Package structure

Abstract

The utility model discloses a packaging structure, which comprises a high-side power unit and a low-side power unit, and is characterized in that the second end of the high-side power unit is connected with the first end of the low-side power unit to form a bridge arm midpoint which is connected with a bridge arm midpoint pin; the high-voltage power pin is connected with the first end of the high-side power unit; the low-voltage power pin is connected with the second end of the low-side power unit; the high-side power unit signal pin controls the high-side power unit; the low-side power unit signal pin controls the low-side power unit, the high-voltage power pin, the low-voltage power pin and the bridge arm midpoint pin are located on the first side edge of the packaging structure, and the high-side power unit signal pin and the low-side power unit signal pin are located on the second side edge. The distance between the high-side power unit signal pin and the low-side power unit signal pin is larger than the distance between any two adjacent pins on the first side edge. According to the packaging structure provided by the invention, the distance between the high-side power unit signal pin and the low-side power unit signal pin is large, and signal interference is reduced.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor packaging technology, and more specifically, to a packaging structure. Background Technology

[0002] As the application fields of products become more extensive, the performance requirements for power devices are constantly increasing, including applications in consumer electronics, frequency conversion and energy storage, industrial applications, and even automotive products.

[0003] Current power semiconductor devices with a half-bridge structure require an insulating substrate to support the chip. For example, DBC (Direct Bonded Copper) technology is used to bond copper foil to a ceramic substrate, with an additional heat-dissipating substrate on the outside for heat dissipation. However, this packaging structure is relatively expensive. Utility Model Content

[0004] In view of the above problems, the purpose of this utility model is to provide a packaging structure that solves the above technical problems.

[0005] According to this application, a packaging structure is provided, including:

[0006] A high-side power unit and a low-side power unit, wherein the high-side power unit includes a first end and a second end of the high-side power unit, and the low-side power unit includes a first end and a second end of the low-side power unit, wherein the second end of the high-side power unit is connected to the first end of the low-side power unit to form the midpoint of the bridge arm;

[0007] The high-voltage power pin is connected to the first terminal of the high-side power unit.

[0008] The bridge arm midpoint pin is connected to the midpoint of the bridge arm.

[0009] The low-voltage power pin is connected to the second terminal of the low-side power unit.

[0010] High-side power unit signal pin, which controls the high-side power unit;

[0011] Low-side power unit signal pin, which controls the low-side power unit;

[0012] The package structure includes a first side and a second side opposite to the first side. The high-voltage power pin, the low-voltage power pin, and the bridge arm midpoint pin are located on the first side, and the high-side power unit signal pin and the low-side power unit signal pin are located sequentially on the second side.

[0013] The distance between any two adjacent pins among the high-voltage power pin, the low-voltage power pin, and the bridge arm midpoint pin is the first distance, and the distance between the high-side power unit signal pin and the low-side power unit signal pin is the second distance, which is greater than the first distance.

[0014] Optionally, the high-voltage power pin, the low-voltage power pin, and the bridge arm midpoint pin are arranged sequentially from top to bottom along the first side, and the distance between the low-voltage power pin and the bridge arm midpoint pin is the first distance, and the distance between the high-voltage power pin and the low-voltage power pin is the first distance.

[0015] Optionally, the high-voltage power pin, the bridge arm midpoint pin, and the low-voltage power pin are arranged sequentially from top to bottom along the first side, and the distance between the high-voltage power pin and the bridge arm midpoint pin is the first distance, and the distance between the bridge arm midpoint pin and the low-voltage power pin is the first distance.

[0016] Optionally, the high-side power unit signal pin includes a first gate pin and a first Kelvin pin. The first gate pin is connected to the control terminal of the high-side power unit, and the first Kelvin pin is connected to the second terminal of the high-side power unit.

[0017] The low-side power unit signal pins include a second gate pin and a second Kelvin pin. The second gate pin is connected to the control terminal of the low-side power unit, and the second Kelvin pin is connected to the second terminal of the low-side power unit.

[0018] The distance between the first Kelvin pin and the second Kelvin pin is greater than the first distance.

[0019] Optionally, the distance between the first gate pin and the second gate pin is greater than the distance between the first Kelvin pin and the second Kelvin pin.

[0020] The distance between the first gate pin and the second gate pin is greater than the first distance.

[0021] The distance between the first Kelvin pin and the second Kelvin pin is equal to the second distance.

[0022] Optionally, the packaging structure further includes:

[0023] The first temperature sensor includes a first end of the first temperature sensor and a second end of the first temperature sensor;

[0024] The first temperature detection pin is connected to the first end of the first temperature sensor. The first temperature detection pin is located on the second side and between the first Kelvin pin and the second Kelvin pin.

[0025] Optionally, the second end of the first temperature sensor is electrically connected to the low-voltage power pin and the second Kelvin pin.

[0026] Optionally, the packaging structure further includes:

[0027] The second temperature sensor includes a first end of the second temperature sensor and a second end of the second temperature sensor.

[0028] The first temperature detection pin is connected to the first end of the second temperature sensor. The first temperature detection pin is located on the second side and between the first Kelvin pin and the second Kelvin pin.

[0029] The second temperature detection pin is connected to the second end of the second temperature sensor.

[0030] Optionally, the second terminal of the second temperature sensor is electrically connected to the low-voltage power pin and the second Kelvin pin.

[0031] The second temperature detection pin is located between the low-voltage power pin and a power pin adjacent to the low-voltage power pin. The power pin adjacent to the low-voltage power pin is either the bridge arm midpoint pin or the high-voltage power pin, or the power pin adjacent to the low-voltage power pin is the bridge arm midpoint pin.

[0032] Optionally, the packaging structure further includes:

[0033] The third temperature sensor includes a first end of the third temperature sensor and a second end of the third temperature sensor;

[0034] The third temperature detection pin is connected to the first end of the third temperature sensor. The third temperature detection pin is located on the first side and between the low-voltage power pin and a power pin adjacent to the low-voltage power pin. The power pin adjacent to the low-voltage power pin is the bridge arm midpoint pin and the high-voltage power pin, or the power pin adjacent to the low-voltage power pin is the bridge arm midpoint pin.

[0035] Optionally, the second end of the third temperature sensor is electrically connected to the low-voltage power pin and the second Kelvin pin.

[0036] Optionally, it also includes:

[0037] First Ki Island, Second Ki Island, Third Ki Island

[0038] The high-side power unit is located on the first base island, and the high-voltage power pin is led out from the first base island.

[0039] The low-side power unit is located on the second base island, and the midpoint pin of the bridge arm is led out from the second base island.

[0040] The low-voltage power pin is led out from the third base island;

[0041] The second end of the low-side power unit is connected to the low-voltage power pin via a wire bonding connection.

[0042] The second end of the high-side power unit is connected to the first end of the low-side power unit via a wire bonding process.

[0043] The first base island, the second base island, and the third base island are each independent and insulated from each other.

[0044] Optionally, it also includes:

[0045] Fourth base island, fifth base island, sixth base island, seventh base island,

[0046] The first gate pin is located on the fourth base island, and the first gate pin is connected to the control terminal of the high-side power unit via wire bonding.

[0047] The first Kelvin pin is located on the fifth base island, and the first Kelvin pin is connected to the second end of the high-side power unit via a wire bonding connection.

[0048] The second Kelvin pin is located on the sixth base island, and the second Kelvin pin is connected to the second terminal of the low-side power unit via a wire bonding connection.

[0049] The second gate pin is located on the seventh base island, and the second gate pin is connected to the control terminal of the low-side power unit via a wire bonding connection.

[0050] The high-voltage power pin, the low-voltage power pin, and the bridge arm midpoint pin are arranged sequentially from top to bottom along the first side, and the first gate pin, the first Kelvin pin, the second Kelvin pin, and the second gate pin are arranged sequentially from top to bottom along the second side.

[0051] The first base island to the seventh base island are each independent and insulated from each other.

[0052] Optionally, it also includes:

[0053] The lead frame comprises the first base island to the seventh base island, the high-voltage power pin, the low-voltage power pin, the bridge arm midpoint pin, the low-side power unit signal pin, and the high-side power unit signal pin; and

[0054] A molding compound covers the base island in the lead frame, and the high-voltage power pin, the low-voltage power pin, the bridge arm midpoint pin, the low-side power unit signal pin, and the high-side power unit signal pin are formed and extend to the outside along the side of the molding compound.

[0055] Optionally, it also includes:

[0056] The eighth base island is located within the lead frame;

[0057] A first temperature sensor is located on the second base island and is insulated from the second base island by a first insulating layer. The first temperature sensor includes a first end and a second end. The second end of the first temperature sensor is connected to the low-voltage power pin or the second Kelvin pin by a wire connection.

[0058] The first temperature detection pin is located on the eighth base island. The first temperature detection pin is connected to the first end of the first temperature sensor by a wire. The eighth base island is located between the fifth base island and the sixth base island.

[0059] Optionally, it also includes;

[0060] The eighth base island is located within the lead frame;

[0061] A second temperature sensor is located on the third base island. The second temperature sensor includes a first end of a second temperature sensor and a second end of a second temperature sensor. The second end of the second temperature sensor is electrically connected to the third base island.

[0062] The first temperature detection pin is located on the eighth base island. The first temperature detection pin is connected to the first end of the second temperature sensor via a wire bonding. The eighth base island is located between the fifth base island and the sixth base island.

[0063] The second temperature detection pin is led out from the third base island. The second temperature detection pin is located between the low-voltage power pin and a power pin adjacent to the low-voltage power pin. The power pin adjacent to the low-voltage power pin is the bridge arm midpoint pin and the high-voltage power pin, or the power pin adjacent to the low-voltage power pin is the bridge arm midpoint pin.

[0064] Optionally, it also includes:

[0065] The ninth base island is located within the lead frame;

[0066] A third temperature sensor is located on the third base island. The third temperature sensor includes a first end and a second end, and the second end of the third temperature sensor is electrically connected to the third base island.

[0067] The third temperature detection pin is located on the ninth base island. The third temperature detection pin is connected to the first end of the third temperature sensor by a wire. The third temperature detection pin is located between the low-voltage power pin and a power pin adjacent to the low-voltage power pin. The power pin adjacent to the low-voltage power pin is the bridge arm midpoint pin and the high-voltage power pin, or the power pin adjacent to the low-voltage power pin is the bridge arm midpoint pin.

[0068] Optionally, the first surface of the high-side power unit is opposite to the second surface, the second surface of the high-side power unit faces the first surface of the first base island, the first end of the high-side power unit extending from the second surface of the high-side power unit is connected to the first surface of the first base island, and the second end and the control end of the high-side power unit are extended from the first surface of the high-side power unit.

[0069] The first surface of the low-side power unit is opposite to the second surface, the second surface of the low-side power unit faces the first surface of the second base island, the first end of the low-side power unit extending from the second surface of the low-side power unit is connected to the first surface of the second base island, and the second end and control end of the low-side power unit are extending from the first surface of the low-side power unit.

[0070] Optionally, the high-side power unit includes a first insulated-gate bipolar transistor (IGBT) and a first fast recovery diode (FCD). The base of the first IGBT serves as the control terminal of the high-side power unit. The collector of the first IGBT is connected to the cathode of the first FCD and serves as the first terminal of the high-side power unit. The emitter of the first IGBT is connected to the anode of the first FCD and serves as the second terminal of the high-side power unit.

[0071] Optionally, the low-side power unit includes a second insulated-gate bipolar transistor (IGBT) and a second fast recovery diode (FCD). The base of the second IGBT serves as the control terminal of the low-side power unit. The collector of the second IGBT is connected to the cathode of the second FCD and serves as the first terminal of the low-side power unit. The emitter of the second IGBT is connected to the anode of the second FCD and serves as the second terminal of the low-side power unit.

[0072] Optionally, the high-side power unit includes a first metal-oxide-semiconductor field-effect transistor, wherein the gate of the first metal-oxide-semiconductor field-effect transistor serves as the control terminal of the high-side power unit, the drain of the first metal-oxide-semiconductor field-effect transistor serves as the first terminal of the high-side power unit, and the source of the first metal-oxide-semiconductor field-effect transistor serves as the second terminal of the high-side power unit.

[0073] Optionally, the low-side power unit includes a second metal-oxide-semiconductor field-effect transistor, wherein the gate of the second metal-oxide-semiconductor field-effect transistor serves as the control terminal of the low-side power unit, the drain of the second metal-oxide-semiconductor field-effect transistor serves as the first terminal of the low-side power unit, and the source of the second metal-oxide-semiconductor field-effect transistor serves as the second terminal of the low-side power unit.

[0074] Optionally, it also includes:

[0075] Multiple base islands, each of which corresponds to leading out one of the high-voltage power pin, the low-voltage power pin, the bridge arm midpoint pin, the low-side power unit signal pin, and the high-side power unit signal pin;

[0076] The lead frame comprises the plurality of base islands, the high-voltage power pins, the low-voltage power pins, the bridge arm midpoint pins, the low-side power unit signal pins, and the high-side power unit signal pins; and

[0077] A molding compound covers the plurality of base islands in the lead frame, wherein the high-voltage power pin, the low-voltage power pin, the bridge arm midpoint pin, the low-side power unit signal pin, and the high-side power unit signal pin are formed and extend outward along the side of the molding compound.

[0078] The package structure provided in this application has the high-voltage power pin, low-voltage power pin, and bridge arm midpoint pin located on the first side of the package structure, while the high-side power unit signal pin and low-side power unit signal pin are located sequentially on the second side of the package structure. Furthermore, the distance between the high-side power unit signal pin and the low-side power unit signal pin is greater than the distance between any two adjacent pins on the first side. This larger distance between the high-side and low-side power unit signal pins reduces signal interference.

[0079] Furthermore, the high-side power unit signal pins include a first gate pin and a first Kelvin pin, while the low-side power unit signal pins include a second gate pin and a second Kelvin pin. The distance between the first gate pin and the second gate pin is greater than the distance between the first Kelvin pin and the second Kelvin pin, and the distance between the first Kelvin pin and the second Kelvin pin is greater than the distance between any two adjacent pins on the first side. This reduces signal interference between the high-side power unit signal pins and the low-side power unit signal pins.

[0080] Furthermore, a temperature detection pin can be provided between the first Kelvin pin and the second Kelvin pin to realize the temperature detection function of the package structure. Attached Figure Description

[0081] The above and other objects, features and advantages of the present invention will become clearer from the following description of embodiments of the present invention with reference to the accompanying drawings, in which:

[0082] Figure 1 This diagram shows a circuit schematic of a packaging structure according to the present invention.

[0083] Figure 2 This diagram shows the pin distribution of the package structure according to the first embodiment of the present invention;

[0084] Figure 3 This diagram shows a packaging structure according to the first embodiment of the present invention.

[0085] Figure 4 A cross-sectional view of the packaging structure provided according to the first embodiment of the present invention is shown;

[0086] Figure 5 This diagram shows the pin distribution of the package structure according to the second embodiment of the present invention;

[0087] Figure 6 This diagram shows a packaging structure according to a second embodiment of the present invention.

[0088] Figure 7 This diagram shows the pin distribution of the package structure according to the third embodiment of the present invention;

[0089] Figure 8 This diagram shows a packaging structure according to a third embodiment of the present invention.

[0090] Figure 9 A circuit diagram of another packaging structure according to the present invention is shown;

[0091] Figure 10This diagram shows the pin distribution of the package structure according to the fourth embodiment of the present invention;

[0092] Figure 11 A schematic diagram of the packaging structure according to the fourth embodiment of the present invention is shown;

[0093] Figure 12 This diagram shows the pin distribution of the package structure according to the fifth embodiment of the present invention;

[0094] Figure 13 This diagram shows a packaging structure according to the fifth embodiment of the present invention.

[0095] Figure 14 This diagram shows the pin distribution of the package structure according to the sixth embodiment of the present invention;

[0096] Figure 15 A schematic diagram of the packaging structure according to the sixth embodiment of the present invention is shown;

[0097] Figure 16 A circuit diagram of yet another packaging structure provided by the present invention is shown;

[0098] Figure 17 A schematic diagram of the packaging structure provided according to the seventh embodiment of the present invention is shown. Detailed Implementation

[0099] The present invention will now be described in more detail with reference to the accompanying drawings. For clarity, the various parts in the drawings are not drawn to scale. Furthermore, certain well-known parts may not be shown. Many specific details of the present invention are described below, but as those skilled in the art will understand, the present invention may be implemented without following these specific details.

[0100] This utility model can be presented in various forms, some of which will be described below.

[0101] Figure 1 A circuit diagram of a packaging structure provided by the present invention is shown. Figure 2 A schematic diagram of the pin distribution of the package structure provided according to the first embodiment of the present invention is shown. Figure 3 A schematic diagram of the packaging structure provided according to the first embodiment of the present invention is shown. Figure 4 A cross-sectional view of the packaging structure provided according to the first embodiment of the present invention is shown. Along... Figure 3 Sectional view obtained from the AA line section Figure 4 High-side power unit 160 is visible in the middle, along Figure 3 Sectional view obtained from the BB line section Figure 4The low-side power unit 170 is visible in the middle.

[0102] like Figures 1 to 4 As shown, the packaging structure 100a includes:

[0103] The high-side power unit 160 and the low-side power unit 170 are provided. The high-side power unit 160 includes a first end and a second end. The low-side power unit 170 includes a first end and a second end. The second end of the high-side power unit 160 is connected to the first end of the low-side power unit 170 to form the midpoint of the bridge arm.

[0104] The high-voltage power pin HV is connected to the first terminal of the high-side power unit 160.

[0105] The bridge arm midpoint pin SW is connected to the bridge arm midpoint.

[0106] The low-voltage power pin LV is connected to the second terminal of the low-side power unit 170.

[0107] High-side power unit signal pin 152 controls high-side power unit 160.

[0108] Low-side power unit signal pin 153 controls low-side power unit 170.

[0109] The package structure 100a includes a first side 141 and a second side 142 opposite to the first side 141. The high voltage power pin HV, the low voltage power pin LV, and the bridge arm midpoint pin SW are located on the first side 141, and the high-side power unit signal pin 152 and the low-side power unit signal pin 153 are located on the second side 142 in sequence.

[0110] Furthermore, the distance between any two adjacent pins on the first side is the first distance, and the distance between the high-side power unit signal pin 152 and the low-side power unit signal pin 153 is the second distance, which is greater than the first distance.

[0111] For example, the distance d1 between the high-voltage power pin HV and the low-voltage power pin LV is a first distance. The distance d1 between the low-voltage power pin LV and the bridge arm midpoint pin SW is also a first distance.

[0112] For example, the high-side power unit signal pin 152 includes a first gate pin G1 and a first Kelvin pin K1. The first gate pin G1 is connected to the control terminal of the high-side power unit 160, and the first Kelvin pin K1 is connected to the second terminal of the high-side power unit 160.

[0113] The low-side power unit signal pin 153 includes a second gate pin G2 and a second Kelvin pin K2. The second gate pin G2 is connected to the control terminal of the low-side power unit 170, and the second Kelvin pin K2 is connected to the second terminal of the low-side power unit 170.

[0114] The distance d2 between the first Kelvin pin K1 and the second Kelvin pin K2 is greater than the first distance.

[0115] The distance d3 between the first gate pin G1 and the second gate pin G2 is greater than the distance d2 between the first Kelvin pin K1 and the second Kelvin pin K2.

[0116] The distance d3 between the first gate pin G1 and the second gate pin G2 is greater than the first distance.

[0117] The distance d2 between the first Kelvin pin K1 and the second Kelvin pin K2 is equal to the second distance.

[0118] The package structure 100a also includes a temperature sensor R. The temperature sensor R is, for example, a first temperature sensor R1, including a first end of the first temperature sensor R1 and a second end of the first temperature sensor R2.

[0119] The first temperature detection pin TEMP1 is connected to the first terminal of the first temperature sensor R1. The first temperature detection pin TEMP1 is located on the second side 142 and is located between the first Kelvin pin K1 and the second Kelvin pin K2. The second terminal of the first temperature sensor R1 is electrically connected to the low-voltage power pin LV and the second Kelvin pin K2.

[0120] The package structure 100a also includes a lead frame 110, which includes multiple base islands, such as a first base island 111, a second base island 112, a third base island 113, a fourth base island 114, a fifth base island 115, a sixth base island 116, and a seventh base island 117. The first base island 111 to the seventh base island 117 are independent and insulated from each other.

[0121] The high-side power unit 160 is located on the first base island 111, and a high-voltage power pin HV is led out from the first base island 111.

[0122] The low-side power unit 170 is located on the second base island 112, and the bridge arm midpoint pin SW is led out from the second base island 112.

[0123] The low-voltage power pin LV is brought out on the third base island 113.

[0124] The second end of the low-side power unit 170 is connected to the low-voltage power pin LV via a wire bonding.

[0125] The second end of the high-side power unit 160 is connected to the first end of the low-side power unit 170 via a wire bonding.

[0126] The first gate pin G1 is located on the fourth base island 114, and the first gate pin G1 is connected to the control terminal of the high-side power unit 160 via a wire bonding.

[0127] The first Kelvin pin K1 is located on the fifth base island 115, and the first Kelvin pin K1 is connected to the second end of the high-side power unit 160 via a wire bonding.

[0128] The second Kelvin pin K2 is located on the sixth base island 116, and the second Kelvin pin K2 is connected to the second end of the low-side power unit 170 via a wire bonding.

[0129] The second gate pin G2 is located on the seventh base island 117, and the second gate pin G2 is connected to the control terminal of the low-side power unit 170 via a wire bonding.

[0130] The high-voltage power pin HV, the low-voltage power pin LV, and the bridge arm midpoint pin SW are arranged sequentially from top to bottom along the first side 141. The first gate pin G1, the first Kelvin pin K1, the second Kelvin pin K2, and the second gate pin G2 are arranged sequentially from top to bottom along the second side 142.

[0131] For example, the first surface of the high-side power unit 160 is opposite to the second surface, the second surface of the high-side power unit 160 faces the first surface of the first base island 111, the first end of the high-side power unit 160 leading out from the second surface of the high-side power unit 160 is connected to the first surface of the first base island 111, and the second end and control end of the high-side power unit 160 are led out from the first surface of the high-side power unit 160.

[0132] For example, the first surface of the low-side power unit 170 is opposite to the second surface, the second surface of the low-side power unit 170 faces the first surface of the second base island 112, the first end of the low-side power unit 170 extending from the second surface of the low-side power unit 170 is connected to the first surface of the second base island 112, and the second end and control end of the low-side power unit 170 are extending from the first surface of the low-side power unit 170.

[0133] For example, the high-side power unit 160 includes a first insulated-gate bipolar transistor (IGBT) 1 and a first fast recovery diode (FRD) 1. The base of the first IGBT 1 serves as the control terminal of the high-side power unit 160. The collector of the first IGBT 1 is connected to the cathode of the first fast recovery diode (FRD) 1 and serves as the first terminal of the high-side power unit 160. The emitter of the first IGBT 1 is connected to the anode of the first fast recovery diode (FRD) 1 and serves as the second terminal of the high-side power unit 160.

[0134] For example, the low-side power unit 170 includes a second insulated-gate bipolar transistor (IGBT2) and a second fast recovery diode (FRD2). The base of the second IGBT2 serves as the control terminal of the low-side power unit 170. The collector of the second IGBT2 is connected to the cathode of the second fast recovery diode (FRD2) and serves as the first terminal of the low-side power unit 170. The emitter of the second IGBT2 is connected to the anode of the second fast recovery diode (FRD2) and serves as the second terminal of the low-side power unit 170.

[0135] The lead frame 100 of the package structure 100a also includes an eighth base island 118.

[0136] The first temperature sensor R1 is located on the second base island 112, and the first temperature sensor R1 is insulated from the second base island 112 through the first insulating layer. The second end of the first temperature sensor R1 is connected to the low-voltage power pin LV by a wire bonding.

[0137] The first temperature detection pin TEMP1 is located on the eighth base island 118. The first temperature detection pin TEMP1 is connected to the first end of the first temperature sensor R1 by a wire. The eighth base island 118 is located between the fifth base island 115 and the sixth base island 116.

[0138] Package structure 100a also includes a molding compound 140 that covers the base island in lead frame 110, as well as high-side power unit 160 and low-side power unit 170. Multiple pins 150 extend outward along the sides of the molding compound 140. The multiple pins 150 include, for example, a high-voltage power pin HV, a low-voltage power pin LV, a bridge arm midpoint pin SW, a high-side power unit signal pin 152, a low-side power unit signal pin 153, and a first temperature sensing pin TEMP1.

[0139] Furthermore, the temperature sensor R is a negative temperature coefficient thermistor or a positive temperature coefficient thermistor.

[0140] Figure 5 A schematic diagram of the pin distribution of the package structure provided according to the second embodiment of the present invention is shown. Figure 6 A schematic diagram of the packaging structure provided according to the second embodiment of the present invention is shown.

[0141] It should be noted that the internal circuitry of the packaging structure 100d provided in the second embodiment is the same as that of the packaging structure 100a.

[0142] The difference between the packaging structure 100d provided in the second embodiment and the packaging structure 100a provided in the first embodiment lies in the different positions of the temperature sensor R and the different distribution of the temperature detection pins.

[0143] The temperature sensor R in the package structure 100d is, for example, a third temperature sensor R3, including a first end and a second end of the third temperature sensor R3.

[0144] The temperature sensing pin in package structure 100d includes a third temperature sensing pin TEMP3, which is connected to the first end of the third temperature sensor R3. The third temperature sensing pin TEMP3 is located on the first side 141 and between the low-voltage power pin LV and a power pin adjacent to the low-voltage power pin LV. The second end of the third temperature sensor R3 is electrically connected to the low-voltage power pin LV and the second Kelvin pin K2.

[0145] In this embodiment, the power pins adjacent to the low-voltage power pin LV are the bridge arm midpoint pin SW and the high-voltage power pin HV. The third temperature detection pin TEMP3 is located between the high-voltage power pin HV and the low-voltage power pin LV.

[0146] The lead frame 100 of the package structure 100b includes a ninth base island 119 in addition to the first base island 111 to the seventh base island 117.

[0147] The third temperature sensor R3 is located on the third base island 113, and the second end of the third temperature sensor R3 is electrically connected to the third base island 113.

[0148] The third temperature detection pin TEMP3 is located on the ninth base island 119. The third temperature detection pin TEMP3 is connected to the first end of the third temperature sensor R3 by a wire. The ninth base island 119 is located between the first base island 111 and the third base island 113.

[0149] Figure 7 A schematic diagram of the pin distribution of the package structure provided according to the third embodiment of the present invention is shown. Figure 8 A schematic diagram of the packaging structure provided according to the third embodiment of the present invention is shown.

[0150] It should be noted that the internal circuitry of the packaging structure 100e provided in the third embodiment is the same as that of the packaging structure 100d.

[0151] The difference between the package structure 100e provided in the third embodiment and the package structure 100d provided in the second embodiment lies in the position of the third temperature detection pin TEMP3.

[0152] In this embodiment, the power pins adjacent to the low-voltage power pin LV are the bridge arm midpoint pin SW and the high-voltage power pin HV. The third temperature sensing pin TEMP3 is located between the bridge arm midpoint pin SW and the low-voltage power pin LV.

[0153] Figure 9A circuit diagram of another packaging structure provided by the present invention is shown. Figure 10 A schematic diagram of the pin distribution of the package structure provided according to the fourth embodiment of the present invention is shown. Figure 11 A schematic diagram of the packaging structure provided according to the fourth embodiment of the present invention is shown.

[0154] The difference between the packaging structure 100b provided in the fourth embodiment and the packaging structure 100a provided in the first embodiment is that the position of the temperature sensor R is different, and the number and distribution of the temperature detection pins are different.

[0155] See Figure 9 , Figure 10 The temperature sensor R in package structure 100b is, for example, a second temperature sensor R2, including a first terminal and a second terminal of the second temperature sensor R2. The temperature detection pins in package structure 100b include a first temperature detection pin TEMP1 and a second temperature detection pin TEMP2.

[0156] The first temperature detection pin TEMP1 is connected to the first end of the second temperature sensor R2. The first temperature detection pin TEMP1 is located on the second side 142 and between the first Kelvin pin K1 and the second Kelvin pin K2.

[0157] The second temperature sensing pin TEMP2 is connected to the second terminal of the second temperature sensor R2. The second terminal of the second temperature sensor R2 is electrically connected to the low-voltage power pin LV and the second Kelvin pin K2. The second temperature sensing pin TEMP2 is located between the low-voltage power pin LV and a power pin adjacent to the low-voltage power pin LV.

[0158] In this embodiment, the power pins adjacent to the low-voltage power pin LV are the bridge arm midpoint pin SW and the high-voltage power pin HV. The second temperature detection pin TEMP2 is located between the low-voltage power pin LV and the bridge arm midpoint pin SW.

[0159] The lead frame 100 of the package structure 100b includes an eighth base island 118 in addition to the first base island 111 to the seventh base island 117.

[0160] The second temperature sensor R2 is located on the third base island 113, and the second end of the second temperature sensor R2 is electrically connected to the third base island 113.

[0161] The first temperature detection pin TEMP1 is located on the eighth base island 118. The first temperature detection pin TEMP1 is connected to the first end of the second temperature sensor R2 by a wire. The eighth base island 118 is located between the fifth base island 115 and the sixth base island 116.

[0162] The third base island 113 leads out the second temperature detection pin TEMP2, which is located between the low-voltage power pin LV and the bridge arm midpoint pin SW.

[0163] Figure 12 A schematic diagram of the pin distribution of the package structure provided according to the fifth embodiment of the present invention is shown. Figure 13 A schematic diagram of the packaging structure provided according to the fifth embodiment of the present invention is shown.

[0164] It should be noted that the internal circuitry of the packaging structure 100f provided in the fifth embodiment is the same as that of the packaging structure 100b.

[0165] The difference between the package structure 100f provided in the fifth embodiment and the package structure 100b provided in the fourth embodiment lies in the different positions of the second temperature detection pin TEMP2.

[0166] In this embodiment, the power pins adjacent to the low-voltage power pin LV are the bridge arm midpoint pin SW and the high-voltage power pin HV. The second temperature detection pin TEMP2 is located between the high-voltage power pin HV and the low-voltage power pin LV.

[0167] Figure 14 A schematic diagram of the pin distribution of the package structure provided according to the sixth embodiment of the present invention is shown. Figure 15 A schematic diagram of the packaging structure provided according to the sixth embodiment of the present invention is shown.

[0168] It should be noted that the internal circuitry of the packaging structure 100g provided in the sixth embodiment is the same as that of the packaging structure 100a.

[0169] The difference between the packaging structure 100g provided in the sixth embodiment and the packaging structure 100a provided in the first embodiment lies in the different pin arrangement on the first side.

[0170] The high-voltage power pin HV, the bridge arm midpoint pin SW, and the low-voltage power pin LV are arranged sequentially from top to bottom along the first side 141. The distance between the high-voltage power pin HV and the bridge arm midpoint pin SW is the first distance d1, and the distance between the bridge arm midpoint pin SW and the low-voltage power pin LV is the first distance d1.

[0171] The second end of the first temperature sensor R1 is connected to the second Kelvin pin K2 via a wire bonding.

[0172] It should be noted that the implementation of this application is not limited to the above embodiments. For example, the pin arrangement on the first side of package structures 100b, 100d, 100e, 100f, and 100c can all be replaced with the arrangement in package structure 100g.

[0173] Correspondingly, the power pin adjacent to the low-voltage power pin LV is the bridge arm midpoint pin SW. The second temperature sensing pin TEMP2 is located between the bridge arm midpoint pin SW and the low-voltage power pin LV. The third temperature sensing pin TEMP3 is located between the bridge arm midpoint pin SW and the low-voltage power pin LV.

[0174] Figure 16 A circuit diagram of another packaging structure provided by the present invention is shown. Figure 17 A schematic diagram of the packaging structure provided according to the seventh embodiment of the present invention is shown.

[0175] The difference between the packaging structure 100c provided in the seventh embodiment and the packaging structure 100a provided in the first embodiment lies in the different device types in the low-side power unit 170 and the high-side power unit 160.

[0176] See Figure 16 , Figure 17 The high-side power unit 160 includes a first metal-oxide-semiconductor field-effect transistor MOSFET1. The low-side power unit 170 includes a second metal-oxide-semiconductor field-effect transistor MOSFET2.

[0177] The gate of the first metal-oxide-semiconductor field-effect transistor MOSFET1 serves as the control terminal of the high-side power unit 160, the drain of the first metal-oxide-semiconductor field-effect transistor MOSFET1 serves as the first terminal of the high-side power unit 160, and the source of the first metal-oxide-semiconductor field-effect transistor MOSFET1 serves as the second terminal of the high-side power unit 160.

[0178] The gate of the second metal-oxide-semiconductor field-effect transistor MOSFET2 serves as the control terminal of the low-side power unit 170, the drain of the second metal-oxide-semiconductor field-effect transistor MOSFET2 serves as the first terminal of the low-side power unit 170, and the source of the second metal-oxide-semiconductor field-effect transistor MOSFET2 serves as the second terminal of the low-side power unit 170.

[0179] It should be noted that the implementation of this application is not limited to the above embodiments. For example, the high-side power unit 160 in package structures 100b, 100d, 100e, 100f, 100g, and other conceivable package structures can be replaced with a first metal-oxide-semiconductor field-effect transistor MOSFET1, and the low-side power unit 170 can be replaced with a second metal-oxide-semiconductor field-effect transistor MOSFET2.

[0180] For example, in the package structure of this application, the power pins and signal pins are bent in the same direction so that the package structure can be surface-mounted.

[0181] The package structure provided in this application has the high-voltage power pin, low-voltage power pin, and bridge arm midpoint pin located on the first side of the package structure, while the high-side power unit signal pin and low-side power unit signal pin are located sequentially on the second side of the package structure. Furthermore, the distance between the high-side power unit signal pin and the low-side power unit signal pin is greater than the distance between any two adjacent pins on the first side. This larger distance between the high-side and low-side power unit signal pins reduces signal interference.

[0182] Furthermore, the high-side power unit signal pins include a first gate pin and a first Kelvin pin, while the low-side power unit signal pins include a second gate pin and a second Kelvin pin. The distance between the first gate pin and the second gate pin is greater than the distance between the first Kelvin pin and the second Kelvin pin, and the distance between the first Kelvin pin and the second Kelvin pin is greater than the distance between any two adjacent pins on the first side. This reduces signal interference between the high-side power unit signal pins and the low-side power unit signal pins.

[0183] Furthermore, a temperature detection pin can be provided between the first Kelvin pin and the second Kelvin pin to realize the temperature detection function of the package structure.

[0184] It should be noted that, in this document, relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

[0185] As described above, these embodiments of the present invention do not exhaustively cover all details, nor do they limit the invention to the specific embodiments described. Clearly, many modifications and variations can be made based on the above description. This specification selects and specifically describes these embodiments to better explain the principles and practical applications of the present invention, thereby enabling those skilled in the art to effectively utilize the present invention and its modifications. The present invention is limited only by the claims and their full scope and equivalents.

Claims

1. A package structure, characterized by, The package structure comprises a first side and a second side opposite to the first side, the high-voltage power pin, the low-voltage power pin and the bridge arm midpoint pin are located on the first side, and the high-side power unit signal pin and the low-side power unit signal pin are sequentially located on the second side. The distance between any two adjacent pins of the high-voltage power pin, the low-voltage power pin and the bridge arm midpoint pin is a first distance, and the distance between the high-side power unit signal pin and the low-side power unit signal pin is a second distance, the second distance being greater than the first distance. The high-voltage power pin, the low-voltage power pin and the bridge arm midpoint pin are sequentially arranged from top to bottom along the first side, the distance between the low-voltage power pin and the bridge arm midpoint pin is the first distance, and the distance between the high-voltage power pin and the low-voltage power pin is the first distance. The high-voltage power pin, the bridge arm midpoint pin and the low-voltage power pin are sequentially arranged from top to bottom along the first side, the distance between the high-voltage power pin and the bridge arm midpoint pin is the first distance, and the distance between the bridge arm midpoint pin and the low-voltage power pin is the first distance.

4. The package structure of claim 2 or 3, wherein the high-side power unit signal pin comprises a first gate pin and a first Kelvin pin, the first gate pin being connected to a control end of the high-side power unit, and the first Kelvin pin being connected to the second end of the high-side power unit. The low-side power unit signal pin comprises a second gate pin and a second Kelvin pin, the second gate pin being connected to a control end of the low-side power unit, and the second Kelvin pin being connected to the second end of the low-side power unit. The distance between the first Kelvin pin and the second Kelvin pin is greater than the first distance.

5. The package structure of claim 4, wherein the distance between the first gate pin and the second gate pin is greater than the distance between the first Kelvin pin and the second Kelvin pin. The distance between the first gate pin and the second gate pin is greater than the first distance.

2. The package structure of claim 1, wherein, The distance between the first Kelvin pin and the second Kelvin pin is equal to the second distance.

3. The package structure of claim 1, wherein, The package structure further comprises: ​ ​ ​ ​ ​ ​ ​ ​ 6. The package structure of claim 4, wherein, ​ The first temperature sensor comprises a first end of the first temperature sensor and a second end of the first temperature sensor; The first temperature detection pin is connected to the first end of the first temperature sensor, and the first temperature detection pin is located on the second side edge and between the first Kelvin pin and the second Kelvin pin.

7. The package structure of claim 6, wherein, The second end of the first temperature sensor is electrically connected to the low-voltage power pin and the second Kelvin pin.

8. The package structure of claim 4, wherein, The packaging structure further comprises: The second temperature sensor comprises a first end of the second temperature sensor and a second end of the second temperature sensor; The first temperature detection pin is connected to the first end of the second temperature sensor, and the first temperature detection pin is located on the second side edge and between the first Kelvin pin and the second Kelvin pin. The second temperature detection pin is connected to the second end of the second temperature sensor.

9. The package structure of claim 8, wherein, The second end of the second temperature sensor is electrically connected to the low-voltage power pin and the second Kelvin pin, The second temperature detection pin is located between the low-voltage power pin and a power pin adjacent to the low-voltage power pin, and the power pin adjacent to the low-voltage power pin is the bridge arm midpoint pin and the high-voltage power pin, or the power pin adjacent to the low-voltage power pin is the bridge arm midpoint pin.

10. The package structure of claim 4, wherein, The packaging structure further comprises: The third temperature sensor comprises a first end of the third temperature sensor and a second end of the third temperature sensor; The third temperature detection pin is connected to the first end of the third temperature sensor, and the third temperature detection pin is located on the first side edge and between the low-voltage power pin and a power pin adjacent to the low-voltage power pin, and the power pin adjacent to the low-voltage power pin is the bridge arm midpoint pin and the high-voltage power pin, or the power pin adjacent to the low-voltage power pin is the bridge arm midpoint pin.

11. The package structure of claim 10, wherein, The second end of the third temperature sensor is electrically connected to the low-voltage power pin and the second Kelvin pin.

12. The package structure of claim 4, wherein, Further comprising: The first base island, the second base island, the third base island, The high-side power unit is located on the first base island, and the high-voltage power pin is led out on the first base island, The low-side power unit is located on the second base island, and the bridge arm midpoint pin is led out on the second base island, The low-voltage power pin is led out on the third base island; The second end of the low-side power unit is connected to the low-voltage power pin by wire bonding, The second end of the high-side power unit is connected to the first end of the low-side power unit by wire bonding, The first base island, the second base island, and the third base island are independent and insulated from each other.

13. The package structure of claim 12, wherein, Further comprising: The fourth base island, the fifth base island, the sixth base island, and the seventh base island, The first gate pin is located on the fourth base island, and the first gate pin is connected to the control end of the high-side power unit by wire bonding, The first Kelvin pin is located on the fifth base island, and the first Kelvin pin is connected to the second end of the high-side power unit by wire bonding, The second Kelvin pin is located on the sixth base island, and the second Kelvin pin is connected to the second end of the low-side power unit by wire bonding, The second gate pin is located on the seventh base island, and the second gate pin is connected to the control end of the low-side power unit by wire bonding, The first gate pin, the first Kelvin pin, the second Kelvin pin, and the second gate pin are arranged in sequence from top to bottom along the second side edge, The first base island to the seventh base island are independent and insulated from each other.

14. The package structure of claim 13, wherein, Further comprising: The lead frame is composed of the first base island to the seventh base island, the high-voltage power pin, the low-voltage power pin, the bridge arm midpoint pin, the low-side power unit signal pin, and the high-side power unit signal pin; and The plastic package covers the base islands in the lead frame, and the high-voltage power pin, the low-voltage power pin, the bridge arm midpoint pin, the low-side power unit signal pin, and the high-side power unit signal pin extend to the outside along the side edge of the plastic package.

15. The package structure of claim 14, wherein, Further comprising: An eighth base island is located in the lead frame; A first temperature sensor is located on the second base island, and the first temperature sensor is insulated from the second base island by a first insulation layer, the first temperature sensor includes a first end of the first temperature sensor and a second end of the first temperature sensor, and the second end of the first temperature sensor is connected to the low-voltage power pin or the second Kelvin pin by wire bonding; A first temperature detection pin is located on the eighth base island, and the first temperature detection pin is connected to the first end of the first temperature sensor by wire bonding, and the eighth base island is located between the fifth base island and the sixth base island.

16. The package structure of claim 14, wherein, Further comprising: An eighth base island is located in the lead frame; A second temperature sensor is located on the third base island, and the second temperature sensor includes a first end of the second temperature sensor and a second end of the second temperature sensor, and the second end of the second temperature sensor is electrically connected to the third base island; A first temperature detection pin is located on the eighth base island, and the first temperature detection pin is connected to the first end of the second temperature sensor by wire bonding, and the eighth base island is located between the fifth base island and the sixth base island. A second temperature detection pin is led out from the third base island, and the second temperature detection pin is located between the low-voltage power pin and a power pin adjacent to the low-voltage power pin, and the power pin adjacent to the low-voltage power pin is the bridge arm midpoint pin and the high-voltage power pin, or the power pin adjacent to the low-voltage power pin is the bridge arm midpoint pin.

17. The package structure of claim 14, wherein, Further comprising: A ninth base island is located in the lead frame; A third temperature sensor is located on the third base island, and the third temperature sensor includes a first end of the third temperature sensor and a second end of the third temperature sensor, and the second end of the third temperature sensor is electrically connected to the third base island; A third temperature detection pin is located on the ninth base island, and the third temperature detection pin is connected to the first end of the third temperature sensor by wire bonding, and the ninth base island is located between the fifth base island and the sixth base island. A third temperature detection pin is located on the ninth base island, and the third temperature detection pin is connected to the first end of the third temperature sensor by wire bonding. The third temperature detection pin is located between the low-voltage power pin and a power pin adjacent to the low-voltage power pin. The power pin adjacent to the low-voltage power pin is the bridge arm midpoint pin or the high-voltage power pin.

18. The package structure of claim 13, wherein, The first surface of the high-side power unit is opposite to the second surface, and the second surface of the high-side power unit faces the first surface of the first base island. The first end of the high-side power unit led out from the second surface of the high-side power unit is connected to the first surface of the first base island. The first surface of the high-side power unit leads out the second end and the control end of the high-side power unit. The first surface of the low-side power unit is opposite to the second surface, and the second surface of the low-side power unit faces the first surface of the second base island. The first end of the low-side power unit led out from the second surface of the low-side power unit is connected to the first surface of the second base island. The first surface of the low-side power unit leads out the second end and the control end of the low-side power unit.

19. The package structure of claim 4, wherein, The high-side power unit includes a first insulated gate bipolar transistor and a first fast recovery diode. The base of the first insulated gate bipolar transistor serves as the control end of the high-side power unit. The collector of the first insulated gate bipolar transistor is connected to the cathode of the first fast recovery diode and serves as the first end of the high-side power unit. The emitter of the first insulated gate bipolar transistor is connected to the anode of the first fast recovery diode and serves as the second end of the high-side power unit.

20. The package structure of claim 4, wherein, The low-side power unit includes a second insulated gate bipolar transistor and a second fast recovery diode. The base of the second insulated gate bipolar transistor serves as the control end of the low-side power unit. The collector of the second insulated gate bipolar transistor is connected to the cathode of the second fast recovery diode and serves as the first end of the low-side power unit. The emitter of the second insulated gate bipolar transistor is connected to the anode of the second fast recovery diode and serves as the second end of the low-side power unit.

21. The package structure of claim 4, wherein, The high-side power unit includes a first metal-oxide semiconductor field effect transistor. The gate of the first metal-oxide semiconductor field effect transistor serves as the control end of the high-side power unit. The drain of the first metal-oxide semiconductor field effect transistor serves as the first end of the high-side power unit. The source of the first metal-oxide semiconductor field effect transistor serves as the second end of the high-side power unit.

22. The package structure of claim 4, wherein, The low-side power unit comprises a second metal-oxide semiconductor field effect transistor, a gate of the second metal-oxide semiconductor field effect transistor serving as a control terminal of the low-side power unit, a drain of the second metal-oxide semiconductor field effect transistor serving as a first terminal of the low-side power unit, and a source of the second metal-oxide semiconductor field effect transistor serving as a second terminal of the low-side power unit.

23. The package structure of claim 1, wherein, Further comprising: a plurality of base islands, each of the plurality of base islands corresponding to one of the high-voltage power pin, the low-voltage power pin, the bridge arm midpoint pin, the low-side power unit signal pin, and the high-side power unit signal pin; a lead frame composed of the plurality of base islands, the high-voltage power pin, the low-voltage power pin, the bridge arm midpoint pin, the low-side power unit signal pin, and the high-side power unit signal pin; and a plastic package covering the plurality of base islands, the high-voltage power pin, the low-voltage power pin, the bridge arm midpoint pin, the low-side power unit signal pin, and the high-side power unit signal pin in the lead frame, the plurality of base islands, the high-voltage power pin, the low-voltage power pin, the bridge arm midpoint pin, the low-side power unit signal pin, and the high-side power unit signal pin extending to the outside along the side of the plastic package.

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