Growth equipment of monocrystalline silicon
By setting up an annular heat insulation component in the monocrystalline silicon growth equipment, the problem of excessively high temperature at the bottom of the crucible was solved, the oxygen content was reduced, and the photoelectric conversion efficiency and production quality of the monocrystalline silicon wafers were improved.
Patent Information
- Application Number
- CN202423320448.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-31
- Publication Date
- 2025-12-30
- Estimated Expiration
- 2034-12-31
AI Technical Summary
Existing technologies are unable to effectively reduce the temperature at the bottom of the crucible, resulting in excessively high oxygen content in the silicon rod, which affects the photoelectric conversion efficiency and cost of the single-crystal silicon wafer.
In the monocrystalline silicon growth equipment, an annular heat insulation component is installed, extending upward to the lower side of the heater and beyond the bottom of the crucible support. This increases the heat insulation at the bottom of the thermal field, reduces the heat radiation from the heater to the bottom of the crucible, and lowers the temperature at the bottom of the crucible.
It effectively reduces the temperature at the bottom of the crucible, reduces the formation of silicon monoxide, lowers the oxygen content in the silicon rod, improves the quality of the crystal rod, and enhances the production quality of monocrystalline silicon wafers.
Smart Images
Figure CN223738210U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of monocrystalline silicon technology, and in particular to a monocrystalline silicon growth apparatus. Background Technology
[0002] Currently, with the pursuit of high photoelectric conversion efficiency and the requirement for cost reduction in solar energy technology, N-type monocrystalline silicon wafers are being widely used, and topcon (Tunnel Oxide Passivated Contact) technology is continuously developing. However, topcon cell technology produces a certain proportion of oxygen rings, requiring high oxygen content. Therefore, reducing the oxygen content in silicon rods has become a major technical challenge. The main method for reducing oxygen content is to lower the temperature of the inner surface of the crucible in contact with the silicon material, especially the temperature at the bottom of the crucible. Therefore, how to reduce the temperature at the bottom of the crucible is a problem that the industry urgently needs to solve.
[0003] In view of this, it is necessary to improve the existing monocrystalline silicon growth equipment to solve the above problems. Utility Model Content
[0004] The purpose of this invention is to provide a single-crystal silicon growth device that can effectively reduce the temperature at the bottom of the crucible and reduce the oxygen impurity content.
[0005] To achieve the above-mentioned objectives, this utility model provides a single-crystal silicon growth apparatus, comprising:
[0006] Crucible assembly, used to contain silicon material;
[0007] A heating assembly, disposed outside the crucible assembly to heat the silicon material contained within the crucible assembly, includes a first heater located on the periphery of the crucible assembly;
[0008] A heat insulation component is arranged in a ring shape on the outside of the crucible assembly and extends in the height direction. The heat insulation component extends upward to the lower side of the first heater and downward beyond the bottom end of the crucible support of the crucible assembly.
[0009] As a further improvement of this utility model, the single crystal silicon growth equipment further includes a heat insulation component disposed outside the crucible assembly. The heat insulation component includes a bottom heat insulation wall located on the lower side of the crucible assembly. The heat insulation component includes a first heat insulation ring supported on the bottom heat insulation wall. The first heat insulation ring extends upward from the bottom heat insulation wall beyond the top of the crucible support.
[0010] As a further improvement of this utility model, the heating assembly further includes a second heater located on the lower side of the crucible assembly, and the first heat insulation ring extends downward beyond the second heater.
[0011] As a further improvement of this utility model, the first heat insulation ring includes an upper heat insulation ring and a lower heat insulation ring connected vertically. The outer diameter of the upper heat insulation ring is not greater than the outer diameter of the first heater, the inner diameter of the upper heat insulation ring is greater than the outer diameter of the crucible assembly, and the upper heat insulation ring extends upward to the outer side of the crucible assembly.
[0012] As a further improvement of this utility model, the bottom end of the upper heat insulation ring is lower than the bottom end of the crucible support, and the inner diameter of the lower heat insulation ring is larger than the outer diameter of the crucible support.
[0013] As a further improvement of this utility model, in the vertical direction, the upper heat insulation ring is a straight cylinder with the same inner diameter and the same outer diameter, and the lower heat insulation ring is also a straight cylinder with the same inner diameter and the same outer diameter, and the upper heat insulation ring extends straight upward from the lower heat insulation ring.
[0014] As a further improvement of this utility model, the inner diameter and outer diameter of the upper heat insulation ring and the lower heat insulation ring are different. The outer diameter of the lower heat insulation ring is smaller than the inner diameter of the first heater. The first heat insulation ring also has a connecting ring that connects the upper heat insulation ring and the lower heat insulation ring.
[0015] As a further improvement of this utility model, the heat insulation assembly further includes a second heat insulation ring connected to the crucible support. The second heat insulation ring is located inside the lower heat insulation ring in the radial direction of the crucible assembly and at least partially overlaps the lower heat insulation ring in the height direction.
[0016] As a further improvement of this utility model, the crucible assembly has a support rod and a tray disposed at the top of the support rod, and the lower edge of the second heat insulation ring is not higher than the lower edge of the tray.
[0017] As a further improvement of this utility model, the heat insulation component is made of one or more materials selected from graphite, quartz, silicon nitride, alumina, ceramic materials, and graphite fiber.
[0018] The beneficial effects of this invention are as follows: The single-crystal silicon growth equipment of this invention provides a heat insulation component extending along the height direction on the outside of the crucible assembly. The heat insulation component extends upward to the lower side of the first heater and downward beyond the bottom end of the crucible support of the crucible assembly. By adding a heat insulation component at the bottom of the thermal field, the heat radiated from the first heater to the bottom of the crucible is effectively reduced, the temperature at the bottom of the crucible is lowered, the reaction between the crucible and molten silicon is slowed down, and the amount of silicon monoxide generated is significantly reduced. Thus, the oxygen content in the crystal rod is reduced without affecting the overall structure of the existing thermal field. Attached Figure Description
[0019] Figure 1This is a schematic diagram of the structure of the first embodiment of the single-crystal silicon growth equipment of this utility model.
[0020] Figure 2 This is a schematic diagram of the second embodiment of the single-crystal silicon growth apparatus of this utility model.
[0021] Figure 3 This is a schematic diagram of the third embodiment of the single-crystal silicon growth apparatus of this utility model.
[0022] In the picture:
[0023] 100. Equipment for growing monocrystalline silicon;
[0024] 1. Crucible assembly; 11. Crucible; 12. Crucible liner; 13. Crucible support; 14. Support rod; 15. Tray;
[0025] 2. Heating assembly; 21. First heater; 23. Second heater;
[0026] 3. Thermal insulation component; 31. First thermal insulation ring; 311. Upper thermal insulation ring; 312. Lower thermal insulation ring; 313. Connecting ring; 32. Second thermal insulation ring;
[0027] 4. Thermal insulation components; 41. Bottom thermal insulation wall; 42. Side thermal insulation wall;
[0028] 5. Furnace body. Detailed Implementation
[0029] The present invention will now be described in detail with reference to the embodiments shown in the accompanying drawings. However, these embodiments do not limit the present invention, and any structural, methodological, or functional modifications made by those skilled in the art based on these embodiments are included within the protection scope of the present invention.
[0030] The terms used herein, such as “up,” “down,” “left,” “right,” “front,” and “back,” indicating spatial relative position, are for illustrative purposes to describe the relationship of one feature relative to another, as shown in the accompanying drawings. It is understood that, depending on the product's placement, these terms may be intended to include different orientations besides those shown in the figures and should not be construed as limiting the claims. Furthermore, the descriptive term “horizontal” used herein is not entirely equivalent to being perpendicular to the direction of gravity and allows for a certain angle of inclination.
[0031] Please refer to Figures 1 to 3 The diagram shows various embodiments of the single-crystal silicon growth apparatus of this invention, wherein... Figure 1 This is a schematic diagram of the structure of the first embodiment of the single-crystal silicon growth apparatus 100 of this utility model. Figure 2 This is a schematic diagram of the second embodiment of the single-crystal silicon growth apparatus of this utility model. Figure 3 This is a schematic diagram of the third embodiment of the single-crystal silicon growth apparatus of this utility model.
[0032] Please refer to Figures 1 to 3 As shown, the single-crystal silicon growth apparatus 100 of this utility model includes:
[0033] Crucible assembly 1, which is used to contain silicon material;
[0034] Heating assembly 2, disposed outside the crucible assembly 1 to heat the silicon material contained in the crucible assembly 1, includes a first heater 21 located on the periphery of the crucible assembly 1;
[0035] The heat insulation component 3 is arranged in a ring shape on the outside of the crucible assembly 1 and extends in the height direction. The heat insulation component 3 extends upward to the lower side of the first heater 21 and extends downward beyond the bottom end of the crucible support 13 of the crucible assembly 1.
[0036] Thus, the single-crystal silicon growth equipment 100 of this utility model provides a heat insulation component 3 extending along the height direction on the outside of the crucible assembly 1, and the heat insulation component 3 extends upward to the lower side of the first heater 21 and downward beyond the bottom end of the crucible support 13 of the crucible assembly 1. By adding the heat insulation component 3 at the bottom of the thermal field, the heat radiated by the first heater 21 to the bottom of the crucible 11 is effectively reduced, the temperature at the bottom of the crucible 11 is lowered, the reaction between the crucible 11 and molten silicon is slowed down, and the amount of silicon monoxide generated is significantly reduced. Thus, the oxygen content in the crystal rod is reduced without affecting the overall structure of the existing thermal field.
[0037] In this invention, by adding the heat insulation component 3 below the first heater 21, the heat transfer from the first heater 21 to the crucible 11 is blocked, thereby reducing the bottom temperature of the crucible 11, reducing the reaction between the crucible 11 and the molten silicon, reducing the introduction of silicon monoxide, and achieving the purpose of reducing the oxygen content. Through the technical solution described in this invention, the bottom temperature of the crucible 11 can be reduced by more than 1K, and the oxygen content can be reduced by 1ppma.
[0038] In one embodiment of this invention, the monocrystalline silicon growth apparatus 100 further includes a furnace body 5, and the crucible assembly 1 is disposed within the furnace body 5 to contain silicon material. The crucible assembly 1 includes the crucible 11, a crucible base 12 located around the crucible 11, a crucible support 13 located at the bottom of the crucible 11, and a support rod 14 connected to the bottom of the crucible support 13. A tray 15 is provided at the top of the support rod 14. The monocrystalline silicon growth apparatus 100 of this invention reduces the oxygen release from the bottom of the crucible 11 by providing a heat insulation component 3 near the crucible support 13 of the crucible assembly 1, thereby reducing the oxygen content entering the crystal rod, significantly improving the quality of the crystal rod, and exhibiting a good oxygen reduction effect, effectively improving the production quality of monocrystalline silicon.
[0039] The single-crystal silicon growth apparatus 100 further includes a heat insulation component 4 disposed outside the crucible assembly 1. The heat insulation component 4 includes a bottom heat insulation wall 41 located below the crucible assembly 1. The heat insulation component 3 includes a first heat insulation ring 31 supported on the bottom heat insulation wall 41. The first heat insulation ring 31 extends upward from the bottom heat insulation wall 41 beyond the top of the crucible support 13, thereby effectively isolating the bottom of the crucible 11 from heat radiation, reducing the temperature at the bottom of the crucible 11, slowing down the reaction between the crucible 11 and molten silicon, and reducing the oxygen impurity content.
[0040] The heat insulation component 3 is located in the height direction between the first heater 21 and the bottom insulation wall 41. In this way, heat radiation is effectively blocked at the bottom of the crucible 11, avoiding problems such as excessive oxygen impurity content and poor crystal rod quality caused by excessively high temperature at the bottom of the crucible 11.
[0041] The heat insulation component 4 is located inside the furnace body 5 of the monocrystalline silicon growth equipment 100 to reduce the radiation of heat generated by the heating component 2 to the furnace wall. The heat insulation component 4 also includes a side heat insulation wall 42 located on the outer side of the crucible assembly 1 in the circumferential direction, the side heat insulation wall 42 surrounding the periphery of the crucible assembly 1.
[0042] In some embodiments of this utility model, the heating assembly 2 further includes a second heater 23 located below the crucible assembly 1, and the first heat insulation ring 31 extends downward beyond the second heater 23 so as to simultaneously isolate the outward heat radiation of the second heater 23 through the first heat insulation ring 31, thereby better avoiding the problem of excessive oxygen impurity content caused by excessively high temperature at the bottom of the crucible 11.
[0043] The first heat insulation ring 31 also has a groove formed below it, through which the first heater 21 is connected to the main electrode of the single crystal silicon growth device 100.
[0044] like Figures 1 to 3As shown, in the first to third embodiments of this utility model, the first heat insulation ring 31 includes an upper heat insulation ring 311 and a lower heat insulation ring 312 connected vertically. The outer diameter of the upper heat insulation ring 311 is not greater than the outer diameter of the first heater 21, the inner diameter of the upper heat insulation ring 311 is greater than the outer diameter of the crucible assembly 1 crucible 1 crucible 1 crucible 1 crucible 1 crucible 1 crucible 12 ...
[0045] Furthermore, the bottom end of the upper heat insulation ring 311 is lower than the bottom end of the crucible support 13, and the inner diameter of the lower heat insulation ring 312 is larger than the outer diameter of the crucible support 13.
[0046] Please refer to Figure 1 As shown, in the vertical direction, the upper heat insulation ring 311 is a straight cylinder with the same inner and outer diameters, and the lower heat insulation ring 312 is also a straight cylinder with the same inner and outer diameters. In the first embodiment of this utility model, the upper heat insulation ring 311 extends straight upward from the lower heat insulation ring 312, that is, the inner diameter of the upper heat insulation ring 311 is the same as the inner diameter of the lower heat insulation ring 312, and the outer diameter of the upper heat insulation ring 311 is also the same as the outer diameter of the lower heat insulation ring 312. In this embodiment, the material of the first heat insulation ring 31 can be CC fiber material.
[0047] like Figure 2 and Figure 3 As shown, in the second and third embodiments of this utility model, the inner diameter and outer diameter of the upper heat insulation ring 311 and the lower heat insulation ring 312 are different. The outer diameter of the lower heat insulation ring 312 is smaller than the inner diameter of the first heater 21. The first heat insulation ring 31 also has a connecting ring 313 that connects the upper heat insulation ring 311 and the lower heat insulation ring 312.
[0048] Specifically, such as Figure 2 As shown, in the second embodiment of this utility model, the connecting ring 313 is arc-shaped so that the upper heat insulation ring 311 and the connecting ring 313 are connected to form a bowl-shaped structure, and the bowl-shaped structure is adapted to the outer contour of the crucible assembly 1. In this case, the upper heat insulation ring 311 and the connecting ring 313 are made of CC fiber material, and the lower heat insulation ring 312 is made of graphite material.
[0049] like Figure 3 As shown, in the third embodiment of this utility model, the connecting ring 313 extends straight in the radial direction of the crucible assembly 1, that is, the connecting ring 313 is arranged parallel to the horizontal plane. In this embodiment, the upper and lower heat insulation rings 311 and 312 are made of carbon ceramic material, and the connecting ring 313 is made of CC fiber material.
[0050] The upper heat insulation ring 311 and the connecting ring 313 are provided with grooves at the corresponding positions of the feet of the first heater 21. The grooves have a depth in the radial direction, thereby increasing the distance between the upper heat insulation ring 311 and the connecting ring 313 at the corresponding positions of the feet of the first heater 21, and preventing arcing between the first heater 21 and the upper heat insulation ring 311 and the connecting ring 313. Preferably, the recess depth of the grooves in the radial direction is 15mm.
[0051] The heat insulation assembly 3 further includes a second heat insulation ring 32 connected to the crucible support 13. The second heat insulation ring 32 is located inside the lower heat insulation ring 312 in the radial direction of the crucible assembly 1, and at least partially overlaps the lower heat insulation ring 312 in the height direction. Figure 3 As can be seen, the lower section of the second heat insulation ring 32 and the lower heat insulation ring 312 overlap in the height direction, and the upper section of the second heat insulation ring 32 and the upper heat insulation ring 311 overlap in the height direction, thereby achieving double-layer heat radiation isolation for the bottom of the crucible 11, better preventing the bottom temperature of the crucible 11 from being too high, and avoiding the problem of excessive oxygen impurity content caused by excessive bottom temperature of the crucible 11.
[0052] Furthermore, in this embodiment, the lower edge of the second heat insulation ring 32 is not higher than the lower edge of the tray 15 disposed at the top of the support rod 14. That is, the lower edge of the second heat insulation ring 32 is flush with or lower than the lower edge of the tray 15. Furthermore, in some embodiments of this utility model, the second heat insulation ring 32 is made of porous ceramic material and is connected to the bottom of the crucible support 13 by fasteners (not shown).
[0053] In some embodiments of this utility model, the heat insulation component 3 is made of one or more materials selected from graphite, quartz, silicon nitride, alumina, ceramic materials, and graphite fiber, thereby having good high temperature resistance, effectively isolating the heat generated by the first heater 21 from radiating downwards, reducing the temperature at the bottom of the crucible 11, and reducing the content of oxygen impurities.
[0054] In summary, in this invention, the single-crystal silicon growth equipment 100 provides a heat insulation component 3 extending along the height direction on the outside of the crucible assembly 1, such that the heat insulation component 3 extends upward to the lower side of the first heater 21 and downward beyond the bottom end of the crucible support 13 of the crucible assembly 1. By adding the heat insulation component 3 at the bottom of the thermal field, the heat radiated by the first heater 21 to the bottom of the crucible 11 is effectively reduced, the temperature at the bottom of the crucible 11 is lowered, the reaction between the crucible 11 and molten silicon is slowed down, and the amount of silicon monoxide generated is significantly reduced. Thus, the oxygen content in the crystal rod is reduced without affecting the overall structure of the existing thermal field.
[0055] It should be understood that although this specification describes embodiments, not every embodiment contains only one independent technical solution. This way of describing the specification is only for clarity. Those skilled in the art should regard the specification as a whole. The technical solutions in each embodiment can also be appropriately combined to form other embodiments that can be understood by those skilled in the art.
[0056] The detailed descriptions listed above are merely specific descriptions of feasible implementations of this utility model, and are not intended to limit the scope of protection of this utility model. All equivalent implementations or modifications made without departing from the spirit of this utility model should be included within the scope of protection of this utility model.
Claims
1. A single-crystal silicon growth apparatus, characterized in that, The single crystal silicon growth apparatus comprises: a crucible assembly for containing silicon material; a heating assembly disposed outside the crucible assembly for heating the silicon material contained in the crucible assembly, the heating assembly comprising a first heater located at the periphery of the crucible assembly; a heat insulation assembly disposed annularly outside the crucible assembly and extending in the height direction, the heat insulation assembly extending upward beyond the lower end of a crucible support of the crucible assembly and extending downward beyond the lower side of the first heater.
2. The apparatus for growing single crystal silicon according to Claim 1, wherein: The single crystal silicon growth apparatus further comprises a heat preservation assembly disposed outside the crucible assembly, the heat preservation assembly comprising a bottom heat preservation wall located at the lower side of the crucible assembly, and the heat insulation assembly comprising a first heat insulation ring supported on the bottom heat preservation wall, the first heat insulation ring extending upward beyond the upper end of the crucible support from the bottom heat preservation wall.
3. The apparatus for growing single crystal silicon according to Claim 2, wherein: The heating assembly further comprises a second heater located at the lower side of the crucible assembly, and the first heat insulation ring extends downward beyond the second heater.
4. The apparatus for growing single silicon crystals as claimed in claim 2, wherein: The first heat insulation ring comprises an upper heat insulation ring and a lower heat insulation ring connected in series in the up-down direction, the outer diameter of the upper heat insulation ring is not greater than the outer diameter of the first heater, the inner diameter of the upper heat insulation ring is greater than the outer diameter of the crucible support, and the upper heat insulation ring extends upward to the outside of the crucible support.
5. The apparatus for growing single silicon crystals as claimed in claim 4, wherein: The bottom end of the upper heat insulation ring is lower than the bottom end of the crucible support, and the inner diameter of the lower heat insulation ring is greater than the outer diameter of the crucible support.
6. The apparatus for growing single silicon crystals as recited in claim 4, wherein: In the up-down direction, the upper heat insulation ring is in a straight cylindrical shape with the same inner diameter and the same outer diameter, the lower heat insulation ring is also in a straight cylindrical shape with the same inner diameter and the same outer diameter, and the upper heat insulation ring extends straight upward from the lower heat insulation ring.
7. The apparatus for growing single silicon crystals as claimed in claim 4, wherein: The inner diameter and the outer diameter of the upper heat insulation ring and the lower heat insulation ring are different, the outer diameter of the lower heat insulation ring is smaller than the inner diameter of the first heater, and the first heat insulation ring further comprises a connecting ring connecting the upper heat insulation ring and the lower heat insulation ring.
8. The apparatus for growing single silicon crystals as claimed in claim 4, wherein: The heat insulation assembly further comprises a second heat insulation ring connected to the crucible support, the second heat insulation ring is located inside the lower heat insulation ring in the radial direction of the crucible assembly and at least partially overlaps the lower heat insulation ring in the height direction.
9. The apparatus for growing single silicon crystals as claimed in claim 8, wherein: The crucible assembly has a support rod and a tray disposed at the top end of the support rod, and the lower end of the second heat insulation ring is not higher than the lower end of the tray.
10. The apparatus for growing single silicon crystals as claimed in any one of claims 1 to 9, wherein: The heat insulation assembly is made of one or more of graphite, quartz, silicon nitride, alumina, ceramic material, and graphite fiber.