Semiconductor device

Abstract

The utility model provides a semiconductor device. The semiconductor device comprises a cooling intermediary assembly, a first heat conduction assembly, a second heat conduction assembly, a first electronic assembly and a second electronic assembly. The cooling intermediary assembly has a first side and a second side opposite to each other and contains a cooling liquid. The first electronic component is arranged between the first heat conduction component and the first side of the cooling intermediary component. The second electronic component is disposed between the second thermally conductive component and the second side of the cooling interposer component.

Description

Technical Field

[0001] This utility model relates to a semiconductor device. Background Technology

[0002] As the driving power of semiconductor devices increases, the requirements for heat dissipation become increasingly stringent. Generally, semiconductor devices are equipped with heat dissipation paths to conduct the heat generated during the operation of the semiconductor chip, ensuring that the semiconductor device operates normally within the allowable interface temperature range. However, currently, the heat dissipation and conduction paths of semiconductor devices are mostly located on the same side of the semiconductor chip, limiting further improvements in their electrical performance and heat dissipation capabilities. Utility Model Content

[0003] This invention proposes a semiconductor device that can improve upon known problems.

[0004] The first embodiment of this utility model provides a semiconductor device. The semiconductor device includes a cooling intermediate component, a first thermally conductive component, a second thermally conductive component, a first electronic component, and a second electronic component. The cooling intermediate component has a first side and a second side opposite to each other and includes a coolant. The first electronic component is disposed between the first thermally conductive component and the first side of the cooling intermediate component. The second electronic component is disposed between the second thermally conductive component and the second side of the cooling intermediate component.

[0005] Based on the first embodiment, the cooling intermediate component includes an insulating layer. The insulating layer has an inlet, an outlet, and a channel, with the inlet and outlet communicating with the channel. Coolant is located within the channel.

[0006] Based on the first embodiment, the channel has a first inner surface and a second inner surface opposite to each other. The cooling intermediate component further includes a first protrusion. The first protrusion is connected to the first inner surface of the channel and extends toward the second inner surface.

[0007] Based on the first embodiment, the cooling intermediary component further includes a second protrusion. The second protrusion is connected to the second inner surface of the channel and extends toward the first inner surface.

[0008] Based on the first embodiment, the cooling intermediate component includes an insulating layer, a conductive pillar, and a conductive layer. The insulating layer has a first outer surface and a second outer surface opposite to each other. The conductive pillar extends from the first outer surface to the second outer surface. The conductive layer is formed on the first outer surface or the second outer surface.

[0009] Based on the first embodiment, the semiconductor device further includes a cooling module. A first thermally conductive component is located between the cooling module and the first electronic component.

[0010] A second embodiment of this utility model provides a semiconductor device. The semiconductor device includes a cooling intermediate component, a first thermally conductive component, a second thermally conductive component, a first electronic component, and a second electronic component. The cooling intermediate component has a first side and a second side opposite to each other. The first electronic component is disposed between the first thermally conductive component and the first side of the cooling intermediate component. The second electronic component is disposed between the second thermally conductive component and the second side of the cooling intermediate component. The cooling intermediate component includes a thermally conductive layer, a conductive pillar, and a conductive layer. The thermally conductive layer has a first outer surface and a second outer surface opposite to each other. The conductive pillar extends from the first outer surface to the second outer surface. The conductive layer is formed on either the first or second outer surface.

[0011] In the second embodiment, the thermally conductive layer is a diamond layer.

[0012] Based on the second embodiment, the semiconductor device further includes a cooling module and a thermally conductive wall. A first thermally conductive component is located between the cooling module and the first electronic component. The thermally conductive wall connects the thermally conductive layer of the cooling intermediate component and the cooling module.

[0013] A third embodiment of this utility model provides a semiconductor device. The semiconductor device includes a cooling intermediate component, a first thermally conductive component, a second thermally conductive component, and an electronic component. The cooling intermediate component has a first side and a second side opposite to each other and contains a coolant. The electronic component is embedded in the cooling intermediate component. The first thermally conductive component and the second thermally conductive component are respectively disposed on the first side and the second side.

[0014] Based on the third embodiment, the cooling intermediate component includes an insulating layer and a through-hole. The insulating layer has a first outer surface and a second outer surface opposite to each other. The through-hole extends from the first outer surface to the second outer surface. Electronic components are disposed within the through-hole.

[0015] Based on the third embodiment, the cooling intermediate component further includes a first conductive portion and a second conductive portion. The first conductive portion and the second conductive portion are located within the through-hole. The first conductive portion and the second conductive portion are respectively located on opposite sides of the electronic component.

[0016] Based on the third embodiment, the cooling intermediate component includes an insulating layer. The insulating layer has an inlet, an outlet, and a channel, with the inlet and outlet communicating with the channel. Coolant is located within the channel.

[0017] Based on the third embodiment, the channel has a first inner surface and a second inner surface opposite to each other. The cooling intermediate component further includes a first protrusion. The first protrusion is connected to the first inner surface of the channel and extends toward the second inner surface.

[0018] Based on the third embodiment, the cooling intermediary component further includes a second protrusion. The second protrusion is connected to the second inner surface of the channel and extends toward the first inner surface.

[0019] Based on the third embodiment, the cooling intermediate component includes an insulating layer, a conductive pillar, and a conductive layer. The insulating layer has a first outer surface and a second outer surface opposite to each other. The conductive pillar extends from the first outer surface to the second outer surface. The conductive layer is formed on the first outer surface or the second outer surface.

[0020] Based on the third embodiment, the semiconductor device further includes a cooling module. A first thermally conductive component is located between the cooling module and the cooling intermediate component.

[0021] A fourth embodiment of this utility model provides a semiconductor device. The semiconductor device includes a cooling intermediate component, a first thermally conductive component, a second thermally conductive component, a first electronic component, a second electronic component, and a protective film. The cooling intermediate component has a first side and a second side opposite to each other. The first electronic component is disposed between the first thermally conductive component and the first side of the cooling intermediate component. The second electronic component is disposed between the second thermally conductive component and the second side of the cooling intermediate component. The protective film covers the cooling intermediate component, the first thermally conductive component, the second thermally conductive component, the first electronic component, and the second electronic component.

[0022] Based on the fourth embodiment, the cooling intermediate component includes an insulating layer, a conductive pillar, and a conductive layer. The insulating layer has a first outer surface and a second outer surface opposite to each other. The conductive pillar extends from the first outer surface to the second outer surface. The conductive layer is formed on the first outer surface or the second outer surface.

[0023] Based on the fourth embodiment, the cooling intermediate component includes a thermally conductive layer, a conductive pillar, and a conductive layer. The thermally conductive layer has a first outer surface and a second outer surface opposite to each other. The conductive pillar extends from the first outer surface to the second outer surface. The conductive layer is formed on the first outer surface or the second outer surface.

[0024] Based on the fourth embodiment, the thermally conductive layer is a diamond layer.

[0025] Based on the fourth embodiment, the semiconductor device further includes a cooling module and a thermally conductive wall. A first thermally conductive component is located between the cooling module and the first electronic component. The thermally conductive wall connects the thermally conductive layer of the cooling intermediate component and the cooling module.

[0026] The fifth embodiment of this utility model provides a semiconductor device. The semiconductor device includes a cooling intermediate component, a first thermally conductive component, a second thermally conductive component, an electronic component, and a protective film. The cooling intermediate component has a first side and a second side opposite to each other. The electronic component is embedded within the cooling intermediate component. The protective film covers the cooling intermediate component, the first thermally conductive component, and the second thermally conductive component. The first thermally conductive component and the second thermally conductive component are respectively disposed on the first side and the second side.

[0027] Based on the fifth embodiment, the cooling intermediate component includes an insulating layer and a through-hole. The insulating layer has a first outer surface and a second outer surface opposite to each other. The through-hole extends from the first outer surface to the second outer surface. Electronic components are disposed within the through-hole.

[0028] Based on the fifth embodiment, the cooling intermediate component further includes a first conductive portion and a second conductive portion. The first conductive portion and the second conductive portion are located within the through-hole. The first conductive portion and the second conductive portion are respectively located on opposite sides of the electronic component.

[0029] The above brief description does not represent every embodiment or all aspects of this utility model. Rather, the foregoing brief description provides only examples of some novel aspects and features set forth herein. These features and benefits, as well as other features and benefits of this utility model, will readily become apparent from the following detailed description of several representative embodiments and methods of carrying out this utility model, accompanied by numerous accompanying drawings and the appended claims. Attached Figure Description

[0030] To make the above-mentioned objectives, features and advantages of this utility model more apparent and understandable, the specific embodiments of this utility model will be described in detail below with reference to the accompanying drawings, wherein:

[0031] Figure 1A A schematic diagram of an input device according to an embodiment of the present invention is shown.

[0032] Figure 1B Show Figure 1A An exploded view of the input device.

[0033] Figure 2 Show Figure 1A A schematic diagram of the first heat-conducting component.

[0034] Figure 3 A schematic diagram of a first heat-conducting component according to another embodiment of the present invention is shown.

[0035] Figure 4A A schematic diagram of a semiconductor device according to another embodiment of the present invention is shown.

[0036] Figure 4B Show Figure 4A A top view of the cooling intermediate components of a semiconductor device.

[0037] Figure 5 A schematic diagram of a semiconductor device according to another embodiment of the present invention is shown.

[0038] Figure 6 A cross-sectional view of a semiconductor device according to another embodiment of the present invention is shown.

[0039] Figure 7A cross-sectional view of a semiconductor device according to another embodiment of the present invention is shown.

[0040] Figure 8 A cross-sectional view of a semiconductor device according to another embodiment of the present invention is shown.

[0041] Figure 9 A cross-sectional view of a semiconductor device according to another embodiment of the present invention is shown.

[0042] Figure label:

[0043] 100, 200, 300, 400, 500, 600, 700: Semiconductor devices

[0044] 110, 210, 310, 410, 510, 710: Cooling intermediate components

[0045] 110s1, 310s1, 410s1, 510s1, 710s1: First side

[0046] 110s², 310s², 410s², 510s², 710s²: Second side

[0047] 111,211: Insulation layer

[0048] 111c1,211c1,411c1: First inner surface

[0049] 111c2, 211c2, 411c2: Second inner surface

[0050] 111s1,311s1,411s1,511s1,711s1: First outer surface

[0051] 111s2, 311s2, 411s2, 511s2, 711s2: Second outer surface

[0052] 111a,211a,411a: Entry point

[0053] 111b, 211b, 411b: Exports

[0054] 111c, 211c, 411c: Channels

[0055] 112: First protrusion

[0056] 113: Second protrusion

[0057] 114, 214, 314, 414, 514: Conductive pillars

[0058] 115,315,322,415,515,422: First conductive layer

[0059] 116,316,322,416,432,516: Second conductive layer

[0060] 120, 320, 420: First thermal conductive component

[0061] 121, 131, 321, 421: First heat-conducting layer

[0062] 121s1, 131s1: First face

[0063] 121s2, 131s2: Second side

[0064] 122, 132, 331, 431: Second thermal conductive layer

[0065] 123,133: Third heat-conducting layer

[0066] 124,180: First bonding layer

[0067] 125,190: Second bonding layer

[0068] 130, 330: Second thermal conductive component

[0069] 140: First Electronic Component

[0070] 141, 142, 151, 152: Bonding layers

[0071] 150: Second electronic component

[0072] 160,460: First cooling module

[0073] 170,470: Second cooling module

[0074] 2111: Hollow column

[0075] 380: First heat-conducting wall

[0076] 390: Second heat-conducting wall

[0077] 395A, 395B, 295C, 295D: Bonding layers

[0078] 440: Electronic Components

[0079] L: Coolant

[0080] 418: First conductive part

[0081] 419: Second conductive part

[0082] 417: Through-hole

[0083] 595: Protective film Detailed Implementation

[0084] Unless otherwise defined, all terms used herein (including technical and scientific terms) have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. It will be further understood that terms such as those defined in commonly used dictionaries should be interpreted as having the same meaning as they have in the context of the relevant technology and this invention, and will not be interpreted as having an idealized or overly formal meaning unless expressly defined herein.

[0085] Please refer to Figure 1A , 1B and 2, Figure 1A A schematic diagram of a semiconductor device 100 according to an embodiment of the present invention is shown. Figure 1B Show Figure 1A A top view of the cooling intermediate component 110 of the semiconductor device 100, and Figure 2 Show Figure 1A A schematic diagram of the first heat-conducting component 120.

[0086] like Figure 1A and 1B As shown, the semiconductor device 100 includes a cooling intermediary component 110, a first thermal conductive component 120, a second thermal conductive component 130, at least one first electronic component 140, at least one second electronic component 150, a first cooling module 160, a second cooling module 170, a first bonding layer 180, and a second bonding layer 190.

[0087] like Figure 1A and 1B As shown, the cooling intermediate component 110 has opposing first sides 110s1 and second sides 110s2 and contains coolant L. A first electronic component 140 is disposed between the first thermally conductive component 120 and the first side 110s1 of the cooling intermediate component 110. A second electronic component 150 is disposed between the second thermally conductive component 130 and the second side 110s2 of the cooling intermediate component 110. Thus, the heat generated by the first electronic component 140 and the second electronic component 150 during operation can be conducted to the outside through the thermally conductive paths on opposite sides of the cooling intermediate component 110. Compared to a single-sided cooling path, the semiconductor device 100 of this embodiment provides a dual-sided cooling path, which can significantly improve cooling efficiency.

[0088] like Figure 1A and 1B As shown, the cooling intermediate assembly 110 includes an insulating layer 111, at least one first protrusion 112, at least one second protrusion 113, at least one conductive post 114, a first conductive layer 115, and a second conductive layer 116.

[0089] like Figure 1A and 1BAs shown, the insulating layer 111 has an inlet 111a, an outlet 111b, and a channel 111c, with the inlet 111a and outlet 111b communicating with the channel 111c. The coolant L is located in the channel 111c and can enter the channel 111c through the inlet 111a and exit the channel 111c through the outlet 111b.

[0090] like Figure 1A and 1B As shown, in this embodiment, channel 111c extends, for example, along the X-axis and does not surround the conductive post 114. The conductive post may also be referred to herein as a through-via. In another embodiment, channel 111c may extend along the Y-axis, or along an axis that may intersect the X-axis and the Y-axis.

[0091] like Figure 1A and 1B As shown, channel 111c has opposing first inner surfaces 111c1 and second inner surfaces 111c2. A first protrusion 112 is connected to the first inner surface 111c1 of channel 111c and extends toward the second inner surface 111c2. The first protrusion 112 extends within channel 111c, increasing the contact area with the coolant L to increase cooling efficiency. Similarly, a second protrusion 113 is connected to the second inner surface 111c2 of channel 111c and extends toward the first inner surface 111c1. The second protrusion 113 extends within channel 111c, increasing the contact area with the coolant L to increase cooling efficiency. In one embodiment, the first protrusion 112 and the second protrusion 113 at least partially overlap along the thickness direction (e.g., the Z-axis) of the cooling intermediate assembly 110. In another embodiment, the first protrusion 112 and the second protrusion 113 may be offset along the X-axis.

[0092] In one embodiment, the insulating layer 111, the first protrusion 112, and the second protrusion 113 are, for example, integrally formed structures. In terms of materials, the insulating layer 111, the first protrusion 112, and the second protrusion 113 are, for example, made of insulating material.

[0093] like Figure 1A and 1BAs shown, the insulating layer 111 has opposing first outer surfaces 111s1 and second outer surfaces 111s2. Conductive pillars 114 may extend from the first outer surface 111s1 to the second outer surface 111s2. A first conductive layer 115 is formed on the first outer surface 111s1. The first conductive layer 115 is, for example, a patterned circuit layer, which may include at least one first line and / or a first pad, wherein the first pad can be connected to the first electronic component 140. A second conductive layer 116 is formed on the second outer surface 111s2. The second conductive layer 116 is, for example, a patterned circuit layer, which may include at least one second line and / or a second pad, wherein the second pad can be connected to the second electronic component 150. Furthermore, the materials of the conductive pillars 114, the first conductive layer 115, and / or the second conductive layer 116 may include copper or its alloys, or other high-thermal-conductivity electrical conductors (HTDCs), wherein the HTDCs have a thermal conductivity (TC) greater than 100 W / m·K.

[0094] like Figure 2 As shown, the first thermally conductive component 120 is, for example, a multilayer structure. For instance, the first thermally conductive component 120 includes a first thermally conductive layer 121, a second thermally conductive layer 122, a third thermally conductive layer 123, a first bonding layer 124, and a second bonding layer 125. The first thermally conductive layer 121 has a first surface 121s1 and a second surface 121s2. The first bonding layer 124 bonds the first surface 121s1 of the first thermally conductive layer 121 to the second thermally conductive layer 122, while the second bonding layer 125 bonds the second surface 121s2 of the first thermally conductive layer 121 to the third thermally conductive layer 123. Furthermore, the second thermally conductive layer 122 is not only thermally conductive but also electrically conductive, while the third thermally conductive layer 123 is, for example, electrically insulating. In another embodiment, the third thermally conductive layer 123 is not only thermally conductive but also electrically conductive, but the third thermally conductive layer 123 does not constitute the circuitry of the semiconductor device; that is, the third thermally conductive layer 123 does not participate in the circuit design of the semiconductor device.

[0095] like Figure 2 As shown, the material of the first thermally conductive layer 121 includes, for example, aluminum oxide, nitrogen oxide, etc. The material of the second thermally conductive layer 122 is, for example, a conductive material, such as copper, aluminum, or their alloys. The first bonding layer 124 and / or the second bonding layer 125 are, for example, made of a eutectic bonding material.

[0096] like Figure 1A As shown, the structure and / or material of the second heat-conducting component 130 may be similar to or the same as that of the first heat-conducting component 120, and will not be described in detail here. For example, as Figure 1AAs shown, the second thermally conductive component 130 is, for example, a multi-layer structure. For instance, the second thermally conductive component 130 includes a first thermally conductive layer 131, a second thermally conductive layer 132, a third thermally conductive layer 133, and a first bonding layer (not shown). Figure 1A ) and the second bonding layer (not shown in Figure 1A The first thermally conductive layer 131 has a first surface 131s1 and a second surface 131s2. A first bonding layer bonds the first surface 131s1 of the first thermally conductive layer 131 to the second thermally conductive layer 132, and a second bonding layer bonds the second surface 131s2 of the first thermally conductive layer 131 to the third thermally conductive layer 133. The material and / or properties of the second thermally conductive layer 132 may be the same as or similar to the material of the second thermally conductive layer 122, and the material and / or properties of the third thermally conductive layer 133 may be the same as or similar to the material of the third thermally conductive layer 123, which will not be described in detail here.

[0097] like Figure 1A and 2 As shown, the first electronic component 140 and / or the second electronic component 150 are, for example, high-power processors. In embodiments, multiple first electronic components 140 may be arranged side-by-side and / or multiple second electronic components 150 may be arranged side-by-side. The semiconductor device 100 further includes a bonding layer 141 and a bonding layer 142, wherein the bonding layer 141 physically connects and electrically connects the first electronic component 140 to a first conductive layer 115 of the cooling interposer 110, and the bonding layer 142 connects the first electronic component 140 to a second thermally conductive layer 122 of the first thermally conductive component 120. The bonding layer 142 is, for example, a die attach. The semiconductor device 100 further includes a bonding layer 151 and a bonding layer 152, wherein the bonding layer 151 physically connects and electrically connects the second electronic component 150 to the first conductive layer 115 of the cooling interposer 110, and the bonding layer 152 connects the second electronic component 150 to a second thermally conductive layer 132 of the second thermally conductive component 130. The bonding layer 152 is, for example, a die attach. In addition, the materials of bonding layers 141, 142, 151 and / or 152 may include solder (e.g., diffusion solder bonding material), or a combination of metal and solder, which may be used for the conductive and thermal connection of the first electronic component 140 and / or the second electronic component 150 to the connected components, or for adjusting the height of the electronic components as appropriate.

[0098] like Figure 1AAs shown, a first cooling module 160 is disposed on a first heat-conducting component 120, for example, the first heat-conducting component 120 is disposed between the first cooling module 160 and the first electronic component 140. The first cooling module 160 can conduct heat from the first electronic component 140 to a heat sink fin or fan (not shown). A second cooling module 170 is disposed on a second heat-conducting component 130, for example, the second heat-conducting component 130 is disposed between the second cooling module 170 and the second electronic component 150. The second cooling module 170 can conduct heat from the second electronic component 150 to a heat sink fin or fan (not shown). Furthermore, the first cooling module 160 and / or the second cooling module 170 may be applied to direct-to-chip liquid cooling devices, liquid immersion cooling devices, or combinations thereof, depending on the actual situation. Specifically, they may be heat sinks, cold plates, cooling components, fans, heat exchangers, or combinations thereof.

[0099] like Figure 1A As shown, the first bonding layer 180 may be disposed between the first cooling module 160 and the first thermally conductive component 120, while the second bonding layer 190 may be disposed between the second cooling module 170 and the second thermally conductive component 130. The first bonding layer 180 and / or the second bonding layer 190 are, for example, thermal interface materials (TIM).

[0100] Please refer to Figure 3 The diagram illustrates a first thermally conductive component 120' according to another embodiment of the present invention. The first thermally conductive component 120' is, for example, a multilayer structure. For instance, the first thermally conductive component 120' includes a first thermally conductive layer 121, a second thermally conductive layer 122, a third thermally conductive layer 123, a first bonding layer 124, a second bonding layer 125, a fourth thermally conductive layer 126, and a third bonding layer 127. The first thermally conductive layer 121 has a first surface 121s1 and a second surface 121s2. The first bonding layer 124 bonds the first surface 121s1 of the first thermally conductive layer 121 to the second thermally conductive layer 122; the second bonding layer 125 bonds the second surface 121s2 of the first thermally conductive layer 121 to the third thermally conductive layer 123; and the third bonding layer 127 bonds the third thermally conductive layer 123 to the fourth thermally conductive layer 126. In one embodiment, the material of the fourth thermally conductive layer 126 is, for example, aluminum or copper. The materials of the fourth thermally conductive layer 126 and the third thermally conductive layer 123 may be different, or they may be the same. The material of the third bonding layer 127 may include, for example, solder, or a combination of metal and solder.

[0101] Please refer to Figure 4A and 4B , Figure 4AA schematic diagram of a semiconductor device 200 according to another embodiment of the present invention is shown, and Figure 4B Show Figure 4A A top view of the cooling intermediate component 210 of the semiconductor device 200.

[0102] like Figure 4A and 4B As shown, the semiconductor device 200 includes a cooling intermediary component 210, a first thermal conductive component 120, a second thermal conductive component 130, at least one first electronic component 140, at least one second electronic component 150, a first cooling module 160, a second cooling module 170, a first bonding layer 180, and a second bonding layer 190.

[0103] like Figure 4A and 4B As shown, the cooling intermediate assembly 210 has opposing first sides 110s1 and second sides 110s2 and contains coolant L. A first electronic component 140 is disposed between the first heat-conducting assembly 120 and the first side 110s1 of the cooling intermediate assembly 210. A second electronic component 150 is disposed between the second heat-conducting assembly 130 and the second side 110s2 of the cooling intermediate assembly 210. Thus, the heat generated by the first electronic component 140 and the second electronic component 150 during operation can be conducted to the outside through the heat conduction paths on opposite sides of the cooling intermediate assembly 210.

[0104] like Figure 4A As shown, the cooling intermediate assembly 210 includes an insulating layer 211, at least one first protrusion 112, at least one second protrusion 113, at least one conductive post 114, a first conductive layer 115, and a second conductive layer 116.

[0105] like Figure 4A and 4B As shown, the insulating layer 211 has an inlet 211a, an outlet 211b, and a channel 211c, with the inlet 211a and outlet 211b communicating with the channel 211c. Coolant L is located within the channel 211c and can enter the channel 211c through the inlet 211a and exit the channel 211c through the outlet 211b. The channel 211c has opposing first inner surfaces 211c1 and second inner surfaces 211c2, and opposing first outer surfaces 211s1 and second outer surfaces 211s2. The insulating layer 211 further includes at least one hollow pillar 2111 extending from the first outer surface 211s1 to the second outer surface 211s2. The channel 211c may surround the hollow pillar 2111.

[0106] like Figure 4A and 4BAs shown, a first protrusion 112 is connected to a first inner surface 211c1 of channel 211c and extends toward a second inner surface 211c2. The first protrusion 112 extends within channel 211c, increasing the contact area with the coolant L and thus increasing cooling efficiency. Similarly, a second protrusion 113 is connected to a second inner surface 211c2 of channel 211c and extends toward the first inner surface 211c1. The second protrusion 113 extends within channel 211c, increasing the contact area with the coolant L and thus increasing cooling efficiency. In one embodiment, the first protrusion 112 and the second protrusion 113 at least partially overlap along the thickness direction (e.g., the Z-axis) of the cooling intermediate assembly 210. In another embodiment, the first protrusion 112 and the second protrusion 113 may be offset along the X-axis.

[0107] In one embodiment, the insulating layer 211, the first protrusion 112, and the second protrusion 113 are, for example, integrally formed structures. In terms of materials, the insulating layer 211, the first protrusion 112, and the second protrusion 113 are, for example, made of insulating material.

[0108] like Figure 4A and 4B As shown, the conductive pillar 114 extends from the first outer surface 211s1 to the second outer surface 211s2 and can fill the hollow portion 2111a of the hollow pillar 2111. A first conductive layer 115 is formed on the first outer surface 211s1. The first conductive layer 115 is, for example, a patterned circuit layer, which may include at least one first line and / or a first pad, wherein the first pad can be connected to the first electronic component 140. A second conductive layer 116 is formed on the second outer surface 211s2. The second conductive layer 116 is, for example, a patterned circuit layer, which may include at least one second line and / or a second pad, wherein the second pad can be connected to the second electronic component 150.

[0109] Please refer to Figure 5 The diagram illustrates a semiconductor device 300 according to another embodiment of the present invention. The semiconductor device 300 includes a cooling intermediate component 310, a first thermally conductive component 320, a second thermally conductive component 330, at least one first electronic component 140, at least one second electronic component 150, a first cooling module 160, a second cooling module 170, a first bonding layer 180, a second bonding layer 190, at least one first thermally conductive wall 380, at least one second thermally conductive wall 390, at least one bonding layer 395A, at least one bonding layer 395B, at least one bonding layer 395C, and at least one bonding layer 395D.

[0110] like Figure 5As shown, a first electronic component 140 is disposed between a first thermally conductive component 320 and a first side 310s1 of a cooling intermediate component 310. A second electronic component 150 is disposed between a second thermally conductive component 330 and a second side 310s2 of a cooling intermediate component 310. The cooling intermediate component 310 includes a thermally conductive layer 311, a first conductive layer 315, a second conductive layer 316, and at least one conductive pillar 314. The thermally conductive layer 311 has opposing first outer surfaces 311s1 and second outer surfaces 311s2. The conductive pillar 314 extends from the first outer surface 311s1 to the second outer surface 311s2.

[0111] like Figure 5 As shown, in this embodiment, the thermally conductive layer 311 is made of a high thermal conductivity material, for example. High thermal conductivity materials are, for example, materials with high thermal conductivity (HTC) and low coefficient of thermal expansion (LCTE), such as diamond, aluminum nitride, boron nitride, boron arsenide, or silicon carbide. In one embodiment, the thermally conductive layer 311 is, for example, a diamond layer. The thermal conductivity (TC) of diamond can be as high as 2400 W / m·K. A first conductive layer 315 may be formed on a first outer surface 311s1. The first conductive layer 315 is, for example, a patterned circuit layer, which may include at least one first line and / or a first pad, wherein the first pad can be connected to the first electronic component 140. A second conductive layer 316 is formed on a second outer surface 311s2. The second conductive layer 316 is, for example, a patterned circuit layer, which may include at least one second line and / or a second pad, wherein the second pad can be connected to the second electronic component 150. In addition, the materials of the conductive pillar 314, the first conductive layer 315 and / or the second conductive layer 316 may include copper or its alloy, or other high heat dissipation conductive materials, wherein the high heat dissipation conductive materials have a thermal conductivity higher than 100 W / m·K.

[0112] like Figure 5 As shown, the first thermally conductive component 320 includes a first thermally conductive layer 321 and a first conductive layer 322. The first conductive layer 322 is formed on the first thermally conductive layer 321. A first bonding layer 180 can bond the first thermally conductive layer 321 to the first cooling module 160. The aforementioned first electronic component 140 can be electrically connected to the first conductive layer 322 of the first thermally conductive component 320. The second thermally conductive component 330 includes a second thermally conductive layer 331 and a second conductive layer 332. The second conductive layer 332 is formed on the second thermally conductive layer 331. A second bonding layer 190 can bond the second thermally conductive layer 331 to the second cooling module 170. The aforementioned second electronic component 150 can be electrically connected to the second conductive layer 332 of the second thermally conductive component 330. The second bonding layer 190 can bond the second thermally conductive layer 331 to the second cooling module 170.

[0113] like Figure 5As shown, the first thermally conductive wall 380 connects the first outer surface 311s1 of the thermally conductive layer 311 of the cooling intermediate assembly 310 to the first cooling module 160, thereby conducting heat from the electronic components to the first cooling module 160. The second thermally conductive wall 390 connects the second outer surface 311s2 of the thermally conductive layer 311 of the cooling intermediate assembly 310 to the second cooling module 170, thereby conducting heat from the electronic components to the second cooling module 170. A bonding layer 395A is disposed between the first cooling module 160 and the first thermally conductive wall 380, and bonds the first cooling module 160 and the first thermally conductive wall 380 together. A bonding layer 395B is disposed between the first thermally conductive wall 380 and the first outer surface 311s1 of the thermally conductive layer 311 of the cooling intermediate assembly 310, and bonds the first thermally conductive wall 380 and the cooling intermediate assembly 310 together. A bonding layer 395C is disposed between the second cooling module 170 and the second thermally conductive wall 390, and bonds the second cooling module 170 and the second thermally conductive wall 390 together. A bonding layer 395D is disposed between the second heat-conducting wall 390 and the second outer surface 311s2 of the heat-conducting layer 311 of the cooling intermediary assembly 310, and bonds the second heat-conducting wall 390 and the cooling intermediary assembly 310. In one embodiment, bonding layers 395A, 395B, 395C and 395D are, for example, thermal interface materials.

[0114] The first thermally conductive wall 380 and / or the second thermally conductive wall 390 are, for example, made of a high thermal conductivity material. High thermal conductivity materials are, for example, high thermal conductivity (HTC) and low coefficient of thermal expansion (LCTE) materials, such as diamond, aluminum nitride, boron nitride, boron arsenide, silicon carbide, or suitable HTC and LCTE materials or combinations thereof, such as composite metals (e.g., copper / Invar / copper). In one embodiment, the first thermally conductive wall 380 and / or the second thermally conductive wall 390 are, for example, a diamond layer. The thermal conductivity (TC) of diamond can be as high as 2400 W / m·K.

[0115] Please refer to Figure 6 The diagram shows a cross-sectional view of a semiconductor device 400 according to another embodiment of the present invention. The semiconductor device 400 includes a cooling intermediate component 410, a first thermally conductive component 420, a second thermally conductive component 430, at least one electronic component 440, a first cooling module 460, a second cooling module 470, a first bonding layer 180, and a second bonding layer 190.

[0116] like Figure 6As shown, the cooling intermediate component 410 has opposing first sides 410s1 and second sides 410s2 and contains coolant L. The electronic component 440 is embedded within the cooling intermediate component 410. A first thermally conductive component 420 and a second thermally conductive component 430 are respectively disposed on the first side 410s1 and the second side 410s2. Thus, the heat generated by the electronic component 440 during operation can be conducted to the outside through the thermally conductive paths on opposite sides of the cooling intermediate component 410. In this embodiment, the electronic component 440 is, for example, a high-power semiconductor component or chip.

[0117] like Figure 6 As shown, the cooling intermediate assembly 410 includes an insulating layer 411, at least one first protrusion 112, at least one second protrusion 113, at least one conductive post 414, a first conductive layer 415, a second conductive layer 416, at least one through hole 417, at least one first conductive portion 418, and at least one second conductive portion 419.

[0118] like Figure 6 As shown, the insulating layer 411 has an inlet 411a, an outlet 411b, and a channel 411c, with the inlet 411a and outlet 411b communicating with the channel 411c. Coolant L is located within the channel 411c and can enter the channel 411c through the inlet 411a and exit the channel 411c through the outlet 411b. The structure of the channel 411c in this embodiment is similar to that of 111c described above, and will not be repeated here.

[0119] like Figure 6 As shown, channel 411c has opposing first inner surfaces 411c1 and second inner surfaces 411c2. A first protrusion 112 is connected to the first inner surface 411c1 of channel 411c and extends toward the second inner surface 411c2. The first protrusion 112 extends within channel 411c, increasing the contact area with the coolant L to increase cooling efficiency. Similarly, a second protrusion 113 is connected to the second inner surface 411c2 of channel 411c and extends toward the first inner surface 411c1. The second protrusion 113 extends within channel 411c, increasing the contact area with the coolant L to increase cooling efficiency. In one embodiment, the first protrusion 112 and the second protrusion 113 at least partially overlap along the thickness direction (e.g., the Z-axis) of the cooling intermediate assembly 410. In another embodiment, the first protrusion 112 and the second protrusion 113 may be offset along the X-axis.

[0120] In one embodiment, the insulating layer 411, the first protrusion 112, and the second protrusion 113 are, for example, integrally formed structures. In terms of materials, the insulating layer 411, the first protrusion 112, and the second protrusion 113 are, for example, made of insulating material.

[0121] like Figure 6As shown, the insulating layer 411 has opposing first outer surfaces 411s1 and second outer surfaces 411s2. Conductive pillars 414 may extend from the first outer surface 411s1 to the second outer surface 411s2. A first conductive layer 415 is formed on the first outer surface 411s1. The first conductive layer 415 is, for example, a patterned circuit layer, which may include at least one first line and / or a first pad, wherein the first pad can be connected to the electronic component 440. A second conductive layer 416 is formed on the second outer surface 411s2. The second conductive layer 416 is, for example, a patterned circuit layer, which may include at least one second line and / or a second pad, wherein the second pad can be connected to the electronic component 440. Furthermore, the materials of the conductive pillars 414, the first conductive layer 415, and / or the second conductive layer 416 may include copper or its alloys, or other high thermal conductivity materials, wherein the high thermal conductivity materials, for example, have a thermal conductivity greater than 100 W / m·K.

[0122] like Figure 6 As shown, the through-hole 417 of the cooling intermediate component 410 extends from the first outer surface 411s1 to the second outer surface 411s2. An electronic component 440 can be disposed within the through-hole 417. A first conductive portion 418 and a second conductive portion 419 are located within the through-hole 417, respectively located on opposite sides of the electronic component 440. The electronic component 440 can be electrically connected to the second conductive layer 416 through the first conductive portion 418, and can be electrically connected to the first conductive layer 415 through the second conductive portion 419.

[0123] like Figure 6 As shown, the first thermally conductive component 420 is, for example, a multi-layer structure. For instance, the first thermally conductive component 420 includes a first thermally conductive layer 421 and a first conductive layer 422, wherein the first conductive layer 422 can be disposed between the first thermally conductive layer 421 and the first cooling module 460. The second thermally conductive component 430 includes a second thermally conductive layer 431 and a second conductive layer 432, wherein the second conductive layer 432 can be disposed between the second thermally conductive layer 431 and the second cooling module 470. For example... Figure 6 As shown, the materials of the first thermally conductive layer 421 and / or the second thermally conductive layer 431 include, for example, aluminum oxide, nitrogen oxide, or other high heat dissipation and electrical conductivity materials, such as high thermal conductivity (HTC) and low coefficient of thermal expansion (LCTE) materials, such as diamond, aluminum nitride, boron nitride, boron arsenide, or silicon carbide.

[0124] The types of the first cooling module 460 and / or the second cooling module 470 may be similar to or the same as the aforementioned first cooling module 160 and / or second cooling module 170, and will not be described again here.

[0125] Please refer to Figure 7The diagram shows a cross-sectional view of a semiconductor device 500 according to another embodiment of the present invention. The semiconductor device 500 includes a cooling intermediate component 510, a first thermally conductive component 120, a second thermally conductive component 130, at least one first electronic component 140, at least one second electronic component 150, a first cooling module 460, a second cooling module 470, a first bonding layer 180, a second bonding layer 190, and a protective film 595.

[0126] Semiconductor device 500 includes the same or similar technical features as semiconductor device 100, with at least one difference in that the cooling intermediate component 510 of semiconductor device 500 has a different structure than the cooling intermediate component 110, and semiconductor device 500 further includes a protective film 595.

[0127] like Figure 7 As shown, the cooling intermediate assembly 510 has a first side 510s1 and a second side 510s2 opposite to each other. A first electronic component 140 is disposed between the first heat-conducting component 120 and the first side 510s1 of the cooling intermediate assembly 510. A second electronic component 150 is disposed between the second heat-conducting component 130 and the second side 510s2 of the cooling intermediate assembly 510. Thus, the heat generated by the first electronic component 140 and the second electronic component 150 during operation can be conducted to the outside through the heat conduction paths on opposite sides of the cooling intermediate assembly 510.

[0128] like Figure 7 As shown, the cooling intermediate assembly 510 includes an insulating layer 511, at least one conductive post 514, a first conductive layer 515, and a second conductive layer 516. The insulating layer 511 has opposing first outer surfaces 511s1 and second outer surfaces 511s2. The conductive post 514 may extend from the first outer surface 511s1 to the second outer surface 511s2. The first conductive layer 515 is formed on the first outer surface 511s1. The first conductive layer 515 is, for example, a patterned circuit layer, which may include at least one first line and / or a first pad, wherein the first pad may be connected to the first electronic component 140. The second conductive layer 516 is formed on the second outer surface 511s2. The second conductive layer 516 is, for example, a patterned circuit layer, which may include at least one second line and / or a second pad, wherein the second pad may be connected to the second electronic component 150. In addition, the materials of the conductive pillar 514, the first conductive layer 515 and / or the second conductive layer 516 may include copper or its alloys, or other high heat dissipation conductive materials, wherein the high heat dissipation conductive materials have, for example, a thermal conductivity higher than 100 W / m·K.

[0129] like Figure 7As shown, the protective film 595 can cover at least a portion of all exposed surfaces in the semiconductor device 500. The protective film 595 is, for example, a coating, specifically a dielectric coating. The protective film 595 can cover the cooling intermediate component 510, the first thermally conductive component 120, the second thermally conductive component 130, the first electronic component 140, and the second electronic component 150, effectively blocking these covered components from the immersion coolant. The material of the protective film 595 may include, for example, parylene. The protective film 595 can be referred to as a "conformal coating," which can cover all surfaces in the semiconductor device 500 that will come into contact with the coolant, achieving a complete barrier against the coolant.

[0130] Please refer to Figure 8 The diagram shows a cross-sectional view of a semiconductor device 600 according to another embodiment of the present invention. The semiconductor device 600 includes a cooling intermediate component 310, a first thermally conductive component 320, a second thermally conductive component 330, at least one first electronic component 140, at least one second electronic component 150, a first cooling module 460, a second cooling module 470, a first bonding layer 180, a second bonding layer 190, at least one first thermally conductive wall 380, at least one second thermally conductive wall 390, at least one bonding layer 395A, at least one bonding layer 395B, at least one bonding layer 395C, at least one bonding layer 395D, and a protective film 595.

[0131] Semiconductor device 600 includes the same or similar technical features as the aforementioned semiconductor device 300, with at least one difference: semiconductor device 600 further includes a protective film 595. The protective film 595 can cover the cooling intermediate component 310, the first thermally conductive component 320, the second thermally conductive component 330, the first electronic component 140, the second electronic component 150, the first bonding layer 180, the second bonding layer 190, the first thermally conductive wall 380, the second thermally conductive wall 390, bonding layers 395A, 395B, 395C, and 395D, and can block these covered components from the immersion coolant. The protective film 595 can cover all surfaces of the semiconductor device 600 that will come into contact with the coolant, to achieve a complete barrier against the coolant. Furthermore, the type of the first cooling module 460 can be the same as or similar to the aforementioned first cooling module 160, and the type of the second cooling module 470 can be the same as or similar to the aforementioned second cooling module 170, which will not be described further here.

[0132] Please refer to Figure 9The diagram shows a cross-sectional view of a semiconductor device 700 according to another embodiment of the present invention. The semiconductor device 700 includes a cooling intermediate component 710, a first thermally conductive component 420, a second thermally conductive component 430, at least one electronic component 440, a first cooling module 460, a second cooling module 470, a first bonding layer 180, a second bonding layer 190, and a protective film 595.

[0133] like Figure 9 As shown, the cooling intermediate assembly 710 has opposing first sides 710s1 and second sides 710s2. The electronic component 440 is embedded within the cooling intermediate assembly 710. A first heat-conducting component 420 and a second heat-conducting component 430 are respectively disposed on the first side 710s1 and the second side 710s2. Thus, the heat generated by the electronic component 440 during operation can be conducted to the outside through the heat conduction paths on opposite sides of the cooling intermediate assembly 710.

[0134] like Figure 9 As shown, the cooling intermediate assembly 710 includes an insulating layer 711, at least one conductive post 514, a first conductive layer 515, a second conductive layer 516, at least one through hole 417, at least one first conductive portion 418, and at least one second conductive portion 419.

[0135] like Figure 9 As shown, the insulating layer 711 has opposing first outer surfaces 711s1 and second outer surfaces 711s2. Conductive pillars 514 may extend from the first outer surface 711s1 to the second outer surface 711s2. A first conductive layer 515 is formed on the first outer surface 711s1. The first conductive layer 515 is, for example, a patterned circuit layer, which may include at least one first line and / or a first pad, wherein the first pad can be connected to the electronic component 440. A second conductive layer 516 is formed on the second outer surface 711s2. The second conductive layer 516 is, for example, a patterned circuit layer, which may include at least one second line and / or a second pad, wherein the second pad can be connected to the electronic component 440. Furthermore, the materials of the conductive pillars 514, the first conductive layer 515, and / or the second conductive layer 516 may include copper or its alloys.

[0136] like Figure 9 As shown, the through-hole 417 of the cooling intermediate component 710 extends from the first outer surface 711s1 to the second outer surface 711s2. An electronic component 440 may be disposed within the through-hole 417. The cooling intermediate component 710 further includes at least one first conductive portion 418 and at least one second conductive portion 419, located within the through-hole 417, and respectively located on opposite sides of the electronic component 440. The electronic component 440 may be electrically connected to the second conductive layer 516 through the first conductive portion 418, and the electronic component 440 may be electrically connected to the first conductive layer 515 through the second conductive portion 419.

[0137] In summary, although the present invention has been described and illustrated with reference to one or more embodiments, those skilled in the art can make equivalent changes and modifications after reading and understanding this specification and the accompanying drawings. Furthermore, while a particular feature of the present invention may only be disclosed in one of several embodiments, this feature may be combined with one or more other features of other embodiments as needed, and may be advantageous for any specific or particular application.

Claims

1. A semiconductor device, characterized by comprising: comprising: a cooling intermediary component having opposite first and second sides and containing a cooling liquid; a first thermally conductive component; a second thermally conductive component; a first electronic component disposed between the first thermally conductive component and the first side of the cooling intermediary component; and a second electronic component disposed between the second thermally conductive component and the second side of the cooling intermediary component. The cooling intermediary component comprises:

2. The semiconductor device according to claim 1, wherein an insulating layer having an inlet, an outlet, and a channel, the inlet and the outlet being in communication with the channel; and wherein the cooling liquid is located in the channel. The channel has opposite first and second inner surfaces; 3. The semiconductor device according to claim 2, wherein The cooling intermediary component further comprises: a first protrusion connected to the first inner surface of the channel and extending toward the second inner surface. The cooling intermediary component further comprises:

4. The semiconductor device according to claim 3, wherein a second protrusion connected to the second inner surface of the channel and extending toward the first inner surface. The cooling intermediary component comprises:

5. The semiconductor device according to claim 1, wherein an insulating layer having opposite first and second outer surfaces; an electrically conductive post extending from the first outer surface to the second outer surface; and an electrically conductive layer formed on the first outer surface or the second outer surface. further comprising:

6. The semiconductor device according to claim 1, wherein a cooling module; wherein the first thermally conductive component is located between the cooling module and the first electronic component. comprising:

7. A semiconductor device, characterized by comprising: a cooling intermediary component having opposite first and second sides; a first thermally conductive component; a second thermally conductive component; a first electronic component disposed between the first thermally conductive component and the first side of the cooling intermediary component; and a second electronic component disposed between the second thermally conductive component and the second side of the cooling intermediary component; wherein the cooling intermediary component comprises: a thermally conductive layer having opposite first and second outer surfaces; an electrically conductive post extending from the first outer surface to the second outer surface; and an electrically conductive layer formed on the first outer surface or the second outer surface. The thermally conductive layer is a diamond layer.

8. The semiconductor device according to claim 7, wherein further comprising:

9. The semiconductor device according to claim 7, wherein a cooling module, wherein the first thermally conductive component is located between the cooling module and the first electronic component; and a thermally conductive wall connecting the thermally conductive layer of the cooling intermediary component and the cooling module. comprising: a cooling intermediary component having opposite first and second sides and containing a cooling liquid; 10. A semiconductor device, characterized by comprising: a first thermally conductive component; a second thermally conductive component; and an electronic component embedded in the cooling intermediary component; wherein the first and second thermally conductive components are disposed on the first and second sides, respectively. The cooling intermediary component comprises: an insulating layer having opposite first and second outer surfaces; and a through-hole extending from the first outer surface to the second outer surface; 11. The semiconductor device according to claim 10, wherein wherein the electronic component is disposed in the through-hole. The cooling intermediary component further comprises: a first electrically conductive portion located in the through-hole; and a second electrically conductive portion located in the through-hole; 12. The semiconductor device according to claim 11, wherein wherein the first and second electrically conductive portions are located on opposite sides of the electronic component, respectively. The cooling intermediary component comprises: an insulating layer having an inlet, an outlet, and a channel, the inlet and the outlet being in communication with the channel; and wherein the cooling liquid is located in the channel.

13. The semiconductor device of Claim 10, wherein ​ ​ ​ 14. The semiconductor device according to claim 13, wherein The channel has a first inner surface and a second inner surface opposite to each other; The cooling intermediary component further includes: A first protrusion is connected to the first inner surface of the channel and extends toward the second inner surface.

15. The semiconductor device of claim 14, wherein The cooling intermediary component further includes: A second protrusion is connected to the second inner surface of the channel and extends toward the first inner surface.

16. The semiconductor device of claim 10, wherein The cooling intermediary component includes: An insulating layer having a first outer surface and a second outer surface opposite to each other; A conductive post extending from the first outer surface to the second outer surface; and A conductive layer is formed on the first outer surface or the second outer surface.

17. The semiconductor device of claim 10, wherein Including: A cooling module; The first heat-conducting component is located between the cooling module and the cooling intermediary component.

18. A semiconductor device, comprising: include: A cooling intermediate component having a first side and a second side opposite to each other; First heat-conducting component; A second heat-conducting component; A first electronic component is disposed between the first thermally conductive component and the first side of the cooling intermediate component; A second electronic component is disposed between the second thermally conductive component and the second side of the cooling intermediate component; as well as A protective film covers the cooling intermediate component, the first thermally conductive component, the second thermally conductive component, the first electronic component, and the second electronic component.

19. The semiconductor device of claim 18, wherein The cooling intermediary component includes: An insulating layer having a first outer surface and a second outer surface opposite to each other; A conductive post extending from the first outer surface to the second outer surface; and A conductive layer is formed on the first outer surface or the second outer surface.

20. The semiconductor device of claim 18, wherein The cooling intermediary component includes: A thermally conductive layer having a first outer surface and a second outer surface opposite to each other; A conductive post extending from the first outer surface to the second outer surface; and A conductive layer is formed on the first outer surface or the second outer surface.

21. The semiconductor device of claim 20, wherein The thermally conductive layer is a diamond layer.

22. The semiconductor device of claim 20, wherein Including: A cooling module, wherein the first thermally conductive component is located between the cooling module and the first electronic component; as well as A heat-conducting wall connects the heat-conducting layer of the cooling intermediary component to the cooling module.

23. A semiconductor device, comprising: include: A cooling intermediate component having a first side and a second side opposite to each other; First heat-conducting component; A second heat-conducting component; An electronic component is embedded within the cooling intermediary component; as well as A protective film covers the cooling intermediate component, the first thermally conductive component, and the second thermally conductive component; The first heat-conducting component and the second heat-conducting component are respectively disposed on the first side and the second side.

24. The semiconductor device of claim 23, wherein The cooling intermediary component includes: An insulating layer having a first outer surface and a second outer surface opposite to each other; and A through hole extends from the first outer surface to the second outer surface; The electronic component is disposed within the through hole.

25. The semiconductor device of claim 24, wherein The cooling intermediary component further includes: A first conductive portion is located within the through hole; and A second conductive part is located inside the through hole; The first conductive part and the second conductive part are located on opposite sides of the electronic component.

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