Electrostatic chuck integrated with wafer grounding function
By setting conductive ceramic plugs at the edge of the electrostatic chuck or setting conductive coatings on the outer peripheral sidewalls, the problems of wafer breakage and small electrical contact area caused by pin connections are solved, achieving higher reliability and stability.
Patent Information
- Application Number
- CN202423213074.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-25
- Publication Date
- 2026-01-13
- Estimated Expiration
- 2034-12-25
AI Technical Summary
In the process of wafer grounding, existing electrostatic chucks are prone to risks such as breakage, scratches, and chipping when the pins are connected to the wafer. In addition, the electrical contact area is small, making it difficult to balance the bearing surface between the wafer and the electrostatic chuck.
A conductive ceramic plug is placed on the edge of the electrostatic chuck or a conductive coating is placed on the outer peripheral sidewall. The conductive ceramic plug is connected to the first ceramic dielectric layer, the adsorption electrode layer, and the second ceramic dielectric layer and is in contact with the metal base. The conductive coating covers the outer peripheral sidewall to realize the wafer grounding function and improve the electrical contact area.
The increased electrical contact area between the electrostatic chuck and the wafer avoids the risks of wafer warping, cracking, scratching, and splitting, thus improving reliability and stable electrical connection.
Smart Images
Figure CN223798672U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The utility model relates to electrostatic chuck technical field, concretely relates to a kind of electrostatic chuck integrated wafer grounding function. BACKGROUND
[0002] Electrostatic chuck is a kind of chuck using electrostatic adsorption principle to be processed wafer is adsorbed on its surface, and temperature of wafer surface is controlled by back blowing gas, and the electrostatic adsorption technology used by it is an advantage technology replacing traditional mechanical clamping, vacuum adsorption mode, and has wide application in semiconductor, panel display, optics and other fields.In the adsorption process of electrostatic chuck, voltage is usually applied to electrostatic chuck, so that electrostatic charge is generated between electrostatic chuck and wafer, so that wafer can be adsorbed on electrostatic chuck, then relevant operation is carried out, and desorption process of electrostatic chuck is needed after operation is completed.In prior art, residual charge of wafer and electrostatic chuck is often grounded to eliminate, to avoid wafer from sticking phenomenon.At present, electrostatic chuck on market often uses pin to be electrically connected with wafer, and pin and wafer connection is easy to cause wafer to break, scratch, crack and other risks, and the electric contact area of pin and wafer is small, so it is difficult to balance the bearing surface of wafer and electrostatic chuck, and further improvement is needed. SUMMARY
[0003] In order to overcome the shortcomings and deficiencies existing in the prior art, the utility model aims at providing a kind of electrostatic chuck integrated wafer grounding function, the electrostatic chuck is provided with through hole, and conductive ceramic plug is embedded in the through hole, or conductive coating is arranged on the outer peripheral wall of electrostatic chuck, the conductive ceramic plug and / or conductive coating are connected with first ceramic dielectric layer, adsorption electrode layer and second ceramic dielectric layer, and contact with metal base, so as to realize wafer grounding function, and improve the electric contact area of electrostatic chuck and wafer, so that wafer warping, breakage, scratch, crack risk does not easily occur when electrostatic chuck is used, and use reliability is improved.
[0004] To achieve the above object, the utility model adopts the following technical scheme: a kind of electrostatic chuck integrated wafer grounding function, the electrostatic chuck includes first ceramic dielectric layer, adsorption electrode layer, second ceramic dielectric layer and metal base, which are sequentially arranged from top to bottom, the upper surface of the first ceramic dielectric layer is provided with a plurality of spaced distribution bosses;The edge of the electrostatic chuck is provided with a plurality of through holes and / or the outer peripheral wall of the first ceramic dielectric layer, adsorption electrode layer and second ceramic dielectric layer is provided with conductive coating;The through hole sequentially penetrates first ceramic dielectric layer, adsorption electrode layer and second ceramic dielectric layer from top to bottom, and conductive ceramic plug is embedded in the through hole, the conductive ceramic plug sequentially penetrates first ceramic dielectric layer, adsorption electrode layer and second ceramic dielectric layer and the lower end contacts with metal base;The lower end of the conductive coating contacts with metal base.
[0005] Further, the conductive ceramic plug is an alumina conductive plug or a silicon carbide conductive plug.
[0006] Further, the conductive ceramic plug has a cross section in a shape of a circle, a cross or an "8".
[0007] Further, the plurality of through holes are arranged in a ring array at the edge of the electrostatic chuck.
[0008] Further, the through hole comprises a thick section and a thin section connected to the lower end of the thick section, the conductive ceramic plug comprises a stopper and a contact part arranged at the lower end of the stopper, the cross section area of the stopper is larger than that of the contact part, and the contact part and the stopper are respectively embedded in the thin section and the thick section.
[0009] Further, the conductive coating is in a ring shape, and the conductive coating is wrapped around the outer peripheral side wall of the first ceramic dielectric layer, the adsorption electrode layer and the second ceramic dielectric layer.
[0010] Further, the conductive coating comprises a plurality of fan ring conductive parts arranged at intervals, the inner side of the fan ring conductive part is attached to the outer peripheral side wall of the first ceramic dielectric layer, the adsorption electrode layer and the second ceramic dielectric layer, the plurality of fan ring conductive parts are arranged in a ring array, and the lower end of the plurality of fan ring conductive parts are in contact with the metal base.
[0011] Further, the conductive coating is a diamond-like carbon coating or a silicon carbide coating.
[0012] Further, the edge of the electrostatic chuck is provided with a plurality of through holes, the through holes sequentially penetrate the first ceramic dielectric layer, the adsorption electrode layer and the second ceramic dielectric layer from top to bottom, the conductive ceramic plug is embedded in the through hole, the conductive ceramic plug sequentially penetrates the first ceramic dielectric layer, the adsorption electrode layer and the second ceramic dielectric layer and is in contact with the metal base at the lower end; the outer peripheral side wall of the first ceramic dielectric layer, the adsorption electrode layer and the second ceramic dielectric layer is provided with a conductive coating, and the lower end of the conductive coating is in contact with the metal base.
[0013] Further, the cross section of the metal base is in a shape of a circle or a polygon.
[0014] Further, the cross section of the first ceramic dielectric layer, the adsorption electrode layer and the second ceramic dielectric layer is in a shape of a circle or a polygon.
[0015] The utility model discloses an integrated wafer grounding function's electrostatic chuck has the advantages that the integrated wafer grounding function's electrostatic chuck of the utility model is through setting up the conductive ceramic plug of electrostatic chuck's edge and / or the conductive coating of electrostatic chuck's outer circumferential side wall, the conductive ceramic plug and / or the conductive coating are connected with first ceramic dielectric layer, adsorption electrode layer, second ceramic dielectric layer and contact with metal base, realize wafer grounding function. The electrostatic chuck utilizes the electrostatic adsorption principle and fixes wafer, and the setting of conductive ceramic plug or conductive coating can improve the electric contact area of electrostatic chuck and wafer, and balance the bearing surface of wafer and electrostatic chuck, and the risk of wafer warping, rupture, scratch, crack is not easy to appear, and it is helpful to improve reliability and provide stable electrical connection. BRIEF DESCRIPTION OF DRAWINGS
[0016] Figure 1 It is the exploded view of the integrated wafer grounding function's electrostatic chuck of example 1.
[0017] Figure 2 It is the top view of the integrated wafer grounding function's electrostatic chuck of example 1.
[0018] Figure 3 It is the top view of the adsorption electrode of example 1.
[0019] Figure 4 It is the three-dimensional structure schematic diagram of the integrated wafer grounding function's electrostatic chuck of example 2.
[0020] Figure 5 It is the top view of the integrated wafer grounding function's electrostatic chuck of example 2.
[0021] Figure 6 It is the top view of the integrated wafer grounding function's electrostatic chuck of example 3.
[0022] Figure 7 It is the top view of the integrated wafer grounding function's electrostatic chuck of example 4.
[0023] Figure 8 It is the top view of the integrated wafer grounding function's electrostatic chuck of example 5.
[0024] The figure mark is: 11, first ceramic dielectric layer;12, adsorption electrode layer;121, adsorption electrode;13, second ceramic dielectric layer;14, metal base;15, conductive ceramic plug;151, stop portion;152, contact portion;16, through -hole;17, boss;18, conductive coating;19, fan ring conductive piece. DETAILED DESCRIPTION
[0025] In order to facilitate the understanding of the person skilled in the art, the utility model is further explained below in combination with examples and drawings, and the content mentioned in the implementation mode is not the limitation of the utility model.
[0026] Example 1
[0027] like Figures 1-3 As shown, an electrostatic chuck with integrated wafer grounding function is disclosed. The electrostatic chuck includes, from top to bottom, a first ceramic dielectric layer 11, an adsorption electrode layer 12, a second ceramic dielectric layer 13, and a metal base 14. The upper surface of the first ceramic dielectric layer 11 has multiple evenly distributed protrusions 17. The edge of the electrostatic chuck has multiple through holes 16. Each through hole 16 passes through the first ceramic dielectric layer 11, the adsorption electrode layer 12, and the second ceramic dielectric layer 13 from top to bottom. A conductive ceramic plug 15 is embedded within each through hole 16, passing through the first ceramic dielectric layer 11, the adsorption electrode layer 12, and the second ceramic dielectric layer 13, with its lower end contacting the metal base 14. The multiple through holes 16 are arranged in a ring array along the edge of the electrostatic chuck. The adsorption electrode layer 12 is provided with adsorption electrodes 121, which are used to connect to an external power source.
[0028] This embodiment of the electrostatic chuck with integrated wafer grounding function achieves wafer grounding by setting a conductive ceramic plug 15 on the edge of the electrostatic chuck. The conductive ceramic plug 15 is connected to the first ceramic dielectric layer 11, the adsorption electrode layer 12, and the second ceramic dielectric layer 13, and contacts the metal base 14. The electrostatic chuck uses the principle of electrostatic adsorption to fix the wafer. The setting of the conductive ceramic plug 15 can increase the electrical contact area between the electrostatic chuck and the wafer, balance the bearing surface between the wafer and the electrostatic chuck, reduce the risk of wafer warping, cracking, scratching, and splitting, and help improve reliability and provide a stable electrical connection.
[0029] Furthermore, the conductive ceramic plug 15 is an alumina conductive plug or a silicon carbide conductive plug. The conductive ceramic plug 15, made of alumina or silicon carbide, possesses high resistivity, high insulation, and high strength. In this embodiment, the adsorption and conductivity are uniformly distributed on the wafer surface, preventing warping, deformation, or scratches on the wafer, and ensuring a stable adsorption force. In this embodiment, the cross-sections of the conductive ceramic plug 15 and the through-hole 16 are circular, and the shape of the conductive ceramic plug 15 can be flexibly configured according to actual needs.
[0030] Furthermore, the through hole 16 includes a coarse section and a narrow section connected to the lower end of the coarse section. A stop step is formed at the connection between the narrow and coarse sections. The conductive ceramic plug 15 includes a stop portion 151 and a contact portion 152 disposed at the lower end of the stop portion 151. The cross-sectional area of the stop portion 151 is larger than the cross-sectional area of the contact portion 152. The contact portion 152 and the stop portion 151 are respectively embedded in the narrow and coarse sections. The longitudinal section of the conductive ceramic plug 15 is T-shaped. Due to the above structure, when the conductive ceramic plug 15 passes through the through hole 16 from top to bottom, the outer peripheral edge of the stop portion 151 abuts against the stop step, facilitating accurate positioning of the conductive ceramic plug 15 and preventing it from sliding downwards.
[0031] Furthermore, the cross-section of the metal base 14 is circular or polygonal, and the cross-sections of the first ceramic dielectric layer 11, the adsorption electrode layer 12, and the second ceramic dielectric layer 13 are circular or polygonal, such as squares or regular hexagons. The electrostatic chuck of this embodiment can be designed in different sizes and shapes according to actual needs to meet practical application requirements.
[0032] Example 2
[0033] like Figures 4-5 As shown, an electrostatic chuck with integrated wafer grounding function is disclosed. The electrostatic chuck includes a first ceramic dielectric layer 11, an adsorption electrode layer 12, a second ceramic dielectric layer 13, and a metal base 14 arranged sequentially from top to bottom. The upper surface of the first ceramic dielectric layer 11 has multiple evenly distributed protrusions 17. The edge of the electrostatic chuck has multiple through holes 16. Each through hole 16 passes through the first ceramic dielectric layer 11, the adsorption electrode layer 12, and the second ceramic dielectric layer 13 sequentially from top to bottom. A conductive ceramic plug 15 is embedded within each through hole 16, passing through the first ceramic dielectric layer 11, the adsorption electrode layer 12, and the second ceramic dielectric layer 13, with its lower end contacting the metal base 14. The adsorption electrode layer 12 is provided with adsorption electrodes 121 for connection to an external power source. The cross-sections of the conductive ceramic plug 15 and the through holes 16 are cross-shaped.
[0034] The rest of this embodiment is the same as that in Embodiment 1, and will not be repeated here.
[0035] Example 3
[0036] like Figure 6 As shown, the difference between this embodiment and embodiment 2 is that the cross-section of the conductive ceramic plug 15 and the through hole 16 is in the shape of an "8".
[0037] Example 4
[0038] like Figure 7As shown, an electrostatic chuck with integrated wafer grounding function is disclosed. The electrostatic chuck includes, from top to bottom, a first ceramic dielectric layer 11, an adsorption electrode layer 12, a second ceramic dielectric layer 13, and a metal base 14. The upper surface of the first ceramic dielectric layer 11 has multiple evenly distributed protrusions 17. The outer peripheral sidewalls of the first ceramic dielectric layer 11, the adsorption electrode layer 12, and the second ceramic dielectric layer 13 are provided with a conductive coating 18. The lower end of the conductive coating 18 contacts the metal base 14. The adsorption electrode layer 12 is provided with adsorption electrodes 121, which are used to connect to an external power source.
[0039] The electrostatic chuck with integrated wafer grounding function in this embodiment has a conductive coating 18 on its outer peripheral sidewall. This conductive coating 18 is connected to the first ceramic dielectric layer 11, the adsorption electrode layer 12, and the second ceramic dielectric layer 13, and contacts the metal base 14, thus achieving wafer grounding. The electrostatic chuck uses electrostatic adsorption to fix the wafer. The conductive coating 18 increases the electrical contact area between the electrostatic chuck and the wafer, balancing the bearing surfaces of the wafer and the electrostatic chuck, reducing the risk of wafer warping, cracking, scratches, and splitting, and contributing to improved reliability and a stable electrical connection.
[0040] Furthermore, the conductive coating 18 is annular and covers the outer peripheral sidewalls of the first ceramic dielectric layer 11, the adsorption electrode layer 12, and the second ceramic dielectric layer 13. The conductive coating 18 is connected to the first ceramic dielectric layer 11, the adsorption electrode layer 12, the second ceramic dielectric layer 13, and the metal base 14 to achieve wafer grounding, eliminating residual charge on the wafer and the electrostatic chuck, and preventing wafer sticking.
[0041] Furthermore, the conductive coating 18 is a diamond-like carbon (DLC) coating or a silicon carbide (SiC) coating. The conductive coating 18, made of DLC or SiC material, has the advantages of high resistivity, high insulation, and high strength.
[0042] Example 5
[0043] like Figure 8 As shown, the difference between this embodiment and embodiment 4 is that in this embodiment, the conductive coating 18 includes a plurality of spaced fan-shaped conductive elements 19. The inner side of the fan-shaped conductive elements 19 is attached to the outer peripheral sidewall of the first ceramic dielectric layer 11, the adsorption electrode layer 12, and the second ceramic dielectric layer 13. The plurality of fan-shaped conductive elements 19 are arranged in a ring array and the lower ends of the plurality of fan-shaped conductive elements 19 are in contact with the metal base 14.
[0044] Example 6
[0045] The electrostatic chuck of the integrated wafer grounding function in the embodiment comprises a first ceramic dielectric layer 11, an adsorption electrode layer 12, a second ceramic dielectric layer 13 and a metal base 14 arranged in sequence from top to bottom, a plurality of spaced distribution bosses 17 are arranged on the upper surface of the first ceramic dielectric layer 11, and the bosses 17 are uniformly distributed; a plurality of through holes 16 are arranged at the edge of the electrostatic chuck, the through holes 16 sequentially penetrate the first ceramic dielectric layer 11, the adsorption electrode layer 12 and the second ceramic dielectric layer 13 from top to bottom, and a conductive ceramic plug 15 is arranged in the through hole 16, the conductive ceramic plug 15 sequentially penetrates the first ceramic dielectric layer 11, the adsorption electrode layer 12 and the second ceramic dielectric layer 13 and the lower end of the conductive ceramic plug 15 is in contact with the metal base 14; a conductive coating 18 is arranged on the outer peripheral sidewall of the first ceramic dielectric layer 11, the adsorption electrode layer 12 and the second ceramic dielectric layer 13, and the lower end of the conductive coating 18 is in contact with the metal base 14. The adsorption electrode layer 12 is provided with an adsorption electrode 121, and the adsorption electrode 121 is used for communicating with an external power supply.
[0046] Further, the conductive coating 18 is annular, and the conductive coating 18 is wrapped on the outer peripheral sidewall of the first ceramic dielectric layer 11, the adsorption electrode layer 12 and the second ceramic dielectric layer 13. The conductive coating 18 is a diamond-like coating or a silicon carbide coating.
[0047] The electrostatic chuck of the integrated wafer grounding function in the embodiment realizes the wafer grounding function by arranging the conductive ceramic plug 15 at the edge of the electrostatic chuck and arranging the conductive coating 18 on the outer peripheral sidewall of the electrostatic chuck, and the conductive ceramic plug 15 and the conductive coating 18 are connected with the first ceramic dielectric layer 11, the adsorption electrode layer 12 and the second ceramic dielectric layer 13 and are in contact with the metal base 14. The electrostatic chuck fixes the wafer by using the electrostatic adsorption principle, the arrangement of the conductive ceramic plug 15 and the conductive coating 18 can improve the electrical contact area of the electrostatic chuck and the wafer, balance the bearing surface of the wafer and the electrostatic chuck, and the wafer is not prone to warping, cracking, scratching and fragmentation, which helps to improve the reliability and provide stable electrical connection. The remaining contents of the embodiment are the same as those of embodiment 1, and will not be described here.
[0048] The above embodiment is a preferred implementation scheme of the utility model, in addition to this, the utility model can be realized in other ways, and any obvious replacement without departing from the utility model concept is within the protection scope of the utility model.
Claims
1. An electrostatic chuck integrated with a wafer ground function, characterized by: The electrostatic chuck comprises a first ceramic dielectric layer, an adsorption electrode layer, a second ceramic dielectric layer and a metal base arranged in sequence from top to bottom, the upper surface of the first ceramic dielectric layer is provided with a plurality of spaced distribution bosses; the edge of the electrostatic chuck is provided with a plurality of through holes and / or the outer peripheral sidewall of the first ceramic dielectric layer, the adsorption electrode layer and the second ceramic dielectric layer is provided with a conductive coating; the through holes sequentially penetrate the first ceramic dielectric layer, the adsorption electrode layer and the second ceramic dielectric layer from top to bottom, the conductive ceramic plug is embedded in the through hole, the conductive ceramic plug sequentially penetrates the first ceramic dielectric layer, the adsorption electrode layer and the second ceramic dielectric layer and the lower end is in contact with the metal base; the lower end of the conductive coating is in contact with the metal base.
2. The electrostatic chuck integrated wafer ground function according to claim 1, wherein: The conductive ceramic plug is an alumina conductive plug or a silicon carbide conductive plug.
3. The electrostatic chuck integrated wafer ground function according to claim 1, wherein: The cross section of the conductive ceramic plug is circular, cross-shaped or "8" shaped.
4. The integrated wafer ground-capable electrostatic chuck of claim 1, wherein: The plurality of through holes are arranged in an annular array at the edge of the electrostatic chuck.
5. The integrated wafer ground-capable electrostatic chuck of claim 1, wherein: The through hole comprises a thick mouth section and a thin mouth section connected to the lower end of the thick mouth section, the conductive ceramic plug comprises a stop portion and a contact portion arranged at the lower end of the stop portion, the cross-sectional area of the stop portion is greater than that of the contact portion, and the contact portion and the stop portion are embedded in the thin mouth section and the thick mouth section, respectively.
6. The integrated wafer ground-capable electrostatic chuck of claim 1, wherein: The conductive coating is annular, and the conductive coating is wrapped around the outer peripheral sidewall of the first ceramic dielectric layer, the adsorption electrode layer and the second ceramic dielectric layer.
7. The integrated wafer ground-capable electrostatic chuck of claim 1, wherein: The conductive coating comprises a plurality of spaced fan ring conductive members, the inner side of the fan ring conductive member is attached to the outer peripheral sidewall of the first ceramic dielectric layer, the adsorption electrode layer and the second ceramic dielectric layer, the plurality of fan ring conductive members are arranged in an annular array, and the lower end of the plurality of fan ring conductive members is in contact with the metal base.
8. The electrostatic chuck integrated wafer ground function according to claim 6 or 7, characterized in that: The conductive coating is a diamond-like coating or a silicon carbide coating.
9. The integrated wafer ground-capable electrostatic chuck of claim 1, wherein: The edge of the electrostatic chuck is provided with a plurality of through holes, the through holes sequentially penetrate the first ceramic dielectric layer, the adsorption electrode layer and the second ceramic dielectric layer from top to bottom, the conductive ceramic plug is embedded in the through hole, the conductive ceramic plug sequentially penetrates the first ceramic dielectric layer, the adsorption electrode layer and the second ceramic dielectric layer and the lower end is in contact with the metal base; the outer peripheral sidewall of the first ceramic dielectric layer, the adsorption electrode layer and the second ceramic dielectric layer is provided with a conductive coating, and the lower end of the conductive coating is in contact with the metal base.
10. The integrated wafer ground function electrostatic chuck of claim 1, wherein: The cross section of the metal base is circular or polygonal.