Power conversion device and power supply cabinet

Abstract

The embodiment of the utility model provides a power conversion device and a power supply cabinet comprising the same, and relates to the technical field of energy. The power conversion device comprises a device shell, a first circuit board, a substrate, a power device and a radiator, the first circuit board is fixed in the device shell, the first circuit board comprises a containing groove, and a groove opening of the containing groove is located in one surface of the first circuit board; the substrate is fixed in the device shell, the substrate is located on one side of the first circuit board and shields the containing groove, the substrate comprises a first wiring layer, a first insulating layer and a first metal layer, the first insulating layer is fixed between the first wiring layer and the first metal layer, the first wiring layer faces the containing groove, and the first wiring layer is electrically connected with the first circuit board; the power device is fixed on the first wiring layer and is at least partially located in the accommodating groove; the radiator is located in the device shell or partially extends out of the device shell, and the radiator is located on the side, away from the first circuit board, of the substrate and fixed to the substrate.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of energy, in particular to a power conversion device and a power cabinet. BACKGROUND

[0002] With the development of electronic products towards high frequency and high density, SMD (Surface Mount Device) gradually replaces DIP (Dual In-line Package) due to its smaller parasitic parameters and higher production efficiency. For example, the power device of the power conversion device can exist in the form of SMD and be welded on the pad of the circuit board.

[0003] Among them, the heat dissipation of the power device is particularly important for the power conversion device. In the related art, a plurality of through holes are arranged on the pad of the circuit board to transfer the heat of the power device to the heat sink. However, the plurality of through holes can cause the cavity ratio of the welding surface of the power device to increase, thereby reducing the effective heat dissipation area of the power device and resulting in poor heat dissipation effect of the power device. CONTENT OF THE UTILITY MODEL

[0004] The present application provides a power conversion device and a power cabinet comprising the power conversion device, which can improve the heat dissipation effect of the power device.

[0005] To achieve the above-mentioned purpose, the present application adopts the following technical solutions:

[0006] In a first aspect, the present application provides a power conversion device for converting input electrical energy and outputting, the power conversion device comprising a device shell, a first circuit board, a substrate, a power device and a heat sink, the first circuit board being fixed in the device shell, the first circuit board comprising a receiving groove, the groove opening of the receiving groove being located on one surface of the first circuit board; the substrate being fixed in the device shell, the substrate being located on one side of the first circuit board and shielding the receiving groove, the substrate comprising a first wiring layer, a first insulating layer and a first metal layer, the first insulating layer being fixed between the first wiring layer and the first metal layer, the first wiring layer facing the receiving groove, the first wiring layer being electrically connected with the first circuit board; the power device being fixed to the first wiring layer and at least partially located in the receiving groove; the heat sink being located in the device shell or partially extending out of the device shell, the heat sink being located on the side of the substrate away from the first circuit board and being fixed to the substrate.

[0007] The power conversion device realizes power conversion of input electric energy through on-off of a switch tube in a power device. A first trace layer on a substrate is used to arrange the power device, and the power device is electrically connected to a first circuit board through the first trace layer. In addition, a receiving groove in the first circuit board can receive the power device, so as to reduce the distance between the first circuit board and the substrate. The first metal layer of the substrate has good heat conduction capacity, and the heat of the power device can be transferred outward through the first metal layer, so as to realize heat dissipation of the power device. In addition, the first insulating layer of the substrate can separate the first trace layer and the first metal layer, so as to reduce the possibility that the traces in the first trace layer are conducted to each other through the first metal layer. In the present application, the heat of the power device is directly transferred outward through the substrate with strong heat conduction capacity, so as to effectively improve the heat dissipation effect of the power device.

[0008] In an embodiment of the present application, the first circuit board further comprises a third metal layer, and the power device is located between the third metal layer and the first metal layer.

[0009] Electromagnetic compatibility (EMC) is particularly important for the application of the power device. The high-frequency switching of the power device can cause EMC interference problems. In particular, when the power device exists in the form of a surface mount device, the power device has no pin extending outward, so a magnetic ring (used to solve the EMC interference problem) cannot be sleeved on the pin of the power device. If a large number of absorption circuits are arranged outside the power device to solve the EMC problem of the power device, the performance of the power device itself will be reduced.

[0010] Therefore, in the present application, the power device is arranged between the third metal layer of the first circuit board and the first metal layer of the substrate. Through the third metal layer and the first metal layer respectively located on both sides of the power device, a good electromagnetic shielding effect is realized, so as to improve the EMC performance and the ability to resist external interference of the power device.

[0011] In an embodiment of the present application, the orthographic projection of the power device on the surface of the third metal layer is located inside the outer edge of the surface of the third metal layer.

[0012] A larger third metal layer is used to cover the position of the power device, so that the shielding area of the third metal layer is wider, and the EMC performance and the ability to resist external interference of the power device are further optimized.

[0013] In an embodiment of the present application, the third metal layer is exposed on the side of the first circuit board away from the substrate.

[0014] The third metal layer is exposed outside the first circuit board, the distance between the third metal layer and the substrate is larger, the size of the accommodating groove in the thickness direction of the first circuit board is larger, the internal space of the accommodating groove is larger, and the accommodating capacity of the accommodating groove is improved. For example, the internal space of the accommodating groove can accommodate a power device with a larger volume, reducing the possibility of interference between the internal surface of the accommodating groove and the installation of the power device; for another example, the internal space of the accommodating groove can accommodate more heat-conducting materials, thereby further improving the heat dissipation capacity of the power device.

[0015] In an embodiment of the present application, the third metal layer is fixed to the inner surface of the accommodating groove facing the substrate.

[0016] The accommodating groove is equivalent to a groove formed on the first circuit board. The third metal layer is arranged on the inner surface of the accommodating groove facing the substrate, for example, a layer of metal is electroplated on the inner surface of the accommodating groove as the third metal layer; for another example, the internal wiring layer exposed after the first circuit board is excavated to form the accommodating groove can also be used as the third metal layer. By arranging the third metal layer inside the first circuit board, the surface of the first circuit board away from the substrate can be arranged with pads, wiring layers, terminal connectors, etc. as needed, thereby reducing the influence of the arrangement of the third metal layer on the surface layout of the first circuit board and improving the flexibility of the surface layout of the first circuit board.

[0017] In an embodiment of the present application, the third metal layer is located between the surface of the first circuit board away from the substrate and the surface of the accommodating groove facing the substrate.

[0018] By this design, the third metal layer is neither exposed outside the first circuit board nor exposed inside the accommodating groove. For example, part of the internal wiring layer in the first circuit board (multi-layer circuit board) is used as the third metal layer, and no additional third metal layer needs to be arranged in the first circuit board, thereby reducing the processing steps and facilitating the production and manufacturing of the first circuit board. Moreover, the part of the surface of the first circuit board away from the substrate and opposite to the power device can be arranged with pads, wiring layers, terminal connectors, etc. as needed, thereby improving the flexibility of the surface layout of the first circuit board.

[0019] In an embodiment of the present application, the power conversion device further comprises an auxiliary device, the auxiliary device is packaged with at least one of a driving circuit, a protection circuit and an absorption circuit, the driving circuit is used to drive the power device, the protection circuit is used to detect the current input or output by the power device, and the absorption circuit is used to clamp the voltage between the first pole and the second pole of the power device; the first circuit board further comprises a second wiring layer, the second wiring layer is fixed to the inner surface of the accommodating groove facing the substrate, the second wiring layer is electrically connected with the first wiring layer, and the auxiliary device is fixed to the second wiring layer.

[0020] Inside the accommodating groove of the first metal layer, a trace layer for fixing (for example, welding) auxiliary devices can be arranged, so that the accommodating groove can accommodate not only the power device but also the auxiliary devices related to the power device. For example, the auxiliary devices can encapsulate the drive circuit, protection circuit or absorption circuit of the power device, etc. In this way, the stacking design of the limited space is realized, and the utilization rate of the accommodating groove and the density of the devices in the first circuit board are improved. In addition, the loop length of the power device periphery can also be reduced, thereby reducing the parasitic inductance and improving the performance of the power device.

[0021] In an embodiment of the present application, the power conversion device further comprises at least one first conductive body, a part of each first conductive body is located in the first circuit board, one end of each first conductive body protrudes from the first circuit board towards the surface of the substrate and is connected with the first metal layer, and the other end of each first conductive body is connected with the third metal layer.

[0022] Through the first conductive body, the third metal layer of the first circuit board and the first metal layer of the substrate are electrically connected, and any one of the third metal layer and the first metal layer can be connected with a point or a grounding point in the circuit where the potential does not change, so that a good electromagnetic shielding effect can be achieved. In addition, when any one of the third metal layer and the first metal layer is connected with the electrical network of the power conversion device, in addition to achieving a good electromagnetic shielding effect, the third metal layer and the first metal layer can also strengthen the current-carrying capacity, effectively reduce the line loss, and improve the transmission efficiency and stability of the electric energy.

[0023] In addition, since the first conductive body connects the third metal layer and the first metal layer, the first conductive body is located outside the power device, and the first conductive body is metal, so that the anti-interference ability of the side of the power device can also be improved through the first conductive body, and the EMC performance and the anti-external interference ability of the power device are further improved.

[0024] In an embodiment of the present application, a plurality of first conductive bodies are arranged, and the plurality of first conductive bodies surround the outer periphery of the power device.

[0025] The plurality of first conductive bodies surround the outer periphery of the power device, and the power device is wrapped by the third metal layer, the first metal layer and the plurality of first conductive bodies connecting the two, so that a good electromagnetic shielding effect is achieved, and the EMC performance of the power device is further optimized.

[0026] In an embodiment of the present application, the power conversion device further comprises a second conductive body, a part of the second conductive body is located in the first circuit board, the first circuit board further comprises a third trace layer arranged away from the substrate, one end of the second conductive body protrudes from the first circuit board towards the surface of the substrate and is connected with the first trace layer, and the other end of the second conductive body is connected with the third trace layer.

[0027] The second conductive body realizes the electrical connection between the first trace layer and the first circuit board, that is, the second conductive body and the first trace layer can realize the electrical connection between the power device and the first circuit board, so that the current can flow between the power device and the first circuit board.

[0028] In an embodiment of the present application, the power conversion device further comprises a heat sink, the heat sink is located in the device shell or partially extends out of the device shell, and the heat sink is located on the side of the substrate away from the first circuit board and is fixed to the substrate.

[0029] The heat of the power device can be transmitted to the heat sink through the substrate, and the heat sink can realize heat dissipation of the power device, so that the heat dissipation efficiency of the power device is improved. In the present application, the heat of the power device is directly transmitted to the heat sink through the substrate without passing through the first circuit board, so that the heat transmission path is shortened, and the heat dissipation effect of the power device is effectively improved.

[0030] In an embodiment of the present application, the substrate further comprises a second insulating layer and a second metal layer, the second insulating layer is fixed between the first metal layer and the second metal layer, and the heat sink is fixedly connected with the second metal layer.

[0031] The substrate comprises the second insulating layer in addition to the first insulating layer, so that the insulation performance of the substrate is improved, the second insulating layer is located between the heat sink and the first metal layer, and the heat sink and the first metal layer are mutually insulated. In addition, the second metal layer is arranged between the heat sink and the second insulating layer, the second metal layer not only enhances the heat conduction capacity of the substrate, but also provides a mounting position for the heat sink, for example, the heat sink can be welded on the second metal layer, and for another example, the heat sink can be locked on the second metal layer by bolts. By arranging the second insulating layer and the second metal layer, the insulation performance of the substrate is improved, and the connection between the heat sink and the substrate is facilitated.

[0032] In an embodiment of the present application, the accommodating groove is filled with potting glue, and the potting glue is connected with the substrate.

[0033] The potting glue filled in the accommodating groove can realize insulation reinforcement of the power device. In addition, the heat conduction capacity of the accommodating groove can be improved, so that the heat of the power device can be quickly transmitted outward through the potting glue, for example, the heat of the power device is transmitted to the substrate through the potting glue, and then is transmitted to the heat sink through the substrate, so that efficient heat dissipation of the power device is realized. In addition, the potting glue can also play a waterproof role, the power device wrapped in the potting glue has higher reliability, and the stability of the operation of the power conversion device is improved.

[0034] In an embodiment of the present application, the power conversion device further comprises a second circuit board fixed in the device shell, the first circuit board is fixed on the second circuit board, the surface of the first circuit board is perpendicular to the surface of the second circuit board, the surface of the first circuit board facing the substrate comprises an insulating region, and the insulating region is at least partially located between the substrate and the second circuit board.

[0035] The first circuit board can be fixed on the second circuit board in a vertical mounting manner. Since the surface of the first circuit board is perpendicular to the surface of the second circuit board, the substrate on the first circuit board is closer to the second circuit board. The insulating region arranged between the substrate and the second circuit board reduces the possibility of conduction between the substrate and the second circuit board, for example, reduces the possibility of arc generation between the substrate and the second circuit board when the first metal layer is connected to the electrical network of the power conversion device. In addition, the possibility of conduction between the substrate and the first circuit board, and the possibility of conduction between the substrate and the pins (for connecting the second circuit board) of the first circuit board are also reduced, meeting the safety requirements.

[0036] In a second aspect of the present application, a power supply cabinet is provided, comprising a cabinet body and a plurality of power conversion devices, the plurality of power conversion devices are located in the cabinet body, and the plurality of power conversion devices are connected in parallel.

[0037] The power conversion device is installed in the cabinet body, and the power conversion device can perform power conversion on the input electrical energy. The power conversion device comprises a device shell, a power device and a substrate connected to each other in the device shell, and the heat of the power device is transferred outward through the substrate, effectively improving the heat dissipation effect of the power device. In addition, the power supply cabinet provided by the present application comprises the power conversion device described above, so that the power supply cabinet provided by the present application and the power conversion device of the above technical solution can solve the same technical problems and have the same technical effects, which will not be described here. BRIEF DESCRIPTION OF DRAWINGS

[0038] Figure 1 A structural schematic diagram of a power conversion device provided by an embodiment of the present application;

[0039] Figure 2 A structural schematic diagram of a power supply cabinet provided by an embodiment of the present application;

[0040] Figure 3 An internal structural schematic diagram of a power conversion device provided by an embodiment of the present application;

[0041] Figure 4 An internal structural schematic diagram of another power conversion device provided by an embodiment of the present application;

[0042] Figure 5 An internal structural schematic diagram of another power conversion device provided by an embodiment of the present application;

[0043] Figure 6 Another internal structure diagram of a power conversion device provided by an embodiment of the present application is shown in FIG. 9;

[0044] Figure 7 A structure diagram of a first circuit board and a substrate provided by an embodiment of the present application is shown in FIG. 10;

[0045] Figure 8 A structure diagram of another substrate provided by an embodiment of the present application is shown in FIG. 11;

[0046] Figure 9 A structure diagram of another first circuit board provided by an embodiment of the present application is shown in FIG. 12;

[0047] Figure 10 A projection view of a power device on a surface of a third metal layer provided by an embodiment of the present application is shown in FIG. 13;

[0048] Figure 11 A structure diagram of a second conductive body provided by an embodiment of the present application is shown in FIG. 14;

[0049] Figure 12 A structure diagram of another first circuit board provided by an embodiment of the present application is shown in FIG. 15;

[0050] Figure 13 A structure diagram of another first circuit board provided by an embodiment of the present application is shown in FIG. 16;

[0051] Figure 14 A structure diagram of another first circuit board provided by an embodiment of the present application is shown in FIG. 17;

[0052] Figure 15 A structure diagram of a potting adhesive provided by an embodiment of the present application is shown in FIG. 18;

[0053] Figure 16 Structure diagrams of two potting holes provided by an embodiment of the present application are shown in FIG. 19;

[0054] Figure 17 A structure diagram of an insulating region provided by an embodiment of the present application is shown in FIG. 20.

[0055] Reference signs:

[0056] 100 - power conversion device; 1 - device housing; 11 - opening; 2 - first circuit board; 21 - accommodating groove; 211 - potting glue; 22 - third metal layer; 23 - second trace layer; 24 - third trace layer; 25 - potting hole; 27 - pin; 27 - insulation area; 3 - substrate; 31 - first trace layer; 32 - first insulation layer; 33 - first metal layer; 34 - second insulation layer; 35 - second metal layer; 4 - heat sink; 41 - heat conduction plate; 42 - fin; 5 - power device; 6 - second circuit board; 7 - first conductive body; 8 - second conductive body; 9 - auxiliary device; 200 - power supply cabinet; 201 - cabinet body; 202 - circuit breaker. DETAILED DESCRIPTION

[0057] The technical solutions in the embodiments of the present application will be described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only some of the embodiments of the present application, not all the embodiments of the present application.

[0058] In the present application, unless otherwise explicitly specified and limited, the orientation or position relationship indicated by the terms "upper", "lower", "front", "back", "left", "right" and the like can include but not limited to the orientation defined by the relative placement of the components in the drawings, wherein these directional terms can be a relative concept, which are used for relative description and clarification, and can be changed accordingly according to the change of the placement of the components in the drawings, and cannot be understood as a limitation on the present application.

[0059] In the present application, the terms "first", "second", and the like are only for descriptive purposes, and are used to distinguish one element from another element, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined with "first", "second", and the like can explicitly or implicitly include one or more of the features.

[0060] In the present application, unless otherwise explicitly specified and limited, the meaning of "multiple" is two or more.

[0061] In addition, in the present application, the words "exemplary" or "for example" are used to mean serving as an example, instance, or illustration. Any embodiment or design solution described as "exemplary" or "for example" in the present application should not be interpreted as being more preferred or advantageous than other embodiments or design solutions. Rather, the use of "exemplary" or "for example" is intended to present relevant concepts in a concrete manner.

[0062] In the drawings of the embodiments of the present application, the entity structures of components, assemblies, and the like are represented by guide lines; the structures composed of multiple components are represented by guide lines in parentheses or with solid arrows; the hollow structures such as openings, holes, spaces, cavities, and the like are represented by guide lines with hollow arrows.

[0063] An embodiment of the present application provides a power conversion device 100, wherein the power conversion device 100 is used to convert input power and output the converted power, for example, the power conversion device 100 can convert direct current into alternating current; for another example, the power conversion device 100 can convert alternating current into direct current; for another example, the power conversion device 100 can perform voltage boosting or voltage reduction. The power conversion device 100 of the present application can be an inverter, a rectifier, an on-board charger (OBC), a power module (for example, a DC-DC module, an AC-DC module) in a charging device, and the like. Figure 1 An embodiment of the present application shows a structure of a power conversion device 100, referring to Figure 1 The power conversion device 100 is a photovoltaic inverter.

[0064] In addition, Figure 2 An embodiment of the present application shows a power supply cabinet 200 including a power conversion device 100, for example, the power supply cabinet 200 is a cabinet type uninterruptible power supply (UPS), wherein the power supply cabinet 200 includes a cabinet body 201, a plurality of power conversion devices 100 and a plurality of circuit breakers 202, and the like, the plurality of power conversion devices 100 are stacked in the cabinet body 201 along the height direction of the cabinet body 201, and the plurality of power conversion devices 100 are connected in parallel, and the plurality of circuit breakers 202 are located above the plurality of power conversion devices 100. For another example, the power supply cabinet 200 can also be a charging pile, and the plurality of parallel power conversion devices 100 are located in the cabinet body of the charging pile, and the charging gun is electrically connected to the plurality of power conversion devices 100 through a cable.

[0065] Figure 3 An embodiment of the present application shows an internal structure of a power conversion device 100, referring to Figure 3 The power conversion device 100 includes a device shell 1, wherein the device shell 1 can be any shell with a receiving function. In addition, the power conversion device 100 further includes a first circuit board 2, a substrate 3, a heat sink 4 and a power device 5, wherein the substrate 3 is located between the first circuit board 2 and the heat sink 4, and the power device 5 is connected to the substrate 3 and at least partially located in the first circuit board 2 (which will be described in detail below). In the embodiment shown in Figure 3 In the embodiment shown, the first circuit board 2, the substrate 3, the heat sink 4 and the power device 5 are all located in the device shell 1.

[0066] Figure 4 An embodiment of the present application shows another internal structure of a power conversion device 100, referring to Figure 4The device shell 1 is provided with an opening 11, the first circuit board 2, the substrate 3 and the power device 5 are located in the device shell 1, and the heat sink 4 passes through the opening 11 so that a part of the heat sink 4 is connected with the substrate 3 in the device shell 1 and another part of the heat sink 4 extends out of the device shell 1. Figure 5 Another internal structure of the power conversion device 100 is exemplarily shown, referring to Figure 5 The first circuit board 2, the substrate 3 and the power device 5 are located in the device shell 1, the heat conducting plate 41 of the heat sink 4 is integrally formed with the device shell 1, and the fins 42 of the heat sink 4 are located outside the device shell 1.

[0067] In addition, Figure 6 Another internal structure of the power conversion device 100 is exemplarily shown, referring to Figure 6 The power conversion device 100 further comprises a second circuit board 6, and the first circuit board 2 can be fixed on the second circuit board 6 in a vertical installation manner, that is, any surface of the first circuit board 2 is perpendicular (not absolutely perpendicular, allowing an error of ±10°) to any surface of the second circuit board 6. The electrical connection between the first circuit board 2 and the second circuit board 6 can realize the flow of current on the first circuit board 2 and the second circuit board 6. In other embodiments, the first circuit board 2 can also be installed on the second circuit board 6 in a horizontal installation manner, that is, any surface of the first circuit board 2 is parallel (not absolutely parallel, allowing an error of ±10°) to any surface of the second circuit board 6.

[0068] In Figure 6 The first circuit board 2, the substrate 3, the heat sink 4, the power device 5 and the second circuit board 6 are located in the device shell 1. In the case that the power conversion device 100 further comprises the second circuit board 6, the heat sink 4 can also extend out of the device shell 1.

[0069] In other embodiments, the power conversion device 100 can not comprise the heat sink 4 connected with the substrate 3.

[0070] Figure 7 A structure of the first circuit board 2 and a structure of the substrate 3 are exemplarily shown, referring to Figure 7 The first circuit board 2 comprises a receiving groove 21, and the groove opening of the receiving groove 21 is located on the surface of the first circuit board 2 facing the substrate 3. The substrate 3 is located on one side of the first circuit board 2 and covers the receiving groove 21, wherein the substrate 3 comprises a first wiring layer 31, a first insulating layer 32 and a first metal layer 33, the first insulating layer 32 is fixed between the first metal layer 33 and the first wiring layer 31, and the first wiring layer 31 faces the receiving groove 21. The first insulating layer 32 of the substrate 3 can separate the first wiring layer 31 and the first metal layer 33, thereby reducing the possibility that different wirings in the first wiring layer 31 are conducted to each other through the first metal layer 33.

[0071] The first trace layer 31 is electrically connected to the first circuit board 2, so that the current can flow between the first trace layer 31 and the first circuit board 2. For example, the power conversion device 100 further comprises a second conductive body 8. The second conductive body 8 can be provided in a plurality of forms, or in one form. The present application does not make specific limitations in this regard. Referring to Figure 7 , a part of the second conductive body 8 is located in the first circuit board 2. The first circuit board 2 comprises a third trace layer 24 arranged away from the substrate 3. One end of the second conductive body 8 extends from the first circuit board 2 towards the surface of the substrate 3 and is connected to the first trace layer 31. The other end of the second conductive body 8 is connected to the third trace layer 24. The end of the second conductive body 8 connected to the third trace layer 24 can extend from the surface of the first circuit board 2 away from the substrate 3, or can not extend out of the first circuit board 2. As long as the second conductive body 8 can connect the third trace layer 24 and the first trace layer 31, the electrical connection between the first trace layer 31 and the first circuit board 2 can be achieved through the second conductive body 8.

[0072] The second conductive body 8 can be any structure capable of conducting electricity. For example, the second conductive body 8 can be a metal column. For another example, the second conductive body 8 can be a metal part inside a conductive hole on the first circuit board 2.

[0073] The first trace layer 31 on the substrate 3 is used to accommodate the power device 5. The power device 5 is fixed to the first trace layer 31. Since the first trace layer 31 is electrically connected to the first circuit board 2, the power device 5 can be electrically connected to the first circuit board 2 through the first trace layer 31. In the case where the power device 5 is fixed to the first trace layer 31, the power device 5 is at least partially located in the accommodation groove 21. The accommodation groove 21 in the first circuit board 2 can accommodate the power device 5, thereby reducing the distance between the first circuit board 2 and the substrate 3.

[0074] Referring to Figure 7 , the heat sink 4 is located on the side of the substrate 3 away from the first circuit board 2 and is fixed to the substrate 3. In Figure 7 the embodiment shown, the heat sink 4 is fixedly connected (for example, welded or locked by bolts) to the first metal layer 33 of the substrate 3.

[0075] In other embodiments, Figure 8 another structure of the substrate 3 is shown by way of example. Referring to Figure 8 , the substrate 3 further comprises a second insulating layer 34. The second insulating layer 34 is located between the heat sink 4 and the first metal layer 33, so as to insulate the heat sink 4 and the first metal layer 33 from each other. The substrate 3 comprises the second insulating layer 34 in addition to the first insulating layer 32, which can improve the insulation performance of the substrate 3. In addition, referring to Figure 8The substrate 3 further comprises a second metal layer 35, and the second insulating layer 34 is fixed between the first metal layer 33 and the second metal layer 35, that is, the second metal layer 35 is arranged towards the heat sink 4. The second metal layer 35 is arranged between the heat sink 4 and the second insulating layer 34, and the second metal layer 35 not only enhances the heat conduction capacity of the substrate 3, but also provides a mounting position for the heat sink 4. For example, the heat sink 4 can be welded on the second metal layer 35, or the heat sink 4 can be locked on the second metal layer 35 by bolts, which facilitates the mounting of the heat sink 4 on the substrate 3.

[0076] The substrate 3 at least comprises the first metal layer 33 (in some embodiments, the substrate 3 further comprises the second metal layer 35), so that the substrate 3 has a good heat conduction capacity. The heat of the power device 5 can be transmitted to the heat sink 4 through the metal layer (for example, the first metal layer 33, and for another example, the first metal layer 33 and the second metal layer 35) of the substrate 3, and the heat of the power device 5 can be dissipated through the heat sink 4. In the present application, the heat of the power device 5 is directly transmitted to the heat sink 4 through the substrate 3, without the need to pass through the first circuit board 2 again, which shortens the heat transmission path and effectively improves the heat dissipation effect of the power device 5.

[0077] In the embodiments shown in the drawings, Figure 7 and Figure 8 In the embodiments shown in the drawings, the heat sink 4 is an air-cooled heat sink, and the heat sink 4 comprises a heat conduction plate 41 and a plurality of fins 42. The heat conduction plate 41 is fixedly connected (for example, bonded, welded, locked by bolts, etc.) with the substrate 3, and the plurality of fins 42 are fixed on the side of the heat conduction plate 41 away from the first circuit board 2. In some other embodiments, the heat sink 4 can further comprise a plurality of heat dissipation fins fixed between two adjacent fins 42. In some other embodiments, the heat sink 4 can also be a liquid-cooled heat sink. In the embodiments shown in the drawings hereinafter, the heat sink 4 is taken as an example of an air-cooled heat sink.

[0078] Due to the strong heat conduction capacity of the substrate 3, in the case that the power conversion device 100 does not comprise a heat sink 4 connected with the substrate 3, the heat of the power device 5 can be directly transmitted outward through the substrate 3 with strong heat conduction capacity, and good heat dissipation of the power device 5 can also be achieved.

[0079] The power conversion device 100 of this application converts input electrical energy by switching the switching transistor in the power device 5. Electromagnetic compatibility (EMC) is particularly important for the application of the power device 5. The high-frequency switching of the power device 5 can cause EMC interference, especially when the power device 5 is a surface-mount device. Without outward-extending leads, it's impossible to attach ferrite cores (used to address EMC interference) to the leads of the power device 5. If numerous absorption circuits are used externally to address the EMC issues of the power device 5, it often leads to a degradation in the performance of the power device 5 itself.

[0080] To address the aforementioned issues, in some embodiments, the first circuit board 2 further includes a third metal layer 22. Figure 9 An exemplary diagram shows another structure of the first circuit board 2, with reference to... Figure 9 The power device 5 is disposed between the third metal layer 22 of the first circuit board 2 and the first metal layer 33 of the substrate 3. Through the third metal layer 22 and the first metal layer 33 located on both sides of the power device 5, a good electromagnetic shielding effect can be achieved, thereby improving the EMC performance and anti-interference ability of the power device 5.

[0081] Among them, Figure 9 In the illustrated embodiment, the third metal layer 22 is fixed (e.g., bonded or electroplated) to the inner surface (B1) of the receiving groove 21 facing the substrate 3. The receiving groove 21 is equivalent to a recess formed on the first circuit board 2. The third metal layer 22 is disposed on the inner surface of the receiving groove 21 facing the substrate 3. For example, a layer of metal is electroplated on the inner surface (B1) of the receiving groove 21 as the third metal layer 22. Alternatively, the internal wiring layer exposed after the receiving groove 21 is cut out of the first circuit board 2 can also be used as the third metal layer 22; that is, the third metal layer 22 can be part of the internal wiring layer of the first circuit board 2 (multilayer circuit board).

[0082] The third metal layer 22 is disposed inside the first circuit board 2, and the portion of the first circuit board 2 facing away from the substrate 3 and opposite to the power device 5 is (…). Figure 9 The area within the dashed frame can be configured with pads, trace layers, terminals, etc., as needed, reducing the impact of setting the third metal layer 22 on the surface layout of the first circuit board 2 and improving the flexibility of the traces on the surface of the first circuit board 2.

[0083] In the case where the power conversion device 100 includes a third metal layer 22, in one embodiment, the third metal layer 22 covers a large area, for example... Figure 10An exemplary shows a projection of the power device 5 on the surface of the third metal layer 22. Referring to Figure 9 and Figure 10 , the orthographic projection of the power device 5 on the surface of the third metal layer 22 (any one surface, for example, the surface facing the power device 5) is located inside the outer edge of the surface of the third metal layer 22. The larger third metal layer 22 covers the position where the power device 5 is located, making the shielding area of the third metal layer 22 wider, further optimizing the EMC performance of the power device 5 and the ability to resist external interference.

[0084] In addition, in some embodiments, referring back to Figure 9 , the power conversion device 100 further comprises at least one first conductive body 7, through which the third metal layer 22 of the first circuit board 2 and the first metal layer 33 of the substrate 3 are electrically connected. For example, a part of each first conductive body 7 is located in the first circuit board 2, one end of each first conductive body 7 protrudes from the first circuit board 2 towards the surface of the substrate 3, the part of each first conductive body 7 protruding outside the first circuit board 2 passes through the first trace layer 31 and the first insulating layer 32 of the substrate 3, and is connected with the first metal layer 33 of the substrate 3, and the other end of each first conductive body 7 is connected with the third metal layer 22.

[0085] Connecting any one of the third metal layer 22 and the first metal layer 33 with a point or a grounding point in the circuit where the potential does not change abruptly can achieve good electromagnetic shielding effect. In addition, when any one of the third metal layer 22 and the first metal layer 33 is connected with the electrical network of the power conversion device 100, in addition to achieving good electromagnetic shielding effect, the third metal layer 22 and the first metal layer 33 can also strengthen the current-carrying capacity, effectively reduce the line loss, and improve the transmission efficiency and stability of electric energy.

[0086] Wherein, the first conductive body 7 can be any structure capable of conducting electricity, for example, the first conductive body 7 can be a metal column, and a part of the first conductive body 7 is located in the accommodating groove 21; for another example, the first conductive body 7 can also include the metal part of the conductive hole on the first circuit board 2. Since the first conductive body 7 is located outside the power device 5 and the first conductive body 7 is metal, the anti-interference ability of the power device 5 on the side can also be improved through the first conductive body 7, further improving the EMC performance of the power device 5.

[0087] In some embodiments, the EMC performance of the power device 5 can be improved by increasing the number of first conductive bodies 7. For example, referring to Figure 10Multiple first conductors 7 can be provided, with multiple first conductors 7 surrounding the outer periphery of the power device 5. The power device 5 is wrapped by the third metal layer 22, the first metal layer 33 and the multiple first conductors 7 connecting the two. In this way, the power device 5 has a shielding structure on both sides and the outer periphery, achieving a good electromagnetic shielding effect and further optimizing the EMC performance of the power device 5.

[0088] Furthermore, when the power conversion device 100 includes a third metal layer 22, if multiple second conductors 8 are provided, the multiple second conductors 8 can surround the outer periphery of the third metal layer 22, for example, Figure 11 An exemplary structure of a second conductor 8 is shown, in Figure 11 In the example shown, a plurality of second conductors 8 surround the outer periphery of the third metal layer 22.

[0089] In some other embodiments, the third metal layer 22 can be exposed on the outside of the first circuit board 2, that is, the distance between the third metal layer 22 and the substrate 3 can be increased, so that the dimension of the receiving groove 21 in the thickness direction of the first circuit board 2 is larger. For example, Figure 12 An exemplary embodiment shows the structure of another first circuit board 2, with reference to Figure 12 In this embodiment, the third metal layer 22 is exposed on the side of the first circuit board 2 facing away from the substrate 3. The surface (B2) of the third metal layer 22 facing the substrate 3 can serve as the inner surface of the receiving groove 21, meaning the receiving groove 21 extends to the location of the third metal layer 22. In other embodiments, the receiving groove 21 does not extend to the location of the third metal layer 22 on the first circuit board 2; that is, there is a certain distance between the inner surface of the receiving groove 21 facing the substrate 3 and the third metal layer 22.

[0090] Among them, reference Figure 12 This makes the receiving groove 21 longer in the thickness direction of the first circuit board 2, resulting in a larger internal space and thus improving the receiving groove 21's capacity. For example, a larger receiving groove 21 can accommodate a larger power device 5, reducing the possibility of interference between the inner surface of the receiving groove 21 and the installation of the power device 5; furthermore, a larger receiving groove 21 can accommodate more thermally conductive material (e.g., thermally conductive adhesive), thereby further improving the heat dissipation capacity of the power device 5.

[0091] In addition, Figure 12 In the illustrated embodiment, the power conversion device 100 may also include a plurality of first conductors 7, through which the third metal layer 22 and the first metal layer 33 are electrically connected to the first circuit board 2. Figure 12The first conductor 7 is intended to indicate that, in the case where the power conversion device 100 includes the first conductor 7, the first conductor 7 may be partially located within the receiving groove 21. Figure 12 The first conductor 7 on the right side can be a metal pillar; alternatively, the first conductor 7 can also be entirely located outside the receiving groove 21. Figure 12 The first conductor 7 on the left side of the circuit board 2 can be a metal pillar that passes through the first metal layer 33, or it can include the metal portion of the conductive hole on the first circuit board 2.

[0092] In some other embodiments, the third metal layer 22 may also be located in other suitable locations, for example, Figure 13 An exemplary embodiment shows the structure of another first circuit board 2, with reference to Figure 13 The third metal layer 22 is located within the first circuit board 2, and is situated between the surface of the first circuit board 2 facing away from the substrate 3 and the surface of the receiving groove 21 facing the substrate 3. This design ensures that the third metal layer 22 is neither exposed outside the first circuit board 2 nor exposed within the receiving groove 21. For example, by using a portion of any intermediate trace layer of the first circuit board 2 (a multilayer circuit board) as the third metal layer 22, an additional metal shielding structure is unnecessary in the first circuit board 2, reducing processing steps and facilitating the manufacturing of the first circuit board 2. Furthermore, the portion of the first circuit board 2 facing away from the substrate 3 that is opposite to the power device 5 (…) Figure 13 The area within the dashed box can be arbitrarily configured as needed (e.g., pads, trace layers, terminals, etc.), reducing the impact of setting the third metal layer 22 on the surface layout of the first circuit board 2 and improving the flexibility of the surface layout of the first circuit board 2.

[0093] exist Figure 13 In the illustrated embodiment, the power conversion device 100 can also electrically connect the third metal layer 22 of the first circuit board 2 to the first metal layer 33 of the substrate 3 via the first conductor 7. Wherein, Figure 13 The first conductor 7 is entirely located outside the receiving groove 21. This first conductor 7 can be a metal pillar or include the metal portion of a conductive hole on the first circuit board 2. In some other embodiments, the first conductor 7 may be partially located inside the receiving groove 21.

[0094] Furthermore, in some embodiments, other electronic components may be disposed within the receiving slot 21, for example, Figure 14 An exemplary embodiment shows the structure of another first circuit board 2, with reference to Figure 14 The power conversion device 100 also includes an auxiliary device 9, which encapsulates at least one of a drive circuit, a protection circuit, and an absorption circuit.

[0095] The driving circuit is used to amplify the signal of the control circuit, so that it can drive the power device 5; the protection circuit is used to cope with some unstable factors, so as to prevent the unstable factors from affecting the circuit effect, for example, the protection circuit is used to detect the current input or output of the power device 5, and in the case that the current input or output of the power device 5 is large, the switch tube in the power device 5 is turned off (for example, the switch tube in the power device 5 is turned off by the driving circuit); the absorption circuit (buffer circuit) can reduce the voltage spike and current impact generated by the power device 5 in the switching process, so as to limit the voltage (clamping voltage) between the first pole and the second pole of the power device 5, thereby protecting the sensitive elements in the circuit from being damaged, for example, the absorption circuit can be an RCD circuit (a circuit composed of a resistor Rs, a capacitor Cs and a diode VDs), and for another example, the absorption circuit can also be an RC circuit (composed of a resistor and a capacitor).

[0096] It should be noted that the power device 5 can be an insulated gate bipolar transistor (IGBT), and the power device 5 can also be a metal-oxide semiconductor field effect transistor (MOSFET). Each power device 5 includes a control pole, a first pole and a second pole, for example, in the case that the power device 5 is an insulated gate bipolar transistor (IGBT), the first pole of the power device 5 is the collector pole (C pole), the second pole of the power device 5 is the emitter pole (E pole), and the control pole of the power device 5 is the base pole (B pole); for another example, in the case that the power device 5 is a metal-oxide semiconductor field effect transistor (MOSFET), the first pole of the power device 5 is the drain pole (D pole), the second pole of the power device 5 is the source pole (S pole), and the control pole of the power device 5 is the gate pole (G pole). In addition, in the case that the auxiliary device 9 is packaged with the absorption circuit, the absorption circuit can also clamp the voltage between the source pole and the gate pole of the power device 5.

[0097] In order to provide installation for the auxiliary device 9, inside the accommodation groove 21 of the first metal layer 33, a wiring layer for fixing (for example, welding) the auxiliary device 9 can also be arranged, for example, referring to Figure 14 The first circuit board 2 further includes a second wiring layer 23, the second wiring layer 23 is fixed to the inner surface of the accommodation groove 21 towards the substrate 3, the second wiring layer 23 is electrically connected with the first wiring layer 31, and the auxiliary device 9 is fixed to the second wiring layer 23. The accommodation groove 21 can not only accommodate the power device 5, but also fix the auxiliary device 9 related to the power device 5, so as to realize the laminated design of the limited space and improve the utilization rate of the accommodation groove 21 and the density of the devices on the first circuit board 2. In addition, the loop length of the periphery of the power device 5 can also be reduced, so as to achieve the effect of reducing the parasitic inductance and improve the performance of the power device 5.

[0098] The electrical connection between the second wiring layer 23 and the first wiring layer 31 can be achieved in any suitable manner. For example, the second wiring layer 23 and the first wiring layer 31 can be connected by a third conductor (e.g., a metal pillar) disposed between them.

[0099] In some embodiments, the receiving groove 21 may also be filled with potting compound 211, and the potting compound 211 may be connected to the substrate 3. Figure 15 An exemplary structure of potting compound 211 is shown, with reference to Figure 15 Filling the receiving groove 21 with potting compound 211 can enhance the insulation of the power device 5. After sealing with potting compound 211, the electrical safety distance can be reduced, allowing for a higher density design inside the receiving groove 21. Furthermore, it can improve the thermal conductivity of the receiving groove 21, enabling the heat from the power device 5 to be quickly transferred outwards through the potting compound 211. For example, the heat from the power device 5 can be transferred to the substrate 3 through the potting compound 211, and then to the heat sink 4 (if the power conversion device 100 includes a heat sink 4), achieving efficient heat dissipation for the power device 5. In addition, the potting compound 211 also serves a waterproof function. The power device 5 encased in the potting compound 211 has stronger reliability and environmental adaptability, improving the operational stability of the power conversion device 100.

[0100] When it is necessary to fill the receiving groove 21 with glue, the glue can be filled by opening a glue-filling hole 25 on the first circuit board 2 or the substrate 3, thus reducing the difficulty of filling the receiving groove 21 with glue. For example, Figure 16 (a) in the figure exemplarily illustrates the structure of a potting hole 25, with reference to Figure 16 In (a), the potting hole 25 is located on the first circuit board 2, and one end of the potting hole 25 faces the side of the first circuit board 2 away from the substrate 3 (substrate 3 auxiliary reference). Figure 15 The other end of the glue-filling hole 25 is connected to the receiving groove 21 (receiving groove 21 auxiliary reference). Figure 15 The circuit board 2 is connected to the receiving groove 21, and potting compound 211 can be poured into the receiving groove 21 through the potting hole 25. In the case where the first circuit board 2 includes a third metal layer 22, Figure 16 (a) in Figure 15 Taking the third metal layer 22 as an example, the potting hole 25 also passes through the third metal layer 22.

[0101] For example, Figure 16 (b) illustrates an alternative structure for the potting hole 25, referring to Figure 16 In (b), the potting hole 25 is located on the substrate 3, and one end of the potting hole 25 faces the heat sink 4 (heat sink 4 auxiliary reference). Figure 15 The other end of the glue-filling hole 25 is connected to the receiving groove 21 (receiving groove 21 auxiliary reference).Figure 15 )communicate, through the glue hole 25 on the substrate 3 side, the potting glue 211 can also be poured into the accommodation groove 21.

[0102] In the case of the power conversion device 100 further comprising the second circuit board 6 (for example, Figure 6 The case shown), the first circuit board 2 can be fixed on the second circuit board 6 in a vertical installation manner. Among them, the surface of the first circuit board 2 is perpendicular to the surface of the second circuit board 6, which may cause the substrate 3 on the first circuit board 2 to be closer to the second circuit board 6, or the substrate 3 to be closer to the pin of the first circuit board 2.

[0103] Therefore, in some embodiments, the surface of the first circuit board 2 can also include an insulating area 27, Figure 17 The structure of an insulating area 27 provided for the embodiments of the present application, with reference to Figure 17 The insulating area 27 is located on the surface of the first circuit board 2 facing the substrate 3, and the insulating area 27 is at least partially located between the substrate 3 and the second circuit board 6. For example, the insulating area 27 surrounds the outer periphery of the substrate 3; for another example, the insulating area 27 is in a straight strip shape, and the insulating area 27 is located between the substrate 3 and the second circuit board 6 as a whole.

[0104] The insulating area 27 arranged between the substrate 3 and the second circuit board 6 can reduce the possibility of conduction between the substrate 3 and the second circuit board 6, for example, when the first metal layer 33 is connected to the electrical network of the power conversion device 100, the possibility of arc generation between the substrate 3 and the second circuit board 6 is reduced. In addition, the possibility of arc generation between the substrate 3 and the pin 26 (for connecting the second circuit board 6) of the first circuit board 2 is also reduced, meeting the safety requirements. In the embodiment in which the insulating area 27 surrounds the outer periphery of the substrate 3, the insulating area 27 also reduces the risk of conduction between the substrate 3 and the first circuit board 2.

[0105] In the case of the power conversion device 100 comprising the insulating area 27, the width of the insulating area 27 can also be set according to the needs, for example, the width of the insulating area 27 is between 0-10mm. Among them, in the embodiment shown, Figure 17 L1, L2, L3 and L4 in Figure 17 The L1, L2, L3 and L4 are the width of the insulating area 27, the size of L1, L2, L3 and L4 can be the same or different, which is not limited in the present application. In Figure 17In the illustrated embodiment, if the width of the insulating region 27 is between 0 and 10 mm, then the dimensions of L1, L2, L3, and L4 are each between 0 and 10 mm. For example, L1 can have a dimension of 3 mm, 5 mm, 6 mm, or 9 mm, etc.; L2 can have a dimension of 2 mm, 7 mm, 8 mm, or 10 mm, etc.; L3 can have a dimension of 1 mm, 4 mm, 6 mm, or 8.5 mm, etc.; and L4 can have a dimension of 0.5 mm, 4 mm, 5 mm, or 9.5 mm, etc.

[0106] The above description is merely that of the specific embodiments of the present application, but the present application is not limited thereto. Any changes or modifications made by those skilled in the art within the technical scope of the present application should be encompassed within the scope of the present application. Therefore, the scope of the present application should be defined by the appended claims rather than by the detailed description.

Claims

1. A power conversion device for converting input electrical energy into power and then outputting it, characterized in that, The power conversion device comprises: a device shell; a first circuit board fixed in the device shell, the first circuit board comprising a receiving groove, an opening of the receiving groove being located on one surface of the first circuit board; a substrate fixed in the device shell, the substrate being located on one side of the first circuit board and shielding the receiving groove, the substrate comprising a first trace layer, a first insulating layer and a first metal layer, the first insulating layer being fixed between the first trace layer and the first metal layer, the first trace layer facing the receiving groove, the first trace layer being electrically connected with the first circuit board; a power device fixed on the first trace layer and at least partially located in the receiving groove.

2. The power conversion device of claim 1, wherein, The first circuit board further comprises a third metal layer, the power device being located between the third metal layer and the first metal layer.

3. The power conversion device of claim 2, wherein, The power device is located inside an outer edge of a surface of the third metal layer.

4. The power conversion device according to claim 2 or 3, characterized by The third metal layer is exposed on a side of the first circuit board away from the substrate.

5. The power conversion device according to claim 2 or 3, characterized by The third metal layer is fixed on an inner surface of the receiving groove facing the substrate.

6. The power conversion device according to claim 2 or 3, characterized by The third metal layer is located between a surface of the first circuit board away from the substrate and a surface of the receiving groove facing the substrate.

7. The power conversion device of claim 6, wherein, The power conversion device further comprises an auxiliary device, the auxiliary device being packaged with at least one of a driving circuit, a protection circuit and an absorption circuit, the driving circuit being used to drive the power device, the protection circuit being used to detect a current input to or output from the power device, the absorption circuit being used to clamp a voltage between a first pole and a second pole of the power device; The first circuit board further comprises a second trace layer, the second trace layer being fixed on an inner surface of the receiving groove facing the substrate, the second trace layer being electrically connected with the first trace layer, the auxiliary device being fixed on the second trace layer.

8. The power conversion device of claim 2, wherein, The power conversion device further comprises at least one first conductive body, a part of each of the first conductive bodies being located in the first circuit board, one end of each of the first conductive bodies protruding from the first circuit board towards a surface of the substrate and being connected with the first metal layer, the other end of each of the first conductive bodies being connected with the third metal layer.

9. The power conversion device of claim 8, wherein, The first conductive bodies are provided in a plurality, the plurality of first conductive bodies being arranged around an outer periphery of the power device.

10. The power conversion device of any one of claims 1-3, wherein, The power conversion device further comprises a second conductive body, a part of the second conductive body being located in the first circuit board, the first circuit board further comprising a third trace layer arranged away from the substrate, one end of the second conductive body protruding from the first circuit board towards a surface of the substrate and being connected with the first trace layer, the other end of the second conductive body being connected with the third trace layer.

11. The power conversion device of any one of claims 1-3, wherein, The power conversion device further comprises a heat sink, the heat sink being located in the device shell or partially protruding out of the device shell, the heat sink being located on a side of the substrate away from the first circuit board and being fixed on the substrate.

12. The power conversion device of claim 11, wherein, The substrate further comprises a second insulating layer and a second metal layer, the second insulating layer is fixed between the first metal layer and the second metal layer, and the heat sink is fixedly connected with the second metal layer.

13. The power conversion device of any one of claims 1-3, wherein, The accommodating groove is filled with potting glue, and the potting glue is connected with the substrate.

14. The power conversion device of any one of claims 1-3, wherein, The power conversion device further comprises a second circuit board fixed in the device shell, the first circuit board is fixed on the second circuit board, the surface of the first circuit board is perpendicular to the surface of the second circuit board, the surface of the first circuit board towards the substrate comprises an insulating area, and the insulating area is at least partially located between the substrate and the second circuit board.

15. A power cabinet characterized in that, The cabinet comprises a cabinet body and a plurality of power conversion devices according to any one of claims 1-14, the plurality of power conversion devices are located in the cabinet body, and the plurality of power conversion devices are connected in parallel.

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