Wafer purging device and wafer purging system

Abstract

The utility model relates to the technical field of laser processing, in particular to a wafer purging device and a wafer purging system. The wafer blowing device comprises a light barrier, a plurality of shielding gas blowing mechanisms and a plurality of gas blowing mechanisms, and the plurality of shielding gas blowing mechanisms and the plurality of gas blowing mechanisms are arranged by taking the laser outlet as a geometric center. According to the wafer blowing device and the wafer blowing system provided by the utility model, pressurized gas is blown to the surface of the wafer through the gas blowing mechanism, so that the tightness of the wafer is improved; the shielding gas is blown to the surface of the wafer through the shielding gas blowing mechanism, so that the surface of the wafer is covered with the shielding gas, and the oxygen content concentration of the machining area is reduced; besides, in the arrangement mode with the laser outlet as the geometric center, the shielding gas can form a gas curtain around the center of a light spot, the shielding gas can be blown outwards along the surface of the wafer, a micro-positive pressure environment is formed on the surface of the wafer, most external environment air can be prevented from entering a laser machining area, and it is guaranteed that the oxygen content meets the requirement of the machining technology.

Description

TECHNICAL FIELD

[0001] The utility model relates to laser processing technical field especially relates to a wafer blowing device and wafer blowing system. BACKGROUND

[0002] In the process of laser back annealing, according to the requirement of different processes, the oxygen content of wafer surface needs to be controlled, so most of the equipment will be configured with gas blowing system, that is, nitrogen or argon is used to blow the wafer surface to reduce the oxygen content, so as to improve the wafer processing quality. But because the laser energy acts on the back of the wafer, it is converted into heat and conducted to the front of the wafer. When the wafer is annealed on the back after thinning below 200 μm, more heat will be conducted to the front of the wafer, causing the polyimide glue (i.e. PI glue) on the front to melt. And because the wafer is in close contact with the bearing table, the melted PI glue will be extruded by the surface of the bearing table and deformed, forming a point-like appearance defect. In order to reduce this phenomenon, the adsorption force of the wafer needs to be reduced, but as the adsorption force decreases, when the wafer moves to the edge along the orthogonal trajectory, the blowing system at the light outlet position of the equipment has a chance to blow the wafer away, causing the machine to stop.

[0003] In the prior art, coaxial blowing design is generally used: the optical axis coincides with the mechanical axis of the gas outlet, and the blowing direction of the protective gas is consistent with the propagation direction of the laser. During processing, the XY axis motion table drives the wafer to move, the laser irradiates the wafer through the gas outlet, and the coaxial blowing system blows nitrogen or argon to ensure that the oxygen content in the processing area is controlled within the range required by the process. At the same time, it can reduce the damage of volatile matter on the wafer surface to the protective lens during processing, thereby prolonging the service life of the lens. But the above blowing method and equipment have the following defects:

[0004] When the laser scans the edge, the coaxial blowing will also blow high-speed airflow to the edge of the wafer. According to the simulation results and actual experience, the gas will continuously impact the edge of the wafer, generating an oblique downward impact force; at the same time, the adsorption pressure of the wafer is usually controlled by a proportional valve, and in some states, the adsorption pressure is not compensated in time, and the wafer will be blown away under the impact of the blowing gas. Therefore, coaxial blowing is suitable for high adsorption force (i.e. above-10 kPa) working conditions, but it will have unstable factors when used in low adsorption force working conditions. UTILITY MODEL CONTENTS

[0005] The utility model provides a wafer blowing device and wafer blowing system to solve the defect that the wafer is easily blown away under the impact of the blowing gas and the working state is unstable in the prior art under low adsorption force working conditions.

[0006] The utility model provides a wafer blowing device, which comprises:

[0007] The light shield plate has a laser outlet;

[0008] A plurality of protective gas blowing mechanisms are arranged around the laser outlet as a geometric center, and are used to blow protective gas to the wafer surface.

[0009] A plurality of gas blowing mechanisms are arranged around the laser outlet as a geometric center, and are used to blow pressurized gas to the wafer surface.

[0010] According to the wafer blowing device provided by the utility model, the protective gas blowing mechanism comprises:

[0011] A protective gas blowing plate is arranged around the laser outlet as a geometric center.

[0012] A protective gas connector is connected with the protective gas blowing plate, and is used to introduce protective gas into the protective gas blowing plate.

[0013] According to the wafer blowing device provided by the utility model, the protective gas blowing mechanism further comprises: a first gas valve connected with the protective gas connector, and the output state of the protective gas is controlled through the opening and closing state of the first gas valve.

[0014] According to the wafer blowing device provided by the utility model, the gas blowing mechanism comprises:

[0015] A gas blowing fixing plate is arranged around the laser outlet as a geometric center.

[0016] A gas blowing connector is connected with the gas blowing fixing plate, and is used to introduce pressurized gas into the gas blowing fixing plate.

[0017] A plurality of gas outlets are connected with the protective gas connector, and are used to blow and clean the protective gas to the wafer surface.

[0018] According to the wafer blowing device provided by the utility model, the gas blowing mechanism further comprises: a second gas valve connected with the gas blowing connector, and the output state of the pressurized gas is controlled through the opening and closing state of the second gas valve.

[0019] According to the wafer blowing device provided by the utility model, the geometric center of one of the protective gas blowing mechanisms coincides with the geometric center of the laser outlet, and the remaining protective gas blowing mechanisms are arranged around the laser outlet as a geometric center to form a first rectangular arrangement structure.

[0020] A plurality of gas blowing mechanisms are arranged around the laser outlet as a geometric center to form a second rectangular arrangement structure.

[0021] According to the wafer blowing device provided by the utility model, the first rectangular arrangement structure and the second rectangular arrangement structure are arranged at an angle of 45°.

[0022] The five protection gas blowing mechanisms are arranged with one of the protection gas blowing mechanisms as the geometric center of the other four protection gas blowing mechanisms, and the other four protection gas blowing mechanisms are arranged at the right-angle ends of the first rectangular arrangement structure.

[0023] The four gas blowing mechanisms are arranged at the right-angle ends of the second rectangular arrangement structure.

[0024] According to the wafer blowing device, the blowing pressure of the gas blowing mechanism is less than the blowing pressure of the protection gas blowing mechanism.

[0025] The utility model also provides a wafer blowing system, include: the wafer blowing device among the above-mentioned embodiment of the utility model.

[0026] According to the wafer blowing system, the position detection device is used for detecting the position of the wafer and opening or closing the first gas valve on the protection gas blowing mechanism and / or the second gas valve on the gas blowing mechanism according to the position of the wafer.

[0027] The utility model provides a wafer blowing device, it includes: light barrier, a plurality of protection gas blowing mechanism and a plurality of gas blowing mechanism, light barrier has laser export, a plurality of protection gas blowing mechanism, with laser export is geometric center arrangement, is used for blowing out protection gas to wafer surface, a plurality of gas blowing mechanism, with laser export is geometric center arrangement, is used for blowing out pressurized gas to wafer surface to increase the fastening between wafer and motion platform.

[0028] Further, the wafer blowing system has the same advantages as above because it comprises the wafer blowing device in the above-mentioned embodiments. BRIEF DESCRIPTION OF DRAWINGS

[0029] In order to more clearly illustrate the technical solutions of the present application or the prior art, the following will briefly introduce the drawings needed in the embodiments or prior art description. Obviously, the drawings in the following description are some embodiments of the present application, and for those skilled in the art, other drawings can also be obtained without creative labor on the basis of these drawings.

[0030] Figure 1 is a top view of the wafer purging device provided in one of the embodiments of the present application.

[0031] Figure 2 is a side view provided in one of the embodiments of the present application.

[0032] Reference signs:

[0033] 1: light shield plate; 2: protective gas purging mechanism; 21: protective gas purging plate; 22: protective gas joint; 3: gas purging mechanism; 31: gas purging fixed plate; 32: gas purging joint. DETAILED DESCRIPTION

[0034] In order to make the purpose, technical scheme and advantages of the present application more clear, the technical scheme of the present application will be described clearly and completely in the following with reference to the drawings in the present application. Obviously, the described embodiments are some embodiments of the present application, not all embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor are within the scope of protection of the present application.

[0035] In the description of the present embodiment, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present embodiment and simplifying the description, and therefore cannot be understood as indicating or implying that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as limiting the present embodiment.

[0036] In addition, the terms "first" and "second" are only for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the technical features indicated. Therefore, the features defined with "first" and "second" can explicitly or implicitly include at least one of the features. In the description of the present embodiment, the meaning of "multiple" is at least two, such as two, three, etc., unless otherwise specifically limited.

[0037] In this embodiment, unless otherwise explicitly specified and limited, the terms "arranged", "mounted", "connected", "linked", "fixed" and the like should be understood in a broad sense, for example, can be fixed connection, can also be detachable connection, or integrated; can be mechanical connection, can also be electrical connection; can be directly connected, can also be indirectly connected through an intermediate medium, can be the internal communication of two elements or the interaction relationship of two elements, unless otherwise explicitly limited. For those skilled in the art, the specific meaning of the above terms in this embodiment can be understood according to the specific circumstances.

[0038] In the embodiments of the present application, unless otherwise explicitly specified and limited, the first feature is "on" or "under" the second feature. The first and second features can be in direct contact, or the first and second features can be in indirect contact through an intermediate medium. Moreover, the first feature can be above or obliquely above the second feature, or it can only mean that the horizontal height of the first feature is higher than that of the second feature. The first feature can be below or obliquely below the second feature, or it can only mean that the horizontal height of the first feature is less than that of the second feature.

[0039] The following will be described in detail Figures 1-2 A wafer blowing device is described. The wafer blowing device comprises: a light shield plate 1, a plurality of protective gas blowing mechanisms 2 and a plurality of gas blowing mechanisms 3.

[0040] The light shield plate 1 has a laser outlet; the plurality of protective gas blowing mechanisms 2 are arranged around the laser outlet as the geometric center, and are used to blow protective gas to the surface of the wafer; and the plurality of gas blowing mechanisms 3 are arranged around the laser outlet as the geometric center, and are used to blow pressurized gas to the surface of the wafer to increase the tightness between the wafer and the moving table.

[0041] Specifically, the light shield plate 1 is provided with a laser outlet, and the laser is irradiated onto the wafer through the laser outlet. Optionally, the laser outlet can be located at the geometric center position of the light shield plate 1. A plurality of protective gas blowing mechanisms 2 and a plurality of gas blowing mechanisms 3 are arranged around the laser outlet, and the arrangement structure formed by the plurality of protective gas blowing mechanisms 2 is arranged around the laser outlet as the geometric center, and the arrangement structure formed by the plurality of gas blowing mechanisms 3 is arranged around the laser outlet as the geometric center.

[0042] The gas blowing mechanism 3 is around the laser outlet and blows pressurized gas to the surface of the wafer, which increases the tightness of the whole wafer by increasing the gas pressure in this area, avoids the wafer from being blown away during the blowing process, and does not affect the adsorption force of the wafer on the laser processing position. Even if the wafer is in a low adsorption state, the appearance effect of the front surface of the wafer after back annealing can be ensured.

[0043] The protective gas blowing mechanism 2 is arranged at the periphery of the laser outlet and blows the protective gas to the wafer surface to cover the wafer surface and reduce the oxygen content concentration of the processing area.

[0044] Generally, to minimize the influence of the gas blowing mechanism 3 on the wafer surface, the outlet pressure of the pressurized gas of the gas blowing mechanism 3 is lower than the outlet pressure of the protective gas of the protective gas blowing mechanism 2. The protective gas can be an inert gas such as nitrogen or argon, and the pressurized gas should also be the same kind of protective gas.

[0045] In addition, the arrangement of the protective gas blowing mechanism 2 and the gas blowing mechanism 3 is arranged around the laser outlet as the geometric center, and the protective gas can form a gas curtain around the spot center, which can not only blow the protective gas outward along the wafer surface to form a micro-positive pressure environment on the wafer surface, but also block most of the ambient air from entering the laser processing area to ensure that the oxygen content meets the processing requirements. It can be understood that the protective gas can be blown outward along the wafer surface by adjusting the outlet position and angle of the protective gas blowing mechanism 2.

[0046] It can be seen that the wafer surface oxygen content is controlled by the protective gas blowing mechanism 2, and the wafer is fixed by increasing the local pressure of the wafer by the gas blowing mechanism 3, which can blow the wafer in a low adsorption state compared with the commonly used coaxial blowing scheme.

[0047] The wafer blowing device provided by the utility model has the advantages that the pressurized gas is blown to the wafer surface by the gas blowing mechanism 3, the wafer is fixed, even if the wafer is in a low adsorption state, the appearance effect of the front surface of the wafer after back annealing can be ensured; the protective gas is blown to the wafer surface by the protective gas blowing mechanism 2, the wafer surface is covered by the protective gas, and the oxygen content concentration of the processing area is reduced; in addition, the arrangement of the laser outlet as the geometric center, the protective gas can form a gas curtain around the spot center, which can not only blow the protective gas outward along the wafer surface to form a micro-positive pressure environment on the wafer surface, but also block most of the ambient air from entering the laser processing area to ensure that the oxygen content meets the processing requirements.

[0048] In one of the embodiments of the utility model, the protective gas blowing mechanism 2 includes: protective gas blowing plate 21, protective gas joint 22 and multiple air outlets. Among them, the protective gas blowing plate 21 is arranged with laser outlet as the geometric center;Protective gas joint 22 is connected with protective gas blowing plate 21, and is used for introducing protective gas into protective gas blowing plate 21;Multiple air outlets are connected with protective gas joint 22, and blow out and blow off protective gas to wafer surface. Specifically, the protective gas blowing plate 21 is a circular plate structure, four protective gas joints 22 are arranged correspondingly for each protective gas blowing plate 21, and the four protective gas joints 22 form an inscribed square distribution in the circular plate structure. In this embodiment, the protective gas blowing plate 21 is introduced into the protective gas by the multiple protective gas joints 22, and the protective gas joint 22 is connected with the protective gas storage tank.

[0049] In one of the embodiments of the utility model, the protective gas blowing mechanism 2 further includes: first gas valve, connected with multiple protective gas joints 22, and the output state of protective gas is controlled by the opening and closing state of first gas valve. In this embodiment, the gas outlet state of protective gas joint 22 can be controlled by first gas valve, after opening first gas valve, protective gas can be output through protective gas joint 22, and after closing first gas valve, protective gas joint 22 does not output protective gas. Through the linkage control with XY axis motion platform, the specified position can be blown off during the movement of wafer, or the blowing off is stopped, so that the problem that wafer is blown off due to blowing off wafer edge is avoided.

[0050] In one of the embodiments of the utility model, the gas blowing mechanism 3 includes: gas blowing fixed plate 31 and gas blowing joint 32. Among them, the gas blowing fixed plate 31 is arranged with laser outlet as the geometric center;Gas blowing joint 32 is connected with gas blowing fixed plate 31, and is used for introducing pressurized gas into gas blowing fixed plate 31. Specifically, the gas blowing fixed plate 31 is a circular plate structure, two gas blowing joints 32 are arranged correspondingly for each gas blowing fixed plate 31, and the two gas blowing joints 32 are distributed left and right in the circular plate structure. In this embodiment, the gas blowing fixed plate 31 is introduced into the pressurized gas by the gas blowing joint 32, and the gas blowing joint 32 is connected with the pressurized gas storage tank.

[0051] In one of the embodiments of the utility model, the gas blowing mechanism 3 further includes: second gas valve, connected with multiple gas blowing joints 32, and the output state of pressurized gas is controlled by the opening and closing state of second gas valve. In this embodiment, the gas outlet state of gas blowing joint 32 can be controlled by second gas valve, after opening second gas valve, pressurized gas can be output through gas blowing joint 32, and after closing second gas valve, gas blowing joint 32 does not output pressurized gas. Through the linkage control with XY axis motion platform, the gas pressure of specific area can be increased, so that the overall fastening of wafer is improved.

[0052] In one of the embodiments of the utility model, the geometric center of one of the protective gas blowing mechanism 2 coincides with the geometric center of the laser outlet, and the rest of the protective gas blowing mechanism 2 is arranged around the laser outlet to form a first rectangular arrangement structure; a plurality of gas blowing mechanisms 3 are arranged around the laser outlet to form a second rectangular arrangement structure. In this embodiment, the arrangement of the protective gas blowing mechanism 2 and the gas blowing mechanism 3 is arranged around the laser outlet, which optimizes the arrangement of the protective gas blowing mechanism 2 and the gas blowing mechanism 3, ensures the stability of wafer fastening, reduces the oxygen content concentration of the processing area, and ensures the wafer processing quality and efficiency.

[0053] In one of the embodiments of the utility model, the first rectangular arrangement structure and the second rectangular arrangement structure are arranged at an angle of 45 degrees. Five protective gas blowing mechanisms 2 are arranged, and one of the protective gas blowing mechanisms 2 is arranged as the geometric center of the other four protective gas blowing mechanisms 2, and the other four protective gas blowing mechanisms 2 are arranged as the right-angle end of the first rectangular arrangement structure; four gas blowing mechanisms 3 are arranged, and the four gas blowing mechanisms 3 are arranged as the right-angle end of the second rectangular arrangement structure. Specifically, as shown in the figure, Figure 1 Five protective gas blowing mechanisms 2 form a cross-shaped arrangement, four gas blowing mechanisms 3 form a square arrangement, and each gas blowing mechanism 3 is arranged between two adjacent protective gas blowing mechanisms 2.

[0054] In one of the embodiments of the utility model, the blowing pressure of the gas blowing mechanism 3 is less than the blowing pressure of the protective gas blowing mechanism 2, so as to minimize the influence of the pressurized gas on the wafer surface blowing flow. Specifically, the blowing pressure of the gas blowing mechanism 3 and the protective gas blowing mechanism 2 can be adjusted by configuring a gas pump.

[0055] The utility model also provides a wafer blowing system. The wafer blowing system comprises the wafer blowing device in the above-mentioned embodiments of the utility model.

[0056] The wafer blowing system provided by the utility model has the same advantages as above because it comprises the wafer blowing device in the above-mentioned embodiments of the utility model.

[0057] In one of the embodiments of the utility model, the wafer blowing system further comprises a position detection device for detecting the position of the wafer and opening or closing the first gas valve on the protective gas blowing mechanism 2 and / or the second gas valve on the gas blowing mechanism 3 according to the position of the wafer. Specifically, according to the detected position of the wafer, the first gas valve on the protective gas blowing mechanism 2 and / or the second gas valve on the gas blowing mechanism 3 close to the edge of the wafer are closed.

[0058] The main working process of the wafer blowing system is as follows:

[0059] During the wafer moving process, the position coordinates of the moving table are detected to control the switch of the protective gas purge plate 21 and adjust the purge pressure, so that the wafer is surface-purged in a low adsorption state and the process effect is not affected.

[0060] The device embodiments described above are merely illustrative, wherein the units described as separate components can or can not be physically separated, and the components displayed as units can or can not be physical units, i.e., can be located in one place or distributed on multiple units. Part or all of the modules can be selected to achieve the purpose of the embodiment scheme according to actual needs. Those skilled in the art can understand and implement without creative labor.

[0061] Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the present application, and not to limit them; although the present application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that: it can still modify the technical solutions recorded in the foregoing embodiments, or make equivalent replacement for part of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the embodiments of the present application.

Claims

1. A wafer purging apparatus characterized by comprising: The application relates to a wafer cleaning device. The application relates to a wafer cleaning device. The application relates to a wafer cleaning device. The application relates to a wafer cleaning device.

2. The wafer purging apparatus of claim 1, wherein The application relates to a wafer cleaning device. The application relates to a wafer cleaning device. The application relates to a wafer cleaning device. The application relates to a wafer cleaning device.

3. The wafer purging apparatus of claim 2, wherein The application relates to a wafer cleaning device.

4. The wafer purging apparatus of claim 1, wherein The application relates to a wafer cleaning device. The application relates to a wafer cleaning device. The application relates to a wafer cleaning device.

5. The wafer purging apparatus of claim 4, wherein The application relates to a wafer cleaning device.

6. The wafer purging apparatus according to any one of claims 1 to 5, characterized by, The application relates to a wafer cleaning device. The application relates to a wafer cleaning device.

7. The wafer purging apparatus of claim 6, wherein The application relates to a wafer cleaning device. The application relates to a wafer cleaning device. The application relates to a wafer cleaning device.

8. The wafer purging apparatus according to any one of claims 1 to 5, wherein The application relates to a wafer cleaning device.

9. A wafer purge system, comprising: The application relates to a wafer cleaning device. The application relates to a wafer cleaning device.

10. The wafer purge system of claim 9, wherein, The application relates to a wafer cleaning device. The application relates to a wafer cleaning device. The application relates to a wafer cleaning device. The application relates to a wafer cleaning device. The application relates to a wafer cleaning device. The application relates to a wafer cleaning device. The application relates to a wafer cleaning device. The application relates to a wafer cleaning device. The application relates to a wafer cleaning device. The application relates to a wafer cleaning device. The application relates to a wafer cleaning device. The application relates to a wafer cleaning device. The application relates to a wafer cleaning device. The application relates to a wafer cleaning device. The application relates to a wafer cleaning device. The application relates to a wafer cleaning device. The application relates to a wafer cleaning device. The application relates to a wafer cleaning device. 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