layer (9) is made of aluminum, the dielectric layer (10) is made of silicon dioxide, and the upper end surface of the dielectric layer (10) is coated with polytetrafluoroethylene.