Wafer drying device

Abstract

The utility model discloses a wafer drying device, and the device comprises a carrying platform which is used for carrying a wafer; the first drying unit is used for spraying drying liquid to the wafer; the second drying unit is used for removing the drying liquid to dry the wafer, the second drying unit comprises one or more gas nozzles, and the included angle between the extending direction of at least one gas nozzle and the surface of the wafer is 0-90 degrees; and the first driving unit is used for driving the carrying platform to drive the wafer to rotate. According to the embodiment of the utility model, the wafer drying effect can be improved.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor manufacturing, and in particular to a wafer drying apparatus. Background Technology

[0002] Currently, metal-oxide-semiconductor (MOS) field-effect transistors are widely used in the semiconductor field, especially in smart cards, radio frequency identification (RFID) devices, new mobile phones, and other small, lightweight, and powerful electronic devices, which in turn places higher demands on the fabrication of semiconductor devices.

[0003] However, in the actual drying process of cleaned wafers, there is a problem of poor drying effect. Therefore, how to provide a technical solution to improve the drying effect of wafers has become a technical problem that needs to be solved by those skilled in the art. Utility Model Content

[0004] The technical problem solved by this invention is to provide a wafer drying device to dry the wafer, thereby improving the drying effect of the wafer.

[0005] To address the aforementioned problems, this utility model provides a wafer drying apparatus, comprising: a stage for supporting the wafer; a first drying unit for spraying a drying liquid onto the wafer; a second drying unit for removing the drying liquid to dry the wafer, the second drying unit comprising one or more gas nozzles, at least one gas nozzle extending at an angle (0, 90°) to the surface of the wafer; and a first driving unit for driving the stage to rotate the wafer.

[0006] Optionally, the drying device further includes: a second driving unit; the second drying unit includes: a rotating rod coupled to the second driving unit; wherein the gas nozzle is connected to the rotating rod and is used to spray gas onto the wafer surface to remove the drying liquid; the second driving unit is used to drive the rotating rod to move the gas nozzle.

[0007] Optionally, the gas nozzle includes: a first cylindrical gas nozzle; the second driving unit drives the rotating rod to rotate the first cylindrical gas nozzle relative to the rotating wafer; wherein the gas ejected from the first cylindrical gas nozzle removes the drying liquid to dry the wafer.

[0008] Optionally, the gas nozzle includes: a second cylindrical gas nozzle, disposed perpendicular to the wafer surface; at least one conical annular jet channel, each conical annular jet channel forming an angle (0, 90°) with the wafer surface, the conical annular jet channel surrounding the second cylindrical gas nozzle, and the plurality of conical annular jet channels being spaced apart.

[0009] Optionally, the first driving unit is further configured to fix the stage to fix the wafer, and the second driving unit fixes the second cylindrical gas nozzle and the conical annular jet channel so that the gas ejected from the second cylindrical gas nozzle and the conical annular jet channel removes the drying liquid to dry the wafer.

[0010] Optionally, the shape of the second cylindrical gas nozzle along the cross-section parallel to the wafer surface includes one or more of the following: circular, square, elliptical, and triangular; the shape of the conical annular jet channel along the cross-section parallel to the wafer surface includes one or more of the following: circular annular, square annular, triangular annular, polygonal annular, and elliptical annular.

[0011] Optionally, the conical annular jet channel further includes: a conical annular liquid suction channel located within the inner wall forming the conical annular jet channel; and one or more adsorption holes located on the inner wall forming the conical annular liquid suction channel and communicating with the conical annular liquid suction channel for absorbing the drying liquid splashed from the wafer.

[0012] Optionally, the first drying unit includes: a liquid nozzle for spraying the drying liquid onto the wafer surface; and a liquid supply subunit connected to the liquid nozzle.

[0013] Optionally, the drying liquid includes one or more of isopropanol, ethanol, acetone, butanol, and ethyl acetate; the gas includes one or more of nitrogen, helium, neon, and argon.

[0014] Optionally, the stage includes one or more of grippers or suction cups for securing the wafer on the stage.

[0015] Compared with the prior art, the technical solution of this application has the following advantages:

[0016] The drying apparatus described in this application includes: a stage, a first drying unit, a second drying unit, and a first driving unit. The second drying unit includes one or more gas nozzles. The first drying unit is used to spray drying liquid onto the wafer to displace moisture on the cleaned wafer. The extension direction of the gas nozzles of the second drying unit is set to form an angle (0°, 90°) with the surface of the wafer, which can reduce the probability of the drying liquid splashing onto the surface area of ​​the already dried wafer during the drying process, thereby improving the drying effect of the wafer. Attached Figure Description

[0017] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of this application. For those skilled in the art, other drawings can be obtained based on the provided drawings without creative effort.

[0018] Figure 1 This is a schematic diagram of the structure of a wafer drying device;

[0019] Figure 2 This is a schematic diagram of the structure of a wafer drying device according to an embodiment of the present invention;

[0020] Figures 3 to 5 This is a schematic diagram of the structure of a wafer drying device according to another embodiment of the present invention;

[0021] Figures 6 to 9 This is a schematic diagram of the working principle of a wafer drying device according to another embodiment of this utility model. Detailed Implementation

[0022] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0023] As can be seen from the background technology, in the actual drying process of cleaned wafers, there is a problem of poor drying effect. The reasons for the poor drying effect are analyzed below.

[0024] Figure 1 This is a schematic diagram of the structure of a wafer drying device. (Example) Figure 1 As shown, the drying apparatus for the wafer 100 includes an air knife 101.

[0025] During the drying process of the wafer 100 by the drying device, the air outlet direction F1 of the air knife 101 is perpendicular to the surface of the wafer 100, and at the same time the air knife 101 moves along the direction F2 parallel to the surface of the wafer 100 to blow the moisture 102 adhering to the surface of the wafer 100 to the edge of the wafer 100, so as to dry the wafer 100.

[0026] The above-mentioned drying device has the following problems:

[0027] First, simply using the air knife 101 cannot completely dry the moisture 102 on the surface of the wafer 100, which increases the probability of residual moisture 102b on the surface of the wafer 100 and reduces the drying effect of the wafer 100.

[0028] Secondly, during the drying process, the gas blown out by the air knife 101 along the direction F1 perpendicular to the surface of the wafer 100 causes moisture 102 on the surface of the wafer 100 to splash randomly onto the already cleaned surface of the wafer, which also reduces the drying effect of the wafer 100. Figure 1 As shown, the moisture 102 on the surface of the wafer is randomly splashed along direction F3 to position 103 on the surface of the already cleaned wafer 100.

[0029] In summary, such as Figure 1 The drying apparatus for the wafer shown has a problem with poor drying effect during the drying process.

[0030] To address the aforementioned technical problems, this utility model provides a wafer drying apparatus that can improve the wafer drying effect.

[0031] To make the above-mentioned objectives, features and advantages of this utility model more apparent and understandable, the utility model will be described below with reference to the accompanying drawings.

[0032] Figure 2 This is a schematic diagram of the structure of a wafer drying device according to an embodiment of the present invention.

[0033] The drying apparatus includes: a stage for supporting the wafer; a first drying unit for spraying a drying liquid onto the wafer; a second drying unit for removing the drying liquid to dry the wafer, the second drying unit including one or more gas nozzles, at least one gas nozzle having an extension direction at an angle (0, 90°) to the surface of the wafer; and a first driving unit for driving the stage to rotate the wafer.

[0034] The drying apparatus described in this application has two aspects: firstly, the drying liquid sprayed by the first drying unit onto the wafer can displace the moisture on the cleaned wafer, thereby achieving the drying process; secondly, by making the extension direction of the gas nozzle of the second drying unit form an angle of (0, 90°) with the surface of the wafer, the probability of the drying liquid splashing randomly onto the surface area of ​​the already dried wafer during the drying process can be reduced, thus improving the drying effect of the wafer.

[0035] Continue to refer to Figure 2 The drying device includes a stage 200.

[0036] The stage 200 is used to support the wafer 201.

[0037] The platform 200 is made of materials including: metal (such as stainless steel, aluminum, etc.) or antistatic plastic (such as polycarbonate, electro-polypropylene, acrylic, etc.); the platform 200 is a cylindrical structure, which includes any of the following: cylindrical structure, elliptical cylindrical structure, square cylindrical structure, etc. This application embodiment does not limit the material and specific cylindrical structure of the platform 200; those skilled in the art can adjust and set it according to actual conditions. In this embodiment, the platform 200 is made of metal and is a cylindrical structure.

[0038] In this embodiment, a semiconductor device film layer is formed on the wafer 201; in other embodiments, no semiconductor device film layer is formed on the wafer 201. The surface used to form the semiconductor device film layer is the surface of the wafer 201, and the surface opposite to the surface of the wafer 201 is the back surface of the wafer 201.

[0039] It should be noted that the wafer drying apparatus of this invention can dry both the surface and the back side of the wafer 201. In this embodiment, the wafer drying apparatus dries the surface of the wafer 201, but this does not limit the invention.

[0040] Continue to refer to Figure 2 The drying apparatus includes: a first drying unit.

[0041] The first drying unit is used to spray drying liquid onto the wafer 201.

[0042] In this embodiment, after cleaning the wafer 201, some water will remain on the wafer 201. The first drying unit sprays drying liquid onto the wafer 201 to replace the water remaining on the surface of the wafer 201, thereby removing the water remaining on the wafer 201.

[0043] The drying principle is as follows: the surface tension of the drying liquid is lower than that of water, which allows it to spread and cover the surface of wafer 201 better; water easily forms water droplets on the surface of wafer 201, while the drying liquid can be evenly distributed on the surface of wafer 201 and cover the water; due to the volatility of the drying liquid, it will carry away the water on the surface of wafer 201 over time, reducing the potential contamination of the wafer 201 surface by water, thereby improving the drying effect of wafer 201. That is, the drying effect of wafer 201 is improved by utilizing the low surface tension and easy volatility of the drying liquid.

[0044] The first drying unit includes a liquid nozzle 202 for spraying the drying liquid onto the surface of the wafer 201.

[0045] In this embodiment, the direction in which the liquid nozzle 202 sprays the drying liquid is perpendicular to the surface of the wafer 201. In other embodiments, the angle between the direction in which the liquid nozzle 202 sprays the drying liquid and the surface of the wafer 201 is within the range of (0, 90°) and is greater than 0 degrees.

[0046] In this embodiment, the direction of the liquid spraying of the drying liquid by the liquid nozzle 202 is perpendicular to the surface of the wafer 201, and the starting position of spraying the drying liquid is located at the center of the wafer 201. In other embodiments, the starting position of spraying the drying liquid is other positions outside the center of the wafer 201. Those skilled in the art can select the starting position of spraying the drying liquid according to actual needs.

[0047] The cross-sectional view of the liquid nozzle 202 along the direction perpendicular to the spraying of the drying liquid includes one or more of the following shapes: circle, square, ellipse, triangle or polygon. In this embodiment, the cross-sectional view of the liquid nozzle 202 along the direction perpendicular to the spraying of the drying liquid is circular.

[0048] The liquid nozzle 202 is made of metal (such as stainless steel, aluminum, etc.) or antistatic plastic (such as polycarbonate, electro-polypropylene, acrylic, etc.); in this embodiment, the liquid nozzle 202 is made of metal.

[0049] The first drying unit further includes a liquid supply subunit connected to the liquid nozzle 202.

[0050] The liquid supply subunit includes: a storage tank 203 for storing the drying liquid, and a connecting pipe 204 connecting the storage tank 203 and the liquid nozzle 202.

[0051] The first drying unit further includes a drying power subunit (not shown) that sprays the drying liquid in the storage tank 203 onto the surface of the wafer 201 through the connecting pipe 204 and the liquid nozzle 202.

[0052] In this embodiment, the first drying unit sprays a drying liquid onto the surface of the wafer 201 to dry the surface of the wafer 201. In other embodiments, the first drying unit also sprays a drying liquid onto the back side of the wafer 201 to dry the back side of the wafer 201.

[0053] The drying solution includes one or more of isopropanol, ethanol, acetone, butanol, and ethyl acetate; in this embodiment, the drying solution is isopropanol.

[0054] It should be noted that isopropanol has a lower surface tension than water, which allows it to spread and cover the wafer 201 surface better. Water easily forms droplets on the wafer 201 surface, while isopropanol can distribute evenly and cover the water. The presence of a hydroxyl group in the isopropanol molecule gives it polarity, allowing it to form hydrogen bonds with water molecules, thus promoting its solubility in water. Over time, due to the volatility of isopropanol, it carries away moisture from the wafer 201 surface, reducing potential contamination and improving the drying effect of the wafer 201.

[0055] Continue to refer to Figure 2 The stage 200 includes one or more of grippers or suction cups.

[0056] The grippers or suction cups are used to fix the wafer 201 onto the stage 200.

[0057] In this embodiment, the wafer 201 is fixed on the stage 200 by the gripper 205; the gripper 205 moves towards the center of the wafer 201 to hold the wafer 201 in place, thereby fixing the wafer 201 on the stage 200; the gripper 205 moves away from the center of the wafer 201 to release the wafer 201.

[0058] The number of grippers 205 is greater than or equal to 2. In this embodiment, the number of grippers 205 is 4.

[0059] The drying device includes: a first drive unit (not shown).

[0060] The first driving unit is used to drive the stage 200 to rotate the wafer 201.

[0061] In this embodiment, when the first drying unit sprays drying liquid onto the wafer 201, the first driving unit drives the stage 200 to rotate the wafer 201, so that the drying liquid sprayed onto the wafer 201 is evenly dispersed on the surface of the wafer 201, so that the moisture on the surface of the wafer 201 can be covered by the drying liquid, so that the moisture is carried away from the surface of the wafer 201 by the volatile drying liquid, thereby improving the drying effect.

[0062] Continue to refer to Figure 2 In this embodiment, the first driving unit includes: a first power subunit 206 and a first rotating shaft 207.

[0063] In this embodiment, the first power subunit 206 includes: a first motor that provides power and a first speed controller that controls the rotation speed of the first motor.

[0064] The stage 200 is connected to the first power subunit 206 via the first rotating shaft 207, so that the first power subunit 206 drives the stage 200 to rotate via the first rotating shaft 207, thereby causing the stage 200 to drive the wafer 201 to rotate, so that the drying liquid sprayed onto the wafer 201 is evenly dispersed on the surface of the wafer 201.

[0065] The first power subunit 206 drives the stage 200 to rotate at a constant speed or at a variable speed via the first rotating shaft 207. In this embodiment, the first motor in the first power subunit 206 drives the stage 200 to rotate at a constant speed via the first rotating shaft 207, so that the drying liquid is evenly dispersed on the surface of the wafer 201, so that the moisture on the surface of the wafer 201 can be covered by the drying liquid, thereby improving the drying effect.

[0066] The drying apparatus includes a second drying unit.

[0067] The second drying unit is used to remove the drying liquid to dry the wafer 201.

[0068] It should be noted that the drying liquid is volatile and can easily remove the moisture on the surface of the wafer 201. By using the second drying unit, the drying liquid can be fully mixed with the moisture and blown to the edge of the wafer 201, which speeds up the removal of the drying liquid and improves the drying effect and efficiency.

[0069] It should be noted that the moisture on the surface of wafer 201 can also be removed during the process of removing the drying liquid.

[0070] The second drying unit includes a gas nozzle.

[0071] The gas nozzle is used to spray gas onto the surface of the wafer 201 to remove the drying liquid located on the surface of the wafer 201.

[0072] Continue to refer to Figure 2 In this embodiment, the gas nozzle includes a first cylindrical gas nozzle 300.

[0073] The extension direction of the at least one gas nozzle forms an angle (0, 90°) with the surface of the wafer 201.

[0074] In this embodiment, the extension direction of the first columnar gas nozzle 300 forms a 45° angle with the surface of the wafer 201, which can reduce the probability of splashed drying liquid splashing onto the already cleaned area of ​​the wafer 201 and improve the drying effect.

[0075] The gas includes one or more of nitrogen, helium, neon, and argon. Because nitrogen is the most abundant gas in the atmosphere and is relatively inexpensive, it is used in this embodiment.

[0076] The drying apparatus further includes a second driving unit; the second drying unit includes a rotating rod coupled to the second driving unit. The gas nozzle is connected to the rotating rod and is used to spray gas onto the surface of the wafer 201 to remove the drying liquid; the second driving unit is used to drive the rotating rod to move the gas nozzle.

[0077] Continue to refer to Figure 2 In this embodiment, the second driving unit includes: a second power subunit 301 and a second rotating shaft 302.

[0078] In this embodiment, the second power subunit 301 includes: a second motor that provides power and a second speed controller that controls the rotation speed of the second motor.

[0079] In this embodiment, the rotating rod includes: a main rotating rod 303a, a first rotating rod 303b, and a second rotating rod 303c. The first rotating rod 303b is connected to the main rotating rod 303a via the second rotating rod 303c. In other embodiments, the rotating rod is the main rotating rod 303a.

[0080] The rotating rod is coupled to the second drive unit. In this embodiment, the rotating main rod 303a is connected to the second power subunit 301 of the second drive unit through the second rotating shaft 302.

[0081] The gas nozzle is connected to the rotating rod and is used to spray gas onto the surface of the wafer 201 to remove the drying liquid. In this embodiment, the first columnar gas nozzle 300 is connected to the end of the first rotating rod 303b and is used to spray gas onto the surface of the wafer 201 to remove the drying liquid.

[0082] In this embodiment, the rotating rod is a hollow structure, and the gas is transmitted to the first columnar gas nozzle 300 through the rotating rod. In other embodiments, the gas is input to the first columnar gas nozzle 300 through an external pipe.

[0083] The second drive unit is used to drive the rotating rod to move the gas nozzle. The second drive unit drives the rotating rod to rotate the first cylindrical gas nozzle 300 relative to the rotating wafer 201. In this embodiment, the second motor in the second power subunit 301 of the second drive unit drives the rotating main rod 303a through the second rotating shaft 302 to drive the second rotating rod 303c and the first rotating rod 303b, so as to drive the first cylindrical gas nozzle 300 to rotate relative to the rotating wafer 201.

[0084] The first cylindrical gas nozzle 300 rotates relative to the rotating wafer 201, including: the first gas nozzle rotates clockwise, counterclockwise, or swings back and forth around a preset point on the wafer 201. In this embodiment, the first driving unit drives the wafer 201 to rotate, and the second driving unit drives the first cylindrical gas nozzle 300 to swing back and forth around the center of the wafer 201 to spray gas onto the surface of the wafer 201, so as to blow the drying liquid to the edge of the wafer 201, thereby improving the drying effect.

[0085] It should be noted that the first driving unit drives the wafer 201 to rotate clockwise and counterclockwise.

[0086] It should be noted that the gas ejected from the first column gas nozzle 300 removes the drying liquid to dry the wafer 201.

[0087] The shape of the cross-section of the first cylindrical gas nozzle 300 along the extension direction perpendicular to the first cylindrical gas nozzle 300 includes one or more of the following: circular, square, elliptical, and triangular; in this embodiment, the shape of the cross-section of the first cylindrical gas nozzle 300 along the extension direction perpendicular to the first cylindrical gas nozzle 300 is circular.

[0088] It should be noted that the distance between the first columnar gas nozzle 300 and the surface of the wafer 201 can be adjusted by those skilled in the art according to actual needs, but this should not limit the present invention.

[0089] Figures 3 to 5 This is a schematic diagram of the structure of a wafer drying device according to another embodiment of this utility model. Figure 3 and Figure 2 A comparison reveals that the only difference between this embodiment and the previous embodiment lies in the structure and number of gas nozzles. For the sake of simplicity and clarity in the accompanying drawings, this embodiment is based on the structural schematic diagram of the drying device in the previous embodiment, but it does not limit the scope of this invention.

[0090] The drying unit includes multiple gas nozzles.

[0091] The plurality of gas nozzles includes: a second cylindrical gas nozzle and at least one conical annular jet channel. (Continue to refer to...) Figure 3 In this embodiment, there is one second columnar gas nozzle, namely the second columnar gas nozzle 400, and there are two conical annular jet channels, namely the first conical annular jet channel 401 and the second conical annular jet channel 402.

[0092] In this embodiment, the second columnar gas nozzle 400 is arranged perpendicularly to the surface of the wafer 201, which facilitates blowing the drying liquid on the surface of the wafer 201 towards the area below the conical annular jet channel.

[0093] Each conical annular jet channel forms an angle (0°, 90°) with the surface of the wafer 201. In this embodiment, the first conical annular jet channel 401 forms an angle (0°, 90°) with the surface of the wafer 201, and the second conical annular jet channel 402 forms an angle (0°, 90°) with the surface of the wafer 201. In a specific embodiment, the first conical annular jet channel 401 forms an angle of 45 degrees with the surface of the wafer 201, and the second conical annular jet channel 402 forms an angle of 45 degrees with the surface of the wafer 201, which has the following effects:

[0094] First, the 45-degree angle allows the gas ejected from the first conical annular jet channel 401 and the second conical annular jet channel 402 to be more evenly distributed on the surface of the wafer 201, thereby ensuring the consistency of the drying effect.

[0095] Secondly, the 45-degree angle can reduce the probability that the gas ejected from the first conical annular jet channel 401 and the second conical annular jet channel 402 will cause the drying liquid to splash onto the already dried area on the wafer 201.

[0096] Third, the 45-degree angle allows for the effective use of dry gas and reduces unnecessary waste.

[0097] Third, the 45-degree angle helps optimize the gas distribution, allowing the residual drying liquid on the surface of wafer 201 to be blown away from the edge of wafer 201 more quickly.

[0098] The conical annular jet channel surrounds the second cylindrical gas nozzle, and multiple conical annular jet channels are spaced apart.

[0099] Continue to refer to Figure 3 and Figure 4 In this embodiment, the first conical annular jet channel 401 and the second conical annular jet channel 402 surround the second cylindrical gas nozzle 400, and the first conical annular jet channel 401 and the second conical annular jet channel 402 are spaced apart.

[0100] In other embodiments, the number of the plurality of conical annular jet channels is greater than or equal to three, and the interval between each conical annular jet channel may be equal or unequal, which can be set according to the needs of the drying device.

[0101] The shape of the second cylindrical gas nozzle 400 along its cross-section parallel to the surface of the wafer 201 includes one or more of the following: circular, square, elliptical, and triangular; the shape of the conical annular jet channel along its cross-section parallel to the surface of the wafer 201 includes one or more of the following: circular annular, square annular, triangular annular, polygonal annular, and elliptical annular. (Continue to refer to...) Figure 4 In this embodiment, the second cylindrical gas nozzle 400 has a circular shape in the cross-section along the direction parallel to the surface of the wafer 201, and the conical annular jet channel has an annular shape in the cross-section along the direction parallel to the surface of the wafer 201.

[0102] It should be noted that, in order to facilitate the demonstration of the shape of the second cylindrical gas nozzle 400 and the conical annular jet channel along the cross-section parallel to the surface of the wafer 201, the following is provided: Figure 4 The cross-section in the image is set to gray.

[0103] Figures 6 to 9 This is a schematic diagram of the working principle of a wafer drying device according to another embodiment of the present invention.

[0104] Continue to refer to Figures 6 to 9 , combined Figure 2 In this embodiment, when the drying unit sprays the drying liquid 500 onto the surface of the rotating wafer 201 (e.g.) Figure 6As shown), the first driving unit is further configured to fix the stage 200 to fix the wafer 201; the second driving unit moves the second cylindrical gas nozzle 400 to a preset position on the wafer 201, the preset position being the center of the wafer 201; the second driving unit fixes the second cylindrical gas nozzle 400 and the conical annular jet channel; the gas ejected from the second cylindrical gas nozzle 400 blows the drying liquid toward the second conical annular jet channel 402 adjacent to the second cylindrical gas nozzle 400 (e.g., Figure 7 (As shown); the second conical annular jet channel 402 sprays gas onto the surface of the wafer 201, blowing the drying liquid located at the second conical annular jet channel 402 toward the first conical annular jet channel 401 (as shown); Figure 8 (As shown); the first conical annular jet channel 401 sprays gas onto the surface of the wafer 201, blowing the drying liquid located at the first conical annular jet channel 401 to the edge of the wafer 201, so that the gas ejected from the second cylindrical gas nozzle 400 and the conical annular jet channel removes the drying liquid to dry the wafer 201 (as shown); Figure 9 (As shown).

[0105] The conical annular jet channel further includes a conical annular liquid suction channel.

[0106] When the second cylindrical gas nozzle and / or the conical annular jet channel blow gas onto the wafer surface, the drying liquid on the wafer surface is splashed onto the sidewall of the conical annular jet channel. The conical annular liquid absorption channel is used to absorb the splashed drying liquid, reducing the probability that the splashed drying liquid will splash onto the already dried area of ​​the wafer surface.

[0107] The conical annular liquid absorption channel is located within the inner wall of the conical annular jet channel. One or more adsorption holes are located on the inner wall of the conical annular liquid absorption channel and communicate with the conical annular liquid absorption channel for absorbing the drying liquid splashed from the wafer.

[0108] Continue to refer to Figure 5 , Figure 5 for Figure 3 A schematic diagram of the spatial structure of the first conical annular jet channel 401.

[0109] It should be noted that surfaces A and B form the outer wall of the first conical annular jet channel 401, and surfaces C and D form the inner wall of the first conical annular jet channel 401. In this embodiment, the conical annular liquid absorption channel on the first conical annular jet channel 401 is located within the inner wall forming the first conical annular jet channel 401; that is, surfaces C and D enclose the conical annular liquid absorption channel on the first conical annular jet channel 401.

[0110] In this embodiment, the outer wall of the first conical annular jet channel 401 is a solid structure, and the inner sidewall of the first conical annular jet channel 401 opposite to the wafer, the surface M, is a solid bottom surface.

[0111] The conical annular liquid absorption channel on the second conical annular jet channel 402 is located inside the inner wall forming the second conical annular jet channel 402. The conical annular liquid absorption channel on the second conical annular jet channel 402 can be derived from the spatial structure diagram of the first conical annular jet channel 401, which will not be elaborated here.

[0112] Continue to refer to Figure 5 The first conical annular jet channel 401 has a plurality of adsorption holes E, which are located on the inner sidewall D forming the first conical annular liquid absorption channel and are connected to the first conical annular liquid absorption channel.

[0113] The second conical annular jet channel 402 has multiple adsorption holes, which are located on the inner wall forming the second conical annular liquid absorption channel and are connected to the second conical annular liquid absorption channel. The structure of the second conical annular jet channel 402 having multiple adsorption holes can be deduced from the spatial structure diagram of the first conical annular jet channel 401, which will not be elaborated here.

[0114] Continue to refer to Figure 3 In this embodiment, a first gas valve 603 is provided near the surface of the wafer 201 at the second cylindrical gas nozzle 400, for controlling the gas to be sprayed only from the second cylindrical gas nozzle 400 onto the surface of the wafer 201; a second gas valve 601 is provided at the connection between the first conical annular jet channel 401 and the second cylindrical gas nozzle 400, for controlling the gas to be sprayed only from the first conical annular jet channel 401 onto the surface of the wafer 201; a third gas valve 602 is provided at the connection between the second conical annular jet channel 402 and the second cylindrical gas nozzle 400, for controlling the gas to be sprayed only from the second conical annular jet channel 402 onto the surface of the wafer 201.

[0115] It should be noted that, for the sake of brevity and clarity in the accompanying diagrams, Figures 7 to 9 The first air valve 603, the second air valve 601, and the third air valve 602 are not shown, but this is not intended to limit the scope of this application.

[0116] Although the present invention has been disclosed above with reference to preferred embodiments, it is not intended to limit the present invention. Any person skilled in the art can make possible changes and modifications to the technical solution of the present invention by utilizing the methods and techniques disclosed above without departing from the spirit and scope of the present invention. Therefore, any simple modifications, equivalent changes and alterations made to the above embodiments based on the technical essence of the present invention without departing from the content of the technical solution of the present invention shall fall within the protection scope of the technical solution of the present invention.

Claims

1. A wafer drying apparatus, characterized in that, include: A stage for supporting the wafer; The first drying unit is used to spray drying liquid onto the wafer; A second drying unit is used to remove the drying liquid to dry the wafer. The second drying unit includes one or more gas nozzles, and the extension direction of at least one gas nozzle is at an angle (0, 90°) to the surface of the wafer. The first driving unit is used to drive the stage to rotate the wafer.

2. The drying apparatus as described in claim 1, characterized in that, The drying device further includes: a second drive unit; The second drying unit includes: The rotating rod is coupled to the second drive unit; The gas nozzle is connected to the rotating rod and is used to spray gas onto the wafer surface to remove the drying liquid. The second drive unit is used to drive the rotating rod to move the gas nozzle.

3. The drying apparatus as described in claim 2, characterized in that, The gas nozzle includes: a first cylindrical gas nozzle; The second drive unit drives the rotating rod to rotate the first column gas nozzle relative to the rotating wafer; The gas ejected from the first columnar gas nozzle removes the drying liquid to dry the wafer.

4. The drying apparatus as described in claim 2, characterized in that, The gas nozzle includes: The second cylindrical gas nozzle is positioned perpendicular to the wafer surface; At least one conical annular jet channel, each conical annular jet channel forming an angle (0, 90°) with the wafer surface, the conical annular jet channel surrounding the second cylindrical gas nozzle, and the plurality of conical annular jet channels being spaced apart.

5. The drying apparatus as described in claim 4, characterized in that, The first driving unit is further configured to fix the stage to fix the wafer, and the second driving unit fixes the second cylindrical gas nozzle and the conical annular jet channel so that the gas ejected from the second cylindrical gas nozzle and the conical annular jet channel removes the drying liquid to dry the wafer.

6. The drying apparatus as described in claim 4, characterized in that, The shape of the second columnar gas nozzle along the cross-section parallel to the wafer surface includes one or more of the following: circular, square, elliptical, and triangular. The shape of the conical annular jet channel along the cross-section parallel to the wafer surface includes one or more of the following: circular annulus, square annulus, triangular annulus, polygonal annulus, and elliptical annulus.

7. The drying apparatus as described in claim 4, characterized in that, The conical annular jet channel further includes: A conical annular liquid suction channel is located within the inner wall forming the conical annular jet channel; One or more adsorption pores are located on the inner wall of the conical annular liquid absorption channel and communicate with the conical annular liquid absorption channel for absorbing the drying liquid splashed from the wafer.

8. The drying apparatus as claimed in claim 1, characterized in that, The first drying unit includes: A liquid nozzle is used to spray the drying liquid onto the wafer surface; The liquid supply subunit is connected to the liquid nozzle.

9. The drying apparatus as described in claim 2, characterized in that, The drying solution includes one or more of isopropanol, ethanol, acetone, butanol, and ethyl acetate. The gas includes one or more of nitrogen, helium, neon, and argon.

10. The drying apparatus as claimed in claim 1, characterized in that, The stage includes one or more of grippers or suction cups for fixing the wafer on the stage.

Images