Anti-deformation heat sink structure and semiconductor device with same

Abstract

The utility model provides an anti-deformation heat sink structure and a semiconductor device with the same. The anti-deformation heat sink structure comprises a base layer, a first heat conduction layer and a second heat conduction layer. Wherein the first heat conduction layer and the second heat conduction layer are respectively arranged on two corresponding side surfaces of the base layer; the first heat conduction layer and the second heat conduction layer are each provided with one or more through grooves, the first heat conduction layer and the second heat conduction layer are divided into a plurality of independent blocks through the through grooves, so that the stress balance degree of the heat sink structure is improved, and when elements connected with the heat conduction layers deform, the through grooves can be separated from the independent blocks. A release space is provided for stress accumulated in the heat sink structure, so that the stress can be redistributed at the edge of the through groove, and the possibility of deformation of the heat sink structure is reduced. Further, the utility model provides a semiconductor device with the same, the overall deformation resistance of the semiconductor device can be improved, and the service life of the semiconductor device can be prolonged.

Description

TECHNICAL FIELD

[0001] The utility model relates to the field of semiconductor, concretely relates to a heat sink structure of anti-deformation and semiconductor device with it. BACKGROUND

[0002] In the field of semiconductor technology, heat sink structure is a key structure applied to heat dissipation, which transmits heat from heat generating elements to outside through heat conduction, convection and radiation. Heat sink usually includes heat dissipation base body and one or more functional layers. The surface of external element connected with heat sink structure is not necessarily completely flat, and in actual application, external element may also be deformed by external pressure. Due to the difference in shape and material between element and heat sink structure, as well as the possible installation stress and thermal stress, stress will be generated inside heat sink structure, and when stress accumulates excessively, heat sink structure may be deformed such as bending. SUMMARY

[0003] The utility model provides a heat sink structure of anti-deformation and semiconductor device with it to solve at least one of the above technical problems in view of the above shortage in prior art.

[0004] In a first aspect, a heat sink structure of anti-deformation is provided, which includes base layer, first heat conduction layer and second heat conduction layer.

[0005] First heat conduction layer and second heat conduction layer are respectively arranged on the two opposite sides of base layer. One or more through slots are respectively arranged on first heat conduction layer and second heat conduction layer, and first heat conduction layer and second heat conduction layer are divided into multiple independent blocks through the through slots to improve the stress balance degree of heat sink structure.

[0006] In a specific embodiment, the projection of first heat conduction layer and second heat conduction layer on base layer is located in the range of base layer.

[0007] In some specific embodiments, the position of through slot on first heat conduction layer corresponds to the position of through slot on second heat conduction layer one by one.

[0008] By making the through slot on first heat conduction layer correspond to the through slot on second heat conduction layer, when one surface of heat conduction layer is connected with the uneven surface of external element, or when heat sink expands or shrinks due to temperature change, the connection direction of different independent blocks on both sides of through slot in heat conduction layer and external element is different, so that the stress generated in heat sink structure can be relieved by the deformation of through slot.

[0009] It should be noted that the present application does not limit the specific position of the through slot on the first heat-conductive layer and the second heat-conductive layer. The user can determine the position of the through slot and the size of the through slot according to the specific connection position of the first heat-conductive layer and / or the second heat-conductive layer to the external structure that needs to be connected in the actual use process.

[0010] In some specific embodiments, the through slot includes a straight slot, and the through slots on the first heat-conductive layer and the second heat-conductive layer are parallel to each other in the length direction.

[0011] By opening the through slot on the first heat-conductive layer and the second heat-conductive layer, the distribution of the structural rigidity of the first heat-conductive layer and the second heat-conductive layer can be changed, so that the first heat-conductive layer and the second heat-conductive layer can be more reliably connected to external components or heat dissipation media.

[0012] In some specific embodiments, the cross section of the through slot includes a rectangle or a trapezoid. In actual application, the cross section of the through slot can be a square or a rectangle.

[0013] In some specific embodiments, the plurality of through slots are uniformly distributed on the first heat-conductive layer and / or the second heat-conductive layer.

[0014] In some specific embodiments, the projection of the through slot on the base layer is a curved line.

[0015] It should be noted that the present application does not specifically limit the number of through slots. The user can adjust the number of through slots and the width of the through slots according to the size of the base layer, the size of the first heat-conductive layer and the second heat-conductive layer in the actual situation. In actual application, a plurality of through slots can be staggered on the heat-conductive layer, which makes the projection of the staggered position between the through slots on the base layer possibly irregular.

[0016] In some specific embodiments, the heat-conductive layer includes a metal layer with a Brinell hardness of 200-800 MPa. The metal layer with a Brinell hardness in this range is a medium-hardness metal layer, which can offset the stress generated inside the heat sink structure.

[0017] In some specific embodiments, the first heat-conductive layer and the second heat-conductive layer include one or more of a copper layer, an aluminum layer, a silver layer, and a tungsten layer. In actual application, the first heat-conductive layer and the second heat-conductive layer can use the same metal layer, or different metal layers according to actual needs.

[0018] In some specific embodiments, the base layer includes a silicon carbide layer and / or an aluminum nitride layer. In actual application, by using an insulating layer with good heat-conducting performance such as a silicon carbide layer and / or an aluminum nitride layer as the base layer, heat can be effectively transferred outward while preventing electrical short circuits.

[0019] In practical applications, by setting the through groove on the first heat-conducting layer and the second heat-conducting layer, the amount of material in the heat-conducting layer can be further reduced, and the overall weight of the heat sink structure can be reduced. For some heat sink structures with large volume, reducing the overall weight of the heat sink structure can further prevent the bending of the body of the heat sink structure due to gravity and other reasons during connection.

[0020] In a second aspect, a semiconductor device is provided, which includes any of the heat sink structures described above. In one specific embodiment, the semiconductor device includes a heat-generating element and a heat-dissipating medium, the heat-generating element is attached to the first heat-conducting layer, and the heat-dissipating medium is attached to the second heat-conducting layer. By using the heat sink structure with deformation resistance, the heat sink structure can be suitable for various conditions of the non-flat surface of the heat-generating element, such as the curved surface. In various conditions, the heat sink structure and the heat-generating element can be well attached, which expands the application scenarios of the heat sink structure and improves the overall deformation resistance and service life of the semiconductor device.

[0021] Beneficial effects: The heat sink structure with deformation resistance and the semiconductor device provided by the heat sink structure can improve the overall deformation resistance and service life of the semiconductor device. BRIEF DESCRIPTION OF DRAWINGS

[0022] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following will briefly introduce the drawings needed in the embodiments. It should be understood that the following drawings only show some embodiments of the present application, and therefore should not be considered as limiting the scope. For those skilled in the art, other related drawings can also be obtained without creative labor on the basis of these drawings.

[0023] Figure 1 It is a cross-sectional structure schematic diagram of the present application;

[0024] Figure 2 It is a schematic diagram of the second heat-conducting layer connecting the heat-dissipating medium of the present application;

[0025] Figure 3Fig. 1 is a schematic view of a first heat-conductive layer of the present application to which a chip is connected;

[0026] Figure 4 Fig. 2 is a schematic view of another cross-sectional structure of the present application.

[0027] Reference numerals are as follows: 1 - base layer; 21 - first heat-conductive layer; 22 - second heat-conductive layer; 3 - through groove; 4 - independent block; 51 - heat-dissipating medium; 52 - chip. DETAILED DESCRIPTION

[0028] The concept, specific structure, and technical effects of the present application will be described clearly and completely below in connection with embodiments and drawings, so as to fully understand the purpose, features, and effects of the present application.

[0029] In the following, various embodiments of the present application will be described more fully. The present application can have various embodiments, and adjustments and changes can be made therein. However, it should be understood that there is no intention to limit various embodiments of the present application to the specific embodiments disclosed herein, but the present application should be understood to cover all adjustments, equivalents, and / or alternatives falling within the spirit and scope of various embodiments of the present application.

[0030] In the following, the term "include" or "may include" used in various embodiments of the present application indicates the presence of the disclosed function, operation, or element, and does not limit the addition of one or more functions, operations, or elements. In addition, as used in various embodiments of the present application, the terms "include", "have", and their cognates merely mean to indicate the presence of a specific feature, number, step, operation, element, component, or combination of the foregoing, and should not be understood as first excluding the presence or addition of one or more other features, numbers, steps, operations, elements, components, or combinations of the foregoing or the possibility of one or more features, numbers, steps, operations, elements, components, or combinations of the foregoing.

[0031] In various embodiments of the present application, the expression "or" or "at least one of A or / and B" includes any combination of the listed terms or all combinations thereof. For example, the expression "A or B" or "at least one of A or / and B" can include A, can include B, or can include both A and B.

[0032] The expressions used in various embodiments of the present application, such as "first", "second", etc., can modify various constituent elements in various embodiments, but can not limit the corresponding constituent elements. For example, the above expressions do not limit the order and / or importance of the elements. The above expressions are only for the purpose of distinguishing one element from other elements. For example, the first user device and the second user device indicate different user devices, although both are user devices. For example, without departing from the scope of various embodiments of the present application, a first element can be referred to as a second element, and similarly, a second element can be referred to as a first element.

[0033] It should be noted that in the present application, unless otherwise explicitly specified and defined, the terms "mounting", "connecting", "fixing" and the like should be understood in a broad sense, for example, it can be fixedly connected, or it can be detachably connected, or integrally connected; it can be mechanically connected, or it can be electrically connected; it can be directly connected, or it can be indirectly connected through an intermediate medium; it can be the communication inside two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0034] In the present application, those skilled in the art need to understand that the terms indicating the orientation or position relationship in the text are based on the orientation or position relationship shown in the drawings, which is only for the convenience of describing the present application and simplifying the description, and is not intended to indicate or imply that the indicated device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present application.

[0035] The terms used in various embodiments of the present application are only for the purpose of describing specific embodiments and are not intended to limit various embodiments of the present application. As used herein, the singular form is intended to include the plural form, unless the context clearly indicates otherwise. Unless otherwise defined, all terms used herein (including technical and scientific terms) have the same meaning as understood by those skilled in the art to which various embodiments of the present application belong. The terms (such as those defined in a commonly used dictionary) will be interpreted to have the same meaning as the context in the relevant technical field and will not be interpreted to have an idealized meaning or an overly formal meaning, unless clearly defined in various embodiments of the present application.

[0036] Embodiment one

[0037] The present embodiment provides a deformation-resistant heat sink structure, and the specific scheme is as follows:

[0038] In a first aspect, a deformation-resistant heat sink structure is provided, comprising a base layer 1, a first heat-conducting layer 21 and a second heat-conducting layer 22.

[0039] The first heat-conducting layer 21 and the second heat-conducting layer 22 are respectively arranged on the two opposite sides of the base layer 1; one or more through slots 3 are respectively arranged on the first heat-conducting layer 21 and the second heat-conducting layer 22, and the first heat-conducting layer 21 and the second heat-conducting layer 22 are respectively divided into a plurality of independent blocks 4 through the through slots 3, so as to improve the stress balance degree of the heat sink structure, as shown in Figure 1 .

[0040] In one embodiment, the projections of the first heat-conducting layer 21 and the second heat-conducting layer 22 on the base layer 1 are located within the range of the base layer 1.

[0041] In some embodiments, the positions of the through slots 3 on the first heat-conducting layer 21 and the second heat-conducting layer 22 are one-to-one corresponding, as shown in Figure 1 and Figure 4 .

[0042] By making the through slots 3 on the first heat-conducting layer 21 and the second heat-conducting layer 22 corresponding to each other, when one of the heat-conducting layers is connected with the uneven surface of an external element, or when the heat sink expands or shrinks due to temperature change, the connection directions of the different independent blocks 4 on both sides of the through slots 3 in the heat-conducting layer with the external element are different, so that the stress generated in the heat sink structure can be relieved by the deformation of the through slots 3.

[0043] It should be noted that the embodiments do not limit the specific positions of the through slots 3 on the first heat-conducting layer 21 and the second heat-conducting layer 22, and the user can determine the positions of the through slots 3 and the sizes of the through slots 3 according to the specific connection positions of the first heat-conducting layer 21 and / or the second heat-conducting layer 22 with the external structure to be connected in the actual use process.

[0044] In one embodiment, one of the heat-conducting layers is connected with an external element having an arc-shaped surface, or after being connected with the external element, the external element is deformed, such as bending, so that the connection surface between the heat-conducting layer on this side and the external element is curved. At this time, the heat-conducting layer connected on the other side of the base layer 1 is also deformed, and the through slots 3 in the heat-conducting layer can offset the deformation of the heat-conducting layer, so as to maintain the stress balance in the heat sink structure.

[0045] In some embodiments, the through slots 3 include straight slots, and the through slots 3 on the first heat-conducting layer and the second heat-conducting layer are parallel to each other in the length direction. In one embodiment, the first heat-conducting layer 21 and the second heat-conducting layer 22 are symmetrically arranged relative to the base layer 1.

[0046] By opening the through-slots 3 on the first and second heat-conducting layers 21 and 22, the distribution of the structural rigidity of the first and second heat-conducting layers 21 and 22 can be changed, so that the first and second heat-conducting layers 21 and 22 can be more reliably connected to external components or heat-dissipating media 51.

[0047] In some embodiments, the cross-section of the through-slots 3 is rectangular or trapezoidal. In actual applications, the cross-section of the through-slots 3 can be square or rectangular.

[0048] In some embodiments, the plurality of through-slots 3 are evenly distributed on the first and / or second heat-conducting layers 21 and 22. By evenly arranging the plurality of through-slots 3 on the first and / or second heat-conducting layers 21 and 22, the first and / or second heat-conducting layers 21 and 22 can be virtually divided into a plurality of independent blocks 4 of uniform size, so that the heat dissipation of each block is more uniform.

[0049] In some embodiments, the through-slots 3 can also divide the first and / or second heat-conducting layers 21 and 22 into independent blocks 4 of different sizes. In actual applications, the first heat-conducting layer 21 is used to connect to external heat-generating components, and the second heat-conducting layer 22 is used to connect to heat-dissipating media 51. In some cases, when the external heat-generating component is small in size, such as a chip 52 that projects far less than the base layer 1, the chip 52 can only be connected to a portion of the first heat-conducting layer 21, such as shown in FIG. 2, so that the portion of the first heat-conducting layer 21 connected to the chip 52 is subjected to more heat. In an embodiment, the independent block 4 of the first heat-conducting layer 21 that is directly connected to the external heat-generating component has a projection area on the base layer 1 that is larger than the projection area of other independent blocks 4 on the first heat-conducting layer 21 on the base layer 1. Figure 3

[0050] In some embodiments, the projection of the through-slots 3 on the base layer 1 is curved.

[0051] It should be noted that the number of through-slots 3 is not specifically limited in the present application. The user can adjust the number of through-slots 3 and the width of the through-slots 3 according to the size of the base layer 1, the size of the first and second heat-conducting layers 21 and 22, and the like, so as to improve the stress balance of the heat sink structure. In actual applications, a plurality of through-slots 3 can be arranged staggered on the heat-conducting layers, so that the projection of the staggered positions of the through-slots 3 on the base layer 1 can be irregular.

[0052] In some embodiments, the heat-conducting layer comprises a metal layer with a Brinell hardness of 200-800 MPa. The metal layer with a Brinell hardness in this range is a medium-hardness metal layer that can offset the stress generated inside the heat sink structure. ​

[0053] In some embodiments, the first heat-conductive layer 21 and the second heat-conductive layer 22 comprise one or more of a copper layer, an aluminum layer, a silver layer, and a tungsten layer. In actual applications, the first heat-conductive layer 21 and the second heat-conductive layer 22 can adopt the same metal layer, or different metal layers according to actual needs.

[0054] In some embodiments, the base layer 1 comprises a silicon carbide layer and / or an aluminum nitride layer. In actual applications, by adopting an insulating layer with good heat-conductive performance such as a silicon carbide layer and / or an aluminum nitride layer as the base layer 1, heat can be effectively transferred outward while preventing electrical short circuit.

[0055] In actual applications, by providing the through slot 3 on the first heat-conductive layer 21 and the second heat-conductive layer 22, the amount of material in the heat-conductive layer can be further reduced, and the overall weight of the heat sink structure can be reduced. For some heat sink structures with large volume, reducing the overall weight of the heat sink structure can further prevent the body from bending due to gravity and other reasons during connection.

[0056] The embodiment provides a deformation-resistant heat sink structure. One or more through slots are respectively provided on the first heat-conductive layer and the second heat-conductive layer. The first heat-conductive layer and the second heat-conductive layer are respectively divided into multiple independent blocks by the through slots. The stress balance degree of the heat sink structure is improved. The through slots can provide a space for stress accumulated in the heat sink structure when the elements connected by the heat-conductive layer are deformed, so that the stress can be redistributed at the edges of the through slots, and the possibility of deformation of the heat sink structure is reduced.

[0057] Embodiment Two

[0058] The embodiment provides a semiconductor device comprising the heat sink structure in any of the foregoing technical solutions. In one embodiment, the semiconductor device comprises a heat-generating element and a heat dissipation medium 51. The heat-generating element is connected to the first heat-conductive layer 21, and the heat dissipation medium 51 is connected to the second heat-conductive layer 22, as shown in Figure 3 and Figure 2 By adopting the deformation-resistant heat sink structure, the heat sink structure can be adapted to various conditions such as an arc-shaped surface of the heat-generating element. In various conditions, the heat sink structure and the heat-generating element can be well connected.

[0059] The embodiment provides a semiconductor device, by adopting the anti-deformation heat sink structure in the foregoing technical scheme, a through groove is arranged on the first heat conduction layer and the second heat conduction layer, the through groove can provide a releasing space for stress accumulated in the heat sink structure when elements connected with the heat conduction layer are deformed, so that the stress can be redistributed at the edge of the through groove, the possibility of deformation of the heat sink structure is reduced, the application scene of the heat sink structure is widened, and the overall anti-deformation capability and service life of the semiconductor device can be improved.

[0060] The above is a specific description of the preferred embodiment of the utility model, but the utility model is not limited to the embodiments, and those skilled in the art can make various equivalent modifications or replacements without departing from the spirit of the utility model, and these equivalent modifications or replacements are all included in the range defined by the claims of the present application.

Claims

1. A thermally stable, deformation resistant heat sink structure, characterized by, The heat sink structure comprises a base layer, a first heat-conducting layer and a second heat-conducting layer. The first heat-conducting layer and the second heat-conducting layer are respectively arranged on the two opposite sides of the base layer. One or more through-slots are respectively formed in the first heat-conducting layer and the second heat-conducting layer, and the first heat-conducting layer and the second heat-conducting layer are respectively divided into multiple independent blocks through the through-slots, so as to improve the stress balance degree of the heat sink structure.

2. A deformation resistant heat sink structure according to claim 1, wherein The through-slots in the first heat-conducting layer and the through-slots in the second heat-conducting layer are one-to-one corresponding.

3. A deformation resistant heat sink structure according to claim 1, wherein The through-slots comprise straight slots, and the through-slots in the first heat-conducting layer and the through-slots in the second heat-conducting layer are parallel to each other in the length direction.

4. The compliant heat sink structure of claim 1, wherein The cross section of the through-slots comprises a rectangle or a trapezoid.

5. The compliant heat sink structure of claim 1, wherein, Multiple through-slots are uniformly distributed on the first heat-conducting layer and / or the second heat-conducting layer.

6. The compliant heat sink structure of claim 1, wherein The projection of the through-slots on the base layer is a curved line.

7. The compliant heat sink structure of claim 1 wherein, The heat-conducting layer comprises a metal layer with a Brinell hardness of 200-800 MPa.

8. The compliant heat sink structure of claim 1, wherein, The first heat-conducting layer and the second heat-conducting layer comprise one or more of a copper layer, an aluminum layer, a silver layer and a tungsten layer.

9. The compliant heat sink structure of claim 1, wherein, The base layer comprises a silicon carbide layer and / or an aluminum nitride layer.

10. A semiconductor device, characterized by comprising: The heat sink structure comprises a base layer, a first heat-conducting layer and a second heat-conducting layer. The heat sink structure comprises a base layer, a first heat-conducting layer and a second heat-conducting layer.

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