Device for HTRB reliability experiment of power semiconductor module
By designing an experimental setup for components such as temperature controllers, relays, heating rods, thermocouples, and heat dissipation plates, the problem of the lack of dedicated HTRB experimental equipment in the existing technology has been solved, enabling efficient and safe reliability testing of power semiconductor modules and meeting the AEC-Q101 standard.
Patent Information
- Application Number
- CN202423161470.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-20
- Publication Date
- 2026-01-06
- Estimated Expiration
- 2034-12-20
AI Technical Summary
The lack of dedicated HTRB testing equipment in current technology leads to unstable and inefficient reliability testing of power semiconductor modules.
Design an experimental setup that includes a temperature controller, relay, heating rod, thermocouple, heat sink, and DC regulated power supply. By combining these components, the temperature and voltage output of the power semiconductor module can be controlled, leakage current can be monitored, and the stability and efficiency of the experiment can be ensured.
A simple and reasonable HTRB reliability test device is provided, which realizes efficient and safe reliability testing of power semiconductor modules and meets the test requirements of AEC-Q101 standard.
Smart Images
Figure CN223770326U_ABST
Abstract
Description
Technical Field
[0001] This utility model belongs to the field of HTRB reliability testing technology for power semiconductor modules, and relates to an apparatus for HTRB reliability testing of power semiconductor modules. Background Technology
[0002] HTRB (High Temperature Reverse Bias) aging test is a method for evaluating the reliability of semiconductor devices under high temperature, high humidity, and reverse bias voltage conditions. This test is particularly critical for applications with extremely high reliability requirements, such as automotive, industrial, and military applications.
[0003] HTRB testing aims to identify potential defects generated during the manufacturing process that could lead to premature device failure without aging treatment. Simultaneously, by operating semiconductor devices under specific conditions, HTRB testing reveals electrical failure modes caused by time and stress.
[0004] According to the AEC-Q101 standard, the test is conducted for 1000 hours at the maximum DC reverse voltage, while the junction temperature is controlled to prevent thermal runaway. The ambient temperature TA can be adjusted downwards from Ta(MAX) as needed. The standard requires simultaneous testing of 3 batches * 77 devices to ensure the representativeness and statistical significance of the data. Leakage current must be monitored in real time during the test, and the static parameters of the devices must be measured before and after aging. Therefore, an apparatus for HTRB reliability testing of power semiconductor modules is designed. Utility Model Content
[0005] The purpose of this invention is to solve the problem of the lack of dedicated HTRB experimental equipment, and to provide a device with a simple and reasonable structure, high efficiency, safety and stable operation for HTRB reliability testing of power semiconductor modules.
[0006] This utility model is achieved through the following technical solution: a device for HTRB reliability testing of power semiconductor modules, comprising a device body, which consists of a temperature controller, a relay, a heating rod, a thermocouple, and a heat dissipation plate mounted on a placement platform. The heat dissipation plate contains a thermocouple and a heating rod, and a power semiconductor module is placed on the heat dissipation plate. The thermocouple is connected to one end of the temperature controller via a cable, and the other end of the thermocouple is connected to one side of the relay. The other side of the relay is connected to the heating rod on the heat dissipation plate via a cable. The heating rod is used to heat the semiconductor module. The temperature controller is used to detect and control the experimental temperature. The relay is used to control the entire switching circuit, thereby achieving control and protection of the temperature controller. The thermocouple is used to provide feedback of the actual temperature to the temperature controller. A DC regulated power supply is mounted outside the placement platform and connected to the power semiconductor module. This DC regulated power supply is used to output the voltage required for the power semiconductor module experiment and to check the leakage current during the experiment.
[0007] Preferably, the top surface of the placement platform is provided with a heat insulation plate, and the temperature controller, relay, heating rod, thermocouple, and heat dissipation plate are all placed on the heat insulation plate and fixed by screws and aluminum profiles, so that the temperature controller, relay, heating rod, thermocouple, and heat dissipation plate form a multi-layer frame, which facilitates the experiment.
[0008] Preferably, the connecting cables between the temperature controller, relay, heating rod, thermocouple, heat sink, and DC regulated power supply are made of silicone rubber wires.
[0009] Preferably, the power semiconductor module is fixed to a heat dissipation plate after a thermally conductive layer is coated on its substrate.
[0010] Preferably, there are at least two heating rods, which are respectively arranged on the left and right sides of the thermocouple to ensure the heating effect on the power semiconductor module.
[0011] Preferably, the thermally conductive layer is thermally conductive silicone grease.
[0012] The beneficial effects of this utility model are as follows:
[0013] This invention includes a DC regulated power supply, a temperature controller, a relay, a heating rod, a thermocouple, a heat sink, a heat insulation plate, and silicone rubber wires. These components form a simple experimental setup for HTRB reliability testing of power semiconductor modules. The temperature of the power semiconductor module is adjusted using the combination of the temperature controller, relay, heating rod, thermocouple, and heat sink. The required voltage is output via the DC regulated power supply, and leakage current is monitored during the experiment. The entire experimental process is simple, efficient, and stable. Attached Figure Description
[0014] Figure 1 This is a schematic diagram of the overall structure of this utility model. Detailed Implementation
[0015] To enable those skilled in the art to more clearly understand the purpose, technical solution and advantages of this utility model, the present utility model will be further described below in conjunction with the accompanying drawings and embodiments.
[0016] In the description of this utility model, it should be understood that the orientation or positional relationship indicated by terms such as "upper", "lower", "left", "right", "inner", "outer", "horizontal", and "vertical" are based on the orientation or positional relationship shown in the accompanying drawings and are only for the convenience of describing this utility model, and are not intended to indicate or imply that the device or component referred to must have a specific orientation, and therefore should not be construed as a limitation of this utility model.
[0017] The present invention will now be described in detail with reference to the accompanying drawings: Figure 1 As shown, an apparatus for HTRB reliability testing of a power semiconductor module includes a main body comprising a temperature controller 2, a relay 3, a heating rod 4, a thermocouple 5, and a heat dissipation plate 6 mounted on a placement platform 1. The heat dissipation plate 6 houses the thermocouple 5 and the heating rod 4, and a power semiconductor module (not shown) is placed on the heat dissipation plate 6. The thermocouple 5 is connected to one end of the temperature controller 2 via a cable, and the other end of the thermocouple 5 is connected to one side of the relay 3. The other side of the relay 3 is connected to the heating rod 4 on the heat dissipation plate 6 via a cable. The heating rod 4 is used to heat the semiconductor module. The temperature controller 2 is used to detect and control the experimental temperature. The relay 3 is used to control the entire switching circuit, thereby controlling and protecting the temperature controller 2. The thermocouple 5 is used to provide feedback of the actual temperature to the temperature controller 2. A DC regulated power supply 7 is mounted outside the placement platform 1 and connected to the power semiconductor module. The DC regulated power supply 7 is used to output the voltage required for the power semiconductor module experiment and to monitor leakage current during the experiment.
[0018] The heat dissipation plate in this invention needs to be processed first to ensure that two heating rods and a thermocouple can be inserted precisely, and then it is fixed on the heat insulation plate. The temperature controller and relay are fixed on the heat insulation plate and connected to each other. The DC regulated power supply can be placed in the appropriate position according to actual needs, without any limitation.
[0019] The top surface of the placement platform 1 is equipped with a heat insulation plate 8. The temperature controller 2, relay 3, heating rod 4, thermocouple 5, and heat dissipation plate 6 are all placed on the heat insulation plate 8 and fixed with screws and aluminum profiles, forming a multi-layer frame for easy experimentation. The connecting cables between the temperature controller 2, relay 3, heating rod 4, thermocouple 5, heat dissipation plate 6, and DC regulated power supply 7 are silicone rubber wires 9. The power semiconductor module substrate is coated with a thermally conductive layer and then fixed to the heat dissipation plate 6. There are at least two heating rods 4, respectively located on the left and right sides of the thermocouple 5, to ensure the heating effect on the power semiconductor module. The thermally conductive layer is thermally conductive silicone grease.
[0020] The installation and experimental steps of this utility model are as follows:
[0021] S1. Apply thermal grease to the power semiconductor module substrate and fix it to the heat dissipation plate.
[0022] S2. Connect the power semiconductor module to the DC regulated power supply using a PCB board clamp or by direct wiring.
[0023] S3. Turn on the temperature controller and adjust it to the required experimental temperature;
[0024] S4. Turn on the DC regulated power supply and adjust it to the required experimental voltage;
[0025] S5. Adjust the DC regulated power supply, set the upper limit of the power supply voltage and the upper limit of the current, observe the voltage and current of the DC regulated power supply, and start the experiment if there is no abnormality.
[0026] S6. After the experimental time requirement is reached, remove the module, perform static measurements and other tests, and the experiment is completed.
[0027] The specific embodiments described herein are merely illustrative of the principles and effects of this utility model and are not intended to limit the scope of this utility model. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of this utility model. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in this utility model should still be covered by the claims of this utility model.
Claims
1. An apparatus for HTRB reliability experiment of a power semiconductor module, comprising an apparatus body, characterized in that: The device body is composed of a temperature controller (2), a relay (3), a heating rod (4), a thermocouple (5) and a heat dissipation cold plate (6) arranged on a placing platform (1), the heat dissipation cold plate (6) is internally provided with the thermocouple (5) and the heating rod (4), and a power semiconductor module is placed on the heat dissipation cold plate (6), the thermocouple (5) is connected with one end of the temperature controller (2) through a cable, the other end of the thermocouple (5) is connected with one side of the relay (3), the other side of the relay (3) is connected with the heating rod (4) on the heat dissipation cold plate (6) through a cable, and the heating rod (4) is used for heating the semiconductor module; the temperature controller (2) is used for detecting and controlling the temperature of the experiment; the relay (3) is used for controlling the whole switching circuit, so as to realize the control and protection of the temperature controller (2), the thermocouple (5) is used for feeding back the actual temperature to the temperature controller (2), a direct current stabilized power supply (7) is arranged outside the placing platform (1), the direct current stabilized power supply (7) is connected with the power semiconductor module, and is used for outputting the voltage required by the power semiconductor module experiment and viewing the leakage current in the experiment.
2. The device for HTRB reliability experiments of power semiconductor modules according to claim 1, characterized in that: The top surface of the placing platform (1) is provided with an insulating plate (8), the temperature controller (2), the relay (3), the heating rod (4), the thermocouple (5) and the heat dissipation cold plate (6) are placed on the insulating plate (8) and fixed through screws and aluminum profiles, so that a multilayer frame is formed between the temperature controller (2), the relay (3), the heating rod (4), the thermocouple (5) and the heat dissipation cold plate (6), and the experiment is facilitated.
3. The apparatus for HTRB reliability experiment of power semiconductor modules according to claim 1, characterized in that: The connecting cables between the temperature controller (2), the relay (3), the heating rod (4), the thermocouple (5), the heat dissipation cold plate (6) and the direct current stabilized power supply (7) are silicon rubber wires (9).
4. The apparatus for HTRB reliability experiment of power semiconductor modules according to claim 1, characterized in that: The substrate of the power semiconductor module is coated with a heat conducting layer and fixed on the heat dissipation cold plate (6).
5. The apparatus for HTRB reliability test of power semiconductor modules according to claim 3, characterized in that: The heating rod (4) is at least two, which are arranged on the left and right sides of the thermocouple (5), and are used for ensuring the heating effect of the power semiconductor module.
6. The apparatus for HTRB reliability experiment of power semiconductor modules according to claim 4, characterized in that: The heat conducting layer is a heat conducting silicone grease.