Laminated battery

Abstract

The utility model provides a laminated cell, which belongs to the technical field of solar cells and comprises a crystalline silicon bottom cell, a composite layer, a first metal oxide modified layer, an SAMs layer, a second metal oxide modified layer, a perovskite absorption layer, a passivation layer, an electron transport layer, a hole blocking layer, a transparent electrode and a metal electrode. The number of the metal oxide modified layers is two, the first metal oxide modified layer is deposited between the composite layer and the SAMs layer, and the second metal oxide modified layer is deposited between the SAMs layer and the perovskite absorption layer. The chemical composition of the surface of the composite layer is changed through the first metal oxide modified layer, so that the surface energy of the composite layer is changed, the spreading of an SAMs solution on the surface of the composite layer can be improved through the change of the surface energy, the wettability of the SAMs solution can be improved, and the chemical composition of the surface of the SAMs layer is changed through the second metal oxide modified layer, so that the surface energy of the SAMs layer is changed. The change of the surface energy can improve the spreading of the perovskite solution on the surface of the SAMs and improve the wettability.

Description

TECHNICAL FIELD

[0001] The utility model belongs to solar cell technical field, and specifically relates to a laminated battery. BACKGROUND

[0002] Photovoltaic technology provides solid support for the vigorous development of renewable energy, leading a new chapter of energy transformation by supplying sustainable and clean electricity. Perovskite solar cells, with their high photoelectric conversion efficiency of over 26% and the great potential of low-cost production, have become a promising candidate in the next generation of photovoltaic technology. At the same time, silicon solar cells, with their excellent stability and mature manufacturing process, have long been a dominant force in the photovoltaic market. Combining these two devices with their respective advantages into a double-end series structure can break through the Shockley-Queisser efficiency limit of single-junction devices, thereby potentially reducing overall costs. Currently, the certified photoelectric conversion efficiency of two-end perovskite / silicon tandem solar cells has reached as high as 34.6%, fully demonstrating the great potential of this technology in improving efficiency and reducing costs.

[0003] In the prior art, the perovskite hole transport layer material in high-efficiency laminated batteries mainly uses self-assembled monolayer (SAMs) material, which then encounters a significant problem of poor wettability when depositing perovskite on SAMs, resulting in uneven perovskite film formation and poor film quality. To address the above problems, it is necessary to propose a laminated battery to solve the problem of poor uniformity of perovskite film formation on SAMs in laminated batteries. SUMMARY

[0004] The utility model aims at providing a laminated battery, aiming at solving the problems raised in the above background technology.

[0005] To achieve the above-mentioned purpose, the utility model provides the following technical scheme:

[0006] A laminated battery, comprising a crystalline silicon bottom cell, a composite layer, a first metal oxide modification layer, a SAMs layer, a second metal oxide modification layer, a perovskite absorption layer, a passivation layer, an electron transport layer, a hole blocking layer, a transparent electrode, and a metal electrode. The metal oxide modification layer has two layers of metal oxide modification layers. The first metal oxide modification layer is deposited between the composite layer and the SAMs layer, and the second metal oxide modification layer is deposited between the SAMs layer and the perovskite absorption layer.

[0007] As a preferred scheme of the utility model, the material of the crystalline silicon bottom cell is any one of heterojunction cells, Topcon cells, or perc cells, and the material of the composite layer is any one of ITO, IZO, IWO, or VTTO.

[0008] As a preferred scheme of the utility model, the thickness of the transparent electrode is 40-200nm, the material quality of the transparent electrode material is any one of ITO, IZO, IWO or VTTO, the thickness of the metal electrode is 80-500nm, the material quality of the metal electrode material is any one of Au, Ag, Cu or Al.

[0009] As a preferred scheme of the utility model, the thickness of the SAMs layer is 5-50nm, the material quality of the SAMs layer material is any one of Meo-2PACz, Me-4PAC, 4PADCB or ph-4PACz, the thickness of the passivation layer is 0.5-5nm, the material quality of the passivation layer material is any one of LiF, PI, PEAI or EDAI2.

[0010] As a preferred scheme of the utility model, the thickness of the electron transport layer is 5-40nm, the material quality of the electron transport layer material is any one of C60, PCBM or SnO2, the thickness of the hole blocking layer is 5-40nm, the material quality of the hole blocking layer material is any one of TiO2, SnO2, ZnO or ZnSnO x .

[0011] As a preferred scheme of the utility model, the thickness of the perovskite absorption layer is 400-1200nm, the structural formula of the perovskite absorption layer is any one of MAPbI 3、 , FAPbI3 or FA x Cs y MA 1-x-y Pb (I a Br b Cl 1-a-b )3, the thickness of the first metal oxide modification layer is 1-20nm, the material quality of the first metal oxide modification layer material is any one of NiOx, Al2O3 or ZnO.

[0012] As a preferred scheme of the utility model, the thickness of the second metal oxide modification layer is 1-10nm, the material quality of the second metal oxide modification layer material is any one of NiO x , Al2O3 or ZnO.

[0013] Compared with the prior art, the utility model has the advantages that the first metal oxide modification layer changes the chemical composition of the composite layer surface, thereby changing its surface energy, the change of surface energy can improve the spreading of SAMs solution on the composite layer surface and improve wettability, the second metal oxide modification layer changes the chemical composition of the SAMs layer surface, thereby changing its surface energy, the change of surface energy can improve the spreading of perovskite solution on the SAMs surface and improve wettability. Attached Figure Description

[0014] To more clearly illustrate the technical solutions of the embodiments of this utility model, the drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort. Among them:

[0015] Fig. 1 This is a schematic diagram of the overall structure of this utility model;

[0016] Fig. 2 This is a schematic diagram of the overall structure of this utility model from another perspective;

[0017] Fig. 3 This is a schematic cross-sectional view of the overall structure of this utility model.

[0018] In the figure: 100, a stacked battery; 101, a crystalline silicon bottom battery; 102, a composite layer; 103, a first metal oxide modified layer; 104, a SAMs layer; 105, a second metal oxide modified layer; 106, a perovskite absorber layer; 107, a passivation layer; 108, an electron transport layer; 109, a hole blocking layer; 110, a transparent electrode; 111, a metal electrode. Detailed Implementation

[0019] To make the above-mentioned objectives, features and advantages of this utility model more apparent and understandable, the specific embodiments of this utility model will be described in detail below with reference to the accompanying drawings.

[0020] Many specific details are set forth in the following description in order to provide a full understanding of the present invention. However, the present invention may also be implemented in other ways different from those described herein. Those skilled in the art can make similar extensions without departing from the spirit of the present invention. Therefore, the present invention is not limited to the specific embodiments disclosed below.

[0021] Secondly, the term "an embodiment" or "embodiment" as used herein refers to a specific feature, structure, or characteristic that may be included in at least one implementation of the present invention. The phrase "in one embodiment" appearing in different places in this specification does not necessarily refer to the same embodiment, nor is it a single or selective embodiment that excludes other embodiments.

[0022] Example

[0023] Reference Figs. 1-3 This is an embodiment of the present invention, which provides a stacked battery, comprising:

[0024] The bottom cell 101, the composite layer 102, the first metal oxide modification layer 103, the SAMs layer 104, the second metal oxide modification layer 105, the perovskite absorption layer 106, the passivation layer 107, the electron transport layer 108, the hole blocking layer 109, the transparent electrode 110 and the metal electrode 111, the first metal oxide modification layer 103 is deposited between the composite layer 102 and the SAMs layer 104, and the second metal oxide modification layer 105 is deposited between the SAMs layer 104 and the perovskite absorption layer 106.

[0025] It should be noted that the metal oxide modification layer has two metal oxide modification layers, the bottom cell 101, which can collect longer wavelength photons to generate electron-hole pairs, the composite layer 102, which can improve charge transport efficiency and reduce interface recombination loss, the first metal oxide modification layer 103, which can improve interface properties and enhance charge transport, the SAMs layer 104, which can adjust interface energy level and reduce charge recombination, the second metal oxide modification layer 105, which can further improve interface properties and improve charge separation efficiency, the perovskite absorption layer 106, which can absorb shorter wavelength photons to generate high energy electron-hole pairs, the passivation layer 107, which can reduce surface recombination and improve carrier lifetime, the electron transport layer 108, which can quickly transport electrons and reduce electron-hole recombination, the hole blocking layer 109, which can prevent holes from entering the electron transport layer and improve charge separation efficiency, the transparent electrode 110, which can allow light to pass through and collect current, and the metal electrode 111, which can collect and transport current to form an external circuit.

[0026] Specifically, the material of the bottom cell 101 is any one of heterojunction cell, Topcon cell or perc cell, and the material of the composite layer 102 is any one of ITO, IZO, IWO or VTTO.

[0027] Further, the thickness of the transparent electrode 110 is 40-200nm, the material of the transparent electrode 110 is any one of ITO, IZO, IWO or VTTO, the thickness of the metal electrode 111 is 80-500nm, and the material of the metal electrode 111 is any one of Au, Ag, Cu or Al.

[0028] Preferably, the thickness of the SAMs layer 104 is 5-50nm, the material of the SAMs layer 104 is any one of Meo-2PACz, Me-4PAC, 4PADCB or ph-4PACz, the thickness of the passivation layer 107 is 0.5-5nm, and the material of the passivation layer 107 is any one of LiF, PI, PEAI or EDAI2.

[0029] It should be noted that the thickness of the electron transport layer 108 is 5-40nm, the material of the electron transport layer 108 is any one of C60, PCBM or SnO2, the thickness of the hole blocking layer 109 is 5-40nm, the material of the hole blocking layer 109 is any one of TiO2, SnO2, ZnO or ZnSnO x

[0030] Further, the thickness of the perovskite absorption layer 106 is 400-1200nm, the structural formula of the perovskite absorption layer 106 is any one of MAPbI 3、 FAPbI3or FA x Cs y MA 1-x-y Pb(I a Br b Cl 1-a-b )3, the thickness of the first metal oxide modification layer 103 is 1-20nm, and the material of the first metal oxide modification layer 103 is any one of NiOx, Al2O3 or ZnO.

[0031] Wherein, MA represents methylamine cation (CH3NH 3+ ), FA represents formamidinium cation CH4N 2+。

[0032] Specifically, the thickness of the second metal oxide modification layer 105 is 1-10nm, and the material of the second metal oxide modification layer 105 is any one of NiOx, Al2O3 or ZnO.

[0033] It should be noted that the preparation method of the first metal oxide modification layer 103 and the second metal oxide modification layer 105 is any one of solution spin coating method, physical evaporation method or atomic layer deposition method, and magnetron sputtering method.

[0034] In use, sunlight is irradiated to the transparent electrode 110, and passes through the transparent electrode to the perovskite absorption layer 106 and the crystalline silicon bottom cell 101;

[0035] Light absorption: the perovskite absorption layer 106 absorbs photons of shorter wavelengths to generate high-energy electron-hole pairs; the crystalline silicon bottom cell 101 absorbs photons of longer wavelengths to generate low-energy electron-hole pairs;

[0036] Charge separation: in the perovskite absorption layer 106, electrons are excited to the conduction band, and holes are left in the valence band; in the crystalline silicon bottom cell 101, electrons and holes are also separated in the corresponding energy bands;

[0037] ​Charge transport: electrons are transported from the perovskite absorber layer 106 through the electron transport layer 108 to the transparent electrode 110, and holes are transported from the perovskite absorber layer 106 through the hole blocking layer 109 to the metal electrode 111, in the crystalline silicon bottom cell 101, electrons and holes are transported to the recombination layer 102 and the metal electrode 111, respectively;

[0038] Current generation: electrons and holes are collected at the transparent electrode 110 and the metal electrode 111, respectively, forming a current in an external circuit.

[0039] In summary, the chemical composition of the recombination layer 102 surface is changed by the first metal oxide modification layer 103, thus changing its surface energy, the change in surface energy can improve the spreading of the SAMs solution on the recombination layer 102 surface, improving wettability, the chemical composition of the SAMs layer 104 surface is changed by the second metal oxide modification layer 105, thus changing its surface energy, the change in surface energy can improve the spreading of the perovskite solution on the SAMs surface, improving wettability.

[0040] Importantly, it should be noted that the constructions and arrangements of the present application shown in the various exemplary embodiments are illustrative only. Although only a few embodiments have been described in detail in this disclosure, many modifications are possible (e.g., variations in sizes, dimensions, structures, shapes and proportions of the various elements, values of parameters, mounting arrangements, use of materials, colors, orientations, etc.) without materially departing from the novel teachings and advantages of the subject matter described in this application. For example, elements shown as integrally formed can be constructed of multiple parts or elements, the position of elements can be reversed or otherwise varied, and the nature or number of elements or positions can be altered or varied. Accordingly, all such variations are intended to be included within the scope of the present application. The order or sequence of any process or method steps can be changed, or reordered, according to alternative embodiments. Any "means plus function" clauses are intended to cover the structures described herein as performing the recited functions and not only structural equivalents but also equivalent structures. Other substitutions, modifications, changes, and omissions can be made in the design, operating conditions, and arrangement of the exemplary embodiments without departing from the scope of the present application. Accordingly, the present application is not limited to the particular embodiments described and illustrated herein, but extends to all structures that fall within the scope of the appended claims.

[0041] Also, in order to provide a concise description of exemplary embodiments, not all features of an actual implementation can be described (i.e., those related to the

[0042] It is to be understood that the development of the particular implementations described herein was not determined merely by the availability of certain items or materials. Rather and more generally, specific implementations can be determined, for example, based on the particular requirements of the instrument or system to which that implementation relates. For example, a specific implementation of a reagent or kit can be determined based on the number of assays or assays types that are to be performed by the instrument or system that implementation relates to.

[0043] It should be noted that the above examples are only used to illustrate the technical solutions of the present application, not to limit it. Although the present application has been described in detail with reference to the preferred embodiments, those skilled in the art should understand that the technical solutions of the present application can be modified or replaced by equivalents without departing from the spirit and scope of the technical solutions of the present application, and they should be covered in the scope of the claims of the present application.

Claims

1. A stacked battery, characterized in that: include, The crystalline silicon bottom cell comprises a composite layer (102), a first metal oxide modified layer (103), a SAMs layer (104), a second metal oxide modified layer (105), a perovskite absorber layer (106), a passivation layer (107), an electron transport layer (108), a hole blocking layer (109), a transparent electrode (110), and a metal electrode (111). The first metal oxide modified layer (103) is deposited between the composite layer (102) and the SAMs layer (104), and the second metal oxide modified layer (105) is deposited between the SAMs layer (104) and the perovskite absorber layer (106).

2. The stacked battery according to claim 1, characterized in that: The crystalline silicon base cell (101) is made of any one of heterojunction cell, Topcon cell or PERC cell, and the composite layer (102) is made of any one of ITO, IZO, IWO or VTTO.

3. A stacked battery according to claim 2, characterized in that: The thickness of the transparent electrode (110) is 40-200 nm, and the material of the transparent electrode (110) is any one of ITO, IZO, IWO or VTTO. The thickness of the metal electrode (111) is 80-500 nm, and the material of the metal electrode (111) is any one of Au, Ag, Cu or Al.

4. A stacked battery according to claim 3, characterized in that: The thickness of the SAMs layer (104) is 5-50 nm, and the material of the SAMs layer (104) is any one of Meo-2PACz, Me-4PAC, 4PADCB or ph-4PACz. The thickness of the passivation layer (107) is 0.5-5 nm, and the material of the passivation layer (107) is any one of LiF, PI, PEAI or EDAI2.

5. A stacked battery according to claim 4, characterized in that: The electron transport layer (108) has a thickness of 5-40 nm, and the material of the electron transport layer (108) is any one of C60, PCBM, or SnO2. The hole blocking layer (109) has a thickness of 5-40 nm, and the material of the hole blocking layer (109) is TiO2, SnO2, ZnO, or ZnSnO. x Any one of them.

6. A stacked battery according to claim 5, characterized in that: The thickness of the perovskite absorber layer (106) is 400-1200 nm, and the structural formula of the perovskite absorber layer (106) is MAPbI. 3、 FAPbI3 or FA x Cs y MA 1-x-y Pb(I a Br b Cl 1-a-b The thickness of the first metal oxide modified layer (103) is 1-20 nm, and the material of the first metal oxide modified layer (103) is any one of NiOx, Al2O3 or ZnO.

7. A stacked battery according to claim 6, characterized in that: The thickness of the second metal oxide modified layer (105) is 1-10 nm, and the material of the second metal oxide modified layer (105) is NiO. x Any one of Al2O3 or ZnO.

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