Pedestal carrier and vapor phase growth apparatus

Abstract

The utility model provides a base carrier and vapor phase growth equipment, the bottom surface of a top plate of the base carrier intersects with the inner wall of a cylindrical side plate to form a first connecting surface, the top of the first connecting surface is higher than the bottom surface of the top plate, the top surface of the top plate intersects with the outer wall of the cylindrical side plate to form a second connecting surface, and the first connecting surface sinks towards the second connecting surface. The average thickness between the first connecting face and the second connecting face is not larger than the average thickness of the top plate, and therefore the peripheral area formed by intersection of the top plate and the cylindrical side plate is thinned. The heating device of the vapor phase growth equipment is arranged below the top plate carried by the base, namely, in the thinned peripheral area, so that more heat can be provided for the peripheral area of the top plate through the edge heating area compared with that of the internal area, heat can be gathered in the middle area, and further more uniform reaction temperature can be provided for the base and the substrate; and the temperature control precision of vapor phase growth equipment and the film growth quality of products are improved.

Description

Technical Field

[0001] This application relates to the field of semiconductor processing equipment technology, and in particular to a substrate carrier and vapor phase growth equipment. Background Technology

[0002] Vapor phase growth equipment is a crucial piece of equipment in semiconductor device manufacturing processes. Taking MOCVD equipment as an example, the substrate is placed on a base, and a resistance heater is located below the base. A DC voltage or current is applied to the resistance heater, causing the heating element (such as a tungsten resistance wire or a molybdenum resistance wire) to generate Joule heat. Heat is then transferred to the substrate through the base via thermal conduction and thermal radiation to bring it to the reaction temperature range. After the reaction chamber reaches the reaction pressure, gaseous group III organic compounds and gaseous group V hydrides are provided to the substrate as source materials. A vapor phase growth reaction is carried out on the substrate through thermal decomposition to generate a semiconductor material layer.

[0003] Temperature has a significant impact on the growth quality of semiconductor material layers. However, due to the self-heating of the resistance heater, it not only transfers heat to the substrate but also dissipates heat to the reaction space. This results in some heat loss from the resistance heater, causing the temperature of the outer ring of the substrate to be lower than that of the inner ring, thus disrupting the temperature uniformity of the substrate surface. In addition, the corrosive reaction gases in the group III organic compounds and gaseous group V hydrides source materials can also adversely affect the resistance heater, especially causing corrosion of heating elements such as the resistance wire. This can lead to a series of problems, such as shortened equipment lifespan or decreased temperature control accuracy. Utility Model Content

[0004] In view of the above-mentioned defects in the existing vapor phase growth apparatus, this application provides a base carrier and a vapor phase growth apparatus including the base carrier to solve one or more of the above-mentioned problems.

[0005] To achieve the above objectives, this application provides a base carrier, including a cylindrical side plate and a top plate for placing a supporting base. The cylindrical side plate surrounds the edge of the top plate and extends in a direction away from the top plate to form a cover with a bottom opening, wherein:

[0006] The bottom surface of the top plate intersects with the inner wall of the cylindrical side plate to form an annular first connecting surface, and the top of the first connecting surface is higher than the bottom surface of the top plate.

[0007] The top surface of the top plate intersects with the outer wall of the cylindrical side plate to form an annular second connecting surface;

[0008] The first connecting surface is recessed towards the second connecting surface;

[0009] An average thickness between the first connecting surface and the second connecting surface is less than an average thickness of the top plate.

[0010] The application also provides a vapor phase growth device, comprising a reaction cavity and a susceptor carrier arranged inside the reaction cavity; further comprising a heating device, the susceptor carrier is the susceptor carrier provided in the above technical solution, the susceptor carrier comprises a top plate and a cylindrical side plate, the cylindrical side plate is arranged around the edge of the top plate and extends away from the top plate to form a cover body with an open bottom, and the heating device is arranged in the cover body and below the top plate.

[0011] The susceptor carrier and the vapor phase growth device provided by the application have the beneficial effects that: the intersection of the bottom surface of the top plate and the inner wall of the cylindrical side plate forms a ring-shaped first connecting surface, the top of the first connecting surface is higher than the bottom surface of the top plate, the intersection of the top surface of the top plate and the outer wall of the cylindrical side plate forms a ring-shaped second connecting surface, the first connecting surface is recessed towards the second connecting surface, and the average thickness between the first connecting surface and the second connecting surface is less than the average thickness of the top plate, thereby thinning the intersection of the top plate and the cylindrical side plate, so that the heating device of the vapor phase growth device is arranged below the top plate of the susceptor carrier, the edge heating area is accommodated in the space surrounded by the first connecting surface, more heat can be provided to the peripheral area of the top plate than the inner area through the thinned area, the heat is concentrated in the middle area, and then more uniform reaction temperature is provided to the susceptor and the substrate, the temperature control precision of the vapor phase growth device and the growth quality of the product film are improved.

[0012] Optionally, the top plate and the cylindrical side plate are integrally formed.

[0013] Optionally, the first connecting surface and the second connecting surface are continuous curved surface structures.

[0014] Optionally, the curvature of the first connecting surface is greater than the curvature of the second connecting surface.

[0015] Optionally, the first connecting surface and the bottom surface of the top plate, and the inner side wall of the cylindrical side plate are smoothly transitioned and meet the N-order derivative continuous relationship;

[0016] The second connecting surface and the top surface of the top plate, and the outer side wall of the cylindrical side plate are smoothly transitioned and meet the N-order derivative continuous relationship; wherein 0

[0017] Optionally, the average thickness between the first connecting surface and the second connecting surface is greater than the average thickness of the cylindrical side plate.

[0018] Optionally, the bottom surface of the top plate meets the inner wall of the cylindrical side plate and forms a ring-shaped first connecting surface, the heating device comprises a first heating part and a second heating part surrounding the first heating part; wherein at least part of the second heating part is arranged below the first connecting surface and is arranged in dependence on the curvature of the first connecting surface; the height of at least part of the second heating part is higher than the height of the first heating part.

[0019] Optionally, the vapor phase growth apparatus further comprises:

[0020] A sleeve is sleeved outside the cylindrical side plate and has a gap with the cylindrical side plate to form a flow guide channel, the height of the sleeve is lower than the height of the top surface of the top plate;

[0021] A purge gas supply device has a gas supply end in communication with the flow guide channel to provide purge gas.

[0022] Optionally, a sealing structure is arranged at the connection between the bottom of the susceptor carrier and the bottom of the reaction cavity to strengthen the sealing relationship. BRIEF DESCRIPTION OF DRAWINGS

[0023] Figure 1 A structural schematic diagram of a susceptor carrier provided in Embodiment One of the present application;

[0024] Figure 2 A partial enlarged structural schematic diagram of Figure 1

[0025] Figure 3 A structural schematic diagram of a vapor phase growth apparatus provided in Embodiment Two of the present application;

[0026] Figure 4 A partial enlarged structural schematic diagram of Figure 3

[0027] Figure 5 A schematic diagram of one arrangement mode of a heating device provided in Embodiment Two of the present application.

[0028] REFERENCE SIGNS:

[0029] 10 susceptor carrier

[0030] 110 top plate

[0031] 120 cylindrical side plate

[0032] 210 first connecting surface

[0033] 220 second connecting surface

[0034] 300 heating device

[0035] 310 first heating part​​

[0036] 320 second heating portion

[0037] 400 sleeve

[0038] 500 purge gas supply

[0039] 600 sealing structure

[0040] 700 reflective plate

[0041] 800 electrode plate DETAILED DESCRIPTION

[0042] The present application will be described in detail below with reference to specific embodiments. Other advantages and effects of the present application will be easily understood by those skilled in the art from the content disclosed in the specification. The present application can also be implemented or applied in other different embodiments, and various modifications or changes can be made to the details in the specification based on different views and applications without departing from the spirit of the present application. It should be noted that the following embodiments and features in the embodiments can be combined with each other without conflict.

[0043] It should be understood that the drawings provided in the embodiments of the present application only schematically illustrate the basic concepts of the present application, and although the drawings only show the components related to the present application, they are not drawn according to the number, shape and size of the components in actual implementation. The shape, number and proportion of each component in actual implementation can be changed at will, and the layout form of the components can also be more complex. The structure, proportion, size, etc. shown in the drawings of the specification are only used to cooperate with the content disclosed in the specification for those skilled in the art to understand and read, and not to limit the defined conditions that can be implemented by the present application, so they do not have technical substantive significance. Any modification of the structure, change of the proportion relationship or adjustment of the size, without affecting the effects that can be produced by the present application and the purposes that can be achieved, should still fall within the scope of the technical content disclosed by the present application. The technical solutions of the present application will be described in detail below by combining the drawings in the embodiments of the present application, through Example One and Example Two.

[0044] Example One:

[0045] Referring to Figure 1 and Figure 2 , the present embodiment provides a susceptor carrier 10.

[0046] The base carrier 10 is used to set in the reaction chamber of a vapor phase growth device, and is used to place a carrier base, such as a graphite base, and the carrier base is further provided with a recess for placing a substrate. Specifically, the base carrier 10 comprises a cylindrical side plate 120 and a top plate 110 for placing the carrier base, the cylindrical side plate 120 surrounds the edge of the top plate 110 and extends away from the top plate 110 to form a cover body with an open bottom; wherein the bottom surface of the top plate 110 meets the inner wall of the cylindrical side plate 120 and forms a ring-shaped first connecting surface 210, the top of the first connecting surface 210 is higher than the bottom surface of the top plate 110; the top surface of the top plate 110 meets the outer wall of the cylindrical side plate 120 and forms a second connecting surface 220; the first connecting surface 210 is recessed towards the second connecting surface 220, and the average thickness between the first connecting surface 210 and the second connecting surface 220 is less than the average thickness of the top plate 110, that is, the bottom surface of the top plate 110 and the top inner wall of the cylindrical side plate 120 meet and form a recessed surface (i.e. the first connecting surface 210), and the top surface of the top plate 110 and the top outer wall of the cylindrical side plate 120 meet and form a corresponding recessed surface (i.e. the second connecting surface 220), and the average thickness between the first connecting surface 210 and the second connecting surface 220 is less than the average thickness of the top plate 110, so as to realize the thinning of the peripheral area formed by the intersection of the top plate 110 and the cylindrical side plate 120, when the heating device is arranged below the top plate 110, the edge heating area of the heating device 110 can be accommodated in the area below the recessed surface to make the heat at the lower edge of the top plate 110 concentrate, avoid excessive dispersion of heat at the lower edge of the top plate 110, and concentrate heat in the middle of the substrate above the top plate 110, which is beneficial to the relatively uniform reaction temperature.

[0047] In some embodiments, the thickness of the top plate 110 is not less than the wall thickness of the cylindrical side plate 120.

[0048] In some embodiments, referring to Figure 2 , the height of the second connecting surface 220 gradually decreases along the radial direction from the center to the outer edge of the top plate 110, the connection between the second connecting surface 220 and the top plate 110 is the highest point of the second connecting surface 220, and the connection between the second connecting surface 220 and the cylindrical side plate 120 is the lowest point of the second connecting surface 220, by simultaneously optimizing the structure of the first connecting surface 210 and the second connecting surface 220 to thin the wall thickness at the junction, the junction has a relatively uniform wall thickness, and the structural strength of the junction is ensured.

[0049] Further, continuing to refer to Figure 2, the first connecting surface 210 includes a first section with gradually increasing height and a second section with gradually decreasing height from the center to the outer edge of the top plate 110 in the radial direction, and the second connecting surface 220 always gradually decreases in height from the center to the outer edge. The height variation of the first connecting surface 210 and the second connecting surface 220 can be the same or different. Therefore, the junction of the top plate 110 and the cylindrical side plate 120 can be formed into a transition structure with the wall thickness first decreasing, then increasing, and then decreasing to the same thickness as the cylindrical side plate 120, or into a transition structure with the wall thickness decreasing from the thickness of the top plate 110 to the same thickness as the cylindrical side plate 120.

[0050] In some embodiments, continuing to refer to Figure 2 , the average thickness between the first connecting surface 210 and the second connecting surface 220 is greater than the average thickness of the cylindrical side plate 120, so as to strengthen the support strength of the susceptor and prevent stress concentration at the junction from causing damage to the susceptor carrier structure.

[0051] In some embodiments, the thickness between the first connecting surface 210 and the second connecting surface 220 is not always equal. If the junction of the top plate 110 and the cylindrical side plate 120 is in the form of a structure with the wall thickness decreasing from the thickness of the top plate 110 to the same thickness as the cylindrical side plate 120, the minimum thickness between the first connecting surface 210 and the second connecting surface 220 is the thickness of the cylindrical side plate 120.

[0052] In optional embodiments, if the wall thickness at the junction of the top plate 110 and the cylindrical side plate 120 is in the form of a structure with the wall thickness first decreasing, then increasing, and then decreasing to the same thickness as the cylindrical side plate 120, there is a minimum thickness in the middle between the first connecting surface 210 and the second connecting surface 220, which can be less than the average thickness of the cylindrical side plate 120.

[0053] In optional embodiments, continuing to refer to Figure 2 , the first connecting surface 210 is a continuous curved surface structure, so as to reduce the dead angle structure inside the susceptor carrier 10, improve the support strength of the susceptor, and avoid unnecessary bumps between the edge of the heating device and the junction structure inside the susceptor carrier during subsequent installation, which can cause damage to the heater such as a resistance wire, and affect the heating efficiency and equipment temperature control.

[0054] In optional embodiments, continuing to refer to Figure 2 , the second connecting surface 220 is a continuous curved surface structure, so as to reduce the stress concentration at the junction, ensure the structural strength of the susceptor carrier 10, and avoid unnecessary bumps to the susceptor and the effect of turbulent flow on the gas flow field when the susceptor is placed. In some specific embodiments, the curvature variation of the second connecting surface 220 is adapted to the gas flow field, so as to facilitate the stable gas flow field necessary for the smooth process.

[0055] Further, the first connecting surface 210 and the second connecting surface 220 are both continuous curved surface structures, so that the inner and outer surfaces of the base carrier 10 have good mechanical structures.

[0056] In some embodiments, the curvature of the first connecting surface 210 is greater than the curvature of the second connecting surface 220, which is conducive to accommodating the edge heating area of the heating device in the space below the first connecting surface 210 to better supply heat to the edge area of the top plate through the thinned area, and is also conducive to ensuring that the first connecting surface 210 and the second connecting surface 220 have a certain thickness to strengthen the support strength of the bearing base.

[0057] In optional embodiments, continuing to refer to Figure 2 , the first connecting surface 210 and the bottom surface of the top plate 110, and the inner side wall of the cylindrical side plate 120 are smoothly transitioned and meet the N-order derivative continuous relationship, 0 < N ≤ 3, N is an integer, for example, 1, 2 or 3. Taking the surface structure near the intersection between the first connecting surface 210 and the top plate 110 as an example, it is smoothly transitioned without shape mutation. It can be understood that the higher the order, the smoother the surface transition, further ensuring the structural continuity of the internal junction of the base carrier.

[0058] In optional embodiments, continuing to refer to Figure 2 , the second connecting surface 220 and the top surface of the top plate 110, and the outer side wall of the cylindrical side plate 120 are smoothly transitioned and meet the N-order derivative continuous relationship; wherein, 0 < N ≤ 3, N is an integer, for example, 1, 2 or 3. Taking the surface structure near the intersection between the second connecting surface 220 and the top plate 110 as an example, it is smoothly transitioned without shape mutation. It can be understood that the higher the order, the smoother the surface transition, further ensuring the structural continuity of the external junction of the base carrier.

[0059] In some embodiments, referring to Figure 1 and Figure 2 , the top plate 110 and the cylindrical side plate 120 are integrally formed structures, so that the top plate 110 and the cylindrical side plate 120 are seamlessly connected, on the one hand, reducing the use of joints and connecting pieces, thereby enhancing the overall structural strength of the base carrier 10, which can better resist external pressure and impact force; on the other hand, the integrally formed structure can also reduce manual assembly and welding steps, thereby reducing production cost and time.

[0060] In some embodiments, the top plate 110 and the cylindrical side plate 120 are both made of graphite, and the susceptor carrier 10 is formed as an integrated graphite cover. In optional embodiments, the surface of the susceptor carrier 10 is coated with a high-temperature resistant coating to improve the service life of the susceptor carrier 10 in a high-temperature environment for a long time. In optional embodiments, the surface of the susceptor carrier 10 is coated with an anti-corrosion coating, such as a silicon carbide coating, to reduce or avoid structural damage or stress cracking caused by corrosion of the surface by corrosive process gases.

[0061] Embodiment Two

[0062] Referring to Figures 3 to 5 The embodiment provides a vapor phase growth device.

[0063] The vapor phase growth device provided by the embodiment includes a reaction cavity and a susceptor carrier arranged in the reaction cavity. The susceptor carrier is the susceptor carrier 10 provided in Embodiment One. The susceptor carrier 10 is used to carry a susceptor, such as a graphite susceptor, and the susceptor is provided with a recess for placing a substrate. The vapor phase growth device can be, for example, a vapor deposition device, in particular, a chemical vapor deposition (CVD) device or a physical vapor deposition (PVD) device. The vapor deposition device can be, for example, a plasma-enhanced chemical vapor deposition (PECVD) device, a metal-organic chemical vapor deposition (MOCVD) device, etc. The raw material gas can be selected according to the type of material required for depositing a thin film.

[0064] The embodiment is described by taking the MOCVD device as an example. It can be understood that the device is only exemplary and does not limit the technical solutions provided by the embodiment.

[0065] In a conventional vapor phase growth device, the resistive heater not only transmits heat to the susceptor but also dissipates heat to the reaction space. The heat provided by the resistive heater is lost, which makes the temperature of the outer circle of the substrate lower than that of the inner circle, which is not conducive to the uniformity of the substrate surface temperature. In addition, the corrosive reaction gas in the III-group organic compound and the gaseous V-group hydride also has an adverse effect on the heating element of the resistive heater. The vapor phase growth device provided by the embodiment optimizes the layout of the heating device 300 by using the susceptor carrier 10 provided in Embodiment One, so as to reduce heat loss and improve the heating effect.

[0066] Referring to Figure 5The heating device 300 is arranged below the top plate 110 of the susceptor carrier 10 to provide heat to the carrier susceptor and the substrate placed on the susceptor carrier 10. The heating device 300 comprises a first heating portion 310 and a second heating portion 320 surrounding the first heating portion 310. At least part of the second heating portion 320 is arranged below the first connecting surface 210 and is arranged along the curvature of the first connecting surface 210. Since the first connecting surface 210 is formed as a curved surface and the top of the first connecting surface 210 is higher than the bottom surface of the top plate 110, i.e. a concave accommodating space is formed upward in the three-dimensional space to accommodate part of the heating device 300, the problem of uneven heat distribution between the center and the edge of the conventional vapor phase growth device caused by the horizontal arrangement of the heating device is improved. At least part of the second heating portion 320 is located in the accommodating space below the first connecting surface 210, so that the top of the second heating portion 320 is higher than the height of the first heating portion 310. It can be understood that the first heating portion 310 is in a conventional horizontal installation form, and the first heating portion 310 always maintains the same height along the radial direction thereof. Further, taking the intersection of the first connecting surface 210 and the bottom surface of the top plate 110 and the intersection of the first connecting surface 210 and the inner wall of the cylindrical side plate 120 as the boundary, the second heating portion 320 is arranged to extend radially along the surface of the first connecting surface 210, and the second heating portion 320 is entirely located in the accommodating space below the first connecting surface 210 to provide more heat to the peripheral region of the top plate 110 than to the inner region, to concentrate heat on the inner region of the susceptor carrier 10, prevent heat loss, and ensure that the vapor deposition reaction temperature is uniform and controllable.

[0067] In some embodiments, referring to Figure 3The gas-phase growth device further comprises a sleeve 400 sleeved outside the cylindrical side plate 120, and a gap is formed between the sleeve 400 and the cylindrical side plate 120 to form a flow guide channel, the flow guide channel circumscribes a purge gas supply device 500, and the purge gas supply device 500 has a gas supply end in communication with the flow guide channel to provide purge gas into the flow guide channel to avoid deposition of reaction byproducts outside the cylindrical side plate 120, thereby avoiding contamination of the substrate by the reaction byproducts. In optional embodiments, the purge gas supply device 500 can be arranged at any position on the outer wall of the sleeve 400, such as the middle, lower middle or bottom. When the purge gas supply device 500 is arranged at the middle position on the outer wall of the sleeve 400, the purge gas flow enters the flow guide channel from the gas supply end, flows in both upward and downward directions of the flow guide channel, and is transported into the reaction chamber through the upper opening and the lower opening of the flow guide channel, respectively, so that the gas flow disturbance exists on the outer wall of the cylindrical side plate 120 within the surrounding range of the flow guide channel, preventing deposition of the reactants; when the purge gas supply device 500 is arranged at the bottom position on the outer wall of the sleeve 400, the purge gas flow enters the flow guide channel from the gas supply end, flows upward along the bottom of the flow guide channel, and is transported into the reaction chamber through the upper opening of the flow guide channel, achieving the protection effect on the outer wall of the cylindrical side plate 120. Further, the width of the flow guide channel between the sleeve 400 and the cylindrical side plate 120 is always kept at an equal interval to form a uniform and stable purge gas flow. It can be understood that the arrangement position and height of the purge gas supply device 500 do not limit the technical solutions of the embodiments.

[0068] In some embodiments, the sleeve 400 is a corrosion-resistant sleeve, such as a quartz sleeve. In optional embodiments, the height of the sleeve 400 is lower than the top surface of the top plate 110 to avoid affecting the disassembly and transmission process of the carrier pedestal.

[0069] Further, the purge gas is an inert gas, such as argon.

[0070] In some embodiments, continuing to refer to Figure 3 The gas-phase growth device further comprises a reflector plate 700 and an electrode plate 800, both of which are located inside the pedestal carrier 10 and are arranged below the heating device 300 in sequence. The reflector plate 700 is made of a material with high temperature stability, high purity and low deformation, such as PBN (Pyrolytic Boron Nitride) and the like, and its main function is to reflect the heat emitted by the heating device 300 back to the heating area to ensure that the substrate can obtain sufficient heat, thereby improving the heat utilization rate and the accuracy of temperature control. At the same time, the reflector plate 700 can also block the heat transfer to the non-heating area to a certain extent, helping to maintain the temperature gradient inside the reaction chamber of the vapor deposition equipment. Further, the height of the reflector plate 700 is located in the upper middle part of the internal cavity of the pedestal carrier 10 to improve its reflection efficiency of heat.

[0071] In some embodiments, referring to Figure 4 A sealing structure 600 is arranged at the bottom of the base carrier 10 and the bottom of the reaction cavity to form a closed sealed cavity. The sealing structure 600 can enclose the heating device 300, such as a resistance heater, in a specific space, reducing or avoiding the influence of corrosive process gas on the resistance heater. In an optional embodiment, the sealing structure 600 includes a sealing glue layer arranged between the bottom of the cylindrical side plate 120 and the surface of the bottom of the reaction cavity. The sealing glue layer can be a high-temperature-resistant sealing glue to enhance the sealing effect. In an optional embodiment, the sealing structure 600 further includes a connecting device for fixing the cylindrical side plate 120 to the bottom of the reaction cavity. The connecting device is fixedly installed at the outer wall of the cylindrical side plate 120 and the surface of the bottom of the reaction cavity at both ends, and both ends are sealed ends. Further, a sealing glue layer is arranged in the gap between the connecting device and the cylindrical side plate 120. The connecting device and the plurality of sealing glue layers work together to further enhance the sealing effect of the base carrier 10.

[0072] In summary, the technical scheme provided by the present application can thin the intersection of the top plate and the cylindrical side plate of the base carrier, raise the edge mounting height of the heating device, and provide more heat to the peripheral area of the top plate than to the internal area by arranging the heating device at the thinned edge position below the top plate of the base carrier. The central area is heated, thereby providing a more uniform reaction temperature for the carrier base and the substrate. In addition, by arranging the sealing structure at the bottom of the cylindrical side plate, the problem of affecting the heating effect caused by the corrosion of the heating device due to the influence of the process gas can be significantly reduced or avoided. Therefore, it is of great significance to manufacture semiconductor devices with excellent performance by the technical scheme of the present application.

[0073] The above embodiments are only illustrative of the principles and effects of the present application, and are not intended to limit the present application. Any person skilled in the art can modify or change the above embodiments without departing from the spirit and scope of the present application. Therefore, all equivalent modifications or changes made by those skilled in the art without departing from the spirit and technical idea disclosed by the present application should be covered by the claims of the present application.

Claims

1. A susceptor carrier, characterized by, The base carrier comprises a top plate and a cylindrical side plate, the cylindrical side plate is arranged around the edge of the top plate and extends away from the top plate to form a cover with a bottom opening, wherein: The bottom surface of the top plate meets the inner wall of the cylindrical side plate and forms a ring-shaped first connecting surface, the top of the first connecting surface is higher than the bottom surface of the top plate; The top surface of the top plate meets the outer wall of the cylindrical side plate and forms a ring-shaped second connecting surface; The first connecting surface is recessed towards the second connecting surface; The average thickness between the first connecting surface and the second connecting surface is less than the average thickness of the top plate.

2. The susceptor carrier of claim 1, wherein, The top plate and the cylindrical side plate are integrally formed.

3. The susceptor carrier of claim 1, wherein, The first connecting surface and the second connecting surface are continuous curved surface structures.

4. The susceptor carrier of claim 3, wherein, The curvature of the first connecting surface is greater than the curvature of the second connecting surface.

5. The base carrier according to claim 1, wherein: The first connecting surface and the bottom surface of the top plate, and the inner side wall of the cylindrical side plate are smoothly transitioned and meet the N-order derivative continuous relationship; The second connecting surface and the top surface of the top plate, and the outer side wall of the cylindrical side plate are smoothly transitioned and meet the N-order derivative continuous relationship; wherein 0 6. The susceptor carrier of claim 1, wherein, The average thickness between the first connecting surface and the second connecting surface is greater than the average thickness of the cylindrical side plate.

7. A vapor phase growth apparatus characterized by comprising: The base carrier comprises a reaction cavity and a base carrier arranged inside the reaction cavity; further comprising a heating device, the base carrier is any one of claims 1-6, the base carrier comprises a top plate and a cylindrical side plate, the cylindrical side plate is arranged around the edge of the top plate and extends away from the top plate to form a cover with a bottom opening, the heating device is arranged inside the cover and below the top plate.

8. The vapor phase growth apparatus according to claim 7, wherein The bottom surface of the top plate meets the inner wall of the cylindrical side plate and forms a ring-shaped first connecting surface, the heating device comprises a first heating part, and a second heating part surrounding the first heating part; wherein at least part of the second heating part is arranged below the first connecting surface and arranged according to the curvature of the first connecting surface; at least part of the second heating part is higher than the height of the first heating part.

9. The vapor phase growth apparatus according to claim 7, wherein Further comprising: A sleeve is arranged outside the cylindrical side plate and has a gap with the cylindrical side plate to form a flow guide channel, the height of the sleeve is lower than the height of the top surface of the top plate; A purge gas supply device has a gas supply end in communication with the flow guide channel to provide purge gas.

10. The vapor phase growth apparatus according to claim 7, wherein The bottom of the base carrier is connected to the bottom of the reaction cavity, and a sealing structure is arranged at the connection to strengthen the sealing relationship.

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