Semiconductor device and image sensor

Abstract

The utility model describes a semiconductor device, comprising a photosensitive device layer comprising a plurality of photosensitive elements arranged in a two-dimensional array; the color filter layer is arranged on one side of the photosensitive device layer, the color filter layer comprises multiple color filters which are periodically arranged and have different colors, and the multiple color filters and the multiple photosensitive elements are arranged in a one-to-one correspondence mode to form corresponding pixels; the multi-layer thin film optical layer is arranged between the photosensitive device layer and the color filter layer, the multi-layer thin film optical layer is provided with an optical structure formed by stacking multiple layers of thin films with different refractive indexes, and the optical structure is located below the color filters with at least two different colors so as to increase the number of pixel color channels. The utility model also describes an image sensor comprising the semiconductor device. According to the image sensor, the color filter layer and the multiple thin film optical layers are combined to serve as the optical regulation and control layer of the image sensor, more image color channels can be achieved, and the high spectral resolution is obtained.

Description

TECHNICAL FIELD

[0001] The utility model relates to the field of imaging, in particular to a kind of semiconductor device, the image sensor comprising the semiconductor device. BACKGROUND

[0002] Generally, CMOS semiconductor device uses red, green, blue three colors of organic color filter material to carry out light filtering, and then realizes the color restoration of image by the algorithm of rear end.However, this kind of only relying on three colors of image to restore object color has the problem that color gamut range is not enough big and is greatly influenced by illumination light source.Using more color channels of multispectral camera to realize higher spectral resolution is a feasible method to solve the above problems.The general multispectral camera has scanning type and snapshot type two schemes.Among them, the scheme of scanning type needs optical system to scan to separate spectral information, its volume is larger and imaging speed is slower, difficult to low-cost large-area popularization and application.The scheme of snapshot type does not need the scanning structure of optical system, has smaller volume and higher integration, has the potential of wide application.Pixel-level snapshot type multispectral scheme uses more color filter mode to increase the number of color channels to obtain higher spectral resolution, typical mode includes organic color filter material, multilayer thin film filter, super surface filter and the like structure. SUMMARY

[0003] Therefore, the utility model provides a kind of semiconductor device, it include: photosensitive device layer, including the multiple photosensitive elements of two-dimensional array arrangement;Color filter layer, it is set to the side of photosensitive device layer, color filter layer includes the multiple different colors of periodically arranged color filter, and multiple color filters are set to correspond with multiple photosensitive elements to form corresponding pixel;Multilayer thin film optical layer, it is set between photosensitive device layer and color filter layer, multilayer thin film optical layer has several optical structures by different refractive index multilayer thin film stack, any optical structure is located at least two different colors of color filter below, to increase the number of pixel color channels.

[0004] Optionally, the optical structure includes at least a first multilayer dielectric film and a second multilayer dielectric film, the first multilayer dielectric film and the second multilayer dielectric film have different thicknesses along a first direction, and the first direction is a direction from the photosensitive device layer to the color filter layer.

[0005] Optionally, the optical structure includes at least a first multilayer dielectric film and a second multilayer dielectric film, and the first multilayer dielectric film and the second multilayer dielectric film have different material layer stacking manners.

[0006] Optionally, the optical structure is composed of the lower reflector, the intermediate layer and the upper reflector in sequence along the first direction, the upper reflector and the lower reflector have the same periodic structure and material, and are both composed of a plurality of first optical film layers and a plurality of second optical film layers stacked alternately in sequence, wherein the refractive index of the first optical film layer is higher than that of the second optical film layer.

[0007] Optionally, the thickness of the intermediate layer of the first multilayer dielectric film is different from that of the intermediate layer of the second multilayer dielectric film.

[0008] Optionally, the material of the upper reflector or the lower reflector of the first multilayer dielectric film and the second multilayer dielectric film is different.

[0009] Optionally, the refractive index of the intermediate layer of the first multilayer dielectric film is different from that of the intermediate layer of the second multilayer dielectric film.

[0010] Optionally, the optical structure is composed of at least two optical film layers with different refractive indexes stacked non-periodically.

[0011] Optionally, the multilayer film optical layer further comprises a flat medium, and the flat medium covers the surface of the optical structure and the non-overlapping area between the filter layer and the multilayer film optical layer.

[0012] The utility model also provides a kind of image sensor, include above-mentioned semiconductor device.

[0013] Compared with prior art, the present application has at least the following advantages:

[0014] In the present application, a multilayer film optical layer is arranged between the photosensitive device layer and the color filter layer, so that the total transmittance of light is regulated by the combination of the color filter layer and the multilayer film optical layer. By designing the stacking mode, material and thickness of the thin film in the multilayer film optical layer, the transmission peak position can be regulated, and by selecting different filter materials, the absorption peaks of different pixels can be ensured to be different, achieving high spectral resolution. At the same time, since the material selected for the multilayer film optical layer usually has no absorption, and the absorption of the color filter layer can weaken the reflection on the surface of the semiconductor device, the problem of stray light related to the image can be alleviated, therefore, the combination of the color filter layer and the multilayer film optical layer as the optical regulation layer of the image sensor is beneficial to better realize more image color channels. BRIEF DESCRIPTION OF DRAWINGS

[0015] Figure 1 is a partial cross-sectional schematic view of a semiconductor device provided by an embodiment of the present application;

[0016] Figure 2 is a partial cross-sectional schematic view of another semiconductor device provided by an embodiment of the present application;

[0017] Figure 3 is a schematic diagram of a cross-sectional structure of an optical structure provided by an embodiment of the present application;

[0018] Figure 4 is a schematic diagram of a cross-sectional structure of another optical structure provided by an embodiment of the present application;

[0019] Figure 5 is a schematic diagram of a partial cross-section of yet another semiconductor device provided by an embodiment of the present application;

[0020] Figure 6 is a schematic diagram of a combination of a color filter layer and a multilayer thin film optical layer provided by an embodiment of the present application;

[0021] Figure 7 is a schematic diagram of another combination of a color filter layer and a multilayer thin film optical layer provided by an embodiment of the present application;

[0022] Figure 8 is a schematic diagram of a combination of a color filter layer and a multilayer thin film optical layer provided by an embodiment of the present application; Figure 7 is a schematic diagram of a partial cross-section of the combination of a color filter layer and a multilayer thin film optical layer shown along c-c’.

[0023] Element Number Explanation

[0024] 10 semiconductor device

[0025] 100 photosensitive device layer

[0026] 101 photosensitive element

[0027] 200 color filter layer

[0028] 202 color filter

[0029] 300 multilayer thin film optical layer

[0030] 400 microlens layer

[0031] 311 first multilayer dielectric thin film

[0032] 312 second multilayer dielectric thin film

[0033] 320 flat dielectric

[0034] 50 first optical film layer

[0035] 60 second optical film layer

[0036] 72 first aperiodic film layer

[0037] 74 second aperiodic film layer

[0038] 76 third aperiodic film layer

[0039] 78 fourth non-periodic film layer DETAILED DESCRIPTION

[0040] Those skilled in the art will readily obtain other advantages and purposes of the application from the disclosure of the application without affecting the spirit of the application. The application can also be implemented or applied in other different embodiments, and various modifications or changes can be made to the details based on different views and applications without departing from the spirit of the application.

[0041] As described in the embodiments of the application, the cross-sectional view of the device structure is partially enlarged without the general proportion for the convenience of description, and the schematic diagram is only an example, which should not limit the scope of protection of the application here. In addition, three-dimensional spatial dimensions including length, width and depth should be included in actual production.

[0042] For the convenience of description, spatial relationship words such as "under", "below", "lower", "under", "above", "upper" and the like can be used to describe the relationship of one element or feature with other elements or features shown in the drawings. It will be understood that these spatial relationship words are intended to include other directions of the device in use or operation in addition to the directions depicted in the drawings. In addition, when a layer is referred to as "between" two layers, it can be the only layer between the two layers, or one or more intervening layers can also be present.

[0043] In the context of the present application, the structure described as the first feature "on" the second feature can include an embodiment in which the first and second features are formed in direct contact, and can also include an embodiment in which another feature is formed between the first and second features, so that the first and second features can not be in direct contact.

[0044] It should be noted that the diagrams provided in the embodiments only schematically illustrate the basic concept of the application, and only the components related to the application are shown in the diagrams, not the number, shape and size of the components when actually implemented. The actual implementation of each component can be a random change, and the component layout pattern can be more complex.

[0045] In the prior art, the color filter layer is usually used to realize the color filter of the image sensor, but the method of relying only on three colors of images to restore the color of the object has the problems of insufficient color gamut range and being greatly affected by the illumination light source. Therefore, how to obtain more color channels to realize higher spectral resolution is a problem that needs to be solved urgently.

[0046] The application provides a solution to the above technical problems, mainly by combining the color filter layer and the multi-layer thin film optical layer, a series of possible solutions are proposed.

[0047] As shown in Figure 1 The present application provides a semiconductor device 10, which comprises:

[0048] a photosensitive device layer 100 comprising a plurality of photosensitive elements 101 arranged in a two-dimensional array;

[0049] It can be understood that the semiconductor device 10 comprises a plurality of photosensitive elements 101 arranged in a two-dimensional array of rows and columns in the photosensitive device layer 100. For the purpose of clarity, Figure 1 only four photosensitive elements 101 are shown in FIG. 1. In actual applications of the semiconductor device 10, the two-dimensional array can comprise thousands of rows and / or columns of photosensitive elements 101; similarly, in some embodiments, the two-dimensional array can have other arrangements other than rows and / or columns.

[0050] a color filter layer 200 disposed on one side of the photosensitive device layer 100, the color filter layer 200 comprising a plurality of color filters 202 of different colors arranged periodically, and the plurality of color filters 202 are arranged one-to-one with the plurality of photosensitive elements 101 to form corresponding pixels;

[0051] It can be understood that the color filters 202 can be made of optical resin, and by adjusting the proportion of the materials inside the optical resin, light of different wavelengths can pass through, thereby achieving the effect of color filtering. Generally speaking, the color filters 202 comprise three basic colors of red (R), green (G), and blue (B), and the most common arrangement of color filters is the Bayer array RGGB, i.e., each basic repeating unit has one R color, one B color, and two G color filters arranged. Of course, in other actual applications, there are also pixel array arrangement modes such as RGBW or Quad Bayer Coding (QBC).

[0052] a multilayer thin film optical layer 300 disposed between the photosensitive device layer 100 and the color filter layer 200, the multilayer thin film optical layer 300 having a plurality of optical structures stacked by a plurality of multilayer thin films of different refractive indices, any optical structure being located below at least two color filters 202 of different colors to increase the number of pixel color channels.

[0053] It can be understood that any optical structure is located below at least two different color filters 202, that is, in the direction of the photosensitive device layer to the filter layer, one optical structure overlaps at least two different color filters, in a popular way, one optical structure can be shared by multiple different color pixels, and in actual application, one optical structure is not limited to corresponding two different color pixels, but can also correspond to three different color pixels, or even more than three different color pixels; for example, one optical structure corresponds to a repeated unit of a Bayer array, that is, one optical structure corresponds to one R, one B, and two G filters. By sharing one optical structure, the number of color channels of multiple pixels can be increased, and the number of filters corresponding to one optical structure can be designed according to the required spectrum.

[0054] Optionally, the optical structure can be a periodic multilayer film, that is, the optical structure is formed by regularly stacking multilayer films, for example, a distributed Bragg reflector. When light passes through different media, it will be reflected at the interface. The optical characteristics such as reflection and transmission of light are related to the refractive index between media. Therefore, by periodically stacking thin films with different refractive indexes, when light passes through these thin films with different refractive indexes, the reflected light from each layer will constructively interfere due to the change of phase angle, and then combine together to obtain strong reflected light. Optionally, the optical structure can be a non-periodic multilayer film. The principle is similar to that of the distributed Bragg reflector. By non-periodically stacking thin films with different refractive indexes, when light passes through these thin films with different refractive indexes, the reflected light from each layer will constructively interfere due to the change of phase angle, and then combine together to obtain strong reflected light. Moreover, compared with the distributed Bragg reflector, the film layer stacking of the non-periodic multilayer film can obtain a corresponding stacking scheme according to the preset optical design. Therefore, the non-periodic multilayer film structure has greater freedom, further obtains a narrow-band high-quality factor transmission spectrum similar to the distributed Bragg reflector, and thus achieves higher spectral resolution.

[0055] Optionally, in some embodiments, continuing to refer to Figure 1 The semiconductor device 10 further includes a microlens layer 400 arranged on the side of the filter layer 200 away from the photosensitive device layer 100. The microlens layer includes a plurality of microlenses, Figure 1 Each microlens corresponds to one filter and one photosensitive element to form a pixel. In other embodiments, such as a four-Bayer array pixel arrangement, one microlens can cover two or four pixels. The purpose of making the microlens is to collect more light into the photosensitive element 101 of the photosensitive device layer 100 to improve the photosensitive sensitivity of the photosensitive element 101.

[0056] In the present application, a multi-layer thin film optical layer is arranged between the photosensitive device layer and the color filter layer, so that the total transmittance of light is regulated by the combination of the color filter layer and the multi-layer thin film optical layer. Moreover, by designing the stacking mode, material and thickness of the thin films in the multi-layer thin film optical layer, the transmission peak position can be regulated, and by selecting different color filter materials, the absorption peaks of different pixels can be ensured to be different, so as to realize high spectral resolution. At the same time, since the material selected for the multi-layer thin film optical layer usually has no absorption, and the absorption of the color filter layer can weaken the reflection of the surface of the semiconductor device and alleviate the problem of stray light related to the image, therefore, the combination of the color filter layer and the multi-layer thin film optical layer as the optical regulation layer of the image sensor is beneficial to better realize more image color channels.

[0057] As shown in the application embodiment shown in Figure 2 The optical structure at least includes a first multi-layer dielectric film 311 and a second multi-layer dielectric film 312, and the thicknesses of the first multi-layer dielectric film 311 and the second multi-layer dielectric film 312 along a first direction X are different, wherein the first direction X is a direction along which the photosensitive device layer 100 points to the color filter layer 200.

[0058] Optionally, as shown in Figure 3As shown, the optical structure is a distributed Bragg reflector, i.e., the optical structure is composed of a lower reflector, an intermediate layer and an upper reflector stacked in sequence along the first direction X, the upper reflector and the lower reflector have the same periodic structure and material, and are both formed by alternately stacking a plurality of first optical film layers 50 and a plurality of second optical film layers 60, wherein the refractive index of the first optical film layer 50 is higher than that of the second optical film layer 60. For example, the first optical film layer 50 can be made of silicon nitride (Si3N4) or titanium oxide (TiO2), and the second optical film layer 60 can be made of silicon dioxide (SiO2). It should be noted that the material of the first optical film layer 50 and the second optical film layer 60 can be set according to actual needs, as long as the refractive index of the first optical film layer 50 is higher than that of the second optical film layer 60, and the specific material is not limited herein. Further, the intermediate layer has at least one of the following differences from the first optical film layer 50 and the second optical film layer 60: refractive index, material, thickness, etc., so as to destroy the periodicity of the upper reflector and the lower reflector. Therefore, in the embodiment of the present application, the thicknesses of the first multilayer dielectric film 311 and the second multilayer dielectric film 312 along the first direction X are different, i.e., the thicknesses of the intermediate layers of the first multilayer dielectric film 311 and the second multilayer dielectric film 312 are different. Increasing the thickness of the intermediate layer can increase the transmission wavelength of the optical structure, and vice versa. Therefore, the first multilayer dielectric film 311 and the second multilayer dielectric film 312 have different transmission wavelengths due to the difference in the thickness of the intermediate layer, which changes the transmission peak position of the optical structure. Even if the first multilayer dielectric film 311 and the second multilayer dielectric film 312 are located below the same color filter, the absorption peaks of the corresponding pixels can be different, thereby realizing high spectral resolution.

[0059] In some other embodiments, the optical structure is formed by non-periodically stacking at least two optical film layers with different refractive indexes. It can be understood that the factors affecting the optical properties of the optical film, such as reflection and absorption, include but are not limited to the thickness and material of the film. When light passes through films with different thicknesses, the optical path and phase change are different, thereby affecting the interference effect and changing the optical properties. The refractive indexes of films made of different materials are significantly different. For example, the refractive index of silicon dioxide (SiO2) is about 1.46, the refractive index of silicon nitride (Si3N4) is about 2, and the refractive index of titanium oxide (TiO2) is about 2.5. Further, the optical properties of the optical film can be changed by adjusting the thickness and material of the optical film, i.e., the optical structure formed by non-periodically stacking at least two optical film layers with different refractive indexes can be realized by selecting optical film layers with the same material but different thicknesses, selecting optical film layers with different materials but the same thickness, and selecting optical film layers with different materials and thicknesses. For example, Figure 4In the shown application embodiment, the first multilayer dielectric film 311 and the second multilayer dielectric film 312 are both non-periodically stacked by the first non-periodic film 72, the second non-periodic film 74, the third non-periodic film 76 and the fourth non-periodic film 78, and the difference lies in that the thicknesses between the non-periodic films of the first multilayer dielectric film 311 and the second multilayer dielectric film 312 are different, so in this embodiment, the thicknesses of the first multilayer dielectric film 311 and the second multilayer dielectric film 312 along the first direction X are different, which means that the optical film layer thicknesses of the non-periodic stacks of the first multilayer dielectric film 311 and the second multilayer dielectric film 312 are different, while the materials of the optical film layers of the two can be completely the same or different. By adjusting the thickness of any optical film layer in the non-periodic stack, the transmission peak position of the optical structure can be changed due to the correlation between the thickness of the film and its optical properties, that is, the absorption peaks of different pixels can be ensured to be different, high spectral resolution is achieved, and the non-periodic multilayer film structure can obtain the thickness of each layer by various optimization algorithms, and the film layer can be smaller than the total thickness of the distributed Bragg reflector.

[0060] In Figure 5 In the shown application embodiment, the optical structure at least includes the first multilayer dielectric film 311 and the second multilayer dielectric film 312, and the material stacking modes of the first multilayer dielectric film 311 and the second multilayer dielectric film 312 are different.

[0061] In some embodiments, when the optical structure is a distributed Bragg reflector, the material stacking modes of the first multilayer dielectric film 311 and the second multilayer dielectric film 312 can mean that the material stacking modes of the upper reflector or the lower reflector between the first multilayer dielectric film 311 and the second multilayer dielectric film 312 are different, for example, the upper reflector or the lower reflector of the first multilayer dielectric film 311 is alternately stacked by high-reflectivity SI3N4 and low-reflectivity SIO2, and the upper reflector or the lower reflector of the second multilayer dielectric film 312 is alternately stacked by high-reflectivity TiO2 and low-reflectivity SIO2. The above example is only illustrative, and the upper reflector or the lower reflector of the first multilayer dielectric film 311 and the second multilayer dielectric film 312 can also be stacked by optical film layers of other materials, which is not limited here according to actual needs.

[0062] In other embodiments, when the optical structure is a distributed Bragg reflector, the material stacking modes of the first multilayer dielectric film 311 and the second multilayer dielectric film 312 can also mean that the refractive indexes of the intermediate layers of the first multilayer dielectric film 311 and the second multilayer dielectric film 312 are different, that is, the materials of the intermediate layers selected by the first multilayer dielectric film 311 and the second multilayer dielectric film 312 are different.

[0063] In some embodiments, when the optical structure is a non-periodic stack of at least two optical film layers with different refractive indices, the material layering manner of the first multilayer dielectric film 311 and the second multilayer dielectric film 312 can be different, which can mean that the first multilayer dielectric film 311 and the second multilayer dielectric film 312 have the same optical film layer structure, but the stacking order of the optical film layer structure or the thickness of the optical film layer is different.

[0064] In some embodiments, when the optical structure is a non-periodic stack of at least two optical film layers with different refractive indices, the material layering manner of the first multilayer dielectric film 311 and the second multilayer dielectric film 312 can be different, which can mean that the first multilayer dielectric film 311 and the second multilayer dielectric film 312 have different optical film layer structures, and the stacking order of the plurality of optical film layers therebetween can be different or the same.

[0065] Therefore, in the embodiments of the present application, the freedom of adjusting the material layering manner of the first multilayer dielectric film 311 and the second multilayer dielectric film 312 is very high, which can be adjusted according to the process conditions, so as to change the transmission peak position of different optical structures and ensure that the absorption peaks of different pixels are different, thereby realizing high spectral resolution.

[0066] The combination adjustment manner of the color filter layer and the multilayer film optical layer will be described below in combination with a pixel array. For example, Figure 6 , wherein the color filter layer of the pixel array is a Bayer array RGGB arrangement, and in Figure 6 , the first multilayer dielectric film 311 and the second multilayer dielectric film are respectively located below one Bayer array RGGB repeating unit. In the prior art Bayer array structure, the whole four filters of one RGGB constitute one light filtering unit, and only three colors can be used to restore the original color of the object photographed. In the embodiments of the present application, since the first multilayer dielectric film 311 overlaps with the four pixels of one Bayer array RGGB repeating unit, and the second multilayer dielectric film 312 overlaps with the four pixels of another Bayer array RGGB repeating unit, and the first multilayer dielectric film 311 and the second multilayer dielectric film 312 have different transmittances, six new color channels can be formed to restore the original color of the object photographed. Compared with the Bayer array of the single-layer color filter, the embodiments of the present application have higher spectral resolution and color restoration capability.

[0067] Further, in some embodiments, in combination with reference to Figure 7 and Figure 8The multilayer thin film optical layer 300 further comprises a planar medium 320, which covers the optical structure surface and the non-overlapping area between the filter layer 200 and the multilayer thin film optical layer 300 in the direction of the filter layer 200 pointing to the multilayer thin film optical layer 300. The filter layer of the pixel array is a Bayer array RGGB. Figure 7 In the embodiment, the filter of each of the R, G and B colors overlaps the first multilayer dielectric film 311, overlaps the second multilayer dielectric film 312 and does not overlap both the first multilayer dielectric film 311 and the second multilayer dielectric film 312, that is, the spectral part of the embodiment is regulated by the single-layer filter, and part of the spectral part is regulated by the combination of the filter layer and the multilayer thin film optical layer, so that six new color channels are additionally added to the original R, G and B color channels, the original color of the object captured can be restored through the nine color channels, and the spectral resolution and the color restoration capability are higher.

[0068] The application further provides an image sensor comprising the semiconductor device 10, wherein a multilayer thin film optical layer is arranged between the photosensitive device layer and the filter layer, so that the total transmittance of the light is regulated by the combination of the filter layer and the multilayer thin film optical layer. The transmittance peak position of the multilayer thin film optical layer is regulated by designing the stacking mode, material and thickness of the thin film in the multilayer thin film optical layer, and different filter materials are selected to ensure that the absorption peaks of different pixels are different, so that the spectral resolution is high. Since the material of the multilayer thin film optical layer usually has no absorption, and the absorption of the filter layer can weaken the reflection of the surface of the semiconductor device and relieve the problem of stray light related to the image, the combination of the filter layer and the multilayer thin film optical layer as the optical regulation layer of the image sensor is beneficial to better realize more color channels of the image.

[0069] The above is a further detailed description of the application in combination with the specific preferred embodiments, and the specific implementation of the application cannot be limited to these descriptions. For ordinary skilled persons in the technical field to which the application belongs, some simple deductions or replacements can be made without departing from the concept of the application, and all of them should be regarded as falling within the protection scope of the application.

Claims

1. A semiconductor device, characterized by, The semiconductor device comprises: a photosensitive device layer comprising a plurality of photosensitive elements arranged in a two-dimensional array; a color filter layer disposed on one side of the photosensitive device layer, the color filter layer comprising a plurality of color filters of different colors arranged periodically, and the plurality of color filters being arranged one-to-one with the plurality of photosensitive elements to form corresponding pixels; a multilayer thin film optical layer disposed between the photosensitive device layer and the color filter layer, the multilayer thin film optical layer having a plurality of optical structures stacked by multilayer thin films of different refractive indices, any of the optical structures being located below at least two color filters of different colors to increase the number of pixel color channels.

2. The semiconductor device of claim 1, wherein, The optical structure comprises at least a first multilayer dielectric film and a second multilayer dielectric film, the first multilayer dielectric film and the second multilayer dielectric film having different thicknesses in a first direction, the first direction being a direction from the photosensitive device layer to the color filter layer.

3. The semiconductor device of claim 1, wherein, The optical structure comprises at least a first multilayer dielectric film and a second multilayer dielectric film, the first multilayer dielectric film and the second multilayer dielectric film having different material stacking modes.

4. The semiconductor device according to claim 2 or 3, wherein The optical structure comprises a lower mirror, an intermediate layer, and an upper mirror stacked in a first direction, the first direction being a direction from the photosensitive device layer to the color filter layer. The upper mirror and the lower mirror have the same periodic structure and material, and are both stacked by a plurality of first optical film layers and a plurality of second optical film layers alternately, wherein the refractive index of the first optical film layer is higher than that of the second optical film layer.

5. The semiconductor device of claim 4, wherein, The intermediate layer of the first multilayer dielectric film and the intermediate layer of the second multilayer dielectric film have different thicknesses.

6. The semiconductor device of claim 4, wherein, The upper mirror or the lower mirror of the first multilayer dielectric film and the second multilayer dielectric film have different material stacking modes.

7. The semiconductor device of claim 4, wherein, The intermediate layer of the first multilayer dielectric film and the intermediate layer of the second multilayer dielectric film have different materials.

8. The semiconductor device according to claim 2 or 3, wherein The optical structure is stacked by at least two optical film layers of different refractive indices in a non-periodic manner.

9. The semiconductor device of claim 1, wherein, The multilayer thin film optical layer further comprises a flat dielectric, in a direction from the photosensitive device layer to the color filter layer, the color filter layer and the multilayer thin film optical layer have a non-overlapping area, and the flat dielectric covers the surface of the optical structure and the non-overlapping area.

10. An image sensor, comprising: The semiconductor device comprises any one of claims 1-9.

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