Germanium single crystal furnace gas shunting device
By using a combination of a base plate and a flow distribution component in a germanium single crystal furnace, multi-directional introduction and circumferential flow of inert gas are achieved, solving the problem of tungsten wire rope swaying caused by uneven airflow and improving the stability and quality of single crystal growth.
Patent Information
- Application Number
- CN202520200927.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-02-10
- Publication Date
- 2025-12-23
- Estimated Expiration
- 2035-02-10
AI Technical Summary
In existing germanium single crystal furnaces, uneven airflow during the gas filling process causes the tungsten wire rope to sway, affecting the verticality and horizontality of single crystal growth and making it difficult to maintain a stable single crystal growth environment.
The system combines a base plate with a flow divider assembly. Inert gas is introduced from multiple directions, and the flow divider assembly distributes the gas flow twice in a circular direction, so that the gas flow is sprayed into the sub-chamber in an annular spray form, avoiding contact with the tungsten wire rope and ensuring the stability of the single crystal growth environment.
This improved the verticality and horizontality of single crystal growth, ensuring single crystal quality, avoiding the impact of airflow on the tungsten wire rope, and maintaining the stability of single crystal growth.
Smart Images
Figure CN223705820U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The utility model relates to the gas shunting technical field of germanium single crystal furnace especially relates to a germanium single crystal furnace gas shunting device. BACKGROUND
[0002] Germanium single crystal furnace is a kind of equipment specially used for growing germanium single crystal, and the working principle of germanium single crystal furnace is based on the Czochralski method. In this method, germanium raw materials are placed in a graphite crucible and then heated to melting under the protection of inert gas (such as nitrogen or helium). Then a seed crystal is used to guide the crystallization of the melt, and by controlling the temperature and pulling speed, single crystal germanium is gradually formed.
[0003] When germanium single crystal furnace is used to pull single crystal, after the dirty material is extracted from the secondary chamber, the secondary chamber needs to be evacuated and filled with inert gas to achieve a micro-positive pressure atmosphere with the same pressure as the furnace chamber. However, for the structure of the existing germanium single crystal furnace, if the inert gas is directly introduced into the secondary chamber from the gas charging nozzle, a single gas flow will enter the secondary chamber from a certain direction, which will cause the tungsten wire rope to swing and thus cause the single crystal to swing, which is not conducive to the pulling of single crystal and makes it difficult to maintain the stability of the single crystal growth environment, reducing the verticality and horizontality of crystal growth.
[0004] Therefore, the inert gas from a single direction affects the single crystal growth environment due to uneven gas flow, reducing the verticality and horizontality of crystal growth. SUMMARY
[0005] To solve the above technical problems, the utility model provides a germanium single crystal furnace gas shunting device, which introduces inert gas into the secondary chamber from multiple directions by combining the bottom plate with the shunting assembly.
[0006] To achieve the above purpose, the utility model is realized by the following technical solutions:
[0007] A germanium single crystal furnace gas shunting device, comprising:
[0008] A bottom plate is arranged at the bottom of the pulling head of the germanium single crystal furnace and is detachably connected with the pulling head and the gas charging nozzle on the germanium single crystal furnace.
[0009] A shunting assembly is arranged on the bottom plate between the bottom plate and the secondary chamber of the germanium single crystal furnace and is detachably connected with the bottom plate, and is used to evenly divide the gas flow of inert gas in the circumferential direction.
[0010] Compared with the prior art, the utility model has the following advantages:
[0011] The gas inlet is connected to the shunt assembly through the bottom plate, the shunt assembly evenly distributes the inert gas twice in the circumferential direction, and finally sprays the gas flow to the outside of the tungsten wire rope in the sub-chamber in the form of a ring-shaped spray, avoiding the contact between the gas flow and the tungsten wire rope to cause the swing of the tungsten wire rope, ensuring the stability of the single crystal growth environment, enabling the single crystal to be smoothly drawn, improving the verticality and horizontality of the crystal growth, and improving the quality of the single crystal.
[0012] Further preferably, the shunt assembly comprises:
[0013] The shunt cover is arranged on the bottom plate and abuts against the bottom surface of the bottom plate, the outlet of the shunt cover is located in the sub-chamber, the tungsten wire rope inside the germanium single crystal furnace passes through the shunt cover, and the shunt cover is used for evenly distributing the gas flow of the inert gas on the annular circumferential surface.
[0014] The connecting disc is arranged between the bottom plate and the sub-chamber, the top surface of the connecting disc is screwed with the bottom plate, and the bottom surface of the connecting disc is connected with the germanium single crystal furnace. The shunt cover is located in the connecting disc and is adapted to the connecting disc.
[0015] By adopting the above technical scheme, the inert gas enters the shunt cover through the gas inlet and the bottom plate, is evenly shunted into the sub-chamber, maintains the micro-positive pressure of the sub-chamber, the gas flow is sprayed towards the inner wall of the sub-chamber in a circumferential manner, avoiding contact with the tungsten wire rope, and the connecting disc fixes the shunt cover.
[0016] Further preferably, the shunt cover comprises:
[0017] The cover body is arranged in the connecting disc and is adapted to the connecting disc, the top surface of the cover body is in contact with the bottom surface of the bottom plate;
[0018] The first annular groove is arranged on the upper part of the cover body and is connected with the outlet of the gas inlet.
[0019] The first shunt hole is a through hole and is vertically arranged on the circumferential bottom surface in the first annular groove.
[0020] The second annular groove is arranged on the lower part of the cover body and is connected with the outlet of the first shunt hole, and the first shunt hole is used for shunting the gas flow entering the first annular groove to the second annular groove.
[0021] The second shunt hole is a through hole and is arranged on the circumferential bottom surface in the second annular groove, the outlet of the second shunt hole is connected with the sub-chamber, and the second shunt hole is used for shunting the gas flow in the second annular groove to the sub-chamber.
[0022] The inert gas from the bottom plate enters the cover body and diffuses on the circumferential bottom surface of the first annular groove, and then enters the first shunt hole to realize the first average shunt of the inert gas. The first shunt hole introduces the gas into the second annular groove, and the gas continues to diffuse in the second annular groove and enters the adjacent second shunt hole to realize the second shunt of the inert gas. Finally, the gas is uniformly sprayed from the second shunt hole away from the tungsten wire rope and towards the inner wall of the sub-chamber, and the gas impact on the tungsten wire rope is avoided to ensure the stability of the single crystal growth environment.
[0023] Further preferably, the first shunt hole is a straight hole, and the diameter of the first shunt hole is equal to the diameter of the second shunt hole.
[0024] The above technical solution enables the gas to directly and quickly enter the second annular groove.
[0025] Further preferably, the second shunt hole is an inclined hole, and the inclination angle of the second shunt hole is in the range of 45°-60°.
[0026] The above technical solution enables the inclined hole to uniformly spray the gas away from the tungsten wire rope and towards the inner wall of the sub-chamber, so that the gas is far away from the tungsten wire rope. The second shunt hole in the range can spray the gas at a better angle, and the gas can quickly fill the sub-chamber to maintain the vacuum state of the sub-chamber with a slight positive pressure
[0027] Further preferably, the width of the first annular groove is equal to the width of the second annular groove.
[0028] The above technical solution enables the second annular groove to secondarily average the shunt of all the gas in the first annular groove.
[0029] Further preferably, the upper part of the cover body is annular and is connected with the bottom of the pulling head.
[0030] The above technical solution enables the shunt cover to be firmly connected with the pulling head.
[0031] Further preferably, the lower part of the cover body is annular, and the width of the lower part of the cover body is equal to the width of the upper part of the cover body.
[0032] The above technical solution enables the shunt cover to have the characteristics of simple and compact structure. BRIEF DESCRIPTION OF DRAWINGS
[0033] Figure 1 The figure is a structural schematic diagram of the embodiment.
[0034] Figure 2 The figure is a structural schematic diagram of the shunt assembly in the embodiment.
[0035] Figure 3 The figure is a structural schematic diagram of the shunt cover in the embodiment.
[0036] Figure 4 It is a structure schematic view of the cover body in the embodiment.
[0037] Figure 5 It is a structure schematic view of the second shunt hole in the embodiment.
[0038] Reference signs: 1 - secondary chamber; 2 - bottom plate; 3 - shunt assembly; 31 - shunt cover; 311 - cover body; 312 - first annular groove; 313 - first shunt hole; 314 - second annular groove; 315 - second shunt hole; 32 - connecting disc; 4 - gas inlet; 5 - pulling head; 6 - tungsten wire rope. DETAILED DESCRIPTION
[0039] The following will be described in detail in combination with the accompanying drawings. Figures 1-5 The utility model will be further described in detail.
[0040] A kind of germanium single crystal furnace gas shunt device, as shown in figure, including: Figure 1
[0041] Bottom plate 2 is arranged at the bottom of pulling head 5 of germanium single crystal furnace, and is detachably connected with pulling head 5, and is detachably connected with gas inlet 4 on germanium single crystal furnace.
[0042] Shunt assembly 3 is arranged on bottom plate 2, between bottom plate 2 and secondary chamber 1 of germanium single crystal furnace, and is detachably connected with bottom plate 2, for dividing the gas flow of inert gas in circumferential direction.
[0043] Gas inlet 4 accesses inert gas into shunt assembly 3 through bottom plate 2, and shunt assembly 3 evenly distributes inert gas twice in circumferential direction, and finally sprays gas flow to the outside of tungsten wire rope 6 in secondary chamber 1 in the form of annular spray, avoids gas flow from contacting tungsten wire rope 6 to cause tungsten wire rope 6 to swing, ensures the stability of single crystal growth environment, enables single crystal to be smoothly drawn, improves the verticality and horizontality of crystal growth, and improves single crystal quality.
[0044] Specifically, as shown in figures Figure 1 And Figure 2 Shunt assembly 3 in the embodiment includes:
[0045] Shunt cover 31 is arranged on bottom plate 2 and abuts with the bottom surface of bottom plate 2, and its outlet is located in secondary chamber 1, and tungsten wire rope 6 inside germanium single crystal furnace passes through shunt cover 31, and shunt cover 31 is used for evenly distributing the gas flow of inert gas on annular circumferential surface.
[0046] Connecting disc 32 is arranged between bottom plate 2 and secondary chamber 1, and the top surface thereof is screwed with bottom plate 2, and the bottom surface thereof is connected with germanium single crystal furnace. Shunt cover 31 is located in connecting disc 32 and is adapted with connecting disc 32.
[0047] The inert gas from the gas filling nozzle 4 enters the shunt cover 31 through the bottom plate 2, is evenly shunted into the sub-chamber 1, and maintains the micro-positive pressure of the sub-chamber 1, wherein the gas flow is sprayed in a circumferential manner towards the inner wall of the sub-chamber 1, avoiding contact with the tungsten wire rope 6, and the connecting disc 32 plays a fixing role in shunting the gas of the shunt cover 31.
[0048] Specifically, as shown in Figure 2 and Figure 3 , the shunt cover 31 in the embodiment comprises:
[0049] a cover body 311 arranged in the connecting disc 32 and adapted with the connecting disc 32, the top surface of which is in contact with the bottom surface of the bottom plate 2;
[0050] a first annular groove 312 opened in the upper part of the cover body 311 and connected with the outlet of the gas filling nozzle 4.
[0051] a first shunt hole 313, which is a through hole and is vertically opened on the circumferential bottom surface in the first annular groove 312, and is arranged in a ring array in the first annular groove 312.
[0052] a second annular groove 314 opened in the lower part of the cover body 311 and connected with the outlet of the first shunt hole 313, the first shunt hole 313 being used for shunting the gas flow entering the first annular groove 312 to the second annular groove 314.
[0053] a second shunt hole 315, which is a through hole and is opened on the circumferential bottom surface in the second annular groove 314, and is arranged in a ring array in the second annular groove 314, the outlet of which is connected with the sub-chamber 1, and is used for shunting the gas flow in the second annular groove 314 to the sub-chamber 1.
[0054] The gas from the bottom plate 2 enters the cover body 311 and diffuses on the circumferential bottom surface of the first annular groove 312, and then enters the first shunt hole 313, realizing the first shunting of the inert gas. The first shunt hole 313 introduces the gas to the second annular groove 314, the gas continues to diffuse in the second annular groove 314, and then enters the second shunt hole 315, realizing the second shunting of the inert gas. Finally, the gas is uniformly sprayed from the second shunt hole 315 towards the inner wall of the sub-chamber 1, avoiding the impact of the gas on the tungsten wire rope 6 to generate swing, and ensuring the stability of the single crystal growth environment.
[0055] In another embodiment, the number of the first shunt hole 313 and the second shunt hole 315 is greater than 4, and the number of the first shunt hole 313 is equal to the number of the second shunt hole 315, and the first shunt hole 313 and the second shunt hole 315 are distributed in a staggered manner, so that the inert gas can diffuse in the first annular groove 312 for a complete circle, then diffuse for a second circle in the second annular groove 314, and then uniformly enter the second shunt hole 315, realizing the purpose of fully shunting the gas flow. In another embodiment, the number of the first shunt hole 313 and the second shunt hole 315 is greater than 4, and the number of the first shunt hole 313 is equal to the number of the second shunt hole 315, and the first shunt hole 313 and the second shunt hole 315 are distributed in a staggered manner, so that the inert gas can diffuse in the first annular groove 312 for a complete circle, then diffuse for a second circle in the second annular groove 314, and then uniformly enter the second shunt hole 315, realizing the purpose of fully shunting the gas flow.
[0056] Specifically, as shown in Figure 2 and Figure 3 , the first shunt hole 313 in the embodiment is a straight hole, and the diameter of the first shunt hole 313 is equal to the diameter of the second shunt hole 315, so that the gas can directly and quickly enter the second annular groove 314.
[0057] Specifically, as shown in Figure 2 and Figure 3 , the second shunt hole 315 in the embodiment is an inclined hole, and the inclination angle of the second shunt hole 315 is in the range of 45°-60°, so that the gas can be uniformly sprayed back to the tungsten wire rope 6 and towards the inner wall of the sub-chamber 1, and the gas is far away from the tungsten wire rope 6. The second shunt hole 315 in the range can spray the gas at a better angle, and the gas can quickly fill the sub-chamber 1, so as to maintain the vacuum state of the sub-chamber 1 with a slight positive pressure.
[0058] Specifically, as shown in Figure 2 and Figure 3 , the width of the first annular groove 312 in the embodiment is equal to the width of the second annular groove 314, so that the second annular groove 314 can evenly shunt all the gas in the first annular groove 312 for the second time.
[0059] Specifically, as shown in Figure 3 and Figure 4 , the upper part of the cover body 311 in the embodiment is annular, and is connected with the bottom of the pulling head 5, so as to realize the firm connection between the shunt cover 31 and the pulling head 5.
[0060] Specifically, as shown in Figure 3 and Figure 5 , the lower part of the cover body 311 in the embodiment is annular, and the width of the lower part of the shunt cover 31 is equal to the width of the upper part, so that the shunt cover 31 has the characteristics of simple structure, light weight and compactness.
[0061] Please refer to Figures 1-5 , the working principle of the embodiment is described as follows:
[0062] The gas flow of inert gas enters the gas filling nozzle 4 and the bottom plate 2 in sequence, and then enters the shunt cover 31 from the bottom plate 2. The gas flow in the first annular groove 312 performs diffusion movement and then enters the second annular groove 314 from the first shunt hole 313, so as to evenly shunt the gas flow for the first time. In the second annular groove 314, the inert gas performs second diffusion movement along the circumferential direction, and then enters the second shunt hole 315. The gas flow is sprayed back to the tungsten wire rope 6 in the form of inclined spraying through the second shunt hole 315, so as to realize the purpose of second division and spraying of the gas flow. The gas flow avoids contact with the tungsten wire rope 6, directly avoids the problem of swing of the tungsten wire rope 6 in the sub-chamber 1, provides a good and stable environment for single crystal growth, provides protection for smooth pulling of single crystal, improves the verticality and horizontality of crystal growth, and improves the quality of single crystal.
[0063] In summary, the shunt assembly 3 protects the tungsten wire rope 6 from being impacted by the airflow to avoid swinging by the unique internal structure to evenly divide and spray the airflow of inert gas twice, and ensures the crystal to be smoothly drawn into high-quality single crystal.
[0064] The specific embodiment is only an explanation of the utility model, and is not a limitation of the utility model, and a person skilled in the art can make a modification without creative contribution to the embodiment according to the needs after reading the specification, but as long as the modification is within the protection scope of the utility model, the modification is protected by the patent law.
Claims
1. A gas diversion device for a germanium single crystal furnace, characterized in that, include: The base plate (2) is set at the bottom of the lifting head (5) of the germanium single crystal furnace, and is detachably connected to the lifting head (5) and detachably connected to the gas filling nozzle (4) on the germanium single crystal furnace. The flow splitter assembly (3) is disposed on the base plate (2) and located between the base plate (2) and the sub-chamber (1) of the germanium single crystal furnace. It is detachably connected to the base plate (2) and is used to evenly distribute the gas flow of inert gas in the circumferential direction.
2. The gas diversion device for a germanium single crystal furnace according to claim 1, characterized in that, The splitter component (3) includes: A flow divider (31) is disposed on the base plate (2) and abuts against the bottom surface of the base plate (2). Its outlet is located in the sub-chamber (1). The tungsten wire rope (6) inside the germanium single crystal furnace passes through the flow divider (31). The flow divider (31) is used to evenly distribute the gas flow of inert gas on the annular circumferential surface. A connecting plate (32) is disposed between the base plate (2) and the sub-chamber (1), with its top surface screwed to the base plate (2) and its bottom surface connected to the germanium single crystal furnace; the flow divider (31) is located in the connecting plate (32) and is adapted to the connecting plate (32).
3. The gas diversion device for a germanium single crystal furnace according to claim 2, characterized in that, The flow divider (31) includes: The cover (311) is disposed in the connecting plate (32) and adapted to the connecting plate (32), with its top surface in contact with the bottom surface of the base plate (2); The first annular groove (312) is formed on the upper part of the cover (311) and is connected to the outlet of the air inlet (4); The first diversion hole (313) is a through hole, which is vertically opened on the circumferential bottom surface inside the first annular groove (312); The second annular groove (314) is formed in the lower part of the cover (311) and communicates with the outlet of the first diversion hole (313). The first diversion hole (313) is used to divert the gas flow entering the first annular groove (312) to the second annular groove (314). The second diversion hole (315) is a through hole, which is opened on the circumferential bottom surface of the second annular groove (314). Its outlet is connected to the sub-chamber (1) and is used to divert the gas flow in the second annular groove (314) to the sub-chamber (1).
4. The gas diversion device for a germanium single crystal furnace according to claim 3, characterized in that, The first diversion hole (313) is a straight hole, and its diameter is equal to that of the second diversion hole (315).
5. The gas diversion device for a germanium single crystal furnace according to claim 3, characterized in that, The second diversion hole (315) is an inclined hole with an inclination angle ranging from 45° to 60°.
6. The gas diversion device for a germanium single crystal furnace according to claim 3, characterized in that, The width of the first annular groove (312) is equal to the width of the second annular groove (314).
7. The gas diversion device for a germanium single crystal furnace according to claim 3, characterized in that, The upper part of the cover (311) is ring-shaped and is connected to the bottom of the lifting head (5).
8. The gas diversion device for a germanium single crystal furnace according to claim 7, characterized in that, The lower part of the cover (311) is ring-shaped, and the width of the lower part of the cover (311) is equal to the width of the upper part.