Power module, driving chip and electronic equipment
By flip-chip integrating MOSFET and diode chips on the lead frame and using plastic encapsulation, the problems of excessive size and complex packaging in shell-encapsulated modules are solved, achieving high-density packaging and simplified process.
Patent Information
- Application Number
- CN202423033084.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-09
- Publication Date
- 2026-01-09
- Estimated Expiration
- 2034-12-09
AI Technical Summary
Existing power semiconductor device packaging suffers from problems such as excessively large power volume, long current loops, large loop inductance, and low package power density.
The flip-chip process integrates the MOSFET chip and the diode chip on the same lead frame and uses plastic encapsulation to reduce commutation path, reduce parasitic inductance and increase package density.
This technology achieves small power module size, fewer commutation circuits, low loop inductance, high package power density, and simple packaging process, solving the problems of resource waste and cumbersome packaging in shell-encapsulated modules.
Smart Images
Figure CN223786405U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The utility model relates to a semiconductor technical field especially relates to a power module, drive chip and electronic equipment. BACKGROUND
[0002] Power semiconductor devices and supporting auxiliary elements are assembled on a metal substrate in an insulating manner according to a typical power electronic circuit topology, integrated into a module, and a power semiconductor module (Power Module) package is formed. For example, in the half-bridge and full-bridge topology used for energy storage. Most of the modules with medium and high power adopt traditional shell sealing process instead of plastic sealing process. Shell sealing process refers to dispersing chips with different functions on the surface of DBC, connecting the chips and terminals or pins also welded on DBC through connecting lines, and then protecting them with a shell and silicone gel to form a complete current loop, so that the chip can control the current in the overall circuit. However, in the shell sealing process, the chips are mostly arranged in a planar structure, which makes the overall power module have a long current loop, resulting in excessive stray inductance and line resistance of the power module, which limits the packaging power density.
[0003] It can be seen that the packaging of the power semiconductor device has the problems of large power volume, long current loop, large loop inductance, and low packaging power density. SUMMARY
[0004] According to one aspect of the utility model, a power module is provided, the power module includes a lead frame, at least one MOS tube chip, and at least one diode chip, the MOS tube chip and the diode chip are directly connected to the lead frame,
[0005] The anode of the diode chip is fixedly connected to the lead frame through one or more metal protruding structures, and the cathode of the diode chip is connected to the MOS tube chip through a bonding wire.
[0006] In one possible implementation, the lead frame includes at least a first pin, a second pin, a third pin, and a fourth pin, and the connection relationship between the MOS tube chip and the diode chip and the lead frame includes at least one of the following:
[0007] The gate of the MOS tube chip is connected to the first pin through a bonding wire,
[0008] The drain of the MOS tube chip is connected to the lead frame,
[0009] The Kelvin source of the MOS tube chip is connected to the second pin through a bonding wire,
[0010] The source of the MOS tube chip is connected with the third pin through a bonding wire,
[0011] The cathode of the diode chip is connected with the fourth pin through a bonding wire.
[0012] In a possible implementation, the power module further comprises a copper clad ceramic substrate DBC, wherein,
[0013] The MOS tube chip is welded on the DBC substrate, and the DBC substrate is connected with the lead frame through solder,
[0014] The anode of the diode chip is welded with the DBC substrate through a metal bump structure,
[0015] The drain of the MOS tube chip is welded on the DBC substrate, the DBC substrate is welded with the lead frame, and the DBC substrate is connected with the lead frame through a bonding wire.
[0016] In a possible implementation, the MOS tube chip is welded on the lead frame, wherein the drain of the MOS tube chip is welded on the lead frame.
[0017] In a possible implementation, the power module is packaged in a plastic package, and the power module further comprises a package body for wrapping the lead frame, at least one MOS tube chip and at least one diode chip, wherein the pins of the lead frame are exposed outside through the package body.
[0018] In a possible implementation, the power module further comprises a heat sink arranged on the back of the lead frame, for dissipating heat of the power module and providing mechanical support.
[0019] In a possible implementation, the diode chip comprises a Schottky barrier diode SBD or a Si diode, and the MOS tube chip comprises any one of a SiC MOS tube chip, a Si MOS tube chip, an IGBT tube chip, a GaN MOS tube chip or a GaAs MOS tube chip.
[0020] In a possible implementation, the arrangement of the at least one MOS tube chip comprises a planar arrangement or a three-dimensional stacked arrangement.
[0021] According to an aspect of the present application, a driving chip is provided, which comprises the power module.
[0022] According to an aspect of the present application, an electronic device is provided, which comprises the driving chip.
[0023] The power module of the embodiment of the utility model solves the problem of waste of packaging resources caused by too large power volume and too small proportion in the shell packaging module by packaging the chip in the product with small size, adopts the MOS and the diode integrated on the same lead frame by using the flip technology to solve the problem of large loop inductance and complicated packaging process caused by packaging the MOS and the diode in the separated lead frame in the topology.
[0024] It should be understood that the above general description and the following detailed description are only exemplary and explanatory, but not limiting the utility model. According to the detailed description of the exemplary embodiments below with reference to the accompanying drawings, other features and aspects of the utility model will become clear. BRIEF DESCRIPTION OF DRAWINGS
[0025] The drawings incorporated into the specification and forming a part of the specification, these drawings show embodiments consistent with the utility model, and together with the specification, are used to illustrate the technical scheme of the utility model.
[0026] Figure 1 A schematic diagram of a power module in the related art is shown.
[0027] Figure 2a A schematic diagram of a power module according to an embodiment of the utility model is shown.
[0028] Figure 2b A schematic diagram of a power module according to an embodiment of the utility model is shown.
[0029] Figure 3 A schematic diagram of a power module including a DBC substrate according to an embodiment of the utility model is shown.
[0030] Figure 4 A schematic diagram of a power module not including a DBC substrate according to an embodiment of the utility model is shown.
[0031] Figure 5 A schematic diagram of a circuit topology according to an embodiment of the utility model is shown. DETAILED DESCRIPTION
[0032] Various exemplary embodiments, features and aspects of the utility model will be described in detail below with reference to the drawings. The same reference signs in the drawings represent functionally identical or similar elements. Although various aspects of the embodiments are shown in the drawings, the drawings are not necessarily drawn to scale unless specifically indicated.
[0033] In the description of the utility model, it is understood that the terms "length", "width", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer" and the like indicate the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the utility model and simplifying the description, and therefore cannot be understood as indicating or implying that the devices or elements referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the utility model.
[0034] In addition, the terms "first", "second" are only for the purpose of description, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first", "second" can explicitly or implicitly include one or more of the features. In the description of the utility model, the meaning of "multiple" is two or more, unless otherwise specifically limited.
[0035] In the utility model, unless otherwise specifically defined and limited, the terms "mounting", "connection", "connection", "fixing" and the like should be understood broadly, for example, it can be fixed connection, or detachable connection, or integrated; it can be mechanical connection, or electrical connection; it can be directly connected, or indirectly connected through intermediate medium, or the communication or interaction relationship between two elements. For ordinary skilled persons in the art, the specific meaning of the above terms in the utility model can be understood according to the specific circumstances.
[0036] The special word "exemplary" here means "as an example, embodiment or illustrative". Any embodiment described as "exemplary" here is not necessarily interpreted as superior or better than other embodiments.
[0037] The term "and / or" in this paper is only a description of the association relationship of the associated object, which means that there can be three kinds of relationships, for example, A and / or B, which can mean that A exists alone, A and B exist together, and B exists alone. In addition, the term "at least one" in this paper means any one of the plurality or any combination of at least two of the plurality, for example, including at least one of A, B and C, which can mean including any one or more elements selected from the set consisting of A, B and C.
[0038] In addition, in order to better illustrate the utility model, a large number of specific details are given in the specific embodiments below. Those skilled in the art should understand that the utility model can also be implemented without certain specific details. In some examples, methods, means, elements and circuits familiar to those skilled in the art are not described in detail, in order to highlight the main idea of the utility model.
[0039] Referring to Figure 1 , Figure 1 A schematic diagram of a power module in the related art is shown.
[0040] Generally speaking, the shell-seal package of the power module in the related art includes: chips (including transistors, diodes) as power electronic devices, DBC (copper-clad ceramic substrate, referred to as "DBC substrate", including an upper copper layer, a ceramic layer and a lower copper layer), bonding wires, terminals and solders as electrical connections; wherein the DBC, the shell and the silicone gel serve as electrical insulation; the DBC and the substrate serve as mechanical support, and the shell and the silicone gel also serve as mechanical protection and mechanical sealing.
[0041] As Figure 1 shown, for the Boost topology structure, the shell-seal package of the prior art adopts a bonding wire to connect the DBC where the diode and the MOS tube are located to realize commutation, wherein the process of current transfer from one branch to another branch is called commutation, and the on-off control of the power semiconductor module is realized through commutation to realize the forward and reverse flow of current. The commutation circuit in the power module is mainly used to control the conduction and turn-off process of IGBT and SiC to realize the forward and reverse flow of current.
[0042] Among them, the DBC and the substrate of the shell-seal power module are relatively large in size, and are suitable for packaging of multi-chip products. For the Boost topology and the Buck topology, the currently adopted power module is shell-seal, such as flow0 and Easy3B module, which has the disadvantages of high packaging process requirement, high packaging cost and complicated installation, and the system inductance cannot be optimized, and the power semiconductor module of the conversion circuit is large in size and high in space occupancy, which reduces the installation convenience and portability.
[0043] In view of the above defects of the current shell-seal power module, the power circuit topology (such as boost and Buck topology) is integrated into a plastic-seal (English full name: Plastic Leaded Chip Carrier, referred to as PLCC) module which is small in size, has obvious inductance advantage and is easy to install, and flip-chip packaging process is adopted to facilitate the packaging and integration of multi-chip on the frame.
[0044] Referring to Figure 2a , Figure 2a A schematic diagram of a power module according to an embodiment of the utility model is shown.
[0045] As Figure 2aAs shown, the power module comprises a lead frame 10, at least one MOS tube chip 20, at least one diode chip 30, the MOS tube chip 20 and the diode chip 30 are directly connected to the lead frame 10,
[0046] Wherein, the anode of the diode chip 30 is fixedly connected to the lead frame 10 through one or more metal bump structures, and the cathode of the diode chip 30 is connected to the MOS tube chip 20 through a bonding wire.
[0047] The power module of the embodiment of the utility model solves the problem of waste of packaging resources caused by too large volume and too small proportion of topology in shell packaging module by packaging the chip in a small size product, and solves the problems of large loop inductance and complicated packaging process caused by packaging MOS and diode in separate lead frames 10 by integrating MOS and flip-chip diode on the same lead frame 10, and accordingly, compared with the related art, the power module of the embodiment of the utility model has the advantages of small volume, few commutation circuits, small loop inductance, high packaging power density and simple packaging process.
[0048] Wherein, the aforementioned topology comprises at least one MOS tube chip 20 and at least one diode chip 30.
[0049] The number of MOS tube chips 20 and the number of diode chips 30 are not limited, the circuit topology formed by each MOS tube chip 20 and diode chip 30 is not limited, and the specific type of MOS tube chip 20 and diode chip 30 is not limited, which can be set according to actual conditions and needs by those skilled in the art. Exemplarily, the number of MOS tube chips 20 and the number of diode chips 30 can both be one, or the number of MOS tube chips 20 and the number of diode chips 30 can also include multiple, wherein the multiple chips can be electrically connected through a parallel connection or other connection mode, and then electrically connected with the metal lead frame 10; the arrangement of the multiple chips on the lead frame 10 can be planar arrangement or three-dimensional stacking, which is not limited by the embodiment of the utility model.
[0050] Exemplarily, the circuit topology formed by each MOS tube chip 20 and diode chip 30 can include boost and Buck topology or other topology, the diode chip 30 can include Schottky barrier diode SBD and Si diode, and the MOS tube chip 20 can include any one of SiC MOS tube chip, Si MOS tube chip, IGBT tube chip, GaN MOS tube chip and GaAs MOS tube chip.
[0051] The embodiment of the utility model does not limit the specific implementation mode of the lead frame 10, and the lead frame 10 is mainly composed of two parts: a chip pad (die paddle) and a lead finger (lead finger). The lead frame 10 can be used as a chip carrier of an integrated circuit, and is a key structural component for forming an electrical circuit by means of a bonding material (gold wire, aluminum wire, copper wire) to electrically connect the internal circuit lead-out end (bonding point) of the chip with the internal lead and the external lead, which plays a role of a bridge for connecting with external wires. Among them, the MOS tube chip 20 and the diode chip 30 can be welded on the chip pad.
[0052] The embodiment of the utility model does not limit the number of metal bumps and the specific implementation process, and the skilled person in the art can set it according to the actual situation and needs, and realize it by adopting the process in the related technology. Among them, the bump connection is a technology for connecting the chip with other electronic components through small metal bumps, and these metal bumps are usually made of metal, such as copper, tin or lead-tin alloy, for electrical connection and mechanical fixation.
[0053] The embodiment of the utility model realizes the flip-chip setting of the diode chip 30 by fixing the anode of the diode chip 30 to the lead frame 10 through one or more metal bumps and connecting the cathode of the diode chip 30 to the MOS tube chip 20 through a bonding wire. In this way, the flip-chip diode chip 30 is integrated with the MOS tube chip 20 on the same lead frame 10, which can solve the problem of large loop inductance and complex packaging process caused by packaging the MOS tube chip 20 and the diode chip 30 in separate lead frames 10 in the topology.
[0054] It should be noted that the front of a conventional diode is the anode, which is connected with the bonding wire, and the surface welded with the solder is the cathode, and vice versa for the flip-chip diode chip 30 (the anode of the diode chip 30 is fixedly connected to the lead frame 10 through one or more metal bumps, and the cathode of the diode chip 30 is connected to the MOS tube chip 20 through a bonding wire), and the current of the flip-chip diode chip 30 flows from the anode to the cathode.
[0055] The embodiment of the utility model does not limit the specific process for realizing flip-chip, and the skilled person in the art can realize it by adopting the related technology according to the actual situation and needs, and the flip-chip operation of the diode can be realized by adopting C4 (Controlled Collapse Chip Connection), DCA (Direct Chip Attach) and FCAA (Flip Chip Adhesive Attachment) to integrate with the MOS in the same frame.
[0056] The bonding wire is a connecting wire realized by a bonding process, and the embodiment of the utility model does not limit the specific thickness and number of the bonding wire, and the person skilled in the art can set according to the actual situation and needs.
[0057] It should be understood that the MOS tube chip 20 and the diode chip 30 directly connected to the lead frame 10 in the embodiment of the utility model can include various implementation manners, and the embodiment of the utility model does not limit this, for example, the MOS tube chip 20 can be directly arranged in the lead frame 10, or the MOS tube chip 20 is arranged on the DBC substrate, the DBC substrate is directly connected to the lead frame 10, or other manners, of course, in various ways, the diode chip 30 is arranged on the lead frame 10 in a flip-chip manner. The above various ways can be regarded as "the MOS tube chip 20 and the diode chip 30 are directly connected to the lead frame 10", or the MOS tube chip 20 and the diode chip 30 are integrated in the same lead frame 10. The embodiment of the utility model realizes the series connection of the frame and the chip by flip-chip, reduces the commutation path, greatly reduces the parasitic inductance caused by the bonding wire, so that the integration of the power module can be further improved.
[0058] In a possible implementation manner, the power module is packaged by a plastic package manner, and the power module further includes a packaging body, the packaging body is used for wrapping the lead frame 10, at least one MOS tube chip 20 and at least one diode chip 30, wherein the pins of the lead frame 10 are exposed outside through the packaging body.
[0059] Please refer to Figure 2b , Figure 2b A schematic view of the power module according to the embodiment of the utility model is shown.
[0060] As Figure 2b shown, the MOS tube chip 20 and the diode chip 30 are integrated in the same lead frame 10, and the lead frame 10 further includes a plurality of frame pins.
[0061] The embodiment of the utility model integrates the MOS tube chip 20 and the flip-chip diode on the same frame, increases the power volume (the volume of the packaging body that can output effective power), and at the same time, the distance between the MOS tube chip 20 and the diode is only limited by the process capability of the bonding process. The traditional Boost topology circuit is as follows Figure 1As shown, the current flows from the DBC of the MOS tube chip 20 to the diode through the bonding wire to realize the commutation, and the MOS tube chip 20 and the inverted diode are integrated on the same frame in the embodiment of the utility model, the current can directly flow out of the diode without the bonding wire, thereby reducing the parasitic inductance caused by the bonding wire and the commutation time.
[0062] The embodiment of the utility model does not limit the specific number of frame pins of the lead frame 10, and the person skilled in the art can set according to the actual situation and needs.
[0063] Please refer to Figure 3 , Figure 3 The schematic diagram of the power module including the DBC substrate according to the embodiment of the utility model is shown.
[0064] Please refer to Figure 4 , Figure 4 The schematic diagram of the power module not including the DBC substrate according to the embodiment of the utility model is shown.
[0065] In a possible implementation, as shown in Figure 3 , Figure 4 The lead frame 10 at least includes a first pin 110, a second pin 120, a third pin 130 and a fourth pin 140, wherein the connection relationship between the MOS tube chip 20 and the diode chip 30 and the lead frame 10 includes at least one of the following:
[0066] The gate of the MOS tube chip 20 is connected with the first pin 110 through the bonding wire,
[0067] The drain of the MOS tube chip 20 is connected with the lead frame 10,
[0068] The Kelvin source of the MOS tube chip 20 is connected with the second pin 120 through the bonding wire,
[0069] The source of the MOS tube chip 20 is connected with the third pin 130 through the bonding wire,
[0070] The cathode of the diode chip 30 is connected with the fourth pin 140 through the bonding wire.
[0071] In a possible implementation, as shown in Figure 3 The power module can further include a copper-clad ceramic substrate DBC 40, wherein,
[0072] The MOS tube chip 20 is welded on the DBC substrate 40, and the DBC substrate 40 is connected with the lead frame 10 through the solder,
[0073] The anode of the diode chip 30 is soldered to the DBC substrate 40 through a metal bump structure.
[0074] The drain of the MOS transistor chip 20 is soldered onto the DBC substrate 40, the DBC substrate 40 is soldered to the lead frame 10, and the DBC substrate 40 and the lead frame 10 are connected by bonding wires.
[0075] A specific implementation example Figure 3 As shown, Figure 3 The diagram illustrates the internal structure of a packaged device before molding, including a lead frame 10, a DBC and MOSFET chip 20 on top, a diode chip 30, bonding wires between the chip and the pins, and the chip between the DBC and the pins. The first pin 110 is connected to the gate electrode via bonding wires. The drain electrode on the back of the lead frame 10 and the MOSFET chip 20 is bonded to the DBC and then connected to the frame via bonding wires. The Kelvin source electrode on the front of the chip is connected to the second pin 120 via bonding wires. The source electrode on the front of the chip is connected to the third pin 130 via bonding wires. The cathode of the diode chip 30 is connected to the fourth pin 140 (out) via bonding wires.
[0076] For example, Figure 3 The specific device manufacturing process steps for the power module shown may include:
[0077] (1) After the MOS transistor chip 20 is soldered to the designated position of the DBC, it is connected to the lead frame 10 by solder. The diode is soldered to the DBC by the flip-chip process.
[0078] (2) The aluminum wire ultrasonic bonding process is used between the chip and the pin, and the electrical connection between the chip and the pin of the metal lead frame 10 material is realized through the bonding wire, wherein a plurality of bonding wires are connected between the source of the MOS chip 20 surface and the third pin 130, one bonding wire is connected between the first pin 110 and the gate, one bonding wire is connected between the second pin 120 and the Kelvin source, and at least one bonding wire is connected between the cathode of the diode chip 30 surface and the fourth pin 140. In addition, the DBC and the MOS chip Drain are connected through the bonding wire and the lead frame Drain, realizing the connection of the entire Boost circuit. Among them, according to the application requirement, the number of bonding wires is designed according to the process capacity, generally the gate and the Kelvin source are used for signal, and a small current can be used for one bonding wire, and the thickness can be adjusted according to the requirement, and the number of wires in other places including the source, the diode and the frame, the DBC and the like can be designed according to the wire capacity. In addition, the DBC and the MOS chip Drain are connected through the bonding wire and the lead frame Drain, realizing the connection of the entire circuit.(3) After the bonding is completed, the internal chip and the bonding wire are encapsulated by the molding process through the molding material.
[0079] (4) After the molding is completed, the unnecessary connection part of the lead frame 10 is cut off, and the independent packaging device is formed.
[0080] The above describes the scheme with the DBC substrate 40, but the embodiment of the utility model is not limited to this, and the power module can also not have the DBC substrate 40, for example, in a possible implementation manner, as shown in Figure 4 The MOS chip 20 is welded on the lead frame 10, wherein the drain of the MOS chip is welded on the lead frame.
[0081] A specific embodiment is shown in Figure 4 Figure 4 The internal structure of the packaged device before plastic packaging is shown, including a lead frame 10, a MOS tube chip 20 above the lead frame 10, and a bonding wire between the MOS tube chip 20 and the pin, wherein the first pin 110 is connected with the gate electrode through the bonding wire, the lead frame 10 is connected with the back drain electrode of the MOS tube chip 20 and the frame, the Kelvin electrode on the front of the chip is connected with the second pin 120 through the bonding wire, the source electrode on the front is connected with the third pin 130 through the bonding wire, and the diode is connected with the fourth pin 140 (Out) through a plurality of bonding wires. The number of bonding wires is exemplary, and the number of pins is indefinite, and is generally set according to requirements and a circuit. The chip is designed according to application requirements, and the number is set according to process capacity. Generally, the gate electrode and the Kelvin electrode carry signals, and a small current can be carried by one bonding wire, and the thickness of the bonding wire can be adjusted according to requirements. Other places including the source electrode, the diode and the frame, and the DBC can be designed according to the wire bonding capacity to design the number of wires.
[0082] As shown in Figure 4 The device process steps of the power module can include:
[0083] (1) The MOS tube chip 20 is placed at a specified position of the lead frame 10 and connected with the lead frame 10 through solder, and the diode is connected with the frame through solder by means of a flip chip process.
[0084] (2) The aluminum wire ultrasonic bonding process is used between the chip and the pin to realize electrical connection between the chip and the metal lead frame 10 material pin through the bonding wire, wherein a plurality of bonding wires are connected between the source electrode on the surface of the MOS tube chip 20 and the third pin 130, one bonding wire is connected between the gate electrode and the first pin 110, one bonding wire is connected between the Kelvin electrode and the second pin 120, and at least one bonding wire is connected between the cathode on the surface of the diode chip 30 and the fourth pin 140.
[0085] (3) After the bonding is completed, the internal chip and the bonding wire are encapsulated by means of a molding process through a plastic packaging material.
[0086] (4) After the plastic packaging is completed, unnecessary connection parts of the lead frame 10 are cut off to form an independent packaged device.
[0087] Please refer to Figure 5 , Figure 5 A schematic diagram of a circuit topology according to an embodiment of the present application is shown.
[0088] As shown in Figure 3 and Figure 4 , the circuit topology in the power module can be as shown in Figure 5 .
[0089] In a possible implementation, the power module can further include:
[0090] A heat sink is arranged on the back of the lead frame to dissipate heat of the power module and provide mechanical support. Of course, the plastic-encapsulated power module further includes plastic encapsulation material as electrical insulation. The heat sink and the plastic encapsulation material can both provide mechanical support, and the plastic encapsulation material also provides mechanical protection and mechanical sealing.
[0091] The above description of the plastic-encapsulated power module is not restrictive. The specific process and specific materials used for plastic encapsulation can be implemented according to related technologies according to actual conditions and needs.
[0092] It can be seen that the power module of the embodiments of the present application can solve the following problems and achieve the corresponding effects:
[0093] (1) The plastic encapsulation of the chip in a small-size product solves the problem of waste of packaging resources caused by the large power volume and small proportion of Boost and Buck topology in the shell-encapsulated module.
[0094] (2) The integration of the MOS and the flip-chip diode on the same lead frame solves the problem of large loop inductance and complex packaging process caused by the packaging of the MOS and the diode in separate lead frames or different copper skins of the DBC in the Boost topology.
[0095] (3) The use of the plastic-encapsulated module instead of the shell-encapsulated module effectively solves the problem of complicated terminal installation.
[0096] According to an aspect of the present application, a driving chip is provided, which includes the power module.
[0097] According to an aspect of the present application, an electronic device is provided, which includes the driving chip.
[0098] The embodiments of the present application do not limit the specific type of electronic device, and the electronic device can include a terminal device, which can be a user equipment (UE), a mobile device, a user terminal, a terminal, a handheld device, a computing device, or a vehicle-mounted device, and the like. For example, the terminal device can be a mobile phone, a tablet computer, a notebook computer, a palm computer, a mobile internet device (MID), a wearable device, a virtual reality (VR) device, an augmented reality (AR) device, a wireless terminal in industrial control, a wireless terminal in self-driving, a wireless terminal in remote medical surgery, a wireless terminal in smart grid, a wireless terminal in transportation safety, a wireless terminal in smart city, a wireless terminal in smart home, a wireless terminal in Internet of Vehicles, and the like. For example, the server can be a local server or a cloud server.
[0099] The above has described the embodiments of the present application, and the above description is exemplary, not exhaustive, and is not limited to the disclosed embodiments. Many modifications and changes are obvious to those skilled in the art without departing from the scope and spirit of the described embodiments. The selection of terms used herein is intended to best explain the principles of the embodiments, practical applications, or improvements to the technology in the market, or to enable other ordinary skilled persons in the art to understand the disclosed embodiments.
Claims
1. A power module, characterized by The power module comprises a lead frame, at least one MOS tube chip, and at least one diode chip, the MOS tube chip and the diode chip are directly connected to the lead frame, wherein the anode of the diode chip is fixedly connected to the lead frame through one or more metal bump structures, and the cathode of the diode chip is connected to the MOS tube chip through a bonding wire.
2. The power module of claim 1, wherein, The lead frame comprises at least a first pin, a second pin, a third pin, and a fourth pin, wherein the connection relationship between the MOS tube chip and the diode chip and the lead frame comprises at least one of the following: the gate of the MOS tube chip is connected to the first pin through a bonding wire, the drain of the MOS tube chip is connected to the lead frame, the Kelvin source of the MOS tube chip is connected to the second pin through a bonding wire, the source of the MOS tube chip is connected to the third pin through a bonding wire, the cathode of the diode chip is connected to the fourth pin through a bonding wire.
3. The power module of claim 2, wherein, The power module further comprises a copper-clad ceramic substrate, wherein the MOS tube chip is welded on the copper-clad ceramic substrate, the copper-clad ceramic substrate is connected to the lead frame through solder, the anode of the diode chip is welded to the copper-clad ceramic substrate through a metal bump structure, the drain of the MOS tube chip is welded on the copper-clad ceramic substrate, the copper-clad ceramic substrate is welded to the lead frame, and the copper-clad ceramic substrate is connected to the lead frame through a bonding wire.
4. The power module of claim 2, wherein, The MOS tube chip is welded on the lead frame, wherein the drain of the MOS tube chip is welded on the lead frame.
5. The power module of claim 1, wherein, The power module is packaged by a plastic package, and the power module further comprises a package body for wrapping the lead frame, at least one MOS tube chip, and at least one diode chip, wherein the pins of the lead frame are exposed outside through the package body.
6. The power module of claim 1, wherein, The power module further comprises: a heat sink arranged on the back of the lead frame, for dissipating heat of the power module and providing mechanical support.
7. The power module of claim 1, wherein, The diode chip comprises a Schottky barrier diode (SBD) and a Si diode, and the MOS tube chip comprises any one of a SiC MOS tube chip, an IGBT tube chip, a Si MOS tube chip, a GaN MOS tube chip, and a GaAs MOS tube chip.
8. The power module of claim 1, wherein, The arrangement of the at least one MOS tube chip comprises a planar arrangement or a three-dimensional stacked arrangement.
9. A driving chip, characterized by, The driving chip comprises the power module according to any one of claims 1-8.
10. An electronic device, comprising: The electronic device comprises the driving chip according to claim 9.